JP3359099B2 - Thin film inductor and thin film transformer - Google Patents
Thin film inductor and thin film transformerInfo
- Publication number
- JP3359099B2 JP3359099B2 JP17954693A JP17954693A JP3359099B2 JP 3359099 B2 JP3359099 B2 JP 3359099B2 JP 17954693 A JP17954693 A JP 17954693A JP 17954693 A JP17954693 A JP 17954693A JP 3359099 B2 JP3359099 B2 JP 3359099B2
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- Prior art keywords
- thin film
- coil
- film
- magnetic film
- planar coil
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- Coils Or Transformers For Communication (AREA)
Description
【０００１】[0001]
【産業上の利用分野】本発明は、コンバータやスイッチ
ング電源等に好適な、高周波特性に優れる薄膜インダク
タおよび薄膜トランスに関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thin-film inductor and a thin-film transformer suitable for a converter, a switching power supply and the like and having excellent high-frequency characteristics.
【０００２】[0002]
【従来の技術】近年、電子機器構成部品の小形化・軽量
化の要請が厳しく、高品質な電力が得られるスイッチン
グ電源等においても小形化は必須の課題であり、スイッ
チング周波数の高周波化により、トランス、コンデンサ
等の部品を小さくすることで小形化が進められてきた。
半導体部品やコンデンサ部品では、ＬＳＩや積層セラミ
ックスコンデンサに代表されるように、早くから薄膜技
術が用いられ、構成部品小形化の要請に十分応えてき
た。一方、トランス・インダクタ等の磁性部品はこれま
でに最も小形化しにくく、また高周波化に伴う損失増加
を抑えることも難しいため、電源の小形化を妨げる第一
の原因であった。このため、現在、高周波スイッチング
電源の体積は、磁性部品の体積によって決定されると言
っても過言ではない。そこで近年、高周波化に対応すべ
く薄膜形成技術を用いた薄膜トランスおよび薄膜インダ
クタの研究が進められ、スイッチング周波数をＭＨｚ帯
域まで高めた小形電源の開発が検討されるようになっ
た。2. Description of the Related Art In recent years, there has been a strict demand for downsizing and weight reduction of electronic device components, and downsizing is an indispensable subject even in switching power supplies that can obtain high-quality power. Miniaturization has been promoted by reducing components such as transformers and capacitors.
In semiconductor components and capacitor components, thin-film technology has been used from an early stage, as typified by LSIs and multilayer ceramic capacitors, and has sufficiently responded to the demand for downsizing components. On the other hand, magnetic components such as transformers and inductors have been most difficult to miniaturize so far, and it is also difficult to suppress an increase in loss due to an increase in frequency. For this reason, it is no exaggeration to say that the volume of the high-frequency switching power supply is currently determined by the volume of the magnetic component. Therefore, in recent years, research on a thin film transformer and a thin film inductor using a thin film forming technique has been promoted in order to cope with an increase in frequency, and the development of a small power source having a switching frequency raised to a MHz band has been studied.
【０００３】図１３は、従来技術（例えば、山口他、
「スパイラル形薄膜トランスの作製と特性」、電気学会
・マグネティックス研究会資料、ＭＡＧ−９１−６２、
１９９１）により薄膜形成技術で作製された薄膜インダ
クタの構造図であり、（ａ）は上面図、（ｂ）は（ａ）
の線分ＯＰにおける断面図を示す。図中、１は基板、２
は絶縁層、３は下部磁性膜、４は上部磁性膜、５は平面
コイルを示している。また、上面図（ａ）では上部磁性
膜４の一部を除去してその内部の平面コイル５示してい
る。その平面コイル５はスパイラル状に形成されてお
り、所定ターン数のインダクタ用のコイル部が形成され
ている。平面コイル５はドーナツ状の絶縁層２の中に埋
め込まれており、その絶縁層２の外側が基板１上に一面
状に形成された下部磁性膜３と上部磁性膜４とで覆われ
ている。ここで、下部磁性膜３および上部磁性膜４およ
び平面コイル５はスパッタ法等の薄膜形状技術で成膜さ
れており、絶縁層２はスパッタ法によるＳｉＯ2等ある
いはフォトレジスト等の塗布で形成されている。FIG. 13 shows a conventional technology (for example, Yamaguchi et al.,
"Production and characteristics of spiral type thin film transformer", Materials of IEICE, Magnetics Study Group, MAG-91-62,
1991) is a structural view of a thin film inductor manufactured by a thin film forming technique, (a) is a top view, and (b) is (a).
A cross-sectional view along line OP of FIG. In the figure, 1 is a substrate, 2
Indicates an insulating layer, 3 indicates a lower magnetic film, 4 indicates an upper magnetic film, and 5 indicates a planar coil. In addition, in the top view (a), a part of the upper magnetic film 4 is removed to show a planar coil 5 inside thereof. The planar coil 5 is formed in a spiral shape, and a coil portion for an inductor having a predetermined number of turns is formed. The planar coil 5 is embedded in a doughnut-shaped insulating layer 2, and the outside of the insulating layer 2 is covered with a lower magnetic film 3 and an upper magnetic film 4 formed on the substrate 1 in a plane. . Here, the lower magnetic film 3, the upper magnetic film 4, and the planar coil 5 are formed by a thin film forming technique such as a sputtering method, and the insulating layer 2 is formed by coating of SiO 2 or a photoresist by a sputtering method. ing.
【０００４】上記構成において、平面コイル５は、従
来、同一の線幅でスパイラス状に形成されていた。[0004] In the above configuration, the planar coil 5 is conventionally formed in a spiral shape with the same line width.
【０００５】[0005]
【発明が解決しようとする課題】しかしながら、図１３
に示した上記従来技術による薄膜インダクタ（薄膜トラ
ンスの場合でも同様）では、平面コイル５の線幅が同一
であるため、スパイラル状の平面コイル５の外側のコイ
ル抵抗が内側のコイル抵抗より大きくなり、従って外側
での銅損が大きくなる。そのため、平面コイル５の発熱
が不均一となったり、平面コイル５全体の銅損が最小で
はないという問題点があった。However, FIG.
In the thin film inductor according to the prior art described above (the same applies to the case of a thin film transformer), since the line width of the planar coil 5 is the same, the outer coil resistance of the spiral planar coil 5 becomes larger than the inner coil resistance. Therefore, the copper loss on the outside increases. For this reason, there has been a problem that the heat generation of the planar coil 5 becomes non-uniform and the copper loss of the entire planar coil 5 is not minimum.
