JP3410655B2 - Method of manufacturing semiconductor laser device - Google Patents

Method of manufacturing semiconductor laser device

Info

Publication number
JP3410655B2
JP3410655B2 JP08418898A JP8418898A JP3410655B2 JP 3410655 B2 JP3410655 B2 JP 3410655B2 JP 08418898 A JP08418898 A JP 08418898A JP 8418898 A JP8418898 A JP 8418898A JP 3410655 B2 JP3410655 B2 JP 3410655B2
Authority
JP
Japan
Prior art keywords
layer
submount
semiconductor laser
laser device
bonding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP08418898A
Other languages
Japanese (ja)
Other versions
JPH11284281A (en
Inventor
英樹 市川
亮 辻
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP08418898A priority Critical patent/JP3410655B2/en
Publication of JPH11284281A publication Critical patent/JPH11284281A/en
Application granted granted Critical
Publication of JP3410655B2 publication Critical patent/JP3410655B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)
  • Die Bonding (AREA)
  • Semiconductor Lasers (AREA)

Description

【発明の詳細な説明】Detailed Description of the Invention

【０００１】[0001]

【発明の属する技術分野】本発明は、半導体レーザ装置
に関するもので、特に半導体レーザ素子をサブマウント
に接着する半導体レーザ装置の製造方法に関するもので
ある。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor laser device, and more particularly to a method of manufacturing a semiconductor laser device in which a semiconductor laser element is bonded to a submount.

【０００２】[0002]

【従来の技術】図５は、従来の半導体レーザ装置の断面
図である。2. Description of the Related Art FIG. 5 is a sectional view of a conventional semiconductor laser device.

【０００３】半導体レーザ素子（以下、レーザ素子とい
う）１の裏面には、メタライズ層２として、Ｍｏ層２−
１およびＡｕ層２−２がＡｕ層が下方になるように積層
されている。レーザ素子１を搭載するヒートシンクとな
るサブマウント３（たとえばＳｉＣ基板）の表面には、
メタライズ層４として全面に一様な厚さのＴｉ層４−
１，Ｐｔ層４−２，Ａｕ層４−３などが、Ａｕ層が表面
になるように積層されている。メタライズ層４の表面に
は、ダイボンドろう材５としてたとえばＡｕＳｎ層が一
部に形成されている。レーザ素子１とサブマウント３
は、ダイボンドろう材５を介して、レーザ素子１の下方
のＡｕ層２−２およびサブマウント３表面のＡｕ層４−
３が接着される。接着の方法としては、後述のように、
サブマウント３の上にレーザ素子１を載せ荷重を加え、
双方に高温の熱を加えることにより、サブマウント表面
のダイボンドろう材５が溶け、双方のメタライズ層のそ
れぞれのＡｕ層２−２および４−３と反応し接着され
る。On the back surface of a semiconductor laser element (hereinafter referred to as a laser element) 1, a Mo layer 2-as a metallization layer 2 is formed.
1 and the Au layer 2-2 are laminated so that the Au layer faces downward. On the surface of the submount 3 (for example, a SiC substrate) that serves as a heat sink on which the laser element 1 is mounted,
As the metallized layer 4, a Ti layer 4 having a uniform thickness over the entire surface 4-
1, Pt layer 4-2, Au layer 4-3, etc. are laminated so that the Au layer is on the surface. On the surface of the metallized layer 4, an AuSn layer, for example, is partially formed as the die-bonding brazing material 5. Laser device 1 and submount 3
Is an Au layer 2-2 below the laser element 1 and an Au layer 4- on the surface of the submount 3 via the die-bonding brazing material 5.
3 is glued. As a method of bonding, as described below,
Place the laser element 1 on the submount 3 and apply a load,
By applying high-temperature heat to both of them, the die-bonding brazing material 5 on the surface of the submount is melted and reacts with the Au layers 2-2 and 4-3 of both metallization layers to be bonded.

【０００４】次に、ワイヤによる配線に関しては、一方
のリード線であるＡｕワイヤ６の一端がボールボンディ
ングによりレーザ素子１の表面の電極１−１にボンディ
ングされ、他端がステムブロック部９に接続される。他
方のリード線であるＡｕワイヤ８の一端がサブマウント
のＡｕ層４−３にボールボンディングによりボンディン
グされ、他端はステムリード７に接続されている。Next, regarding the wiring by the wire, one end of the Au wire 6 which is one of the lead wires is bonded to the electrode 1-1 on the surface of the laser element 1 by ball bonding, and the other end is connected to the stem block portion 9. To be done. One end of the Au wire 8 which is the other lead wire is bonded to the Au layer 4-3 of the submount by ball bonding, and the other end is connected to the stem lead 7.

