JP3501379B2 - Image sensor with light source - Google Patents
Image sensor with light sourceInfo
- Publication number
- JP3501379B2 JP3501379B2 JP25202894A JP25202894A JP3501379B2 JP 3501379 B2 JP3501379 B2 JP 3501379B2 JP 25202894 A JP25202894 A JP 25202894A JP 25202894 A JP25202894 A JP 25202894A JP 3501379 B2 JP3501379 B2 JP 3501379B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- image sensor
- light
- transparent substrate
- solid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000000758 substrate Substances 0.000 claims description 98
- 239000010409 thin film Substances 0.000 claims description 36
- 239000010410 layer Substances 0.000 description 32
- 239000010408 film Substances 0.000 description 29
- 238000000034 method Methods 0.000 description 17
- 238000010586 diagram Methods 0.000 description 12
- 238000003384 imaging method Methods 0.000 description 10
- 239000000853 adhesive Substances 0.000 description 8
- 230000001070 adhesive effect Effects 0.000 description 8
- 239000011521 glass Substances 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 239000012535 impurity Substances 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 229910052814 silicon oxide Inorganic materials 0.000 description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 230000005525 hole transport Effects 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 239000011888 foil Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- -1 Phospho Chemical class 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 229920006332 epoxy adhesive Polymers 0.000 description 1
- 239000005338 frosted glass Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000005984 hydrogenation reaction Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- SJCKRGFTWFGHGZ-UHFFFAOYSA-N magnesium silver Chemical compound [Mg].[Ag] SJCKRGFTWFGHGZ-UHFFFAOYSA-N 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 239000013585 weight reducing agent Substances 0.000 description 1
Landscapes
- Electroluminescent Light Sources (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Facsimile Heads (AREA)
Description
【0001】[0001]
【産業上の利用分野】本発明は、ファクシミリ等に用い
られる光源付きイメージセンサに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an image sensor with a light source used for a facsimile or the like.
【0002】[0002]
【従来の技術】近年、ファクシミリはその普及に合わせ
て、より小型化、軽量化、低価格化が求められている。
ファクシミリ等に用いられているイメージセンサは大別
して非密着型、密着型、完全密着型の3種類がある。2. Description of the Related Art In recent years, facsimiles have been required to be smaller, lighter, and cheaper in accordance with the spread thereof.
Image sensors used in facsimiles and the like are roughly classified into three types: non-contact type, contact type, and perfect contact type.
【0003】電荷結合素子(CCD)を用いた非密着型
は、すでに確立されている、シリコンウェハを用いたL
SI製造プロセスで生産できることやCCDチップが小
型で済むこともあって価格面で有利であるが、原稿を縮
小レンズ系を通してCCDに投影しているため、小型
化、軽量化に関しては他の2方式に比べ劣る。The non-contact type using a charge coupled device (CCD) has already been established, and L using a silicon wafer is used.
It is advantageous in terms of price because it can be produced by the SI manufacturing process and the CCD chip can be small, but since the original is projected on the CCD through the reduction lens system, there are two other methods for downsizing and weight reduction. Inferior to.
【0004】また、密着型イメージセンサは縮小光学系
がいらないため小型化が比較的容易であるというメリッ
トがあり徐々に市場に受け入れられつつあるが、やや高
価であるということがその普及を阻んでいるという状態
である。また、セルフォックレンズアレイを用いて原稿
を固体撮像素子上に投影していることと光源として発光
ダイオード(LED)アレイがあるために、ある程度の
幅と厚さが必要(〜15mm)である。Further, the contact type image sensor has a merit that it is relatively easy to miniaturize since it does not need a reduction optical system and is gradually being accepted in the market, but its rather high price hinders its popularization. It is in the state of being. Further, since the original is projected on the solid-state image pickup device using the SELFOC lens array and a light emitting diode (LED) array is used as a light source, a certain width and thickness are required (up to 15 mm).
【0005】一方、完全密着型イメージセンサは密着型
イメージセンサと比してもさらに小型化が可能であり、
セルフォックレンズアレイと撮像素子の光学的な位置調
整が不必要であるため組立工程の簡素化が容易であると
いう特徴を持つ。しかしながら、密着型イメージセンサ
と同様にLED分の厚みはやはり必要である。また、完
全密着型イメージセンサは固体撮像素子が配置されてい
る基板の裏側から原稿に光を投射する必要があるため透
明基板上に固体撮像素子を形成する必要があり、シリコ
ンウェハ上に形成されるCCDやアルミナ基板などの光
を透過しない基板に形成された固体撮像素子を完全密着
型イメージセンサ構造にする事は困難であった。On the other hand, the perfect contact image sensor can be further downsized as compared with the contact image sensor.
Since it is unnecessary to adjust the optical positions of the SELFOC lens array and the image sensor, the assembly process can be simplified easily. However, as in the contact image sensor, the thickness of the LED is still necessary. In addition, since the perfect contact image sensor needs to project light onto the original from the back side of the substrate on which the solid-state image sensor is arranged, it is necessary to form the solid-state image sensor on the transparent substrate, which is formed on the silicon wafer. It has been difficult to form a solid-state image sensor structure for a solid-state image sensor formed on a substrate that does not transmit light, such as a CCD or an alumina substrate.
【0006】以下、従来例を図面に基づいて説明する。
図7は、従来例の説明図であり、図7(a)は、従来の
密着型イメージセンサの説明である。図7(a)におい
て、筐体41内には、LEDハウス42とセルフォック
レンズアレイ43と固体撮像素子が載っている基板1が
設けてある。また、LEDハウス内に設けられるLED
は、点光源のため、すりガラスのような光拡散板やレン
ズ等を用いて光を均質化している。このため、原稿面と
の距離を取る必要があった。A conventional example will be described below with reference to the drawings.