【０００６】本発明は、上記問題点を解決するためにな
されたものであり、その目的は、限られた空間的制約の
下で平面コイルの銅損を最小とする薄膜インダクタおよ
び薄膜トランスを提供することである。SUMMARY OF THE INVENTION The present invention has been made to solve the above problems, and an object of the present invention is to provide a thin film inductor and a thin film transformer which minimize copper loss of a planar coil under limited space restrictions. It is to be.
【０００７】[0007]
【課題を解決するための手段】上記目的を達成するた
め、本発明の薄膜インダクタおよび薄膜トランスでは、
ドーナツ状の絶縁体の中にスパイラル状の導電性薄膜か
らなる１ないし複数の巻線が埋め込まれ前記絶縁体の外
側が磁性薄膜で覆われている構成において、前記巻線の
各部分の銅損が同一もしくは概ね同一となるように前記
巻線の幅が中心から遠ざかるに従い増大されているとと
もに、前記磁性薄膜の中心に近い部分の膜厚が周辺部の
膜厚よりも厚いことを特徴とする。In order to achieve the above object, a thin film inductor and a thin film transformer according to the present invention provide:
In a configuration in which one or more windings made of a spiral conductive thin film are embedded in a donut-shaped insulator and the outside of the insulator is covered with a magnetic thin film, the copper loss of each part of the windings is reduced. And that the width of the winding is increased as it goes away from the center so that
In addition, the thickness of the portion near the center of the magnetic thin film is
It is characterized by being thicker than the film thickness .
【０００８】上記の構成においては、磁性薄膜の中心に
近い部分の膜厚が周辺部の膜厚よりも厚くすることが、
小形化の点で好適である。In the above configuration, the thickness of the portion near the center of the magnetic thin film may be larger than the thickness of the peripheral portion.
It is suitable in terms of miniaturization.
【０００９】[0009]
【作用】本発明の薄膜トランスおよび薄膜インダクタで
は、スパイラル状の巻線の線幅を中心から離れるに従い
増大させることで、巻線の各部分の銅損が同じ値になる
ようにし、限られた空間的制約下で巻線各部分の発熱を
いたる所で均一にし、かつ巻線全体の銅損を最小にして
低損失化を図っている。In the thin film transformer and the thin film inductor of the present invention, the line width of the spiral winding is increased as the distance from the center is increased, so that the copper loss of each portion of the winding becomes the same value, and the winding is limited. Under the spatial constraints, the heat of each part of the winding is made uniform everywhere, and the copper loss of the whole winding is minimized to reduce the loss.
【００１０】また、中心に近い磁性薄膜の厚みを増した
構造により、磁性薄膜の磁束の集中を緩和してインダク
タンスを増加させ、そのインダクタンスが増加する分、
小形化を可能にしている。In addition, the structure in which the thickness of the magnetic thin film near the center is increased reduces the concentration of magnetic flux in the magnetic thin film, thereby increasing the inductance.
It enables miniaturization.
【００１１】[0011]
【実施例】本発明の実施例を、図面を参照して詳細に説
明する。なお、以下では、本発明の平面コイル部の実施
例と、この実施例による具体的な第１〜第９の作製例を
示すが、第１〜第６の作製例は本発明のスパイラル状の
導電性薄膜からなる巻線の作製例を示し、第７、第８の
作製例は本発明の磁性薄膜の作製例を示し、第９の作製
例は磁性薄膜自体の作製例を示すものである。 DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiments of the present invention will be described in detail with reference to the drawings. In the following, the implementation of the planar coil portion of the present invention will be described.
Examples and specific first to ninth production examples according to this embodiment
As shown, the first to sixth production examples are spiral-shaped according to the present invention.
Examples of manufacturing a winding made of a conductive thin film will be described.
The ninth fabrication example shows a fabrication example of the magnetic thin film of the present invention.
The example shows a production example of the magnetic thin film itself.
【００１２】図１は本発明の平面コイル部の一実施例を
示す構成図であり、（ａ）は一部を除去して内部を示し
た上面図、（ｂ）は（ａ）における中心から周辺への線
分ＯＰにおける断面図を示す。図中、１は基板、２は絶
縁層、３は下部磁性膜、４は上部磁性膜、５は中心から
離れるほど線幅を増大させた薄膜構造の平面コイル、Ｗ
1は最も内側の平面コイルの幅、Ｗ2，Ｗ3…Ｗnは順にそ
の外側の平面コイル５の幅、Ｗsは平面コイル部全体の
幅、Ｄは各コイル間の絶縁距離、Ｒは最も内側のコイル
５の内半径である。FIGS. 1A and 1B are structural views showing one embodiment of the planar coil portion of the present invention, in which FIG. 1A is a top view showing the interior with a part removed, and FIG. FIG. 4 shows a cross-sectional view along a line OP to the periphery. In the figure, 1 is a substrate, 2 is an insulating layer, 3 is a lower magnetic film, 4 is an upper magnetic film, 5 is a planar coil having a thin film structure whose line width is increased from the center, W
1 of the innermost planar coil width, W 2, W 3 ... W n in turn the width of the planar coil 5 of the outer, W s is the planar coil portion overall width, D is the insulation distance between the coils, R represents This is the inner radius of the innermost coil 5.
【００１３】平面コイル５はスパイラル状に形成されて
おり、所定ターン数のトランス用またはインダクタ用の
コイル部が形成されている。平面コイル５はドーナツ状
の絶縁層２の中に埋め込まれており、その絶縁層２の外
側が基板１上に形成された下部磁性膜３と上部磁性膜４
とで覆われている。本実施例では、限られた空間的制約
の下で銅損を最小にするために、スパイラル状の各コイ
ル５の幅Ｗ1，Ｗ2，Ｗ3，…Ｗnを、以下の計算式に概ね
従って中心から離れるほど増大させる。The planar coil 5 is formed in a spiral shape, and has a coil portion for a predetermined number of turns for a transformer or an inductor. The planar coil 5 is embedded in a donut-shaped insulating layer 2, and the outside of the insulating layer 2 is formed on a substrate 1 by a lower magnetic film 3 and an upper magnetic film 4.
And covered with. In this embodiment, in order to make the copper loss to a minimum under the limited space constraints, the width W 1 of each coil 5 spiral, W 2, W 3, a ... W n, the following formula Generally, therefore, the distance increases from the center.
