JP3509835B2 - Method for manufacturing metal support plate of resin-sealed electronic component - Google Patents
Method for manufacturing metal support plate of resin-sealed electronic componentInfo
- Publication number
- JP3509835B2 JP3509835B2 JP17412196A JP17412196A JP3509835B2 JP 3509835 B2 JP3509835 B2 JP 3509835B2 JP 17412196 A JP17412196 A JP 17412196A JP 17412196 A JP17412196 A JP 17412196A JP 3509835 B2 JP3509835 B2 JP 3509835B2
- Authority
- JP
- Japan
- Prior art keywords
- support plate
- metal support
- groove
- pressing member
- resin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Forging (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Description
【発明の詳細な説明】
【０００１】
【産業上の利用分野】本発明は樹脂封止型半導体装置等
の電子装置において樹脂封止体で被覆される金属支持板
の製造方法に関する。
【０００２】
【従来の技術】半導体装置として図１に示すように放熱
性の良い金属支持板１の上に半導体素子２を固着し、こ
れ等を樹脂封止体３で被覆した構成の樹脂封止型半導体
装置は公知である。この種の半導体装置において金属支
持板１と樹脂封止体３との結合強度を高めるために金属
支持板１の表面に溝４を形成することがある。
【０００３】
【発明が解決しようとする課題】ところで、放熱機能及
び支持機能を有する金属支持板１と樹脂封止体３との結
合強度を高めるために溝４を入口が奥よりも狭いあり溝
即ちばち形溝とすることが望ましい。しかし、このよう
な形状の溝４を切削加工で形成すると必然的にコストが
高くなる。
【０００４】そこで、本発明は金属支持板に入口が奥よ
りも狭い溝を容易に形成することができる方法を提供す
ることを目的とする。
【０００５】
【課題を解決するための手段】上記目的を達成するため
の本発明は、回路素子と、この回路素子を支持する金属
支持板と、前記回路素子及び前記金属支持板を被覆する
樹脂封止体とを備えた樹脂封止型電子部品における前記
金属支持板を製造する方法であって、互いに対向する対
の壁面が前記金属支持板の一方の主面に対して直角に延
びている形状の溝を前記金属支持板の一方の主面に形成
する第１の工程と、前記溝の幅（Ｗ1）よりも広い幅
（Ｗ2）の先端面を有し且つ前記金属支持板よりも硬い
材料から成る押圧部材を用意し、前記押圧部材を前記溝
に位置決めし、前記押圧部材によって前記金属支持板の
前記溝の両縁近傍を押圧して、前記押圧部材の先端の形
状に対応した凹部を形成すると共に、前記凹部の底面に
あり溝を形成する第２の工程とを備えていることを特徴
とする金属支持板の製造方法に係わるものである。な
お、本発明において、前記回路素子は半導体素子、抵
抗、コンデンサ、ＩＣチップ、回路基板装置等の種々の
回路部品又は回路装置を意味し、また電子部品は、電気
装置で使用される能動部品、受動部品、トランジスタ、
サイリスタ等の半導体部品のみでなく、半導体回路装
置、集積回路装置等のあらゆる電気装置も意味する
【０００６】
【発明の作用及び効果】本発明の第１の工程で形成する
溝は金属支持板の主面に対して直角に延びる壁面を有す
るものであるので、容易に形成することができる。また
第２の工程は溝の幅W1よりも広い幅W2の先端面を有する
押圧部材によって押圧する単純な工程であるので、作業
性が良い。従って、凹部とこの凹部の底面のあり溝とか
ら成る２段構造の溝を容易且つ低コストに製造すること
ができる。
【０００７】
【実施例】次に、図２〜図９を参照して本発明の実施例
に係わる樹脂封止型半導体装置及びその製造方法を説明
する。まず、樹脂封止型半導体装置に使用するための金
属支持板１０を用意し、この金属支持板１０を支持台１
１の上に載置し、金属支持板１０の一方の主面１２の上
にパンチング工具又は打印のおす型とも呼ぶことができ
る第１及び第２の押圧部材１３、１４を配置し、加圧装
置（図示せず）によって押圧部材１３、１４を金属支持
板１０の一方の主面１２に押し当てる。即ち、一般にパ
ンチ加工と呼ばれている方法で目的とする溝形状に対応
する押圧部材１３、１４を金属支持板１０に打ち込み、
しかる後離脱させる。これにより、図３に示す第１及び
第２の溝１５、１６が金属支持板１０に形成される。第
１及び第２の溝１５、１６は主面１２に対して直角即ち
垂直に延びている一対の壁面１７、１８及び１９、２０
を有する凹状溝であり、金属支持板１０の一方の端から
他方の端まで長手に延びている。なお、押圧部材１３、
１４は金属支持板１０よりも硬度又は剛性の高い材料か
ら成るので、押圧部材１３、１４でパンチングすると、
金属支持板１０に塑性変形が生じ、溝１５、１６が得ら
れる。
【０００８】次に、図４に示すように第２の溝１６の幅
Ｗ1 よりも広い幅Ｗ2 の先端面を有する第３の押圧部材
２１を第２の溝１６の上に位置決めし、第３の押圧部材
２１によって第２の溝１６の両縁近傍を押圧する。これ
により、図５に示すように第３の押圧部材２１の形状に
対応した凹部２２が形成され、この凹部２２の底面にあ
り溝２３が形成され、２段構造の溝１６ａが生じる。
【０００９】次に、図６に示すように金属支持板１０の
