JP3401141B2 - Substrate development processing method and apparatus - Google Patents
Substrate development processing method and apparatusInfo
- Publication number
- JP3401141B2 JP3401141B2 JP18881996A JP18881996A JP3401141B2 JP 3401141 B2 JP3401141 B2 JP 3401141B2 JP 18881996 A JP18881996 A JP 18881996A JP 18881996 A JP18881996 A JP 18881996A JP 3401141 B2 JP3401141 B2 JP 3401141B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- supply nozzle
- rinse liquid
- developing solution
- liquid supply
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/32—Liquid compositions therefor, e.g. developers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/3021—Imagewise removal using liquid means from a wafer supported on a rotating chuck
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/3021—Imagewise removal using liquid means from a wafer supported on a rotating chuck
- G03F7/3028—Imagewise removal using liquid means from a wafer supported on a rotating chuck characterised by means for on-wafer monitoring of the processing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Description
【０００１】[0001]
【発明の属する技術分野】この発明は、半導体ウエハ、
液晶表示装置（ＬＣＤ）用ガラス基板等の基板を水平姿
勢に保持し、静止した状態の基板の表面へ現像液を供給
して、基板の表面に形成された露光済みのフォトレジス
ト膜を現像する基板の現像処理方法、ならびに、その方
法の実施に使用される基板の現像処理装置に関する。TECHNICAL FIELD The present invention relates to a semiconductor wafer,
A substrate such as a glass substrate for a liquid crystal display (LCD) is held in a horizontal posture, a developing solution is supplied to the surface of the substrate in a stationary state, and the exposed photoresist film formed on the surface of the substrate is developed. The present invention relates to a substrate development processing method and a substrate development processing apparatus used for carrying out the method.
【０００２】[0002]
【従来の技術】半導体製造プロセスやＬＣＤ製造プロセ
スなどにおいて、基板の表面に形成された露光済みのフ
ォトレジスト膜を現像する場合、基板を水平姿勢に保持
して鉛直軸回りに回転させながら、スプレイ式吐出ノズ
ルから現像液を吐出することにより、回転する基板の表
面全体に均一かつ十分な量の現像液を供給して、フォト
レジスト膜を現像（いわゆるスプレイ現象）する方法
と、基板を水平姿勢に保持して鉛直軸回りに低速で回転
させながら、吐出ノズルから現像液を基板上へ緩やかに
供給し、基板の表面全体に現像液を拡がらせて現像液層
を形成し、基板を静止させもしくは低速で回転させなが
らフォトレジスト膜を現像（いわゆるパドル現象）する
方法とが一般に行われている。これらの現像方法のう
ち、後者の方法では、基板の表面に現像液が供給されて
から、その現像液が基板の表面全体に拡がるまでに時間
がかかる。このため、基板の位置によってフォトレジス
ト膜が現像され始める時期に差を生じ、これらが現像む
らの原因になるといった問題点がある。2. Description of the Related Art In a semiconductor manufacturing process, an LCD manufacturing process, or the like, when developing an exposed photoresist film formed on a surface of a substrate, the substrate is held in a horizontal position and rotated about a vertical axis while spraying. Method of discharging a developing solution from a discharge nozzle to supply a uniform and sufficient amount of developing solution to the entire surface of a rotating substrate to develop a photoresist film (so-called spray phenomenon), and a horizontal posture of the substrate. While holding the substrate at a low speed and rotating it around the vertical axis at a low speed, the developer is gently supplied from the discharge nozzle onto the substrate, and the developer is spread over the entire surface of the substrate to form a developer layer, and the substrate is stopped. The method of developing the photoresist film (so-called paddle phenomenon) while rotating or rotating at low speed is generally performed. In the latter of these developing methods, it takes time from the supply of the developing solution to the surface of the substrate until the developing solution spreads over the entire surface of the substrate. For this reason, there is a problem in that the timing at which the photoresist film starts to be developed varies depending on the position of the substrate, which causes uneven development.
【０００３】そこで、例えば特開昭６３−１８６２７号
公報には、図６の（Ａ）に概略図を示すように、基板Ｗ
を静止させ（或いは回転させながら）、基板Ｗの最大幅
と同等以上の長さを有する棒状の液出しノズル１（図６
の（Ｂ）に示す平面図を参照）を基板Ｗ面上に平行に設
置し、液出しノズル１から現像液２を基板上に滴下させ
ながら、液出しノズル１を、基板Ｗ上を平行にスライド
させることにより、基板Ｗ上の全面に現像液２を盛るよ
うにする現像方法が開示されている。Therefore, for example, in Japanese Unexamined Patent Publication No. 63-18627, a substrate W is used as shown in the schematic view of FIG.
(Or while rotating), the rod-shaped liquid discharge nozzle 1 having a length equal to or larger than the maximum width of the substrate W (see FIG. 6).
(See the plan view of (B) of FIG. 2) is placed in parallel on the surface of the substrate W, and the liquid discharge nozzle 1 is made parallel to the surface of the substrate W while the developer 2 is dropped from the liquid discharge nozzle 1 onto the substrate. A developing method is disclosed in which the developer 2 is spread on the entire surface of the substrate W by sliding.
【０００４】[0004]
【発明が解決しようとする課題】ところで、特開昭６３
−１８６２７号公報に開示されているように、基板の表
面全体に現像液を盛ってフォトレジスト膜を現像する現
像方法において、現像液によるフォトレジスト膜の現像
を停止させるには、基板の表面に現像液が供給されてか
ら所定の現像時間（例えば１分）が経過した後に、基板
を高速で回転させて、基板上の現像液を遠心力で振り切
るとともに、リンス液、例えば純水を吐出ノズルから回
転させた基板の表面へ吐出し、基板全面を純水で置換さ
せて現像を停止させる方法が、従来から一般的に用いら
れている。したがって、フォトレジスト膜の現像停止
は、基板の表面全体においてほぼ同時になされるように
なっていた。By the way, Japanese Patent Laid-Open No. Sho 63-63
As disclosed in JP-A-18627, in a developing method in which a developing solution is spread over the entire surface of the substrate to develop the photoresist film, in order to stop the development of the photoresist film by the developing solution, After a predetermined development time (for example, 1 minute) has elapsed since the developing solution was supplied, the substrate is rotated at a high speed to shake off the developing solution on the substrate by centrifugal force, and at the same time, a rinsing solution, for example, pure water is discharged from the nozzle. A method of discharging from the substrate to the surface of the substrate rotated and replacing the entire surface of the substrate with pure water to stop the development has been generally used. Therefore, the development of the photoresist film is stopped almost at the same time on the entire surface of the substrate.
【０００５】ところが、特開昭６３−１８６２７号公報
に開示された現像方法のように、基板の最大幅と同等以
上の長さを有する液出しノズルを基板の表面と平行に移
動させながら、液出しノズルから基板の表面へ現像液を
供給して、基板の表面全体に液盛りした場合には、図６
の（Ｂ）に概略平面図を示すように、基板Ｗの表面全体
に被着形成されたフォトレジスト膜において先に現像液
と接触する部分と後から現像液と接触する部分とが生じ
る。図６の（Ｂ）においては、現像液が供給された部分
を斜線で示している。基板上の位置によってフォトレジ
スト膜に現像液が接触して現像が開始される時期が違う
と、従来のように、基板の表面に現像液が供給されてか
ら所定時間経過後に、基板を高速回転させて基板上から
現像液を除去するとともに、リンス液を回転させた基板
の表面へ吐出して基板全面を純水で置換させ、フォトレ
ジスト膜の現像を基板の表面全体において同時に停止さ
せる方法では、基板上の位置によってフォトレジスト膜
の現像時間に差を生じることになる。この結果、現像む
らが発生したり、現像後におけるレジストパターンの線
幅の面内寸法均一性が得られなかったりする、といった
問題を生じる。特に、基板が大型化すると、液出しノズ
ルが基板の一端から他端まで移動するのに時間がかかる
ため、基板上の位置による現像時間の差が大きくなり、
現像むらやレジストパターンの線幅寸法の不均一性の問
題がより深刻となる。However, as in the developing method disclosed in Japanese Patent Laid-Open No. 63-18627, while moving a liquid discharge nozzle having a length equal to or longer than the maximum width of the substrate in parallel with the surface of the substrate, When the developing solution is supplied from the dispensing nozzle to the surface of the substrate and the surface of the substrate is filled with the developing solution, as shown in FIG.
As shown in the schematic plan view of (B), there are portions of the photoresist film deposited on the entire surface of the substrate W, which come into contact with the developing solution first and portions which come into contact with the developing solution later. In FIG. 6B, the portion to which the developing solution has been supplied is indicated by diagonal lines. If the developing solution comes into contact with the photoresist film at different times depending on the position on the substrate to start development, the substrate will rotate at a high speed after a predetermined time has elapsed after the developing solution was supplied to the surface of the substrate, as in the conventional case. In this method, the developing solution is removed from the substrate and the rinse solution is discharged onto the surface of the rotated substrate to replace the entire surface of the substrate with pure water, and the development of the photoresist film is stopped simultaneously on the entire surface of the substrate. The development time of the photoresist film varies depending on the position on the substrate. As a result, there arise problems that uneven development occurs or that in-plane dimensional uniformity of the line width of the resist pattern cannot be obtained after development. In particular, when the substrate becomes large, it takes time for the liquid discharge nozzle to move from one end to the other end of the substrate, so that the difference in development time depending on the position on the substrate becomes large,
The problems of uneven development and non-uniformity of the line width dimension of the resist pattern become more serious.