【００１４】計算式は、図２に示した本発明の平面コイ
ル部の別の構成例である同心円状コイルを例として、近
似して説明する。図中、５は同心円状の平面コイルであ
り、各コイル５は平面コイル切断部５ａを有し、その切
断部５ａの端部で平面コイル接続部５ｂにより隣接する
他のコイル５に接続され、全体としてスパイラル状に形
成されている。以下では、平面コイル切断部５ａおよび
平面コイル接続部５ｂの影響は無視する。最も外側のコ
イル５の外周上の一点とこの点から中心に向けて下ろし
た垂線が最も内側のコイル５の内周と交わる点との距離
をＷsとし、この垂線と交わる各コイル５の外周上の点
と内周上の点との距離を同心円の内側から順にＷ1から
Ｗn（ｎはコイルのターン数を示す２以上で任意の整
数）とし、各コイル５の幅の中心の一点と円の中心との
距離（半径）を同心円の内側から順にＲ1からＲnとし、
最も内側のコイル５の内周上の一点と円の中心との距離
をＲとし、さらに各コイル間の絶縁のために設けたコイ
ル間絶縁距離をＤとした場合に、以下の（１）から
（３）式を満足するようにＷ1からＷnまでを求める。こ
れらの計算式は、各コイル５の銅損が同一になるように
導かれたものである。The calculation formula will be approximated by taking a concentric coil as another example of the planar coil portion of the present invention shown in FIG. 2 as an example. In the figure, 5 is a concentric plane coil, each coil 5 has a plane coil cutting portion 5a, and an end of the cutting portion 5a is connected to another adjacent coil 5 by a plane coil connection portion 5b, It is formed in a spiral shape as a whole. In the following, the effects of the plane coil cutting section 5a and the plane coil connection section 5b are ignored. The distance between a point on the outer periphery of the outermost coil 5 and a point where a perpendicular drawn down from this point toward the center intersects the inner periphery of the innermost coil 5 is represented by W s, and the outer periphery of each coil 5 intersecting this perpendicular a distance between a point on the inner peripheral point above and (the n arbitrary integer of 2 or more which indicates the number of turns of the coil) W n from W 1 in order from the inner side of the concentric circle and one point in the center of the width of each coil 5 from R 1 and R n are sequentially distance (radius) between the center of the circle from the inside of the concentric circles,
When the distance between one point on the inner circumference of the innermost coil 5 and the center of the circle is R, and the insulation distance between the coils provided for insulation between the coils is D, the following (1) (3) Request from W 1 so as to satisfy the formula to W n. These formulas are derived so that the copper loss of each coil 5 is the same.
【００１５】 Ｒ1／Ｗ1＝Ｒ2／Ｗ2＝…＝Ｒn／Ｗn …（１） Ｒn＝Ｒ＋Ｗ1＋…＋Ｗn-1＋（ｎ−１）Ｄ＋Ｗn／２ …（２） Ｗn＝Ｗs−Ｗ1−…−Ｗn-1−（ｎ−１）Ｄ …（３） 上記の計算式では、平面コイル部の巻数が３ターンまで
は代数的に解いて求めることができるが、４ターン以上
では代数的に求めることができない。そこで巻数が４タ
ーン以上の場合には数値計算を使用する。[0015] R 1 / W 1 = R 2 / W 2 = ... = R n / W n ... (1) R n = R + W 1 + ... + W n-1 + (n-1) D + W n / 2 ... (2 ) W n = W s −W 1 −... −W n−1 − (n−1) D (3) In the above formula, the number of turns of the plane coil portion is obtained by solving algebraically up to three turns. Can be obtained, but cannot be obtained algebraically for more than 4 turns. Therefore, when the number of turns is four or more, numerical calculation is used.
【００１６】次に、上記実施例による具体的な作製例に
より、本実施例の作用効果を説明する。Next, the operation and effect of this embodiment will be described with reference to a specific example of manufacture according to the above embodiment.
【００１７】図３（ａ），（ｂ）は、本発明の実施例に
よる具体的な第１の作製例を示す薄膜インダクタ用コイ
ル部の上面図（ａ）と薄膜インダクタの断面図（ｂ）で
ある。図中、１は基板、２は絶縁層、３は下部磁性膜、
４は上部磁性膜、５は中心から離れるほど線幅を増大さ
せたスパイラル状の薄膜構造の平面コイル、Ｗ1は最も
内側の平面コイルの幅、Ｗ2，Ｗ3，Ｗ4は順にその外側
の平面コイル５の幅、Ｗsは平面コイル部全体の幅、Ｄ
は各コイル間の絶縁距離、Ｒは最も内側のコイル５の内
半径である。平面コイル５は、同心円状に形成されてい
て平面コイル切断部５ａを有し、その切断部５ａの端部
で平面コイル接続部５ｂにより隣接する他の平面コイル
５に接続され、全体としてスパイラル状に形成されてい
る。3 (a) and 3 (b) are a top view (a) of a coil portion for a thin-film inductor and a cross-sectional view (b) of a thin-film inductor showing a first specific example of manufacture according to an embodiment of the present invention. It is. In the figure, 1 is a substrate, 2 is an insulating layer, 3 is a lower magnetic film,
4 the upper magnetic film, the planar coil of the spiral thin film structure with increased line width with increasing distance from the center 5, W 1 is the innermost planar coil width, W 2, W 3, W 4 in turn outside , W s is the width of the entire planar coil portion, D
Is the insulation distance between the coils, and R is the inner radius of the innermost coil 5. The planar coil 5 is formed concentrically and has a planar coil cut portion 5a. An end of the cut portion 5a is connected to another adjacent planar coil 5 by a planar coil connection portion 5b, and the spiral coil as a whole is formed. Is formed.
