JP3415527B2 - Resistance change type infrared sensor element temperature correction method, resistance change type infrared sensor provided with temperature correction means, and imaging device - Google Patents
Resistance change type infrared sensor element temperature correction method, resistance change type infrared sensor provided with temperature correction means, and imaging deviceInfo
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- JP3415527B2 JP3415527B2 JP35764599A JP35764599A JP3415527B2 JP 3415527 B2 JP3415527 B2 JP 3415527B2 JP 35764599 A JP35764599 A JP 35764599A JP 35764599 A JP35764599 A JP 35764599A JP 3415527 B2 JP3415527 B2 JP 3415527B2
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- infrared sensor
- resistance change
- change type
- sensor
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Description
【発明の詳細な説明】Detailed Description of the Invention
【０００１】[0001]
【発明の属する技術分野】本発明は、センサ出力の温度
補正方法並びにこの温度補正機能を具備した抵抗変化型
赤外線センサに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a sensor output temperature correction method and a resistance change type infrared sensor having this temperature correction function.
【０００２】[0002]
【従来の技術】ボロメータで代表される抵抗変化型赤外
線センサは、センサに入射する赤外光の入射パワーの強
度によって変化する温度を、温度によって抵抗値が変化
する温度センサの抵抗値変化によって検出するものであ
る。そして、２次元マトリック状に配列された抵抗変化
型赤外線センサにバイアス電流を印加し、抵抗値変化を
電圧変化に変換し、各センサ素子の電圧をシフトレジス
タによって転送して出力を取り出すタイプの２次元セン
サを、抵抗変化型フォーカルプレーンアレイ赤外線セン
サと呼び、被写体の温度分布をリアルタイムに撮像する
赤外線撮像カメラに広く使われている。2. Description of the Related Art A resistance change type infrared sensor represented by a bolometer detects a temperature that changes depending on the intensity of incident power of infrared light incident on the sensor by detecting a change in resistance value of a temperature sensor whose resistance value changes according to temperature. To do. Then, a bias current is applied to the resistance change type infrared sensors arranged in a two-dimensional matrix, the resistance value change is converted into a voltage change, and the voltage of each sensor element is transferred by a shift register to obtain an output. The dimension sensor is called a resistance change type focal plane array infrared sensor, and is widely used for infrared imaging cameras that image the temperature distribution of a subject in real time.
【０００３】この抵抗変化型フォーカルプレーンアレイ
赤外線センサは、通常、各画素毎のセンサの抵抗ばらつ
きによって発生するるＦＰＮ（固定パターンノイズ：Ｆ
ｉｘｅｄ Ｐａｔｔｅｒｎ Ｎｏｉｓｅ）をもってお
り、均一な赤外線光を入力した場合でもこのＦＰＮが撮
像信号に現れるため、撮像信号に含まれるＦＰＮを除去
する必要がある。In this resistance change type focal plane array infrared sensor, an FPN (fixed pattern noise: F) is usually generated due to a resistance variation of the sensor for each pixel.
Since this FPN appears in the image pickup signal even when uniform infrared light is input, it is necessary to remove the FPN included in the image pickup signal.
【０００４】このＦＰＮを除去する方法として、一般的
には均一の赤外線入力条件下で各センサ固有のＦＰＮデ
ータを取得してメモリに記憶させ、入力画像データから
記憶しておいたＦＰＮデータを減算することにより、Ｆ
ＰＮを除去した画像データを得る方法がある。As a method for removing this FPN, generally, FPN data unique to each sensor is acquired under uniform infrared input conditions and stored in a memory, and the stored FPN data is subtracted from the input image data. By doing, F
There is a method of obtaining image data with PN removed.
【０００５】[0005]
【０００６】[0006]
【発明が解決しようとする課題】しかし、上記のような
従来の方式では、基板温度が一定である場合にはＦＰＮ
を除去することができるが、センサの基板温度が変動し
た場合、基板温度の変動によってもＦＰＮが変動し、変
動分が画面に現れ画質を劣化させるため、センサの基板
温度を高精度に一定に保つ手段が必要であった。また、
センサの基板温度が変わると、赤外線光に対する感度自
体も変動するため、これを補正するために可変利得増幅
器が必要となっていた。また、センサの動作温度を高精
度に一定に保つ手段を持たない場合には、センサの動作
温度が変動する度にＦＰＮデータを取り直す必要があっ
た。本発明の目的は、周囲温度が或る一定温度にてＦＰ
Ｎを除去し、センサの基板温度が変動した場合でも、セ
ンサ基板温度を常に一定に保つ手段を必要とせずに、Ｆ
ＰＮ変動分が画面に現れることによる画質の劣化を防
ぎ、なおかつ赤外光に対する感度の変動を防ぐことがで
きる、温度補正方法とこの方法に基づく補正手段を具備
した抵抗変化型赤外線センサを提供することにある。 However, as described above,
In the conventional method, when the substrate temperature is constant, the FPN
Can be removed, but the substrate temperature of the sensor
The FPN also fluctuates due to fluctuations in the substrate temperature.
