JP3376420B2 - Method for producing zinc oxide-based compound patterned film - Google Patents
Method for producing zinc oxide-based compound patterned filmInfo
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- JP3376420B2 JP3376420B2 JP2000269503A JP2000269503A JP3376420B2 JP 3376420 B2 JP3376420 B2 JP 3376420B2 JP 2000269503 A JP2000269503 A JP 2000269503A JP 2000269503 A JP2000269503 A JP 2000269503A JP 3376420 B2 JP3376420 B2 JP 3376420B2
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- Prior art keywords
- zinc
- film
- aqueous solution
- concentration
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- Inorganic Compounds Of Heavy Metals (AREA)
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、蛍光体、透明電極
などの材料である酸化亜鉛基化合物のパターン化膜の製
造方法に関するものである。パターン化膜の製造は、蛍
光体の場合には高分解ディスプレイとして、また電極の
場合には配線技術として有用である。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for producing a patterned film of a zinc oxide group compound, which is a material for phosphors, transparent electrodes and the like. The manufacture of patterned films is useful as high resolution displays in the case of phosphors and as wiring technology in the case of electrodes.
【０００２】[0002]
【従来の技術】通常、セラミックス膜のパターン化は選
択エッチングによっている。すなわち、セラミック薄膜
を合成した後で、有機物レジスト材を塗布し、その後で
フォトマスクを介して光を当てて選択的に硬化させる。
次に、光の当たらない部分を溶解させてはがし、次にセ
ラミックスのエッチング剤中で処理してセラミックス膜
を部分的に溶かす。そして最後にレジスト材をはがすと
いう加工による。2. Description of the Related Art Usually, patterning of a ceramic film is performed by selective etching. That is, after synthesizing the ceramic thin film, an organic resist material is applied, and thereafter, light is applied through a photomask to selectively cure the resist material.
Next, a portion not exposed to light is melted and peeled off, and then treated in an etching agent for ceramics to partially melt the ceramic film. Finally, the resist material is peeled off.
【０００３】[0003]
【発明が解決しようとする課題】従来のパターン化膜の
製造方法は、上記のように工程が複雑であり、また、エ
ッチング剤の選択や、処理時間、温度、濃度など、適当
なエッチング条件を見い出すのが難しいという問題があ
った。また、セラミック膜のエッチングを超えてしま
い、下地基板までエッチングしてしまう等の問題があっ
た。The conventional method for producing a patterned film has complicated steps as described above, and the appropriate etching conditions such as etching agent selection, processing time, temperature and concentration are required. There was a problem that it was difficult to find. Further, there is a problem that the etching of the ceramic film is exceeded and the underlying substrate is also etched.
【０００４】本発明は、このような問題を解消すべく案
出されたもので、選択エッチングではなく、はじめから
選択的に酸化亜鉛基化合物を成長させる方法を開発する
ことを目的とする。The present invention has been devised to solve such a problem, and an object thereof is to develop a method for selectively growing a zinc oxide group compound from the beginning instead of selective etching.
【０００５】[0005]
【課題を解決するための手段】本発明は、その目的を達
成するため、基板上に形成したパターン化自己組織膜を
テンプレートに用い、フッ化アンモニウム及び可溶性亜
鉛塩類の１種または２種以上を含む水溶液に基板を浸漬
する過程によって、フッ化水酸化物を基板上に選択析出
させ、それを熱分解して酸化物とする方法で製膜するこ
とを特徴とする。フッ化アンモニウムを水溶液に溶かす
かわりに、フッ酸とアンモニア水の混合物を用いても、
その効果は同等である。 すなわち、本発明は、（１）基
板上に形成したパターン化自己組織膜をテンプレートに
用い、フッ化アンモニウム及び可溶性亜鉛塩類の１種ま
たは２種以上を含む水溶液であり、かつフッ化アンモニ
ウムの濃度が亜鉛の濃度に対して２〜１００倍であり、
亜鉛の濃度が０．０００１モル／リットルから１０モル
／リットルである水溶液に基板を浸漬する過程によっ
て、フッ化水酸化物を基板上に選択析出させ、それを熱
分解して酸化物とする方法で製膜することを特徴とする
酸化亜鉛基化合物パターン化膜の製造方法である。 ま
た、本発明は、（２）水溶液がフッ化アンモニウムのか
わりにフッ化アンモニウムの濃度に相当するフッ酸とア
ンモニア水を含む水溶液であることを特徴とする上記
（１）の酸化亜鉛基化合物パターン化膜の製造方法であ
る。 In order to achieve the object, the present invention uses a patterned self-assembled monolayer formed on a substrate as a template and uses ammonium fluoride and a soluble subassembly.
