JP3510430B2 - Thermoelectric converter - Google Patents
Thermoelectric converterInfo
- Publication number
- JP3510430B2 JP3510430B2 JP23439096A JP23439096A JP3510430B2 JP 3510430 B2 JP3510430 B2 JP 3510430B2 JP 23439096 A JP23439096 A JP 23439096A JP 23439096 A JP23439096 A JP 23439096A JP 3510430 B2 JP3510430 B2 JP 3510430B2
- Authority
- JP
- Japan
- Prior art keywords
- thermoelectric conversion
- conversion element
- element group
- heat absorption
- heat
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F25—REFRIGERATION OR COOLING; COMBINED HEATING AND REFRIGERATION SYSTEMS; HEAT PUMP SYSTEMS; MANUFACTURE OR STORAGE OF ICE; LIQUEFACTION SOLIDIFICATION OF GASES
- F25B—REFRIGERATION MACHINES, PLANTS OR SYSTEMS; COMBINED HEATING AND REFRIGERATION SYSTEMS; HEAT PUMP SYSTEMS
- F25B2321/00—Details of machines, plants or systems, using electric or magnetic effects
- F25B2321/02—Details of machines, plants or systems, using electric or magnetic effects using Peltier effects; using Nernst-Ettinghausen effects
- F25B2321/021—Control thereof
- F25B2321/0212—Control thereof of electric power, current or voltage
Landscapes
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、例えば冷蔵庫や冷
凍庫などに使用される熱電変換装置に係り、特に熱電変
換素子群を複数段に積層したカスケード構造を有する熱
電変換装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thermoelectric conversion device used in, for example, a refrigerator or a freezer, and more particularly to a thermoelectric conversion device having a cascade structure in which thermoelectric conversion element groups are stacked in a plurality of stages.
【０００２】[0002]
【従来の技術】例えば冷蔵庫などに使用する熱電変換装
置において、熱電変換素子の吸熱流Ｑａｂは素子自体の
熱電変換特性が決まれば、図１２に示すように素子に流
す電流値（電力）によって変化し、電流値を上げていく
とあるところで吸熱流の最大値Ｑａｂ（ｍａｘ）となる
電流条件Ｉ（ｍａｘ）が得られ、それ以上電流値を上げ
ても吸熱流はかえって減少する傾向がある。2. Description of the Related Art In a thermoelectric conversion device used in, for example, a refrigerator, the endothermic flow Qab of a thermoelectric conversion element changes depending on the current value (electric power) supplied to the element as shown in FIG. However, when the current value is increased, the current condition I (max) that gives the maximum value Qab (max) of the endothermic flow is obtained at a certain point, and even if the current value is further increased, the endothermic flow tends to decrease rather.
【０００３】そして熱電変換素子の吸熱流Ｑａｂと素子
の両端につく温度差ΔＴは、図１３に示すようにほぼ反
比例の関係にある。つまり、熱電変換素子の熱電変換特
性、素子形状、素子数などが一定の場合、つまり特定の
熱電変換素子を使用して吸熱流を設定したときには、熱
電変換素子の吸熱側と放熱側の温度差ΔＴは一義的に決
まる。The heat absorption flow Qab of the thermoelectric conversion element and the temperature difference ΔT at both ends of the element are in an inversely proportional relationship as shown in FIG. That is, when the thermoelectric conversion characteristics, the element shape, the number of elements, etc. of the thermoelectric conversion element are constant, that is, when the heat absorption flow is set using a specific thermoelectric conversion element, the temperature difference between the heat absorption side and the heat radiation side of the thermoelectric conversion element. ΔT is uniquely determined.
【０００４】そのため例えば冷蔵や冷凍などの用途で温
度差ΔＴを大きくつけ、しかもある程度の吸熱能力を維
持するため、従来より図１４に示すように熱電変換素子
を複数段重ねたカスケード構造が採用されている。Therefore, in order to increase the temperature difference ΔT in applications such as refrigeration and freezing, and to maintain a certain amount of heat absorption capability, a cascade structure in which a plurality of thermoelectric conversion elements are stacked is conventionally employed as shown in FIG. ing.
【０００５】図１５〜図１７は従来のカスケード構造を
有する熱電変換装置の概略構成図で、図中の５１は上段
の熱電変換素子群、５２は下段の熱電変換素子群、５３
ａは吸熱側基板、５３ｂは放熱側基板、５４は電極、５
５は電源、５６は上段の熱電変換素子群５１と下段の熱
電変換素子群５２を電気的に接続するリード体である。15 to 17 are schematic configuration diagrams of a conventional thermoelectric conversion device having a cascade structure. In the figures, 51 is an upper thermoelectric conversion element group, 52 is a lower thermoelectric conversion element group, and 53.
a is a heat absorption side substrate, 53b is a heat radiation side substrate, 54 is an electrode, 5
Reference numeral 5 is a power source, and reference numeral 56 is a lead body for electrically connecting the upper thermoelectric conversion element group 51 and the lower thermoelectric conversion element group 52.
【０００６】図１５のタイプは、上段の熱電変換素子群
５１と下段の熱電変換素子群５２は同じ大きさの熱電変
換素子を使用して、同じ間隔で配置され、上段の熱電変
換素子群５１の個数が下段の熱電変換素子群５２の約１
／３前後と少なく、従って吸熱側基板５３ａの大きさは
放熱側基板５３ｂよりも小さい。In the type shown in FIG. 15, the upper thermoelectric conversion element group 51 and the lower thermoelectric conversion element group 52 are arranged at the same intervals by using thermoelectric conversion elements of the same size, and the upper thermoelectric conversion element group 51 is arranged. Is about 1 of the thermoelectric conversion element group 52 in the lower stage.
The size of the heat absorption side substrate 53a is smaller than that of the heat radiation side substrate 53b.
