JP3475680B2 - Frame type crystal resonator and device element using the same - Google Patents
Frame type crystal resonator and device element using the sameInfo
- Publication number
- JP3475680B2 JP3475680B2 JP30141096A JP30141096A JP3475680B2 JP 3475680 B2 JP3475680 B2 JP 3475680B2 JP 30141096 A JP30141096 A JP 30141096A JP 30141096 A JP30141096 A JP 30141096A JP 3475680 B2 JP3475680 B2 JP 3475680B2
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- Japan
- Prior art keywords
- frame
- crystal
- type crystal
- type
- device element
- Prior art date
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Description
【０００１】[0001]
【発明の属する技術分野】本発明は、耐落下衝撃性を向
上させた枠型水晶振動子及びそれをパッケージに収納し
たデバイス素子に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a frame-type crystal unit having improved drop impact resistance and a device element having the frame-type unit mounted in a package.
【０００２】[0002]
【従来の技術】近年、コードレスフォン，携帯電話，ポ
ケットベル等の移動体通信分野の普及が著しい。これら
移動体通信機器に使用される発振用，水晶フィルタ用等
の水晶振動子は高周波対応の物が多く、またその特性
上、高い耐落下衝撃性が要求される。2. Description of the Related Art In recent years, the field of mobile communications such as cordless phones, mobile phones, and pagers has been remarkably spread. Many of the crystal oscillators for oscillation and crystal filters used in these mobile communication devices are compatible with high frequencies, and due to their characteristics, high drop impact resistance is required.
【０００３】更に、昨今、水晶振動子の高周波化，小型
化，高精度化，高安定化に伴い水晶振動子の製造を半導
体の製造工法であるフォトリソグラフイ・エッチングを
用いて行うことが盛んになってきた。これは、従来のブ
レードソーやワイヤーソーによる結晶の機械的切断に代
わって、任意の形状のマスクを用いてフォトリソ加工
し、不要の結晶部分をウェットエッチングにて溶解除去
する方法である。Further, in recent years, with the increasing frequency of crystal oscillators, miniaturization, higher precision, and higher stability, it has become popular to manufacture crystal oscillators using photolithography etching, which is a semiconductor manufacturing method. Has become. This is a method of performing photolithography using a mask of an arbitrary shape and dissolving and removing unnecessary crystal parts by wet etching, instead of mechanical cutting of crystals by a conventional blade saw or wire saw.
【０００４】一方、広い温度領域に対して発振周波数の
安定した水晶振動子を得るには一般にＡＴカットの水晶
が用いられるが、ＡＴカット水晶の発振周波数は厚みと
反比例するため、高周波の発振を得るためにはブランク
を非常に薄くする必要がある。On the other hand, an AT-cut crystal is generally used to obtain a crystal unit having a stable oscillation frequency over a wide temperature range. However, since the oscillation frequency of an AT-cut crystal is inversely proportional to the thickness, a high-frequency oscillation is generated. The blank needs to be very thin to obtain.
【０００５】周波数：ｆ＝１６６５／水晶厚み
機械加工による水晶の薄板化には取扱いの関係で限界が
あるが、前述のフォトリソグラフイ・エッチングを用い
れば、振動部分のみをエッチングにより薄板化すること
で１００ＭＨｚ以上の高周波を基本波で得ることも可能
である。この工程に従えば、
（１）加工精度が従来の機械加工に比べて優れている。
（２）任意の形状のマスクに従って加工ができる。
（３）高周波の基本波も薄板化エッチングにより得るこ
とができる。
等の利点が上げられる。Frequency: f = 1665 / crystal thickness There is a limit to the thinning of the crystal by mechanical processing due to the handling, but if the photolithography etching is used, only the vibrating part can be thinned by etching. It is also possible to obtain a high frequency of 100 MHz or more as a fundamental wave. According to this process, (1) processing accuracy is superior to that of conventional machining. (2) It can be processed according to a mask having an arbitrary shape. (3) A high frequency fundamental wave can also be obtained by thinning etching. The advantages such as
【０００６】図４にフォトリソ技術により製作した水晶
振動子の見取図を示し、図５にその振動子をシリンダ型
パッケージに収納した場合の支持構造を示す。FIG. 4 shows a sketch of a crystal oscillator manufactured by the photolithography technique, and FIG. 5 shows a supporting structure when the oscillator is housed in a cylinder type package.