他方の主面２４に対向させて第４の押圧部材（パンチン
グ部材又は打印部材）２５を配置し、且つ金属支持板１
０の一方の主面１２に受け部材２６を配置し、この受け
部材２６で金属支持板１０を支持する。第４の押圧部材
２５は、金属支持板１０の一方の主面１２における第１
の溝１５の一方の壁面１７に隣接している領域１２ａに
対向するように位置決めされる。なお、図６では図２〜
図５との関係を明かにするための第４の押圧部材２５が
金属支持板１０の下側に配置されているが、図６におい
て全ての部分の上下関係を逆にして金属支持板１０の上
側に第４の押圧部材２５を配置することができる。
【００１０】次に、図６に示すように配置された第４の
押圧部材１０によって金属支持板１０の他方の主面２４
を押圧即ち打印又はパンチングする。これにより、図７
に示すように第４の押圧部材２５が金属支持板１０の他
方の主面２４に食い込み、段部２７が形成され、金属支
持板１０に肉薄部分２８が生じると共に第１の溝１５の
一方の壁面１７の上方が内側に押し出され、傾斜壁面１
７ａが生じ、入口の幅が奥の幅よりも狭い変形あり溝１
７ａが生じる。即ち、第４の押圧部材２５で金属支持板
１０を押圧することによって塑性変形が生じ、段部２７
及び変形あり溝１７ａが生じる。図８に示すように２つ
の溝１５ａ、１６ａは金属支持板１０の一方の主面１２
の一方の縁から他方の縁に至るように互いに平行に直線
状に延びている。
【００１１】図７及び図８に示す金属支持板１０を使用
して樹脂封止型半導体装置を組立てる時には、図９に示
すように金属支持板１０の一方の主面にトランジスタチ
ップ、ＩＣチップ等の半導体素子２９を周知のダイボン
ディング法で固着し、次に周知のワイヤボンディング法
で半導体素子２９と外部リード（図示せず）とを内部リ
ード（図示せず）によって接続し、エポキシ樹脂等の樹
脂封止体３０によって半導体素子２９、及び金属支持板
１０及び内部リードを被覆する。なお、樹脂封止体３０
は周知のトランスファモールド法等で形成する。この
時、電気絶縁性を高めるために金属支持板１０の一方の
主面１２のみでなく他方の主面２４も樹脂封止体３０で
被覆する。樹脂封止体３０は溝１５ａ、１６ａ及び段部
２７の中にも入り込むため、樹脂封止体３０と金属支持
板１０との噛み合いが生じ、大きな結合強度が得られ
る。
【００１２】上述から明らかなように本実施例は次の利
点を有する。
（イ） おす型としての押圧部材１３、１４、２１、２
５による押圧操作即ちパンチング又は打印によってあり
溝１５ａ、１６ａ及び段部２７を形成するので、これ等
を容易に形成することができる。
（ロ） ２つの溝１５ａ、１６ａの他に段部２７も設け
られているので、樹脂封止体３と金属支持板１０とが強
固に結合される。
【００１３】
【変形例】本発明は上述の実施例に限定されるものでな
く、例えば次の変形が可能なものである。
（１） 図３に示すように第１及び第２の溝１５、１６
を形成した金属支持板１０を用意し、次に図１０に示す
幅広の押圧部材２５ａによって金属支持板１０の他方の
主面２４を押圧することができる。この場合、押圧部材
２５ａの右端を２つの溝１５、１６の間にまで広げるこ
とによって第１の溝１５はクサビ形溝１５ｂに変形さ
れ、第２の溝１５は一方の壁面が傾斜した変形あり溝１
６ｂに変形される。
（２） 図１１に示すように中間に段部を有する対の壁
面を備えた第１、第２及び第３の溝３１、３２、３３を
金属支持板１０に設けたものを用意し、押圧部材２５ｂ
によって金属支持板１０の下側主面２４の左端領域を押
圧して図１２に示すように段部２７を形成すると共に第
１の溝３１の左側壁面３４、３５を傾斜させ、入口の幅
を奥の幅よりも狭くすることができる。なお、図１１に
おいて第１、第２及び第３の溝３１、３２、３３はいず
れも２段溝であり、奥に形成された凹部の入口の幅ａ、
ｂ、ｃはこの順番に狭くなるようにａ＞ｂ＞ｃに設定さ
れている。図１２では３つの溝３１、３２、３３と１つ
の段部２７を有するので、樹脂封止体に対する金属支持
板１０の結合強度が極めて大きくなる。（３）
半導体装置に限ることなく、これに類似の電子
装置にも本発明を適用することができる。Description: BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a metal support plate covered with a resin sealing body in an electronic device such as a resin sealing type semiconductor device. 2. Description of the Related Art As shown in FIG. 1, a semiconductor device 2 having a structure in which a semiconductor element 2 is fixed on a metal support plate 1 having good heat dissipation and covered with a resin sealing body 3 as shown in FIG. Stop type semiconductor devices are known. In this type of semiconductor device, a groove 4 may be formed on the surface of the metal support plate 1 in order to increase the bonding strength between the metal support plate 1 and the resin sealing body 3. [0003] Incidentally, in order to increase the bonding strength