FIG. 7 is an explanatory view of a conventional example, and FIG. 7A is an explanation of a conventional contact image sensor. In FIG. 7A, the substrate 1 on which the LED house 42, the SELFOC lens array 43, and the solid-state image sensor are mounted is provided in the housing 41. Also, the LED installed in the LED house
Since it is a point light source, light is homogenized using a light diffusion plate such as frosted glass or a lens. Therefore, it is necessary to keep a distance from the document surface.
【0007】この密着型イメージセンサは、LEDハウ
ス42から発射された光が筐体41上の原稿(図示せ
ず)により反射し、この反射光がセルフォックレンズア
レイ43を通り基板1上の固体撮像素子に入力されるも
のである。In this contact type image sensor, the light emitted from the LED house 42 is reflected by a document (not shown) on the housing 41, and the reflected light passes through the SELFOC lens array 43 and is solid on the substrate 1. It is input to the image sensor.
【0008】このような密着型イメージセンサは、図7
(a)下部の矢印で示すように、ある程度の幅と厚さが
必要となる。図7(b)は、従来の完全密着型イメージ
センサの説明であり、筐体41の上面には、固体撮像素
子10が載っている基板1が設けてあり、この基板1に
は光を透過するためのスリット40が設けてある。ま
た、筐体41の下面には、LEDハウス42が設けてあ
る。この完全密着型イメージセンサは、LEDハウスか
ら発射された光が基板1に設けた光を透過させるための
スリット40を通り原稿(図示せず)より反射し、この
反射光が固体撮像素子10に入力されるものである。Such a contact type image sensor is shown in FIG.
(A) As shown by the arrow at the bottom, a certain width and thickness are required. FIG. 7B is a description of a conventional perfect contact type image sensor, in which the substrate 1 on which the solid-state image sensor 10 is mounted is provided on the upper surface of the housing 41, and the substrate 1 transmits light. A slit 40 for doing this is provided. An LED house 42 is provided on the lower surface of the housing 41. In this perfect contact type image sensor, the light emitted from the LED house passes through a slit 40 for transmitting the light provided on the substrate 1 and is reflected by a document (not shown), and the reflected light is reflected by the solid-state image sensor 10. It is input.
【0009】この完全密着型イメージセンサは、図7
(b)下部の上下の矢印のように、LEDハウス分の厚
さが必要となる。This perfect contact type image sensor is shown in FIG.
(B) The thickness of the LED house is required as indicated by the upper and lower arrows at the bottom.
【0010】[0010]
【発明が解決しようとする課題】上記従来のものにおい
て、次のような課題があった。非密着型のイメージセン
サは、原稿を縮小レンズ系を通してCCDに投影してい
るため、小型化、軽量化ができなかった。また、密着型
イメージセンサは、光源としてLEDハウスがあるた
め、ある程度以上小型化することができなかった。さら
に、完全密着型イメージセンサは、LEDハウスの厚さ
が必要であった。SUMMARY OF THE INVENTION The above-mentioned conventional devices have the following problems. Since the non-contact type image sensor projects the original document onto the CCD through the reduction lens system, the size and weight cannot be reduced. Further, since the contact type image sensor has an LED house as a light source, it cannot be downsized to a certain extent. Further, the perfect contact type image sensor requires the thickness of the LED house.
【0011】以上、イメージセンサの大きさを制限して
いるものはレンズや光源などの光学系であることが分か
った。即ち、さらにイメージセンサの小型化を達成する
ためには、光学系を小型化する事が必要であることが分
かる。また、これらの光学系は製造コストという点から
みても固体撮像素子本体と同等かそれ以上の割合を占め
ており、光学系のコストダウンが低価格化に非常に重要
であるといえる。As described above, it has been found that what limits the size of the image sensor is an optical system such as a lens or a light source. In other words, it is necessary to reduce the size of the optical system in order to further reduce the size of the image sensor. Further, these optical systems occupy a ratio equal to or higher than that of the solid-state image pickup device main body from the viewpoint of manufacturing cost, and it can be said that the cost reduction of the optical system is very important for lowering the price.
【0012】本発明は、薄形、超小型でかつ安価な光源
付きイメージセンサを実現することを目的とする。An object of the present invention is to realize an image sensor with a light source which is thin, ultra-compact and inexpensive.
【0013】[0013]
【課題を解決するための手段】上記目的を達成するた
め、本発明では次のように構成した。図1は、本発明の
第1実施例構成図、図6は、本発明の第2実施例構成図
である。図1において、基板1上に原稿28の反射光が
入力される固体撮像素子10と固体撮像素子10の読み
取り駆動回路20を形成する。また、前記基板1とほぼ
同じ程度の厚さの透明基板21上(図1では下面)にラ
イン発光を行い原稿28を照射する薄膜発光素子30を
形成し、この透明基板21の少なくとも一側面にアルミ
ニウム(Al)等の光反射体29を設ける。次に、固体
撮像素子10側の基板1の側面に薄膜発光素子30の基
板21を両者がほぼ同一平面となるように固着する。さ
らに、これらの固体撮像素子10と透明基板21上に透
明薄板32を透明の接着剤27等で一体化(接着又はモ
ールド)する。In order to achieve the above object, the present invention is configured as follows. FIG. 1 is a configuration diagram of a first embodiment of the present invention, and FIG. 6 is a configuration diagram of a second embodiment of the present invention. In FIG. 1, a solid-state image sensor 10 to which reflected light of a document 28 is input and a reading drive circuit 20 of the solid-state image sensor 10 are formed on a substrate 1. Further, a thin film light emitting element 30 for irradiating a document 28 with line emission is formed on a transparent substrate 21 (lower surface in FIG. 1) having a thickness substantially the same as the substrate 1, and at least one side surface of the transparent substrate 21 is formed. A light reflector 29 such as aluminum (Al) is provided. Next, the substrate 21 of the thin-film light emitting device 30 is fixed to the side surface of the substrate 1 on the solid-state image pickup device 10 side so that they are substantially flush with each other. Further, the transparent thin plate 32 is integrated (bonded or molded) on the solid-state imaging device 10 and the transparent substrate 21 with the transparent adhesive 27 or the like.