【０００５】次に半導体レーザ素子１とサブマウント３
のダイボンド工程について説明する。Next, the semiconductor laser device 1 and the submount 3
The die bonding step of will be described.

【０００６】まず、図４（ａ）に示すように、吸着コレ
ット１０で掴んだレーザ素子１を図４（ｂ）に示すよう
に、サブマウント３のダイボントろう材５の上に載せて
圧着し、ヒータブロック１２により３７５〜４２５℃で
加熱することにより、ダイボンドろう材５が溶け、レー
ザ素子１の裏面のＡｕ層２−２とサブマウント上面のＡ
ｕ層４−３にダイボンドろう材５が反応する。この際、
従来のサブマウントの上面のＡｕ層４−３は、ワイヤボ
ンド強度および接着性（以下、ワイヤボンダビリティと
いう）と配線に流れる電流値に対する配線の断面積（以
下、スクエアという）を考慮して、一般に約２０００Å
の厚みがある。この厚みが薄いとワイヤボンドが剥がれ
たり、電流が流れにくくなることにより、レーザ素子の
動作電圧が高くなり、レーザ素子１の寿命も短くなって
しまう。この厚さが厚いと、材料を多く使うことによ
り、また加工時間も長くなる。First, as shown in FIG. 4A, the laser element 1 held by the suction collet 10 is placed on the die-bonding brazing material 5 of the submount 3 and pressure-bonded as shown in FIG. 4B. By heating at 375 to 425 ° C. by the heater block 12, the die bond brazing material 5 is melted, and the Au layer 2-2 on the back surface of the laser element 1 and the A on the upper surface of the submount are
The die bond brazing material 5 reacts with the u layer 4-3. On this occasion,
The Au layer 4-3 on the upper surface of the conventional submount is generally formed in consideration of the wire bond strength and adhesiveness (hereinafter referred to as wire bondability) and the cross-sectional area of the wiring (hereinafter referred to as square) with respect to the current value flowing in the wiring. About 2000Å
There is a thickness of. If this thickness is thin, the wire bond is peeled off, and it becomes difficult for current to flow, so that the operating voltage of the laser element increases and the life of the laser element 1 also shortens. When this thickness is large, the processing time becomes long due to the use of many materials.

【０００７】接着完了後図４（ｃ）に示すように、冷却
ノズル１５，１５により冷却する。After the bonding is completed, as shown in FIG. 4 (c), cooling is performed by cooling nozzles 15, 15.

【０００８】[0008]

【発明が解決しようとする課題】以上のような従来の半
導体レーザ装置の製造方法では、サブマウント表面のＡ
ｕ層４−３の厚さは約２０００Åであり、全面にわたり
一様であった。レーザ素子とサブマウントのダイボンド
強度およびろう材とＡｕ面の濡れ性（以下、ダイボンダ
ビリティという）が最も良好となるレーザ素子接着面の
サブマウントのＡｕ面のＡｕ層の厚さと、サブマウント
へのＡｕのワイヤボンドを施す場合のワイヤボンダビリ
ティとスクエアが最も良好となる外部配線用のサブマウ
ントのＡｕ面の層厚とに大きな差があることから、双方
の最も良好となるサブマウントのＡｕ面の層厚に設定す
ることが容易でなかった。これはサブマウント３の表面
のＡｕ層が全面にわたり同じ厚さであり、これにレーザ
素子とＡｕワイヤをボンディングするからである。In the conventional method for manufacturing a semiconductor laser device as described above, the A on the surface of the submount is mounted.
The thickness of the u layer 4-3 was about 2000Å and was uniform over the entire surface. The thickness of the Au layer on the Au surface of the submount of the laser element bonding surface that provides the best die bond strength between the laser element and the submount and the wettability between the brazing material and the Au surface (hereinafter referred to as die bondability), and to the submount Since there is a large difference between the wire bondability when performing Au wire bonding and the layer thickness of the Au surface of the submount for external wiring that provides the best square, the Au surface of the submount that provides the best It was not easy to set the layer thickness. This is because the Au layer on the surface of the submount 3 has the same thickness over the entire surface, and the laser element and the Au wire are bonded to this.