【０００７】図４，図５において、１は水晶振動子、１
1はそのエッチングにより薄板化された振動部、１2は枠
部、２1，２2は振動部に施された電界を発生させる電
極、３1，３2は電極の端子部、５はシリンダ型パッケー
ジのベース、７1，７2はベース外側の端子、６1，６2は
端子７1，７2と一体のベース内側のリード、４1，４2は
水晶振動子１をその端子部３1，３2においてパッケージ
のリード６1，６2に接着固定しているドータイトであ
る。In FIGS. 4 and 5, 1 is a crystal oscillator, 1
1 is vibrating part which is thinned by its etching, 1 2 the frame section, 2 1, 2 2 electrodes for generating an electric field that is applied to the vibrating unit, 3 1, 3 2 terminal portion of the electrode, the 5 cylinder Type package base, 7 1 and 7 2 are terminals outside the base, 6 1 and 6 2 are leads inside the base integrated with the terminals 7 1 and 7 2 and 4 1 and 4 2 are the crystal units 1 at their terminal portions. 3 1 is a Dotite that adheres and fixes the 3 2 package leads 61 and 62 to 2.
【０００８】[0008]
【発明が解決しようとする課題】上記従来の移動体通信
機器に使用される水晶振動子は、移動体製品の仕様とし
て高い耐落下衝撃性及び高周波化が要求されている。The crystal unit used in the conventional mobile communication equipment is required to have high drop impact resistance and high frequency as specifications of mobile products.
【０００９】しかしながら、一般に用いられるＡＴカッ
ト水晶において発振周波数は厚みに反比例する関係にあ
り、従来水晶振動子には機械加工による薄板化加工によ
る限界と加工後のブランクのサポート方法に問題があ
り、高周波化と耐落下衝撃性を十分満足しているとは言
い難い状態である。However, in the generally used AT-cut crystal, the oscillation frequency is inversely proportional to the thickness, and the conventional crystal resonator has problems in the limit of thinning by machining and the method of supporting the blank after machining. It is difficult to say that the high frequency and drop impact resistance are sufficiently satisfied.
【００１０】一般に、自由落下（硬質木板上）で１．５
ｍ×１０回以上の耐落下衝撃性の仕様が要求されてい
る。Generally, 1.5 in free fall (on a hard wood board)
Specifications of drop impact resistance of m × 10 times or more are required.
【００１１】本発明は、従来のこのような問題点に鑑み
てなされたものであり、その目的とするところは、耐落
下衝撃性の仕様を十分満足することのできる水晶振動子
及びそれを用いたデバイス素子を提供することにある。The present invention has been made in view of the above problems of the prior art, and an object of the present invention is to provide a crystal oscillator which can sufficiently satisfy the specifications of drop impact resistance and a crystal oscillator using the same. To provide the device element that was used.
【００１２】[0012]
【課題を解決するための手段】本発明の枠型水晶振動子
は、水晶基板の周囲に枠部が残るように中央部分を薄板
エッチングにより薄板化して振動部とした枠型水晶振動
子において、前記枠部の内側下部のコーナ部分に０．２
ｍｍ以上の内Ｒ面又は内Ｃ面を設けたものである。また
は、前記枠型水晶振動子において、水晶基板の縦方向の
長さＡと枠部の下側枠の縦方向の幅ａ1との比ａ1／Ａを
２５％以上とし、前記水晶基板の長さＡと枠部の上側枠
の縦方向の幅ａ2との比ａ2／Ａを２０％以下とし、水晶
基板の横方向の長さＢと枠部の左側及び右側枠の横方向
の幅ｂとの比ｂ／Ｂを１５％以上としたものである。 A frame-type crystal unit according to the present invention
Thin plate the central part so that the frame remains around the quartz substrate.
In a frame-type crystal unit, which is made into a vibrating portion by thinning it by etching , 0.2
The inner R surface or the inner C surface of mm or more is provided. Alternatively, in the frame-type crystal unit, the ratio a 1 / A of the vertical length A of the crystal substrate to the vertical width a 1 of the lower frame of the frame is set to 25% or more, The ratio a 2 / A between the length A and the vertical width a 2 of the upper frame of the frame portion is set to 20% or less, and the horizontal length B of the crystal substrate and the horizontal direction of the left and right frames of the frame portion The ratio b / B to the width b is set to 15% or more.