【００１８】本作製例において、平面コイル５の巻数は
４ターン、各ターンのコイル間に絶縁のために設ける隔
離距離Ｄは１０μｍ、最も内側の同心円状のコイル５の
内半径Ｒは７０μｍ、平面コイル全体の幅Ｗsは２３０
μｍ、下部磁性膜３および上部磁性膜４の厚さは１０μ
ｍ、平面コイル５の厚さは１０μｍ、下部磁性膜３と平
面コイル５および上部磁性膜４と平面コイル５との隔離
距離はそれぞれ１０μｍとしている。この条件を
（１），（２），（３）式に代入して計算すると、Ｗ1
は２５．５μｍ、Ｗ2は３８．４μｍ、Ｗ3は５６．０μ
ｍ、Ｗ4は８０．１μｍとなる。Ｗ1からＷ4が５０μｍ
と等しく設計された従来例の平面コイルの抵抗と本実施
例の抵抗をＡｎｓｏｆｔ社（米国、Ｐｉｔｔｓｂｕｒｇ
ｈ）の有限要素法による静磁界計算プログラムＭａｇｎ
ｅｔｏｓｔａｔ Ｓｏｌｖｅｒにより計算すると、本発
明の実施例による平面コイル５の抵抗は従来例の８８％
に減少している。また、直流のインダクタンスを、下部
磁性膜３および上部磁性膜４の比透明率を１０００とし
て上記Ｍａｇｎｅｔｏｓｔａｔ Ｓｏｌｖｅｒにより計
算すると、従来例の場合の９９％に減少するに過ぎな
い。ここで平面コイルの性能係数Ｑは平面コイルの抵抗
をＲ、インダクタンスをＬ、角周波数をωとすれば次式
で表される。In this manufacturing example, the number of turns of the planar coil 5 is 4 turns, the separation distance D provided for insulation between the coils of each turn is 10 μm, the inner radius R of the innermost concentric coil 5 is 70 μm, The width W s of the entire coil is 230
μm, and the thickness of the lower magnetic film 3 and the upper magnetic film 4 is 10 μm.
m, the thickness of the plane coil 5 is 10 μm, and the separation distance between the lower magnetic film 3 and the plane coil 5 and between the upper magnetic film 4 and the plane coil 5 is 10 μm. By substituting this condition into equations (1), (2) and (3) and calculating, W 1
Is 25.5 μm, W 2 is 38.4 μm, and W 3 is 56.0 μm.
m and W 4 are 80.1 μm. 50 μm from W 1 to W 4
The resistance of the conventional planar coil and the resistance of the present embodiment, which are designed to be equal to
h) Magnet static field calculation program by finite element method Magn
The resistance of the planar coil 5 according to the embodiment of the present invention is 88% of that of the conventional example, calculated by Etostat Solver.
Has decreased. Further, when the direct current inductance is calculated by the above-mentioned Magnetostat Solver with the relative transparency of the lower magnetic film 3 and the upper magnetic film 4 being 1000, it is only reduced to 99% of the conventional example. Here, the performance coefficient Q of the plane coil is expressed by the following equation, where R is the resistance of the plane coil, L is the inductance, and ω is the angular frequency.
【００１９】Ｑ＝ωＬ／Ｒ …（４） 従って、抵抗Ｒは８８％に減少、インダクタンスＬは９
９％に減少したのであるから（４）式から、本作製例の
薄膜インダクタではＱが１３％向上することが分かる。Q = ωL / R (4) Therefore, the resistance R is reduced to 88%, and the inductance L is 9
Since it has been reduced to 9%, it can be seen from equation (4) that the thin-film inductor of this fabrication example improves Q by 13%.
【００２０】図４は、本発明の実施例による具体的な第
２の作製例を示す断面図である。図中、１は基板、２は
絶縁層、３は下部磁性膜、４は上部磁性膜、５は中心か
ら離れるほど線幅を増大させたスパイラル状の薄膜構造
の平面コイルである。本作製例は、図３の第１の作製例
において下部磁性膜３をドーナツ状に形成し、その上に
絶縁層２に埋め込んだ平面コイル部を形成し、絶縁層２
の回りを上部磁性膜４で覆った作製例である。本作製例
では、中心部の磁性膜が除去された構造となる。図３の
第１の作製例で上記Ｍａｇｎｅｔｏｓｔａｔ Ｓｏｌｖ
ｅｒにより磁力線図を作図すると、図５に示すように中
心部の磁性膜３，４には磁束１０が浸透せず、これらは
高インダクタンス化には寄与していない。図４の本作製
例の構造は、磁束が浸透せず、高インダクタンス化に寄
与していないこの中心部の磁性膜を除去したものであ
る。これを、上記Ｍａｇｎｅｔｏｓｔａｔ Ｓｏｌｖｅ
ｒによりインダクタンスを計算すると従来例の場合の９
８％に減少するに過ぎず、第１の作製例とほぼ同じ性能
係数が得られる。FIG. 4 is a cross-sectional view showing a second specific example according to the embodiment of the present invention. In the figure, 1 is a substrate, 2 is an insulating layer, 3 is a lower magnetic film, 4 is an upper magnetic film, 5 is a planar coil having a spiral thin-film structure in which the line width increases with distance from the center. In this manufacturing example, the lower magnetic film 3 is formed in the shape of a donut in the first manufacturing example of FIG. 3, and a planar coil portion embedded in the insulating layer 2 is formed thereon.
This is a production example in which the area around is covered with the upper magnetic film 4. In this manufacturing example, the structure is such that the magnetic film at the center is removed. In the first production example of FIG. 3, the above Magnetostat Solv is used.
When a magnetic force line diagram is plotted by er, as shown in FIG. 5, the magnetic flux 10 does not penetrate into the magnetic films 3 and 4 at the center, and these do not contribute to the increase in inductance. The structure of this example of FIG. 4 is obtained by removing the magnetic film at the center portion where the magnetic flux does not penetrate and does not contribute to the increase in inductance. This is referred to as the above-mentioned Magnetostat Solve.
When the inductance is calculated by r, it is 9 in the case of the conventional example.
The coefficient of performance is only reduced to 8%, and almost the same coefficient of performance as in the first production example is obtained.
【００２１】このように、中心部の磁性膜を除去した作
製例では、その中心部を接続用のパッドやスルーホール
の領域などとして自由に利用できる利点が得られる。As described above, in the manufacturing example in which the magnetic film at the center is removed, there is an advantage that the center can be freely used as a connection pad, a through hole region, or the like.
【００２２】図６は、本発明の実施例による具体的な第
３の作製例を示す薄膜インダクタの断面図である。図
中、１は基板、２は絶縁層、３は下部磁性膜、４は上部
磁性膜、５は中心から離れるほど線幅を増大させたスパ
イラル状の薄膜構造の平面コイルである。FIG. 6 is a sectional view of a thin film inductor showing a third specific example of manufacture according to the embodiment of the present invention. In the figure, 1 is a substrate, 2 is an insulating layer, 3 is a lower magnetic film, 4 is an upper magnetic film, 5 is a planar coil having a spiral thin-film structure in which the line width increases with distance from the center.