【０００７】図１６のタイプは、基本的には前記図１５
のタイプと同じであるが、上段の熱電変換素子群５１の
間隔を大きくとって分散配置され、従って吸熱側基板５
３ａの大きさも放熱側基板５３ｂとほぼ同じである。The type shown in FIG. 16 is basically the same as that shown in FIG.
The type of the heat absorbing side substrate 5 is the same as that of the heat absorbing side substrate 5
The size of 3a is almost the same as that of the heat dissipation side substrate 53b.
【０００８】図１７のタイプは、上段の熱電変換素子群
５１の大きさを下段の熱電変換素子５２より細くして、
素子数は上下同数にしている。In the type shown in FIG. 17, the size of the upper thermoelectric conversion element group 51 is made smaller than that of the lower thermoelectric conversion element 52,
The number of elements is the same vertically.
【０００９】なお、図１５ないし図１７のものは、全て
単一の電源５５を使用しており、この電源５５で上段の
熱電変換素子群５１と下段の熱電変換素子群５２の両方
を駆動していた。All of FIGS. 15 to 17 use a single power source 55, and this power source 55 drives both the upper thermoelectric conversion element group 51 and the lower thermoelectric conversion element group 52. Was there.
【００１０】[0010]
【発明が解決しようとする課題】ところで前記従来の熱
電変換装置は、所望の吸熱量（温度差ΔＴ）を得るため
に大きな投入消費電力が必要であり、そのためにランニ
ングコストが高くつくという欠点を有している。本発明
者らはこの点について種々検討した結果、上下段の熱電
変換素子群を直列に接続して同じ電流値で駆動している
ことに起因していることを見出した。By the way, the conventional thermoelectric conversion device requires a large amount of input power consumption in order to obtain a desired heat absorption amount (temperature difference ΔT), which results in a high running cost. Have As a result of various studies on this point, the present inventors have found that this is due to the fact that the upper and lower thermoelectric conversion element groups are connected in series and driven at the same current value.
【００１１】本発明は、このような従来技術の欠点を解
消し、性能的に優れ、投入消費電力が少なくてランニン
グコストの低い熱電変換装置を提供することを目的とす
るものである。An object of the present invention is to solve the above-mentioned drawbacks of the prior art and to provide a thermoelectric conversion device which is excellent in performance, consumes less power, and has a low running cost.
【００１２】[0012]
【課題を解決するための手段】前記目的を達成するた
め、第１の本発明は、Ｐ型半導体チップならびにＮ型半
導体チップと電極とを備えて、その電極によって直列に
接続された熱電変換素子群を複数段に積層したカスケー
ド構造を有する熱電変換装置において、前記熱電変換素
子群が吸熱側熱電変換素子群と放熱側熱電変換素子群を
有し、前記吸熱側熱電変換素子群に吸熱側電源が接続さ
れ、前記放熱側熱電変換素子群に放熱側電源が接続され
て、放熱側熱電変換素子群に流れる電流密度が吸熱側熱
電変換素子群に流れる電流密度よりも大になるように前
記吸熱側電源と放熱側電源により吸熱側熱電変換素子群
と放熱側熱電変換素子群が個別に駆動されることを特徴
とするものである。第２の本発明は、Ｐ型半導体チップ
ならびにＮ型半導体チップと電極とを備えて、その電極
によって直列に接続された熱電変換素子群を複数段に積
層したカスケード構造を有する熱電変換装置において、
前記熱電変換素子群が吸熱側熱電変換素子群と放熱側熱
電変換素子群を有し、前記吸熱側熱電変換素子群ならび
に放熱側熱電変換素子群にそれぞれ接続される２出力が
可能な１つの電源を設け、放熱側熱電変換素子群に流れ
る電流密度が吸熱側熱電変換素子群に流れる電流密度よ
りも大になるように前記２出力が可能な１つの電源によ
り吸熱側熱電変換素子群と放熱側熱電変換素子群が個別
に駆動されることを特徴とするものである。第３の本発
明は、Ｐ型半導体チップならびにＮ型半導体チップと電
極とを備えて、その電極によって直列に接続された熱電
変換素子群を複数段に積層したカスケード構造を有する
熱電変換装置において、前記熱電変換素子群が吸熱側熱
電変換素子群と放熱側熱電変換素子群を有し、前記吸熱
側熱電変換素子群ならびに放熱側熱電変換素子群にそれ
ぞれ接続される電源を設け、前記吸熱側熱電変換素子群
とそれに接続される電源の出力との間に抵抗が挿入され
て、放熱側熱電変換素子群に流れる電流密度が吸熱側熱
電変換素子群に流れる電流密度よりも大になるように前
記電源により吸熱側熱電変換素子群と放熱側熱電変換素
子群が個別に駆動されることを特徴とするものである。In order to achieve the above object, the first aspect of the present invention provides a P-type semiconductor chip and an N-type semiconductor chip.
It is equipped with a conductor chip and electrodes, and is connected in series by the electrodes.
In a thermoelectric conversion device having a cascade structure in which connected thermoelectric conversion element groups are stacked in a plurality of stages, the thermoelectric conversion element group has a heat absorption side thermoelectric conversion element group and a heat radiation side thermoelectric conversion element group, and the heat absorption side thermoelectric conversion The heat absorption side power source is connected to the element group, the heat radiation side power source is connected to the heat radiation side thermoelectric conversion element group, and the current density flowing in the heat radiation side thermoelectric conversion element group is higher than the current density flowing in the heat absorption side thermoelectric conversion element group. As described above, the heat absorption side power source and the heat radiation side power source individually drive the heat absorption side thermoelectric conversion element group and the heat radiation side thermoelectric conversion element group. The second invention is a P-type semiconductor chip.
