JP3535317B2 - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JP3535317B2 JP3535317B2 JP25142296A JP25142296A JP3535317B2 JP 3535317 B2 JP3535317 B2 JP 3535317B2 JP 25142296 A JP25142296 A JP 25142296A JP 25142296 A JP25142296 A JP 25142296A JP 3535317 B2 JP3535317 B2 JP 3535317B2
- Authority
- JP
- Japan
- Prior art keywords
- wiring
- film
- metal
- wiring film
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Wire Bonding (AREA)
Description
【０００１】[0001]
【発明の属する技術分野】この発明は、半導体素子を収
納する容器、特に半導体素子上の電極から容器外部に達
する電極の引出し方式に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a container for accommodating a semiconductor element, and more particularly to a method for extracting an electrode from an electrode on the semiconductor element to the outside of the container.
【０００２】[0002]
【従来の技術】図２１は、従来のこの種の半導体装置を
示す断面図で、１は半導体素子、２は半導体素子１上に
形成された電極、３は半導体素子１が載置される配線基
板、４は配線基板３を構成する絶縁基板、５は絶縁基板
４上に形成された金属配線、６は配線基板３の半導体素
子１を載置した面の金属配線５と、その反対面に形成さ
れた金属配線５との導通をとるためのスルーホールで、
絶縁基板４と金属配線５と共に配線基板３を構成する。
７は電極２と金属配線５とを結線するボンディングワイ
ヤ、８ははんだボールで、配線基板３の半導体素子１搭
載面と反対面に形成された金属配線５の所定位置に配置
され接合されている。９ははんだボール８載置面の金属
配線５上に形成されたソルダーレジスト、１０は半導体
素子１とボンディングワイヤ７とを取り囲むように形成
された封止樹脂である。このように構成された半導体装
置は、封止樹脂１０によって環境から保護されるととも
に、はんだボール８を溶融し他の電子機器などを搭載し
たボードに接合することで、外部よりはんだボール８に
電気的に接続することにより、半導体素子１上の電極２
までの接続が達成され、所定の機能を達成する。2. Description of the Related Art FIG. 21 is a cross-sectional view showing a conventional semiconductor device of this type, wherein 1 is a semiconductor element, 2 is an electrode formed on the semiconductor element 1, and 3 is a wiring on which the semiconductor element 1 is mounted. Substrate 4, insulating substrate constituting wiring substrate 3, 5 metal wiring formed on insulating substrate 4, 6 metal wiring 5 on the surface of wiring substrate 3 on which semiconductor element 1 is mounted, and on the opposite surface It is a through hole for conducting with the formed metal wiring 5,
The insulating substrate 4 and the metal wiring 5 constitute the wiring substrate 3.
Reference numeral 7 is a bonding wire for connecting the electrode 2 and the metal wiring 5, and 8 is a solder ball, which is arranged and joined at a predetermined position of the metal wiring 5 formed on the surface of the wiring board 3 opposite to the surface on which the semiconductor element 1 is mounted. . Reference numeral 9 is a solder resist formed on the metal wiring 5 on the mounting surface of the solder ball 8, and 10 is a sealing resin formed so as to surround the semiconductor element 1 and the bonding wire 7. The semiconductor device configured as described above is protected from the environment by the sealing resin 10, and the solder balls 8 are electrically connected to the solder balls 8 from the outside by melting the solder balls 8 and joining them to a board on which other electronic devices are mounted. Electrode 2 on the semiconductor element 1 by electrically connecting
Up to the connection is achieved and the desired function is achieved.
【０００３】[0003]
【発明が解決しようとする課題】従来の半導体装置は、
以上のように配線基板３の両面の電気的接続を図るため
に、２層以上の金属配線パターンとこれらを接続するス
ルーホール６を形成しなければならず、基板を製造する
上でコストの増加を招くとともに、スルーホールを機械
加工で穴を開けて形成することから、径の微細化に限界
があり、スルーホール間隔が詰められず、パッケージの
小型化や電極数の増加を行うのに限界があった。The conventional semiconductor device is
In order to electrically connect both sides of the wiring board 3 as described above, it is necessary to form two or more layers of metal wiring patterns and the through holes 6 for connecting them, which increases the cost in manufacturing the board. In addition, since the through holes are formed by machining the holes, there is a limit to the miniaturization of the diameter, the through hole interval cannot be filled, and it is not possible to reduce the package size and increase the number of electrodes. was there.
【０００４】この発明は上記のような課題を解決するた
めになされたもので、配線層を１層のみで構成し、スル
ーホールを用いない半導体装置を得ることを第一の目的
としている。また、小型化でき、電極数の多い半導体装
置を得ることを第二の目的としている。 The present invention has been made in order to solve the above problems, and a first object thereof is to obtain a semiconductor device in which a wiring layer is composed of only one layer and no through hole is used. A second object is to obtain a semiconductor device which can be miniaturized and has a large number of electrodes .
【０００５】[0005]
【課題を解決するための手段】この発明に係わる半導体
装置においては、絶縁体フィルムとこの絶縁体フィルム
上に形成され、複数の金属配線を有する配線フィルム、
この配線フィルム上に載置され、配線フィルムの金属配
線の一端にそれぞれ接続されている複数の電極を一面に
形成した半導体素子、及び配線フィルムの半導体素子の
載置面と反対側に配置された板材を備え、配線フィルム
は金属配線を外側にして金属配線の他端が半導体素子の
載置面と反対側に配置されるよう板材を介して折曲げら
れていると共に、絶縁フィルムの折曲げ部分には、絶縁
フィルムの厚みと板材の厚みの合計よりも大きい幅のス
リットが設けられているものである。また、絶縁体フィ
ルムとこの絶縁体フィルム上に形成され、複数の金属配
線を有する配線フィルム、この配線フィルム上に載置さ
れ、配線フィルムの金属配線の一端にそれぞれ接続され
ている複数の電極を一面に形成した半導体素子、及び配
線フィルムの半導体素子の載置面と反対側に配置される
と共に、金属部材または金属部材と絶縁部材とにより構
成された板材を備え、配線フィルムは金属配線を外側に
して金属配線の他端が半導体素子の載置面と反対側に配
置されるよう板材を介して折曲げられていると共に、折
曲げられた配線フィルムの角部に切欠きを設け、板材の
金属部材には切欠きに対応する部分に舌部を設け、この
舌部を介して金属部材を接地電位または電源電位に接続
したものである。また、絶縁体フィルムとこの絶縁体フ
ィルム上に形成され、複数の金属配線を有する配線フィ
ルム、この配線フィルム上に載置され、配線フィルムの
金属配線の一端にそれぞれ接続されている複数の電極を
一面に形成した半導体素子、及び配線フィルムの半導体
素子の載置面と反対側に配置されると共にスリットが設
けられた板材を備え、配線フィルムは金属配線を外側に
して金属配線の他端が半導体素子の載置面と反対側に配
置されるよう板材のスリットを通って折曲げられている
ものである。In a semiconductor device according to the present invention, an insulating film and a wiring film having a plurality of metal wirings formed on the insulating film,
A semiconductor element mounted on the wiring film and having a plurality of electrodes formed on one surface, each electrode being connected to one end of the metal wiring of the wiring film; and a semiconductor element of the wiring film.
The wiring film is provided with a plate material disposed on the opposite side to the mounting surface, and the wiring film is bent through the plate material so that the other end of the metal wiring is disposed on the opposite side to the mounting surface of the semiconductor element with the metal wiring outside. In addition, the bent part of the insulation film has insulation
A width greater than the sum of the film thickness and the board thickness
It has a lit. Also, an insulating film and a wiring film formed on the insulating film and having a plurality of metal wirings, a plurality of electrodes placed on the wiring film and connected to one end of the metal wirings of the wiring film, respectively. Semiconductor devices formed on one surface and
Located on the side of the wire film opposite to the mounting surface of the semiconductor element
Together with the metal member or the metal member and the insulating member.