【０００９】その理由は次のように考えられる。サブマ
ウント３上面のＡｕ層４−３の厚さが２０００Åでは、
図４（ｂ）のようにサブマウント３とレーザ素子１をヒ
ータブロック１２で下方から加熱（約３７５〜４２５
℃）した場合、下方のサブマウント３側のＡｕ層４−３
とダイボンドろう材５の反応が先に進んでしまうため、
上方のレーザ素子のＡｕ層２−２とダイボンドろう材５
が完全に反応して接着されない状態が起こる。その理由
として一例を挙げると、ＡｕＳｎをろう材として使用し
た場合に、その成分のＡｕ（ウェイト７０％）とＳｎ
（ウェイト３０％）の比率に対して、サブマウント３側
のＡｕ層４−３にＡｕＳｎが先に溶融することにより、
ＡｕＳｎのＡｕとＳｎの比率に対しＡｕの比率が多くな
り、ＡｕＳｎの融点温度が上昇してしまったり、また、
反応が進むにつれてＡｕＳｎの共晶化が起こり、ＡｕＳ
ｎの表面は、レーザ素子裏面のＡｕ電極と反応する前
に、既に硬化した状態になっているからと推定される。The reason is considered as follows. When the thickness of the Au layer 4-3 on the upper surface of the submount 3 is 2000Å,
As shown in FIG. 4B, the submount 3 and the laser element 1 are heated from below by the heater block 12 (about 375 to 425).
C)), the Au layer 4-3 on the lower submount 3 side
Since the reaction of the die bond brazing material 5 proceeds further,
Au layer 2-2 of upper laser element and die-bonding brazing material 5
Completely reacts and is not bonded. As an example of the reason, when AuSn is used as a brazing material, Au (weight 70%) and Sn of the components are used.
With respect to the ratio of (weight 30%), AuSn is first melted in the Au layer 4-3 on the submount 3 side,
The ratio of Au to the ratio of Au to Sn of AuSn becomes large, and the melting point temperature of AuSn rises.
As the reaction proceeds, eutecticization of AuSn occurs,
It is presumed that the surface of n has already been cured before reacting with the Au electrode on the back surface of the laser element.

【００１０】[0010]

【課題を解決するための手段】サブマウント表面のレー
ザ素子との接着面のＡｕ層の厚さを、サブマウント表面
のワイヤボンディングを行なう面のＡｕ層より薄く形成
するようにした。サブマウント表面のＡｕ層からレーザ
素子裏面のＡｕ層に熱が速く伝達され、ダイボンドろう
材が、双方に同じスピードで反応が進む。The thickness of the Au layer on the surface of the submount which is bonded to the laser element is made thinner than the thickness of the Au layer on the surface of the submount where wire bonding is performed. Heat is rapidly transferred from the Au layer on the surface of the submount to the Au layer on the back surface of the laser element, and the reaction of the die-bonding brazing material proceeds to both sides at the same speed.

【００１１】このとき、サブマウント表面のレーザ素子
との接着面のＡｕ層を、サブマウント表面のワイヤボン
ディングを行なう面のＡｕ層と連続してまたは別に形成
することができる。これにより、レーザ素子接着面とな
る薄いＡｕ層の熱が、ワイヤボンディング用の厚いＡｕ
層に吸収されるのを防止し、レーザ素子接着面の熱の電
動を良好ならしめる。At this time, the Au layer on the surface of the submount which is bonded to the laser element can be formed continuously or separately from the Au layer on the surface of the submount where wire bonding is performed. As a result, the heat of the thin Au layer serving as the laser element bonding surface is changed to the thick Au layer for wire bonding.
It is prevented from being absorbed by the layer, and the heat of the laser element bonding surface is electrically driven well.

【００１２】また、サブマウント表面のレーザ素子との
接着面のＡｕ層の厚さを、レーザ素子裏面のＡｕ層の厚
さ以下とする。これによりレーザ素子表面のＡｕ層への
熱の伝達を促進できる。Further, the thickness of the Au layer on the surface of the submount which is bonded to the laser element is set to be equal to or less than the thickness of the Au layer on the back surface of the laser element. This can promote the transfer of heat to the Au layer on the surface of the laser element.

【００１３】さらに、サブマウント表面のレーザ素子と
の接着面のＡｕ層の厚さは１０００Å＋３０％，−５０
％とする。なお、レーザ素子裏面のＡｕ層の厚さは、１
０００Å＋３０％，−５０％とする。これらにより、ダ
イボンドの強度を大きくすることができる。Further, the thickness of the Au layer on the surface of the submount which is bonded to the laser element is 1000Å + 30%, −50.
%. The thickness of the Au layer on the back surface of the laser element is 1
000Å + 30% and -50%. With these, the strength of the die bond can be increased.