And an electrode including an N-type semiconductor chip and an electrode
In a thermoelectric conversion device having a cascade structure in which a plurality of thermoelectric conversion element groups connected in series by
The thermoelectric conversion element group has a heat absorption side thermoelectric conversion element group and a heat radiation side thermoelectric conversion element group, and one power source capable of two outputs respectively connected to the heat absorption side thermoelectric conversion element group and the heat radiation side thermoelectric conversion element group And a heat-absorbing side thermoelectric conversion element group and a heat-radiating side are provided by one power source capable of the two outputs so that the current density flowing through the heat-dissipating side thermoelectric conversion element group becomes higher than the current density flowing through the heat-absorbing side thermoelectric conversion element group. The thermoelectric conversion element groups are individually driven. A third aspect of the present invention relates to a P-type semiconductor chip and an N-type semiconductor chip
In a thermoelectric conversion device having a cascade structure in which a plurality of thermoelectric conversion element groups connected in series by electrodes are laminated, the thermoelectric conversion element group includes a heat absorption side thermoelectric conversion element group and a heat radiation side thermoelectric conversion. A power supply connected to the heat absorption side thermoelectric conversion element group and the heat radiation side thermoelectric conversion element group is provided, and a resistance is provided between the heat absorption side thermoelectric conversion element group and the output of the power supply connected thereto. The heat-absorbing-side thermoelectric conversion element group and the heat-radiating-side thermoelectric conversion element group are individually inserted by the power source so that the current density flowing through the heat-radiating side thermoelectric conversion element group becomes larger than the current density flowing through the heat-absorption side thermoelectric conversion element group. It is characterized by being driven to.
【００１３】[0013]
【発明の実施の形態】本発明は前述したように、熱電変
換素子群を複数段に積層したカスケード構造を有する熱
電変換装置において、各段の熱電変換素子群に供給する
電流密度が異なるように構成することにより、各段の熱
電変換素子群に応じてその機能を十分に発揮することが
できる。そのため性能的に優れ、投入消費電力が少なく
てランニングコストの低い熱電変換装置を提供すること
が可能となる。BEST MODE FOR CARRYING OUT THE INVENTION As described above, in the present invention, in a thermoelectric conversion device having a cascade structure in which thermoelectric conversion element groups are stacked in a plurality of stages, the current density supplied to each stage of the thermoelectric conversion element groups is different. With the configuration, the function can be sufficiently exhibited depending on the thermoelectric conversion element group at each stage. Therefore, it is possible to provide a thermoelectric conversion device that is excellent in performance, has low input power consumption, and low running cost.
【００１４】次に本発明の実施の形態を図とともに説明
する。図１は、本発明の具体例１における熱電変換装置
の概略構成図である。Next, an embodiment of the present invention will be described with reference to the drawings. FIG. 1 is a schematic configuration diagram of a thermoelectric conversion device in Example 1 of the present invention.
【００１５】図中の１は吸熱側基板、２は上段吸熱側電
極、３はＰ型半導体チップならびにＮ型半導体チップか
らなる吸熱側熱電変換素子群、４は上段放熱側電極、５
は中間基板、６は下段吸熱側電極、７はＰ型半導体チッ
プならびにＮ型半導体チップからなる放熱側熱電変換素
子群、８は下段放熱側電極、９は放熱側基板である。前
記基板１，５，９は、例えば表面にアルマイト薄膜を形
成したアルミニウムやアルミナセラミックなどから構成
されている。In the figure, 1 is a heat absorption side substrate, 2 is an upper heat absorption side electrode, 3 is a heat absorption side thermoelectric conversion element group consisting of P-type semiconductor chips and N-type semiconductor chips, 4 is an upper heat radiation side electrode, 5
Is an intermediate substrate, 6 is a lower heat absorption side electrode, 7 is a heat radiation side thermoelectric conversion element group including P-type semiconductor chips and N type semiconductor chips, 8 is a lower heat radiation side electrode, and 9 is a heat radiation side substrate. The substrates 1, 5 and 9 are made of, for example, aluminum or alumina ceramic having an alumite thin film formed on the surface thereof.
【００１６】この図に示すように中間基板５を介して２
段のカスケード構造になっており、この具体例も以下に
述べる他の具体例も、吸熱側熱電変換素子群３と放熱側
熱電変換素子群７のチップの寸法ならびに使用個数が同
一になっている。As shown in FIG.
It has a cascaded structure of stages, and in this specific example and other specific examples described below, the size and the number of chips of the heat absorption side thermoelectric conversion element group 3 and the heat radiation side thermoelectric conversion element group 7 are the same. .
【００１７】本具体例の場合、電源１０が吸熱側電源１
０ａと放熱側電源１０ｂに分かれており、吸熱側電源１
０ａにより吸熱側熱電変換素子群３が電流密度Ｉ1 （例
えば９３Ａ／ｃｍ2 ）で、放熱側電源１０ｂにより放熱
側熱電変換素子群７が電流密度Ｉ2 （例えば２００Ａ／
ｃｍ2 ）で、それぞれ個別に駆動され、放熱側の電流密
度Ｉ2 の方が吸熱側の電流密度Ｉ1 よりも大きく設定さ
れている（Ｉ2 ＞Ｉ1）。In the case of this example, the power source 10 is the heat absorption side power source 1.
0a and heat radiation side power source 10b, and heat absorption side power source 1
0a, the heat absorption side thermoelectric conversion element group 3 has a current density I1 (eg 93 A / cm2), and the heat radiation side power supply 10b causes the heat radiation side thermoelectric conversion element group 7 to have a current density I2 (eg 200 A / cm2)
The current density I2 on the heat radiation side is set to be larger than the current density I1 on the heat absorption side (I2> I1).