【0014】また、図6に示すように、固体撮像素子1
0を遮光層31を介して透明の基板1上に形成し、基板
1の遮光層31に窓33を設け、窓33の設けられた基
板1の下面に、薄膜発光素子30の透明基板21の照射
面を密接する。さらに、この固体撮像素子10、窓33
上に透明薄板32を透明の接着剤27等で一体化する。Further, as shown in FIG. 6, the solid-state image pickup device 1
0 is formed on the transparent substrate 1 through the light shielding layer 31, a window 33 is provided in the light shielding layer 31 of the substrate 1, and the transparent substrate 21 of the thin film light emitting element 30 is provided on the lower surface of the substrate 1 provided with the window 33. Close the illuminated surface. Furthermore, the solid-state image sensor 10, the window 33
The transparent thin plate 32 is integrated with the transparent adhesive 27 or the like.
【0015】[0015]
【作用】上記構成に基づく本発明の作用を説明する。図
1の薄膜発光素子30から発射された光は、透明基板2
1と透明薄板32を通して原稿28に投射され、この原
稿28からの反射光が透明薄板32を通して固体撮像素
子10に入力され、固体撮像素子10で光電変換され
る。この光電変換された出力が読み取り駆動回路20に
入力され、読み取り駆動回路20から原稿の濃淡に応じ
た信号が得られる。The operation of the present invention based on the above configuration will be described. The light emitted from the thin film light emitting device 30 of FIG.
1 and the transparent thin plate 32 are projected onto the original 28, and the reflected light from the original 28 is input to the solid-state imaging device 10 through the transparent thin plate 32 and photoelectrically converted by the solid-state imaging device 10. This photoelectrically converted output is input to the reading drive circuit 20, and a signal corresponding to the lightness and darkness of the original is obtained from the reading drive circuit 20.
【0016】このように、薄膜発光素子30は、光反射
体29により原稿28を効率よく照射することができ、
また薄膜発光素子30は、例えば薄膜面状体の有機エレ
クトロルミネセンス(以上、ELという)素子を用いる
ので、透明基板21上にフラットに形成することができ
る。このため、透明基板21と固体撮像素子10の基板
1とをほぼ同一平面となるように固着することができ、
超小型で安価な光源付きイメージセンサを得ることがで
きる。As described above, the thin film light emitting device 30 can efficiently irradiate the original 28 with the light reflector 29.
Since the thin film light emitting element 30 uses, for example, a thin film planar organic electroluminescence (hereinafter referred to as EL) element, it can be formed flat on the transparent substrate 21. Therefore, the transparent substrate 21 and the substrate 1 of the solid-state imaging device 10 can be fixed so as to be substantially flush with each other.
It is possible to obtain an image sensor with a light source that is ultra-compact and inexpensive.
【0017】また、図6の薄膜発光素子30から発射さ
れた光は、透明基板21、基板1、遮光層31の窓3
3、透明薄板32を通して原稿28に投射され、この原
稿28からの反射光が透明薄板32を通して固体撮像素
子10に入力され、固体撮像素子10で光電変換され
る。これにより原稿28の濃淡に応じた信号が得られ
る。Light emitted from the thin film light emitting device 30 of FIG. 6 is transmitted through the transparent substrate 21, the substrate 1 and the window 3 of the light shielding layer 31.
3. The light is projected onto the original 28 through the transparent thin plate 32, and the reflected light from the original 28 is input to the solid-state image sensor 10 through the transparent thin plate 32 and photoelectrically converted by the solid-state image sensor 10. As a result, a signal corresponding to the shading of the original 28 is obtained.
【0018】この薄膜発光素子30は、有機EL素子で
構成されるので、透明基板21上にフラットに設置する
ことができる。このため基板1と透明基板21を重ねて
も薄形とすることができ、さらに固体撮像素子10に接
している遮光層31に開いた窓33を通して原稿を照射
するためイメージセンサの分解能を向上することができ
る。Since the thin film light emitting device 30 is composed of an organic EL device, it can be installed flat on the transparent substrate 21. Therefore, the substrate 1 and the transparent substrate 21 can be made thin even if they are stacked, and the original is irradiated through the window 33 opened in the light-shielding layer 31 in contact with the solid-state imaging device 10, so that the resolution of the image sensor is improved. be able to.
【0019】[0019]
〔本発明の第1実施例の説明〕本発明の第1実施例を図
1〜図5に基づき説明する。図1は本発明の第1実施例
構成図、図2はフォトトランジスタの説明図、図3、図
4は固体撮像素子の形成工程説明図、図5は薄膜発光素
子の形成工程説明図である。[Description of First Embodiment of the Present Invention] A first embodiment of the present invention will be described with reference to FIGS. 1 is a configuration diagram of a first embodiment of the present invention, FIG. 2 is an explanatory diagram of a phototransistor, FIGS. 3 and 4 are explanatory diagrams of a solid-state imaging device forming process, and FIG. 5 is an explanatory diagram of a thin-film light emitting device forming process. .