【００１３】[0013]
【発明の実施の形態】図１に枠型水晶振動子の枠形状を
示す。図中、１は水晶振動子、１1は振動部（薄板エッ
チングによる薄板部）、１2は枠部、２は電極、３は電
極の端子部を示す。DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 shows the frame shape of a frame-type crystal unit. In the figure, 1 is a crystal oscillator, 1 1 vibrating portion (thin portion by the thin etch), 1 2 the frame section, 2 electrode, 3 denotes a terminal portion of the electrode.
【００１４】[0014]
【表１】 [Table 1]
【００１５】水晶振動子として表１に示すような枠形状
及び面加工の試料（従来例，実施例１〜１０）を作っ
た。図１および表１において、Ａは水晶振動子の縦方向
の長さ、Ｂは横方向の幅、ａ1は下側枠の幅、ａ2は上側
枠の幅、ｂは左右の枠の幅を示す。また、表１のＬ，
Ｒ，Ｃは図１の枠部の内側下部のコーナ部分イ，ロの面
加工を示すもので、Ｌは枠１2のコーナ部分イ，ロの角
度を直角形成するための直角加工したもの、Ｒ及びＣは
それぞれコーナ部分に内Ｒ面及びＣ面を形成するための
薄板エッチングの角のＲ面加工及びＣ面加工したものを
示す（図２）。As crystal oscillators, samples having frame shapes and surface processings (conventional examples, Examples 1 to 10) as shown in Table 1 were prepared. In FIG. 1 and Table 1, A is the length of the crystal unit in the vertical direction, B is the width in the horizontal direction, a 1 is the width of the lower frame, a 2 is the width of the upper frame, and b is the width of the left and right frames. Indicates. Also, L in Table 1
R, those C not indicate corner portion of the inner bottom of the frame portion of FIG. 1 b, the surface processing of the B, L is obtained by quadrature processing to a right angle forming the corner portion b, the angle of the B frame 1 2, R and C indicate the R-face processed and C-face processed corners of the thin plate etching for forming the inner R-face and the C-face at the corner portion, respectively (FIG. 2).
【００１６】上記試料は水晶基板に８０μｍのものを使
用し、電極を付けて１５０ＭＨ帯の枠型高周波基本波振
動子とし、従来同様にシリンダー型パッケージ内にドー
タイトを用いて接着固定した。The sample used was a quartz substrate having a thickness of 80 μm, and electrodes were attached to form a frame type high frequency fundamental wave oscillator of 150 MH band, which was adhered and fixed in a cylinder type package using dotite as in the conventional case.
【００１７】表１に示した従来例，実施例１〜１０のパ
ッケージされた各水晶振動子を仕様に基づいて落下試験
をした。The packaged crystal units of the conventional example and Examples 1 to 10 shown in Table 1 were subjected to a drop test based on the specifications.
【００１８】従来例の枠形状においては耐落下特性は７
５ｃｍ×５回程度しかなく、また、実施例１，３，５，
６のものは、１．５×１０回の落下衝撃試験に耐えられ
なかった。それらのものは何れも図３に示す劈開部分で
劈開しており、水晶振動子の枠部内側の下部コーナ部分
に応力が集中したためと考えられる。In the conventional frame shape, the drop resistance is 7
Only about 5 cm × 5 times, and in Examples 1, 3, 5,
No. 6 could not withstand a drop impact test of 1.5 × 10 times. It is considered that all of them were cleaved at the cleavage portion shown in FIG. 3, and stress was concentrated on the lower corner portion inside the frame portion of the crystal unit.