【００１８】図２は、本発明に係る熱電変換装置と従来
のものの特性を比較して示す図である。すなわち本発明
に係る熱電変換装置の吸熱側熱電変換素子群と放熱側熱
電変換素子群は同一の半導体チップを同数使用し、すな
わち吸熱段と放熱段のチップ数の比を１：１とし、吸熱
側熱電変換素子群に対して９３Ａ／ｃｍ2 の電流密度に
なるように電流を流し、個別の電源を使用して放熱側熱
電変換素子群に対しては２００Ａ／ｃｍ2 の電流密度に
なるように電流を流した。FIG. 2 is a diagram showing a comparison between the characteristics of the thermoelectric conversion device according to the present invention and the conventional one. That is, the heat absorption side thermoelectric conversion element group and the heat radiation side thermoelectric conversion element group of the thermoelectric conversion device according to the present invention use the same number of the same semiconductor chips, that is, the ratio of the number of chips at the heat absorption stage to that at the heat radiation stage is 1: 1. A current is supplied to the side thermoelectric conversion element group so that the current density is 93 A / cm2, and a current is supplied to the heat radiation side thermoelectric conversion element group using an individual power source so that the current density is 200 A / cm2. Shed.
【００１９】一方、比較例としての従来の熱電変換装置
は、吸熱側熱電変換素子群として前記本発明に係る熱電
変換装置と同一の半導体チップを同数使用し、放熱側熱
電変換素子群は吸熱側の３倍、すなわち吸熱段と放熱段
のチップ数の比を１：３とし、吸熱側熱電変換素子群と
放熱側熱電変換素子群を直列に接続し、２００Ａ／ｃｍ
2 の電流密度になるように電流を流した。On the other hand, the conventional thermoelectric conversion device as a comparative example uses the same number of semiconductor chips as the thermoelectric conversion device group according to the present invention as the heat absorption side thermoelectric conversion device group, and the heat radiation side thermoelectric conversion device group has the heat absorption side. 3 times, that is, the ratio of the number of chips in the heat absorption stage and the number of chips in the heat radiation stage is 1: 3, the heat absorption side thermoelectric conversion element group and the heat radiation side thermoelectric conversion element group are connected in series, and 200 A / cm
The current was applied so that the current density was 2.
【００２０】そしてこの両熱電変換装置の各温度差ΔＴ
とＣＯＰとの関係を図２に示した。図中の線Ａは本発明
に係る熱電変換装置、線Ｂは従来の熱電変換装置の特性
を示す線で、この図から明らかなように同じ温度差ΔＴ
であると本発明に係る熱電変換装置の方がＣＯＰが高
く、このことは本発明に係る熱電変換装置の方が熱電変
換特性に優れていることを示す。言い換えれば、投入消
費電力が少なくても所望の温度差を得ることができ、結
局、ランニングコストの低減が図れる。The temperature difference ΔT between the two thermoelectric converters
The relationship between COP and COP is shown in FIG. Line A in the figure is a line showing the characteristics of the thermoelectric conversion device according to the present invention, and line B is a line showing the characteristics of the conventional thermoelectric conversion device.
Then, the thermoelectric conversion device according to the present invention has a higher COP, which means that the thermoelectric conversion device according to the present invention has superior thermoelectric conversion characteristics. In other words, it is possible to obtain a desired temperature difference even if the input power consumption is small, and eventually the running cost can be reduced.
【００２１】図３は、本発明に係る熱電変換装置におい
て上下に同一寸法の熱電変換素子（１．４ｍｍ角で高さ
１．６ｍｍ）を使用した場合の上下の素子数の比を放熱
段（下段）素子数／吸熱段（上段）素子数で表し、単位
面積当たり同一吸熱量（温度差６０℃で８．７Ｗ）を得
るための熱電変換装置への投入消費電力（縦軸）と前記
素子数の比（横軸）との関係を示す特性図である。なお
図中の点線は、従来の熱電変換装置（放熱段素子数／吸
熱段素子数＝３）の投入消費電力（８５Ｗ）のラインで
ある。FIG. 3 shows the ratio of the numbers of upper and lower elements when the thermoelectric conversion elements (1.4 mm square and height 1.6 mm) having the same size are used in the thermoelectric conversion device according to the present invention. Power consumption to the thermoelectric conversion device (vertical axis) for obtaining the same heat absorption amount per unit area (8.7 W at a temperature difference of 60 ° C.) and the number of elements (lower stage) / heat absorption stage (upper stage) It is a characteristic view which shows the relationship with the number ratio (horizontal axis). The dotted line in the figure is the input power consumption (85 W) of the conventional thermoelectric conversion device (the number of heat radiating stage elements / the number of heat absorbing stage elements = 3).
【００２２】この図から明らかなように同じ吸熱量を得
ようとしたとき、放熱段素子数／吸熱段素子数の値、す
なわち吸熱側熱電変換素子群のトータル断面積（Ｓｃ）
に対する放熱側熱電変換素子群のトータル断面積（Ｓ
ｈ）の比率（Ｓｈ）／（Ｓｃ）を調整することで投入消
費電力が変わり、特に放熱段素子数／吸熱段素子数の値
〔（Ｓｈ）／（Ｓｃ）〕が０．８〜１．９の範囲では投
入電力は８０Ｗ未満で済み、好ましくは０．９〜１．
８、さらに好ましくは１〜１．４の範囲に規制すると投
入電力の低減効果がさらに高くなる。As is clear from this figure, when the same amount of heat absorption is to be obtained, the value of the number of heat radiating stage elements / the number of heat absorbing stage elements, that is, the total cross-sectional area (Sc) of the heat absorbing side thermoelectric conversion element group
The total cross-sectional area (S
The input power consumption is changed by adjusting the ratio (Sh) / (Sc) of (h), and in particular, the value [(Sh) / (Sc)] of the number of heat radiating stage elements / the number of heat absorbing stage elements is 0.8 to 1. In the range of 9, the input power is less than 80 W, preferably 0.9-1.
If it is regulated within the range of 8, and more preferably within the range of 1 to 1.4, the effect of reducing the input power is further enhanced.