The wiring film is bent through the plate so that the other end of the metal wiring is arranged on the side opposite to the mounting surface of the semiconductor element with the metal wiring on the outside, and the wiring film is folded.
Notches are provided at the corners of the bent wiring film,
A tongue is provided on the metal member at the part corresponding to the notch.
Connect metal members to ground or power potential via tongue
It was done. Also, an insulating film and a wiring film formed on the insulating film and having a plurality of metal wirings, a plurality of electrodes placed on the wiring film and connected to one end of the metal wirings of the wiring film, respectively. Semiconductor element formed on one surface and semiconductor of wiring film
It is placed on the side opposite to the mounting surface of the element and has a slit.
The wiring film is bent through the slit of the plate material so that the other end of the metal wiring is arranged on the side opposite to the mounting surface of the semiconductor element with the metal wiring outside. .
【０００６】さらに、絶縁体フィルムとこの絶縁体フィ
ルム上に形成され、複数の金属配線を有する配線フィル
ム、この配線フィルム上に載置され、配線フィルムの金
属配線の一端にそれぞれ接続されている複数の電極を一
面に形成した半導体素子を備え、配線フィルムは金属配
線を外側にして金属配線の他端が半導体素子の載置面と
反対側に配置されるよう折曲げられていると共に、半導
体素子は、電極面を配線フィルムの金属配線に対向させ
て載置され、半導体素子の電極面と反対側は、金属キャ
ップで覆われ、金属キャップは配線フィルムの折曲げ部
分の外側まで覆っているものである。また、窓が設けら
れた絶縁体フィルムとこの絶縁体フィルム上に形成さ
れ、複数の金属配線を有する配線フィルム、この配線フ
ィルムの窓に対応するように窪みが設けられた板材、及
び配線フィルムの窓及び板材の窪みの部分に載置され、
配線フィルムの金属配線の一端にそれぞれ接続されてい
る複数の電極を一面に形成した半導体素子を備え、配線
フィルムは金属配線を外側にして金属配線の他端が板材
の半導体素子の載置面と反対側に配置されるよう板材を
介して折曲げられているものである。また、配線フィル
ムの金属配線の他端には、はんだボールが設けられてい
るものである。Further, an insulating film and a wiring film formed on the insulating film and having a plurality of metal wirings, a plurality of wiring films placed on the wiring film and connected to one ends of the metal wirings of the wiring film, respectively. electrode comprising a semiconductor element formed on one surface of, the wiring film is folded so that the metal wires in the outer end of the metal wire is arranged on a side opposite to a mounting surface of the semiconductor element, semiconductor
The body element has the electrode surface facing the metal wiring of the wiring film.
Placed on the side opposite to the electrode surface of the semiconductor element.
The metal cap is a bent part of the wiring film.
It covers the outside of the minute. Also provided with a window
An insulator film and is formed on the insulator film on a wiring film having a plurality of metal wires, the wires off
A plate material provided with a depression corresponding to the window of the film, and
Placed on the window of the wiring film and the recess of the board,
The wiring film is equipped with a semiconductor element in which a plurality of electrodes connected to one end of the metal wiring are formed on one surface, and the wiring film has the metal wiring outside and the other end of the metal wiring is a plate material.
Place the plate material so that it is placed on the side opposite to the mounting surface of the semiconductor element.
It is bent through . Further, a solder ball is provided on the other end of the metal wiring of the wiring film.
【０００７】さらにまた、少なくとも半導体素子は、樹
脂で封止されているものである。また、配線フィルム
は、半導体素子の四辺に沿って折曲げられるものであ
る。また、配線フィルムを構成する絶縁体フィルムの折
曲げ部分には、スリットが設けられているものである。Furthermore, at least the semiconductor element is sealed with resin. Also, wiring film
Are those bent along the four sides of the semi-conductor elements. Further, a slit is provided in the bent portion of the insulating film that constitutes the wiring film.
【０００８】加えて、配線フィルムと折曲げられた配線
フィルムの間には板材が介在されているものである。ま
た、配線フィルムは、金属配線が設けられた面の反対側
に導体薄膜が形成されているものである。また、配線フ
ィルムの導体薄膜は、特定電位に接続されているもので
ある。また、板材は、金属部材または金属部材と絶縁部
材とにより構成され、金属部材は、接地電位または電源
電位に接続されているものである。In addition, a plate material is interposed between the wiring film and the bent wiring film. The wiring film has a conductor thin film formed on the side opposite to the surface on which the metal wiring is provided. The conductor thin film of the wiring film is connected to a specific potential. Further, the plate material is a metal member or a metal member and an insulating portion.
The metal member is a ground potential or a power source.
It is connected to the electric potential .
【０００９】[0009]
【発明の実施の形態】実施の形態１．
図１は、この発明の実施の形態１による半導体装置を示
す断面図である。図において、１、２は上記従来装置と
同一のものであり、その説明を省略する。１３は半導体
素子１を載置する配線フィルム、１４は配線フィルム１
３を支持する板材、１５は配線フィルム１３を構成する
柔軟性を有する絶縁体フィルム、１６は絶縁体フィルム
１５上に形成され、その一端を電極２に接合した金属配
線、１７は電極２に一端が接合された金属配線１６の他
端に接合されたはんだボール、１８は上記接合部を除
き、絶縁体フィルム１５と金属配線１６上に形成された
ソルダーレジストであり、絶縁体フィルム１５、金属配
線１６と共に配線フィルム１３を構成する。１９は半導
体素子１の周りと、配線フィルム１３の半導体素子載置
面とを覆う封止樹脂である。このように構成された半導
体装置にあっては、一体の配線フィルム１３を折曲げて
半導体素子載置面と反対側まで金属配線１６を配置した
ので、スルーホールを設けることなく反対側までの配線
を行うことができる。図２は、この発明の実施の形態１
による半導体装置を示す上面図である。図において、２
０は配線フィルム１３の折曲げ線である。図２は、配線
フィルム１３を、半導体素子１の四辺で折曲げている
が、半導体素子１の両側で折曲げることもでき、以下の
実施の形態においても同様である。BEST MODE FOR CARRYING OUT THE INVENTION Embodiment 1. 1 is a sectional view showing a semiconductor device according to a first embodiment of the present invention. In the figure, reference numerals 1 and 2 are the same as those of the above-mentioned conventional apparatus, and the description thereof is omitted. 13 is a wiring film on which the semiconductor element 1 is mounted, and 14 is a wiring film 1
A plate material that supports 3, reference numeral 15 is a flexible insulating film that forms the wiring film 13, 16 is metal wiring formed on the insulating film 15, and one end of the metal wiring is bonded to the electrode 2, and 17 is one end of the electrode 2. Solder balls bonded to the other end of the metal wiring 16 bonded to the metal wiring 16 are solder resists formed on the insulating film 15 and the metal wiring 16 except for the above-mentioned bonding portion. The wiring film 13 is formed together with 16. A sealing resin 19 covers the periphery of the semiconductor element 1 and the semiconductor element mounting surface of the wiring film 13. In the semiconductor device configured as described above, since the integrated wiring film 13 is bent and the metal wiring 16 is arranged up to the side opposite to the semiconductor element mounting surface, the wiring up to the opposite side is provided without providing a through hole. It can be performed. FIG. 2 shows the first embodiment of the present invention.
FIG. 3 is a top view showing the semiconductor device according to the present invention. In the figure, 2
Reference numeral 0 is a bent line of the wiring film 13. Although the wiring film 13 is bent on four sides of the semiconductor element 1 in FIG. 2, it may be bent on both sides of the semiconductor element 1, and the same applies to the following embodiments.