By the process of immersing the substrate in an aqueous solution containing one or more kinds of lead salts , fluorinated hydroxide is selectively deposited on the substrate and pyrolyzed to form an oxide. Characterize. Dissolve ammonium fluoride in aqueous solution
Alternatively, use a mixture of hydrofluoric acid and aqueous ammonia,
The effects are the same. That is, the present invention is based on (1) group
Using the patterned self-assembled film formed on the plate as a template
Use one of ammonium fluoride and soluble zinc salts.
Or an aqueous solution containing two or more kinds, and ammonium fluoride
The concentration of um is 2 to 100 times that of zinc,
Zinc concentration from 0.0001 mol / liter to 10 mol
Per liter of aqueous solution
To selectively deposit the fluorinated hydroxide on the substrate and heat it.
Characterized by forming a film by a method of decomposing it to an oxide
A method for producing a zinc oxide-based compound patterned film. Well
Further, the present invention is (2) whether the aqueous solution is ammonium fluoride.
Instead, use the hydrofluoric acid equivalent to the concentration of ammonium fluoride.
The above, which is an aqueous solution containing ammonia water
A method for producing a zinc oxide-based compound patterned film according to (1)
It
【０００６】パターン化自己組織膜は、基板上に自己組
織膜の表面官能基をパターン化させたもので、水溶液中
で生成する物質の析出速度は、自己組織膜の表面官能基
によって異なる。そのため、析出速度が速くなる表面官
能基と遅くなる表面官能基を組み合わせることで、選択
析出が可能となる。また、フッ化アンモニウムは水溶液
中で、亜鉛イオンと錯形成するフッ化物イオンとアンモ
ニア分子を提供し、生成するフッ化水酸化物の過飽和度
を制御するのに有効に働く。The patterned self-assembled film is obtained by patterning the surface functional group of the self-assembled film on the substrate, and the deposition rate of the substance produced in the aqueous solution varies depending on the surface functional group of the self-assembled film. Therefore, selective precipitation can be performed by combining a surface functional group having a high deposition rate and a surface functional group having a slow deposition rate. Further, ammonium fluoride provides fluoride ions and ammonia molecules that complex with zinc ions in an aqueous solution, and effectively acts to control the supersaturation degree of the generated fluorinated hydroxide.
【０００７】本発明は、反応水溶液中のフッ化アンモニ
ウムの濃度が亜鉛の濃度に対して２〜１００倍とするこ
とを特徴とするが、この範囲において、基板の表面官能
基による析出速度の差を実現するための過飽和度条件に
することができ、酸化亜鉛基化合物の選択製膜が可能と
なる。The present invention is characterized in that the concentration of ammonium fluoride in the reaction aqueous solution is 2 to 100 times the concentration of zinc. Within this range, the difference in the deposition rate due to the surface functional groups on the substrate is different. The supersaturation condition for realizing the above condition can be satisfied, and the selective film formation of the zinc oxide group compound becomes possible.
【０００８】[0008]
【発明の実施の形態】パターン化自己組織膜の合成は、
まず、自己組織膜の作製から行うが、膜物質を有機溶媒
に溶かして、この溶液に基板を浸す、または膜物質を蒸
着させる方法で行う。自己組織膜用の膜物質としては、
塩素基、臭素基などのハロゲン基もしくは、メトキシ
基、エトキシ基などのアルコキシ基が１から３基、及び
有機官能基が１から３基ついた有機シラン類が使用され
る。有機官能基としては、フェニル基、アルキル基、ア
ミノ基などの終端のものが使用される。基板には、酸化
物、もしくは表面に酸化膜のついた金属、半導体が使用
される。BEST MODE FOR CARRYING OUT THE INVENTION
First, a self-assembled film is prepared, but a method of dissolving the film substance in an organic solvent and immersing the substrate in this solution, or vapor depositing the film substance. Membrane materials for self-assembled membranes include
Organosilanes having 1 to 3 halogen groups such as chlorine group and bromine group, or alkoxy groups such as methoxy group and ethoxy group, and 1 to 3 organic functional groups are used. As the organic functional group, a terminal group such as a phenyl group, an alkyl group or an amino group is used. An oxide, a metal having an oxide film on its surface, or a semiconductor is used for the substrate.