【００２３】図４は本発明の具体例２に係る熱電変換装
置の概略構成図で、前記具体例１と相違する点は、電流
密度が異なる２出力が可能な電源１０を用いた点であ
る。FIG. 4 is a schematic configuration diagram of a thermoelectric conversion device according to a second embodiment of the present invention. The difference from the first embodiment is that a power source 10 capable of two outputs having different current densities is used. .
【００２４】図５は本発明の具体例３に係る熱電変換装
置の概略構成図で、前記具体例２と相違する点は、電源
供給回路の途中に抵抗Ｒ（固定抵抗または可変抵抗）を
挿入した点である。FIG. 5 is a schematic configuration diagram of a thermoelectric conversion device according to a third embodiment of the present invention. The difference from the second embodiment is that a resistor R (fixed resistor or variable resistor) is inserted in the middle of the power supply circuit. That is the point.
【００２５】図６は本発明の具体例４に係る熱電変換装
置の概略構成図で、前記具体例１と相違する点は、放熱
側熱電変換素子群７または（ならびに）吸熱側熱電変換
素子群３（本具体例では放熱側熱電変換素子群７のみ）
を複数に分割して、分割した熱電変換素子群どうしを並
列に接続成した点である。FIG. 6 is a schematic configuration diagram of a thermoelectric conversion device according to a fourth embodiment of the present invention. The difference from the first embodiment is that the heat dissipation side thermoelectric conversion element group 7 or (and the heat absorption side thermoelectric conversion element group). 3 (in this specific example, only the radiation side thermoelectric conversion element group 7)
Is divided into a plurality, and the divided thermoelectric conversion element groups are connected in parallel.
【００２６】図７は本発明の具体例５に係る熱電変換装
置の概略構成図で、前記具体例１と相違する点は、カス
ケード構造を有する複数の熱電変換装置を使用し、吸熱
側熱電変換素子群３または放熱側熱電変換素子群７（本
具体例では吸熱側熱電変換素子群３）を直列に接続し、
放熱側熱電変換素子群７または吸熱側熱電変換素子群３
（本具体例では放熱側熱電変換素子群７）を並列に接続
した点である。FIG. 7 is a schematic block diagram of a thermoelectric conversion device according to a fifth embodiment of the present invention. The difference from the first embodiment is that a plurality of thermoelectric conversion devices having a cascade structure are used and the heat absorption side thermoelectric conversion is performed. The element group 3 or the heat radiation side thermoelectric conversion element group 7 (in this specific example, the heat absorption side thermoelectric conversion element group 3) is connected in series,
Radiation side thermoelectric conversion element group 7 or heat absorption side thermoelectric conversion element group 3
The point is that the heat-radiating side thermoelectric conversion element group 7 in this example is connected in parallel.
【００２７】図８は本発明の具体例６に係る熱電変換装
置の概略構成図で、吸熱側熱電変換素子群３または放熱
側熱電変換素子群７（本具体例では吸熱側熱電変換素子
群３）に、基板を使用しないスケルトンタンプ熱電変換
素子を使用した例である。FIG. 8 is a schematic configuration diagram of a thermoelectric conversion device according to a sixth embodiment of the present invention. The heat absorption side thermoelectric conversion element group 3 or the heat radiation side thermoelectric conversion element group 7 (in this specific example, the heat absorption side thermoelectric conversion element group 3). ) Is an example of using a skeleton tamper thermoelectric conversion element that does not use a substrate.
【００２８】図９は本発明の具体例７に係る熱電変換装
置の概略構成図で、吸熱側熱電変換素子群３と放熱側熱
電変換素子群７に、基板を使用しないスケルトンタンプ
熱電変換素子を使用した例である。FIG. 9 is a schematic configuration diagram of a thermoelectric conversion device according to a seventh embodiment of the present invention. In the heat absorption side thermoelectric conversion element group 3 and the heat radiation side thermoelectric conversion element group 7, a skeleton tamper thermoelectric conversion element that does not use a substrate is provided. This is an example of use.
【００２９】図１０は本発明の具体例８に係る熱電変換
装置の概略構成図で、上下両面に基板を有する同一の熱
電変換素子群を重ね合わせてスケルトン構造にした例で
ある。FIG. 10 is a schematic configuration diagram of a thermoelectric conversion device according to Example 8 of the present invention, which is an example in which the same thermoelectric conversion element group having substrates on both upper and lower surfaces is superposed to form a skeleton structure.
【００３０】図１１は本発明の具体例９に係る熱電変換
装置の概略構成図で、放熱側熱電変換素子群７のチップ
の高さが吸熱側熱電変換素子群３のチップの高さよりも
低いものを使用した例である。FIG. 11 is a schematic configuration diagram of a thermoelectric conversion device according to Example 9 of the present invention, in which the chip height of the heat radiation side thermoelectric conversion element group 7 is lower than the chip height of the heat absorption side thermoelectric conversion element group 3. It is an example of using a thing.
【００３１】なお、具体例２〜９においても、前記
〔（Ｓｈ）／（Ｓｃ）〕は０．８〜１．９の範囲、好ま
しくは０．９〜１．８、さらに好ましくは１〜１．４の
範囲に規制され、さらに放熱側の電流密度Ｉ2 の方が吸
熱側の電流密度Ｉ1 よりも大きく設定されている（Ｉ2
＞Ｉ1 ）。Also in specific examples 2 to 9, the above [(Sh) / (Sc)] is in the range of 0.8 to 1.9, preferably 0.9 to 1.8, and more preferably 1-1. The current density I2 on the heat radiation side is set to be larger than the current density I1 on the heat absorption side (I2
> I1).
