JP3523277B2 - Residual metal melt solvent removal device - Google Patents
Residual metal melt solvent removal deviceInfo
- Publication number
- JP3523277B2 JP3523277B2 JP21924392A JP21924392A JP3523277B2 JP 3523277 B2 JP3523277 B2 JP 3523277B2 JP 21924392 A JP21924392 A JP 21924392A JP 21924392 A JP21924392 A JP 21924392A JP 3523277 B2 JP3523277 B2 JP 3523277B2
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- metal melt
- grinding
- hot water
- rotary table
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Grinding And Polishing Of Tertiary Curved Surfaces And Surfaces With Complex Shapes (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Description
【０００１】[0001]
【産業上の利用分野】本発明は、液相エピタキシャルウ
エハの製造に係り、特にウエハ外周研削方法とウエハに
残留する金属融液溶媒の除去に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to the manufacture of liquid phase epitaxial wafers, and more particularly to a method for grinding the outer periphery of a wafer and removal of a metal melt solvent remaining on the wafer.
【０００２】[0002]
【従来の技術】一般に、液相エピタキシャル成長後のウ
エハには、ウエハ周辺部及び表面に金属融液溶媒（Ｇａ
等）が残留する。残留した金属融液溶媒が格子欠陥など
の原因となるばかりか、ウエハ加工時において、ウエハ
割れの原因となることから、この残留した金属融液溶媒
を除去する必要がある。2. Description of the Related Art In general, a wafer after liquid phase epitaxial growth has a metal melt solvent (Ga) on its peripheral portion and surface.
Etc.) remains. The residual metal melt solvent not only causes lattice defects and the like, but also causes wafer cracking during wafer processing. Therefore, it is necessary to remove the residual metal melt solvent.
【０００３】この残留した金属融液溶媒の除去方法とし
て、従来、ウエハの外周部においては、ウエハをテーブ
ルにセットし、回転させながら純水を給水して回転砥石
による研削を行っていた。As a method of removing the residual metal melt solvent, conventionally, in the outer peripheral portion of the wafer, the wafer was set on a table and deionized water was supplied while rotating to perform grinding with a rotating grindstone.
【０００４】また、ウエハ上面においては、例えば塩酸
や水酸化ナトリウム溶液中に液相エピタキシャル成長後
のウエハを浸漬し、残留した金属融液溶媒を溶解させて
除去した後、ウエハの洗浄、乾燥を行っていた。On the upper surface of the wafer, the wafer after liquid phase epitaxial growth is immersed in, for example, hydrochloric acid or sodium hydroxide solution to dissolve and remove the residual metal melt solvent, and then the wafer is washed and dried. Was there.
【０００５】[0005]
【発明が解決しようとする課題】上記従来の方法では、
ウエハ外周部の残留した金属融液溶媒は砥石による研削
時切削水として純水を使用しているため、砥石に残留し
た金属融液溶媒が付着し、砥石の目詰まりをおこし、砥
石の寿命を短くしている。そのため研削時、ウエハ周辺
部に欠け、割れが発生する問題があった。SUMMARY OF THE INVENTION In the above conventional method,
The residual metal melt solvent on the wafer periphery uses pure water as cutting water when grinding with a grindstone. Making it short. For this reason, there is a problem that the peripheral portion of the wafer is chipped and cracked during grinding.
【０００６】また、砥石が目詰まりするため研削に必要
以上の時間を要していた。Further, since the grindstone is clogged, it takes more time than necessary for grinding.
【０００７】さらに、ウエハ表面に残留する金属融液溶
媒の除去においては、ウエハを塩酸などの溶液中に浸漬
させ残留する金属融液溶媒を除去し、その後ウエハを洗
浄、乾燥工程で仕上げを行っていたので複雑な作業を要
するとともに研削から乾燥までにかなりの時間を要して
いた。Further, in removing the metal melt solvent remaining on the wafer surface, the wafer is immersed in a solution of hydrochloric acid or the like to remove the remaining metal melt solvent, and then the wafer is cleaned and finished in a drying process. However, it required complicated work and required a considerable amount of time from grinding to drying.