【００１９】表１の実施例１〜６の落下試験の結果から
みて、１．５ｍ×１０回以上の耐落下衝撃性を満足させ
るには、以下の枠形状を採用する必要があることがわか
った。
（１）枠形状の辺比をａ1／Ａ＝２５％以上
（２）枠形状の辺比をａ2＝／Ａ＝２０％以下
（３）枠形状の辺比をｂ／Ｂ＝１５％以上。From the results of the drop tests of Examples 1 to 6 in Table 1, it was found that the following frame shapes must be adopted to satisfy the drop impact resistance of 1.5 m × 10 times or more. It was (1) The side ratio of the frame shape is a 1 / A = 25% or more (2) The side ratio of the frame shape is a 2 = / A = 20% or less (3) The side ratio of the frame shape is b / B = 15% that's all.
【００２０】更に、実施例７〜１０の落下試験の結果か
らみて、耐落下衝撃性の向上を求めるときは、上記辺比
形状に加えて、図３の応力集中部分とみられる図１の
イ，ロ部分における薄板エッチングの角を０．２ｍｍ以
上のＲ面加工あるいはＣ面加工構造を採用する必要があ
ることがわかった。Furthermore, in view of the results of the drop tests of Examples 7 to 10, when it is desired to improve the drop impact resistance, in addition to the above side ratio shape, the stress concentration portion of FIG. It was found that it is necessary to adopt a R-face processing or C-face processing structure in which the angle of the thin plate etching in the portion B is 0.2 mm or more.
【００２１】以上の実施例においては全て水晶振動子を
用いたが、ＭＣＦ（ＭＯＮＯＬＩＴＨＩＣ ＣＲＹＳＴ
ＡＬ ＦＩＬＴＥＲ）においても同様の効果が得られ
る。In all of the above embodiments, the crystal oscillator was used, but MCF (MONOLITHIC CRYST) was used.
The same effect can be obtained in AL FILTER).
【００２２】更に、実施例については全てシリンダー型
パッケージを用いたが表面実装型（ＳＭＤ）型パッケー
ジにおいても同様あるいはそれ以上の効果があった。Further, in all the examples, the cylinder type package is used, but the surface mount type (SMD) type package also has the same or higher effect.
【００２３】なお、実施例では水晶基板として８０μｍ
ｍのものを使用したが、４０〜３００μｍのものも本発
明が同様に適用できると考えられる。In the embodiment, the crystal substrate is 80 μm.
However, it is considered that the present invention can be similarly applied to those having a thickness of 40 to 300 μm.
【００２４】[0024]
【発明の効果】本発明は、上述のとおり構成されている
ので、次に記載する効果を奏する。Since the present invention is configured as described above, it has the following effects.
【００２５】（１）耐落下衝撃性が著しく向上した水晶
振動子が得られる。(1) It is possible to obtain a crystal resonator having significantly improved drop impact resistance.
【００２６】（２）水晶基板を薄板エッチングのフォト
マスクの形状を変えるだけでできる。(2) The quartz substrate can be formed by simply changing the shape of the photomask for thin plate etching.
【図１】枠型水晶振動子の枠形状説明図。FIG. 1 is an explanatory view of a frame shape of a frame-type crystal oscillator.
【図２】図１のイ，ロ部分の拡大図。FIG. 2 is an enlarged view of portions a and b in FIG.
【図３】落下試験による水晶振動子の劈開箇所説明図。FIG. 3 is an explanatory view of a cleavage portion of a crystal unit by a drop test.
【図４】フォトリソ技術により試作した水晶振動子の見
取図。FIG. 4 is a sketch of a crystal unit prototyped by photolithography technology.
【図５】シリンダ型水晶振動子の支持構造説明図。FIG. 5 is an explanatory view of a supporting structure of a cylinder type crystal unit.
１…水晶振動子 １1…振動部（薄板部） １2…枠部 ２，２1，２2…電極 ３，３1，３2…電極の端子部 ４1，４2…ドータイト ５…パッケージのペース ６1，６2…ベース内側のリード ７1，７2…ベース外側の端子。1 ... Crystal oscillator 1 1 ... Vibration part (thin plate part) 1 2 ... Frame part 2, 2 1 , 2 2 ... Electrode 3, 3 1 , 3 2 ... Electrode terminal part 4 1 , 4 2 ... DOTITE 5 ... Package Pace 6 1 , 6 2 ... Leads inside the base 7 1 , 7 2 ... Terminals outside the base.