【００１０】実施の形態２．
図３は、実施の形態２による半導体装置の製造方法を示
す図である。図３（ａ）は、半導体素子１の電極２に配
線フィルム１３の金属配線１６の一端を接合する工程、
図３（ｂ）は、板材１４を配線フィルム１３の非配線面
の所定位置に接着などの方法で固定する工程、図３
（ｃ）は、板材１４を介在させて配線フィルム１３を板
材１４の反対側まで折り曲げ固定する工程、図３（ｄ）
は半導体素子１載置面側に樹脂封止１９を施す工程、図
３（ｅ）は樹脂封止１９面と反対側にはんだボール１７
を形成する工程を示している。これにより、実施の形態
１に示す半導体装置を製造することができる。Embodiment 2. FIG. 3 is a diagram showing a method of manufacturing a semiconductor device according to the second embodiment. FIG. 3A shows a step of joining one end of the metal wiring 16 of the wiring film 13 to the electrode 2 of the semiconductor element 1,
FIG. 3B shows a step of fixing the plate material 14 to a predetermined position on the non-wiring surface of the wiring film 13 by a method such as bonding.
3C is a step of bending and fixing the wiring film 13 to the opposite side of the plate member 14 with the plate member 14 interposed, FIG. 3D.
Is a step of performing resin sealing 19 on the mounting surface side of the semiconductor element 1, and FIG. 3 (e) shows solder balls 17 on the side opposite to the resin sealing 19 surface.
It shows a process of forming. Thus, the semiconductor device shown in the first embodiment can be manufactured.
【００１１】実施の形態３．
図４は、この発明の実施の形態３による半導体装置の製
造方法を示す断面図であり、実施の形態１をさらに改良
して、折り曲げ部分の絶縁体フィルム１５に折り曲げ方
向に沿ってスリット２３を設けた（図４（ａ））もので
ある。図４（ｂ）（ｃ）（ｄ）に示すように、板材１４
を介在させて、スリット２３により折り曲げが容易にな
ると共に、曲げ角度を小さくできることで、挟み込む板
材１４をより薄くできるため、半導体装置のより薄型化
（小型化）が可能となる。図５は、この発明の実施の形
態３による半導体装置を示す上面図である。図５に示す
とおり、スリット２３は、折曲げ線２０に沿って設けら
れる。スリット２３の両端の構造は、一例として、スリ
ット両端には絶縁体フィルム１５を残し、さらに板材１
４の角部に切り欠き２４を設けることで曲げをより容易
に行うことができる。また、折曲げ部分で絶縁体フィル
ム１５を完全に分離した（図５のスリット２３と切り欠
き２４を連結した構造）構造を取ることもできる。Embodiment 3. FIG. 4 is a cross-sectional view showing a method of manufacturing a semiconductor device according to a third embodiment of the present invention, which is a further improvement of the first embodiment, in which a slit 23 is formed along the bending direction in insulator film 15 at the bent portion. It is provided (FIG. 4A). As shown in FIGS. 4B, 4C, and 4D, the plate member 14
With the slit 23 interposed therebetween, bending can be facilitated and the bending angle can be made small, so that the sandwiching plate member 14 can be made thinner, so that the semiconductor device can be made thinner (smaller). FIG. 5 is a top view showing a semiconductor device according to the third embodiment of the present invention. As shown in FIG. 5, the slit 23 is provided along the bending line 20. As an example of the structure of both ends of the slit 23, the insulator film 15 is left at both ends of the slit, and the plate material 1
Bending can be performed more easily by providing the notches 24 at the corners of No. 4. Alternatively, the insulating film 15 may be completely separated at the bent portion (a structure in which the slit 23 and the notch 24 in FIG. 5 are connected).
【００１２】実施の形態４．
図６は、この発明の実施の形態４による半導体装置を示
す断面図である。実施の形態４においては、挟み込む板
材を金属板２５とし、金属配線１６のうち接地電位もし
くは電源電位になるものの一部を、接続部２６をもっ
て、この金属板２５に接続するものである。これにより
ノイズに強く高速な動作が可能な半導体装置となる。Fourth Embodiment 6 is a sectional view showing a semiconductor device according to a fourth embodiment of the present invention. In the fourth embodiment, the plate material to be sandwiched is the metal plate 25, and a part of the metal wiring 16 having the ground potential or the power supply potential is connected to the metal plate 25 with the connection portion 26. As a result, a semiconductor device resistant to noise and capable of high-speed operation is obtained.
【００１３】実施の形態５．
図７は、この発明の実施の形態５による半導体装置を示
す図で、図７（ａ）は断面図、図７（ｂ）は要部拡大図
である。実施の形態５は、実施の形態４の変形であり、
挟み込む板材として絶縁板２７の両面に互いに絶縁した
金属膜２８を形成したものを用い、この両面をそれぞれ
金属配線１６の電源電位、接地電位になるものと接続部
２６をもって接続するものである。これにより、さらに
電気的特性に優れた半導体装置となる。Embodiment 5. 7A and 7B are views showing a semiconductor device according to a fifth embodiment of the present invention. FIG. 7A is a sectional view and FIG. 7B is an enlarged view of a main part. The fifth embodiment is a modification of the fourth embodiment,
An insulating plate 27 having metal films 28 insulated from each other is used as a plate material to be sandwiched, and the both surfaces are connected to the power supply potential and the ground potential of the metal wiring 16 through the connecting portions 26, respectively. As a result, a semiconductor device having more excellent electrical characteristics is obtained.
【００１４】実施の形態６．
図８は、この発明の実施の形態６による半導体装置を示
す断面図であり、実施の形態１を変形したものである。
半導体素子１の回路形成面３０と配線フィルム１３の金
属配線１６を、電極２を介して互いに対向するように接
合（フェイスダウン接合）し、半導体素子１の回路形成
面３０と反対の面（裏面）が上方になるようにする。こ
の半導体素子１の裏面に金属性のキャップ３１を取り付
け、このキャップ３１と配線フィルム１３の間の空間を
封止樹脂１９で充填する。これにより、放熱性と電気的
特性がさらに改善する。Sixth Embodiment 8 is a sectional view showing a semiconductor device according to a sixth embodiment of the present invention, which is a modification of the first embodiment.
The circuit forming surface 30 of the semiconductor element 1 and the metal wiring 16 of the wiring film 13 are joined so as to face each other via the electrode 2 (face-down joining), and the surface opposite to the circuit forming surface 30 of the semiconductor element 1 (back surface). ) Is at the top. A metallic cap 31 is attached to the back surface of the semiconductor element 1, and the space between the cap 31 and the wiring film 13 is filled with a sealing resin 19. This further improves heat dissipation and electrical characteristics.
【００１５】実施の形態７．
図９は、この発明の実施の形態７による半導体装置を示
す断面図であり、実施の形態６の変形である。実施の形
態７においては、取り付けるキャップ３１を板材１４の
側面まで覆うように形成し、折り曲げ部分の金属配線１
６を保護する構造を設けたものである。図９（ａ）は、
図８を改良したもの、図９（ｂ）は、図４（ｄ）にキャ
ップ３１を取付けると共に板材１４の側面まで覆ったも
のである。Embodiment 7. 9 is a sectional view showing a semiconductor device according to a seventh embodiment of the present invention, which is a modification of the sixth embodiment. In the seventh embodiment, the cap 31 to be attached is formed so as to cover the side surface of the plate material 14, and the metal wiring 1 at the bent portion is formed.
A structure for protecting 6 is provided. FIG. 9A shows
FIG. 9 (b) is a modification of FIG. 8 in which the cap 31 is attached to FIG. 4 (d) and the side surface of the plate member 14 is covered.
