JP3528711B2 - Lead frame, resin-sealed semiconductor device using the same, and method of manufacturing the same - Google Patents

Lead frame, resin-sealed semiconductor device using the same, and method of manufacturing the same

Info

Publication number
JP3528711B2
JP3528711B2 JP30215799A JP30215799A JP3528711B2 JP 3528711 B2 JP3528711 B2 JP 3528711B2 JP 30215799 A JP30215799 A JP 30215799A JP 30215799 A JP30215799 A JP 30215799A JP 3528711 B2 JP3528711 B2 JP 3528711B2
Authority
JP
Japan
Prior art keywords
lead
semiconductor element
frame
heat dissipation
resin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP30215799A
Other languages
Japanese (ja)
Other versions
JP2001127234A (en
Inventor
幸雄 山口
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Corp
Panasonic Holdings Corp
Original Assignee
Panasonic Corp
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Corp, Matsushita Electric Industrial Co Ltd filed Critical Panasonic Corp
Priority to JP30215799A priority Critical patent/JP3528711B2/en
Publication of JP2001127234A publication Critical patent/JP2001127234A/en
Application granted granted Critical
Publication of JP3528711B2 publication Critical patent/JP3528711B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8338—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/83385—Shape, e.g. interlocking features
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92—Specific sequence of method steps
    • H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
    • H01L2224/9222—Sequential connecting processes
    • H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
    • H01L2224/92247—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01046—Palladium [Pd]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Abstract

PROBLEM TO BE SOLVED: To solve many problems concerning the size of semiconductor elements, pad positions, and connection construction for metal thin wires, in a construction for mounting a plurality of semiconductor elements on a resin- sealed semiconductor device. SOLUTION: This lead frame is composed of first supporting portions 5 arranged on a radiating member 2 for supporting a first semiconductor element, a plurality of lead portions 4 for signal connection, and hung lead portions having second supporting portions 6 for supporting a second semiconductor element. Since it is possible to mount a second semiconductor element larger than the first semiconductor element, and fill the space between the mounted semiconductor elements with sealing resin, by forming a QFP-type resin-sealed semiconductor device by the use of this lead frame, prevention entry of water into the vicinities of the semiconductor elements and enhancement of the moisture resisting property of the device as a resin-sealed semiconductor device become feasible.

Description

【発明の詳細な説明】Detailed Description of the Invention

【０００１】[0001]

【発明の属する技術分野】本発明は、複数の半導体素子
を効果的に支持することができる機能を有したリードフ
レームと、それを用いた樹脂封止型半導体装置およびそ
の製造方法に関するものであり、例えば、大きな半導体
素子を搭載可能でパワー素子からの発熱を放散するため
に放熱部下面を露出させた小型の樹脂封止型半導体装置
の改良に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a lead frame having a function of effectively supporting a plurality of semiconductor elements, a resin-sealed semiconductor device using the same, and a method of manufacturing the same. For example, the present invention relates to an improvement of a small-sized resin-sealed semiconductor device in which a large semiconductor element can be mounted and a lower surface of a heat radiating portion is exposed in order to dissipate heat generated from a power element.

【０００２】[0002]

【従来の技術】近年、電子機器の小型化に対応するため
に、電子機器に搭載される半導体部品を高密度に実装す
ることが要求され、それにともなって、半導体部品の小
型、薄型化が進み複数個の半導体素子を一つの半導体装
置に搭載する技術が進んでいる。2. Description of the Related Art In recent years, in order to cope with downsizing of electronic equipment, it is required to mount semiconductor parts mounted on the electronic equipment at a high density, and accordingly, semiconductor parts are becoming smaller and thinner. Technology for mounting a plurality of semiconductor elements in one semiconductor device is advancing.

【０００３】以下、従来のＱＦＰ型の樹脂封止型半導体
装置に用いるリードフレームについて、図面を参照しな
がら説明する。A lead frame used in a conventional QFP type resin-sealed semiconductor device will be described below with reference to the drawings.

【０００４】図１２は、従来のリードフレームの主要な
構成を示す図であり、図１２（ａ）は平面図であり、図
１２（ｂ）は図１２（ａ）におけるＡ−Ａ１箇所の断面
図である。FIG. 12 is a diagram showing the main structure of a conventional lead frame, FIG. 12 (a) is a plan view, and FIG. 12 (b) is a sectional view taken along the line AA1 in FIG. 12 (a). It is a figure.

【０００５】図１２に示すように、従来のリードフレー
ムは、銅（Ｃｕ）材よりなるフレーム枠１０１と、その
フレーム枠１０１内に、半導体素子が載置される矩形状
のダイパッド部１０２と、ダイパッド部１０２の角部を
その先端部で支持し、端部がフレーム枠１０１と接続し
た吊りリード部１０３と、半導体素子を載置した場合、
その載置した半導体素子と金属細線等の接続手段により
電気的に接続するビーム状の複数のリード部１０４とよ
り構成されている。そしてリード部１０４は、封止樹脂
で封止された際、封止樹脂部に埋設される部分はリード
部１０４ａを構成し、封止樹脂部より露出する部分はア
ウターリード部１０４ｂを構成するものであり、インナ
ーリード部１０４ａとアウターリード部１０４ｂとは、
一体で連続して設けられている。As shown in FIG. 12, the conventional lead frame includes a frame frame 101 made of a copper (Cu) material, a rectangular die pad portion 102 on which a semiconductor element is mounted, in the frame frame 101. When a corner portion of the die pad portion 102 is supported by its tip portion and a suspension lead portion 103 whose end portion is connected to the frame 101 and a semiconductor element are mounted,
It is composed of a plurality of beam-shaped lead portions 104 electrically connected to the mounted semiconductor element by a connecting means such as a metal thin wire. When the lead portion 104 is sealed with a sealing resin, the portion embedded in the sealing resin portion constitutes the lead portion 104a, and the portion exposed from the sealing resin portion constitutes the outer lead portion 104b. And the inner lead portion 104a and the outer lead portion 104b are
It is provided continuously as one unit.

【０００６】また、従来のリードフレームは、図１２
（ｂ）に示すように、ダイパッド部１０２は吊りリード
部１０３によって支持されているが、その吊りリード部
１０３に設けたディプレス部１０５（屈曲）によってダ
イパッド部１０２がリード部１０４上面よりも下方に配
置されるようダウンセットされているものである。この
構造は、半導体素子を搭載して樹脂封止型半導体装置を
構成した際、ダイパッド部１０２の下面を封止樹脂部の
底面に露出させるための構成である。なお、図示してい
ないが、従来のリードフレームの表面にはメッキが施さ
れているものである。The conventional lead frame is shown in FIG.
As shown in (b), the die pad portion 102 is supported by the suspension lead portion 103, but the die pad portion 102 is lower than the upper surface of the lead portion 104 due to the depressed portion 105 (bending) provided on the suspension lead portion 103. It is the one that is down-set so that it is placed in. This structure is for exposing the lower surface of the die pad portion 102 to the bottom surface of the sealing resin portion when a semiconductor element is mounted to form a resin-sealed semiconductor device. Although not shown, the surface of the conventional lead frame is plated.

【０００７】次に従来の樹脂封止型半導体装置およびそ
の製造方法について説明する。図１３〜図１７は、図１
２に示したリードフレームを用いた樹脂封止型半導体装
置の製造方法を示す拡大した断面図である。Next, a conventional resin-sealed semiconductor device and its manufacturing method will be described. 13 to 17 are shown in FIG.
FIG. 6 is an enlarged cross-sectional view showing a method of manufacturing a resin-sealed semiconductor device using the lead frame shown in FIG. 2.

【０００８】まず図１３に示すように、フレーム枠と、
そのフレーム枠内に、半導体素子が載置される矩形状で
あって、ダウンセットされたダイパッド部１０２と、ダ
イパッド部１０２の角部をその先端部で支持し、端部が
フレーム枠と接続した吊りリード部と、半導体素子を載
置した場合、その載置した半導体素子と金属細線等の接
続手段により電気的に接続するビーム状のリード部１０
４とを有したリードフレームを用意する。First, as shown in FIG. 13, a frame and
The semiconductor device is placed in a rectangular shape in the frame, and the down-set die pad portion 102 and the corner portion of the die pad portion 102 are supported by the tip portions thereof, and the end portions are connected to the frame frame. When the suspension lead portion and the semiconductor element are mounted, the beam-shaped lead portion 10 is electrically connected to the mounted semiconductor element by a connecting means such as a thin metal wire.
A lead frame having 4 and 4 is prepared.

【０００９】そして図１４に示すように、ダイパッド部
１０２上に半導体素子１０６として、第１の半導体素子
１０６ａを銀ペースト等の接着剤１０７により接着して
搭載する。そして第１の半導体素子１０６ａ上に第２の
半導体素子１０６ｂを銀ペースト等の接着剤１０７によ
り接着して積層搭載する。Then, as shown in FIG. 14, a first semiconductor element 106a is mounted as a semiconductor element 106 on the die pad portion 102 with an adhesive agent 107 such as silver paste. Then, the second semiconductor element 106b is laminated and mounted on the first semiconductor element 106a by adhering it with an adhesive 107 such as silver paste.

【００１０】次に図１５に示すように、ダイパッド部１
０２上に搭載された第１、第２の半導体素子１０６ａ，
１０６ｂの表面の電極パッド（図示せず）とリード部１
０４のインナーリード部１０４ａとを金属細線１０８に
よりそれぞれ電気的に接続する。Next, as shown in FIG. 15, the die pad portion 1
02 mounted on the first and second semiconductor elements 106a,
Electrode pad (not shown) on the surface of 106b and lead portion 1
The inner lead portion 104a of No. 04 is electrically connected to each other by the thin metal wire 108.