Motions appear on the screen and deteriorate the image quality.
A means for keeping the temperature constant with high precision was required. Also,
When the sensor substrate temperature changes, the sensitivity to infrared light
Since the body also fluctuates, variable gain amplification is used to correct this.
I needed a container. In addition, the operating temperature of the sensor
If there is no means to keep it constant every time, the operation of the sensor
It is necessary to collect FPN data every time the temperature changes.
It was The object of the present invention is to provide FP at a certain ambient temperature.
Even when N is removed and the substrate temperature of the sensor fluctuates , F does not require a means for always keeping the sensor substrate temperature constant.
Provided is a resistance change infrared sensor equipped with a temperature correction method and a correction means based on the temperature correction method, which can prevent deterioration of image quality due to PN fluctuation appearing on a screen and can prevent fluctuation of sensitivity to infrared light. Especially.
【０００７】[0007]
【課題を解決するための手段】本発明の請求項１に係わ
る発明の抵抗変化型赤外線センサ素子の温度補正方法
は、特定の周囲温度で固定パターンノイズを除去し、前
記周囲温度が変化した時、赤外線入力が遮断されている
画素であるオプティカルブラックの出力信号の振幅の平
均値に基づき、全画素に印加されるバイアス電流を一括
に制御して、周囲温度の変動により発生する固定パター
ンノイズの変動を抑圧することを特徴とする。また、本
発明の請求項２に係わる発明の抵抗変化型赤外線センサ
は、赤外線入力が遮断されている画素であるオプティカ
ルブラックと赤外線を感知する画素である有効画素とを
有する抵抗変化型赤外線センサ素子と、特定の周囲温度
で、均一の赤外線入力条件下にて前記各有効画素固有の
固定パターンノイズデータを取得してメモリに記憶さ
せ、前記抵抗変化型赤外線センサ素子出力データから記
憶しておいた前記固定パターンノイズデータを減算する
ことにより、前記有効画素の前記固定パターンノイズを
除去する手段と、前記抵抗変化型赤外線センサの出力信
号のうち複数の前記オプティカルブラックの出力信号の
振幅の平均値を算出する平均値算出手段と、前記平均値
算出手段の出力から前記赤外線センサを構成する全画素
に印加するバイアス電流を一括に制御するバイアス制御
手段を含み、前記抵抗変化型赤外線センサ素子の周囲温
度の変動により発生する前記抵抗変化型赤外線センサの
固定パターンノイズの変動を抑圧する温度補正機能を具
備したことを特徴とする。また、本発明の請求項３に係
わる発明の撮像装置は、前記請求項２記載の抵抗変化型
赤外線センサを備えたことを特徴とする。According to a first aspect of the present invention, there is provided a temperature correction method for a resistance change type infrared sensor element, which removes fixed pattern noise at a specific ambient temperature.
When serial ambient temperature changes, based on the average value of the amplitude of the output signal of the optical black are pixels infrared input is blocked, collectively bias current applied to all the pixels
Control and control to, characterized by suppressing the variation of the fixed pattern noise generated by variations in ambient temperature. The resistance change type infrared sensor of the invention according to claim 2 of the present invention has a resistance change type infrared sensor element having optical black which is a pixel in which infrared input is blocked and an effective pixel which is a pixel for detecting infrared rays. And the specific ambient temperature
In the uniform infrared input condition,
Fixed pattern noise data is acquired and stored in memory.
The resistance change type infrared sensor element output data.
Subtract the remembered fixed pattern noise data
This reduces the fixed pattern noise of the effective pixel.