between the metal support plate 1 having a heat dissipation function and a support function and the resin sealing body 3, the groove 4 has a narrower entrance than the depth. That is, it is desirable to have a bee-shaped groove. However, if the groove 4 having such a shape is formed by cutting, the cost is inevitably increased. Accordingly, an object of the present invention is to provide a method capable of easily forming a groove having an entrance narrower than a depth in a metal support plate. In order to achieve the above object, the present invention provides a circuit element, a metal support plate for supporting the circuit element, and a resin for covering the circuit element and the metal support plate. A method of manufacturing the metal support plate in a resin-sealed electronic component having a sealing body, wherein a pair of wall surfaces facing each other extends at right angles to one main surface of the metal support plate. A first step of forming a groove having a shape on one main surface of the metal support plate, and a tip end surface having a width (W2) wider than the width (W1) of the groove and being harder than the metal support plate. A pressing member made of a material is prepared, the pressing member is positioned in the groove, and the pressing member presses the vicinity of both edges of the groove of the metal support plate, thereby forming a recess corresponding to the shape of the tip of the pressing member. And forming a groove on the bottom surface of the concave portion. Those relating to the manufacturing method of the metal support plate, characterized in that it comprises a second step of forming. In the present invention, the circuit element means various circuit components or circuit devices such as a semiconductor device, a resistor, a capacitor, an IC chip, and a circuit board device, and the electronic component is an active component used in an electric device. Passive components, transistors,
This means not only semiconductor components such as thyristors but also all electric devices such as semiconductor circuit devices and integrated circuit devices. [0006] The groove formed in the first step of the present invention is formed on the metal support plate. Since it has a wall surface extending at right angles to the main surface, it can be easily formed. In addition, the second step is a simple step of pressing with a pressing member having a tip end surface having a width W2 larger than the width W1 of the groove, so that workability is good. Therefore, there are recesses and grooves on the bottom of the recesses.