【００１４】[0014]

【発明の実施の形態】図１（ａ）は本発明の第１の実施
の形態の略断面図である。サブマウント基板３−１は、
ＳｉＣにより構成されており、その表面にＴｉ層４−
１，Ｐｔ層４−２を積層する。その上に、Ａｕ層４−３
を形成するのであるが、このとき、中央部のレーザ素子
１を接着するダイボンディング部分のＡｕ層４−３ｂを
約１０００Åの厚さとし、その周辺の部分のワイヤボン
ディング用のＡｕ層４−３ａを約２０００Åの厚さに形
成する。これは、最初に約１０００ÅのＡｕ層をサブマ
ウント基板３−１の表面のメタライズ層の最上層に形成
し、その上に中央部にマスクを施して、マスクの周辺部
にさらに約１０００ÅのＡｕ層を形成することにより製
造することができる。薄くされたＡｕ層４−３ｂの表面
に、ＡｕＳｎよりなるダイボンドろう材を塗布し、その
上にレーザ素子１の下面のＡｕ層２−２を圧着し加熱す
ることにより、レーザ素子１はサブマウント３に接着さ
れる。接着の工程は図４に示したものと同様である。DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 (a) is a schematic sectional view of a first embodiment of the present invention. The submount substrate 3-1 is
It is made of SiC and has a Ti layer 4-
1, Pt layer 4-2 is laminated. On top of that, the Au layer 4-3
At this time, the thickness of the Au layer 4-3b of the die bonding portion for bonding the laser element 1 in the central portion is set to about 1000Å, and the Au layer 4-3a for wire bonding in the peripheral portion is formed. Form to a thickness of approximately 2000Å. This is because an Au layer of about 1000 Å is first formed on the uppermost metallized layer on the surface of the submount substrate 3-1 and a mask is applied on the center of the metallized layer, and about 1000 Å of Au is further added to the peripheral portion of the mask. It can be manufactured by forming layers. The laser element 1 is sub-mounted by applying die-bonding brazing material made of AuSn on the surface of the thinned Au layer 4-3b and pressing the Au layer 2-2 on the lower surface of the laser element 1 under pressure to heat the die-bonding brazing material. Bonded to 3. The bonding process is the same as that shown in FIG.

【００１５】この構造は、従来のサブマウントのよう
に、ワイヤボンド用Ａｕ層とレーザ素子ダイボンド用の
Ａｕ層が、１つの層で連続しているものであるが、レー
ザ素子のダイボンダビリティを優先に考慮した場合に、
ワイヤボンド用Ａｕ層よりもレーザ素子ダイボンド領域
の下地となるＡｕ層を薄くすることで、レーザ素子とサ
ブマウントとのダイボンドにおいて、良好なダイボンダ
ビリティが得られる。双方のＡｕ層の厚さは、それぞれ
に最もよい条件に設定される。ダイボンドの強度につい
ては、後述の実験例に記載されている。In this structure, like the conventional submount, the Au layer for wire bonding and the Au layer for laser element die bonding are continuous in one layer, but the die bondability of the laser element is given priority. When considering
By making the Au layer that is the base of the laser element die bond region thinner than the Au layer for wire bonding, good die bondability can be obtained in die bonding between the laser element and the submount. The thickness of both Au layers is set to the best condition for each. The strength of the die bond is described in Experimental Examples described later.

【００１６】図１（ｂ）は、本発明の第２の実施の形態
の略断面図である。すなわち、前述のＡｕ層が連続した
サブマウントに対して、この実施の形態では、レーザ素
子をダイボンドする面とワイヤボンドを行なう面のＡｕ
層をそれぞれに分離する。それぞれの厚さは、レーザ素
子のダイボンダビリティとワイヤボンダビリティの双方
が最もよい条件で行なえるように選定される。FIG. 1 (b) is a schematic sectional view of the second embodiment of the present invention. That is, in the present embodiment, the Au mount on the surface on which the laser element is die-bonded and the Au-bond surface on which the wire bond is performed, in contrast to the above-described submount in which the Au layer is continuous.
Separate layers. Each thickness is selected so that both die bondability and wire bondability of the laser element can be achieved under the best conditions.

【００１７】図に示されるように、ダイボンディング部
のＡｕ層４−３ｂを、その周辺のワイヤボンディング用
のＡｕ層４−３ａと分離されている。その他同一の部分
は同一の符号で表わしている。このようなサブマウント
のＡｕ層４−３は以下のようにして形成される。図２
（ａ）〜（ｄ）は、その工程の略断面図である。As shown in the figure, the Au layer 4-3b of the die bonding portion is separated from the surrounding Au layer 4-3a for wire bonding. The other same parts are denoted by the same reference numerals. The Au layer 4-3 of such a submount is formed as follows. Figure 2
(A)-(d) is a schematic sectional drawing of the process.