【０００８】[0008]
【課題を解決するための手段】上記問題点を解決するた
めに、本発明の残留金属融液溶媒除去装置は、液相エピ
タキシャル成長後のウエハを載置し、ウエハを回転させ
るウエハ載置回転台と、このウエハ載置回転台上でウエ
ハの外周を研削する研削手段と、ウエハ載置回転台の上
方に設けられ、ウエハ研削終了後、ウエハに残留する金
属融液溶媒を溶解させて除去するための５０℃以上の温
水をウエハの被研削面に吹き付け供給する温水供給手段
と、この温水供給手段の作動時にウエハ載置回転台を高
速回転させ、次いで温水供給手段の作動を停止させた後
もウエハ載置回転台を高速回転させるべく、ウエハ載置
回転台の回転数を調整する回転数調整手段とを備えたも
のである。In order to solve the above problems, a residual metal melt solvent removal apparatus of the present invention is a wafer mounting rotary table for mounting a wafer after liquid phase epitaxial growth and rotating the wafer. And a grinding means for grinding the outer periphery of the wafer on the wafer mounting rotary table and a grinding means provided above the wafer mounting rotary table, and after the completion of the wafer grinding, the metal melt solvent remaining on the wafer is dissolved and removed. Temperature above 50 ℃ for
Hot water supply means for spraying water onto the surface to be ground of the wafer, and the wafer mounting rotary table is rotated at high speed when the hot water supplying means is operated, and then the wafer mounting rotary table is also stopped after the operation of the hot water supplying means is stopped. In order to rotate the wafer at a high speed, a rotation speed adjusting means for adjusting the rotation speed of the wafer mounting turntable is provided.
【０００９】なお、上記温水供給手段は、前記回転研削
手段の作動時は、シャワー状の５０℃以上の温水が、ま
た研削手段の非作動時は、ストレート状で水圧の高い５
０℃以上の温水が前記回転中のウエハに供給されるもの
とする。[0009] Incidentally, the hot water supply means, upon actuation of the rotating grinding means, a shower-like 50 ° C. or more hot water, also during non-operation of the grinding means, high pressure in a straight shape 5
0 ℃ or hot water is also of that Ru is supplied to the wafer in the rotational.
【００１０】また、前記ウエハ載置回転台の回転数を調
整する回転数調整手段を設け、該回転数調整手段による
回転台の回転数は、前記研削手段作動時の回転数より研
削手段非作動の回転数の方を高くするよう調整する。Further, the number of rotations of the wafer mounting turntable is adjusted.
The rotational speed adjusting means for integer provided, the rotational speed of the turntable by the rotational speed adjusting means adjusts to increase towards the rotational speed of the grinding means inoperative than the rotational speed of the front Symbol Grinding unit during operation.
【００１１】[0011]
【作用】ウエハ仕上げ時に５０℃以上の温水を使用して
いるのでウエハに付着した金属融液溶媒が溶解する。Since the hot water of 50 ° C. or higher is used at the time of finishing the wafer, the metal melt solvent adhered to the wafer is dissolved.
【００１２】ウエハ表面の溶媒は、ウエハを高速回転さ
せることによって遠心力で飛び散り、さらに表面に付着
した水滴も飛び散る。The solvent on the surface of the wafer is spattered by the centrifugal force when the wafer is rotated at a high speed, and the water droplets attached to the surface are also scattered.
【００１３】また、本発明の装置では一旦回転台にウエ
ハを固定すると最終工程の乾燥までウエハを取り外すこ
となく一連の工程で行うことができる。Further, in the apparatus of the present invention, once the wafer is fixed on the turntable, the final step of drying can be performed in a series of steps without removing the wafer.
【００１４】[0014]
【実施例】本発明の実施例について以下図面に基づいて
説明する。図１は本発明のウエハ仕上げ装置の一実施例
で図１（ａ）はウエハ外周を研削加工している略略断面
図である。液相エピタキシャルウエハ成長後は、図２の
如くウエハ１の外周及び表面上にウエハ成長工程中の金
属融液溶媒２が残留している。Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is an embodiment of the wafer finishing apparatus of the present invention, and FIG. 1 (a) is a schematic cross-sectional view of grinding the outer periphery of the wafer. After the liquid phase epitaxial wafer growth, the metal melt solvent 2 during the wafer growth process remains on the outer circumference and the surface of the wafer 1 as shown in FIG.
【００１５】そこでこの残留した前記溶媒２を除去する
ために、ウエハ１を図３の如くウエハチャックテーブル
３に固定する。固定されたウエハ１は回転軸４により回
転し、この回転しているウエハ１に回転軸５に装着され
た砥石６を回転させながら接することにより、ウエハ１
の外周に残留した溶媒２が研削される。Then, in order to remove the residual solvent 2, the wafer 1 is fixed to the wafer chuck table 3 as shown in FIG. The fixed wafer 1 is rotated by the rotating shaft 4, and the rotating wafer 5 is brought into contact with the rotating wafer 1 by rotating the grindstone 6 mounted on the rotating shaft 5.
The solvent 2 remaining on the outer periphery of is ground.
【００１６】なお、砥石６でウエハ１を研削中、研削水
として約５０℃以上のシャワー状の温水７をウエハ１上
面より供給することによって、溶媒２は溶解される。During the grinding of the wafer 1 with the grindstone 6, the solvent 2 is dissolved by supplying the shower-like warm water 7 of about 50 ° C. or more as grinding water from the upper surface of the wafer 1.