Means for removing, an average value calculating means for calculating an average value of the amplitudes of the output signals of the plurality of optical blacks out of the output signals of the resistance change type infrared sensor, and the infrared sensor from the output of the average value calculating means. Bias control means for collectively controlling the bias current applied to all the constituent pixels is included to suppress fluctuations in fixed pattern noise of the resistance change infrared sensor caused by fluctuations in ambient temperature of the resistance change infrared sensor element. It is characterized by having a temperature correction function. An image pickup apparatus according to a third aspect of the present invention includes the resistance change type infrared sensor according to the second aspect.
【０００８】[0008]
【発明の実施の形態】図１は本発明の一実施例である温
度補正装置付き赤外線センサのブロック図であり、セン
サ１、Ａ／Ｄコンバータ２、平均値算出回路３、Ｄ／Ａ
コンバータ４、バイアス制御回路５、ＦＰＮ除去回路６
によって構成されている。1 is a block diagram of an infrared sensor with a temperature correction device according to an embodiment of the present invention. The sensor 1, an A / D converter 2, an average value calculation circuit 3, and a D / A are shown.
Converter 4, bias control circuit 5, FPN removal circuit 6
It is composed by.
【０００９】センサ１は抵抗変化型フォーカルプレーン
アレイ赤外線センサで、その基本的な構成とバイアス制
御回路５とを図２に示す。センサ基板上に抵抗変化型の
センサ素子１１が２次元に配置されている。センサの各
素子１１は外部から入射される赤外線の強度に応じた温
度変化をし、その温度に対応した抵抗値となる。したが
って、センサの各素子にバイアス信号２５を印加するこ
とにより、各センサ素子の抵抗値に対応した電圧は、垂
直シフトレジスタ１３によって画素スイッチ１５を開閉
し、また、水平シフトレジスタ１４によって水平スイッ
チ１６を開閉することによって順次読み出され、センサ
出力２０として時系列に出力される。The sensor 1 is a variable resistance focal plane array infrared sensor, and its basic configuration and bias control circuit 5 are shown in FIG. A resistance change type sensor element 11 is two-dimensionally arranged on a sensor substrate. Each element 11 of the sensor changes in temperature according to the intensity of infrared rays incident from the outside, and has a resistance value corresponding to the temperature. Therefore, by applying the bias signal 25 to each element of the sensor, the voltage corresponding to the resistance value of each sensor element opens and closes the pixel switch 15 by the vertical shift register 13 and the horizontal switch 16 by the horizontal shift register 14. Are sequentially read by opening and closing, and output as sensor output 20 in time series.
【００１０】センサ素子１１の温度はそれぞれの素子が
受ける赤外線光の強度によって変化するが、センサ基板
の温度の影響も受ける。センサの基板温度が、センサ周
囲温度にほぼ等しい場合、外部赤外線が遮断されている
ＯＢ領域（オプティカル・ブラック領域）１８のセンサ
出力により、センサ基板温度を検知することができる。
図２では２次元アレイの第１列の画素列ををＯＢ画素領
域１８、２列目以降を有効画素領域１９としている。The temperature of the sensor element 11 changes depending on the intensity of infrared light received by each element, but is also affected by the temperature of the sensor substrate. When the substrate temperature of the sensor is substantially equal to the sensor ambient temperature, the sensor substrate temperature can be detected by the sensor output of the OB region (optical black region) 18 in which the external infrared rays are blocked.
In FIG. 2, the first pixel row of the two-dimensional array is the OB pixel area 18, and the second and subsequent rows are the effective pixel areas 19.
【００１１】図１の本発明の実施例の温度補正装置付き
赤外線センサのブロック図に戻り、温度補正装置の動作
を説明する。センサ１からのセンサ出力２０は、Ａ／Ｄ
コンバータ２よってディジタル信号に変換され、ディジ
タル型のＦＰＮ除去回路６によって画素毎の抵抗変化値
のばらつきに起因するＦＰＮが除去され撮像信号２１と
して出力される。このＦＰＮの除去の動作は、前述の従
来技術の説明で述べた、均一の赤外線入力条件下で各セ
ンサ固有のＦＰＮデータを取得してメモリに記憶させ、
入力画像データから記憶しておいたＦＰＮデータを減算
することにより、ＦＰＮを除去する方法である。Returning to the block diagram of the infrared sensor with a temperature compensator of the embodiment of the present invention in FIG. 1, the operation of the temperature compensator will be described. The sensor output 20 from the sensor 1 is the A / D
The converter 2 converts the digital signal into a digital signal, and the digital FPN removing circuit 6 removes the FPN caused by the variation in the resistance change value for each pixel and outputs the image signal 21. This FPN removal operation is performed by acquiring the FPN data unique to each sensor and storing it in the memory under the uniform infrared input condition described in the above description of the prior art.