【００１６】実施の形態８．
図１０は、この発明の実施の形態８による半導体装置を
示す断面図である。実施の形態８は、実施の形態７と同
一目的の変形例である。実施の形態８では、挟み込む板
材１４として、一回り大きいものを用い、これの周縁部
にスリット３２を設け、ここに配線フィルム１３を９０
度折り曲げて差込み（図１０（ａ））、さらに板材１４
の裏側まで折り曲げる（図１０（ｂ））。このとき板材
１４に設けられたスリット３２の外側部分は、折り曲げ
部分の側面周縁部に枠状に形成されることになり、これ
により折り曲げ部分の金属配線１６を保護する役割を果
たす。（図１０（ｃ））。Embodiment 8. 10 is a sectional view showing a semiconductor device according to an eighth embodiment of the present invention. The eighth embodiment is a modification having the same purpose as that of the seventh embodiment. In the eighth embodiment, as the sandwiched plate member 14, one having a slightly larger size is used, and the slit 32 is provided at the peripheral portion of the sandwiched plate member, and the wiring film 13 is provided therein.
Fold it once and insert it (Fig. 10 (a)).
Bend to the back side of the sheet (Fig. 10 (b)). At this time, the outer portion of the slit 32 provided in the plate member 14 is formed in a frame shape at the peripheral edge portion of the side surface of the bent portion, and thereby plays a role of protecting the metal wiring 16 of the bent portion. (FIG.10 (c)).
【００１７】実施の形態９．
図１１は、この発明の実施の形態９による半導体装置を
示す断面図である。実施の形態９は、実施の形態１の変
形であり、板材を介在させずに、直接絶縁体フィルム１
５の非配線面同士を直接接着したものである。機能的に
は、実施の形態１と変わることなく、より部品点数が少
なくなることで、更に低コスト化できると共に、薄型化
が可能となる。Ninth Embodiment 11 is a sectional view showing a semiconductor device according to a ninth embodiment of the present invention. The ninth embodiment is a modification of the first embodiment, in which the insulator film 1 is directly inserted without interposing a plate material.
The non-wiring surfaces of No. 5 are directly adhered to each other. Functionally, it is the same as that of the first embodiment, and the number of parts is reduced, so that the cost can be further reduced and the thickness can be reduced.
【００１８】実施の形態１０．
図１２は、この発明の実施の形態１０による半導体装置
を示す断面図である。実施の形態１０は、実施の形態９
を変形しており、絶縁体フィルム１５の非配線面に導体
薄膜３３を形成し（図１２（ａ））、絶縁体フィルム１
５を折り曲げる（図１２（ｂ））ことで、実施の形態４
と同様、電気的な性能を向上させることができる。図１
２（ｃ）は図１２（ｂ）の要部拡大図である。図１３
は、この発明の実施の形態１０による半導体装置を示す
上面図、図１４は、導体薄膜を示す断面図である。導体
薄膜３３は、実施の形態４と同様、接地電位または電源
電位に接続することができるほか、図１３、図１４に示
すごとく、折曲げた後の絶縁体フィルム１５の角となる
部分に切り欠きを設け、この部分に導体薄膜３３の舌部
３４を形成しておく。ボード搭載時に、この張出した舌
部３４を折曲げ、ボード上の特定電位を与えるランド部
３５に接続することで、電位を固定することができる。Embodiment 10. 12 is a sectional view showing a semiconductor device according to a tenth embodiment of the present invention. The tenth embodiment is the ninth embodiment.
Is deformed, and the conductor thin film 33 is formed on the non-wiring surface of the insulator film 15 (FIG. 12A).
Embodiment 4 is obtained by bending 5 (FIG. 12B).
Similarly, the electric performance can be improved. Figure 1
2 (c) is an enlarged view of a main part of FIG. 12 (b). FIG.
Is a top view showing a semiconductor device according to a tenth embodiment of the present invention, and FIG. 14 is a sectional view showing a conductor thin film. Like the fourth embodiment, the conductor thin film 33 can be connected to the ground potential or the power supply potential, and as shown in FIGS. 13 and 14, cut into the corner portions of the insulator film 15 after being bent. A notch is provided, and the tongue portion 34 of the conductor thin film 33 is formed in this portion. When the board is mounted, the protruding tongue portion 34 is bent and connected to the land portion 35 that gives a specific potential on the board, whereby the electric potential can be fixed.
【００１９】実施の形態１１．
図１５は、この発明の実施の形態１１による半導体装置
の製造方法を示す断面図である。実施の形態１１は、実
施の形態２の変形で、実施の形態２の製造方法を示す、
図３（ａ）の段階で、半導体素子１及び半導体素子搭載
部分の絶縁体フィルム１５の周囲を、封止樹脂１９でい
ったん覆った後、封止樹脂１９より露出した絶縁体フィ
ルム１５を、半導体素子１の搭載面と反対側に折り曲
げ、封止樹脂１９に接着などの方法で固定する製造方法
である。Eleventh Embodiment 15 is a sectional view showing a method of manufacturing a semiconductor device according to an eleventh embodiment of the present invention. The eleventh embodiment is a modification of the second embodiment and shows the manufacturing method of the second embodiment.
At the stage of FIG. 3A, the periphery of the semiconductor element 1 and the insulating film 15 in the semiconductor element mounting portion is once covered with the sealing resin 19, and then the insulating film 15 exposed from the sealing resin 19 is removed from the semiconductor film. This is a manufacturing method in which the element 1 is bent to the opposite side to the mounting surface and fixed to the sealing resin 19 by a method such as adhesion.
【００２０】実施の形態１２．
図１６は、この発明の実施の形態１２による半導体装置
を示す断面図である。実施の形態１２は、実施の形態１
１に示す半導体装置の製造方法によって得られた半導体
装置の構造を示している。Twelfth Embodiment 16 is a sectional view showing a semiconductor device according to a twelfth embodiment of the present invention. The twelfth embodiment is the first embodiment.
2 shows a structure of a semiconductor device obtained by the method for manufacturing a semiconductor device shown in FIG.
【００２１】実施の形態１３．
図１７は、この発明の実施の形態１３による半導体装置
を示す断面図である。実施の形態１３は、実施の形態１
２に加え、樹脂封止の際、半導体素子１の裏面を露出
し、露出した部分と半導体素子搭載面の封止樹脂１９の
表面に金属キャップ３１を貼り付けることで、実施の形
態６の放熱効果や実施の形態７の折曲部分保護効果を同
様に持たせることができる。Thirteenth Embodiment 17 is a sectional view showing a semiconductor device according to a thirteenth embodiment of the present invention. The thirteenth embodiment is the first embodiment.
In addition to 2, when the resin is sealed, the back surface of the semiconductor element 1 is exposed, and the metal cap 31 is attached to the exposed portion and the surface of the sealing resin 19 on the semiconductor element mounting surface, so that the heat dissipation of the sixth embodiment is achieved. The effect and the bent portion protection effect of the seventh embodiment can be similarly provided.
【００２２】実施の形態１４．
図１８は、この発明の実施の形態１４による半導体装置
を示す断面図である。実施の形態１４は、板材を用いな
い、実施の形態９の変形で、絶縁体フィルム１５とし
て、半導体素子１の外周よりひとまわり大きい窓、いわ
ゆるデバイスホールを設けたものを用い、絶縁体フィル
ム１５の窓内に突出するように、絶縁体フィルム１５上
の金属配線１６の一端を形成し、この金属配線１６の一
端と半導体素子１上の電極２を、窓を介して接続する。
即ち半導体素子１の電極形成面と絶縁フィルム１５上の
金属配線１６形成面が対向しない状態で、窓を介して、
電極２と金属配線１６の一端を接続し、配線フィルム１
３を半導体素子１の裏面に達するように折り曲げ、半導
体素子１の裏面に固定するものである。実施の形態１４
では、半導体装置を搭載する際の専有面積が、上述の実
施の形態中最小にでき、半導体素子１の電極２から、金
属配線１６の他の一端に接続されたはんだボール１７ま
での電送路を最短にできるため、電気的性能も向上する
特徴がある。Fourteenth Embodiment 18 is a sectional view showing a semiconductor device according to a fourteenth embodiment of the present invention. The fourteenth embodiment is a modification of the ninth embodiment, which does not use a plate material. As the insulator film 15, a window having a size slightly larger than the outer circumference of the semiconductor element 1, that is, a so-called device hole is used, and the insulator film 15 is used. One end of the metal wiring 16 on the insulator film 15 is formed so as to project into the window of 1., and one end of the metal wiring 16 and the electrode 2 on the semiconductor element 1 are connected through the window.