【００１８】図２（ａ）に示されるように、蒸着用ボー
ト２４にＡｕ２５を載置し、これに対向するようにリン
グ状に穴をあけた第１のメタルマスク２３を配置し、そ
の上方にサブマウント基板３−１の下面のＰｔ層４−２
を対向させる。リングの外周はサブマウント基板３−１
の外周に対応し、リング内方のマスク部分２３−１はレ
ーザ素子のダイボンド予定領域に対応する。As shown in FIG. 2A, the Au 25 is placed on the vapor deposition boat 24, and the first metal mask 23 having a ring-shaped hole is arranged so as to face the Au 25, and the Au 25 is placed above the Au 25. The Pt layer 4-2 on the lower surface of the submount substrate 3-1
Face each other. The outer circumference of the ring is the submount substrate 3-1.
The mask portion 23-1 on the inner side of the ring corresponds to the die bonding region of the laser element.

【００１９】蒸着用ボート２４を加熱し、Ａｕ２５をサ
ブマウント基板３−１下面のＰｔ層４−２に、約２００
０Åの厚さに蒸着し、Ａｕ層４−３ａを形成させると、
図２（ｂ）に示すようなサブマウントが得られる。The vapor deposition boat 24 is heated, and Au 25 is deposited on the Pt layer 4-2 on the lower surface of the submount substrate 3-1 for about 200 times.
When the Au layer 4-3a is formed by vapor deposition to a thickness of 0Å,
A submount as shown in FIG. 2B is obtained.

【００２０】次に、図２（ｃ）に示すように、第２のメ
タルマスク２７と交換する。このマスクはダイボンディ
ングの予定領域に対応する穴が設けられている。その他
は図２（ａ）と同様である。Next, as shown in FIG. 2C, the second metal mask 27 is replaced. This mask is provided with holes corresponding to the planned area for die bonding. Others are the same as those in FIG.

【００２１】蒸着用ボート２４を加熱し、Ａｕ２５をサ
ブマウント基板３−１下面のＰｔ層４−２に約１０００
Åの厚さに蒸着し、Ａｕ層４−３ｂを形成すると、図２
（ｄ）に示すようなサブマウントが得られる。The vapor deposition boat 24 is heated, and Au 25 is deposited on the Pt layer 4-2 on the lower surface of the submount substrate 3-1 to about 1000.
When vapor deposition is performed to a thickness of Å and an Au layer 4-3b is formed,
A submount as shown in (d) is obtained.

【００２２】このサブマウントにダイボンドろう材５を
介して、レーザ素子をボンディングすることにより、図
１（ｂ）のような半導体レーザ素子が得られる。A semiconductor laser device as shown in FIG. 1B is obtained by bonding a laser device to this submount via the die bond brazing material 5.

【００２３】図１（ｃ）は、本発明の第３の実施の形態
の略断面図である。第１および第２の実施の形態と異な
るところは、ダイボンディング用の薄いＡｕ層４−４
を、サブマウント３表面のメタライズ層４の最上層のＡ
ｕ層４−３の表面に、たとえばＭｏよりなる拡散防止層
４−５を介して、形成したことである。その他は図１
（ａ），（ｂ）と同様である。同一の部分は同一の符号
で表わしてある。FIG. 1C is a schematic sectional view of the third embodiment of the present invention. The difference from the first and second embodiments is that a thin Au layer 4-4 for die bonding is used.
Is the uppermost layer of the metallized layer 4 on the surface of the submount 3
That is, it is formed on the surface of the u layer 4-3 via a diffusion preventing layer 4-5 made of Mo, for example. Others are Figure 1
It is similar to (a) and (b). The same parts are represented by the same symbols.

【００２４】次に、レーザ素子をサブマウントにダイボ
ンドする際の双方の接着面のＡｕ層の厚さとダイボンド
の強度との関係について述べる。Next, the relationship between the thickness of the Au layers on both bonding surfaces and the strength of the die bond when the laser element is die-bonded to the submount will be described.

【００２５】図３（ａ）は、レーザ素子裏面のＡｕ層の
厚さを１０００Åとし、ＳｉＣサブマウント表面のダイ
ボンドするＡｕ層の厚さを変化させた場合のダイボンド
強度の変化を示す図である。FIG. 3A is a diagram showing a change in die bond strength when the thickness of the Au layer on the back surface of the laser device is 1000 Å and the thickness of the Au layer to be die-bonded on the surface of the SiC submount is changed. .

【００２６】ＳｉＣサブマウント表面のＡｕ層の厚さが
１０００Åのとき、ダイボンド強度は最大となる。Ｓｉ
Ｃサブマウント表面のＡｕ層の厚さが５００Åになった
ときの強度は、Ａｕ層の厚さが１０００Åになったとき
より大きい。５００Åのときの強度が１３００Åのとき
とほぼ等しい。The die bond strength becomes maximum when the thickness of the Au layer on the surface of the SiC submount is 1000Å. Si
The strength when the thickness of the Au layer on the surface of the C submount is 500 Å is larger than that when the thickness of the Au layer is 1000 Å. The strength at 500Å is almost equal to that at 1300Å.