【0020】図1は光源付きイメージセンサの構成を示
しており、以下図1の説明をする。基板1上に固体撮像
素子10と固体撮像素子10の読み取り駆動回路20を
形成する。また、前記基板1とほぼ同程度の厚さの透明
基板21上に薄膜発光素子30を形成し、この透明基板
21の側面をAl等の光を反射する薄膜、厚膜あるいは
金属箔である光反射体29で被覆する。FIG. 1 shows the configuration of an image sensor with a light source, which will be described below. The solid-state image sensor 10 and the read drive circuit 20 for the solid-state image sensor 10 are formed on the substrate 1. In addition, a thin film light emitting device 30 is formed on a transparent substrate 21 having a thickness approximately the same as the substrate 1, and the side surface of the transparent substrate 21 is a thin film, a thick film or a metal foil that reflects light such as Al. Cover with a reflector 29.
【0021】次に、固体撮像素子10と透明基板21の
上面に厚さが50〜200μmの薄板ガラスである透明
薄板32を、例えばエポキシ系接着剤、紫外線硬化型の
接着剤等の透明の接着剤27で接着するものである。こ
の場合、読み取る原稿28は透明薄板32に接触するも
のである。Next, a transparent thin plate 32, which is a thin glass plate having a thickness of 50 to 200 μm, is attached to the upper surfaces of the solid-state image pickup device 10 and the transparent substrate 21 by a transparent adhesive such as an epoxy adhesive or an ultraviolet curing adhesive. The adhesive 27 is used for adhesion. In this case, the original 28 to be read comes into contact with the transparent thin plate 32.
【0022】図2は、固体撮像素子10に用いるフォト
トランジスタの説明図である。図2において、1は基板
であり、例えばガラス基板、石英基板、セラミックス
(Al 2 O3 )、シリコン基板(多結晶又は単結晶)等
である。2は絶縁膜であり、基板1がシリコン基板の場
合は、熱酸化工程を使用して形成できる。3は活性層、
4はゲート絶縁膜、5はゲート電極、6は層間絶縁膜、
7は金属配線電極、8はいわゆるソース・ドレイン領域
である不純物導入部である。FIG. 2 shows a photo used in the solid-state image sensor 10.
It is explanatory drawing of a transistor. In FIG. 2, 1 is a substrate
And, for example, glass substrate, quartz substrate, ceramics
(Al 2O3), Silicon substrate (polycrystal or single crystal), etc.
Is. 2 is an insulating film, and when the substrate 1 is a silicon substrate
If so, it can be formed using a thermal oxidation process. 3 is an active layer,
4 is a gate insulating film, 5 is a gate electrode, 6 is an interlayer insulating film,
7 is a metal wiring electrode, 8 is a so-called source / drain region
Is the impurity introduction part.
【0023】このフォトトランジスタは、薄膜トランジ
スタ(TFT)を製造するプロセスとほぼ同時に構成す
ることのできる薄膜フォトトランジスタを用いるもので
ある。この薄膜フォトトランジスタがイメージセンサの
光電変換素子(固体撮像素子)となるものである。図2
では、入力光は上面より入力され活性層3で光電変換す
るものである。This phototransistor uses a thin film phototransistor which can be formed almost at the same time as the process of manufacturing a thin film transistor (TFT). This thin film phototransistor serves as a photoelectric conversion element (solid-state image pickup element) of the image sensor. Figure 2
Then, the input light is input from the upper surface and photoelectrically converted in the active layer 3.
【0024】図3は、固体撮像素子の形成工程説明図
(1)、図4は、固体撮像素子の形成工程説明図(2)
である。以下、図3、図4に基づいて説明する。基板1
として例えば安価なグレードの低い単結晶シリコン基板
又は多結晶シリコン基板を用い、熱酸化により300n
mの熱酸化シリコン膜を形成する。こうして形成した酸
化シリコン膜は使用したシリコン基板1のグレードによ
っては不純物を含む場合があるため、更に200nmの
清浄な酸化シリコン膜を減圧気相成長(LPCVD)法
で成膜して絶縁膜2を形成する(図3(a)参照)。FIG. 3 is an explanatory view (1) of the solid-state image sensor forming process, and FIG. 4 is an explanatory view (2) of the solid-state image sensor forming process.
Is. Hereinafter, description will be given based on FIGS. 3 and 4. Board 1
For example, an inexpensive low-grade single crystal silicon substrate or a polycrystalline silicon substrate is used, and 300 n is obtained by thermal oxidation.
m thermal oxide silicon film is formed. Since the silicon oxide film thus formed may contain impurities depending on the grade of the silicon substrate 1 used, a 200 nm clean silicon oxide film is further formed by the low pressure vapor deposition (LPCVD) method to form the insulating film 2. Formed (see FIG. 3A).
【0025】この後に活性層3として200nmの膜厚
の非晶質(アモルファス)シリコンをプラズマCVD法
により成膜する。このときの成膜条件は反応ガスとして
シランを用い、反応温度200℃、ガス圧5.3Pa、
RF(高周波)電力35Wで被着速度6nm/minで
行い、更に600℃で20時間加熱することで非晶質シ
リコンは固相成長し、結晶性を有するようになる(図3
(b)参照)。なお、このプラズマCVD法のかわりに
LPCVD法を用いることもできる。After that, as the active layer 3, 200 nm thick amorphous silicon is formed by plasma CVD. The film forming conditions at this time were silane used as a reaction gas, a reaction temperature of 200 ° C., a gas pressure of 5.3 Pa,
By performing RF (high frequency) power of 35 W at a deposition rate of 6 nm / min, and further heating at 600 ° C. for 20 hours, amorphous silicon grows in a solid phase and becomes crystalline (FIG. 3).