That is, with the electrode forming surface of the semiconductor element 1 and the metal wiring 16 forming surface on the insulating film 15 not facing each other, through the window,
The electrode 2 and one end of the metal wiring 16 are connected to each other, and the wiring film 1
3 is bent so as to reach the back surface of the semiconductor element 1 and fixed to the back surface of the semiconductor element 1. Embodiment 14
Then, the occupied area when mounting the semiconductor device can be minimized in the above-described embodiment, and the transmission path from the electrode 2 of the semiconductor element 1 to the solder ball 17 connected to the other end of the metal wiring 16 can be provided. Since it can be made as short as possible, it has the feature of improving electrical performance.
【００２３】実施の形態１５．
図１９は、この発明の実施の形態１５による半導体装置
を示す断面図である。実施の形態１５は、実施の形態１
４の変形で、半導体素子搭載側の制約あるいは半導体素
子裏面の領域のみでは電極数が足りない場合に有効な方
法で、半導体素子１の外周より一回り大きい窓を持った
枠状の板材３６を、配線フィルム１３の配線形成面の反
対側に固定し、この枠状の板材３６を介在させて配線フ
ィルム１３を折り曲げるもので、枠状の板材３６の部分
により、はんだボール１７配置領域を広げることができ
るものである。Fifteenth Embodiment 19 is a sectional view showing a semiconductor device according to a fifteenth embodiment of the present invention. The fifteenth embodiment is the same as the first embodiment.
In the modification of 4, a frame-shaped plate member 36 having a window slightly larger than the outer circumference of the semiconductor element 1 is formed by a method effective when the number of electrodes is insufficient only on the semiconductor element mounting side or the area of the semiconductor element back surface. The wiring film 13 is fixed on the side opposite to the wiring forming surface of the wiring film 13, and the wiring film 13 is bent with the frame-shaped plate member 36 interposed. The solder ball 17 placement area is expanded by the frame-shaped plate member 36. Is something that can be done.
【００２４】実施の形態１６．
図２０は、この発明の実施の形態１６による半導体装置
を示す断面図であり、実施の形態１５をさらに変形させ
たものである。実施の形態１６では、枠状の板材の代わ
りに、相当の領域をもつ窪み３７を形成した板材３８を
用い、実施の形態１５と同様に配線フィルム１３を窪み
３７形成面の裏側に達するように折曲げたものである。
実施の形態１６では、半導体素子１上の電極２と、絶縁
体フィルム１５上の金属配線１６との結線前に、半導体
素子１と配線フィルム１３を窪み付き板材３８によって
固定できるため、実施の形態１５のように、半導体素子
１上に突起状の電極を設ける必要が必ずしもなく、絶縁
体フィルムの窓より金属配線を突出させる必要が必ずし
もないため、半導体素子１上の電極２と金属配線１６の
接合は、いわゆるワイヤボンディングを用いることがで
きるのが特徴である。なお、この実施の形態１６の場合
でも、実施の形態１５のような半導体素子１上の突起電
極２と絶縁体フィルム１５の窓より突出した金属配線１
６とを接合する構造を採れることは明白である。Sixteenth Embodiment 20 is a sectional view showing a semiconductor device according to a sixteenth embodiment of the present invention, which is a further modification of the fifteenth embodiment. In the sixteenth embodiment, instead of the frame-shaped plate material, a plate material 38 in which a recess 37 having a considerable area is formed is used, and the wiring film 13 reaches the back side of the surface where the recess 37 is formed as in the fifteenth embodiment. It is a bent one.
In the sixteenth embodiment, since the semiconductor element 1 and the wiring film 13 can be fixed by the recessed plate member 38 before the connection between the electrode 2 on the semiconductor element 1 and the metal wiring 16 on the insulator film 15, the embodiment is possible. 15, it is not always necessary to provide a protruding electrode on the semiconductor element 1 and it is not always necessary to project the metal wiring from the window of the insulator film. The joining is characterized in that so-called wire bonding can be used. Even in the case of the sixteenth embodiment, the metal wiring 1 protruding from the window of the insulating film 15 and the protruding electrode 2 on the semiconductor element 1 as in the fifteenth embodiment.
It is obvious that a structure for joining 6 and 6 can be adopted.
【００２５】[0025]
【発明の効果】この発明は、以上説明したように構成さ
れているので、以下に示すような効果を奏する。絶縁体
フィルムとこの絶縁体フィルム上に形成され、複数の金
属配線を有する配線フィルム、この配線フィルム上に載
置され、配線フィルムの金属配線の一端にそれぞれ接続
されている複数の電極を一面に形成した半導体素子、及
び配線フィルムの半導体素子の載置面と反対側に配置さ
れた板材を備え、配線フィルムは金属配線を外側にして
金属配線の他端が半導体素子の載置面と反対側に配置さ
れるよう板材を介して折曲げられていると共に、絶縁フ
ィルムの折曲げ部分には、絶縁フィルムの厚みと板材の
厚みの合計よりも大きい幅のスリットが設けられている
ので、スリット部で配線フィルムを曲げやすく、半導体
素子搭載面から反対面に達する配線が形成され、スルー
ホールを形成する必要がなく、またスルーホールのため
の加工しろを大きくとる必要がないため、配線密度を高
めても小型化できると共に、スルーホールが必要無くな
ることで、安価に製造でき、端子数が多くなるほど顕著
になる。Since the present invention is constructed as described above, it has the following effects. An insulating film and a wiring film having a plurality of metal wirings formed on the insulating film, a plurality of electrodes placed on the wiring film and connected to one end of the metal wirings of the wiring film, respectively. Formed semiconductor element, and
And the wiring film on the opposite side of the semiconductor element mounting surface.
The wiring film is bent through the plate material such that the other end of the metal wiring is arranged on the side opposite to the mounting surface of the semiconductor element with the metal wiring outside and the insulating film is formed.
The thickness of the insulation film and the
Since a slit having a width larger than the total thickness is provided, it is easy to bend the wiring film at the slit portion, and wiring reaching from the semiconductor element mounting surface to the opposite surface is formed, and it is necessary to form a through hole. In addition, since it is not necessary to make a large processing allowance for the through hole, the size can be reduced even if the wiring density is increased, and since the through hole is not necessary, it can be manufactured at low cost and becomes more remarkable as the number of terminals increases. .
【００２６】また、絶縁体フィルムとこの絶縁体フィル
ム上に形成され、複数の金属配線を有する配線フィル
ム、この配線フィルム上に載置され、配線フィルムの金
属配線の一端にそれぞれ接続されている複数の電極を一
面に形成した半導体素子、及び配線フィルムの半導体素
子の載置面と反対側に配置されると共に、金属部材また
は金属部材と絶縁部材とにより構成された板材を備え、
配線フィルムは金属配線を外側にして金属配線の他端が
半導体素子の載置面と反対側に配置されるよう板材を介
して折曲げられていると共に、折曲げられた配線フィル
ムの角部に切欠きを設け、板材の金属部材には切欠きに
対応する部分に舌部を設け、この舌部を介して金属部材
を接地電位または電源電位に接続したので、半導体素子
搭載面から反対面に達する配線が形成され、スルーホー
ルを形成する必要がなく、またスルーホールのための加
工しろを大きくとる必要がないため、配線密度を高めて
も小型化できると共に、スルーホールが必要無くなるこ
とで、安価に製造でき、端子数が多くなるほど顕著にな
り、ノイズに強く、高速な動作が可能な半導体装置とす
ることができる。 Also, an insulating film and a wiring film formed on the insulating film and having a plurality of metal wirings, a plurality of wiring films placed on the wiring film and connected to one ends of the metal wirings of the wiring film, respectively. Element having the electrodes of one side formed on one surface and the semiconductor element of the wiring film
It is placed on the opposite side of the child's mounting surface and
Includes a plate member composed of a metal member and an insulating member,
The wiring film has a plate material so that the other end of the metal wiring is arranged on the side opposite to the mounting surface of the semiconductor element with the metal wiring on the outside.