【００２３】本作製例において、平面コイル部の巻数は
１０ターン、各平面コイル５に絶縁のために設ける隔離
距離Ｄは１０μｍ、最も内側の同心円状のコイル５の内
半径Ｒは７０μｍ、平面コイル部全体の幅Ｗsは５９０
μｍ、下部磁性膜３および上部磁性膜４の厚さは１０μ
ｍ、平面コイル５の厚さは１０μｍ、下部磁性膜３と平
面コイル５との隔離距離および上部磁性膜４と平面コイ
ル５との隔離距離はそれぞれ１０μｍである。この条件
から（１），（２），（３）式によりそれぞれ平面コイ
ル幅を求めると、最も内側のコイル幅Ｗ1は１３．７μ
ｍ、外側へ順にＷ2は１８．３μｍ、Ｗ3は２３．８μ
ｍ、Ｗ4は３０．４μｍ、Ｗ5は３８．３μｍ、Ｗ6は４
７．７μｍ、Ｗ7は５９．０μｍ、Ｗ8は７２．４μｍ、
Ｗ9は８８．６μｍ、最も外側のコイル幅Ｗ10は１０
７．８μｍとなる。Ｗ1からＷ10が５０μｍと等しく設
計された従来例の場合の平面コイルの抵抗と本実施例の
抵抗をＡｎｓｏｆｔ社（米国、Ｐｉｔｔｓｂｕｒｇｈ）
の有限要素法による静磁界計算プログラムＭａｇｎｅｔ
ｏｓｔａｔ Ｓｏｌｖｅｒにより計算すると、本発明の
実施例による平面コイル５の抵抗は従来例の７７％に減
少している。また、直流のインダクタンスを、磁性膜の
比透明率を１０００として上記Ｍａｇｎｅｔｏｓｔａｔ
Ｓｏｌｖｅｒにより計算すると、従来例の場合の９９
％に減少するに過ぎず、従って平面コイルの性能係数Ｑ
は（４）式により１７％向上することが分かる。In this manufacturing example, the number of turns of the planar coil portion is 10 turns, the separation distance D provided for insulation on each planar coil 5 is 10 μm, the inner radius R of the innermost concentric coil 5 is 70 μm, The width W s of the entire part is 590
μm, and the thickness of the lower magnetic film 3 and the upper magnetic film 4 is 10 μm.
m, the thickness of the plane coil 5 is 10 μm, and the separation distance between the lower magnetic film 3 and the plane coil 5 and the separation distance between the upper magnetic film 4 and the plane coil 5 are 10 μm, respectively. When the plane coil widths are respectively obtained from these conditions by the equations (1), (2) and (3), the innermost coil width W 1 is 13.7 μm.
m, and W 2 in the order to the outside 18.3μm, W 3 is 23.8μ
m, W 4 is 30.4 μm, W 5 is 38.3 μm, W 6 is 4
7.7 μm, W 7 is 59.0 μm, W 8 is 72.4 μm,
W 9 is 88.6Myuemu, coil width W 10 outermost 10
It becomes 7.8 μm. W 1 from W 10 is 50μm equally designed conventional resistor and the embodiment of the planar coil in the case of resistance Ansoft Corporation (USA, Pittsburgh)
Magnetic Field Calculation Program Magnet by Finite Element Method
Calculated by ost Solver, the resistance of the planar coil 5 according to the embodiment of the present invention is reduced to 77% of the conventional example. In addition, the DC inductance was set to the above-mentioned Magnetostat by setting the relative transparency of the magnetic film to 1000.
When calculated by Solver, 99
%, And therefore the coefficient of performance Q of the planar coil.
Is improved by 17% according to the equation (4).
【００２４】図７は本発明の実施例による具体的な第４
の作製例を示す断面図である。図中、１は基板、２は絶
縁層、３は下部磁性膜、４は上部磁性膜、５は中心から
離れるほど線幅を増大させたスパイラル状の薄膜構造の
平面コイルである。本作製例では、下部磁性膜３と上部
磁性膜４を絶縁層２で離間した状態とし、開磁路構造と
したものであるが、図３の第１の実施例と同様の効果が
得られることは明らかである。FIG. 7 shows a fourth specific example according to the embodiment of the present invention.
It is sectional drawing which shows the example of manufacture of. In the figure, 1 is a substrate, 2 is an insulating layer, 3 is a lower magnetic film, 4 is an upper magnetic film, 5 is a planar coil having a spiral thin-film structure in which the line width increases with distance from the center. In this manufacturing example, the lower magnetic film 3 and the upper magnetic film 4 are separated from each other by the insulating layer 2 to form an open magnetic circuit structure. However, the same effect as in the first embodiment of FIG. 3 can be obtained. It is clear.
【００２５】図８は、本発明の実施例による具体的な第
５の作製例を示す薄膜トランスの断面図である。図中、
１は基板、２は絶縁層、３は下部磁性膜、４は上部磁性
膜、６は１次平面コイル、７は２次平面コイルである。
１次平面コイル６と２次平面コイルはそれぞれ、巻数が
４ターンであり、中心から離れるほど線幅を増大させた
スパイラル状の薄膜構造をなしている。本作製例は、図
３の第１の作製例における平面コイル５を１次平面コイ
ル６と２次平面コイル７の２つに分けて上下に構成した
構造であり、図３の第１の作製例と同様の効果が得られ
ることは明らかである。FIG. 8 is a cross-sectional view of a thin-film transformer showing a fifth specific example according to the embodiment of the present invention. In the figure,
1 is a substrate, 2 is an insulating layer, 3 is a lower magnetic film, 4 is an upper magnetic film, 6 is a primary planar coil, and 7 is a secondary planar coil.
Each of the primary planar coil 6 and the secondary planar coil has four turns, and has a spiral thin film structure in which the line width increases as the distance from the center increases. This production example has a structure in which the planar coil 5 in the first production example of FIG. 3 is divided into two, that is, a primary planar coil 6 and a secondary planar coil 7, and is configured vertically. It is clear that the same effect as the example can be obtained.
【００２６】図９は、本発明の実施例による具体的な第
６の作製例を示す薄膜トランスの断面図である。図中、
１は基板、２は絶縁層、３は下部磁性膜、４は上部磁性
膜、６は１次平面コイル、７は２次平面コイルである。
１次平面コイル６と２次平面コイルはそれぞれ、巻数が
４ターンであり、中心から離れるほど線幅を増大させた
スパイラル状の薄膜構造をなしている。本作製例も、図
３の第１の実施例における平面コイル５を１次平面コイ
ル６と２次平面コイル７の２つに分けて平面上で互い違
いに構成した構造であり、これもまた図３の第１の作製
例と同様の効果が得られることは明らかである。FIG. 9 is a cross-sectional view of a thin-film transformer showing a sixth specific example according to the embodiment of the present invention. In the figure,
1 is a substrate, 2 is an insulating layer, 3 is a lower magnetic film, 4 is an upper magnetic film, 6 is a primary planar coil, and 7 is a secondary planar coil.