This is a method of removing the FPN by subtracting the stored FPN data from the input image data.
【００１２】センサ素子個々のばらつきに起因するＦＰ
Ｎは、上記のＦＰＮ除去回路６によって取り除けるが、
センサ基板温度の変化によるＦＰＮのドリフトは除去で
きない。図３にバイアス電流が一定な場合のＦＰＮデー
タの一例を示す。バイアス電流が一定の時は、センサの
温度変動によってＦＰＮのレベルも変動する。本実施例
では、センサの温度変動によって生じるＦＰＮのレベル
の変動を抑圧するために、ＯＢ画素のデータからセンサ
のバイアス電流を制御する信号に帰還する帰還制御系を
構成している。FP caused by variations in individual sensor elements
N can be removed by the FPN removal circuit 6 described above,
FPN drift due to changes in the sensor substrate temperature cannot be removed. FIG. 3 shows an example of FPN data when the bias current is constant. When the bias current is constant, the temperature of the sensor also changes the level of the FPN. In this embodiment, in order to suppress the fluctuation of the FPN level caused by the temperature fluctuation of the sensor, a feedback control system for feeding back the data of the OB pixel to the signal for controlling the bias current of the sensor is configured.
【００１３】ＯＢ画素領域を含め、センサ各素子には出
力特性のばらつきがあるので、ＯＢデータ２２から、平
均値算出回路３によってＯＢ画素領域全体の平均値を算
出し、平均値データ２３を出力する。この平均値をＤ／
Ａコンバータ３に入力する。Ｄ／Ａコンバータ４の出力
はバイアス制御回路４へバイアス制御信号２４として入
力する。バイアス制御回路５は入力に応じたバイアス信
号２５をセンサ１に供給する。Since there are variations in the output characteristics of each sensor element including the OB pixel area, the average value calculation circuit 3 calculates the average value of the entire OB pixel area from the OB data 22 and outputs the average value data 23. To do. This average value is D /
Input to the A converter 3. The output of the D / A converter 4 is input to the bias control circuit 4 as the bias control signal 24. The bias control circuit 5 supplies a bias signal 25 corresponding to the input to the sensor 1.
【００１４】センサ出力２０はセンサ抵抗とバイアス信
号２５の電流の大きさに比例する。センサの抵抗値はセ
ンサ基板温度によって指数関数的に変化するが、どのセ
ンサも均一な抵抗温度係数を持っていれば、センサ基板
温度の変化によるセンサ出力２０の変化と、バイアス信
号２５の変化よるセンサ出力２０の変化は同じように変
化する。つまり、バイアス信号２５を制御することによ
りセンサ基板温度変化による、ＦＰＮのドリフトを相殺
し、そのレベルを一定に保つことが可能である。図４に
バイアス電流を制御した場合のＦＰＮデータの一例を示
す。センサ温度が上昇するとＦＰＮのレベルは高くなる
が、バイアス電流を下げることにより、ＦＰＮのレベル
を一定に保たれる。逆にセンサ温度が低下した場合は、
ＦＰＮレベルが低下するので、バイアス電流を上げるこ
とにより再びＦＰＮのレベルを一定に保つことができ
る。ＯＢデータの平均値データ２３、すなわちセンサ基
板温度の電圧値をバイアス信号２５に負帰還を掛けるバ
イアス制御回路５のゲインは、予め計測して定める。The sensor output 20 is proportional to the sensor resistance and the magnitude of the current in the bias signal 25. The resistance value of the sensor changes exponentially with the temperature of the sensor substrate, but if all the sensors have a uniform temperature coefficient of resistance, it depends on the change of the sensor output 20 and the change of the bias signal 25 due to the change of the sensor substrate temperature. The change in sensor output 20 changes similarly. That is, by controlling the bias signal 25, it is possible to cancel the drift of the FPN due to the temperature change of the sensor substrate and keep the level constant. FIG. 4 shows an example of FPN data when the bias current is controlled. The FPN level rises as the sensor temperature rises, but the FPN level can be kept constant by lowering the bias current. Conversely, if the sensor temperature drops,
Since the FPN level decreases, it is possible to keep the FPN level constant again by increasing the bias current. The average value data 23 of the OB data, that is, the gain of the bias control circuit 5 that negatively feeds back the voltage value of the sensor substrate temperature to the bias signal 25 is measured and determined in advance.