───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 平８−228124（ＪＰ，Ａ) 特開 平８−228122（ＪＰ，Ａ) 実開 平２−57625（ＪＰ，Ｕ) (58)調査した分野(Int.Cl.7，ＤＢ名) H03H 9/00 - 9/125 H03H 9/54 - 9/60 ─────────────────────────────────────────────────── ─── Continuation of the front page (56) References JP-A-8-228124 (JP, A) JP-A-8-228122 (JP, A) Fukuihei 2-57625 (JP, U) (58) Field (Int.Cl. 7 , DB name) H03H 9/00-9/125 H03H 9/54-9/60
Claims (5)
部分を薄板エッチングにより薄板化して振動部とした枠
型水晶振動子において、前記枠部の内側下部のコーナ部分に０．２ｍｍ以上の内
Ｒ面又は内Ｃ面を設けた ことを特徴とする枠型水晶振動
子。1. A frame-type crystal resonator in which a central part is thinned by thin plate etching to form a vibrating part so that a frame part remains around a quartz substrate, and a corner part of an inner lower part of the frame part is 0.2 mm or more. Of
A frame-type crystal unit provided with an R surface or an inner C surface .
て、 水晶基板の縦方向の長さＡと枠部の下側枠の縦方向の幅
ａ1との比ａ1／Ａを２５％以上とし、前記水晶基板の長
さＡと枠部の上側枠の縦方向の幅ａ2との比ａ2／Ａを２
０％以下とし、水晶基板の横方向の長さＢと枠部の左側
及び右側枠の横方向の幅ｂとの比ｂ／Ｂを１５％以上と
したことを特徴とする枠型水晶振動子。2. The frame-type crystal unit according to claim 1.
Te, the ratio a 1 / A of the longitudinal width a 1 of the lower frame longitudinal length A and the frame portion of the quartz substrate was 25% or more, above the length A and the frame portion of the quartz substrate The ratio a 2 / A to the vertical width a 2 of the frame is 2
A frame-type crystal resonator characterized in that the ratio b / B of the lateral length B of the crystal substrate to the lateral widths b of the left and right frames of the frame is 15% or more. .
の枠型水晶振動子が、モノリシッククリスタルフイルタ
に適用されていることを特徴とする水晶振動子。3. The method according to claim 1 or 2.
The crystal oscillator characterized in that the frame-type crystal oscillator of is applied to a monolithic crystal filter.
の枠型水晶振動子を、シリンダ型パッケージに収納して
構成したことを特徴とするデバイス素子。4. The method according to any one of claims 1 to 3.
The frame-type crystal unit of is stored in a cylinder-type package.
A device element characterized by being configured .
の枠型水晶振動子を、表面実装型パッケージに収納収納
して構成したことを特徴とするデバイス素子。5. The method according to any one of claims 1 to 3.
Storage storage of a frame-type quartz crystal resonator, the surface-mount package
A device element characterized by being configured as described above .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30141096A JP3475680B2 (en) | 1996-11-13 | 1996-11-13 | Frame type crystal resonator and device element using the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30141096A JP3475680B2 (en) | 1996-11-13 | 1996-11-13 | Frame type crystal resonator and device element using the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH10145179A JPH10145179A (en) | 1998-05-29 |
| JP3475680B2 true JP3475680B2 (en) | 2003-12-08 |
Family
ID=17896548
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP30141096A Expired - Fee Related JP3475680B2 (en) | 1996-11-13 | 1996-11-13 | Frame type crystal resonator and device element using the same |
Country Status (1)
| Country | Link |
|---|---|
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Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006121441A (en) * | 2004-10-21 | 2006-05-11 | Nippon Dempa Kogyo Co Ltd | Method for manufacturing crystal oscillator, and crystal oscillator |
| JP5533213B2 (en) * | 2010-05-10 | 2014-06-25 | セイコーエプソン株式会社 | Vibrating piece, vibrator and oscillator |
| JP5797961B2 (en) | 2011-07-21 | 2015-10-21 | 日本電波工業株式会社 | Piezoelectric vibrating piece and piezoelectric device |
| JP2014007538A (en) * | 2012-06-25 | 2014-01-16 | Daishinku Corp | Quartz vibration device |
-
1996
- 1996-11-13 JP JP30141096A patent/JP3475680B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH10145179A (en) | 1998-05-29 |
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