Each of the primary planar coil 6 and the secondary planar coil has four turns, and has a spiral thin film structure in which the line width increases as the distance from the center increases. This manufacturing example also has a structure in which the planar coil 5 in the first embodiment of FIG. 3 is divided into two, that is, a primary planar coil 6 and a secondary planar coil 7, and are alternately formed on a plane. It is clear that the same effect as in the first manufacturing example of No. 3 can be obtained.
【００２７】なお、第５および第６の作製例は、トラン
スの形式によっては、２以上の平面コイルで構成する場
合にも適用できる。The fifth and sixth manufacturing examples can be applied to a case where the transformer is constituted by two or more planar coils, depending on the type of the transformer.
【００２８】図１０は、本発明の実施例による具体的な
第７の作製例を示す薄膜インダクタの断面図である。図
中、１は基板、２は絶縁層、３は下部磁性膜、４は上部
磁性膜、５は中心から離れるほど線幅を増大させたスパ
イラル状の薄膜構造の平面コイル、８は追加上部磁性
膜、Ｗmは追加上部磁性膜８の厚さである。本作製例
は、図４の第２の作製例において、中心部に追加上部磁
性膜８を積み上げた構造である。スパイラル状の薄膜イ
ンダクタでは、図６の磁力線図に示したように磁性膜内
側で磁束が集中し、磁性膜が飽和することがある。これ
を緩和するため中心部に近い磁性膜に追加上部磁性膜８
を積み上げている。図４と基本的に同一構造で下部磁性
膜３の厚みを１５μｍ、追加上部磁性膜８の厚さは上部
磁性膜４の厚みと同一の１０μｍとし、Ｗmを１００μ
ｍとしてＭａｇｎｅｔｏｓｔａｔ Ｓｏｌｖｅｒにより
インダクタンスを計算すると、図４の第２の作製例の構
造よりも３９％増加した。また、下部磁性膜３の厚みを
さらに増しておけば、インダクタンスはさらに増加する
ことは明らかである。このように、追加上部磁性膜８を
積み上げることにより、磁性膜の磁束の集中が緩和さ
れ、インダクタンスが増加する。従って、インダクタン
スが増加する分、小形化が可能になるという効果が得ら
れる。FIG. 10 is a cross-sectional view of a thin-film inductor showing a seventh specific example of manufacture according to the embodiment of the present invention. In the figure, 1 is a substrate, 2 is an insulating layer, 3 is a lower magnetic film, 4 is an upper magnetic film, 5 is a planar coil having a spiral thin film structure whose line width is increased from the center, and 8 is an additional upper magnetic film. film, is W m is the thickness of the additional upper magnetic film 8. This production example has a structure in which an additional upper magnetic film 8 is stacked at the center in the second production example of FIG. In a spiral-shaped thin film inductor, as shown in the magnetic field diagram of FIG. 6, the magnetic flux concentrates inside the magnetic film, and the magnetic film may be saturated. To alleviate this, an additional upper magnetic film 8 is added to the magnetic film near the center.
Are piled up. Figure 4 is basically 15μm thickness of the lower magnetic film 3 in the same structure, the thickness of the additional upper magnetic film 8 is the same 10μm and the thickness of the upper magnetic layer 4, 100 microns to W m
When the inductance was calculated by Magnetostat Solver as m, it increased by 39% compared with the structure of the second manufacturing example in FIG. It is apparent that the inductance further increases if the thickness of the lower magnetic film 3 is further increased. Thus, by stacking the additional upper magnetic film 8, the concentration of the magnetic flux in the magnetic film is reduced, and the inductance is increased. Therefore, an effect is obtained that the size can be reduced as the inductance increases.
【００２９】図１１は、本発明の実施例による具体的な
第８の作製例を示す薄膜インダクタの断面図である。図
中、１は基板、２は絶縁層、３は下部磁性膜、４は上部
磁性膜、５は中心から離れるほど線幅を増大させたスパ
イラル状の薄膜構造の平面コイル、８は追加上部磁性
膜、９は絶縁層である。本作製例は、図１０の第７の作
製例で上部磁性膜４と追加上部磁性膜８との間に絶縁層
９を設ける構造である。図１０の第７の作製例では、磁
性膜の厚みが増加するため、スキンディプス以上の周波
数では、渦電流により磁性膜の損失が急激に増加する。
従って、これを避けるために磁性膜を積層構造にしたも
のである。本作製例の構造でも、上記第８の作製例と同
様の効果が得られることは明らかである。なお、この積
層構造は、第１から第７の作製例においても適用でき、
スキンディプス以上の周波数での渦電流による磁性膜の
損失の低減に効果があることは明らかである。FIG. 11 is a cross-sectional view of a thin-film inductor showing an eighth specific example according to the embodiment of the present invention. In the figure, 1 is a substrate, 2 is an insulating layer, 3 is a lower magnetic film, 4 is an upper magnetic film, 5 is a planar coil having a spiral thin film structure whose line width is increased from the center, and 8 is an additional upper magnetic film. The film 9 is an insulating layer. This manufacturing example has a structure in which an insulating layer 9 is provided between the upper magnetic film 4 and the additional upper magnetic film 8 in the seventh manufacturing example of FIG. In the seventh manufacturing example of FIG. 10, since the thickness of the magnetic film increases, the loss of the magnetic film sharply increases due to the eddy current at a frequency higher than the skin depth.
Therefore, in order to avoid this, the magnetic film has a laminated structure. It is clear that the structure of this manufacturing example can provide the same effects as those of the eighth manufacturing example. Note that this laminated structure can be applied to the first to seventh production examples,
It is clear that the effect of reducing the loss of the magnetic film due to the eddy current at a frequency higher than the skin depth is obtained.