【００１１】次に図１６に示すように、半導体素子を搭
載、ワイヤー接続したリードフレームを封止金型内に載
置し、トランスファーモールドによってエポキシ系樹脂
よりなる封止樹脂１０９を注入し、リードフレームの外
囲としてダイパッド部１０２、半導体素子１０６ａ，１
０６ｂ、リード部１０４のインナーリード部１０４ａと
金属細線１０８の接続領域を封止する。ここではダイパ
ッド部１０２の下面が封止樹脂１０９の底面に露出する
ように封止する。Next, as shown in FIG. 16, a lead frame, on which a semiconductor element is mounted and connected by wires, is placed in a sealing mold, and a sealing resin 109 made of epoxy resin is injected by transfer molding to lead the leads. The die pad portion 102 and the semiconductor elements 106a and 1 are used as the outer circumference of the frame.
06b, the connection area between the inner lead portion 104a of the lead portion 104 and the thin metal wire 108 is sealed. Here, the die pad portion 102 is sealed so that the lower surface thereof is exposed to the bottom surface of the sealing resin 109.

【００１２】次に図１７に示すように、リード部１０４
の切断箇所に対して、金型による切断刃でリードカッ
ト、リードベンディングを行い、リード成形する。Next, as shown in FIG. 17, the lead portion 104
Lead cutting and lead bending are performed by using a cutting blade with a mold at the cutting point of, and lead molding is performed.

【００１３】そして図１８に示すようなリードフレーム
のダイパッド部１０２上に第１の半導体素子１０６ａが
接着剤１０７により搭載され、そして第１の半導体素子
１０６ａの上に接着剤１０７により第２の半導体素子１
０６ｂが搭載され、その半導体素子１０６ａ，１０６ｂ
とリード部１０４のインナーリード部１０４ａとが金属
細線１０８によりそれぞれ電気的に接続され、外囲が封
止樹脂１０９により封止され、そして封止樹脂１０９の
側面からはアウターリード部１０４ｂが露出した樹脂封
止型半導体装置であって、ダイパッド部１０２の下面が
封止樹脂１０９の底面から露出した構造の樹脂封止型半
導体装置（ＱＦＰ）を得る。Then, the first semiconductor element 106a is mounted on the die pad portion 102 of the lead frame as shown in FIG. 18 with the adhesive agent 107, and the second semiconductor element 106a is mounted on the first semiconductor element 106a with the adhesive agent 107. Element 1
06b is mounted on the semiconductor device 106a, 106b.
And the inner lead portion 104a of the lead portion 104 are electrically connected to each other by the fine metal wire 108, the outer circumference is sealed by the sealing resin 109, and the outer lead portion 104b is exposed from the side surface of the sealing resin 109. A resin-sealed semiconductor device (QFP) having a structure in which the lower surface of the die pad portion 102 is exposed from the bottom surface of the sealing resin 109 is obtained.

【００１４】[0014]

【発明が解決しようとする課題】しかしながら、前記従
来の樹脂封止型半導体装置においては、ダイパッド部の
下面を封止樹脂から露出させ、薄型化、放熱性は実現す
るものの、以下のような課題があった。However, in the conventional resin-encapsulated semiconductor device described above, although the lower surface of the die pad portion is exposed from the encapsulating resin to achieve thinning and heat dissipation, the following problems are encountered. was there.

【００１５】第１に、第１の半導体素子上に搭載する第
２の半導体素子は必ずその外径寸法が第１の半導体素子
より小さいという制約が必要であった。First, the second semiconductor element mounted on the first semiconductor element must have a constraint that its outer diameter dimension is smaller than that of the first semiconductor element.

【００１６】第２に、具体的には第１の半導体素子の電
極の金属細線による接続可能なキャピラリー等のエリヤ
を確保する分だけ余分に小さいことが要求される制限、
第１，第２の半導体素子の電極位置の金属細線接続上の
位置制限、および搭載位置のばらつきによる第１，第２
の半導体素子の電極を接続する金属細線同士のタッチに
よる不良、第２の半導体素子の接着剤の塗布はみ出しば
らつきによる電極への悪影響を及ぼさない寸法の確保に
よる制限が必要であった。Secondly, specifically, a limit that is required to be extra small for securing an area such as a capillary that can be connected by a fine metal wire of the electrode of the first semiconductor element,
The first and second semiconductor elements are restricted in their positions on the metal thin wire connection of the electrode positions and the first and second semiconductor elements due to variations in mounting positions.
However, it is necessary to limit the size of the semiconductor element by ensuring a dimension that does not adversely affect the electrodes due to a defect caused by touching of the thin metal wires connecting the electrodes of the semiconductor element and the uneven application of the adhesive on the second semiconductor element.

【００１７】第３に、寸法の小さな第２の半導体素子の
電極とインナーリード部との接続位置は第１の半導体素
子の金属細線の影響を受けない位置にするため、金属細
線の長さが長くなり、封止樹脂の注入によるいわゆるワ
イヤー流れによるタッチ不良が多くなる。このため第２
の半導体素子は小さな寸法の搭載制限が生じる。Thirdly, since the connection position between the electrode of the second semiconductor element having a small size and the inner lead portion is not affected by the metal thin wire of the first semiconductor element, the length of the metal thin wire is small. It becomes longer, and touch defects due to so-called wire flow due to injection of the sealing resin increase. Therefore, the second
The semiconductor device has a small mounting limitation.

【００１８】第４に、ダイパッド部上に搭載する第１の
半導体素子上に搭載する第２の半導体素子の接着剤の吸
水による耐パッケージクラック性の低下が顕著になる。Fourthly, the package crack resistance is remarkably lowered due to the water absorption of the adhesive of the second semiconductor element mounted on the first semiconductor element mounted on the die pad portion.

【００１９】第５に、図１８の断面図に示すように、ダ
イパッド部１０２はインナーリード先端位置より小型に
する制限がリードフレームの加工上あり、ダイパッド部
１０２に搭載する半導体素子１０６ａ、１０６ｂのサイ
ズの制約が生じ、大型素子の搭載ができず、大型素子を
搭載した小型パッケージの実現はできないという課題が
あった。Fifth, as shown in the cross-sectional view of FIG. 18, there is a restriction on the die pad portion 102 that it is smaller than the tip position of the inner lead due to the processing of the lead frame, and the semiconductor elements 106a and 106b mounted on the die pad portion 102 are restricted. There is a problem that size restrictions occur, large-sized elements cannot be mounted, and a small package in which large-sized elements are mounted cannot be realized.

【００２０】第６に、封止樹脂１０９の応力および実装
後の応力により半導体素子１０６ａ、１０６ｂが悪影響
を受けたり、封止樹脂１０９にクラックが発生するとい
う課題もあった。Sixthly, there is a problem that the semiconductor elements 106a and 106b are adversely affected by the stress of the sealing resin 109 and the stress after mounting, or the sealing resin 109 is cracked.

【００２１】第７に、ダイパッド部１０２の上面および
側面には、封止樹脂１０９が存在するものの、ダイパッ
ド部１０２の裏面側には、封止樹脂１０９が存在しな
い。そのために、半導体素子１０６ａ，１０６ｂの下面
を接着する接着剤１０７に水分が吸水し、実装時の高温
で気化膨張により、ダイパッド部１０２および半導体素
子１０６ａ、１０６ｂに対する封止樹脂の保持力が低下
して、信頼性が悪化するという課題（ポップコーンクラ
ック）があった。Seventh, although the sealing resin 109 is present on the upper surface and the side surfaces of the die pad portion 102, the sealing resin 109 is not present on the back surface side of the die pad portion 102. Therefore, moisture is absorbed by the adhesive 107 that adheres the lower surfaces of the semiconductor elements 106a and 106b, and the holding force of the sealing resin on the die pad portion 102 and the semiconductor elements 106a and 106b decreases due to vaporization and expansion at high temperature during mounting. Then, there was a problem that reliability deteriorated (popcorn crack).

【００２２】第８に、特に第１の半導体素子１０６ａを
接着剤１０７でダイパッド部１０２の上面に接続する
と、熱膨張率の差によって、ダイパッド部１０２が反り
を生じ樹脂封止時にダイパッド部１０２の裏面上に封止
樹脂の一部がはみ出し、いわゆる樹脂バリが発生すると
いう課題があった。Eighth, in particular, when the first semiconductor element 106a is connected to the upper surface of the die pad portion 102 with the adhesive 107, the die pad portion 102 warps due to the difference in the coefficient of thermal expansion, and the die pad portion 102 of the die pad portion 102 is sealed at the time of resin sealing. There has been a problem that a part of the sealing resin protrudes on the back surface to cause so-called resin burr.

【００２３】第９に、実装基板とダイパッド部との接合
において、ダイパッド部１０２の裏面上に封止樹脂の一
部がはみ出していわゆる樹脂バリが介在すると、実装基
板の接続部との接触が不十分となり、放熱特性などの所
望の特性を十分発揮できない恐れがある。一方、この樹
脂バリはウォータージェットなどの利用によって除去で
きるが、かかる処理は煩雑な手間を要し、しかも、ウォ
ータージェット工程によってリード表面のメッキ層が剥
がれ、また不純物が付着することから、樹脂封止工程後
に樹脂封止から露出している部分にメッキを施すことが
必要となり、作業能率の低下、信頼性の悪化を招く恐れ
もあった。Ninth, in the joining of the mounting board and the die pad portion, if a part of the sealing resin overflows on the back surface of the die pad portion 102 and a so-called resin burr intervenes, contact with the connecting portion of the mounting board is not possible. This is sufficient, and there is a possibility that desired characteristics such as heat dissipation characteristics cannot be fully exhibited. On the other hand, this resin burr can be removed by using a water jet, etc., but such a treatment requires complicated labor, and since the plating layer on the lead surface is peeled off by the water jet process and impurities are attached, the resin sealing is not performed. After the stopping step, it is necessary to plate the portion exposed from the resin encapsulation, which may cause a decrease in work efficiency and a deterioration in reliability.