【０００９】自己組織膜のパターン化には、基板上に自
己組織膜を全面に作製した後で、フォトマスクを介して
紫外線照射する、紫外線レーザ、電子線またはイオン線
で描画する、マイクロチップで引っ掻くことによる描画
によって自己組織膜の表面官能基を部分的に変化させ
る、などの方法が用いられる。また、マイクロスタンプ
を用いて、基板上に部分的に自己組織膜を作製する方法
も使用される。また、これらの処理によってパターン化
した後で、その上に、さらに自己組織膜を作製して表面
官能基を変化させる方法も使用される。このようにし
て、２種類以上の自己組織膜をパターン化した基板がテ
ンプレートに使用される。The patterning of the self-assembled film is performed by forming a self-assembled film on the entire surface of the substrate and then irradiating it with ultraviolet light through a photomask, drawing with an ultraviolet laser, an electron beam or an ion beam, or using a microchip A method such as partially changing the surface functional groups of the self-organizing film by drawing by scratching is used. Further, a method of partially forming a self-assembled film on a substrate using a micro stamp is also used. In addition, a method is also used in which after patterning by these treatments, a self-organized film is further formed on it to change surface functional groups. In this way, a substrate having two or more types of self-organized film patterned is used as a template.
【００１０】ここでの酸化亜鉛基化合物とは、酸化亜
鉛、添加物を含む酸化亜鉛、または他酸化物との複合酸
化物のことをさす。この酸化亜鉛基化合物の製膜方法と
しては、これまでに様々な方法が提案されており、スパ
ッター法、化学蒸着（ＣＶＤ）法、スプレー法、電気化
学的析出法などがある。The zinc oxide-based compound here means zinc oxide, zinc oxide containing an additive, or a composite oxide with another oxide. Various methods have been proposed so far for forming a film of the zinc oxide-based compound, such as a sputtering method, a chemical vapor deposition (CVD) method, a spray method, and an electrochemical deposition method.
【００１１】本発明者らは、これらの方法によってパタ
ーン化自己組織膜を形成した基板上に製膜し、酸化亜鉛
基化合物のパターン製膜の条件について検討した結果、
フッ化アンモニウム含む亜鉛水溶液に基板を浸漬して、
フッ化水酸化物を不均一核生成によって基板上に析出さ
せ、それを熱分解する方法が適していること、また、反
応水溶液中のフッ化アンモニウムの濃度は、亜鉛の濃度
に対して２〜１００倍である必要があることを見い出し
た。これ以外の方法では、自己組織膜のパターンに関係
なく、全面的に析出してしまい、酸化亜鉛基化合物のパ
ターン製膜はできなかった。The present inventors conducted film formation on a substrate on which a patterned self-assembled film was formed by these methods, and examined the conditions for pattern formation of a zinc oxide group compound.
Immersing the substrate in a zinc aqueous solution containing ammonium fluoride,
A method of depositing fluorinated hydroxide on the substrate by heterogeneous nucleation and thermally decomposing it is suitable, and the concentration of ammonium fluoride in the reaction aqueous solution is 2 to the concentration of zinc. I found that it needs to be 100 times. With other methods, regardless of the pattern of the self-assembled film, the self-assembled film was entirely deposited and the pattern film formation of the zinc oxide group compound could not be performed.
【００１２】フッ化アンモニウムを含まない亜鉛の酸性
水溶液を中和すると、水酸化物が生成するが、その過飽
和度が高すぎるため、沈殿物となったり、基板上の析出
速度への自己組織膜による影響差が小さいため、析出量
に差がなくなり、選択析出ができない。ここで、フッ化
アンモニウムを用いると、これは水溶液中でフッ化物イ
オンやアンモニア分子となり、亜鉛イオンと錯形成する
ので、析出物の過飽和度を低下させることができる。フ
ッ化アンモニウムを水溶液に溶かすかわりに、フッ酸と
アンモニア水の混合物を用いても、その効果は同等であ
る。When an acidic aqueous solution of zinc containing no ammonium fluoride is neutralized, a hydroxide is formed, but its supersaturation degree is too high, so that it becomes a precipitate or a self-assembled film for the deposition rate on the substrate. Since the difference in influence due to is small, there is no difference in the amount of precipitation, and selective precipitation cannot be performed. Here, when ammonium fluoride is used, it becomes a fluoride ion or an ammonia molecule in an aqueous solution and forms a complex with zinc ion, so that the supersaturation degree of the precipitate can be reduced. Even if a mixture of hydrofluoric acid and ammonia water is used instead of dissolving ammonium fluoride in the aqueous solution, the effect is the same.