Thus, the groove having a two-stage structure can be manufactured easily and at low cost. Next, a resin-sealed semiconductor device and a method of manufacturing the same according to an embodiment of the present invention will be described with reference to FIGS. First, a metal support plate 10 for use in a resin-encapsulated semiconductor device is prepared, and the metal support plate 10 is
1 and second pressing members 13 and 14 which can be called punching tools or stamping dies are placed on one main surface 12 of the metal support plate 10 and pressurized. The pressing members 13 and 14 are pressed against one main surface 12 of the metal support plate 10 by an apparatus (not shown). That is, the pressing members 13 and 14 corresponding to the desired groove shape are driven into the metal support plate 10 by a method generally called punching,
Then remove. Thus, the first and second grooves 15 and 16 shown in FIG. The first and second grooves 15, 16 are formed by a pair of wall surfaces 17, 18, 19, 20 extending at right angles or perpendicular to the main surface 12.
And extends longitudinally from one end of the metal support plate 10 to the other end. The pressing member 13,
Since 14 is made of a material having higher hardness or rigidity than the metal support plate 10, when punching with the pressing members 13 and 14,
Plastic deformation occurs in the metal support plate 10, and grooves 15 and 16 are obtained. Next, as shown in FIG. 4, a third pressing member 21 having a distal end surface having a width W2 wider than the width W1 of the second groove 16 is positioned on the second groove 16, and The pressing members 21 press the vicinity of both edges of the second groove 16. As a result, as shown in FIG. 5, a concave portion 22 corresponding to the shape of the third pressing member 21 is formed, a groove 23 is formed on the bottom surface of the concave portion 22, and a two-stage groove 16a is formed. Next, as shown in FIG. 6, a fourth pressing member (a punching member or a stamping member) 25 is arranged so as to face the other main surface 24 of the metal supporting plate 10 and
A receiving member 26 is disposed on one main surface 12 of the first supporting member 10, and the metal supporting plate 10 is supported by the receiving member 26. The fourth pressing member 25 is provided on the first main surface 12 of the metal support plate 10.
The groove 15 is positioned so as to face a region 12 a adjacent to one wall surface 17 of the groove 15. In FIG. 6, FIGS.
A fourth pressing member 25 for clarifying the relationship with FIG. 5 is arranged below the metal support plate 10, but in FIG. The fourth pressing member 25 can be arranged on the upper side. Next, the fourth main pressing member 10 arranged as shown in FIG.
Is pressed or stamped or punched. As a result, FIG.
As shown in (4), the fourth pressing member 25 cuts into the other main surface 24 of the metal support plate 10 to form a step portion 27, a thin portion 28 is formed on the metal support plate 10, and one of the first grooves 15 is formed. The upper side of the wall 17 is pushed inward, and the inclined wall 1
7a, the width of the inlet is smaller than the width of the back, and there is a deformation groove 1
7a results. That is, when the metal support plate 10 is pressed by the fourth pressing member 25, plastic deformation occurs, and the step portion 27 is pressed.
And a groove 17a with deformation. As shown in FIG. 8, the two grooves 15a and 16a are provided on one main surface 12 of the metal support plate 10.
Extend from one edge to the other edge in a straight line parallel to each other. When assembling a resin-encapsulated semiconductor device using the metal support plate 10 shown in FIGS. 7 and 8, a transistor chip, an IC chip, or the like is mounted on one main surface of the metal support plate 10 as shown in FIG. Semiconductor element 29 is fixed by a known die bonding method, and then the semiconductor element 29 is connected to an external lead (not shown) by an internal lead (not shown) by a known wire bonding method. The semiconductor element 29, the metal support plate 10, and the internal leads are covered with the resin sealing body 30. In addition, the resin sealing body 30
Is formed by a known transfer molding method or the like. At this time, not only one main surface 12 of the metal support plate 10 but also the other main surface 24 are covered with the resin sealing body 30 in order to enhance the electrical insulation. Since the resin sealing body 30 also enters the grooves 15a, 16a and the step 27, the resin sealing body 30 and the metal support plate 10 are engaged with each other, so that a large bonding strength can be obtained. As apparent from the above, the present embodiment has the following advantages. (B) Pressing members 13, 14, 21, 2 as male molds
Since the grooves 15a, 16a and the step 27 are formed by the pressing operation by 5, ie, punching or stamping, these can be easily formed. (B) Since the step 27 is provided in addition to the two grooves 15a and 16a, the resin sealing body 3 and the metal support plate 10 are firmly connected. [Modifications] The present invention is not limited to the above-described embodiment, and for example, the following modifications are possible. (1) First and second grooves 15, 16 as shown in FIG.