【００２４】本発明は、以上の諸点に鑑みなされたもの
であって、その代表的な目的は下記の通りである。The present invention has been made in view of the above points, and its typical purpose is as follows.

【００２５】本発明の第１の目的は、複数の素子を搭載
するパッケージにおいて、第１の半導体素子を搭載する
搭載部材と第２の半導体素子を搭載する搭載部材とを分
離することにより、第２の半導体素子の搭載制限を大幅
に緩和して大きな半導体素子の搭載を可能にし、半導体
素子の搭載自由度の高い樹脂封止型半導体装置およびそ
の製造方法を提供することにある。A first object of the present invention is to separate a mounting member for mounting a first semiconductor element and a mounting member for mounting a second semiconductor element from each other in a package mounting a plurality of elements. (2) It is an object of the present invention to provide a resin-sealed semiconductor device having a high degree of freedom in mounting a semiconductor element and a method for manufacturing the same, by significantly relaxing the mounting restrictions of the second semiconductor element and enabling mounting of a large semiconductor element.

【００２６】本発明の第２の目的は、第１の半導体素子
を搭載する搭載部材と第２の半導体素子を搭載する搭載
部材とを分離することにより、第１の半導体素子の主面
と第２の半導体素子の底面とに封止樹脂の充填を可能に
して、信頼性の高い樹脂封止型半導体装置およびその製
造に適したリードフレームを提供することにある。A second object of the present invention is to separate the mounting member on which the first semiconductor element is mounted from the mounting member on which the second semiconductor element is mounted so as to separate the main surface of the first semiconductor element from the mounting surface. A second object is to provide a highly reliable resin-sealed semiconductor device and a lead frame suitable for manufacturing the same, by allowing the bottom surface of the second semiconductor element to be filled with the sealing resin.

【００２７】本発明の第３の目的は、第１の半導体素子
を搭載する搭載部材と第２の半導体素子を搭載する搭載
部材とを分離し、第１の搭載部材（放熱部材）の下面を
封止樹脂から露出させた場合における樹脂バリの発生を
防止することにより、放熱特性のよい樹脂封止型半導体
装置およびその製造方法を提供することにある。A third object of the present invention is to separate the mounting member on which the first semiconductor element is mounted from the mounting member on which the second semiconductor element is mounted, and to dispose the lower surface of the first mounting member (heat dissipation member). An object of the present invention is to provide a resin-sealed semiconductor device having good heat dissipation characteristics and a method for manufacturing the same by preventing the occurrence of resin burr when exposed from the sealing resin.

【００２８】さらに、本発明の第４の目的は、第２の搭
載部材をインナーリード部より上部に配することによ
り、第２の半導体素子をインナーリード部より上部に配
することができ、信頼性の高い大きな半導体素子を搭載
する小型の樹脂封止型半導体装置およびその製造方法を
提供することにある。Further, a fourth object of the present invention is to arrange the second mounting member above the inner lead portion, whereby the second semiconductor element can be arranged above the inner lead portion, which is reliable. To provide a small-sized resin-sealed semiconductor device having a large semiconductor element with high performance and a method for manufacturing the same.

【００２９】さらに、本発明の第５の目的は、搭載部材
を吊りリード部に配することにより、放熱部材の下面を
封止樹脂から露出させた場合における樹脂バリのない信
頼性の高い樹脂封止型半導体装置およびその製造方法
と、その製造に適したリードフレームを提供することに
ある。Further, a fifth object of the present invention is to provide a highly reliable resin seal without resin burrs when the lower surface of the heat dissipation member is exposed from the sealing resin by arranging the mounting member on the suspension lead portion. A static semiconductor device, a method for manufacturing the same, and a lead frame suitable for manufacturing the semiconductor device.

【００３０】本発明の第６の目的は、第１の半導体素子
を搭載する第１の搭載部材と第２の半導体素子を搭載す
る第２の搭載部材とを分離することにより、第１の搭載
部材（放熱部材）上に複数個の半導体素子の搭載を可能
にして信頼性のある樹脂封止型半導体装置およびその製
造に適したリードフレームを提供することにある。A sixth object of the present invention is to separate the first mounting member on which the first semiconductor element is mounted from the second mounting member on which the second semiconductor element is mounted so that the first mounting member is mounted. An object of the present invention is to provide a reliable resin-sealed semiconductor device that enables mounting of a plurality of semiconductor elements on a member (heat dissipation member) and a lead frame suitable for manufacturing the same.

【００３１】[0031]

【課題を解決するための手段】前記従来の課題を解決す
るために本発明のリードフレームとそれを用いた樹脂封
止型半導体装置およびその製造方法は以下のような構成
を有している。In order to solve the above conventional problems, a lead frame, a resin-sealed semiconductor device using the same and a method of manufacturing the same according to the present invention have the following configurations.

【００３２】すなわち本発明のリードフレームは、フレ
ーム枠と、前記フレーム枠の開口領域に設けられた放熱
部材と、前記放熱部材の上面に設けられた第１の半導体
素子を支持する第１の支持部と、前記放熱部材にその先
端が対向し、末端が前記フレーム枠に接続した複数のリ
ード部と、前記放熱部材をその先端部で支持し、末端が
前記フレーム枠に接続した吊りリード部と、前記吊りリ
ード部に設けられ、第２の半導体素子を支持する第２の
支持部を有し、前記放熱部材上面は前記リード部の下面
よりも下方に配置され、前記吊りリード部に設けられた
第２の支持部の下面は前記リード部の上面よりも上方に
配置されているリードフレームである。That is, the lead frame of the present invention includes a frame frame, a heat dissipation member provided in an opening region of the frame frame, and a first support for supporting a first semiconductor element provided on an upper surface of the heat dissipation member. And a plurality of lead portions whose tips are opposed to the heat dissipation member and whose ends are connected to the frame frame, and suspension lead portions whose ends are connected to the frame frame and whose ends are connected to the frame frame. A second supporting portion that is provided on the suspension lead portion and supports the second semiconductor element, the upper surface of the heat dissipation member is disposed below the lower surface of the lead portion, and the suspension lead portion is provided on the suspension lead portion. The lower surface of the second supporting portion is a lead frame arranged above the upper surface of the lead portion.

【００３３】また、放熱部材は開口部を有しているリー
ドフレームである。The heat dissipation member is a lead frame having an opening.

【００３４】また、放熱部材に設けられた第１の支持部
は上方に突出して設けられているリードフレームであ
る。Further, the first support portion provided on the heat dissipation member is a lead frame provided so as to project upward.

【００３５】本発明の樹脂封止型半導体装置は、放熱部
材と、前記放熱部材の上面に設けられ、第１の半導体素
子を支持する第１の支持部と、前記放熱部材にその先端
が対向した複数のリード部と、前記第１の半導体素子の
電極と前記リード部とを電気的に接続する金属細線と、
前記放熱部材をその先端部で支持した吊りリード部と、
前記吊りリード部に設けられ、第２の半導体素子を支持
する第２の支持部と、前記第２の半導体素子の電極と前
記リード部とを電気的に接続する金属細線と、前記第１
の半導体素子、前記第２の半導体素子および前記金属細
線を封止する封止樹脂とを有し、前記放熱部材上面は前
記リード部の下面よりも下方に配置され、前記吊りリー
ド部に設けられた第２の支持部の下面は前記リード部の
上面よりも上方に配置されている樹脂封止型半導体装置
である。The resin-encapsulated semiconductor device of the present invention has a heat dissipation section.
And a first semiconductor element provided on the upper surface of the heat dissipation member.
A first supporting portion for supporting the child, and the tip of the heat dissipating member
Of the plurality of lead portions facing each other and the first semiconductor element
A thin metal wire that electrically connects the electrode and the lead portion,
A suspension lead portion supporting the heat dissipation member at its tip,
Provided on the suspension lead portion to support the second semiconductor element
A second supporting portion, and an electrode of the second semiconductor element
A thin metal wire for electrically connecting the lead portion and the first
Semiconductor device, the second semiconductor device, and the metal thin film
The upper surface of the heat dissipation member is
It is arranged below the lower surface of the lead part and
The lower surface of the second support portion provided on the lead portion is
The resin-encapsulated semiconductor device is arranged above the upper surface .