【００１５】そして、センサ出力２０はＡ／Ｄ変換後、
ＦＰＮ除去回路６により、上述の予め取得されているＦ
ＰＮデータを減算され、ＦＰＮ成分が取り除かれる。こ
のように、センサ温度が変動しても、ＦＰＮの大きさは
一定に保たれ、後のＦＰＮ除去回路６を通すことによっ
て、ＦＰＮ成分が画面に現れることがない。またセンサ
抵抗とバイアス電流の積が、センサ周囲温度が変動して
も一定に保たれようと制御される為、赤外光に対する感
度の変動を防ぐ。After the sensor output 20 is A / D converted,
By the FPN removing circuit 6, the previously obtained F is obtained.
The PN data is subtracted and the FPN component is removed. Thus, even if the sensor temperature fluctuates, the size of the FPN is kept constant and the FPN component does not appear on the screen by passing through the FPN removing circuit 6 later. Further, since the product of the sensor resistance and the bias current is controlled so as to be kept constant even if the ambient temperature of the sensor fluctuates, the fluctuation of sensitivity to infrared light is prevented.
【００１６】図５は、本発明の別なる実施例の温度セン
サを用いた温度補正回路のブロック図を示す。第一の実
施例ではＯＢデータの平均値から、赤外線センサの動作
温度の情報を算出しているが、ＯＢデータの代わりに熱
電対やサーミスタのような温度センサ３０を直接赤外線
センサの基板に設けて、この温度センサ３０の温度セン
サ出力２６を、バイアス制御回路４０に入力し、赤外線
センサ１のバイアス信号を制御することによっても第一
の実施例と同様の効果が期待できる。FIG. 5 shows a block diagram of a temperature correction circuit using a temperature sensor according to another embodiment of the present invention. In the first embodiment, the information on the operating temperature of the infrared sensor is calculated from the average value of the OB data. However, instead of the OB data, the temperature sensor 30 such as a thermocouple or thermistor is provided directly on the substrate of the infrared sensor. Then, the temperature sensor output 26 of the temperature sensor 30 is input to the bias control circuit 40 to control the bias signal of the infrared sensor 1, so that the same effect as that of the first embodiment can be expected.
【００１７】また、第一及び第二の実施例の温度補正手
段を備えた赤外線センサを使用することによって画質の
優れた撮像装置が得られる。Further, by using the infrared sensor provided with the temperature correction means of the first and second embodiments, an image pickup device having an excellent image quality can be obtained.
【００１８】[0018]
【発明の効果】以上説明したように、抵抗変化型赤外線
センサの出力の中に含まれるＯＢ領域の平均値を算出
し、または、抵抗変化型赤外線センサの基板に取り付け
た温度センサの出力から、ＦＰＮレベルが一定になるよ
う抵抗変化型赤外線センサのバイアス電流を制御するこ
とにより、センサ基板温度を常に一定に保つ手段を必要
とせずに、ＦＰＮ変動分が画面に現れることによる画質
の劣化を防ぎ、なおかつ赤外光に対する感度の変動を防
ぐことができる。As described above, the average value of the OB region included in the output of the resistance change type infrared sensor is calculated, or from the output of the temperature sensor attached to the substrate of the resistance change type infrared sensor, By controlling the bias current of the resistance change type infrared sensor so that the FPN level becomes constant, the deterioration of the image quality due to the FPN fluctuation appearing on the screen can be prevented without the need for means for keeping the sensor substrate temperature always constant. Moreover, it is possible to prevent fluctuations in sensitivity to infrared light.
【図１】本発明の一実施例の温度補正回路のブロック図
を示す図である。FIG. 1 is a diagram showing a block diagram of a temperature correction circuit according to an embodiment of the present invention.
【図２】本発明の実施例に用いるセンサである抵抗変化
型フォーカルプレーンアレイ赤外線センサの基本的な構
成とバイアス制御回路とを示す図である。FIG. 2 is a diagram showing a basic configuration of a variable resistance focal plane array infrared sensor which is a sensor used in an embodiment of the present invention and a bias control circuit.