And the wiring fill that is bent
Notches are provided in the corners of the aluminum
A tongue is provided on the corresponding part, and a metal member is inserted through this tongue.
Since it is connected to the ground potential or the power supply potential, the wiring reaching the opposite surface from the semiconductor element mounting surface is formed, it is not necessary to form a through hole, and it is not necessary to take a large processing margin for the through hole. Even if the wiring density is increased, the size can be reduced, and since the through hole is not required, it can be manufactured at low cost and becomes more remarkable as the number of terminals increases.
Therefore, the semiconductor device must be strong against noise and capable of high-speed operation.
You can
【００２７】また、絶縁体フィルムとこの絶縁体フィル
ム上に形成され、複数の金属配線を有する配線フィル
ム、この配線フィルム上に載置され、配線フィルムの金
属配線の一端にそれぞれ接続されている複数の電極を一
面に形成した半導体素子、及び配線フィルムの半導体素
子の載置面と反対側に配置されると共にスリットが設け
られた板材を備え、配線フィルムは金属配線を外側にし
て金属配線の他端が半導体素子の載置面と反対側に配置
されるよう板材のスリットを通って折曲げられているの
で、半導体素子搭載面から反対面に達する配線が形成さ
れ、スルーホールを形成する必要がなく、またスルーホ
ールのための加工しろを大きくとる必要がないため、配
線密度を高めても小型化できると共に、スルーホールが
必要無くなることで、安価に製造でき、端子数が多くな
るほど顕著になり、折曲げ部分の金属配線を保護するこ
とができる。 Further, an insulating film and a wiring film formed on the insulating film and having a plurality of metal wirings, a plurality of wiring films placed on the wiring film and connected to one ends of the metal wirings of the wiring film, respectively. Element having the electrodes of one side formed on one surface and the semiconductor element of the wiring film
It is placed on the opposite side of the child's mounting surface and has a slit
Since the wiring film is bent through the slit of the plate material so that the other end of the metal wiring is arranged on the side opposite to the mounting surface of the semiconductor element , the wiring film has the metal wiring on the outside. Wiring that reaches from the mounting surface to the opposite surface is formed, and there is no need to form through holes, and there is no need to make large processing allowances for through holes. Since it is not necessary, it can be manufactured at low cost, and it becomes more remarkable as the number of terminals increases, and it is possible to protect the metal wiring at the bent part.
You can
【００２８】さらに、絶縁体フィルムとこの絶縁体フィ
ルム上に形成され、複数の金属配線を有する配線フィル
ム、この配線フィルム上に載置され、配線フィルムの金
属配線の一端にそれぞれ接続されている複数の電極を一
面に形成した半導体素子を備え、配線フィルムは金属配
線を外側にして金属配線の他端が半導体素子の載置面と
反対側に配置されるよう折曲げられていると共に、半導
体素子は、電極面を配線フィルムの金属配線に対向させ
て載置され、半導体素子の電極面と反対側は、金属キャ
ップで覆われ、金属キャップは配線フィルムの折曲げ部
分の外側まで覆っているので、半導体素子搭載面から反
対面に達する配線が形成され、スルーホールを形成する
必要がなく、またスルーホールのための加工しろを大き
くとる必要がないため、配線密度を高めても小型化でき
ると共に、スルーホールが必要無くなることで、安価に
製造でき、端子数が多くなるほど顕著になり、しかも放
熱性と電気的特性が改善され、折曲げ部分の金属配線を
保護することができる。 Furthermore, an insulating film and a wiring film formed on the insulating film and having a plurality of metal wirings, a plurality of wiring films placed on the wiring film and connected to one ends of the metal wirings of the wiring film, respectively. electrode comprising a semiconductor element formed on one surface of, the wiring film is folded so that the metal wires in the outer end of the metal wire is arranged on a side opposite to a mounting surface of the semiconductor element, semiconductor
The body element has the electrode surface facing the metal wiring of the wiring film.
Placed on the side opposite to the electrode surface of the semiconductor element.
The metal cap is a bent part of the wiring film.
Since it covers up to the outside of the wiring, wiring that reaches from the semiconductor element mounting surface to the opposite surface is formed, there is no need to form through holes, and there is no need to make large processing allowances for through holes. The size can be reduced even if the number of terminals is increased, and the need for through-holes eliminates the need for low-cost manufacturing.
The thermal and electrical properties are improved, and the metal wiring in the bent part is
Can be protected.
【００２９】また、窓が設けられた絶縁体フィルムとこ
の絶縁体フィルム上に形成され、複数の金属配線を有す
る配線フィルム、この配線フィルムの窓に対応するよう
に窪みが設けられた板材、及び配線フィルムの窓及び板
材の窪みの部分に載置され、配線フィルムの金属配線の
一端にそれぞれ接続されている複数の電極を一面に形成
した半導体素子を備え、配線フィルムは金属配線を外側
にして金属配線の他端が板材の半導体素子の載置面と反
対側に配置されるよう板材を介して折曲げられているの
で、半導体素子搭載面から反対面に達する配線が形成さ
れ、スルーホールを形成する必要がなく、またスルーホ
ールのための加工しろを大きくとる必要がないため、配
線密度を高めても小型化できると共に、スルーホールが
必要無くなることで、安価に製造でき、端子数が多くな
るほど顕著になり、配線フィルムの窓に半導体素子を載
置することにより金属配線の電送路を短くすることがで
き、半導体素子の電極と配線フィルムの金属配線との結
線前に半導体素子を窪みに固定できるため、半導体素子
の電極と金属配線との接続にワイヤボンディングを用い
ることができる。 Further, an insulating film provided with a window , a wiring film formed on the insulating film and having a plurality of metal wirings, and a wiring film corresponding to the window.
Plate material with dents in it, and window and plate of wiring film
It is equipped with a semiconductor element that is placed in the recess of the material and has multiple electrodes formed on one surface that are connected to one end of the metal wiring of the wiring film, and the wiring film is the other end of the metal wiring with the metal wiring outside. Since it is bent through the plate so that it is arranged on the side opposite to the mounting surface of the semiconductor element of the plate, wiring that reaches from the semiconductor element mounting surface to the opposite surface is formed, and there is no need to form a through hole. Also, since it is not necessary to take a large processing allowance for the through hole, it can be downsized even if the wiring density is increased, and since the through hole is not necessary, it can be manufactured inexpensively, and becomes more remarkable as the number of terminals increases, Mounting semiconductor elements on the wiring film window
Can shorten the transmission path of the metal wiring.
The electrodes of the semiconductor element and the metal wiring of the wiring film.
Since the semiconductor element can be fixed in the recess before the line
Wire bonding is used to connect the electrodes to the metal wiring
You can
【００３０】また、配線フィルムは、半導体素子の四辺
に沿って折曲げられるので、外部端子を多く形成するこ
とができる。また、配線フィルムを構成する絶縁体フィ
ルムの折曲げ部分には、スリットが設けられているの
で、曲げ角度を小さくでき、半導体装置の小型化が可能
となる。また、配線フィルムは、金属配線が設けられた
面の反対側に導体薄膜が形成されているので、電気的な
性能を向上させることができる。また、配線フィルムの
導体薄膜は、特定電位に接続されているので、電気的な
性能を一層向上させることができる。また、板材は、金
属部材または金属部材と絶縁部材とにより構成され、金
属部材は、接地電位または電源電位に接続されているの
で、ノイズに強く、高速な動作が可能な半導体装置とす
ることができる。[0030] The wiring film, because it is bent along the four sides of the semi-conductor elements, it is a this <br/> forming many external terminals. Further, since the slit is provided in the bent portion of the insulating film forming the wiring film, the bending angle can be reduced, and the semiconductor device can be downsized. Further, since the conductor film is formed on the side of the wiring film opposite to the surface on which the metal wiring is provided, the electrical performance can be improved. Moreover, since the conductor thin film of the wiring film is connected to the specific potential, the electrical performance can be further improved. Further, the plate material is composed of a metal member or a metal member and an insulating member,
Since the metal member is connected to the ground potential or the power supply potential, it can be a semiconductor device that is resistant to noise and can operate at high speed.