【００３６】本発明の樹脂封止型半導体装置の製造方法
は、フレーム枠と、前記フレーム枠の開口領域に設けら
れた放熱部材と、前記放熱部材上面に設けられた第１の
半導体素子を支持する第１の支持部と、前記放熱部材に
その先端が対向し、末端が前記フレーム枠に接続した複
数のリード部と、前記放熱部材をその先端部で支持し、
末端が前記フレーム枠に接続した吊りリード部と、前記
吊りリード部に設けられ、第２の半導体素子を支持する
第２の支持部を有し、前記放熱部材上面は前記リード部
の下面よりも下方に配置され、前記吊りリード部に設け
られた第２の支持部の下面は前記リード部の上面よりも
上方に配置されているリードフレームを用意する工程
と、前記第１の支持部上に第１の半導体素子を搭載する
工程と、前記第１の半導体素子と前記複数のリード部の
一部のリード部とを金属細線で接続する工程と、前記吊
りリード部の第２の支持部上に第２の半導体素子を搭載
する工程と、前記第２の半導体素子と前記複数のリード
部の一部のリード部とを金属細線で接続する工程と、少
なくとも前記第１の半導体素子、第２の半導体素子、金
属細線、第１の支持部の上面、第２の支持部、リード部
を封止樹脂により封止する工程と、前記複数のリード部
の封止樹脂から突出した部分を成型してリード成形する
工程とよりなる樹脂封止型半導体装置の製造方法であ
る。According to the method of manufacturing a resin-sealed semiconductor device of the present invention, the frame frame, the heat dissipation member provided in the opening region of the frame frame, and the first semiconductor element provided on the upper surface of the heat dissipation member are supported. And a plurality of lead portions whose distal ends face the heat dissipation member and whose ends are connected to the frame, and which support the heat dissipation member at its front end portion,
The suspension lead has an end connected to the frame, and the second support provided on the suspension lead and supporting the second semiconductor element. The upper surface of the heat dissipation member is lower than the lower surface of the lead. A step of preparing a lead frame which is disposed below and the lower surface of the second support portion provided on the suspension lead portion is disposed above the upper surface of the lead portion; A step of mounting the first semiconductor element, a step of connecting the first semiconductor element and a part of the lead parts with a thin metal wire, and a second support part of the suspension lead part. Mounting a second semiconductor element on the second semiconductor element, connecting the second semiconductor element and a part of the lead portions with a thin metal wire, at least the first semiconductor element, the second semiconductor element, Semiconductor element, thin metal wire, first support A resin encapsulation mold comprising a step of encapsulating the upper surface of the substrate, a second support portion, and a lead portion with an encapsulating resin, and a step of molding the portions of the plurality of lead portions protruding from the encapsulating resin to form a lead. It is a method of manufacturing a semiconductor device.

【００３７】前記構成の通り、第１の半導体素子と第２
の半導体素子を搭載する搭載部を分離したため、第１の
半導体素子上に第２の半導体素子を搭載しないために第
１の半導体素子の電極の金属細線による接続可能なエリ
ヤを確保する分だけ余分に小さいことが要求される制
限、第１，第２の半導体素子の電極位置の金線接続上の
位置制限、および搭載位置のバラツキによる第１，第２
の半導体素子電極を接続する金属細線同士のタッチによ
る不良、第２の半導体素子の接着剤の塗布はみ出しバラ
ツキによる電極への悪影響を及ぼさない寸法の確保によ
る制限を必要としなくなった。As described above, the first semiconductor element and the second semiconductor element
Since the mounting part for mounting the semiconductor element of is separated, the second semiconductor element is not mounted on the first semiconductor element, so that an area is provided by the amount of ensuring the connectable area of the electrode of the first semiconductor element by the fine metal wire. Is required to be small, the position limitation of the electrode positions of the first and second semiconductor elements on the gold wire connection, and the variation of the mounting position.
It is no longer necessary to limit the defect by touching the thin metal wires connecting the semiconductor element electrodes with each other, and by securing the dimension that does not adversely affect the electrodes due to the spread of the adhesive on the second semiconductor element.

【００３８】また、第１の半導体素子と第２の半導体素
子の間に封止樹脂を存在させることが可能となり、熱お
よび水分に対する封止樹脂の保持力の高い樹脂封止型半
導体装置が得られる。また、小さな第１の半導体素子と
大きな第２の半導体素子を搭載可能にするため搭載範囲
の拡大により大型の半導体素子を搭載した高密度な半導
体装置を実現できるものである。Further, it becomes possible to allow the sealing resin to exist between the first semiconductor element and the second semiconductor element, and a resin-sealed semiconductor device having a high retention of the sealing resin against heat and moisture can be obtained. To be Further, since a small first semiconductor element and a large second semiconductor element can be mounted, the mounting range can be expanded to realize a high-density semiconductor device mounting a large semiconductor element.

【００３９】また、第２の半導体素子の電極とインナー
リードの接続位置を第１の半導体素子の電極とインナー
リードの接続位置より外側に配することができるためワ
イヤー流れによるタッチ不良が少なくなり安定した生産
が可能になった。Further, since the connection position between the electrode of the second semiconductor element and the inner lead can be arranged outside the connection position between the electrode of the first semiconductor element and the inner lead, touch failure due to wire flow is reduced and stable. Made possible.

【００４０】また、第１の半導体素子を搭載する放熱板
は上面および側面には、封止樹脂が存在するものの裏面
側には封止樹脂が存在しない。封止樹脂の応力および実
装後の応力により悪影響を受け近傍の封止樹脂にクラッ
クが発生する問題があるが、小さな半導体素子を選択し
て搭載できるため応力が少なくでき、水分が吸水し、実
装時の高温で気化膨張により封止樹脂の保持力が低下し
て、信頼性が悪化するという問題（ポップコーンクラッ
ク）が少なくでき信頼性が向上した。Further, the heat dissipation plate on which the first semiconductor element is mounted has the sealing resin on the upper surface and the side surfaces, but does not have the sealing resin on the back surface side. Although there is a problem that the stress of the sealing resin and the stress after mounting adversely affect the cracking of the sealing resin in the vicinity, stress can be reduced because small semiconductor elements can be selected and mounted, moisture absorbs water, and mounting The problem that the reliability of the encapsulating resin is reduced due to vaporization and expansion at a high temperature at that time and the reliability is deteriorated (popcorn crack) can be reduced, and the reliability is improved.

【００４１】[0041]

【発明の実施の形態】以下、本発明のリードフレームと
それを用いた樹脂封止型半導体装置およびその製造方法
について、その一実施形態を図面を参照しながら説明す
る。BEST MODE FOR CARRYING OUT THE INVENTION A lead frame of the present invention, a resin-sealed semiconductor device using the same, and a method of manufacturing the same will be described below with reference to the drawings.

【００４２】まず本発明の第１の実施形態のリードフレ
ームとそれを用いた樹脂封止型半導体装置およびその製
造方法について説明する。First, a lead frame according to the first embodiment of the present invention, a resin-sealed semiconductor device using the same, and a method for manufacturing the same will be described.

【００４３】図１は本実施形態のリードフレームを示す
図であり、図１（ａ）は平面図であり、図１（ｂ）は図
１（ａ）のＢ−Ｂ１箇所の断面図、図１（ｃ）は図１
（ａ）のＣ−Ｃ１箇所の断面図である。FIG. 1 is a view showing a lead frame of this embodiment, FIG. 1 (a) is a plan view, and FIG. 1 (b) is a sectional view taken along the line BB1 in FIG. 1 (a). Figure 1 (c) is
It is sectional drawing of CC line 1 of (a).

【００４４】図１に示すように、本実施形態のリードフ
レームは、銅（Ｃｕ）材よりなるフレーム枠１と、その
フレーム枠１の開口領域に設けられた第１の半導体素子
を支持する支持部を有した放熱部材２と、放熱部材２を
その先端部で支持し、末端部でフレーム枠１と接続した
吊りリード部３と、放熱部材２にその先端が対向し、末
端がフレーム枠１に接続した複数の信号接続用のリード
部４と、放熱部材２上面に突出して設けられた第１の支
持部５と、放熱部材２の各辺に設けられた吊りリード部
３に第２の半導体素子を支持する第２の支持部６を有し
たリードフレームであり、放熱部材２をリード部４面よ
りも下方に配置するために吊りリード部３にダウンセッ
ト部Ｄ（屈曲）を有し、第２の支持部６をリード部４よ
りも上方に配置するためにアップセット部Ｕ（屈曲）を
有しているものである。またリード部４はインナーリー
ド部４ａとアウターリード部４ｂとにより構成されてい
る。インナーリードの表面には図示しないが銀メッキが
施されている。また、リードフレーム全面にパラジウム
（Ｐｄ）メッキをしてもよい。As shown in FIG. 1, the lead frame of this embodiment is a support for supporting a frame frame 1 made of a copper (Cu) material and a first semiconductor element provided in an opening region of the frame frame 1. A heat dissipation member 2 having a portion, a suspension lead portion 3 that supports the heat dissipation member 2 at its tip and is connected to the frame frame 1 at the end, and its end faces the heat dissipation member 2, and the end is the frame frame 1 To the plurality of signal connecting leads 4, the first supporting portion 5 provided on the upper surface of the heat dissipation member 2 so as to project, and the second suspension lead portion 3 provided on each side of the heat dissipation member 2. A lead frame having a second support portion 6 for supporting a semiconductor element, and having a downset portion D (bending) in the suspension lead portion 3 for disposing the heat dissipation member 2 below the surface of the lead portion 4. , The second support portion 6 is arranged above the lead portion 4. Those having an upset portion U (bend) in order. The lead portion 4 is composed of an inner lead portion 4a and an outer lead portion 4b. Although not shown, the surface of the inner lead is plated with silver. Alternatively, the entire surface of the lead frame may be plated with palladium (Pd).

【００４５】本実施形態のリードフレームでは、半導体
素子を支持する部分である支持部は吊りリード部３と放
熱部材２上に形成されており、放熱部材２の上面は支持
部を除いてエッチングあるいはプレス加工で凹部を有
し、支持部以外は封止樹脂を介在させることができる。
また樹脂封止した際は、第１の半導体素子の上面と第２
の半導体素子の底面とには封止樹脂を介在させることが
でき、封止樹脂の保持力の高い樹脂封止型半導体装置を
実現できるものである。そして第２の半導体素子を支持
する第２の支持部６を封止樹脂より露出させない構造に
することができるため、封止樹脂との密着性が増大する
ことになり、境界からの水分や湿気の侵入を抑制できる
ものである。In the lead frame of the present embodiment, the supporting portion which is a portion for supporting the semiconductor element is formed on the suspension lead portion 3 and the heat radiating member 2, and the upper surface of the heat radiating member 2 is etched or removed except for the support portion. It is possible to have a concave portion by press working and to interpose a sealing resin except for the supporting portion.
When resin-sealed, the upper surface of the first semiconductor element and the second semiconductor element are
The encapsulating resin can be interposed between the semiconductor element and the bottom surface of the semiconductor element, and a resin-encapsulated semiconductor device having a high retaining force for the encapsulating resin can be realized. Then, since the second supporting portion 6 supporting the second semiconductor element can be structured so as not to be exposed from the sealing resin, the adhesiveness with the sealing resin is increased, and moisture or moisture from the boundary is increased. It is possible to suppress the invasion of.