【００３０】図１２は、本発明の実施例による具体的な
第９の作製例を示す薄膜インダクタの断面図である。図
中、１は基板、２は絶縁層、３は下部磁性膜、４は上部
磁性膜、５はスパイラル状の薄膜構造の平面コイル、９
は絶縁層である。本作製例は、図４の第２の作製例にお
いて中心から離れるほど線幅を増大させたスパイラル状
の平面コイル５の各コイルを分割構造とし、さらに、下
部磁性膜３および上部磁性膜４を絶縁層９を介して積層
構造とした構造である。第８の作製例で述べたと同様
に、コイルにおいてもスキンディプス以上の周波数で
は、渦電流によりコイルの損失が急激に増加する。従っ
て、本作製例は、これを避けるために各コイルを分割構
造にしたものである。本作製例の構造では、磁性膜およ
びコイルのスキンディプス以上の周波数においても図３
の第１の作製例と同様の効果が得られることは明らかで
ある。なお、この分割構造と積層構造は、第１から第８
までの作製例においても適用できる。FIG. 12 is a cross-sectional view of a thin-film inductor showing a ninth concrete example according to the embodiment of the present invention. In the figure, 1 is a substrate, 2 is an insulating layer, 3 is a lower magnetic film, 4 is an upper magnetic film, 5 is a planar coil having a spiral thin film structure, 9
Is an insulating layer. In this manufacturing example, in the second manufacturing example of FIG. 4, each coil of the spiral planar coil 5 whose line width is increased as the distance from the center increases is divided, and the lower magnetic film 3 and the upper magnetic film 4 are further divided. It has a laminated structure with an insulating layer 9 interposed therebetween. As described in the eighth manufacturing example, the loss of the coil increases sharply due to the eddy current at a frequency higher than the skin depth also in the coil. Therefore, in this manufacturing example, in order to avoid this, each coil has a divided structure. In the structure of this manufacturing example, even at a frequency equal to or higher than the skin depth of the magnetic film and the coil, FIG.
It is clear that the same effect as in the first production example can be obtained. The divided structure and the laminated structure correspond to the first to eighth structures.
The present invention can be applied to the above manufacturing examples.
【００３１】以上、本発明の実施例による具体的な作製
例を９例示したが、他のターン数でも平面コイル５の抵
抗の減少の効果は同様である。また、本実施例の作製例
では、平面コイル５が同心円状のコイルを接続してスパ
イラル状に形成した場合を示したが、いわゆる渦巻形を
したスパイラル状の場合でも任意断面で平面コイル５の
各幅を（１），（２），（３）式で求めれば良い。ま
た、方形や楕円形のように多少いびつな形状であって
も、半径や円周を等価的に真円に合わせて本発明を適用
できることは言うまでもない。このように本発明は、そ
の主旨に沿って種々に応用され、種々の実施態様を取り
得るものである。As described above, nine specific examples of manufacturing according to the embodiment of the present invention have been exemplified, but the effect of reducing the resistance of the planar coil 5 is the same for other numbers of turns. Further, in the production example of this embodiment, the case where the planar coil 5 is formed in a spiral shape by connecting concentric coils is shown. However, even in the case of a so-called spiral spiral shape, the planar coil 5 The respective widths may be obtained by the equations (1), (2) and (3). In addition, it is needless to say that the present invention can be applied to even a slightly distorted shape such as a square or an ellipse by equivalently adjusting the radius or circumference to a perfect circle. As described above, the present invention can be variously applied according to the gist and can take various embodiments.
【００３２】[0032]
【発明の効果】以上の説明で明らかなように、本発明の
高周波用として好適な薄膜インダクタおよび薄膜トラン
スによれば、限られた空間的制約の下で銅損が最小で、
性能係数の高い平面コイルを得ることができる。As is apparent from the above description, according to the thin-film inductor and the thin-film transformer suitable for high-frequency use of the present invention, copper loss is minimized under limited space constraints.
A planar coil having a high coefficient of performance can be obtained.
【００３３】さらに、本発明の薄膜インダクタおよび薄
膜トランスによれば、特に、中心に近い磁性膜の厚みを
増した構造としたため、磁性膜の磁束の集中が緩和さ
れ、インダクタンスが増加するので、インダクタンスが
増加する分、小形化が可能になるという効果が得られ
る。Furthermore, according to the thin film inductor and thin film transformer of the present invention, in particular, due to the structure of increased thickness near the magnetic film to the center, the concentration of the magnetic flux of the magnetic film is reduced, the inductance is increased, The effect that the size can be reduced is obtained by the increase in the inductance.
【図１】（ａ），（ｂ）は本発明の平面コイル部の一実
施例を示す上面図と断面図FIGS. 1 (a) and 1 (b) are a top view and a sectional view showing one embodiment of a planar coil portion of the present invention.
【図２】本発明の平面コイル部の別の構成例を示す上面
図FIG. 2 is a top view showing another configuration example of the planar coil unit of the present invention.
【図３】（ａ），（ｂ）は上記の実施例による具体的な
第１の作製例を示す上面図と断面図FIGS. 3A and 3B are a top view and a cross-sectional view illustrating a specific first manufacturing example according to the above embodiment.
【図４】上記第１の作製例の一部を変更した第２の作製
例を示す断面図FIG. 4 is a cross-sectional view showing a second manufacturing example in which a part of the first manufacturing example is changed.
【図５】上記第１の作製例の断面における磁力線図FIG. 5 is a magnetic force diagram in a cross section of the first manufacturing example.
【図６】上記の実施例による具体的な第３の作製例を示
す断面図FIG. 6 is a sectional view showing a third specific example of manufacture according to the above embodiment.
【図７】上記の実施例による具体的な第４の作製例を示
す断面図FIG. 7 is a cross-sectional view showing a fourth specific example of manufacture according to the above embodiment.
【図８】上記の実施例による具体的な第５の作製例を示
す断面図FIG. 8 is a cross-sectional view showing a fifth specific example of manufacture according to the above embodiment.
【図９】上記の実施例による具体的な第６の作製例を示
す断面図FIG. 9 is a cross-sectional view showing a specific sixth fabrication example according to the above embodiment.
【図１０】上記の実施例による具体的な第７の作製例を
示す断面図FIG. 10 is a cross-sectional view showing a specific seventh fabrication example according to the above embodiment.
【図１１】上記の実施例による具体的な第８の作製例を
示す断面図FIG. 11 is a sectional view showing a specific eighth fabrication example according to the above embodiment.
【図１２】上記の実施例による具体的な第９の作製例を
示す断面図FIG. 12 is a cross-sectional view showing a ninth specific example of manufacture according to the above embodiment.
【図１３】（ａ），（ｂ）は従来例を示す上面図と断面
図13A and 13B are a top view and a cross-sectional view showing a conventional example.