【００１７】上記工程でウエハ１の外周研削が終了する
と、図１（ｂ）の如く、ウエハ１より砥石６を離すとと
もに、回転軸４の回転数を高速回転（約１０００ｒ．
ｐ．ｍ以上）にし、さらに温水７ａをシャワー状からよ
り水圧を高くしてウエハ１表面にストレート状で吹き付
ける。その結果、表面に残留していた溶媒２は温水によ
ってより溶解されるとともに遠心力によって周囲に吹き
飛ばされる。When the outer peripheral grinding of the wafer 1 is completed in the above process, as shown in FIG. 1B, the grindstone 6 is separated from the wafer 1 and the rotational speed of the rotary shaft 4 is rotated at a high speed (about 1000 rpm.
p. m or more), and the hot water 7a is sprayed in a straight shape onto the surface of the wafer 1 by increasing the water pressure from the shower shape. As a result, the solvent 2 remaining on the surface is more dissolved by the warm water and blown off to the surroundings by the centrifugal force.
【００１８】上記工程を一定時間継続することによっ
て、ウエハ１表面の溶媒２は除去されることになるの
で、一定時間経過後、温水７の供給を停止させ、図１
（ｃ）の如くウエハ１だけ高速回転を継続させる。その
結果、ウエハ１の表面に付着していた水滴８が遠心力で
飛ばされ、ウエハ１の乾燥が行われる。Since the solvent 2 on the surface of the wafer 1 is removed by continuing the above process for a certain period of time, the supply of the hot water 7 is stopped after a certain period of time, and
As shown in (c), the high speed rotation of only the wafer 1 is continued. As a result, the water droplets 8 attached to the surface of the wafer 1 are blown off by the centrifugal force, and the wafer 1 is dried.
【００１９】以上のように本発明の仕上げ装置を用いる
ことによって、ウエハチヤックテーブル３にウエハ１を
固定すると、研削から乾燥までの一連の仕上げ工程が１
台の装置で行なえる。As described above, when the wafer 1 is fixed to the wafer chuck table 3 by using the finishing apparatus of the present invention, a series of finishing steps from grinding to drying are performed.
Can be done with a single device.
【００２０】なお、本実施例において溶解液として温水
を用いたが温水でなくても、ウエハ成長中に残留したＧ
ａなどの金属融液溶媒を溶解させる液であれば良い。但
し、薬品を使用した場合は、前記したように遠心力で水
滴を飛散させるだけでは、ウエハ表面から完全に薬品を
除去することはできない。しかし、その場合は、最終工
程の遠心力飛散工程の前に水洗工程を挿入するだけで十
分である。Although hot water was used as the dissolution liquid in the present embodiment, even if it is not hot water, the G remaining during the wafer growth
Any solution that dissolves a metal melt solvent such as a may be used. However, when chemicals are used, it is not possible to completely remove the chemicals from the wafer surface simply by scattering the water droplets by the centrifugal force as described above. However, in that case, it is sufficient to insert the washing step before the centrifugal force scattering step of the final step.
【００２１】また、温水の供給状態やウエハの回転数の
調整はそれぞれ調整手段を設けてあるので、ウエハの仕
上げに適した条件に調整することは容易に行えることは
言うまでもない。Further, since the adjusting means is provided for adjusting the supply state of the hot water and the rotating speed of the wafer, it is needless to say that it is easy to adjust the conditions suitable for the finishing of the wafer.
【００２２】[0022]
【発明の効果】本発明は、以上説明したように構成され
ているので、以下に記載されるような効果を奏する。成
長後のウエハ研削に温水等の溶解液を用いることによっ
て、ウエハに残留した金属融液溶媒は溶解されるので、
研削時の砥石の目詰まりをなくするとともにウエハの欠
け、割れを防止することができる。Since the present invention is constructed as described above, it has the following effects. By using a solution such as warm water for wafer grinding after growth, the metal melt solvent remaining on the wafer is dissolved.
It is possible to prevent the grinding stone from being clogged during grinding and prevent the wafer from being chipped or cracked.
【００２３】さらに、ウエハ表面に残留した溶媒はウエ
ハを高速回転させながら温水等の溶解液を吹き付けるこ
とにより遠心力で飛散して除去されるため、従来のよう
に溶液に浸漬し洗浄する工程が不要となる。Further, the solvent remaining on the surface of the wafer is scattered and removed by centrifugal force by spraying a solution such as warm water while rotating the wafer at a high speed. It becomes unnecessary.