【００４６】また、第２の半導体素子を支持する第２の
支持部６は吊りリード部３上にあり、インナーリード先
端位置より大きな第２の半導体素子を搭載することがで
き小型の半導体装置を提供できる。また、吊りリード部
３のダウンセット部Ｄ量を調整することにより半導体装
置の底面より露出する構造とダウンセット量を少なくす
ることにより露出しない構造に使用できるリードフレー
ムである。Further, the second support portion 6 for supporting the second semiconductor element is on the suspension lead portion 3, and the second semiconductor element larger than the tip position of the inner lead can be mounted, and a small semiconductor device can be provided. Can be provided. Further, the lead frame can be used for a structure exposed from the bottom surface of the semiconductor device by adjusting the amount of downset portion D of the suspension lead portion 3 and a structure not exposed by reducing the amount of downset.

【００４７】なお、支持部６の形状は本実施形態では角
形としているが、形状、位置、面積については搭載する
半導体素子の底面積により設定する。末端がフレーム枠
に接続した複数の信号接続用のリード部４のインナーリ
ードの先端は搭載する半導体素子の電極との金属細線に
よる接続位置によりその長さを設定する。たとえば第１
の半導体素子のインナーリードの先端と第２の半導体素
子のインナーリードの先端位置を別に設定することによ
り、第１の半導体素子の電極とインナーリードを接続す
る金属細線の長さを短くできる。また、第２の半導体素
子の下部に第１の半導体素子のインナーリードの先端位
置を設定することにより第１の半導体素子の電極とイン
ナーリードを接続する金属細線の長さを短くできる。Although the shape of the support portion 6 is rectangular in this embodiment, the shape, position, and area are set according to the bottom area of the semiconductor element to be mounted. The lengths of the tips of the inner leads of the lead portions 4 for signal connection, the ends of which are connected to the frame, are set according to the connection position with the metal thin wire with the electrode of the semiconductor element to be mounted. For example, the first
By setting the tip positions of the inner leads of the semiconductor element and the tip positions of the inner leads of the second semiconductor element separately, the length of the thin metal wire connecting the electrode of the first semiconductor element and the inner lead can be shortened. Further, by setting the tip position of the inner lead of the first semiconductor element below the second semiconductor element, the length of the thin metal wire connecting the electrode of the first semiconductor element and the inner lead can be shortened.

【００４８】また、本実施形態のリードフレームは図１
で示した構成よりなるリードフレームパターンが１つで
はなく複数個、左右、上下の連続した配列になっている
ものである。The lead frame of this embodiment is shown in FIG.
The lead frame pattern having the structure shown in FIG.

【００４９】次に本実施形態の樹脂封止型半導体装置お
よびその製造方法について説明する。Next, the resin-sealed semiconductor device of this embodiment and the method for manufacturing the same will be described.

【００５０】図２〜図９は、図１に示したリードフレー
ムを用いた樹脂封止型半導体装置の製造方法を示す工程
ごとの断面図である。2 to 9 are sectional views of respective steps showing a method of manufacturing a resin-sealed semiconductor device using the lead frame shown in FIG.

【００５１】まず図２に示すようにフレーム枠と、その
フレーム枠の開口領域に設けられた第１の半導体素子を
支持する第１の支持部５を有した放熱部材２と、その放
熱部材２をその先端部で支持し、末端部でフレーム枠と
接続した吊りリード部と、放熱部材にその先端が対向
し、末端がフレーム枠に接続した複数のリード部４と、
第２の半導体素子を支持する第２の支持部６を吊りリー
ド部に有したリードフレームを用意する。First, as shown in FIG. 2, a heat radiating member 2 having a frame frame and a first supporting portion 5 for supporting the first semiconductor element provided in the opening region of the frame frame, and the heat radiating member 2 thereof. A suspension lead portion whose end portion is connected to the frame frame, and a plurality of lead portions 4 whose tip ends face the heat dissipation member and whose end portions are connected to the frame frame.
A lead frame having a second supporting portion 6 for supporting the second semiconductor element as a suspension lead portion is prepared.

【００５２】そして図３に示すように、放熱部材２の上
面に設けられた第１の支持部５上に第１の半導体素子７
ａを銀ペースト等の接着剤８により接着して搭載する。Then, as shown in FIG. 3, the first semiconductor element 7 is provided on the first supporting portion 5 provided on the upper surface of the heat dissipation member 2.
Then, a is bonded and mounted with an adhesive 8 such as silver paste.

【００５３】次に図４に示すように、放熱部材２の支持
部５上に搭載された第１の半導体素子７ａの表面の電極
パッド（図示せず）とリード部４のインナーリード部４
ａとを金属細線９により電気的に接続する。Next, as shown in FIG. 4, electrode pads (not shown) on the surface of the first semiconductor element 7 a mounted on the supporting portion 5 of the heat dissipation member 2 and the inner lead portion 4 of the lead portion 4.
It is electrically connected to a by a thin metal wire 9.

【００５４】そして図５に示すように、吊りリード部の
上面に設けられた第２の支持部６上に第２の半導体素子
７ｂを銀ペースト等の接着剤８により接着して搭載す
る。Then, as shown in FIG. 5, the second semiconductor element 7b is mounted on the second support portion 6 provided on the upper surface of the suspension lead portion by adhering it with an adhesive 8 such as silver paste.

【００５５】次に図６に示すように、搭載された第２の
半導体素子７ｂの表面の電極パッド（図示せず）とリー
ド部４のインナーリード部４ａとを金属細線９により電
気的に接続する。Next, as shown in FIG. 6, an electrode pad (not shown) on the surface of the mounted second semiconductor element 7b and the inner lead portion 4a of the lead portion 4 are electrically connected by a thin metal wire 9. To do.

【００５６】次に図７に示すように、封止シート１０を
付設した金型（ハッチング部）に半導体素子を搭載した
リードフレームを搭載して放熱部材２の裏面に対して封
止シート１０を密着させる。Next, as shown in FIG. 7, a lead frame having a semiconductor element mounted thereon is mounted on a mold (hatching portion) provided with the encapsulating sheet 10, and the encapsulating sheet 10 is attached to the back surface of the heat dissipation member 2. Make them adhere closely.

【００５７】次に図８に示すように、封止金型内におい
て、トランスファーモールドによってエポキシ系樹脂よ
りなる封止樹脂１１を注入し、リードフレームの外囲と
して放熱部材２の下面を放熱機能を有するように封止樹
脂１１の底面に露出させ、第１、第２の半導体素子７
ａ，７ｂ、リード部４のインナーリード部４ａと金属細
線９の接続領域を封止する。第１、第２の半導体素子７
ａ，７ｂ間にも封止樹脂１１が充填される。この場合、
封止シートを用いて放熱部材２の底面をマスクした状態
で樹脂封止しているので、放熱部材２の底面を効率よく
露出できる。Next, as shown in FIG. 8, a sealing resin 11 made of an epoxy resin is injected by transfer molding in a sealing die, and the lower surface of the heat radiating member 2 is provided with a heat radiating function as an outer circumference of the lead frame. It is exposed on the bottom surface of the sealing resin 11 so as to have the first and second semiconductor elements 7.
a, 7b, the connection area between the inner lead portion 4a of the lead portion 4 and the thin metal wire 9 is sealed. First and second semiconductor elements 7
The sealing resin 11 is also filled between a and 7b. in this case,
Since the resin sealing is performed using the sealing sheet while the bottom surface of the heat dissipation member 2 is masked, the bottom surface of the heat dissipation member 2 can be efficiently exposed.

【００５８】次に図９に示すように、樹脂封止後は、封
止シートをピールオフにより放熱部材２の底面から除去
する。そしてリード部４の切断箇所に対して、金型によ
る切断刃でリードカットを行い、リード成形（ベンディ
ング加工）を行うことにより、リードフレームの放熱部
材２の第１の支持部５上に第１の半導体素子７ａが接着
剤８により搭載され、吊りリード部の第２の支持部６上
に第２の半導体素子７ｂが接着剤８により搭載され、第
１，第２の半導体素子７ａ，７ｂの電極とリード部４の
インナーリード部４ａとが金属細線９により電気的に接
続され、外囲が封止樹脂１１により封止され、そして封
止樹脂１１の側面からはアウターリード部４ｂが露出し
た樹脂封止型半導体装置であって、放熱部材２の下面が
封止樹脂１１の底面から露出した構造の樹脂封止型半導
体装置を得る。Next, as shown in FIG. 9, after sealing with resin, the sealing sheet is peeled off from the bottom surface of the heat dissipation member 2. Then, the cutting portion of the lead portion 4 is subjected to lead cutting with a cutting blade by a die, and lead molding (bending processing) is performed, so that the first supporting portion 5 of the heat radiating member 2 of the lead frame is firstly placed. The semiconductor element 7a is mounted with the adhesive 8, and the second semiconductor element 7b is mounted with the adhesive 8 on the second supporting portion 6 of the suspension lead portion. The electrode and the inner lead portion 4a of the lead portion 4 are electrically connected by the fine metal wire 9, the outer circumference is sealed by the sealing resin 11, and the outer lead portion 4b is exposed from the side surface of the sealing resin 11. A resin-sealed semiconductor device having a structure in which the lower surface of the heat dissipation member 2 is exposed from the bottom surface of the sealing resin 11 is obtained.