Is prepared, and then the other main surface 24 of the metal support plate 10 can be pressed by the wide pressing member 25a shown in FIG. In this case, the first groove 15 is deformed into a wedge-shaped groove 15b by expanding the right end of the pressing member 25a between the two grooves 15 and 16, and the second groove 15 has a deformation in which one wall surface is inclined. Groove 1
6b. (2) As shown in FIG. 11, a metal support plate 10 having first, second, and third grooves 31, 32, and 33 having a pair of wall surfaces having a step portion in the middle is prepared and pressed. Member 25b
By pressing the left end area of the lower main surface 24 of the metal support plate 10 to form the step 27 as shown in FIG. 12, the left side walls 34 and 35 of the first groove 31 are inclined to reduce the width of the entrance. It can be narrower than the width at the back. In FIG. 11, the first, second, and third grooves 31, 32, and 33 are all two-step grooves, and the width a of the entrance of the recess formed in the back,
b> c are set to be a>b> c so as to become narrower in this order. In FIG. 12, since three grooves 31, 32, 33 and one step 27 are provided, the bonding strength of the metal support plate 10 to the resin sealing body is extremely large. (3) The present invention is applicable not only to semiconductor devices but also to similar electronic devices.
【図面の簡単な説明】
【図１】従来の樹脂封止型半導体装置を示す断面図であ
る。
【図２】本発明の実施例に従う樹脂封止型半導体装置に
使用する金属支持板及び溝を形成する装置を示す断面図
である。
【図３】金属支持板に第１段階の溝を形成した状態を示
す断面図である。
【図４】第２の溝を変形させる方法を説明するための断
面図である。
【図５】第２の溝が変形された金属支持板を示す断面図
である。
【図６】第１の溝を変形させる方法を説明するための断
面図である。
【図７】あり溝が形成された金属支持板を示す断面図で
ある。
【図８】図７の金属支持板の平面図である。
【図９】完成した樹脂封止型半導体装置を示す断面図で
ある。
【図１０】変形例の金属支持板及び押圧部材を示す断面
図である。
【図１１】別の変形例の金属支持板と押圧部材を示す断
面図である。
【図１２】図１１の第１の溝を変形した金属支持板を示
す断面図である。
【符号の説明】
１０ 金属支持板
１５ａ 第１の溝
１６ａ 第２の溝
２９ 半導体素子
３０ 樹脂封止体BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a sectional view showing a conventional resin-encapsulated semiconductor device. FIG. 2 is a sectional view showing an apparatus for forming a metal support plate and a groove used in a resin-sealed semiconductor device according to an embodiment of the present invention. FIG. 3 is a cross-sectional view showing a state where a first-stage groove is formed in a metal support plate. FIG. 4 is a cross-sectional view for explaining a method of deforming a second groove. FIG. 5 is a cross-sectional view showing a metal support plate in which a second groove is deformed. FIG. 6 is a cross-sectional view for explaining a method of deforming a first groove. FIG. 7 is a cross-sectional view showing a metal support plate in which a dovetail groove is formed. FIG. 8 is a plan view of the metal support plate of FIG. 7; FIG. 9 is a sectional view showing a completed resin-sealed semiconductor device. FIG. 10 is a cross-sectional view illustrating a metal support plate and a pressing member according to a modification. FIG. 11 is a sectional view showing a metal support plate and a pressing member according to another modification. FIG. 12 is a cross-sectional view showing a metal support plate in which the first groove of FIG. 11 is deformed. [Description of Signs] 10 Metal support plate 15a First groove 16a Second groove 29 Semiconductor element 30 Resin sealing body
フロントページの続き (58)調査した分野(Int.Cl.7，ＤＢ名) B21J 1/00 - 13/14 B21J 17/00 - 19/04 B21K 1/00 - 31/00 B21D 31/00 B21D 22/00 - 26/14 Continuation of the front page (58) Field surveyed (Int. Cl. 7 , DB name) B21J 1/00-13/14 B21J 17/00-19/04 B21K 1/00-31/00 B21D 31/00 B21D 22 / 00-26/14
Claims (1)
属支持板と、前記回路素子及び前記金属支持板を被覆す
る樹脂封止体とを備えた樹脂封止型電子部品における前
記金属支持板を製造する方法であって、 互いに対向する対の壁面が前記金属支持板の一方の主面
に対して直角に延びている形状の溝を前記金属支持板の
一方の主面に形成する第１の工程と、 前記溝の幅（Ｗ1）よりも広い幅（Ｗ2）の先端面を有し
且つ前記金属支持板よりも硬い材料から成る押圧部材を