１…基板 ２…絶縁層 ３…下部磁性膜 ４…上部磁性膜 ５…平面コイル ５ａ…平面コイル切断部 ５ｂ…平面コイル接続部 ６…１次平面コイル ７…２次平面コイル ８…追加上部磁性膜 ９…絶縁層 DESCRIPTION OF SYMBOLS 1 ... Substrate 2 ... Insulating layer 3 ... Lower magnetic film 4 ... Upper magnetic film 5 ... Plane coil 5a ... Plane coil cut part 5b ... Plane coil connection part 6 ... Primary plane coil 7 ... Secondary plane coil 8 ... Additional upper magnetism Film 9 ... insulating layer
フロントページの続き (56)参考文献 特開 平３−211810（ＪＰ，Ａ) 特開 昭50−58524（ＪＰ，Ａ) (58)調査した分野(Int.Cl.7，ＤＢ名) H01F 27/28 H01F 17/00 H01F 30/00 H01F 37/00 Continuation of the front page (56) References JP-A-3-211810 (JP, A) JP-A-50-58524 (JP, A) (58) Fields investigated (Int. Cl. 7 , DB name) H01F 27 / 28 H01F 17/00 H01F 30/00 H01F 37/00
Claims (2)
の導電性薄膜からなる巻線が埋め込まれ前記絶縁体の外
側が磁性薄膜で覆われている薄膜インダクタにおいて、
前記巻線の各部分の銅損が同一もしくは概ね同一となる
ように前記巻線の幅が中心から遠ざかるに従い増大され
ているとともに、前記磁性薄膜の中心に近い部分の膜厚
が周辺部の膜厚よりも厚いことを特徴とする薄膜インダ
クタ。1. A thin-film inductor in which a winding made of a spiral conductive thin film is embedded in a donut-shaped insulator and the outside of the insulator is covered with a magnetic thin film.
The width of the winding is increased as the distance from the center is increased so that the copper loss of each portion of the winding is the same or substantially the same, and the film thickness of the portion close to the center of the magnetic thin film
There thin film inductor you wherein a greater thickness than the peripheral portion.
ラル状の導電性薄膜からなる巻線が埋め込まれ前記絶縁
体の外側が磁性薄膜で覆われている薄膜トランスにおい
て、前記巻線の各部分の銅損が同一もしくは概ね同一と
なるように前記巻線の幅が中心から遠ざかるに従い増大
されているとともに、前記磁性薄膜の中心に近い部分の
膜厚が周辺部の膜厚よりも厚いことを特徴とする薄膜ト
ランス。2. A thin film transformer in which a plurality of spiral conductive thin films are embedded in a donut-shaped insulator and the outside of the insulator is covered with a magnetic thin film. The width of the winding is increased as the distance from the center is increased so that the copper loss of the portion is the same or substantially the same, and the width of the portion near the center of the magnetic thin film is increased .
Thin film transformer thickness you wherein a greater thickness than the peripheral portion.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17954693A JP3359099B2 (en) | 1993-07-21 | 1993-07-21 | Thin film inductor and thin film transformer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17954693A JP3359099B2 (en) | 1993-07-21 | 1993-07-21 | Thin film inductor and thin film transformer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0737728A JPH0737728A (en) | 1995-02-07 |
| JP3359099B2 true JP3359099B2 (en) | 2002-12-24 |
Family
ID=16067643
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17954693A Expired - Lifetime JP3359099B2 (en) | 1993-07-21 | 1993-07-21 | Thin film inductor and thin film transformer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3359099B2 (en) |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002134319A (en) * | 2000-10-23 | 2002-05-10 | Alps Electric Co Ltd | Spiral inductor |
| US6847284B2 (en) | 2001-03-05 | 2005-01-25 | Tdk Corporation | Planar coil and planar transformer |
| JP3614816B2 (en) * | 2001-12-26 | 2005-01-26 | 松下電器産業株式会社 | Magnetic element and power source using the same |
| KR100828380B1 (en) * | 2002-05-15 | 2008-05-08 | 엘지이노텍 주식회사 | Pattern structure of low temperature co-fired ceramic |
| EP1536433A1 (en) * | 2003-11-28 | 2005-06-01 | Freescale Semiconductor, Inc. | High frequency thin film electrical circuit element |
| JP2007227566A (en) * | 2006-02-22 | 2007-09-06 | Tdk Corp | Coil component |
| US7504705B2 (en) * | 2006-09-29 | 2009-03-17 | International Business Machines Corporation | Striped on-chip inductor |
| JP2009117546A (en) * | 2007-11-05 | 2009-05-28 | Asahi Kasei Electronics Co Ltd | Planar coil, and manufacturing method thereof |
| US8742857B2 (en) * | 2008-05-15 | 2014-06-03 | Analog Devices, Inc. | Inductance enhanced rotary traveling wave oscillator circuit and method |
| KR102004791B1 (en) | 2014-05-21 | 2019-07-29 | 삼성전기주식회사 | Chip electronic component and board having the same mounted thereon |
| JP6825189B2 (en) * | 2015-07-29 | 2021-02-03 | サムソン エレクトロ−メカニックス カンパニーリミテッド． | Coil parts and their manufacturing methods |
| CN209168856U (en) | 2016-07-15 | 2019-07-26 | 株式会社村田制作所 | High frequency transformer and phase shifter |
| JP7233893B2 (en) * | 2017-11-21 | 2023-03-07 | 台湾東電化股▲ふん▼有限公司 | radio equipment |
| US10784044B2 (en) | 2018-04-30 | 2020-09-22 | Integrated Device Technology, Inc. | Optimization of transmit and transmit/receive (TRX) coils for wireless transfer of power |
| US11854732B2 (en) | 2018-10-31 | 2023-12-26 | Tdk Corporation | Coil component |
| JP7283127B2 (en) * | 2019-02-27 | 2023-05-30 | Tdk株式会社 | coil parts |
| GB202110822D0 (en) * | 2021-07-28 | 2021-09-08 | Univ Limerick | A spiral inductor and a transformer formed thereof |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5235097B2 (en) * | 1973-09-14 | 1977-09-07 | ||
| JP2999494B2 (en) * | 1990-01-17 | 2000-01-17 | 毅 池田 | Laminated LC noise filter and method of manufacturing the same |
-
1993
- 1993-07-21 JP JP17954693A patent/JP3359099B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0737728A (en) | 1995-02-07 |
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