【００５９】リード部４より上部にアップセットされた
吊りリード部に設けた第２の支持部６と吊リード部に保
持された放熱部材２にある第１の支持部５はリードフレ
ームの加工により寸法を決定するため第１，第２の半導
体素子７ａ，７ｂの間隔が保たれ、封止樹脂１１の注入
による位置のシフトによる金属細線９のショート、封止
樹脂１１の充填不良等が少ない。第１，第２の半導体素
子７ａ，７ｂ間に封止樹脂１１が存在し、吸水性の高い
接着剤を少なくする接着法のため接着剤による影響が少
なく封止樹脂１１の保持力によるパッケージクラックの
発生の少ない信頼性の高い樹脂封止型半導体装置であ
る。The second supporting portion 6 provided on the suspension lead portion upset above the lead portion 4 and the first supporting portion 5 on the heat dissipation member 2 held by the suspension lead portion are processed by the lead frame. Since the dimension is determined, the distance between the first and second semiconductor elements 7a and 7b is maintained, and the short-circuiting of the fine metal wires 9 due to the shift of the position due to the injection of the sealing resin 11, the defective filling of the sealing resin 11 and the like are small. Since the encapsulating resin 11 is present between the first and second semiconductor elements 7a and 7b and the adhesive method reduces the amount of the highly water-absorbing adhesive, the adhesive is less affected and the package cracks due to the holding force of the encapsulating resin 11. It is a highly reliable resin-sealed semiconductor device in which the occurrence of noise does not occur.

【００６０】また、リード部４より上部にアップセット
された吊りリード部上面に設けた第２の支持部６にリー
ド先端部より大きな半導体素子を搭載することができ、
第２の半導体素子７ｂとリード部４を接続する金属細線
９の長さを短くでき小型の半導体装置を提供できる。Further, a semiconductor element larger than the lead tip portion can be mounted on the second support portion 6 provided on the upper surface of the hanging lead portion which is upset above the lead portion 4,
The length of the thin metal wire 9 connecting the second semiconductor element 7b and the lead portion 4 can be shortened, and a small semiconductor device can be provided.

【００６１】また、第１の半導体素子７ａとリード部４
を接続する金属細線９の位置を第２の半導体素子７ｂと
リード部４を接続する位置より内部にすることができる
ため、長さを短くでき半導体素子の大きさの制限やパッ
ト位置、金属細線のループ形状の制約が少なくなる。In addition, the first semiconductor element 7a and the lead portion 4
Since the position of the metal thin wire 9 for connecting to the second semiconductor element 7b and the lead portion 4 can be set to the inner side, the length can be shortened, the size of the semiconductor element can be restricted, the pad position, and the metal thin wire. There are less restrictions on the loop shape of.

【００６２】また、第２の半導体素子７ｂを支持する第
２の支持部６は封止樹脂１１より露出させない構造であ
るため、封止樹脂１１との密着性が増大することにな
り、境界からの水分や湿気の侵入が抑制される。また第
１の半導体素子７ａを搭載する放熱部材２と第１の半導
体素子７ａとの底面のとの間にも封止樹脂１１を充填で
きるためパッケージクラックの発生等を防止して耐湿性
が向上するものである。Further, since the second supporting portion 6 for supporting the second semiconductor element 7b has a structure which is not exposed from the sealing resin 11, the adhesiveness with the sealing resin 11 is increased, and the boundary is reduced. The ingress of moisture and humidity is suppressed. Further, since the sealing resin 11 can be filled between the heat dissipation member 2 mounting the first semiconductor element 7a and the bottom surface of the first semiconductor element 7a, the occurrence of package cracks is prevented and the moisture resistance is improved. To do.

【００６３】従来発熱の多い素子でも大型の半導体素子
の上に搭載しなければならないことが多かったが、第１
の半導体素子７ａはバーポーラ等の発熱の多い小型の半
導体素子を搭載するため効率よく実装基板に熱を逃がす
ことができる。また、第１の半導体素子７ａを支持する
第１の支持部５は、第１の半導体素子７ａより小型にす
ることができ、放熱部材２の反りを少なくして放熱部材
２に樹脂バリの発生を少なくでき、対パッケージクラッ
ク性が向上する。また、リードフレームの加工上の制限
と素子上のパット数等を考慮しインナーリードの位置を
金属細線の接続位置に適した配置にすることにより生産
性、品質を向上できる。Conventionally, it has often been necessary to mount an element that generates a lot of heat on a large semiconductor element.
Since the semiconductor element 7a of (1) is equipped with a small semiconductor element that generates a large amount of heat such as a bar polar, it is possible to efficiently dissipate the heat to the mounting substrate. Further, the first supporting portion 5 that supports the first semiconductor element 7a can be made smaller than the first semiconductor element 7a, and the warping of the heat dissipation member 2 can be reduced to generate resin burrs on the heat dissipation member 2. And the crack resistance to the package is improved. Further, the productivity and the quality can be improved by arranging the position of the inner lead suitable for the connection position of the fine metal wire in consideration of the processing limitation of the lead frame and the number of pads on the element.

【００６４】次に本発明の第２の実施形態のリードフレ
ームについて説明する。Next, a lead frame according to the second embodiment of the present invention will be described.

【００６５】図１０は本実施形態のリードフレームを示
す図であり、図１０（ａ）は平面図であり、図１０
（ｂ）は図１０（ａ）のＤ−Ｄ１箇所の断面図、図１０
（ｃ）は図１０（ａ）のＥ−Ｅ１箇所の断面図である。FIG. 10 is a view showing the lead frame of this embodiment, and FIG. 10 (a) is a plan view.
10B is a cross-sectional view taken along the line D-D1 in FIG.
10C is a cross-sectional view taken along the line E-E1 in FIG.

【００６６】図１０に示すように、本実施形態のリード
フレームは、Ｃｕ材よりなるフレーム枠１と、そのフレ
ーム枠１の開口領域に設けられた第１の半導体素子を支
持する第１の支持部５と、その第１の支持部５をその先
端部で支持し、末端部でフレーム枠１と接続した吊りリ
ード部３と、第１の支持部５にその先端が対向し、末端
がフレーム枠１に接続した複数の信号接続用のリード部
４と、第１の支持部５の各辺に設けられた吊りリード部
３に第２の半導体素子を支持する第２の支持部６を有し
たリードフレームであり、第１の支持部５をリード部４
よりも下方に配置するために吊りリード部３にダウンセ
ット部Ｄと、第２の支持部６をリード部４よりも上方に
配置するためにアップセット部Ｕを有しているものであ
る。As shown in FIG. 10, the lead frame of the present embodiment has a first frame 1 made of a Cu material and a first support for supporting the first semiconductor element provided in the opening region of the frame 1. The portion 5, the first support portion 5 is supported by the tip portion thereof, the suspension lead portion 3 connected to the frame frame 1 at the end portion, and the tip is opposed to the first support portion 5, and the end portion is the frame. A plurality of signal connecting lead portions 4 connected to the frame 1 and a second supporting portion 6 for supporting the second semiconductor element are provided on the suspension lead portions 3 provided on each side of the first supporting portion 5. The lead frame has the first support portion 5 and the lead portion 4
The suspension lead portion 3 has a downset portion D for arranging the second support portion 6 above and the upset portion U for arranging the second support portion 6 above the lead portion 4.

【００６７】また、第２の半導体素子を支持する第２の
支持部６は吊りリード部３上にあり、インナーリード先
端位置より大きな第２の半導体素子を搭載することがで
き、小型の半導体装置を提供できる。Further, the second support portion 6 for supporting the second semiconductor element is on the suspension lead portion 3, and it is possible to mount the second semiconductor element larger than the tip position of the inner lead, and a small semiconductor device. Can be provided.

【００６８】また、リード部４はインナーリード部４ａ
とアウターリード部４ｂとにより構成されている。イン
ナーリードの表面には図示しないが銀メッキが施されて
いる。また、リードフレーム全面にＰｄメッキをしても
よい。The lead portion 4 is the inner lead portion 4a.
And an outer lead portion 4b. Although not shown, the surface of the inner lead is plated with silver. Alternatively, the entire surface of the lead frame may be plated with Pd.

【００６９】本実施形態のリードフレームでは、半導体
素子を支持する部分である第２の支持部６は吊りリード
部３上に形成され、樹脂封止した際は、第１の半導体素
子の上面と第２の半導体素子の底面とには封止樹脂を介
在させることができ、封止樹脂の保持力の高い樹脂封止
型半導体装置を実現できるものである。そして第１、第
２の半導体素子を支持する支持部を封止樹脂より露出さ
せない構造にすることができるため、封止樹脂との密着
性が増大することになり、境界からの水分や湿気の侵入
を抑制できるものである。また、吊りリード部３のダウ
ンセット部量を調整することにより半導体装置の底面よ
り露出しない構造に使用できるリードフレームである。
また、第２の半導体素子の下部に第１の半導体素子のイ
ンナーリードの先端位置を設定することにより第１の半
導体素子の電極とインナーリード部を接続する金属細線
の長さを短くできる。In the lead frame of the present embodiment, the second supporting portion 6 which is a portion for supporting the semiconductor element is formed on the suspension lead portion 3, and when resin-sealed, the second supporting portion 6 serves as the upper surface of the first semiconductor element. An encapsulating resin can be interposed between the bottom surface of the second semiconductor element and a resin-encapsulated semiconductor device having a high retaining force for the encapsulating resin. Further, since the supporting portion supporting the first and second semiconductor elements can be structured so as not to be exposed from the sealing resin, the adhesion with the sealing resin is increased, and moisture and moisture from the boundary can be prevented. Intrusion can be suppressed. In addition, the lead frame can be used in a structure that is not exposed from the bottom surface of the semiconductor device by adjusting the amount of the downset portion of the suspension lead portion 3.
Further, by setting the tip position of the inner lead of the first semiconductor element below the second semiconductor element, the length of the thin metal wire connecting the electrode of the first semiconductor element and the inner lead portion can be shortened.