(See (b)). An LPCVD method may be used instead of the plasma CVD method.
【0026】こうして得られた多結晶シリコン活性層3
を島状にパターニングする(図3(c)参照)。引き続
きゲート酸化シリコン膜4が例えば100nmになるよ
うに多結晶シリコン活性層3の熱酸化を行う(図3
(d)参照)。Polycrystalline silicon active layer 3 thus obtained
Is patterned into an island shape (see FIG. 3C). Subsequently, the polycrystalline silicon active layer 3 is thermally oxidized so that the gate silicon oxide film 4 becomes, for example, 100 nm (FIG. 3).
(See (d)).
【0027】この酸化シリコン膜4の形成後速やかにL
PCVD法により、ゲート電極5としてリン(P)を1
×1020atoms/cm3 程度以上ドーピングしたn
+ ポリシリコン(poly−Si)を約200nm成膜
する(図3(e)参照)。Immediately after the formation of the silicon oxide film 4, L
Phosphorus (P) is used as the gate electrode 5 by the PCVD method.
N doped with about 10 20 atoms / cm 3 or more
+ Polysilicon (poly-Si) is deposited to a thickness of about 200 nm (see FIG. 3E).
【0028】次に、ドライエッチング法によりゲート電
極5をパターニングし、引き続き、コンタクト層を形成
する活性層3上の酸化シリコン膜4を一部ないし全部取
り除く(図3(f)参照)。Next, the gate electrode 5 is patterned by the dry etching method, and then the silicon oxide film 4 on the active layer 3 forming the contact layer is partially or completely removed (see FIG. 3 (f)).
【0029】イオン注入あるいはイオンドーピング法に
より不純物の導入を行い不純物導入部8を形成する。N
型に対してはリン(P)を60KVの加速電圧で1×1
015atoms/cm2 打ち込む(図4(a)参照)。
またP型に対しては不純物の導入を行いたくない部分を
フォトレジスト9で被覆して更にボロン(B)を40K
Vの加速電圧で5×1015atoms/cm2 のドーズ
量を打ち込んだ後(図4(b)参照)、これら導入した
不純物を活性化するため窒素雰囲気中において600℃
のアニール温度で12時間の熱処理を行う。Impurities are introduced by ion implantation or ion doping to form an impurity introduction part 8. N
Phosphorus (P) is applied to the mold at an acceleration voltage of 60 KV 1 × 1
Implanting 0 15 atoms / cm 2 (see FIG. 4A).
Further, for the P type, a portion where the introduction of impurities is not desired is covered with a photoresist 9 and boron (B) is added to 40K.
After implanting a dose of 5 × 10 15 atoms / cm 2 with an accelerating voltage of V (see FIG. 4B), 600 ° C. in a nitrogen atmosphere to activate the introduced impurities.
Heat treatment is performed for 12 hours at the annealing temperature.
【0030】次に、常圧CVD法により層間絶縁膜6と
して酸化シリコン膜あるいはPSG(Phospho
Silicate Glass)膜を約800nm成膜
した後(図4(c)参照)、コンタクトホールを開孔し
(図4(d)参照)、アルミニウム(Al)7をスパッ
タ法で成膜する(図4(e)参照)。その後、パターニ
ングしてAl配線を施す(図4(f)参照)。最後に電
気特性を改善するために350℃の水素雰囲気中で1時
間のアニール処理を行う。これにより、所望のイメージ
センサ、即ち、固体撮像素子10と読み取り駆動回路2
0を同時に得ることができる。Next, a silicon oxide film or PSG (Phospho) is used as the interlayer insulating film 6 by the atmospheric pressure CVD method.
After forming a Silicate Glass film with a thickness of about 800 nm (see FIG. 4C), a contact hole is opened (see FIG. 4D), and aluminum (Al) 7 is formed with a sputtering method (see FIG. 4). (See (e)). After that, patterning is performed to provide Al wiring (see FIG. 4F). Finally, in order to improve electric characteristics, annealing treatment is performed in a hydrogen atmosphere at 350 ° C. for 1 hour. As a result, a desired image sensor, that is, the solid-state image sensor 10 and the reading drive circuit 2
0 can be obtained at the same time.
【0031】図5は、薄膜発光素子の形成工程説明図で
ある。図5において、まず、透明基板21である固体撮
像素子10の基板1とほぼ同じ厚さのガラス等の基板の
洗浄を行う(図5(a)参照)。FIG. 5 is an explanatory view of a process of forming a thin film light emitting device. In FIG. 5, first, a substrate made of glass or the like having substantially the same thickness as the substrate 1 of the solid-state imaging device 10 which is the transparent substrate 21 is washed (see FIG. 5A).
【0032】次に、この透明基板21上に透明電極22
となるITO(インジウムすず酸化物)を成膜し(図5
(b)参照)、このITO膜をパターニングし(図5
(c)参照)、その上に絶縁膜23を形成する。この絶
縁膜23は例えばSiO2 が主成分であるSOG(Sp
in On Glass)膜を成膜する(図5(d)参
照)。この時、必要に応じて水素化処理を行いITOの
特性を良好にする(抵抗を小さくし、光の透明率を向上
する)。Next, the transparent electrode 22 is formed on the transparent substrate 21.
A film of ITO (Indium Tin Oxide) is formed (see FIG. 5).
(See (b)), and patterning this ITO film (see FIG. 5).
(See (c)), and the insulating film 23 is formed thereon. The insulating film 23 is SiO 2 is a main component for example SOG (Sp
An in-on glass) film is formed (see FIG. 5D). At this time, hydrogenation treatment is performed as necessary to improve the characteristics of ITO (reduce resistance and improve light transparency).