【００３２】前記実施の形態で述べたように、各段に用
いる熱電変換素子が同一の寸法であったりまたその使用
個数が同一であると、各段の熱電変換素子群が製造し易
く、量産に適している。As described in the above embodiment, if the thermoelectric conversion elements used in each stage have the same size or the number of used thermoelectric conversion elements is the same, it is easy to manufacture the thermoelectric conversion element group in each stage and mass production is performed. Suitable for
【００３３】各具体例では２段のカスケード構造を示し
たが、本発明はこれに限定されるものではなく、３段以
上のカスケード構造にも適用可能である。この場合、各
段に供給する電流密度をそれぞれ個別に異ならしめるこ
ともできるし、また、例えば吸熱側の熱電変換素子群と
中間段の熱電変換素子群は同じ電流密度で、放熱側の熱
電変換素子群はそれらよりも大きい電流密度にしたり、
あるいは中間段の熱電変換素子群と放熱側の熱電変換素
子群の電流密度を吸熱側の熱電変換素子群へ供給する電
流密度よりも大きくすることも可能である。Although each specific example shows a two-stage cascade structure, the present invention is not limited to this, and is applicable to a cascade structure of three or more stages. In this case, the current densities supplied to the respective stages can be made different from each other, and, for example, the thermoelectric conversion element group on the heat absorption side and the thermoelectric conversion element group on the intermediate stage have the same current density, and the thermoelectric conversion elements on the heat radiation side are The device group may have a higher current density than those,
Alternatively, the current densities of the thermoelectric conversion element group on the intermediate stage and the thermoelectric conversion element group on the heat radiation side can be made higher than the current density supplied to the thermoelectric conversion element group on the heat absorption side.
【００３４】前記実施の形態では熱電変換装置を電子冷
却に使用する場合について説明したが、本発明はこれに
限定されるものではなく、熱電変換装置を電子加熱また
は電子冷却と電子加熱が兼用できるものにも適用可能で
ある。In the above embodiment, the case where the thermoelectric conversion device is used for electronic cooling has been described, but the present invention is not limited to this, and the thermoelectric conversion device can be used for electronic heating or electronic cooling and electronic heating. It can also be applied to things.
【００３５】[0035]
【発明の効果】本発明は前述したように、熱電変換素子
群を複数段に積層したカスケード構造を有する熱電変換
装置において、各段の熱電変換素子群に流れる電流密度
が異なるように構成することにより、各段の熱電変換素
子群に応じてその機能を十分に発揮することができる。
そのため性能的に優れ、投入消費電力が少なくてランニ
ングコストの低い熱電変換装置を提供することが可能と
なる。As described above, the present invention provides a thermoelectric conversion device having a cascade structure in which a plurality of thermoelectric conversion element groups are stacked, and the current density flowing in each stage of the thermoelectric conversion element groups is increased.
By configuring so that they are different from each other, the function can be sufficiently exerted depending on the thermoelectric conversion element group at each stage.
Therefore, it is possible to provide a thermoelectric conversion device that is excellent in performance, has low input power consumption, and low running cost.
【図１】本発明の具体例１に係る熱電変換装置の概略構
成図である。FIG. 1 is a schematic configuration diagram of a thermoelectric conversion device according to a first example of the present invention.
【図２】本発明に係る熱電変換装置と従来のものの、Ｃ
ＯＰと温度差との関係を示す特性図である。FIG. 2 shows a thermoelectric conversion device according to the present invention and a conventional one, which are C
It is a characteristic view which shows the relationship between OP and a temperature difference.
【図３】放熱段素子数／吸熱段素子数の値と投入消費電
力の関係を示す特性図である。FIG. 3 is a characteristic diagram showing the relationship between the value of the number of heat radiating stage elements / the number of heat absorbing stage elements and the input power consumption.
【図４】本発明の具体例２に係る熱電変換装置の概略構
成図である。FIG. 4 is a schematic configuration diagram of a thermoelectric conversion device according to a second specific example of the present invention.
【図５】本発明の具体例３に係る熱電変換装置の概略構
成図である。FIG. 5 is a schematic configuration diagram of a thermoelectric conversion device according to specific example 3 of the present invention.
【図６】本発明の具体例４に係る熱電変換装置の概略構
成図である。FIG. 6 is a schematic configuration diagram of a thermoelectric conversion device according to specific example 4 of the present invention.
【図７】本発明の具体例５に係る熱電変換装置の概略構
成図である。FIG. 7 is a schematic configuration diagram of a thermoelectric conversion device according to specific example 5 of the present invention.
【図８】本発明の具体例６に係る熱電変換装置の概略構
成図である。FIG. 8 is a schematic configuration diagram of a thermoelectric conversion device according to specific example 6 of the present invention.
【図９】本発明の具体例７に係る熱電変換装置の概略構
成図である。FIG. 9 is a schematic configuration diagram of a thermoelectric conversion device according to specific example 7 of the present invention.
【図１０】本発明の具体例８に係る熱電変換装置の概略
構成図である。FIG. 10 is a schematic configuration diagram of a thermoelectric conversion device according to specific example 8 of the present invention.
【図１１】本発明の具体例９に係る熱電変換装置の概略
構成図である。FIG. 11 is a schematic configuration diagram of a thermoelectric conversion device according to specific example 9 of the present invention.
【図１２】熱電変換装置へ供給する電流値と吸熱量との
関係を示す特性図である。FIG. 12 is a characteristic diagram showing a relationship between a current value supplied to a thermoelectric conversion device and a heat absorption amount.
【図１３】吸熱量と温度差との関係を示す特性図であ
る。FIG. 13 is a characteristic diagram showing a relationship between a heat absorption amount and a temperature difference.
【図１４】カスケード構造を有する熱電変換装置の特長
を説明するための図である。FIG. 14 is a diagram for explaining the features of a thermoelectric conversion device having a cascade structure.
【図１５】従来の熱電変換装置の１例を示す概略構成図
である。FIG. 15 is a schematic configuration diagram showing an example of a conventional thermoelectric conversion device.
【図１６】従来の熱電変換装置の他の例を示す概略構成
図である。FIG. 16 is a schematic configuration diagram showing another example of a conventional thermoelectric conversion device.