【００７０】また、本実施形態のリードフレームは図１
０で示した構成よりなるリードフレームパターンが１つ
ではなく複数個、左右、上下の連続した配列になってい
るものである。The lead frame of this embodiment is shown in FIG.
The lead frame pattern having the structure indicated by 0 is not one, but a plurality of lead frame patterns are arranged in a continuous array on the left, right, and top and bottom.

【００７１】本実施形態で示したリードフレームを用い
て樹脂封止型半導体装置を形成することによっても、前
記同様の効果を得ることができる。The same effect as described above can be obtained by forming the resin-sealed semiconductor device using the lead frame shown in this embodiment.

【００７２】次に本発明の第３の実施形態のリードフレ
ームについて説明する。Next, a lead frame according to the third embodiment of the present invention will be described.

【００７３】図１１は本実施形態のリードフレームを示
す図であり、図１１（ａ）は平面図であり、図１１
（ｂ）は図１１（ａ）のＦ−Ｆ１箇所の断面図、図１１
（ｃ）は図１１（ａ）のＧ−Ｇ１箇所の断面図である。FIG. 11 is a view showing the lead frame of this embodiment, and FIG. 11 (a) is a plan view.
11B is a cross-sectional view taken along the line F-F1 in FIG.
FIG. 11C is a sectional view taken along the line G-G1 in FIG.

【００７４】本実施形態のリードフレームは、Ｃｕ材よ
りなるフレーム枠１と、そのフレーム枠１の開口領域に
設けられた第１、第２の半導体素子を支持する第１の支
持部５と、第１の支持部５をその先端部で支持し、末端
部でフレーム枠１と接続した吊りリード部３と、第１の
支持部５にその先端が対向し、末端がフレーム枠１に接
続した複数の信号接続用のリード部４と、第１の支持部
５の各辺に設けられた吊りリード部３に第３の半導体素
子を支持する第２の支持部６を有したリードフレームで
あり、第１の支持部５をリード部４よりも下方に配置す
るために吊りリード部３にダウンセット部Ｄと、第２の
支持部６をリード部４よりも上方に配置するためにアッ
プセット部Ｕを有しているものである。またリード部４
はインナーリード部４ａとアウターリード部４ｂとによ
り構成されている。The lead frame of this embodiment has a frame frame 1 made of Cu material, and a first support portion 5 for supporting the first and second semiconductor elements provided in the opening region of the frame frame 1, The first support portion 5 is supported at its tip end and the suspension lead portion 3 connected to the frame 1 at the end, and the tip is opposed to the first support 5 and the end is connected to the frame 1. A lead frame having a plurality of lead portions 4 for signal connection and a second support portion 6 for supporting a third semiconductor element on a suspension lead portion 3 provided on each side of the first support portion 5. , A downset portion D on the suspension lead portion 3 in order to arrange the first support portion 5 below the lead portion 4, and an upset in order to arrange the second support portion 6 above the lead portion 4. It has a section U. In addition, the lead portion 4
Is composed of an inner lead portion 4a and an outer lead portion 4b.

【００７５】本実施形態のリードフレームでは、半導体
素子を支持する部分である第２の支持部６は吊りリード
部３上面に形成され、樹脂封止した際は、第１、第２の
半導体素子の上面と第３の半導体素子の底面とには封止
樹脂を介在させることができ、封止樹脂の保持力の高い
樹脂封止型半導体装置を実現できるものである。そして
半導体素子を支持する支持部を封止樹脂より露出させな
い構造にすることができるため、封止樹脂との密着性が
増大することになり、境界からの水分や湿気の侵入を抑
制できるものである。また、吊りリード部３のダウンセ
ット部量を調整することにより半導体装置の底面より露
出しない構造に使用できるリードフレームである。In the lead frame of this embodiment, the second supporting portion 6 which is a portion for supporting the semiconductor element is formed on the upper surface of the suspension lead portion 3, and when the resin is sealed, the first and second semiconductor elements are formed. A sealing resin can be interposed between the upper surface of the above and the bottom surface of the third semiconductor element, and a resin-sealed semiconductor device having a high holding force for the sealing resin can be realized. Further, since the supporting portion for supporting the semiconductor element can be structured so as not to be exposed from the sealing resin, the adhesiveness with the sealing resin is increased, and it is possible to suppress the intrusion of moisture and moisture from the boundary. is there. In addition, the lead frame can be used in a structure that is not exposed from the bottom surface of the semiconductor device by adjusting the amount of the downset portion of the suspension lead portion 3.

【００７６】また、本実施形態のリードフレームは図１
１で示した構成よりなるリードフレームパターンが１つ
ではなく複数個、左右、上下の連続した配列になってい
るものである。The lead frame of this embodiment is shown in FIG.
The lead frame pattern having the configuration shown in 1 is not one, but a plurality of lead frame patterns are arranged in a continuous array on the left, right, and top and bottom.

【００７７】本実施形態で示したリードフレームを用い
て樹脂封止型半導体装置を形成することによっても、前
記同様の効果を得ることができる。The same effect as described above can be obtained by forming a resin-sealed semiconductor device using the lead frame shown in this embodiment.

【００７８】また、本実施形態の要旨を越えない限り種
々の変形実施が可能であることは言うまでもない。例え
ば、上部に搭載する半導体素子上に新たに三段目の半導
体素子を搭載して高密度化することも可能である。Needless to say, various modifications can be made without departing from the spirit of this embodiment. For example, it is possible to newly mount a semiconductor element of the third stage on the semiconductor element mounted on the upper part to increase the density.

【００７９】[0079]

【発明の効果】本発明のリードフレームを用いて樹脂封
止型半導体装置を構成した場合には、第１の半導体素子
の上面と第２の半導体素子の底面との間に封止樹脂を存
在させることが可能となり、封止樹脂の保持力の高い樹
脂封止型半導体装置が得られる。また、半導体素子を支
持する支持部の下面を封止樹脂より露出させない構造に
することができるため封止樹脂との密着性が増大するこ
とになり、境界からの水分や湿気の侵入が抑制される。
よって耐湿性を向上させることができる。When a resin-sealed semiconductor device is constructed using the lead frame of the present invention, the sealing resin is present between the upper surface of the first semiconductor element and the bottom surface of the second semiconductor element. It is possible to obtain a resin-encapsulated semiconductor device having a high retaining force for the encapsulating resin. In addition, since the lower surface of the supporting portion that supports the semiconductor element can be structured so that it is not exposed from the sealing resin, the adhesion with the sealing resin is increased, and the ingress of moisture and moisture from the boundary is suppressed. It
Therefore, the moisture resistance can be improved.

【００８０】さらに第１の半導体素子より大きな第２の
半導体素子を搭載できる構成により、従来あった搭載制
限を緩和して半導体素子を搭載することができ、大型素
子を搭載した高密度半導体装置を実現できるものであ
る。Furthermore, the second semiconductor element, which is larger than the first semiconductor element, can be mounted, so that the mounting restrictions existing in the past can be relaxed and the semiconductor element can be mounted. It can be realized.

【図面の簡単な説明】[Brief description of drawings]

【図１】本発明の第１の実施形態のリードフレームを示
す図FIG. 1 is a diagram showing a lead frame according to a first embodiment of the present invention.

【図２】本発明の第１の実施形態の樹脂封止型半導体装
置の製造方法を示す断面図FIG. 2 is a cross-sectional view showing the method of manufacturing the resin-sealed semiconductor device of the first embodiment of the present invention.

【図３】本発明の第１の実施形態の樹脂封止型半導体装
置の製造方法を示す断面図FIG. 3 is a cross-sectional view showing the method of manufacturing the resin-sealed semiconductor device of the first embodiment of the present invention.

【図４】本発明の第１の実施形態の樹脂封止型半導体装
置の製造方法を示す断面図FIG. 4 is a cross-sectional view showing the method of manufacturing the resin-sealed semiconductor device of the first embodiment of the present invention.

【図５】本発明の第１の実施形態の樹脂封止型半導体装
置の製造方法を示す断面図FIG. 5 is a sectional view showing the method of manufacturing the resin-sealed semiconductor device according to the first embodiment of the present invention.

【図６】本発明の第１の実施形態の樹脂封止型半導体装
置の製造方法を示す断面図FIG. 6 is a cross-sectional view showing the method of manufacturing the resin-sealed semiconductor device of the first embodiment of the present invention.

【図７】本発明の第１の実施形態の樹脂封止型半導体装
置の製造方法を示す断面図FIG. 7 is a sectional view showing the method of manufacturing the resin-sealed semiconductor device according to the first embodiment of the present invention.

【図８】本発明の第１の実施形態の樹脂封止型半導体装
置の製造方法を示す断面図FIG. 8 is a sectional view showing the method of manufacturing the resin-sealed semiconductor device according to the first embodiment of the present invention.

【図９】本発明の第１の実施形態の樹脂封止型半導体装
置を示す断面図FIG. 9 is a sectional view showing a resin-encapsulated semiconductor device according to a first embodiment of the present invention.

【図１０】本発明の第２の実施形態のリードフレームを
示す図FIG. 10 is a diagram showing a lead frame according to a second embodiment of the present invention.

【図１１】本発明の第３の実施形態のリードフレームを
示す図FIG. 11 is a diagram showing a lead frame according to a third embodiment of the present invention.

【図１２】従来のリードフレームを示す図FIG. 12 is a diagram showing a conventional lead frame.

【図１３】従来の樹脂封止型半導体装置の製造方法を示
す断面図FIG. 13 is a cross-sectional view showing a method for manufacturing a conventional resin-encapsulated semiconductor device.