【0033】次に、この絶縁膜23をパターニングし
(図5(e)参照)、有機EL膜24を抵抗加熱でマス
ク蒸着する(図5(f)参照)。この有機EL膜24
は、図5(f)のように例えば電子輸送層24−1、正
孔輸送層24−2、発光層24−3の3層よりなる。Next, the insulating film 23 is patterned (see FIG. 5E), and the organic EL film 24 is mask-deposited by resistance heating (see FIG. 5F). This organic EL film 24
5F is composed of, for example, three layers of an electron transport layer 24-1, a hole transport layer 24-2, and a light emitting layer 24-3.
【0034】さらにMgAg(マグネシウム銀合金)膜
25を蒸着し(図5(g)参照)、その後、配線電極2
6としてAlを蒸着又はスパッタリング等で成膜する
(図5(h)参照)。Further, a MgAg (magnesium-silver alloy) film 25 is vapor-deposited (see FIG. 5 (g)), and then the wiring electrode 2 is formed.
As 6 is formed a film of Al by vapor deposition or sputtering (see FIG. 5 (h)).
【0035】このAl膜をパターニングし配線電極26
を形成し、薄膜発光素子30を形成する(図5(i)参
照)。次に、図1のように薄膜発光素子30の透明基板
21の側面をAl等の光を反射する薄膜、厚膜あるいは
金属箔等の光反射体29で被覆する。そして、この透明
基板21と固体撮像素子10が形成された基板1とを筐
体(図示せず)に固定することにより、透明基板21を
基板1の側面に隣接して固定する。The Al film is patterned to form the wiring electrode 26.
Then, the thin film light emitting device 30 is formed (see FIG. 5I). Next, as shown in FIG. 1, the side surface of the transparent substrate 21 of the thin film light emitting device 30 is covered with a light reflector 29 such as a thin film, a thick film or a metal foil that reflects light such as Al. Then, the transparent substrate 21 and the substrate 1 on which the solid-state imaging device 10 is formed are fixed to a housing (not shown), so that the transparent substrate 21 is fixed adjacent to the side surface of the substrate 1.
【0036】なお、透明基板21と基板1は、密接して
固定することもできる。また光反射体29は、一側面が
光反射面に接するような場合は、他側面のみに設けるよ
うにしてもよい。The transparent substrate 21 and the substrate 1 can be fixed in close contact with each other. Further, the light reflector 29 may be provided only on the other side surface when one side surface is in contact with the light reflecting surface.
【0037】更に、この固体撮像素子10と透明基板2
1上に透明薄板32を透明の接着剤27等で固着する。
この透明薄板32として厚さが50〜200μmの薄板
ガラスを用いる。この薄板ガラスの厚さは、200μm
以上になると隣の反射光が固体撮像素子10に混じり込
むことになり、イメージセンサの分解能が悪くなり、ま
た、50μmより薄いと薄板としての強度が保持できな
くなる。Further, the solid-state image pickup device 10 and the transparent substrate 2
A transparent thin plate 32 is fixed onto the surface 1 by a transparent adhesive 27 or the like.
As the transparent thin plate 32, a thin glass plate having a thickness of 50 to 200 μm is used. The thickness of this thin glass is 200 μm
In the above case, the adjacent reflected light is mixed in the solid-state image sensor 10, the resolution of the image sensor is deteriorated, and if it is thinner than 50 μm, the strength as a thin plate cannot be maintained.
【0038】このようにして、光源付きイメージセンサ
を薄形、超小型でかつ安価に得ることができる。なお、
固体撮像素子10の基板1に透明の基板を用いることに
より、薄膜発光素子30の透明基板21は基板1と同じ
基板を用いることができより安価にすることができる。
さらに、基板1と透明基板21を固定する筐体を安価な
平板の鉄板等とすることが可能である。In this way, it is possible to obtain an image sensor with a light source that is thin, ultra-compact and inexpensive. In addition,
By using a transparent substrate as the substrate 1 of the solid-state imaging device 10, the transparent substrate 21 of the thin-film light emitting device 30 can be the same substrate as the substrate 1, and the cost can be reduced.
Further, the housing for fixing the substrate 1 and the transparent substrate 21 can be an inexpensive flat iron plate or the like.
【0039】〔第2実施例の説明図〕図6は第2実施例
の説明図であり、光源付きイメージセンサの構成を示
す。図6において、透明のガラス等の基板1に遮光層3
1を設け、この遮光層31にスリット状の窓33を形成
する。さらに、この遮光層31上に複数個の固体撮像素
子10及び読み取り駆動回路(図示せず)等を形成す
る。[Explanatory drawing of the second embodiment] FIG. 6 is an explanatory view of the second embodiment, showing the configuration of an image sensor with a light source. In FIG. 6, the light shielding layer 3 is formed on the substrate 1 such as transparent glass.
1, and a slit-shaped window 33 is formed in the light shielding layer 31. Further, a plurality of solid-state image pickup devices 10, a read drive circuit (not shown), and the like are formed on the light shielding layer 31.
【0040】また、薄膜発光素子30を透明基板21上
に形成し、この透明基板21の側面を光を反射する薄
膜、厚膜あるいは金属箔等の光反射体29で被覆する。
次に、基板1の窓33が開けられた下面に、薄膜発光素
子30が形成されていない透明基板21の光照射面を密
接させる。さらに、この固体撮像素子10と窓33上に
薄板ガラスである透明薄板32を透明の接着剤27等で
固着する。Further, the thin film light emitting element 30 is formed on the transparent substrate 21, and the side surface of the transparent substrate 21 is covered with a light reflector 29 such as a thin film, a thick film or a metal foil which reflects light.