用意し、前記押圧部材を前記溝に位置決めし、前記押圧
部材によって前記金属支持板の前記溝の両縁近傍を押圧
して、前記押圧部材の先端の形状に対応した凹部を形成
すると共に、前記凹部の底面にあり溝を形成する第２の
工程とを備えていることを特徴とする金属支持板の製造
方法。Claims: 1. A resin seal comprising a circuit element, a metal support plate for supporting the circuit element, and a resin sealing body for covering the circuit element and the metal support plate. A method of manufacturing the metal support plate in a stationary electronic component, wherein a pair of mutually opposing wall surfaces has a groove extending perpendicular to one main surface of the metal support plate. A first step of forming on one main surface; and a pressing member having a tip end surface having a width (W2) wider than the width (W1) of the groove and made of a material harder than the metal support plate is prepared. Positioning the pressing member in the groove, pressing the metal support plate near both edges of the groove by the pressing member to form a recess corresponding to the shape of the tip of the pressing member, and the bottom surface of the recess And a second step of forming a groove. The method of manufacturing a metal support plate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17412196A JP3509835B2 (en) | 1996-06-13 | 1996-06-13 | Method for manufacturing metal support plate of resin-sealed electronic component |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17412196A JP3509835B2 (en) | 1996-06-13 | 1996-06-13 | Method for manufacturing metal support plate of resin-sealed electronic component |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH105895A JPH105895A (en) | 1998-01-13 |
| JP3509835B2 true JP3509835B2 (en) | 2004-03-22 |
Family
ID=15973021
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17412196A Expired - Fee Related JP3509835B2 (en) | 1996-06-13 | 1996-06-13 | Method for manufacturing metal support plate of resin-sealed electronic component |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3509835B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006005281A (en) * | 2004-06-21 | 2006-01-05 | Nippon Inter Electronics Corp | Lead frame, manufacturing method thereof, and resin-sealed semiconductor device |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5046579B2 (en) * | 2006-07-25 | 2012-10-10 | 新電元工業株式会社 | Lead frame manufacturing method and lead frame using the manufacturing method |
| JP6071337B2 (en) * | 2012-08-30 | 2017-02-01 | ダイハツ工業株式会社 | Manufacturing method of grooved plate |
| JP2015233114A (en) * | 2014-05-13 | 2015-12-24 | 株式会社デンソー | Semiconductor device |
| JP6265176B2 (en) * | 2015-07-13 | 2018-01-24 | トヨタ自動車株式会社 | Metal surface roughening apparatus and surface roughening method |
| CN105081165B (en) * | 2015-09-21 | 2017-03-08 | 哈尔滨工业大学 | A kind of method that Metal Substrate Electronic Packaging thin-walled parts order loads die-forging forming |
| FR3051697B1 (en) * | 2016-05-27 | 2018-05-11 | Saint Jean Industries | PROCESS FOR MANUFACTURING A WORK PART AT LEAST PARTIALLY OF A METAL ALLOY, AND METHOD OF OPTIMIZATION |
| CN110773687A (en) * | 2019-10-24 | 2020-02-11 | 江阴市恒润重工股份有限公司 | Forming method of low-temperature-resistant forging for petrochemical industry |
| TWI824672B (en) * | 2022-08-22 | 2023-12-01 | 順德工業股份有限公司 | Packaging structure and its metal components |
-
1996
- 1996-06-13 JP JP17412196A patent/JP3509835B2/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006005281A (en) * | 2004-06-21 | 2006-01-05 | Nippon Inter Electronics Corp | Lead frame, manufacturing method thereof, and resin-sealed semiconductor device |
| JP4537774B2 (en) * | 2004-06-21 | 2010-09-08 | 日本インター株式会社 | Lead frame manufacturing method |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH105895A (en) | 1998-01-13 |
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