【図１】 この発明の実施の形態１による半導体装置を
示す断面図である。FIG. 1 is a sectional view showing a semiconductor device according to a first embodiment of the present invention.
【図２】 この発明の実施の形態１による半導体装置を
示す上面図である。FIG. 2 is a top view showing the semiconductor device according to the first embodiment of the present invention.
【図３】 この発明の実施の形態２による半導体装置の
製造方法を示す断面図である。FIG. 3 is a sectional view showing the method for manufacturing the semiconductor device according to the second embodiment of the present invention.
【図４】 この発明の実施の形態３による半導体装置の
製造方法を示す断面図である。FIG. 4 is a sectional view showing a method for manufacturing a semiconductor device according to a third embodiment of the present invention.
【図５】 この発明の実施の形態３による半導体装置を
示す上面図である。FIG. 5 is a top view showing a semiconductor device according to a third embodiment of the present invention.
【図６】 この発明の実施の形態４による半導体装置を
示す断面図である。FIG. 6 is a sectional view showing a semiconductor device according to a fourth embodiment of the present invention.
【図７】 この発明の実施の形態５による半導体装置を
示す断面図である。FIG. 7 is a sectional view showing a semiconductor device according to a fifth embodiment of the present invention.
【図８】 この発明の実施の形態６による半導体装置を
示す断面図である。FIG. 8 is a sectional view showing a semiconductor device according to a sixth embodiment of the present invention.
【図９】 この発明の実施の形態７による半導体装置を
示す断面図である。FIG. 9 is a sectional view showing a semiconductor device according to a seventh embodiment of the present invention.
【図１０】 この発明の実施の形態８による半導体装置
を示す断面図である。FIG. 10 is a sectional view showing a semiconductor device according to an eighth embodiment of the present invention.
【図１１】 この発明の実施の形態９による半導体装置
を示す断面図である。FIG. 11 is a sectional view showing a semiconductor device according to a ninth embodiment of the present invention.
【図１２】 この発明の実施の形態１０による半導体装
置を示す断面図である。FIG. 12 is a sectional view showing a semiconductor device according to a tenth embodiment of the present invention.
【図１３】 この発明の実施の形態１０による半導体装
置を示す上面図である。FIG. 13 is a top view showing a semiconductor device according to a tenth embodiment of the present invention.
【図１４】 この発明の実施の形態１０による半導体装
置の導体薄膜を示す断面図である。FIG. 14 is a sectional view showing a conductor thin film of a semiconductor device according to a tenth embodiment of the present invention.
【図１５】 この発明の実施の形態１１による半導体装
置の製造方法を示す断面図である。FIG. 15 is a cross-sectional view showing the method of manufacturing the semiconductor device according to the eleventh embodiment of the present invention.
【図１６】 この発明の実施の形態１２による半導体装
置を示す断面図である。FIG. 16 is a sectional view showing a semiconductor device according to a twelfth embodiment of the present invention.
【図１７】 この発明の実施の形態１３による半導体装
置を示す断面図である。FIG. 17 is a sectional view showing a semiconductor device according to a thirteenth embodiment of the present invention.
【図１８】 この発明の実施の形態１４による半導体装
置を示す断面図である。FIG. 18 is a sectional view showing a semiconductor device according to a fourteenth embodiment of the present invention.
【図１９】 この発明の実施の形態１５による半導体装
置を示す断面図である。FIG. 19 is a sectional view showing a semiconductor device according to a fifteenth embodiment of the present invention.
【図２０】 この発明の実施の形態１６による半導体装
置を示す断面図である。FIG. 20 is a sectional view showing a semiconductor device according to a sixteenth embodiment of the present invention.
【図２１】 従来の半導体装置を示す断面図である。FIG. 21 is a sectional view showing a conventional semiconductor device.
１ 半導体素子、２ 電極、１３ 配線フィルム、１４
板材、１５ 絶縁体フィルム、１６ 金属配線、１７
はんだボール、１９ 封止樹脂、２５ 金属板、２８
金属膜、３１ キャップ、３３ 導体薄膜、３７ 窪
み。1 semiconductor element, 2 electrodes, 13 wiring film, 14
Plate material, 15 Insulator film, 16 Metal wiring, 17
Solder ball, 19 sealing resin, 25 metal plate, 28
Metal film, 31 cap, 33 conductor thin film, 37 depression.
フロントページの続き (72)発明者 橋本 知明 東京都千代田区丸の内二丁目２番３号 三菱電機株式会社内 (72)発明者 安永 雅敏 東京都千代田区丸の内二丁目２番３号 三菱電機株式会社内 (72)発明者 佐藤 民雄 兵庫県伊丹市瑞原四丁目１番地 菱電セ ミコンダクタシステムエンジニアリング 株式会社内 (56)参考文献 特開 平８−203959（ＪＰ，Ａ) 特開 平８−97312（ＪＰ，Ａ) 特開 平８−31868（ＪＰ，Ａ) 特開 平７−153793（ＪＰ，Ａ) 特開 平７−22464（ＪＰ，Ａ) 特開 平６−275675（ＪＰ，Ａ) 特開 平８−153826（ＪＰ，Ａ) 特開 平６−295935（ＪＰ，Ａ)Continued front page (72) Inventor Tomoaki Hashimoto 2-3 2-3 Marunouchi, Chiyoda-ku, Tokyo Within Mitsubishi Electric Corporation (72) Inventor Masatoshi Yasunaga 2-3 2-3 Marunouchi, Chiyoda-ku, Tokyo Within Mitsubishi Electric Corporation (72) Inventor Tamio Sato 4-1, Mizuhara, Itami City, Hyogo Prefecture Ryoden Center Semiconductor System Engineering Within the corporation (56) Reference JP-A-8-203959 (JP, A) JP-A-8-97312 (JP, A) JP-A-8-31868 (JP, A) Japanese Patent Laid-Open No. 7-153793 (JP, A) JP 7-22464 (JP, A) JP-A-6-275675 (JP, A) JP-A-8-153826 (JP, A) JP-A-6-295935 (JP, A)
Claims (13)
に形成され、複数の金属配線を有する配線フィルム、こ
の配線フィルム上に載置され、配線フィルムの金属配線
の一端にそれぞれ接続されている複数の電極を一面に形
成した半導体素子、及び上記配線フィルムの上記半導体
素子の載置面と反対側に配置された板材を備え、上記配
線フィルムは金属配線を外側にして金属配線の他端が半
導体素子の載置面と反対側に配置されるよう上記板材を
介して折曲げられていると共に、上記絶縁フィルムの折
曲げ部分には、上記絶縁フィルムの厚みと上記板材の厚
みの合計よりも大きい幅のスリットが設けられているこ
とを特徴とする半導体装置。1. An insulating film and a wiring film formed on the insulating film and having a plurality of metal wirings; a plurality of wiring films mounted on the wiring film and connected to one ends of the metal wirings of the wiring film, respectively. Element having the electrodes of one side formed on one surface, and the semiconductor of the above wiring film
With the placed plate on a side opposite to the mounting surface of the element, the plate member as the wiring film which was a metal wire outside the other end of the metal wire is arranged on a side opposite to a mounting surface of the semiconductor element
It is bent over and the insulation film is folded.