【００２７】図３（ｂ）は、ダイボンドするＳｉＣサブ
マウント表面のＡｕ層の厚さを１０００Åとし、レーザ
素子裏面のＡｕ層の厚さを変化させた場合のダイボンド
強度の変化を示す図である。レーザ素子裏面のＡｕ層の
厚さが１０００Åのとき、ダイボンド強度は最大とな
る。レーザ素子裏面のＡｕ層の厚さが５００Åになった
ときの強度は、Ａｕ層の厚さは１５００Åになったとき
よりも大きい。５００Åのときの強度は１３００Åのと
きの強度とほぼ等しい。FIG. 3B is a diagram showing a change in die bond strength when the thickness of the Au layer on the surface of the SiC submount to be die-bonded is 1000 Å and the thickness of the Au layer on the back surface of the laser device is changed. . The die bond strength becomes maximum when the thickness of the Au layer on the back surface of the laser element is 1000Å. The strength when the thickness of the Au layer on the back surface of the laser element is 500 Å is larger than that when the thickness of the Au layer is 1500 Å. The strength at 500Å is almost equal to the strength at 1300Å.

【００２８】これらの図から、レーザチップ裏面のＡｕ
層の厚さを１０００Åとし、ＳｉＣサブマウント表面の
Ａｕ層の厚さを１０００Åとしたときダイボンド強度は
最大となることがわかる。From these figures, the Au on the back surface of the laser chip is shown.
It can be seen that the die bond strength is maximized when the layer thickness is 1000 Å and the Au layer thickness on the SiC submount surface is 1000 Å.

【００２９】実験の一例によれば、前述のようになる
が、製造の都合上、双方のＡｕ層の厚さが異なる場合も
ある。この場合、サブマウント表面のＡｕ層の厚さを、
レーザ素子裏面のＡｕ層の厚さより小さくする方が望ま
しい。レーザ素子ダイボンドを行なう際に、サブマウン
ト表面のＡｕ層が薄い方が熱が速く伝達され、レーザ素
子およびサブマウント側のＡｕ層とダイボンドろう材が
反応するスピードが、双方とも同じスピードで反応が迅
速に進み、ダイボンダビリティが良好となる。According to an example of the experiment, as described above, the thickness of both Au layers may be different for the convenience of manufacturing. In this case, the thickness of the Au layer on the surface of the submount is
It is desirable to make the thickness smaller than the thickness of the Au layer on the back surface of the laser element. When laser element die bonding is performed, heat is transferred faster when the Au layer on the submount surface is thinner, and the Au layer on the laser element and the submount side reacts with the die bond brazing material at the same speed. Proceeds quickly and improves die bondability.

【００３０】[0030]

【発明の効果】以上のように、本発明によれば、半導体
レーザ素子をサブマウントに接着するとき、半導体レー
ザ素子裏面のＡｕ層の厚さとサブマウント表面の半導体
レーザ素子接着領域のＡｕ層の厚さを、最適な厚さに選
定して、良好なダイボンドの強度を得ることができる。As described above, according to the present invention, when the semiconductor laser device is bonded to the submount, the thickness of the Au layer on the back surface of the semiconductor laser device and the Au layer in the semiconductor laser device bonding region on the surface of the submount are adjusted. The thickness can be selected to be the optimum thickness, and good die bond strength can be obtained.

【図面の簡単な説明】[Brief description of drawings]

【図１】（ａ），（ｂ）および（ｃ）は、それぞれ本発
明の実施の形態の略断面図である。1 (a), (b) and (c) are schematic cross-sectional views of an embodiment of the present invention.

【図２】（ａ），（ｂ），（ｃ）および（ｄ）は、図１
（ｂ）の製造工程の略断面図である。2 (a), (b), (c) and (d) are shown in FIG.
It is a schematic sectional drawing of the manufacturing process of (b).

【図３】（ａ）はレーザ素子裏面のＡｕ層の厚さを一定
とした場合、サブマウント表面のＡｕ層の厚さとダイボ
ンド強度との関係を示す図である。（ｂ）はサブマウン
ト表面のＡｕ層の厚さを一定とした場合レーザチップ裏
面のＡｕ層の裏面の厚さとダイボンド強度との関係を示
す図である。FIG. 3A is a diagram showing the relationship between the thickness of the Au layer on the surface of the submount and the die bond strength when the thickness of the Au layer on the back surface of the laser device is constant. FIG. 7B is a diagram showing a relationship between the thickness of the back surface of the Au layer on the back surface of the laser chip and the die bond strength when the thickness of the Au layer on the surface of the submount is constant.