【００２４】また上記において、温水等の溶解液の供給
を停止して、ウエハを高速回転させると、表面の水滴が
飛散し、ウエハが乾燥されるので特別な乾燥装置は不要
となる。Further, in the above, when the supply of the solution such as hot water is stopped and the wafer is rotated at a high speed, the water droplets on the surface are scattered and the wafer is dried, so that no special drying device is required.
【００２５】そして、本発明の装置は、ウエハを一旦ウ
エハチヤックテーブル等のウエハ載置回転台にセットす
ると乾燥終了まで着脱の必要はなく、一連の工程が連続
して一台の装置で行うことができるので、ウエハの仕上
げが短時間で行えるとともに、生産性が向上する。ま
た、非常に安価に仕上げ装置を提供することができる。In the apparatus of the present invention, once the wafer is set on the wafer mounting rotary table such as a wafer chuck table, it is not necessary to attach and detach until the drying is completed, and a series of steps can be continuously performed by one apparatus. Therefore, the wafer can be finished in a short time and the productivity is improved. Moreover, the finishing device can be provided at a very low cost.
【図１】本発明のウエハ仕上げ装置の一実施例で、
（ａ）は研削中の概略断面図である。（ｂ）はウエハ表
面の溶媒の飛散中の概略断面図である。（ｃ）はウエハ
の乾燥中の概略断面図である。FIG. 1 is an example of a wafer finishing apparatus of the present invention,
(A) is a schematic sectional view during grinding. (B) is a schematic sectional view of the surface of the wafer during the dispersion of the solvent. FIG. 3C is a schematic sectional view of the wafer during drying.
【図２】液相エピタキシャルウエハ成長後のウエハの概
略断面図である。FIG. 2 is a schematic cross-sectional view of a wafer after growing a liquid phase epitaxial wafer.
【図３】ウエハをウエハチヤックテーブルにセットした
概略断面図である。FIG. 3 is a schematic sectional view of a wafer set on a wafer chuck table.
１ 液相エビタキシャルウエハ ２ 金属融液溶媒 ３ ウエハチヤックテーブル ６ 砥石 ７ 温水 ８ 水滴 1 Liquid Phase Epitaxial Wafer 2 Metal melt solvent 3 Wafer chuck table 6 whetstone 7 hot water 8 water drops
Claims (2)
置し、ウエハを回転させるウエハ載置回転台と、このウ
エハ載置回転台上でウエハの外周を研削する研削手段
と、ウエハ載置回転台の上方に設けられ、ウエハ研削終
了後、ウエハに残留する金属融液溶媒を溶解させて除去
するための５０℃以上の温水をウエハの被研削面に吹き
付け供給する温水供給手段と、この温水供給手段の作動
時にウエハ載置回転台を高速回転させ、次いで温水供給
手段の作動を停止させた後もウエハ載置回転台を高速回
転させるべく、ウエハ載置回転台の回転数を調整する回
転数調整手段とを備えたことを特徴とする残留金属融液
溶媒除去装置。1. A wafer mounting rotary table on which a wafer after liquid phase epitaxial growth is mounted and which rotates the wafer, grinding means for grinding the outer periphery of the wafer on the wafer mounting rotary table, and a wafer mounting rotary table. And a hot water supply means for spraying hot water of 50 ° C. or higher on the surface to be ground of the wafer to dissolve and remove the metal melt solvent remaining on the wafer after the wafer is ground, and the hot water supply. Rotation speed for adjusting the number of rotations of the wafer mounting turntable so that the wafer mounting turntable is rotated at high speed when the means is operated, and then the wafer mounting turntable is rotated at high speed even after the operation of the hot water supply means is stopped. An apparatus for removing a residual metal melt solvent, comprising: an adjusting unit.
のウエハ載置回転台の回転数を、研削手段の作動時のウ
エハ載置回転台の回転数より高くしたことを特徴とする
請求項１記載の残留金属融液溶媒除去装置。2. The rotational speed adjusting means sets the rotational speed of the wafer mounting rotary table when the grinding means is not operating to be higher than the rotational speed of the wafer mounting rotary table when the grinding means is operating. The residual metal melt solvent removal device according to claim 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21924392A JP3523277B2 (en) | 1992-08-18 | 1992-08-18 | Residual metal melt solvent removal device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21924392A JP3523277B2 (en) | 1992-08-18 | 1992-08-18 | Residual metal melt solvent removal device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0669173A JPH0669173A (en) | 1994-03-11 |
| JP3523277B2 true JP3523277B2 (en) | 2004-04-26 |
Family
ID=16732466
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP21924392A Expired - Fee Related JP3523277B2 (en) | 1992-08-18 | 1992-08-18 | Residual metal melt solvent removal device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3523277B2 (en) |
-
1992
- 1992-08-18 JP JP21924392A patent/JP3523277B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0669173A (en) | 1994-03-11 |
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