【００１３】生成するフッ化水酸化物の析出速度は、錯
形成による過飽和度の低減によって制御されるので、反
応水溶液中のフッ化アンモニウムの濃度は、亜鉛の濃度
に対して２〜１００倍とする。フッ化アンモニウムの濃
度が亜鉛の濃度に対して２倍よりも低い場合には、錯化
剤としての効果が低すぎるため、析出が速すぎて表面官
能基による析出速度差が現れないので、析出の選択性
（自己組織膜による析出量の差）が低くなる、溶液中で
沈殿物が生成するため基板上に析出できない、などの問
題が生じるので好ましくない。また、フッ化アンモニウ
ムの濃度が亜鉛の濃度に対して１００倍よりも高い場合
には、錯形成が強すぎて、析出に時間がかかりすぎて実
用的でなかったり、析出物が溶解してしまうなどの問題
が生じるので適しない。The deposition rate of the fluorinated hydroxide formed is controlled by reducing the degree of supersaturation due to complex formation, so the concentration of ammonium fluoride in the reaction solution is 2 to 100 times the concentration of zinc. To do. When the concentration of ammonium fluoride is lower than twice the concentration of zinc, the effect as a complexing agent is too low, and the deposition is too fast to cause a difference in the deposition rate due to surface functional groups. However, the selectivity (difference in the amount of precipitation due to the self-assembled film) becomes low, and precipitates are generated in the solution so that they cannot be precipitated on the substrate. Further, when the concentration of ammonium fluoride is higher than 100 times the concentration of zinc, complex formation is too strong and precipitation takes too long, which is not practical or the precipitate dissolves. It is not suitable as it causes problems such as.
【００１４】亜鉛水溶液としては、塩化亜鉛、硝酸亜
鉛、酢酸亜鉛、硫酸亜鉛、フッ化亜鉛などの可溶性亜鉛
塩類の、１種または２種以上の水溶液が使用される。ま
た、この水溶液には亜鉛と共沈できる金属イオンが含ま
れていても良い。亜鉛化合物はｐＨが６から１０の範囲
で析出するが、このｐＨ範囲で共沈できる金属には、Ａ
ｌ、Ｆｅ、Ｃｒ、Ｔｉ、Ｚｒ、Ｃｕ、Ｓｎ、ｌｎ、Ｍｎ
などがあげられるが、亜鉛フッ化水酸化物の生成に誘導
されて、少量ならば共沈できるようになる元素もあるの
で、この限りではない。As the zinc aqueous solution, one or more aqueous solutions of soluble zinc salts such as zinc chloride, zinc nitrate, zinc acetate, zinc sulfate and zinc fluoride are used. Further, this aqueous solution may contain metal ions that can be coprecipitated with zinc. The zinc compound precipitates in the pH range of 6 to 10. The metals that can be coprecipitated in this pH range include A
1, Fe, Cr, Ti, Zr, Cu, Sn, In, Mn
However, it is not limited to this because some elements are induced by the formation of zinc fluorinated hydroxide and can coprecipitate in a small amount.
【００１５】反応水溶液中の亜鉛の濃度は０．０００１
モル／リットルから１０モル／リットルが好ましい。そ
れ以下では析出速度が遅く、製膜に時間がかかりすぎて
実用的ではない。また、それ以上では析出速度が速すぎ
るため、析出の選択性が低くなる。また、反応水溶液の
ｐＨは６から１０に調整する。それ以外では、析出物が
溶解してしまい、製膜が行えない。The concentration of zinc in the reaction solution is 0.0001.
It is preferably from 10 mol / l to 10 mol / l. If it is less than that, the deposition rate is slow and it takes too much time to form a film, which is not practical. On the other hand, if it is higher than this, the precipitation rate becomes too fast, and the selectivity of precipitation becomes low. The pH of the reaction aqueous solution is adjusted to 6 to 10. Otherwise, the precipitate will be dissolved and film formation cannot be performed.