【０００６】この発明は、以上のような事情に鑑みてな
されたものであり、基板の直径もしくは幅と同等以上の
吐出幅を有する現像液供給ノズルを、水平姿勢に保持さ
れ静止した状態の基板の表面と平行に基板の一端から他
端まで直線的に移動させ、現像液供給ノズルから基板の
表面全体に現像液を供給して液盛りする基板の現像液処
理方法において、基板の表面に形成されたフォトレジス
ト膜の現像時間が基板上の各位置においてほぼ等しくな
り、現像むらが発生する心配が無く、現像後におけるレ
ジストパターンの線幅の面内寸法均一性が得られるよう
な方法を提供すること、ならびに、そのような方法を好
適に実施することができる基板の現像処理装置を提供す
ることを目的とする。The present invention has been made in view of the above circumstances, and a substrate in a state in which a developer supply nozzle having a discharge width equal to or larger than the diameter or width of the substrate is held in a horizontal posture and is stationary Formed on the surface of a substrate in a method of treating a substrate by linearly moving the substrate from one end to the other end in parallel with the surface of the substrate and supplying a developing solution from the developing solution supply nozzle to the entire surface of the substrate to fill the surface. Provided is a method in which the developing time of the developed photoresist film is almost equal at each position on the substrate, there is no fear of uneven development, and the in-plane uniformity of the line width of the resist pattern after development is obtained. It is an object of the present invention to provide a substrate development processing apparatus capable of suitably carrying out such a method.
【０００７】[0007]
【課題を解決するための手段】請求項１に係る発明は、
基板の直径もしくは幅と同等以上の吐出幅を有する現像
液供給ノズルを、水平姿勢に保持され静止した状態の基
板の表面と平行に基板の一端の現像液供給開始位置から
他端の現像液供給終了位置まで直線的に移動させ、現像
液供給ノズルから基板の表面全体に現像液を供給してか
ら、所定時間経過した後に、基板の直径もしくは幅と同
等以上の吐出幅を有するリンス液供給ノズルを、水平姿
勢に保持され静止した状態の前記基板の表面と平行に基
板の一端の前記現像液供給開始位置から他端の前記現像
液供給終了位置まで直線的に移動させ、リンス液供給ノ
ズルから基板の表面全体にリンス液を供給して、基板の
表面に形成されたフォトレジスト膜の現像を停止させる
ことを特徴とする。The invention according to claim 1 is
A developer supply nozzle having a discharge width equal to or larger than the diameter or width of the substrate is supplied in parallel with the surface of the substrate held in a horizontal position from the developer supply start position at one end of the substrate to the developer supply at the other end. A rinse liquid supply nozzle having a discharge width equal to or larger than the diameter or width of the substrate after a predetermined time has elapsed after the developer was supplied linearly to the end position and the developer was supplied from the developer supply nozzle to the entire surface of the substrate. Is moved linearly from the developing solution supply start position at one end of the substrate to the developing solution supply end position at the other end in parallel with the surface of the substrate that is held in a horizontal posture and is stationary. The rinse liquid is supplied to the entire surface of the substrate to stop the development of the photoresist film formed on the surface of the substrate.
【０００８】請求項２に係る発明は、請求項１記載の現
像処理方法において、現像液供給ノズルから基板の表面
全体に現像液が供給された後、基板を鉛直軸回りに所定
の角度分だけ回動させ、その回動後に基板の一端の現像
液供給開始位置に対向する位置に配置されたリンス液供
給ノズルにより基板の表面へリンス液を供給することを
特徴とする。According to a second aspect of the present invention, in the developing method according to the first aspect, after the developing solution is supplied from the developing solution supply nozzle to the entire surface of the substrate, the substrate is rotated by a predetermined angle around the vertical axis. It is characterized in that the rinse liquid is supplied to the surface of the substrate by rotating, and after the rotation, the rinse liquid supply nozzle arranged at a position facing the developing liquid supply start position at one end of the substrate.
【０００９】請求項３に係る発明は、請求項１または請
求項２記載の現像処理方法において、リンス液供給ノズ
ルを、その下端側がリンス液供給ノズルの移動方向に突
き出るように傾斜させ、リンス液供給ノズルの下端から
吐出されるリンス液の、基板に対する相対吐出速度が、
基板に対するリンス液供給ノズルの相対移動速度より大
きくなるようにしたことを特徴とする。According to a third aspect of the present invention, in the developing method according to the first or second aspect, the rinse liquid supply nozzle is inclined so that its lower end side projects in the moving direction of the rinse liquid supply nozzle. The relative discharge speed of the rinse liquid discharged from the lower end of the supply nozzle with respect to the substrate is
It is characterized in that it is set to be higher than the relative movement speed of the rinse liquid supply nozzle to the substrate.
【００１０】請求項４に係る発明は、請求項１または請
求項２記載の現像処理方法において、リンス供給ノズル
を、その下端側がリンス液供給ノズルの移動方向と逆方
向に突き出るように傾斜させ、リンス液供給ノズルの下
端から吐出されるリンス液の、基板に対する相対吐出速
度が、基板に対するリンス液供給ノズルの相対移動速度
より小さくなるようにしたことを特徴とする。According to a fourth aspect of the present invention, in the development processing method according to the first or second aspect, the rinse supply nozzle is inclined such that the lower end side thereof projects in the direction opposite to the moving direction of the rinse liquid supply nozzle. The relative discharge speed of the rinse liquid discharged from the lower end of the rinse liquid supply nozzle with respect to the substrate is smaller than the relative movement speed of the rinse liquid supply nozzle with respect to the substrate.
【００１１】請求項５に係る発明は、表面にフォトレジ
スト膜が形成された基板を水平姿勢に保持する基板保持
手段と、基板の直径もしくは幅と同等以上の吐出幅を有
し、前記基板保持手段に保持された基板の表面に現像液
を供給する現像液供給ノズルと、この現像液供給ノズル
を、前記基板保持手段に保持され静止した状態の基板の
表面と平行に基板の一端の現像液供給開始位置から他端
の現像液供給終了位置まで直線的に移動させて、現像液
供給ノズルから基板の表面全体に現像液が供給されるよ
うにする現像液供給ノズル移動手段とを備えた基板の現
像処理装置において、基板の直径もしくは幅と同等以上
の吐出幅を有し、前記基板保持手段に保持された基板の
表面にリンス液を供給するリンス液供給ノズルと、この
リンス液供給ノズルを、前記基板保持手段に保持され静
止した状態の前記基板の表面と平行に基板の一端の前記
現像液供給開始位置から他端の前記現像液供給終了位置
まで直線的に移動させて、前記現像液供給ノズルから表
面全体に現像液が供給されて所定時間経過した後の基板
の表面全体に前記リンス液供給ノズルからリンス液が供
給され基板の表面に形成されたフォトレジスト膜の現像
が停止されるようにするリンス液供給ノズル移動手段と
を設けたことを特徴とする。According to a fifth aspect of the present invention, there is provided a substrate holding means for holding a substrate having a photoresist film formed on its surface in a horizontal posture, and a discharge width equal to or larger than the diameter or width of the substrate. A developing solution supply nozzle for supplying a developing solution to the surface of the substrate held by the means, and the developing solution supply nozzle at one end of the substrate in parallel with the surface of the substrate held by the substrate holding means and being stationary. A substrate provided with a developer supply nozzle moving means for linearly moving from the supply start position to the developer supply end position at the other end so that the developer is supplied from the developer supply nozzle to the entire surface of the substrate. In the developing processing apparatus, the rinse liquid supply nozzle having a discharge width equal to or larger than the diameter or width of the substrate and supplying the rinse liquid to the surface of the substrate held by the substrate holding means, and the rinse liquid supply nozzle. Is moved linearly from the developing solution supply start position at one end of the substrate to the developing solution supply end position at the other end in parallel with the surface of the substrate held by the substrate holding means and in a stationary state, The developer is supplied to the entire surface from the liquid supply nozzle, and after a lapse of a predetermined time, the rinse liquid is supplied to the entire surface of the substrate from the rinse liquid supply nozzle to stop the development of the photoresist film formed on the surface of the substrate. And a rinsing liquid supply nozzle moving means.
【００１２】請求項６に係る発明は、請求項５記載の現
像処理装置において、現像液供給ノズルとリンス液供給
ノズルとを、平面視において基板を中心として所定の角
度をなすようにそれぞれ配置し、また、前記現像液供給
ノズルから表面全体に現像液が供給された基板を保持す
る基板保持手段を鉛直軸回りに回動させる回転駆動手段
と、この回動駆動手段によって回動させられる前記基板
保持手段に保持された基板の一端の現像液供給開始位置
の角度位置を検出する角度位置検出手段と、この角度位
置検出手段の検出結果に基づいて基板を、基板の一端の
前記現像液供給開始位置が前記リンス液供給ノズルに対
向する角度位置で停止させる回転停止手段とを設けたこ
とを特徴とする。According to a sixth aspect of the present invention, in the developing apparatus according to the fifth aspect, the developing solution supply nozzle and the rinse solution supply nozzle are arranged so as to form a predetermined angle with the substrate as a center in a plan view. Also, a rotation driving means for rotating a substrate holding means for holding the substrate having the developing solution supplied to the entire surface from the developing solution supply nozzle about a vertical axis, and the substrate rotated by the rotating drive means. An angular position detection unit that detects the angular position of the developing solution supply start position at one end of the substrate held by the holding unit, and the substrate is started at the one end of the substrate based on the detection result of this angular position detection unit. Rotation stop means for stopping the position at an angular position facing the rinse liquid supply nozzle is provided.