【図４】（ａ），（ｂ）および（ｃ）は従来のダイボン
ディングの各工程の略断面図である。4A, 4B and 4C are schematic cross-sectional views of respective steps of conventional die bonding.

【図５】従来の半導体レーザ素子の略断面図である。FIG. 5 is a schematic sectional view of a conventional semiconductor laser device.

【符号の説明】[Explanation of symbols]

１ 半導体レーザ素子 ２ メタライズ層 ２−１ Ｍｏ層 ２−２ Ａｕ層 ３ サブマウント ４ メタライズ層 ４−１ Ｔｉ層 ４−２ Ｐｔ層 ４−３ Ａｕ層 ４−４ Ａｕ層 ４−５ Ｍｏ層 ５ ダイボンドろう材 ６ Ａｕワイヤ ７ ステムリード ８ Ａｕワイヤ ９ ステムブロック部 １０ 吸着コレット １２ ヒータブロック 1 Semiconductor laser device 2 Metallized layer 2-1 Mo layer 2-2 Au layer 3 submount 4 Metallized layer 4-1 Ti layer 4-2 Pt layer 4-3 Au layer 4-4 Au layer 4-5 Mo layer 5 Die bond brazing material 6 Au wire 7 Stem lead 8 Au wire 9 Stem block part 10 Adsorption collet 12 heater block

───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 平９−172224（ＪＰ，Ａ) 特開 平５−190973（ＪＰ，Ａ) 特開 昭63−132495（ＪＰ，Ａ) 特開 昭60−74539（ＪＰ，Ａ) 特開 平３−20091（ＪＰ，Ａ) 特開 平９−148623（ＪＰ，Ａ) (58)調査した分野(Int.Cl.7，ＤＢ名) H01S 5/00 - 5/50 ─────────────────────────────────────────────────── ─── Continuation of the front page (56) Reference JP-A-9-172224 (JP, A) JP-A-5-190973 (JP, A) JP-A-63-132495 (JP, A) JP-A-60- 74539 (JP, A) JP-A-3-20091 (JP, A) JP-A-9-148623 (JP, A) (58) Fields investigated (Int.Cl. 7 , DB name) H01S 5/00-5 / 50

Claims (6)