【図１７】従来の熱電変換装置のさらに他の例を示す概
略構成図である。FIG. 17 is a schematic configuration diagram showing still another example of a conventional thermoelectric conversion device.
１ 吸熱側基板 ２ 上段吸熱側電極 ３ 吸熱側熱電変換素子群 ４ 上段放熱側電極 ５ 中間基板 ６ 下段吸熱側電極 ７ 放熱側熱電変換素子群 ８ 下段放熱側電極 ９ 放熱側基板 １０ 電源 １０ａ 吸熱側電源 １０ｂ 放熱側電源 1 Heat absorption side substrate 2 Upper heat absorbing side electrode 3 Heat absorption side thermoelectric conversion element group 4 Upper radiating side electrode 5 Intermediate board 6 Lower heat absorption side electrode 7 Radiation side thermoelectric conversion element group 8 Lower heat dissipation side electrode 9 Heat dissipation side substrate 10 power supplies 10a Heat absorption side power supply 10b Radiating side power supply
───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 平８−236820（ＪＰ，Ａ) ─────────────────────────────────────────────────── ─── Continued front page (56) Reference JP-A-8-236820 (JP, A)
Claims (11)
ップと電極とを備えて、その電極によって直列に接続さ
れた熱電変換素子群を複数段に積層したカスケード構造
を有する熱電変換装置において、前記熱電変換素子群が
吸熱側熱電変換素子群と放熱側熱電変換素子群を有し、
前記吸熱側熱電変換素子群に吸熱側電源が接続され、前
記放熱側熱電変換素子群に放熱側電源が接続されて、放
熱側熱電変換素子群に流れる電流密度が吸熱側熱電変換
素子群に流れる電流密度よりも大になるように前記吸熱
側電源と放熱側電源により吸熱側熱電変換素子群と放熱
側熱電変換素子群が個別に駆動されることを特徴とする
熱電変換装置。1. A P-type semiconductor chip and an N-type semiconductor chip.
And an electrode and connected in series by the electrode.
In a thermoelectric conversion device having a cascade structure in which the thermoelectric conversion element group is laminated in a plurality of stages, the thermoelectric conversion element group has a heat absorption side thermoelectric conversion element group and a heat radiation side thermoelectric conversion element group,
A heat absorption side power source is connected to the heat absorption side thermoelectric conversion element group, a heat radiation side power source is connected to the heat radiation side thermoelectric conversion element group, and a current density flowing in the heat radiation side thermoelectric conversion element group flows in the heat absorption side thermoelectric conversion element group. A thermoelectric conversion device characterized in that the heat absorption side power source and the heat radiation side power source individually drive the heat absorption side thermoelectric conversion element group and the heat radiation side thermoelectric conversion element group so as to be higher than the current density.
ップと電極とを備えて、その電極によって直列に接続さ
れた熱電変換素子群を複数段に積層したカスケード構造
を有する熱電変換装置において、前記熱電変換素子群が
吸熱側熱電変換素子群と放熱側熱電変換素子群を有し、
前記吸熱側熱電変換素子群ならびに放熱側熱電変換素子
群にそれぞれ接続される２出力が可能な１つの電源を設
け、放熱側熱電変換素子群に流れる電流密度が吸熱側熱
電変換素子群に流れる電流密度よりも大になるように前
記２出力が可能な１つの電源により吸熱側熱電変換素子
群と放熱側熱電変換素子群が個別に駆動されることを特
徴とする熱電変換装置。2. A P-type semiconductor chip and an N-type semiconductor chip
And an electrode and connected in series by the electrode.
In a thermoelectric conversion device having a cascade structure in which the thermoelectric conversion element group is laminated in a plurality of stages, the thermoelectric conversion element group has a heat absorption side thermoelectric conversion element group and a heat radiation side thermoelectric conversion element group,
A single power source capable of two outputs, which is connected to the heat absorption side thermoelectric conversion element group and the heat radiation side thermoelectric conversion element group, is provided, and the current density flowing in the heat radiation side thermoelectric conversion element group is the current flowing in the heat absorption side thermoelectric conversion element group. A thermoelectric conversion device, wherein the heat-absorption-side thermoelectric conversion element group and the heat-radiation-side thermoelectric conversion element group are individually driven by one power source capable of the two outputs so as to be higher than the density.
ップと電極とを備えて、その電極によって直列に接続さ
れた熱電変換素子群を複数段に積層したカスケード構造
を有する熱電変換装置において、前記熱電変換素子群が
吸熱側熱電変換素子群と放熱側熱電変換素子群を有し、
前記吸熱側熱電変換素子群ならびに放熱側熱電変換素子
群にそれぞれ接続される電源を設け、前記吸熱側熱電変
換素子群とそれに接続される電源の出力との間に抵抗が
挿入されて、放熱側熱電変換素子群に流れる電流密度が
吸熱側熱電変換素子群に流れる電流密度よりも大になる
ように前記電源により吸熱側熱電変換素子群と放熱側熱
電変換素子群が個別に駆動されることを特徴とする熱電
変換装置。3. A P-type semiconductor chip and an N-type semiconductor chip
And an electrode and connected in series by the electrode.
In a thermoelectric conversion device having a cascade structure in which the thermoelectric conversion element group is laminated in a plurality of stages, the thermoelectric conversion element group has a heat absorption side thermoelectric conversion element group and a heat radiation side thermoelectric conversion element group,
A power source connected to each of the heat absorption side thermoelectric conversion element group and the heat radiation side thermoelectric conversion element group is provided, and a resistance is inserted between the heat absorption side thermoelectric conversion element group and the output of the power source connected thereto, and the heat radiation side The heat absorption side thermoelectric conversion element group and the heat radiation side thermoelectric conversion element group are individually driven by the power source so that the current density flowing in the thermoelectric conversion element group becomes higher than the current density flowing in the heat absorption side thermoelectric conversion element group. Characteristic thermoelectric conversion device.