【００１３】請求項７に係る発明は、請求項５または請
求項６記載の現像処理装置において、リンス液供給ノズ
ルを、その下端側がリンス液供給ノズルの移動方向に突
き出るように傾斜して保持し、リンス液供給ノズルの下
端から吐出されるリンス液の、基板に対する相対吐出速
度が、基板に対するリンス液供給ノズルの相対移動速度
より大きくなるようにしたことを特徴とする。According to a seventh aspect of the present invention, in the development processing apparatus according to the fifth or sixth aspect, the rinse liquid supply nozzle is held while being inclined so that the lower end side thereof projects in the moving direction of the rinse liquid supply nozzle. The relative discharge speed of the rinse liquid discharged from the lower end of the rinse liquid supply nozzle with respect to the substrate is higher than the relative movement speed of the rinse liquid supply nozzle with respect to the substrate.
【００１４】請求項８に係る発明は、請求項５または請
求項６記載の現像処理装置において、リンス液供給ノズ
ルを、その下端側がリンス液供給手段ノズルの移動方向
と逆方向に突き出るように傾斜して保持し、リンス液供
給ノズルの下端から吐出されるリンス液の、基板に対す
る相対吐出速度が、基板に対するリンス液供給ノズルの
相対移動速度より小さくなるようにしたことを特徴とす
る。According to an eighth aspect of the invention, in the developing treatment apparatus according to the fifth or sixth aspect, the rinse liquid supply nozzle is inclined so that the lower end side thereof projects in the direction opposite to the moving direction of the rinse liquid supply means nozzle. The relative discharge speed of the rinse liquid discharged from the lower end of the rinse liquid supply nozzle with respect to the substrate is smaller than the relative moving speed of the rinse liquid supply nozzle with respect to the substrate.
【００１５】請求項１に係る発明の基板の現像処理方法
では、基板の表面全体に現像液が供給されて所定時間経
過した後に、リンス液供給ノズルが基板と平行に、現像
液供給ノズルによる現像液の供給が開始された基板の一
端位置から現像液の供給が終了した基板の他端位置まで
直線的に移動することにより、基板の表面全体にリンス
液が供給される。したがって、基板の表面全体に被着形
成されたフォトレジスト膜において、先に現像液と接触
した部分ほど、早い時期にリンス液が供給されて現像液
による現像が停止させられ、後から現像液と接触した部
分ほど、遅い時期にリンス液が供給されて現像液による
現像が停止させられる。この結果、フォトレジスト膜の
現像時間が基板の各位置においてほぼ等しくなる。In the method of developing a substrate according to the first aspect of the present invention, after the developing solution is supplied to the entire surface of the substrate and a predetermined time has elapsed, the rinse solution supply nozzle is parallel to the substrate and developed by the developing solution supply nozzle. The rinse liquid is supplied to the entire surface of the substrate by linearly moving from one end position of the substrate where the supply of the liquid is started to the other end position of the substrate where the supply of the developer is completed. Therefore, in the photoresist film deposited on the entire surface of the substrate, the rinse liquid is supplied earlier to stop the development by the developing solution, and the portion that comes into contact with the developing solution earlier is stopped by the developing solution. The rinsing liquid is supplied to the contact portion at a later time, and the development by the developing liquid is stopped. As a result, the development time of the photoresist film is almost equal at each position on the substrate.
【００１６】請求項２に係る発明の現像処理方法では、
現像液供給ノズルの待機位置とリンス液供給ノズルの待
機位置とを違えることができるため、両ノズルの配置関
係を適宜選定することにより、スペースの有効利用を図
ることが可能になる。In the development processing method of the invention according to claim 2,
Since the standby position of the developing solution supply nozzle and the standby position of the rinse solution supply nozzle can be different from each other, the space can be effectively used by appropriately selecting the arrangement relationship of both nozzles.
【００１７】請求項３に係る発明の現像処理方法では、
リンス液供給ノズルの下端から基板の表面上のフォトレ
ジスト膜面に向かって吐出されるリンス液の、基板に対
する相対吐出速度が、基板に対するリンス液供給ノズル
の相対移動速度より大きくなるので、リンス液供給ノズ
ルが基板に対し垂直に保持されて移動する場合に比べ
て、リンス液がフォトレジスト膜面へ勢い良く吐出され
る。このため、リンス液により、フォトレジスト膜の現
像に伴って生じたレジストの滓や現像液中に溶解したレ
ジスト成分などが効果的に掻き出される。In the development processing method of the invention according to claim 3,
Since the relative discharge speed of the rinse liquid discharged from the lower end of the rinse liquid supply nozzle toward the photoresist film surface on the surface of the substrate to the substrate is higher than the relative movement speed of the rinse liquid supply nozzle to the substrate, the rinse liquid Compared with the case where the supply nozzle moves while being held vertically to the substrate, the rinse liquid is vigorously ejected onto the photoresist film surface. Therefore, the rinsing solution effectively scrapes out the residue of the resist generated by the development of the photoresist film and the resist components dissolved in the developing solution.
【００１８】請求項４に係る発明の現像処理方法では、
リンス液供給ノズルの下端から基板の表面上のフォトレ
ジスト膜面に向かって吐出されるリンス液の、基板に対
する相対吐出速度が、基板に対するリンス液供給ノズル
の相対移動速度より小さくなるので、リンス液供給ノズ
ルが基板に対し垂直に保持されて移動する場合に比べ
て、リンス液がフォトレジスト膜面へ緩やかに吐出され
る。このため、フォトレジストの種類により、現像によ
って形成されたレジストパターンが損傷を受けやすいよ
うな場合でも、リンス液の吐出圧力によってレジストパ
ターンが損傷される心配を無くすことができる。In the development processing method of the invention according to claim 4,
The relative discharge speed of the rinse liquid discharged from the lower end of the rinse liquid supply nozzle toward the photoresist film surface on the surface of the substrate is lower than the relative movement speed of the rinse liquid supply nozzle with respect to the substrate. Compared with the case where the supply nozzle moves while being held perpendicularly to the substrate, the rinse liquid is gently discharged onto the photoresist film surface. Therefore, even if the resist pattern formed by development is likely to be damaged depending on the type of photoresist, it is possible to eliminate the risk of damage to the resist pattern due to the discharge pressure of the rinse liquid.
【００１９】請求項５に係る発明の現像処理装置では、
現像液供給ノズル移動手段により、基板の直径もしくは
幅と同等以上の吐出幅をする現像液供給ノズルが、基板
保持手段によって水平姿勢に保持され静止した状態の基
板の表面と平行に基板の一端の現像液供給開始位置から
他端の現像液供給終了位置まで直線的に移動させられ
る。これにより、現像液供給ノズルから基板の表面全体
に現像液が供給され、基板の表面に形成されたフォトレ
ジスト膜が現像される。そして、所定時間経過した後
に、リンス液供給ノズル移動手段により、基板の直径も
しくは幅と同等以上の吐出幅をするリンス液供給ノズル
が、基板保持手段によって水平姿勢に保持され静止した
状態の基板の表面と平行に基板の一端の前記現像液供給
開始位置から他端の前記現像液供給終了位置まで直線的
に移動させられる。これにより、リンス液供給ノズルか
ら基板の表面全体にリンス液が供給され、基板の表面に
形成されたフォトレジスト膜の現像が停止させられる。
したがって、基板の表面全体に被着形成されたフォトレ
ジスト膜において、先に現像液と接触した部分ほど、早
い時期にリンス液が供給されて現像液による現像が停止
させられ、後から現像液と接触した部分ほど、遅い時期
にリンス液が供給されて現像液による現像が停止させら
れる。この結果、フォトレジスト膜の現像時間が基板の
各位置においてほぼ等しくなる。In the development processing apparatus of the invention according to claim 5,
The developing solution supply nozzle moving means moves the developing solution supply nozzle having a discharge width equal to or larger than the diameter or width of the substrate to one end of the substrate in parallel with the surface of the substrate which is held in a horizontal position by the substrate holding means and is stationary. It is linearly moved from the developing solution supply start position to the developing solution supply end position at the other end. As a result, the developing solution is supplied from the developing solution supply nozzle to the entire surface of the substrate, and the photoresist film formed on the surface of the substrate is developed. Then, after a lapse of a predetermined time, the rinse liquid supply nozzle moving means moves the rinse liquid supply nozzle having a discharge width equal to or larger than the diameter or width of the substrate to a stationary state by holding the rinse liquid supply nozzle in a horizontal posture by the substrate holding means. The substrate is linearly moved in parallel with the surface from the developing solution supply start position at one end of the substrate to the developing solution supply end position at the other end. As a result, the rinse liquid is supplied from the rinse liquid supply nozzle to the entire surface of the substrate, and the development of the photoresist film formed on the surface of the substrate is stopped.
Therefore, in the photoresist film deposited on the entire surface of the substrate, the rinse liquid is supplied earlier to stop the development by the developing solution, and the portion that comes into contact with the developing solution earlier is stopped by the developing solution. The rinsing liquid is supplied to the contact portion at a later time, and the development by the developing liquid is stopped. As a result, the development time of the photoresist film is almost equal at each position on the substrate.
【００２０】請求項６に係る発明の現像処理装置では、
現像液供給ノズルとリンス液供給ノズルとが、平面視に
おいて基板を中心として所定の角度をなすようにそれぞ
れ配置されるので、スペースの有効利用が図られる。そ
して、この装置では、基板の表面への現像液の供給後に
おいて、回転駆動手段により基板保持手段が鉛直軸回り
に回動させられ、この際に、角度位置検出手段により、
基板保持手段に保持された基板の一端の現像液供給開始
位置の角度位置が検出される。この角度位置検出手段の
検出結果に基づいて回転停止手段により、基板の一端の
現像液供給開始位置がリンス液供給ノズルに対向した時
に基板が停止させられる。したがって、基板の一端の現
像液供給開始位置とリンス液供給開始位置とが一致する
ことになる。In the developing processing apparatus of the invention according to claim 6,
Since the developing solution supply nozzle and the rinse solution supply nozzle are arranged so as to form a predetermined angle with respect to the substrate in plan view, the space can be effectively used. Further, in this apparatus, after the developing solution is supplied to the surface of the substrate, the substrate holding means is rotated about the vertical axis by the rotation driving means, and at this time, the angular position detecting means
The angular position of the developing solution supply start position at one end of the substrate held by the substrate holding means is detected. The rotation stopping means stops the substrate based on the detection result of the angular position detecting means when the developing solution supply start position at one end of the substrate faces the rinse solution supply nozzle. Therefore, the developing solution supply start position at one end of the substrate and the rinse solution supply start position coincide with each other.