【００１６】反応時間は、製膜条件と目的の膜厚によっ
て異なるが、１０秒から２日間が好ましい。それ以下で
は析出物が得られないし、それ以上では、析出の選択性
が低くなる。反応温度は５℃以上、８０℃以下とする。
それ以下では析出速度が遅く時間がかかる。また、それ
以上では析出速度が速いため、析出の選択性が低くな
る。The reaction time varies depending on the film forming conditions and the desired film thickness, but is preferably 10 seconds to 2 days. If it is less than that, no precipitate is obtained, and if it is more than that, the selectivity of precipitation is low. The reaction temperature is 5 ° C or higher and 80 ° C or lower.
Below that, the deposition rate is slow and it takes time. On the other hand, if it is higher than this, the precipitation rate is high, and the selectivity of precipitation is low.
【００１７】本発明における析出過程で析出するフッ化
水酸化物は、酸化亜鉛基化合物の前駆体である。そのた
め、酸化亜鉛基化合物にするために、１５０℃以上で加
熱して、熱分解させる。１５０℃以上で加熱しないと、
酸化が不十分で目的の物性が得られない。The fluorinated hydroxide deposited in the deposition process of the present invention is a precursor of a zinc oxide group compound. Therefore, in order to obtain a zinc oxide group compound, it is heated at 150 ° C. or higher to be thermally decomposed. If you do not heat above 150 ℃,
Oxidation is insufficient and the desired physical properties cannot be obtained.
【００１８】[0018]
【実施例】実施例１
自然酸化膜のついたシリコン基板上にフェニルトリクロ
ロシラン自己組織膜を形成して表面をフェニル基にした
後、これにフォトマスクを介して水銀ランプの紫外光を
２時間照射して、部分的に水酸基に変え、パターン化自
己組織膜を形成した。次に、０．０５モル／リットルの
塩化亜鉛、０．９モル／リットルのフッ化アンモニウム
水溶液を、水酸化ナトリウム水溶液でＰＨ調整した水溶
液に基板を浸して、フッ化水酸化亜鉛を析出させた。反
応は室温で行った。フッ化水酸化亜鉛の析出速度は、水
酸基部分で速く水溶液のｐＨが７．７の場合、時間５分
で選択析出を観察した。これを３００℃で加熱すると、
フッ化水酸化亜鉛は熱分解され、パターン化酸化亜鉛膜
が得られた。Example 1 A phenyltrichlorosilane self-assembled film was formed on a silicon substrate having a natural oxide film to make the surface a phenyl group, and then ultraviolet light of a mercury lamp was applied for 2 hours through a photomask. Irradiation caused partial conversion to hydroxyl groups to form a patterned self-assembled monolayer. Next, 0.05 mol / liter of zinc chloride and 0.9 mol / liter of ammonium fluoride aqueous solution were immersed in an aqueous solution whose pH was adjusted with a sodium hydroxide aqueous solution to precipitate zinc fluorinated hydroxide. . The reaction was performed at room temperature. The precipitation rate of zinc fluoride hydroxide was high in the hydroxyl group part, and when the pH of the aqueous solution was 7.7, selective precipitation was observed in 5 minutes. If you heat this at 300 ℃,
Zinc fluoride hydroxide was pyrolyzed to obtain a patterned zinc oxide film.
【００１９】実施例２
実施例１において、基板にガラス、自己組織膜物質にオ
クタデシルトリメトキシシラン、亜鉛水溶液に硝酸亜鉛
水溶液を用い、水溶液のｐＨを７．５として試みた。そ
の結果、時間２分で選択析出を観察した。Example 2 In Example 1, glass was used as the substrate, octadecyltrimethoxysilane was used as the self-assembling film substance, an aqueous zinc nitrate solution was used as the zinc aqueous solution, and the pH of the aqueous solution was adjusted to 7.5. As a result, selective precipitation was observed in 2 minutes.
【００２０】比較例１
実施例１で用いたパターン化自己組織膜基板を用いて、
スパッター法によって酸化亜鉛の製膜を行った。しか
し、その析出速度は、水酸基部分とフェニル基部分で違
いが少なく、全面的に析出してしまい、パターン膜は得
られなかった。Comparative Example 1 Using the patterned self-assembled film substrate used in Example 1,
A zinc oxide film was formed by the sputter method. However, there was little difference in the deposition rate between the hydroxyl group portion and the phenyl group portion, and the entire surface was deposited, and a pattern film could not be obtained.