て、前記吸熱側熱電変換素子群のトータル断面積（Ｓ
ｃ）に対する放熱側熱電変換素子群のトータル断面積
（Ｓｈ）の比率（Ｓｈ）／（Ｓｃ）が、０．８〜１．９
の範囲に規制されていることを特徴とする熱電変換装
置。4. The total cross-sectional area (S) of the heat absorption side thermoelectric conversion element group according to any one of claims 1 to 3.
The ratio (Sh) / (Sc) of the total cross-sectional area (Sh) of the heat radiation side thermoelectric conversion element group to c) is 0.8 to 1.9.
A thermoelectric conversion device characterized by being regulated within the range.
て、前記各段に用いる熱電変換素子が同一の寸法を有し
ていることを特徴とする熱電変換装置。5. The thermoelectric conversion device according to claim 1 , wherein the thermoelectric conversion elements used in each of the stages have the same dimensions.
る熱電変換素子の数が同一であることを特徴とする熱電
変換装置。6. The thermoelectric conversion device according to claim 5, wherein the number of thermoelectric conversion elements used in each of the stages is the same.
熱側熱電変換素子群または（ならびに）放熱側熱電変換
素子群が複数のグループに分割され、各分割熱電変換素
子群が電源との間で並列接続されていることを特徴とす
る熱電変換装置。 7. The heat absorption side thermoelectric conversion element group or (and) the heat radiation side thermoelectric conversion element group is divided into a plurality of groups according to claim 1 or 2 , and each divided thermoelectric conversion element group is connected to a power source. A thermoelectric conversion device, which is connected in parallel.
スケード構造を有する熱電変換装置が複数設けられ、そ
の複数の熱電変換装置の吸熱側熱電変換素子群どうしが
直列に接続されていることを特徴とする熱電変換装置。 8. The method of claim 1 or 2, characterized in that the thermoelectric conversion device having a cascade structure is provided with a plurality of, endothermic-side thermoelectric conversion element group each other of the plurality of thermoelectric conversion devices are connected in series And a thermoelectric converter.
スケード構造を有する熱電変換装置が複数設けられ、そ
の複数の熱電変換装置の吸熱側熱電変換素子群どうしが
並列に接続されていることを特徴とする熱電変換装置。 9. The method of claim 1 or 2, wherein the thermoelectric conversion device having a cascade structure is provided with a plurality, characterized in that the heat absorption side thermoelectric conversion element group each other of the plurality of thermoelectric conversion devices are connected in parallel And a thermoelectric converter.
カスケード構造を有する熱電変換装置が複数設けられ、
その複数の熱電変換装置の放熱側熱電変換素子群どうし
が直列に接続されていることを特徴とする熱電変換装
置。 10. The method of claim 1, wherein the thermoelectric conversion device is provided with a plurality having the cascade structure,
A thermoelectric conversion device in which the heat radiation side thermoelectric conversion element groups of the plurality of thermoelectric conversion devices are connected in series.
カスケード構造を有する熱電変換装置が複数設けられ、
その複数の熱電変換装置の放熱側熱電変換素子群どうし
が並列に接続されていることを特徴とする熱電変換装
置。 11. The method of claim 1, wherein the thermoelectric conversion device is provided with a plurality having the cascade structure,
A thermoelectric conversion device, wherein the heat dissipation side thermoelectric conversion element groups of the plurality of thermoelectric conversion devices are connected in parallel.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23439096A JP3510430B2 (en) | 1996-09-04 | 1996-09-04 | Thermoelectric converter |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23439096A JP3510430B2 (en) | 1996-09-04 | 1996-09-04 | Thermoelectric converter |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH1079532A JPH1079532A (en) | 1998-03-24 |
| JP3510430B2 true JP3510430B2 (en) | 2004-03-29 |
Family
ID=16970256
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23439096A Expired - Fee Related JP3510430B2 (en) | 1996-09-04 | 1996-09-04 | Thermoelectric converter |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3510430B2 (en) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2005001946A1 (en) * | 2003-06-30 | 2005-01-06 | Da Vinci Co., Ltd. | Peltier element and production method therefor |
| JP4622577B2 (en) * | 2005-02-23 | 2011-02-02 | 株式会社Ｉｈｉ | Cascade module for thermoelectric conversion |
| JP5532688B2 (en) * | 2009-06-04 | 2014-06-25 | 富士通株式会社 | Interposer, semiconductor device and electronic device |
| JP4770973B2 (en) * | 2009-09-25 | 2011-09-14 | ダイキン工業株式会社 | Heat exchanger |
| CN102356305A (en) | 2010-05-27 | 2012-02-15 | 松下电器产业株式会社 | Thermoelectric conversion device, radiation detector, and radiation detection method using same |
| KR101047478B1 (en) * | 2011-02-08 | 2011-07-07 | 한국기계연구원 | Method for manufacturing thermoelectric module and thermoelectric module using the same |
| CN104115294B (en) * | 2012-02-27 | 2016-11-23 | Kelk株式会社 | Electrothermal module, thermoelectric generating device and thermoelectric generator |
| JP6859257B2 (en) * | 2014-10-09 | 2021-04-14 | コンソルツィオ デルタ ティ リサーチ | 3D integrated thermoelectric generator operating in an out-of-plane heat flux configuration with internal voids and heat conduction path adjustment vias |
| CN109065698A (en) * | 2018-08-16 | 2018-12-21 | 东北大学 | Using the two-stage semiconductor thermoelectric module of optimal thermoelectric arm height |
| KR102436204B1 (en) * | 2021-02-18 | 2022-08-25 | 최병규 | Appratus for testing semiconductor device |
-
1996
- 1996-09-04 JP JP23439096A patent/JP3510430B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH1079532A (en) | 1998-03-24 |
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