【図３】バイアス電流が一定な場合のＦＰＮデータの一
例を示す図である。FIG. 3 is a diagram showing an example of FPN data when a bias current is constant.
【図４】バイアス電流を制御した場合のＦＰＮデータの
一例を示す図である。FIG. 4 is a diagram showing an example of FPN data when a bias current is controlled.
【図５】本発明の別なる実施例の温度センサを用いた温
度補正回路のブロック図を示す図である。FIG. 5 is a diagram showing a block diagram of a temperature correction circuit using a temperature sensor according to another embodiment of the present invention.
１ センサ ２ Ａ／Ｄコンバータ ３ 平均値算出回路 ４ Ｄ／Ａコンバータ ５ バイアス制御回路 ６ ＦＰＮ除去回路 １１ センサ素子 １３ 垂直シフトレジスタ １４ 水平シフトレジスタ １５ 画素スイッチ １６ 水平スイッチ １８ ＯＢ画素領域 １９ 有効画素領域 ２０ センサ出力 ２１ 撮像信号 ２２ ＯＢデータ ２３ 平均値データ ２４ バイアス制御信号 ２５ バイアス信号 ２６ 温度センサ出力 ３０ 温度センサ ４０ バイアス制御回路 1 sensor 2 A / D converter 3 Average value calculation circuit 4 D / A converter 5 Bias control circuit 6 FPN removal circuit 11 Sensor element 13 Vertical shift register 14 Horizontal shift register 15 pixel switch 16 Horizontal switch 18 OB pixel area 19 Effective pixel area 20 sensor output 21 Imaging signal 22 OB data 23 Average value data 24 Bias control signal 25 Bias signal 26 Temperature sensor output 30 temperature sensor 40 Bias control circuit
───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 平10−23335（ＪＰ，Ａ) 特開 平９−168116（ＪＰ，Ａ) 特開 平９−284652（ＪＰ，Ａ) 特開2000−39358（ＪＰ，Ａ) 特開 平10−304251（ＪＰ，Ａ) 赤外線工学−基礎と応用−，日本, （株）オーム社，1991年 ３月20日，第 １版，131 (58)調査した分野(Int.Cl.7，ＤＢ名) G01J 1/02 G01J 1/42 - 1/44 G01J 5/20 - 5/26 G01J 5/48 H04N 5/30 - 5/335 ─────────────────────────────────────────────────── ─── Continuation of the front page (56) Reference JP-A-10-23335 (JP, A) JP-A-9-168116 (JP, A) JP-A-9-284652 (JP, A) JP-A-2000-39358 (JP, A) JP 10-304251 (JP, A) Infrared engineering-Basics and applications-, Japan, Ohmsha Co., Ltd., March 20, 1991, 1st edition, 131 (58) Fields investigated (Int.Cl. 7 , DB name) G01J 1/02 G01J 1/42-1/44 G01J 5/20-5/26 G01J 5/48 H04N 5/30-5/335
Claims (3)
去し、前記周囲温度が変化した時、赤外線入力が遮断さ
れている画素であるオプティカルブラックの出力信号の
振幅の平均値に基づき、全画素に印加されるバイアス電
流を一括に制御して、前記周囲温度の変動により発生す
る前記固定パターンノイズの変動を抑圧することを特徴
とする抵抗変化型赤外線センサ素子の温度補正方法。1. Fixed pattern noise is removed at a specific ambient temperature.
Removed by to, when the ambient temperature changes, based on the average value of the amplitude of the output signal of the optical black are pixels infrared input is blocked, by controlling the bias current applied to all the pixels collectively, the A temperature correction method for a resistance change type infrared sensor element, characterized in that fluctuations of the fixed pattern noise generated due to fluctuations of ambient temperature are suppressed.