Next, the light irradiation surface of the transparent substrate 21 on which the thin film light emitting element 30 is not formed is brought into close contact with the lower surface of the substrate 1 in which the window 33 is opened. Further, a transparent thin plate 32, which is a thin glass plate, is fixed on the solid-state image sensor 10 and the window 33 with a transparent adhesive 27 or the like.
【0041】なお、遮光層31上に形成される固体撮像
素子10等および薄膜発光素子30は、第1実施例と同
様に薄膜で形成することができる。この第2実施例で
は、ライン状の薄膜発光素子30からの光は、透明基板
21、基板1、窓33、透明薄板32を通して原稿28
を照射する。この原稿28からの反射光が透明薄板32
を通して固体撮像素子10に入力される。The solid-state image pickup device 10 and the like and the thin film light emitting device 30 formed on the light shielding layer 31 can be formed of thin films as in the first embodiment. In the second embodiment, the light from the line-shaped thin film light emitting element 30 passes through the transparent substrate 21, the substrate 1, the window 33, and the transparent thin plate 32, and is the original 28.
Irradiate. The light reflected from the original 28 is transmitted through the transparent thin plate 32.
Is input to the solid-state image sensor 10.
【0042】これにより、原稿28の濃淡に応じた信号
を固体撮像素子10より得ることができる。この第2実
施例では、固体撮像素子10の基板1と薄膜発光素子の
透明基板21は必ずしも同じものを使用する必要がない
が、同じものを使用することにより安価になる。また、
厚みが第1実施例のものと比較して2倍程度となるが、
基板1及び透明基板21として0.7〜1.1mmのも
のを使用すれば重ね合わせても1.4〜2.2mm程度
であり従来のLEDハウス42より小型となる。As a result, it is possible to obtain a signal from the solid-state image pickup device 10 according to the shading of the original document 28. In the second embodiment, the substrate 1 of the solid-state image pickup device 10 and the transparent substrate 21 of the thin film light emitting device do not necessarily have to be the same, but the use of the same makes the cost low. Also,
Although the thickness is about twice that of the first embodiment,
If the substrate 1 and the transparent substrate 21 having a thickness of 0.7 to 1.1 mm are used, the size is about 1.4 to 2.2 mm even when they are overlapped, which is smaller than the conventional LED house 42.
【0043】更に、各固体撮像素子10に接している遮
光層31に開いた窓を通してスポット光を原稿に当てる
ことができるためイメージセンサの分解能の向上ができ
る。また、前記説明では、有機EL膜を電子輸送層、正
孔輸送層、発光層の3層構成のものについて行ったが、
本発明は勿論これに限定されるものではなく、例えば、
電子輸送層(発光層)と正孔輸送層又は、電子輸送層と
正孔輸送層(発光層)の如き2層構成のものを使用して
もよい。Further, since the spot light can be applied to the original through the window opened in the light shielding layer 31 in contact with each solid-state image pickup device 10, the resolution of the image sensor can be improved. Further, in the above description, the organic EL film has a three-layer structure of an electron transport layer, a hole transport layer, and a light emitting layer.
The present invention is of course not limited to this, and for example,
A two-layer structure such as an electron transport layer (light emitting layer) and a hole transport layer, or an electron transport layer and a hole transport layer (a light emitting layer) may be used.
【0044】なお、上記説明において原稿とは、紙類等
に記載された文書や図形等のもののみならず、紙類以外
の物体等の発光素子からの光を反射して、電気信号に変
換される被変換物を総称するものである。In the above description, the manuscript is not limited to documents and figures written on paper and the like, but also light from a light emitting element such as an object other than paper is reflected and converted into an electric signal. The converted objects are collectively referred to.
【0045】[0045]
【発明の効果】以上説明したように、本発明によれば次
のような効果がある。
(1)前記薄膜発光素子は透明基板の原稿面側と反対の
面に形成され、薄膜発光素子30を形成した透明基板2
1の側面を光を反射する光反射体29で被覆したため、
読み取り原稿面を効率よく照射することができる。ま
た、薄膜発光素子30は、発光ダイオードのような点光
源と異なり、面光源であるため、光拡散板やレンズを用
いなくとも、読み取り原稿面をむらなく照射することが
できる。As described above, the present invention has the following effects. (1) The thin film light emitting device is provided on the side opposite to the original side of the transparent substrate.
The transparent substrate 2 formed on the surface and on which the thin film light emitting device 30 is formed
Since the side surface of 1 is covered with the light reflector 29 that reflects light,
The surface of the read document can be efficiently illuminated. Further, unlike the point light source such as a light emitting diode, the thin-film light emitting element 30 is a surface light source, and therefore the surface of the read document can be uniformly illuminated without using a light diffusing plate or a lens.
【0046】(2)さらに、前記透明基板および前記基
板はほぼ同じ厚さを有しており、前記透明基板および前
記基板のそれぞれの原稿面側の面がほぼ同一平面となる
ように、薄膜発光素子30が形成された透明基板21を
固体撮像素子10が形成された基板1と隣接して、筐体
の平板面等に固定することにより、薄型で安価にするこ
とができる。(2) Further, the transparent substrate and the substrate
The plates have approximately the same thickness, and the transparent substrate and the front
The surface of each substrate on the side of the original is almost flush.
As described above, the transparent substrate 21 on which the thin film light emitting device 30 is formed is adjacent to the substrate 1 on which the solid-state imaging device 10 is formed, and is fixed to the flat surface of the housing or the like, so that it can be made thin and inexpensive. .