【図１４】従来の樹脂封止型半導体装置の製造方法を示
す断面図FIG. 14 is a sectional view showing a method of manufacturing a conventional resin-encapsulated semiconductor device.

【図１５】従来の樹脂封止型半導体装置の製造方法を示
す断面図FIG. 15 is a sectional view showing a method of manufacturing a conventional resin-encapsulated semiconductor device.

【図１６】従来の樹脂封止型半導体装置の製造方法を示
す断面図FIG. 16 is a sectional view showing a method of manufacturing a conventional resin-encapsulated semiconductor device.

【図１７】従来の樹脂封止型半導体装置の製造方法を示
す断面図FIG. 17 is a cross-sectional view showing a method for manufacturing a conventional resin-sealed semiconductor device.

【図１８】従来の樹脂封止型半導体装置を示す断面図FIG. 18 is a sectional view showing a conventional resin-sealed semiconductor device.

【符号の説明】[Explanation of symbols]

１ フレーム枠 ２ 放熱部材 ３ 吊りリード部 ４ リード部 ５ 第１の支持部 ６ 第２の支持部 ７ａ 第１の半導体素子 ７ｂ 第２の半導体素子 ８ 接着剤 ９ 金属細線 １０ 封止シート １１ 封止樹脂 １０１ フレーム枠 １０２ ダイパッド部 １０３ 吊りリード部 １０４ リード部 １０５ ディプレス部 １０６ 半導体素子 １０７ 接着剤 １０８ 金属細線 １０９ 封止樹脂 1 frame 2 Heat dissipation member 3 Hanging leads 4 lead 5 First support 6 Second support 7a First semiconductor element 7b Second semiconductor device 8 adhesive 9 thin metal wires 10 Sealing sheet 11 Sealing resin 101 frame 102 die pad 103 Hanging lead part 104 Lead part 105 Display Department 106 semiconductor device 107 adhesive 108 thin metal wire 109 sealing resin

フロントページの続き (56)参考文献 特開 平11−260989（ＪＰ，Ａ) 特開 平11−68034（ＪＰ，Ａ) 特開 平10−284676（ＪＰ，Ａ) 特開 平８−107178（ＪＰ，Ａ) 特開 平６−236942（ＪＰ，Ａ) 特開 平４−290439（ＪＰ，Ａ) 特開 平４−216659（ＪＰ，Ａ) 実開 昭60−27458（ＪＰ，Ｕ) (58)調査した分野(Int.Cl.7，ＤＢ名) H01L 23/50 H01L 25/04 H01L 25/18 Continuation of front page (56) Reference JP-A-11-260989 (JP, A) JP-A-11-68034 (JP, A) JP-A-10-284676 (JP, A) JP-A-8-107178 (JP , A) JP-A-6-236942 (JP, A) JP-A-4-290439 (JP, A) JP-A-4-216659 (JP, A) Actual development Sho-60-27458 (JP, U) (58) Fields investigated (Int.Cl. 7 , DB name) H01L 23/50 H01L 25/04 H01L 25/18

Claims (5)

(57)【特許請求の範囲】(57) [Claims] 【請求項１】 フレーム枠と、前記フレーム枠の開口領
域に設けられた放熱部材と、前記放熱部材の上面に設け
られた第１の半導体素子を支持する第１の支持部と、前
記放熱部材にその先端が対向し、末端が前記フレーム枠
に接続した複数のリード部と、前記放熱部材をその先端
部で支持し、末端が前記フレーム枠に接続した吊りリー
ド部と、前記吊りリード部に設けられ、第２の半導体素
子を支持する第２の支持部を有し、前記放熱部材上面は
前記リード部の下面よりも下方に配置され、前記吊りリ
ード部に設けられた第２の支持部の下面は前記リード部
の上面よりも上方に配置されていることを特徴とするリ
ードフレーム。1. A frame frame, a heat dissipation member provided in an opening region of the frame frame, a first support part for supporting a first semiconductor element provided on an upper surface of the heat dissipation member, and the heat dissipation member. A plurality of lead portions whose tips are opposed to each other and whose ends are connected to the frame, and a suspension lead portion which supports the heat dissipation member at its tip and whose ends are connected to the frame, and the suspension leads. A second support part provided on the suspension lead part, the second support part being provided and having a second support part for supporting the second semiconductor element, the upper surface of the heat dissipation member being disposed below the lower surface of the lead part. The lower surface of the lead frame is disposed above the upper surface of the lead portion. 【請求項２】 放熱部材は開口部を有していることを特
徴とする請求項１に記載のリードフレーム。2. The lead frame according to claim 1, wherein the heat dissipation member has an opening. 【請求項３】 放熱部材に設けられた第１の支持部は上
方に突出して設けられていることを特徴とする請求項１
に記載のリードフレーム。3. The first support portion provided on the heat dissipation member is provided so as to project upward.
Lead frame described in. 【請求項４】 放熱部材と、前記放熱部材の上面に設け
られ、第１の半導体素子を支持する第１の支持部と、前
記放熱部材にその先端が対向した複数のリード部と、前
記第１の半導体素子の電極と前記リード部とを電気的に
接続する金属細線と、前記放熱部材をその先端部で支持
した吊りリード部と、前記吊りリード部に設けられ、第
２の半導体素子を支持する第２の支持部と、前記第２の
半導体素子の電極と前記リード部とを電気的に接続する
金属細線と、前記第１の半導体素子、前記第２の半導体
素子および前記金属細線を封止する封止樹脂とを有し、
前記放熱部材上面は前記リード部の下面よりも下方に配
置され、前記吊りリード部に設けられた第２の支持部の
下面は前記リード部の上面よりも上方に配置されている
ことを特徴とする樹脂封止型半導体装置。 4. A heat dissipating member and an upper surface of the heat dissipating member.
A first supporting portion for supporting the first semiconductor element, and
A plurality of lead parts whose tips face the heat dissipation member,
The electrode of the first semiconductor element and the lead portion are electrically connected to each other.
Support the thin metal wire to be connected and the heat dissipation member at its tip
And the suspension lead portion provided on the suspension lead portion.
A second supporting portion for supporting the second semiconductor element;
Electrically connecting the electrode of the semiconductor element and the lead portion
Fine metal wire, the first semiconductor element, and the second semiconductor
An element and a sealing resin for sealing the thin metal wire,
The upper surface of the heat dissipation member is disposed below the lower surface of the lead portion.
Of the second supporting portion provided on the suspension lead portion.
The lower surface is arranged above the upper surface of the lead portion.
A resin-encapsulated semiconductor device characterized by the above. 【請求項５】 フレーム枠と、前記フレーム枠の開口領
域に設けられた放熱部材と、前記放熱部材上面に設けら
れた第１の半導体素子を支持する第１の支持部と、前記
放熱部材にその先端が対向し、末端が前記フレーム枠に
接続した複数のリード部と、前記放熱部材をその先端部
で支持し、末端が前記フレーム枠に接続した吊りリード
部と、前記吊りリード部に設けられ、第２の半導体素子
を支持する第２の支持部を有し、前記放熱部材上面は前
記リード部の下面よりも下方に配置され、前記吊りリー
ド部に設けられた第２の支持部の下面は前記リード部の
上面よりも上方に配置されているリードフレームを用意
する工程と、前記第１の支持部上に第１の半導体素子を
搭載する工程と、前記第１の半導体素子と前記複数のリ
ード部の一部のリード部とを金属細線で接続する工程
と、前記吊りリード部の第２の支持部上に第２の半導体
素子を搭載する工程と、前記第２の半導体素子と前記複
数のリード部の一部のリード部とを金属細線で接続する
工程と、少なくとも前記第１の半導体素子、第２の半導
体素子、金属細線、第１の支持部の上面、第２の支持
部、リード部を封止樹脂により封止する工程と、前記複
数のリード部の封止樹脂から突出した部分を成型してリ
ード成形する工程とよりなることを特徴とする樹脂封止
型半導体装置の製造方法。5. A frame frame, a heat dissipation member provided in an opening region of the frame frame, a first support portion for supporting a first semiconductor element provided on an upper surface of the heat dissipation member, and the heat dissipation member. A plurality of lead parts whose tips are opposed to each other and whose ends are connected to the frame, and a suspension lead part whose end supports the heat dissipation member and whose ends are connected to the frame, and which are provided on the suspension leads. A second supporting portion for supporting the second semiconductor element, the upper surface of the heat dissipation member being disposed below the lower surface of the lead portion, and the second supporting portion provided on the suspension lead portion. Preparing a lead frame whose lower surface is arranged above the upper surface of the lead section; mounting a first semiconductor element on the first supporting section; Some leads of multiple leads Connecting the lead portion with a thin metal wire, mounting the second semiconductor element on the second support portion of the suspension lead portion, and part of the second semiconductor element and the lead portions. Connecting the lead part with a metal thin wire, and at least the first semiconductor element, the second semiconductor element, the metal thin wire, the upper surface of the first support part, the second support part, and the lead part are sealed with resin. And a step of molding the portions of the plurality of lead portions protruding from the sealing resin to perform lead molding, the method of manufacturing a resin-sealed semiconductor device.
JP30215799A 1999-10-25 1999-10-25 Lead frame, resin-sealed semiconductor device using the same, and method of manufacturing the same Expired - Fee Related JP3528711B2 (en)

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JP4556732B2 (en) * 2005-03-28 2010-10-06 株式会社デンソー Semiconductor device and manufacturing method thereof
JP4767115B2 (en) * 2006-07-19 2011-09-07 パナソニック株式会社 Semiconductor device and manufacturing method thereof
WO2014013848A1 (en) * 2012-07-19 2014-01-23 日産自動車株式会社 Semiconductor device

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