プティカルブラックと赤外線を感知する画素である有効
画素とを有する抵抗変化型赤外線センサ素子と、特定の周囲温度で、均一の赤外線入力条件下にて前記各
有効画素固有の固定パターンノイズデータを取得してメ
モリに記憶させ、前記抵抗変化型赤外線センサ素子出力
データから記憶しておいた前記固定パターンノイズデー
タを減算することにより、前記有効画素の前記固定パタ
ーンノイズを除去する手段と、 前記抵抗変化型赤外線センサの出力信号のうち複数の前
記オプティカルブラックの出力信号の振幅の平均値を算
出する平均値算出手段と、 前記平均値算出手段の出力から前記赤外線センサを構成
する全画素に印加するバイアス電流を一括に制御するバ
イアス制御手段を含み、前記抵抗変化型赤外線センサ素
子の周囲温度の変動により発生する前記抵抗変化型赤外
線センサの固定パターンノイズの変動を抑圧する温度補
正機能を具備したことを特徴とする抵抗変化型赤外線セ
ンサ。2. A resistance change type infrared sensor element having optical black, which is a pixel for which infrared input is blocked, and an effective pixel, which is a pixel for detecting infrared rays , and uniform infrared input conditions at a specific ambient temperature. At each of the above
The fixed pattern noise data unique to the effective pixel is acquired and
Memory to store the resistance change type infrared sensor element output
The fixed pattern noise data stored from the data
The fixed pattern of the effective pixel by subtracting
Means for removing the noise, an average value calculating means for calculating the average value of the amplitudes of the output signals of the plurality of optical blacks among the output signals of the resistance change type infrared sensor, and the infrared rays from the output of the average value calculating means. Bias control means for collectively controlling the bias current applied to all pixels forming the sensor is included, and fluctuations in fixed pattern noise of the resistance variable infrared sensor caused by fluctuations in ambient temperature of the resistance variable infrared sensor element are suppressed. A resistance change type infrared sensor having a temperature correction function of suppressing.
サを備えたことを特徴とする撮像装置。3. An image pickup apparatus comprising the resistance change type infrared sensor according to claim 3.
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| JP35764599A JP3415527B2 (en) | 1999-12-16 | 1999-12-16 | Resistance change type infrared sensor element temperature correction method, resistance change type infrared sensor provided with temperature correction means, and imaging device |
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| JP35764599A JP3415527B2 (en) | 1999-12-16 | 1999-12-16 | Resistance change type infrared sensor element temperature correction method, resistance change type infrared sensor provided with temperature correction means, and imaging device |
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| JP4007018B2 (en) * | 2002-02-25 | 2007-11-14 | 三菱電機株式会社 | Infrared imaging device |
| JP5028075B2 (en) | 2006-12-04 | 2012-09-19 | キヤノン株式会社 | Imaging apparatus and imaging method |
| FR2925159B1 (en) * | 2007-12-12 | 2012-04-27 | Ulis | DEVICE FOR DETECTING INFRARED RADIATION COMPRISING A RESISTIVE IMAGING BOLOMETER, SYSTEM COMPRISING A MATRIX OF SUCH A BOLOMETER, AND METHOD FOR READING AN IMAGING BOLOMETER INTEGRATED IN SUCH A SYSTEM |
| FR2936052B1 (en) * | 2008-09-16 | 2014-09-05 | Ulis | DEVICE FOR THE DETECTION OF INFRARED RADIATION COMPRISING A RESISTIVE IMAGING BOLOMETER, SYSTEM COMPRISING A MATRIX OF SUCH A BOLOMETER, AND METHOD FOR READING AN IMAGING BOLOMETER INTEGRATED IN SUCH A SYSTEM |
| US8124937B2 (en) * | 2009-01-15 | 2012-02-28 | Raytheon Company | System and method for athermal operation of a focal plane array |
| JP5827868B2 (en) * | 2011-10-25 | 2015-12-02 | 富士フイルム株式会社 | Electronic endoscope and fixed pattern noise removal method |
| JP6701881B2 (en) * | 2016-03-30 | 2020-05-27 | 富士通株式会社 | Imaging device, infrared detector, and dark current correction method for infrared detector |
| EP3985367A4 (en) * | 2019-06-12 | 2022-07-06 | Mitsubishi Electric Corporation | Infrared imaging device |
| KR102657954B1 (en) * | 2020-12-08 | 2024-04-18 | (주)유우일렉트로닉스 | Apparatus, method and computer readable medium for measuring temperature of object using compensation of board terperature |
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| JP3024532B2 (en) * | 1995-12-15 | 2000-03-21 | 日本電気株式会社 | Thermal infrared imaging device |
| JP3212874B2 (en) * | 1996-04-19 | 2001-09-25 | 日本電気株式会社 | Bolometer type infrared imaging device |
| JPH1023335A (en) * | 1996-07-05 | 1998-01-23 | Nec Corp | Infrared ray image pickup device |
| JP2970586B2 (en) * | 1997-04-24 | 1999-11-02 | 日本電気株式会社 | Imaging device |
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