(57)【特許請求の範囲】(57) [Claims] 【請求項１】 半導体レーザ素子裏面のサブマウントと
の接着面に最下層にＡｕ層を有する複数の金属よりなる
メタライズ層を形成し、サブマウントの表面の半導体レ
ーザ素子との接着面およびサブマウントのワイヤボンデ
ィングを行なう面に、最上層にＡｕ層を有する複数の金
属層よりなるメタライズ層を形成し、半導体レーザ素子
裏面の最下層のＡｕ層とサブマウントの表面の最上層の
Ａｕ層とを接着する半導体レーザ装置の製造方法におい
て、 サブマウント表面の半導体レーザ素子の接着面の最上層
のＡｕ層は、これと連続するサブマウント表面のワイヤ
ボンディングを行なう面のＡｕ層より薄く形成すること
を特徴とする半導体レーザ装置の製造方法。1. A metallization layer made of a plurality of metals having an Au layer as a lowermost layer is formed on a bonding surface of a back surface of a semiconductor laser device to a submount, and a bonding surface to the semiconductor laser device on the surface of the submount and the submount. A metallized layer made of a plurality of metal layers having an Au layer as the uppermost layer is formed on the surface for wire bonding, and the lowermost Au layer on the back surface of the semiconductor laser device and the uppermost Au layer on the surface of the submount are formed. In the method of manufacturing a semiconductor laser device for bonding, the uppermost Au layer of the bonding surface of the semiconductor laser element on the surface of the submount is formed thinner than the Au layer on the surface of the submount surface where wire bonding is performed. A method of manufacturing a characteristic semiconductor laser device. 【請求項２】 半導体レーザ素子裏面のサブマウントと
の接着面に最下層にＡｕ層を有する複数の金属よりなる
メタライズ層を形成し、サブマウントの表面の半導体レ
ーザ素子との接着面およびサブマウントのワイヤボンデ
ィングを行なう面に最上層にＡｕ層を有する複数の金属
層よりなるメタライズ層を形成し、半導体レーザ素子裏
面の最下層のＡｕ層のサブマウントの表面の最上層のＡ
ｕ層とを接着する半導体レーザ装置の製造方法におい
て、 サブマウント表面の半導体レーザ素子との接着面の最上
層のＡｕ層は、これと分離して形成されたサブマウント
表面の最上層のワイヤボンディングを行なう面のＡｕ層
より薄く形成することを特徴とする半導体レーザ装置の
製造方法。2. A metallization layer made of a plurality of metals having an Au layer as a lowermost layer is formed on a bonding surface of a back surface of the semiconductor laser device with the submount, and a bonding surface with the semiconductor laser device on the surface of the submount and the submount. A metallization layer made of a plurality of metal layers having an Au layer as the uppermost layer is formed on the surface on which the wire bonding is performed, and the Au layer, which is the lowermost Au layer on the back surface of the semiconductor laser device, is the uppermost layer, A
In a method of manufacturing a semiconductor laser device in which a u layer is bonded, an uppermost Au layer on a bonding surface of a submount surface to a semiconductor laser element is separated from the uppermost Au layer by wire bonding. A method of manufacturing a semiconductor laser device, characterized in that the semiconductor laser device is formed thinner than the Au layer on the surface for carrying out. 【請求項３】 半導体レーザ素子裏面のサブマウントと
の接着面に最下層にＡｕ層を有する複数の金属よりなる
メタライズ層を形成し、サブマウントの表面の半導体レ
ーザ素子の接着面およびサブマウントのワイヤボンディ
ングを行なう面に連続した最上層にＡｕ層を有する複数
の金属層よりなるメタライズ層を形成し、サブマウント
表面の半導体レーザ素子との接着部には拡散防止層を介
して、半導体レーザ素子最下層のＡｕ層を接着するため
のＡｕ層を形成しこれに半導体レーザ素子の最下層のＡ
ｕ層を接着する半導体レーザ装置の製造方法において、 拡散防止層表面のＡｕ層はその下方のサブマウント表面
のＡｕ層より薄く形成することを特徴とする半導体レー
ザ装置の製造方法。3. A metallization layer made of a plurality of metals having an Au layer as a lowermost layer is formed on a bonding surface of a back surface of the semiconductor laser device with the submount, and the bonding surface of the semiconductor laser device on the surface of the submount and the submount. A metallization layer made of a plurality of metal layers having an Au layer is formed on the uppermost layer continuous to the surface to be wire-bonded, and the semiconductor laser device is provided with a diffusion prevention layer at the bonding portion with the semiconductor laser device on the surface of the submount. An Au layer for adhering the bottom Au layer is formed, and the bottom layer A of the semiconductor laser device is formed with the Au layer.
A method of manufacturing a semiconductor laser device in which a u layer is adhered, wherein the Au layer on the surface of the diffusion prevention layer is formed thinner than the Au layer on the surface of the submount below the diffusion prevention layer. 【請求項４】 サブマウント表面の半導体レーザ素子を
接着する部分のＡｕ層の厚さは、半導体レーザ素子の裏
面のＡｕ層の厚さ以下であることを特徴とする請求項
１，２または３記載の半導体レーザ装置の製造方法。4. The thickness of the Au layer on the surface of the submount where the semiconductor laser element is bonded is less than or equal to the thickness of the Au layer on the back surface of the semiconductor laser element. A method for manufacturing the semiconductor laser device described. 【請求項５】 半導体レーザ素子裏面のＡｕ層の厚さは
１０００Å＋３０％，−５０％であることを特徴とする
請求項１，２，３または４記載の半導体レーザ装置の製
造方法。5. The method for manufacturing a semiconductor laser device according to claim 1, wherein the Au layer on the back surface of the semiconductor laser device has a thickness of 1000Å + 30% and −50%. 【請求項６】 半導体レーザ素子を接着するサブマウン
ト表面のＡｕ層の厚さは１０００Å＋３０％，−５０％
であることを特徴とする請求項１，２，３または４記載
の半導体レーザ装置の製造方法。6. The thickness of the Au layer on the surface of the submount for adhering the semiconductor laser device is 1000Å + 30%, −50%.
The method for manufacturing a semiconductor laser device according to claim 1, 2, 3, or 4, wherein
JP08418898A 1998-03-30 1998-03-30 Method of manufacturing semiconductor laser device Expired - Lifetime JP3410655B2 (en)

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Application Number Priority Date Filing Date Title
JP08418898A JP3410655B2 (en) 1998-03-30 1998-03-30 Method of manufacturing semiconductor laser device

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JP3410655B2 true JP3410655B2 (en) 2003-05-26

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JP2001127370A (en) * 1999-10-22 2001-05-11 Kyocera Corp Submount for mounting semiconductor element
WO2006082770A1 (en) * 2005-02-07 2006-08-10 Kabushiki Kaisha Toshiba Ceramic wiring board and process for producing the same, and semiconductor device using the same
JP4891556B2 (en) * 2005-03-24 2012-03-07 株式会社東芝 Manufacturing method of semiconductor device
JP2007201420A (en) 2005-12-27 2007-08-09 Sharp Corp Semiconductor light-emitting device, semiconductor light-emitting element, and method of manufacturing semiconductor light-emitting device
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