【００２１】請求項７に係る発明の現像処理装置では、
リンス液供給ノズルの下端から基板の表面上のフォトレ
ジスト膜面に向かって吐出されるリンス液の、基板に対
する相対吐出速度が、基板に対するリンス液供給ノズル
の相対移動速度より大きくなる。したがって、リンス液
供給ノズルが基板に対し垂直に保持されて移動する場合
に比べて、リンス液がフォトレジスト膜面へ勢い良く吐
出されるため、リンス液により、フォトレジスト膜の現
像に伴って生じたレジストの滓や現像液中に溶解したレ
ジスト成分などが効果的に掻き出される。In the development processing apparatus of the invention according to claim 7,
The relative discharge speed of the rinse liquid discharged from the lower end of the rinse liquid supply nozzle toward the photoresist film surface on the surface of the substrate is higher than the relative movement speed of the rinse liquid supply nozzle with respect to the substrate. Therefore, as compared with the case where the rinse liquid supply nozzle is held perpendicular to the substrate and moved, the rinse liquid is ejected to the surface of the photoresist film more vigorously, and therefore the rinse liquid causes the development of the photoresist film. The resist residue and the resist component dissolved in the developing solution are effectively scraped.
【００２２】請求項８に係る発明の現像処理装置では、
リンス液供給ノズルの下端から基板の表面上のフォトレ
ジスト膜面に向かって吐出されるリンス液の、基板に対
する相対吐出速度が、基板に対するリンス液供給ノズル
の相対移動速度より小さくなる。したがって、リンス液
供給ノズルが基板に対し垂直に保持されて移動する場合
に比べて、リンス液がフォトレジスト膜面へ緩やかに吐
出されるため、フォトレジストの種類により、現像によ
って形成されたレジストパターンが損傷を受けやすいよ
うな場合でも、リンス液の吐出圧力によってレジストパ
ターンが損傷される心配を無くすことができる。In the development processing apparatus of the invention according to claim 8,
The relative discharge speed of the rinse liquid discharged from the lower end of the rinse liquid supply nozzle toward the photoresist film surface on the surface of the substrate is lower than the relative movement speed of the rinse liquid supply nozzle with respect to the substrate. Therefore, as compared with the case where the rinse liquid supply nozzle is held and moved perpendicularly to the substrate, the rinse liquid is gently discharged to the photoresist film surface. Therefore, depending on the type of the photoresist, the resist pattern formed by development may be changed. Even when the resist pattern is easily damaged, it is possible to prevent the resist pattern from being damaged by the discharge pressure of the rinse liquid.
【００２３】[0023]
【発明の実施の形態】以下、この発明の好適な実施形態
について図面を参照しながら説明する。BEST MODE FOR CARRYING OUT THE INVENTION Preferred embodiments of the present invention will be described below with reference to the drawings.
【００２４】この発明に係る基板の現像処理方法を実施
する装置の構成としては、図１にその１例を模式的に示
すように、表面に露光済みのフォトレジスト膜が被着形
成された基板Ｗを水平姿勢に保持するスピンチャック１
０、このスピンチャック１０の下面側中央に垂設されて
スピンチャック１０を鉛直軸回りに回転自在に支持する
回転支軸１２、この回転支軸１２を回転させてスピンチ
ャック１０に保持された基板Ｗを鉛直軸回りに回転させ
るスピンモータ（図示せず）などを備えているほか、現
像液供給ノズル１４およびリンス液供給ノズル１６を有
している。図１中の１８は待機ポット、２０は回収ポッ
トであり、そのほか、図示していないが、基板Ｗ上から
周囲へ飛散する洗浄液を回収するために、スピンチャッ
ク１０に保持された基板Ｗの側方および下方を取り囲む
ようにカップが配設されている。As a constitution of an apparatus for carrying out the method for developing a substrate according to the present invention, a substrate having an exposed photoresist film deposited on the surface thereof is schematically shown in FIG. 1 as an example. Spin chuck 1 for holding W in a horizontal position
0, a rotation support shaft 12 vertically provided at the center of the lower surface side of the spin chuck 10 to rotatably support the spin chuck 10 about a vertical axis, and a substrate held on the spin chuck 10 by rotating the rotation support shaft 12. In addition to a spin motor (not shown) for rotating W about a vertical axis, a developer supply nozzle 14 and a rinse solution supply nozzle 16 are provided. In FIG. 1, 18 is a standby pot and 20 is a recovery pot. In addition, although not shown, the side of the substrate W held by the spin chuck 10 in order to recover the cleaning liquid scattered from above the substrate W to the surroundings. A cup is arranged so as to surround the lower side and the lower side.
【００２５】現像液供給ノズル１４およびリンス液供給
ノズル１６はそれぞれ、詳細な構成は図示しないが、棒
状をなしていて水平姿勢に保持されており、基板Ｗの直
径もしくは幅と同等以上の吐出幅を有している。すなわ
ち、現像液供給ノズル１４およびリンス液供給ノズル１
６はそれぞれ、基板Ｗが半導体ウエハのように円形状を
なしているときは、基板Ｗの直径と同等もしくはそれ以
上の長さのスリット状吐出口を下端に有し、基板ＷがＬ
ＣＤ用ガラス基板のように短形状をなしているときは、
基板Ｗの、現像液供給ノズル１４およびリンス液供給ノ
ズル１６と直交する方向における幅と同等もしくはそれ
以上の長さのスリット状吐出口を下端に有している。ま
た、図示していないが、現像液供給ノズル１４およびリ
ンス液供給ノズル１６をそれぞれ別々に、スピンチャッ
ク１０に保持された基板Ｗの表面に各ノズルの下端を近
接させた状態で基板Ｗの一端位置から他端位置まで直線
的に移動させるための現像液供給ノズル移動機構および
リンス液供給ノズル移動機構が設けられている。The developing solution supply nozzle 14 and the rinsing solution supply nozzle 16 each have a rod-like shape and are held in a horizontal posture, although their detailed structures are not shown, and the discharge width is equal to or larger than the diameter or width of the substrate W. have. That is, the developing solution supply nozzle 14 and the rinse solution supply nozzle 1
When the substrate W has a circular shape like a semiconductor wafer, each 6 has a slit-shaped discharge port having a length equal to or longer than the diameter of the substrate W at the lower end, and the substrate W is L
When it has a short shape like a glass substrate for CD,
The lower end of the substrate W has a slit-shaped ejection port having a length equal to or longer than the width of the substrate W in the direction orthogonal to the developing solution supply nozzle 14 and the rinse solution supply nozzle 16. Although not shown, the developing solution supply nozzle 14 and the rinse solution supply nozzle 16 are separately provided at one end of the substrate W in a state where the lower ends of the nozzles are brought close to the surface of the substrate W held by the spin chuck 10. A developer supply nozzle moving mechanism and a rinse liquid supply nozzle moving mechanism for linearly moving from the position to the other end position are provided.
【００２６】次に、図１に示した現像処理装置を使用し
て基板の現像処理を行う手順を図２に基づいて説明す
る。Next, the procedure of developing the substrate using the developing apparatus shown in FIG. 1 will be described with reference to FIG.
【００２７】まず、図２の（ａ）に示すように、スピン
チャック１０に保持された基板Ｗを静止させた状態で、
現像液供給ノズル１４を基板Ｗの表面と平行に基板Ｗの
一端位置から他端位置まで直線的に移動させ、現像液供
給ノズル１４の下端のスリット状吐出口から基板Ｗの表
面へ現像液を液膜状に供給する。これにより、図２の
（ｂ）に示すように、フォトレジスト膜が形成された基
板Ｗの表面全体を覆うように現像液２が表面張力で基板
Ｗ上に盛られて、現像液層２２が形成される。このとき
の現像液供給ノズル１４の移動速度は、例えば５０〜５
００ｍｍ／秒、好ましくは２００ｍｍ／秒程度とされ
る。また、現像液の吐出流量は、基板Ｗの大きさによっ
て現像液供給ノズル１４の吐出幅を変える必要があるた
め一定ではないが、直径が８インチである半導体ウエハ
を現像処理する場合には、例えば２．５ ｌ／分程度で
ある。現像液供給ノズル１４の下端と基板Ｗの表面との
間の距離は、現像液供給ノズル１４の移動速度や現像液
の種類などによって最適値が異なり、０．３〜１０ｍｍ
の範囲で適宜選択されるが、例えば０．５ｍｍ程度とさ
れる。First, as shown in FIG. 2A, with the substrate W held by the spin chuck 10 being stationary,
The developing solution supply nozzle 14 is linearly moved from one end position to the other end position of the substrate W in parallel with the surface of the substrate W, and the developing solution is supplied to the surface of the substrate W from the slit-shaped ejection port at the lower end of the developing solution supply nozzle 14. Supply in liquid film form. As a result, as shown in FIG. 2B, the developer 2 is spread on the substrate W by surface tension so as to cover the entire surface of the substrate W on which the photoresist film is formed, and the developer layer 22 is formed. It is formed. The moving speed of the developing solution supply nozzle 14 at this time is, for example, 50 to 5
00 mm / sec, preferably about 200 mm / sec. Further, the discharge flow rate of the developing solution is not constant because it is necessary to change the discharging width of the developing solution supply nozzle 14 depending on the size of the substrate W, but when developing a semiconductor wafer having a diameter of 8 inches, For example, it is about 2.5 l / min. An optimum value of the distance between the lower end of the developer supply nozzle 14 and the surface of the substrate W varies depending on the moving speed of the developer supply nozzle 14, the type of the developer, and the like.