At the bent portion, the thickness of the insulating film and the thickness of the plate material
A semiconductor device characterized in that a slit having a width larger than the total of the slits is provided .
に形成され、複数の金属配線を有する配線フィルム、こ
の配線フィルム上に載置され、配線フィルムの金属配線
の一端にそれぞれ接続されている複数の電極を一面に形
成した半導体素子、及び上記配線フィルムの上記半導体
素子の載置面と反対側に配置されると共に、金属部材ま
たは金属部材と絶縁部材とにより構成された板材を備
え、上記配線フィルムは金属配線を外側にして金属配線
の他端が半導体素子の載置面と反対側に配置されるよう
上記板材を介して折曲げられていると共に、上記折曲げ
られた上記配線フィルムの角部に切欠きを設け、上記板
材の上記金属部材には上記切欠きに対応する部分に舌部
を設け、この舌部を介して上記金属部材を接地電位また
は電源電位に接続したことを特徴とする半導体装置。2. An insulating film, a wiring film formed on the insulating film and having a plurality of metal wirings, and a plurality of wiring films mounted on the wiring film and connected to one ends of the metal wirings of the wiring film, respectively. Element having the electrodes of one side formed on one surface, and the semiconductor of the above wiring film
It is placed on the side opposite to the mounting surface of the element,
Or a plate material composed of a metal member and an insulating member.
For example, as the wiring film which was a metal wire outside the other end of the metal wire is arranged on a side opposite to a mounting surface of the semiconductor element
It is bent through the plate material and the bending
Cutouts are provided at the corners of the wiring film
The metal member of the material has a tongue at the portion corresponding to the notch.
Is provided, and the metal member is grounded or grounded through this tongue.
Is a semiconductor device characterized by being connected to a power supply potential .
に形成され、複数の金属配線を有する配線フィルム、こ
の配線フィルム上に載置され、配線フィルムの金属配線
の一端にそれぞれ接続されている複数の電極を一面に形
成した半導体素子、及び上記配線フィルムの上記半導体
素子の載置面と反対側に配置されると共にスリットが設
けられた板材を備え、上記配線フィルムは金属配線を外
側にして金属配線の他端が半導体素子の載置面と反対側
に配置されるよう上記板材のスリットを通って折曲げら
れていることを特徴とする半導体装置。3. An insulating film, a wiring film formed on the insulating film and having a plurality of metal wirings, a plurality of wiring films mounted on the wiring film and connected to one ends of the metal wirings of the wiring film, respectively. Element having the electrodes of one side formed on one surface, and the semiconductor of the above wiring film
It is placed on the side opposite to the mounting surface of the element and has a slit.
And the wiring film is bent through the slit of the plate material so that the other end of the metal wiring is arranged on the side opposite to the mounting surface of the semiconductor element with the metal wiring outside. A semiconductor device characterized by:
に形成され、複数の金属配線を有する配線フィルム、こ
の配線フィルム上に載置され、配線フィルムの金属配線
の一端にそれぞれ接続されている複数の電極を一面に形
成した半導体素子を備え、上記配線フィルムは金属配線
を外側にして金属配線の他端が半導体素子の載置面と反
対側に配置されるよう折曲げられていると共に、上記半
導体素子は、電極面を上記配線フィルムの金属配線に対
向させて載置され、上記半導体素子の電極面と反対側
は、金属キャップで覆われ、上記金属キャップは上記配
線フィルムの折曲げ部分の外側まで覆っていることを特
徴とする半導体装置。4. An insulating film and a wiring film formed on the insulating film and having a plurality of metal wirings, a plurality of wiring films mounted on the wiring film and connected to one ends of the metal wirings of the wiring film, respectively. electrode comprising a semiconductor element formed on one surface and with the wiring film is folded so that the metal wires in the outer end of the metal wire is arranged on a side opposite to a mounting surface of the semiconductor element, the Half
The conductor element has an electrode surface facing the metal wiring of the wiring film.
Placed facing the opposite side of the semiconductor element from the electrode surface
Is covered with a metal cap, and the metal cap is
A semiconductor device characterized in that it covers the outside of the bent portion of the wire film .
縁体フィルム上に形成され、複数の金属配線を有する配
線フィルム、この配線フィルムの上記窓に対応するよう
に窪みが設けられた板材、及び上記配線フィルムの窓及
び上記板材の窪みの部分に載置され、上記配線フィルム
の金属配線の一端にそれぞれ接続されている複数の電極
を一面に形成した半導体素子を備え、上記配線フィルム
は金属配線を外側にして金属配線の他端が上記板材の半
導体素子の載置面と反対側に配置されるよう上記板材を
介して折曲げられていることを特徴とする半導体装置。5. An insulator film provided with a window , a wiring film formed on the insulator film and having a plurality of metal wirings, which corresponds to the window of the wiring film.
A plate material having a recess in the
And a semiconductor element that is placed in the recessed portion of the plate material and has a plurality of electrodes formed on one surface, each of which is connected to one end of the metal wiring of the wiring film. Mount the plate member so that the other end of the wiring is arranged on the side opposite to the mounting surface of the semiconductor element of the plate member.
A semiconductor device characterized by being bent through .
んだボールが設けられていることを特徴とする請求項１
〜請求項５のいずれか一項記載の半導体装置。6. The solder ball is provided on the other end of the metal wiring of the wiring film.
~ The semiconductor device according to claim 5 .
れていることを特徴とする請求項１〜請求項６のいずれ
か一項記載の半導体装置。7. The semiconductor device according to claim 1, wherein at least the semiconductor element is sealed with resin.
って折曲げられることを特徴とする請求項１〜請求項７
のいずれか一項記載の半導体装置。8. The wiring film according to claim 1 to claim 7, characterized in that it is bent along the four sides of the semi-conductor elements
The semiconductor device according to claim 1.
の折曲げ部分には、スリットが設けられていることを特
徴とする請求項２〜請求項５のいずれか一項記載の半導
体装置。9. The semiconductor device according to claim 2 , wherein a slit is provided in a bent portion of the insulating film forming the wiring film.
ルムの間には板材が介在されていることを特徴とする請
求項４記載の半導体装置。10. A contract , wherein a plate material is interposed between the wiring film and the bent wiring film.
The semiconductor device according to claim 4 .
た面の反対側に導体薄膜が形成されていることを特徴と
する請求項４記載の半導体装置。11. The semiconductor device according to claim 4 , wherein the wiring film has a conductive thin film formed on the side opposite to the surface on which the metal wiring is provided.
に接続されていることを特徴とする請求項１１記載の半
導体装置。12. The semiconductor device according to claim 11 , wherein the conductor thin film of the wiring film is connected to a specific potential.
と絶縁部材とにより構成され、上記金属部材は、接地電
位または電源電位に接続されていることを特徴とする請
求項１または請求項３または請求項１０記載の半導体装
置。13. The plate member is a metal member or a metal member.
And an insulating member.
請, characterized in that connected to the position or the power supply potential
The semiconductor device according to claim 1, claim 3, or claim 10 .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25142296A JP3535317B2 (en) | 1996-09-24 | 1996-09-24 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25142296A JP3535317B2 (en) | 1996-09-24 | 1996-09-24 | Semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH1098071A JPH1098071A (en) | 1998-04-14 |
| JP3535317B2 true JP3535317B2 (en) | 2004-06-07 |
Family
ID=17222621
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP25142296A Expired - Fee Related JP3535317B2 (en) | 1996-09-24 | 1996-09-24 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3535317B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3695893B2 (en) | 1996-12-03 | 2005-09-14 | 沖電気工業株式会社 | Semiconductor device, manufacturing method and mounting method thereof |
| KR100345075B1 (en) * | 1999-12-16 | 2002-07-20 | 주식회사 하이닉스반도체 | Chip size package |
-
1996
- 1996-09-24 JP JP25142296A patent/JP3535317B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH1098071A (en) | 1998-04-14 |
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