【００２１】比較例２
実施例１において、フッ化アンモニウムの濃度を０．０
５モル／リットルとした。この場合、フッ化水酸化亜鉛
の析出速度が速すぎるため、水溶液中での沈殿物が生成
し、フッ化水酸化亜鉛の膜は析出しなかった。Comparative Example 2 In Example 1, the concentration of ammonium fluoride was adjusted to 0.0.
It was set to 5 mol / liter. In this case, since the deposition rate of zinc fluoride hydroxide was too fast, a precipitate was formed in the aqueous solution, and a zinc fluoride fluoride film was not deposited.
【００２２】比較例３
実施例１において、塩化亜鉛の濃度を０．０１モル／リ
ットル、フッ化アンモニウムの濃度を１．５モル／リッ
トルとした。この場合、フッ化アンモニウムの錯形成が
強すぎて、フッ化水酸化亜鉛の膜は析出しなかった。Comparative Example 3 In Example 1, the concentration of zinc chloride was 0.01 mol / liter and the concentration of ammonium fluoride was 1.5 mol / liter. In this case, the complex formation of ammonium fluoride was too strong, and the zinc fluoride hydroxide film was not deposited.
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.7 識別記号 ＦＩ Ｈ０１Ｌ 21/88 Ｍ (56)参考文献 特開2000−191323（ＪＰ，Ａ) 特開2000−272921（ＪＰ，Ａ) 特開 昭61−186478（ＪＰ，Ａ) 特開2000−328251（ＪＰ，Ａ) 特開 平10−20488（ＪＰ，Ａ) 中西毅、徐元善、川本邦仁，自己組織 膜を利用した酸化スズ膜のパターン化, 第12回秋期シンポジウム講演予稿集，日 本，日本セラミックス協会，1999年10月 ６日，227 (58)調査した分野(Int.Cl.7，ＤＢ名) C23C 18/00 - 20/08 C01G 9/02 H01B 13/00 H01L 21/288 H01L 21/3205 H01L 21/88 ─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. 7 identification code FI H01L 21/88 M (56) Reference JP 2000-191323 (JP, A) JP 2000-272921 (JP, A) JP 61-186478 (JP, A) JP 2000-328251 (JP, A) JP 10-20488 (JP, A) Takeshi Nakanishi, Yoshiyoshi Xu, Kunihito Kawamoto, Patterning of tin oxide film using self-assembled film , Proceedings of the 12th Autumn Symposium, Japan, The Ceramic Society of Japan, October 6, 1999, 227 (58) Fields investigated (Int.Cl. 7 , DB name) C23C 18/00-20/08 C01G 9/02 H01B 13/00 H01L 21/288 H01L 21/3205 H01L 21/88
Claims (2)
をテンプレートに用い、フッ化アンモニウム及び可溶性
亜鉛塩類の１種または２種以上を含む水溶液であり、か
つフッ化アンモニウムの濃度が亜鉛の濃度に対して２〜
１００倍であり、亜鉛の濃度が０．０００１モル／リッ
トルから１０モル／リットルである水溶液に基板を浸漬
する過程によって、フッ化水酸化物を基板上に選択析出
させ、それを熱分解して酸化物とする方法で製膜するこ
とを特徴とする酸化亜鉛基化合物パターン化膜の製造方
法。1. A patterned self-assembled monolayer formed on a substrate is used as a template, and ammonium fluoride and soluble
An aqueous solution containing one or more zinc salts ,
The concentration of ammonium tetrafluoride is 2 to the concentration of zinc.
100 times, and the concentration of zinc is 0.0001 mol / liter
The method is characterized in that a fluorinated hydroxide is selectively deposited on a substrate by a process of immersing the substrate in an aqueous solution of 10 mol / liter from torr , and pyrolyzed to form an oxide. A method for producing a zinc oxide-based compound patterned film.
フッ化アンモニウムの濃度に相当するフッ酸とアンモニ
ア水を含む水溶液であることを特徴とする請求項１記載
の酸化亜鉛基化合物パターン化膜の製造方法。2. An aqueous solution instead of ammonium fluoride
Hydrofluoric acid and ammonia corresponding to the concentration of ammonium fluoride
A method for producing a zinc oxide-based compound patterned film according to claim 1, which is an aqueous solution containing water .
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