Is appropriately selected within the range of, but is, for example, about 0.5 mm.
【００２８】基板Ｗの表面全体を覆うように現像液層２
２が形成されると、そのままの状態で基板Ｗを静止させ
て所定時間保持し、基板Ｗ上に盛られた現像液によって
基板Ｗ表面のフォトレジスト膜を現像する。この際、現
像液層２２中の泡を消すために、基板Ｗ上に盛られた現
像液が遠心力によって基板Ｗから振り落とされない程度
の低速で、基板Ｗを連続的に回転させ或いは間欠的に回
転させるようにしてもよい。The developer layer 2 covers the entire surface of the substrate W.
After the formation of No. 2, the substrate W is kept still for a predetermined time, and the photoresist film on the surface of the substrate W is developed by the developing solution deposited on the substrate W. At this time, in order to eliminate bubbles in the developing solution layer 22, the developing solution deposited on the substrate W is continuously rotated or intermittently at a low speed such that the developing solution is not shaken off from the substrate W by centrifugal force. You may make it rotate.
【００２９】基板Ｗの表面全体に現像液層２２が形成さ
れて所定時間経過した後に、図２の（ｃ）に示すように
基板Ｗを静止させた状態で、リンス液供給ノズル１６を
基板Ｗの表面と平行に、基板Ｗの、現像液供給ノズル１
４による現像液の供給が開始された一端位置から現像液
の供給が終了した他端位置まで直線的に移動させ、リン
ス液供給ノズル１６の下端のスリット状吐出口から基板
Ｗの表面へリンス液、例えば純水を吐出して、現像液に
よるフォトレジスト膜の現像を停止させる。なお、現像
液によるフォトレジスト膜の現像を進行させる際に基板
Ｗを低速で回転させるようにした場合は、リンス液供給
ノズル１６による純水の供給を開始した基板Ｗの一端位
置が、現像液供給ノズル１４による現像液の供給を開始
した基板Ｗの一端位置に一致するように、基板Ｗの回転
角度を制御する必要がある。この制御は、後述するよう
な装置構成及び動作に準じて行うようにすればよい。After the developing solution layer 22 is formed on the entire surface of the substrate W and a predetermined time has passed, the rinse liquid supply nozzle 16 is moved to the substrate W while the substrate W is stationary as shown in FIG. Developer supply nozzle 1 for the substrate W parallel to the surface of
4 is linearly moved from one end position where the supply of the developing solution is started to the other end position where the supply of the developing solution is completed, and the rinse solution is supplied from the slit-shaped ejection port at the lower end of the rinse solution supply nozzle 16 to the surface of the substrate W. For example, pure water is discharged to stop the development of the photoresist film by the developing solution. When the substrate W is rotated at a low speed when the development of the photoresist film by the developing solution proceeds, one end position of the substrate W at which the rinsing solution supply nozzle 16 starts to supply pure water is located at the developing solution. It is necessary to control the rotation angle of the substrate W so as to coincide with the one end position of the substrate W at which the supply of the developing solution by the supply nozzle 14 is started. This control may be performed according to the device configuration and operation described later.
【００３０】リンス液供給ノズル１６の移動速度は、現
像液供給ノズル１４の移動速度と同等にする。このよう
にすることにより、基板Ｗ上において、現像液が順次供
給されていった方向に、純水が順次吐出されてフォトレ
ジスト膜の現像が停止されていく。したがって、基板Ｗ
の全面においてフォトレジスト膜の現像処理時間が均等
になる。但し、リンス液供給ノズル１６の移動速度を現
像液供給ノズル１４の移動速度と厳密に一致させる必要
は必ずしも無く、現像結果によっては若干調整するよう
にしてもよい。The moving speed of the rinse liquid supply nozzle 16 is made equal to the moving speed of the developer supply nozzle 14. By doing so, deionized water is sequentially discharged on the substrate W in the direction in which the developing solution was sequentially supplied, and the development of the photoresist film is stopped. Therefore, the substrate W
The development processing time of the photoresist film becomes uniform over the entire surface of the. However, the moving speed of the rinse solution supply nozzle 16 does not necessarily need to be exactly the same as the moving speed of the developer supply nozzle 14, and may be adjusted slightly depending on the development result.
【００３１】リンス液供給ノズル１６からの純水の吐出
流量は、現像液の吐出流量と同じ程度か、或いは現像液
の吐出流量よりやや多くする。例えば、現像液の吐出流
量が２．５ ｌ／分であった場合に、純水の吐出流量を
４．０ ｌ／分程度とする。また、リンス液供給ノズル
１６の下端と基板Ｗの表面との間の距離は、現像液の供
給の場合と同様にしても構わないが、リンス液供給ノズ
ル１６の下端が基板Ｗ上に盛られた現像液に接触しない
程度の距離だけ、例えば５ｍｍ程度以上、リンス液供給
ノズル１６の下端を基板Ｗの表面から離した方が、リン
ス液供給ノズル１６の下端の吐出口の汚染を避ける点で
は望ましい。The discharge flow rate of pure water from the rinse liquid supply nozzle 16 is about the same as the discharge flow rate of the developing solution or slightly higher than the discharge flow rate of the developing solution. For example, when the discharge flow rate of the developing solution is 2.5 l / min, the discharge flow rate of pure water is set to about 4.0 l / min. The distance between the lower end of the rinse liquid supply nozzle 16 and the surface of the substrate W may be the same as in the case of supplying the developing liquid, but the lower end of the rinse liquid supply nozzle 16 is placed on the substrate W. In order to avoid contamination of the discharge port at the lower end of the rinse liquid supply nozzle 16, it is preferable to separate the lower end of the rinse liquid supply nozzle 16 from the surface of the substrate W by a distance that does not come into contact with the developing solution, for example, about 5 mm or more. desirable.
【００３２】なお、このリンス液供給ノズル１６による
純水の吐出工程は、現像液によるフォトレジスト膜の現
像を停止させることが目的であるので、基板Ｗの表面上
に存在する現像液のすべてを純水で置換する必要は無
い。これは、現像液が盛られた基板Ｗの表面へ純水が供
給された時点で、基板Ｗ上の現像液は純水によって薄め
られることにより、その規定度が低下することになるの
で、現像液の規定度の変化に敏感なフォトレジストの現
像反応は直ちに停止するためである。また、基板Ｗ上に
残留した現像液や現像液に溶解したレジスト成分など
は、次の工程で基板Ｗ上から洗い流すようにすればよ
い。Since the purpose of this pure water discharge step by the rinse liquid supply nozzle 16 is to stop the development of the photoresist film by the developer, all the developer existing on the surface of the substrate W is removed. It is not necessary to replace with pure water. This is because when the pure water is supplied to the surface of the substrate W on which the developing solution is deposited, the developing solution on the substrate W is diluted with the pure water, so that the normality of the developing solution is lowered. This is because the development reaction of the photoresist, which is sensitive to changes in the normality of the liquid, is immediately stopped. Further, the developing solution remaining on the substrate W and the resist component dissolved in the developing solution may be washed off from the substrate W in the next step.
【００３３】基板Ｗの表面へ純水の吐出が終了すると、
図２の（ｄ）に示すように、基板Ｗを回転させながら、
従来の装置に設けられているものと同様の純水供給ノズ
ル２４から純水２６を基板Ｗの中心部分へ或いは基板Ｗ
の中心部分およびその他の部分へ供給し、基板Ｗの表面
を所定時間洗浄して、基板Ｗ上に残留した現像液や現像
液に溶解したレジスト成分などを基板Ｗ上から洗い流
す。なお、純水供給ノズル２４の代わりにリンス液供給
ノズル１６を使用して基板Ｗの表面の洗浄を行うように
してもよい。この場合には、リンス液供給ノズル１６
を、その長手方向が基板Ｗの直径方向と一致する位置へ
移動（短形状の基板である場合は、リンス液供給ノズル
１６が基板の２本の対角線の交点を通る直線上に位置す
るように移動）させて停止させ、基板Ｗを回転させなが
らリンス液供給ノズル１６下端のスリット状吐出口から
基板Ｗの表面へ純水を吐出して、基板Ｗの表面を洗浄す
るようにすればよい。When the discharge of pure water onto the surface of the substrate W is completed,
As shown in FIG. 2D, while rotating the substrate W,
Pure water 26 is supplied to the central portion of the substrate W from the pure water supply nozzle 24 similar to that provided in the conventional apparatus or to the substrate W.
Is supplied to the central portion and other portions of the substrate W and the surface of the substrate W is washed for a predetermined time to wash away the developing solution remaining on the substrate W and the resist component dissolved in the developing solution from the substrate W. Instead of the pure water supply nozzle 24, the rinse liquid supply nozzle 16 may be used to clean the surface of the substrate W. In this case, the rinse liquid supply nozzle 16
To a position whose longitudinal direction coincides with the diametrical direction of the substrate W (in the case of a short substrate, the rinse liquid supply nozzle 16 is positioned on a straight line passing through the intersection of two diagonal lines of the substrate). The surface of the substrate W may be cleaned by ejecting pure water onto the surface of the substrate W from the slit-shaped ejection openings at the lower end of the rinse liquid supply nozzle 16 while rotating the substrate W and stopping the movement.
【００３４】基板Ｗの表面の洗浄が終わると、基板Ｗへ
の純水の供給を停止させた後、図２の（ｅ）に示すよう
に、基板Ｗを高速で回転させて、基板Ｗをスピン乾燥さ
せる。これで、一連の現像処理工程が終了する。When the cleaning of the surface of the substrate W is completed, the supply of pure water to the substrate W is stopped, and then the substrate W is rotated at a high speed as shown in FIG. Spin dry. This completes a series of development processing steps.