【0047】(3)固体撮像素子10に接している遮光
層31に開いた窓33を通して原稿を照射するため、イ
メージセンサの分解能を向上することができる。(3) Since the original is irradiated through the window 33 opened in the light shielding layer 31 in contact with the solid-state image pickup device 10, the resolution of the image sensor can be improved.
【図1】本発明の第1実施例構成図である。FIG. 1 is a configuration diagram of a first embodiment of the present invention.
【図2】本発明の第1実施例におけるフォトトランジス
タの説明図である。FIG. 2 is an explanatory diagram of a phototransistor according to the first embodiment of the present invention.
【図3】本発明の第1実施例における固体撮像素子の形
成工程説明図(1)である。FIG. 3 is an explanatory diagram (1) of a forming process of the solid-state image sensor according to the first embodiment of the present invention.
【図4】本発明の第1実施例における固体撮像素子の形
成工程説明図(2)である。FIG. 4 is an explanatory view (2) of the forming process of the solid-state image sensor according to the first embodiment of the present invention.
【図5】本発明の第1実施例における薄膜発光素子の形
成工程説明図である。FIG. 5 is an explanatory diagram of the forming process of the thin film light emitting device according to the first embodiment of the present invention.
【図6】本発明の第2実施例の説明図である。FIG. 6 is an explanatory diagram of a second embodiment of the present invention.
【図7】従来例の説明図である。FIG. 7 is an explanatory diagram of a conventional example.
1 基板 10 固体撮像素子 20 読み取り駆動回路 21 透明基板 27 透明接着剤 28 原稿 29 光反射体 30 薄膜発光素子 1 substrate 10 Solid-state image sensor 20 Read drive circuit 21 Transparent substrate 27 Transparent adhesive 28 manuscripts 29 Light reflector 30 Thin film light emitting device
───────────────────────────────────────────────────── フロントページの続き (72)発明者 荒井 三千男 東京都中央区日本橋一丁目13番1号 テ ィーディーケイ株式会社内 (56)参考文献 特開 平5−191563(JP,A) 特開 平6−78104(JP,A) 特開 昭63−102361(JP,A) 特開 平8−55974(JP,A) 実開 昭62−144097(JP,U) (58)調査した分野(Int.Cl.7,DB名) H04N 1/024 - 1/04 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Mitsuo Arai 13-13 Nihonbashi, Chuo-ku, Tokyo TDK Corporation (56) References JP-A-5-191563 (JP, A) JP-A-6 -78104 (JP, A) JP-A-63-102361 (JP, A) JP-A-8-55974 (JP, A) Practical development Sho-62-144097 (JP, U) (58) Fields investigated (Int.Cl) . 7 , DB name) H04N 1/024-1/04
Claims (2)
光素子が形成された透明基板と、 前記原稿によって反射された光が入力される固体撮像素
子が形成された基板とを備える光源付きイメージセンサ
であって、 前記薄膜発光素子は前記透明基板の原稿面側と反対の面
に形成され、 前記透明基板および前記基板はほぼ同じ厚さを有してお
り、 前記透明基板および前記基板のそれぞれの原稿面側の面
がほぼ同一平面となるように、前記基板の側面に前記透
明基板が密接して、前記基板と前記透明基板が筐体の平
板面に固定され、前記透明基板の少なくとも前記基板側以外の一側面は光
反射体で被覆され、さらに、前記透明基板が密接する前
記基板の側面が光反射面でない場合には、前記光反射体
は前記透明基板の前記基板側の一側面にも被覆される こ
とを特徴とする光源付きイメージセンサ。1. An image with a light source, comprising: a transparent substrate on which a thin film light emitting element for emitting light for illuminating an original is formed; and a substrate on which a solid-state image sensor to which the light reflected by the original is input is formed. In the sensor, the thin film light emitting device is formed on a surface of the transparent substrate opposite to a document surface side, the transparent substrate and the substrate have substantially the same thickness, and the transparent substrate and the substrate respectively. The transparent substrate is in close contact with the side surface of the substrate so that the surface of the document surface side of the substrate is substantially flush with the flat surface of the casing.
It is fixed to the plate surface, and at least one side surface of the transparent substrate other than the substrate side is light
Before being covered with a reflector and the transparent substrate is in intimate contact
When the side surface of the substrate is not a light reflecting surface, the light reflector
An image sensor with a light source, wherein the transparent substrate is also coated on one side surface of the transparent substrate .
する光源付きイメージセンサ。2. The image sensor with a light source according to claim 1, wherein the thin film light emitting element is an organic EL element.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP25202894A JP3501379B2 (en) | 1994-10-18 | 1994-10-18 | Image sensor with light source |
US08/541,871 US5627364A (en) | 1994-10-11 | 1995-10-10 | Linear array image sensor with thin-film light emission element light source |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP25202894A JP3501379B2 (en) | 1994-10-18 | 1994-10-18 | Image sensor with light source |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003285735A Division JP3981055B2 (en) | 2003-08-04 | 2003-08-04 | Image sensor with light source |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH08116403A JPH08116403A (en) | 1996-05-07 |
JP3501379B2 true JP3501379B2 (en) | 2004-03-02 |
Family
ID=17231586
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP25202894A Expired - Fee Related JP3501379B2 (en) | 1994-10-11 | 1994-10-18 | Image sensor with light source |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP3501379B2 (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008153427A (en) * | 2006-12-18 | 2008-07-03 | Hitachi Displays Ltd | High sensitive optical sensor element and optical sensor device using it |
EP3529648A4 (en) * | 2016-10-20 | 2020-06-10 | 3M Innovative Properties Company | Device optical window camouflage |
-
1994
- 1994-10-18 JP JP25202894A patent/JP3501379B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JPH08116403A (en) | 1996-05-07 |
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