【００３５】次に、図３に要部の概略構成を示した現像
処理装置では、図４の（Ａ）に平面図を示すように、現
像液供給ノズル１４の待機位置とリンス液供給ノズル１
６の待機位置とが、基板Ｗの回転中心に対し互いに１８
０°の角度をなすようにそれぞれ配置されている。そし
て、スピンチャック１０の回転支軸１２に、その回転角
度位置を検知する手段、例えばエンコーダ３０が付設さ
れている。また、エンコーダ３０からの信号を受けてス
ピンモータ２８を制御する制御器３２が設けられてい
る。Next, in the development processing apparatus whose schematic structure is shown in FIG. 3, the standby position of the developing solution supply nozzle 14 and the rinse solution supply nozzle 1 are shown in the plan view of FIG.
The standby position of 6 is 18 degrees from each other with respect to the rotation center of the substrate W.
They are arranged so as to form an angle of 0 °. Then, the rotation support shaft 12 of the spin chuck 10 is provided with a means for detecting the rotation angle position thereof, for example, an encoder 30. Further, a controller 32 that receives a signal from the encoder 30 and controls the spin motor 28 is provided.
【００３６】図３に示した現像処理装置を使用して基板
の現像処理を行う手順を説明すると、基板Ｗの表面への
現像液の供給および基板Ｗ上に盛られた現像液によるフ
ォトレジスト膜の現像の各工程（図２の（ａ）および
（ｂ）参照）は、図１に示した装置を使用した場合と同
様に行われる。この装置では、基板Ｗの表面全体に現像
液が盛られて所定時間経過した後に、基板Ｗがゆっくり
と回動させられ、エンコーダ３０から出力される信号に
基づいて制御器３２からスピンモータ２８へ制御信号が
送られることにより、現像液供給ノズル１４による現像
液の供給を開始した基板Ｗの一端位置がリンス液供給ノ
ズル１６の待機位置に対向する角度位置で基板Ｗが停止
させられる。なお、現像液によるフォトレジスト膜の現
像を進行させる際に基板Ｗを低速で回転させるようにし
た場合は、そのまま基板Ｗの回転を続けて、所定時間経
過した後に、基板Ｗを、現像液供給開始位置がリンス液
供給ノズル１６の待機位置に対向した角度位置で停止さ
せるようにすればよい。そして、上記した場合と同様
に、基板Ｗを静止させた状態で、リンス液供給ノズル１
６を、現像液供給開始位置である基板Ｗの一端位置から
現像液供給終了位置である基板Ｗの他端位置まで直線的
に基板Ｗの表面と平行に移動させながら、基板Ｗの表面
へ純水を吐出して、現像液によるフォトレジスト膜の現
像を停止させ、その後に、純水による基板Ｗの洗浄およ
びスピン乾燥を行う。A procedure for developing the substrate using the developing apparatus shown in FIG. 3 will be described. Supplying the developing solution to the surface of the substrate W and photoresist film formed on the substrate W by the developing solution. The respective developing steps (see (a) and (b) of FIG. 2) are performed in the same manner as in the case of using the apparatus shown in FIG. In this apparatus, after the developing solution has been deposited on the entire surface of the substrate W and a predetermined time has passed, the substrate W is slowly rotated, and the controller 32 causes the spin motor 28 to move based on a signal output from the encoder 30. By the control signal being sent, the substrate W is stopped at an angular position where one end position of the substrate W at which the supply of the developing solution by the developing solution supply nozzle 14 is started is opposed to the standby position of the rinse solution supply nozzle 16. When the substrate W is rotated at a low speed when the development of the photoresist film by the developing solution is advanced, the substrate W is continuously rotated and the substrate W is supplied with the developing solution after a predetermined time elapses. The start position may be stopped at an angular position facing the standby position of the rinse liquid supply nozzle 16. Then, as in the case described above, the rinse liquid supply nozzle 1 with the substrate W stationary.
6 is moved linearly in parallel with the surface of the substrate W from one end position of the substrate W, which is the developing solution supply start position, to the other end position of the substrate W, which is the development solution supply end position. Water is discharged to stop the development of the photoresist film with the developing solution, and then the substrate W is washed with pure water and spin-dried.
【００３７】なお、現像液供給ノズル１４とリンス液供
給ノズル１６との配置角度は、図４の（Ａ）に示すよう
に１８０°とするほか、他の機器との配置関係などを考
慮して適宜設計すればよく、例えば図４の（Ｂ）に示す
ように９０°としてもよい。また、基板Ｗを回動させた
後に、基板Ｗを、現像液供給ノズル１４による現像液の
供給が開始された基板Ｗの一端位置がリンス液供給ノズ
ル１６に対向する角度位置で停止させるための制御機構
としては、上記実施形態のようにエンコーダ３０を使用
して回転支軸１２の回転角度位置を検知する構成のもの
に限らず、種々の周知の技術を利用すればよい。The arrangement angle between the developing solution supply nozzle 14 and the rinse solution supply nozzle 16 is 180 ° as shown in FIG. 4A, and the arrangement relationship with other equipment is taken into consideration. It may be designed as appropriate, and may be 90 °, for example, as shown in FIG. Further, after the substrate W is rotated, the substrate W is stopped at an angular position where one end position of the substrate W at which the supply of the developing solution by the developing solution supply nozzle 14 is started is opposed to the rinse solution supply nozzle 16. The control mechanism is not limited to the one configured to detect the rotational angle position of the rotary support shaft 12 by using the encoder 30 as in the above embodiment, and various known techniques may be used.
【００３８】また、図５に概略図を示すように、リンス
液供給ノズル１６を傾けて保持する機構を設けるように
することもできる。すなわち、図５の（Ａ）に示すよう
に、リンス液供給ノズル１６を、その下端側がノズル移
動方向に突き出るように傾斜させて保持し、リンス液供
給ノズル１６下端のスリット状吐出口から吐出される純
水の、基板Ｗに対する相対吐出速度が、基板Ｗに対する
リンス液供給ノズル１６の相対移動速度よりも大きくな
るようにする。これにより、リンス液供給ノズル１６が
基板Ｗに対し垂直に保持されて移動する場合に比べて、
純水が基板Ｗ表面のフォトレジスト膜面へ勢い良く吐出
されることになり、フォトレジスト膜の現像に伴って生
じたレジストの滓や現像液に溶解したレジスト成分など
が純水によって効果的に掻き出されることになる。ま
た、図５の（Ｂ）に示すように、リンス液供給ノズル１
６を、その下端側がノズル移動方向と逆方向に突き出る
ように傾斜させて保持し、リンス液供給ノズル１６下端
のスリット状吐出口から吐出される純水の、基板Ｗに対
する相対吐出速度が、基板Ｗに対するリンス液供給ノズ
ル１６の相対移動速度よりも小さくなるようにしてもよ
い。このようにしたときは、リンス液供給ノズル１６が
基板Ｗに対し垂直に保持されて移動する場合に比べて、
純水がフォトレジスト膜面へ緩やかに吐出されることに
なり、現像後に形成されたレジストパターンが損傷を受
けやすいような場合でも、純水の吐出圧力によってレジ
ストパターンが損傷されることを防止することができ
る。リンス液供給ノズル１６を基板に対し垂直に保持す
るか、ノズル移動方向の側へ傾けるか或いはノズル移動
方向の反対側へ傾けるかは、使用するフォトレジストの
種類などによって適宜選定すればよい。Further, as shown in the schematic view of FIG. 5, it is possible to provide a mechanism for tilting and holding the rinse liquid supply nozzle 16. That is, as shown in FIG. 5A, the rinse liquid supply nozzle 16 is held so as to be inclined such that the lower end side thereof projects in the nozzle movement direction, and is discharged from the slit-shaped discharge port at the lower end of the rinse liquid supply nozzle 16. The relative ejection speed of pure water to the substrate W is set to be higher than the relative movement speed of the rinse liquid supply nozzle 16 to the substrate W. As a result, as compared with the case where the rinse liquid supply nozzle 16 is held and moved perpendicularly to the substrate W,
Pure water is ejected vigorously onto the surface of the photoresist film on the surface of the substrate W, so that the debris of the resist generated by the development of the photoresist film and the resist components dissolved in the developing solution are effectively treated by the pure water. Will be scratched out. Further, as shown in FIG. 5B, the rinse liquid supply nozzle 1
6 is held so as to be inclined such that the lower end side thereof projects in the direction opposite to the nozzle movement direction, and the relative discharge speed of pure water discharged from the slit-shaped discharge port at the lower end of the rinse liquid supply nozzle 16 to the substrate W is It may be smaller than the relative moving speed of the rinse liquid supply nozzle 16 with respect to W. In this case, compared with the case where the rinse liquid supply nozzle 16 is held and moved perpendicularly to the substrate W,
Even if the pure water is gently discharged onto the photoresist film surface and the resist pattern formed after development is easily damaged, the damage of the resist pattern due to the pure water discharge pressure is prevented. be able to. Whether the rinse liquid supply nozzle 16 is held perpendicular to the substrate, tilted toward the nozzle movement direction, or tilted toward the opposite side to the nozzle movement direction may be appropriately selected depending on the type of photoresist used and the like.
【００３９】[0039]
【発明の効果】基板の直径もしくは幅と同等以上の吐出
幅を有する現像液供給ノズルを、水平姿勢に保持され静
止した状態の基板の表面と平行に基板の一端から他端ま
で直線的に移動させ、現像液供給ノズルから基板の表面
全体に現像液を供給し液盛りする方法で基板の現像処理
を行う場合において、請求項１に係る発明の方法を使用
するようにしたときは、基板の表面に形成されたフォト
レジスト膜の現像時間が基板上の各位置においてほぼ等
しくなるため、現像むらが発生する心配が無くなり、ま
た、現像後におけるレジストパターンの線幅の面内寸法
均一性が得られることとなる。EFFECTS OF THE INVENTION A developer supply nozzle having a discharge width equal to or larger than the diameter or width of a substrate is moved linearly from one end of the substrate to the other end in parallel with the surface of the substrate which is held stationary in a horizontal posture. In the case of developing the substrate by the method of supplying the developing solution from the developing solution supply nozzle to the entire surface of the substrate and piling the developing solution, when the method of the invention according to claim 1 is used, Since the development time of the photoresist film formed on the surface is almost the same at each position on the substrate, there is no concern of uneven development, and the in-plane uniformity of the line width of the resist pattern after development is obtained. Will be done.
【００４０】請求項２に係る発明の現像処理方法では、
現像液供給ノズルとリンス液供給ノズルとの配置関係を
適宜選定することにより、スペースの有効利用を図っ
て、装置の小型化を実現することができる。In the development processing method of the invention according to claim 2,
By appropriately selecting the arrangement relationship between the developing solution supply nozzle and the rinse solution supply nozzle, the space can be effectively used and the apparatus can be downsized.
【００４１】請求項３に係る発明の現像処理方法では、
現像後における通常の洗浄の前に、フォトレジスト膜の
現像に伴って生じたレジストの滓や現像液に溶解したレ
ジスト成分などがリンス液によって効果的に掻き出され
るので、基板の洗浄効果が高まる。In the developing method of the invention according to claim 3,
Prior to normal cleaning after development, the rinse liquid effectively scrapes off the resist residue and the resist components dissolved in the developer that accompany the development of the photoresist film, thus enhancing the cleaning effect on the substrate. .
【００４２】請求項４に係る発明の現像処理方法では、
現像後に形成されたレジストパターンが損傷を受けやす
いような場合でも、リンス液の吐出圧力によってレジス
トパターンが損傷されることが防止される。In the development processing method of the invention according to claim 4,
Even if the resist pattern formed after the development is likely to be damaged, the resist pattern is prevented from being damaged by the discharge pressure of the rinse liquid.
【００４３】請求項５に係る発明の装置を使用したとき
は、基板の直径もしくは幅と同等以上の吐出幅を有する
現像液供給ノズルを、水平姿勢に保持され静止した状態
の基板の表面と平行に基板の一端から他端まで直線的に
移動させ、現像液供給ノズルから基板の表面全体に現像
液を供給し液盛りして基板の現像処理を行う場合に、基
板の表面に形成されたフォトレジスト膜の現像時間が基
板上の各位置においてほぼ等しくなるため、現像むらが
発生する心配が無くなり、また、現像液におけるレジス
トパターンの線幅の面内寸法均一性が得られる。When the apparatus according to the fifth aspect of the invention is used, the developer supply nozzle having a discharge width equal to or larger than the diameter or width of the substrate is parallel to the surface of the substrate which is held in a horizontal position and is stationary. When the substrate is developed by linearly moving the substrate from one end to the other end and supplying the developing solution from the developing solution supply nozzle to the entire surface of the substrate to develop the substrate, the photo formed on the surface of the substrate Since the development time of the resist film is substantially equal at each position on the substrate, there is no concern that development unevenness will occur, and in-plane dimensional uniformity of the line width of the resist pattern in the developing solution can be obtained.
【００４４】請求項６に係る発明の現像処理装置は、ス
ペースが有効利用されて、小型化される。In the developing processing apparatus according to the sixth aspect of the invention, the space is effectively used and the size is reduced.
【００４５】請求項７に係る発明の現像処理装置では、
現像後における通常の洗浄の前に、フォトレジスト膜の
現像に伴って生じたレジストの滓や現像液に溶解したレ
ジスト成分などがリンス液によって効果的に掻き出され
るので、基板の洗浄効果を高めることができる。In the developing processing apparatus of the invention according to claim 7,
Prior to normal cleaning after development, the rinse liquid effectively scrapes out the resist residue and the resist components dissolved in the developer that accompany the development of the photoresist film, thus enhancing the cleaning effect on the substrate. be able to.
【００４６】請求項８に係る発明の現像処理装置では、
現像後に形成されたレジストパターンが損傷を受けやす
いような場合でも、リンス液の吐出圧力によってレジス
トパターンが損傷されることを防止することができる。In the development processing apparatus of the invention according to claim 8,
Even if the resist pattern formed after the development is likely to be damaged, it is possible to prevent the resist pattern from being damaged by the discharge pressure of the rinse liquid.
【図１】請求項１に係る発明の基板の現像処理方法を実
施する装置の構成の１例を模式的に示す概略図である。FIG. 1 is a schematic view schematically showing an example of the configuration of an apparatus for carrying out the substrate development processing method of the invention according to claim 1.
【図２】図１に示した現像処理装置を使用して基板の現
像処理を行う手順を説明するための要部概略図である。FIG. 2 is a schematic view of a main part for explaining a procedure of performing a development process on a substrate using the development processing apparatus shown in FIG.
【図３】請求項２に係る発明の現像処理方法を実施する
装置の構成の１例を示す要部概略図である。FIG. 3 is a schematic view of a main part showing an example of the configuration of an apparatus for carrying out the development processing method of the invention according to claim 2;
【図４】現像処理装置の現像液供給ノズルとリンス液供
給ノズルとの配置関係の例を示す概略平面図である。FIG. 4 is a schematic plan view showing an example of an arrangement relationship between a developing solution supply nozzle and a rinse solution supply nozzle of the development processing apparatus.
【図５】（Ａ）は、請求項３に係る発明の現像処理方法
を説明するための概略図であり、（Ｂ）は、請求項４に
係る発明の現像処理方法を説明するための概略図であ
る。5A is a schematic diagram for explaining the developing treatment method of the invention according to claim 3; FIG. 5B is a schematic diagram for explaining the developing treatment method of the invention according to claim 4; It is a figure.
【図６】従来の基板の現像処理方法を説明するための図
であって、（Ａ）は装置要部の概略正面図、（Ｂ）は装
置要部の概略平面図である。6A and 6B are views for explaining a conventional substrate developing method, in which FIG. 6A is a schematic front view of an essential part of the apparatus, and FIG. 6B is a schematic plan view of the essential part of the apparatus.
１０ スピンチャック １２ 回転支軸 １４ 現像液供給ノズル １６ リンス液供給ノズル ２２ 現像液層 ２８ スピンモータ ３０ エンコーダ ３２ 制御器 Ｗ 基板 10 Spin chuck 12 rotation spindle 14 Developer supply nozzle 16 Rinsing liquid supply nozzle 22 Developer layer 28 spin motors 30 encoder 32 controller W board
───────────────────────────────────────────────────── フロントページの続き (58)調査した分野(Int.Cl.7，ＤＢ名) H01L 21/027 ─────────────────────────────────────────────────── ─── Continuation of front page (58) Fields surveyed (Int.Cl. 7 , DB name) H01L 21/027
Claims (8)
幅を有する現像液供給ノズルを、水平姿勢に保持され静
止した状態の基板の表面と平行に基板の一端の現像液供
給開始位置から他端の現像液供給終了位置まで直線的に
移動させ、現像液供給ノズルから基板の表面全体に現像
液を供給して、基板の表面に形成されたフォトレジスト
膜を現像する基板の現像処理方法において、 前記現像液供給ノズルから基板の表面全体に現像液が供
給されて所定時間経過した後に、基板の直径もしくは幅
と同等以上の吐出幅を有するリンス液供給ノズルを、水
平姿勢に保持され静止した状態の前記基板の表面と平行
に基板の一端の前記現像液供給開始位置から他端の前記
現像液供給終了位置まで直線的に移動させ、リンス液供
給ノズルから基板の表面全体にリンス液を供給して、基
板の表面に形成されたフォトレジスト膜の現像を停止さ
せることを特徴とする基板の現像処理方法。1. A developing solution supply nozzle having a discharge width equal to or larger than the diameter or width of the substrate is provided in parallel with the surface of the substrate which is held in a horizontal position and is stationary from the developing solution supply start position at one end of the substrate. A method for developing a substrate, in which the photoresist film formed on the surface of the substrate is developed by linearly moving the developer solution to the end position and supplying the developer solution from the developer solution nozzle to the entire surface of the substrate. After the developing solution is supplied to the entire surface of the substrate from the developing solution supply nozzle for a predetermined time, the rinse solution supply nozzle having a discharge width equal to or larger than the diameter or width of the substrate is held in a horizontal position and stopped. In parallel with the surface of the substrate in the state, it is linearly moved from the developing solution supply start position at one end of the substrate to the developing solution supply end position at the other end, and from the rinse solution supply nozzle to the entire surface of the substrate. By supplying a rinse liquid, a developing method of processing a substrate, characterized in that to stop the development of the photoresist film formed on the surface of the substrate.
現像液が供給された後、基板が鉛直軸回りに所定の角度
分だけ回動させられ、その回動後に基板の一端の現像液
供給開始位置に対向する位置に配置されたリンス液供給
ノズルにより基板の表面へリンス液が供給される請求項
１記載の基板の現像処理方法。2. A developing solution is supplied from a developing solution supply nozzle to the entire surface of the substrate, and then the substrate is rotated around a vertical axis by a predetermined angle, and after the rotation, the developing solution is supplied to one end of the substrate. The substrate development processing method according to claim 1, wherein the rinse liquid is supplied to the surface of the substrate by a rinse liquid supply nozzle arranged at a position facing the start position.
ンス液供給ノズルの移動方向に突き出るように傾斜し、
リンス液供給ノズルの下端から吐出されるリンス液の、
基板に対する相対吐出速度が、基板に対するリンス液供
給ノズルの相対移動速度より大きくなるようにされる請
求項１または請求項２記載の基板の現像処理方法。3. The rinse liquid supply nozzle is inclined so that its lower end side projects in the moving direction of the rinse liquid supply nozzle,
Of the rinse liquid discharged from the lower end of the rinse liquid supply nozzle,
3. The method of developing a substrate according to claim 1, wherein the relative ejection speed with respect to the substrate is set to be higher than the relative movement speed of the rinse liquid supply nozzle with respect to the substrate.
ス液供給ノズルの移動方向と逆方向に突き出るように傾
斜し、リンス液供給ノズルの下端から吐出されるリンス
液の、基板に対する相対吐出速度が、基板に対するリン
ス液供給ノズルの相対移動速度より小さくなるようにさ
れる請求項１または請求項２記載の基板の現像処理方
法。4. The rinse supply nozzle is inclined such that the lower end side thereof projects in the direction opposite to the moving direction of the rinse liquid supply nozzle, and the relative discharge speed of the rinse liquid discharged from the lower end of the rinse liquid supply nozzle with respect to the substrate is 3. The method of developing a substrate according to claim 1, wherein the relative speed of movement of the rinse liquid supply nozzle with respect to the substrate is smaller than that of the rinse liquid supply nozzle.
板を水平姿勢に保持する基板保持手段と、 基板の直径もしくは幅と同等以上の吐出幅を有し、前記
基板保持手段に保持された基板の表面に現像液を供給す
る現像液供給ノズルと、 この現像液供給ノズルを、前記基板保持手段に保持され
静止した状態の基板の表面と平行に基板の一端の現像液
供給開始位置から他端の現像液供給終了位置まで直線的
に移動させて、現像液供給ノズルから基板の表面全体に
現像液が供給されるようにする現像液供給ノズル移動手
段とを備えた基板の現像処理装置において、 基板の直径もしくは幅と同等以上の吐出幅を有し、前記
基板保持手段に保持された基板の表面にリンス液を供給
するリンス液供給ノズルと、 このリンス液供給ノズルを、前記基板保持手段に保持さ
れ静止した状態の前記基板の表面と平行に基板の一端の
前記現像液供給開始位置から他端の前記現像液供給終了
位置まで直線的に移動させて、前記現像液供給ノズルか
ら表面全体に現像液が供給されて所定時間経過した後の
基板の表面全体に前記リンス液供給ノズルからリンス液
が供給され基板の表面に形成されたフォトレジスト膜の
現像が停止されるようにするリンス液供給ノズル移動手
段とを設けたことを特徴とする基板の現像処理装置。5. A substrate holding means for holding a substrate having a photoresist film formed on its surface in a horizontal posture, and a substrate having a discharge width equal to or larger than the diameter or width of the substrate and held by the substrate holding means. A developing solution supply nozzle for supplying a developing solution to the surface of the substrate, and the developing solution supply nozzle from the developing solution supply start position at one end of the substrate to the other end in parallel with the surface of the substrate held stationary by the substrate holding means. A developing solution supply nozzle moving means for linearly moving the developing solution supply end position to supply the developing solution from the developing solution supply nozzle to the entire surface of the substrate, A rinse liquid supply nozzle having a discharge width equal to or larger than the diameter or width of the substrate and supplying a rinse liquid to the surface of the substrate held by the substrate holding means; The surface of the substrate is moved linearly from the developing solution supply start position at one end of the substrate to the developing solution supply end position at the other end in parallel with the surface of the substrate that is held in a stationary state and is stationary. A rinsing solution is supplied from the rinsing solution supply nozzle to the entire surface of the substrate after a predetermined time has elapsed after the developing solution is supplied to the entire surface so that the development of the photoresist film formed on the surface of the substrate is stopped. A substrate development processing apparatus, which is provided with a liquid supply nozzle moving means.
とが、平面視において基板を中心として所定の角度をな
すようにそれぞれ配置され、 前記現像液供給ノズルから表面全体に現像液が供給され
た基板を保持する基板保持手段を鉛直軸回りに回動させ
る回転駆動手段と、 この回動駆動手段によって回動させられる前記基板保持
手段に保持された基板の一端の現像液供給開始位置の角
度位置を検出する角度位置検出手段と、 この角度位置検出手段の検出結果に基づいて基板を、基
板の一端の前記現像液供給開始位置が前記リンス液供給
ノズルに対向する角度位置で停止させる回転停止手段と
が設けられた請求項５記載の基板の現像処理装置。6. A developer supply nozzle and a rinse solution supply nozzle are arranged so as to form a predetermined angle with respect to the substrate in a plan view, and the developer is supplied to the entire surface from the developer supply nozzle. Rotational drive means for rotating the substrate holding means for holding the substrate around the vertical axis, and an angular position of the developing solution supply start position at one end of the substrate held by the substrate holding means rotated by the rotational drive means. And a rotation stop means for stopping the substrate at an angular position where the developing solution supply start position at one end of the substrate faces the rinse solution supply nozzle based on the detection result of the angular position detection means. The development processing apparatus for a substrate according to claim 5, further comprising:
ンス液供給ノズルの移動方向に突き出るように傾斜して
保持され、リンス液供給ノズルの下端から吐出されるリ
ンス液の、基板に対する相対吐出速度が、基板に対する
リンス液供給ノズルの相対移動速度より大きくなる請求
項５または請求項６記載の基板の現像処理装置。7. The relative discharge speed of the rinse liquid discharged from the lower end of the rinse liquid supply nozzle with respect to the substrate, wherein the rinse liquid supply nozzle is held so as to be inclined such that the lower end side thereof projects in the moving direction of the rinse liquid supply nozzle. The developing processing apparatus for a substrate according to claim 5 or 6, wherein the relative moving speed of the rinse liquid supply nozzle with respect to the substrate is higher than that of the rinsing liquid supply nozzle.
ンス液供給手段ノズルの移動方向と逆方向に突き出るよ
うに傾斜して保持され、リンス液供給ノズルの下端から
吐出されるリンス液の、基板に対する相対吐出速度が、
基板に対するリンス液供給ノズルの相対移動速度より小
さくなる請求項５または請求項６記載の基板の現像処理
装置。8. A substrate of rinse liquid discharged from the lower end of the rinse liquid supply nozzle, wherein the rinse liquid supply nozzle is held slanted so that the lower end side thereof projects in the direction opposite to the moving direction of the rinse liquid supply means nozzle. Relative discharge speed to
7. The development processing apparatus for a substrate according to claim 5, wherein the developing liquid supply nozzle has a moving speed lower than the relative movement speed of the rinse liquid supply nozzle with respect to the substrate.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18881996A JP3401141B2 (en) | 1996-06-28 | 1996-06-28 | Substrate development processing method and apparatus |
| KR1019970024773A KR980003828A (en) | 1996-06-28 | 1997-06-14 | Development Process and Device of Substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18881996A JP3401141B2 (en) | 1996-06-28 | 1996-06-28 | Substrate development processing method and apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH1020508A JPH1020508A (en) | 1998-01-23 |
| JP3401141B2 true JP3401141B2 (en) | 2003-04-28 |
Family
ID=16230378
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18881996A Expired - Fee Related JP3401141B2 (en) | 1996-06-28 | 1996-06-28 | Substrate development processing method and apparatus |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP3401141B2 (en) |
| KR (1) | KR980003828A (en) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3612196B2 (en) * | 1997-04-28 | 2005-01-19 | 大日本スクリーン製造株式会社 | Developing apparatus, developing method, and substrate processing apparatus |
| US6692165B2 (en) | 2001-03-01 | 2004-02-17 | Dainippon Screen Mfg. Co., Ltd. | Substrate processing apparatus |
| JP2003257849A (en) | 2001-12-26 | 2003-09-12 | Dainippon Screen Mfg Co Ltd | Substrate developing and processing device |
| US7018481B2 (en) | 2002-01-28 | 2006-03-28 | Kabushiki Kaisha Toshiba | Substrate treating method, substrate-processing apparatus, developing method, method of manufacturing a semiconductor device, and method of cleaning a developing solution nozzle |
| JP3811082B2 (en) | 2002-03-08 | 2006-08-16 | 大日本スクリーン製造株式会社 | Substrate processing apparatus and substrate processing method |
| US6869234B2 (en) | 2002-03-28 | 2005-03-22 | Dainippon Screen Mfg. Co., Ltd. | Developing apparatus and developing method |
| US6752544B2 (en) | 2002-03-28 | 2004-06-22 | Dainippon Screen Mfg. Co., Ltd. | Developing apparatus and developing method |
| KR100485755B1 (en) * | 2002-04-16 | 2005-04-27 | 엘지.필립스 엘시디 주식회사 | Fabrication method of an array panel for liquid crystal display using 4 masks |
| JP3765411B2 (en) | 2002-05-29 | 2006-04-12 | 東京エレクトロン株式会社 | Development processing method and apparatus |
| WO2003105201A1 (en) * | 2002-06-07 | 2003-12-18 | 東京エレクトロン株式会社 | Substrate processing device, substrate processing method, and developing device |
| JP6545464B2 (en) * | 2015-01-07 | 2019-07-17 | 株式会社Ｓｃｒｅｅｎホールディングス | Development method |
-
1996
- 1996-06-28 JP JP18881996A patent/JP3401141B2/en not_active Expired - Fee Related
-
1997
- 1997-06-14 KR KR1019970024773A patent/KR980003828A/en active IP Right Grant
Also Published As
| Publication number | Publication date |
|---|---|
| KR980003828A (en) | 1998-03-30 |
| JPH1020508A (en) | 1998-01-23 |
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