JP3346660B2 - Adhesive tape and method for removing foreign matter adhering to semiconductor wafer - Google Patents
Adhesive tape and method for removing foreign matter adhering to semiconductor waferInfo
- Publication number
- JP3346660B2 JP3346660B2 JP24881794A JP24881794A JP3346660B2 JP 3346660 B2 JP3346660 B2 JP 3346660B2 JP 24881794 A JP24881794 A JP 24881794A JP 24881794 A JP24881794 A JP 24881794A JP 3346660 B2 JP3346660 B2 JP 3346660B2
- Authority
- JP
- Japan
- Prior art keywords
- adhesive tape
- semiconductor wafer
- foreign matter
- wafer
- adhesive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Landscapes
- Cleaning Or Drying Semiconductors (AREA)
- Cleaning In General (AREA)
- Adhesive Tapes (AREA)
- Adhesives Or Adhesive Processes (AREA)
Description
【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION
【０００１】[0001]
【産業上の利用分野】本発明は、半導体製造プロセスに
おける洗浄工程に適用される、半導体ウエハに付着した
異物の除去用粘着テ―プと除去方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an adhesive tape for removing foreign matter adhering to a semiconductor wafer and a method for removing the foreign matter attached to a semiconductor wafer, which is applied to a cleaning step in a semiconductor manufacturing process.
【０００２】[0002]
【従来の技術】ＬＳＩの高密度化、高集積化、また回路
の多様化が進むにつれて、半導体ウエハに存在する塵
埃、金属不純物などの異物（パ―テイクル）が製品の歩
留り、製品の信頼性に大きく影響するようになつてき
た。たとえば、半導体ウエハの表面（回路パタ―ン形成
面）に存在する異物は、回路形成時に回路の断線やシヨ
―トの原因となる。また、半導体ウエハの裏面（回路パ
タ―ン面の反対面）に存在する異物は、回路形成時の露
光工程で焦点を狂わす原因となり、また隣接するウエハ
の表面に転写して回路の断線やシヨ―トの原因となる。2. Description of the Related Art As the density and integration of LSIs and the diversification of circuits have increased, foreign substances (particles) such as dust and metal impurities present on semiconductor wafers have increased product yield and product reliability. Has come to have a significant effect. For example, foreign matter present on the surface (circuit pattern forming surface) of a semiconductor wafer causes disconnection or short-circuit of a circuit at the time of circuit formation. In addition, foreign matter present on the back surface of the semiconductor wafer (opposite to the circuit pattern surface) may cause defocus in the exposure process at the time of circuit formation, and may be transferred to the surface of an adjacent wafer to break the circuit or cause a short circuit. -May cause damage.
【０００３】このため、ＬＳＩの製造工程では、製造工
程内の清浄度のレベルアツプ、ウエハ洗浄技術のレベル
アツプに努めており、さまざまな清浄化技術が提案さ
れ、実施されてきた。とくに、洗浄工程は全工程の約３
０％を占めており、歩留りや信頼性アツプのキ―ポイン
トである。しかし、最近のＬＳＩの高密度化、高集積化
に伴い、従来のウエハ洗浄方法の問題が顕在化してき
た。For this reason, in the LSI manufacturing process, efforts are being made to increase the level of cleanliness in the manufacturing process and the level of wafer cleaning technology, and various cleaning technologies have been proposed and implemented. In particular, the cleaning process is about 3
It accounts for 0%, which is a key point for improving yield and reliability. However, with the recent increase in the density and integration of LSIs, the problem of the conventional wafer cleaning method has become apparent.
【０００４】ウエハ洗浄方法には、ウエツト洗浄（超純
水、薬液などによる）と、ドライ洗浄（ＵＶオゾン、Ｏ
2 プラズマなど）があり、一般にはウエツト洗浄がその
汎用性、経済性のバランスのよさから頻繁に適用され
る。ウエツト洗浄の問題点は、洗浄によりウエハから除
去された異物のウエハへの再付着であり、とくにウエハ
裏面に付着している異物は著しい汚染源となる。また、
ウエツト洗浄は乾燥工程を必要とするため、乾燥工程で
のウエハ汚染の問題が同様に存在する。[0004] Wafer cleaning methods include wet cleaning (using ultrapure water, chemicals, etc.) and dry cleaning (UV ozone, O
2 ) etc., and wet cleaning is frequently applied because of its good balance between versatility and economy. The problem of wet cleaning is the reattachment of foreign matter removed from the wafer by the cleaning to the wafer, and in particular, foreign matter adhering to the back surface of the wafer becomes a significant source of contamination. Also,
Since wet cleaning requires a drying step, the problem of wafer contamination during the drying step also exists.
【０００５】ウエツト洗浄の短所を補う洗浄方法とし
て、洗浄方法のドライ化（ＵＶオゾン、Ｏ2 プラズマな
ど）が進んでおり、異物の再付着の低減、乾燥工程の省
略などの利点を活かしているが、ドライ洗浄は異物に対
して十分な除去能力を示さず、多量の汚染物の除去に適
していないことがわかつてきた。As a cleaning method for compensating for the disadvantages of wet cleaning, dry cleaning methods (UV ozone, O 2 plasma, etc.) have been promoted, and advantages such as reduction of reattachment of foreign substances and omission of a drying step have been utilized. However, it has been found that dry cleaning does not show a sufficient ability to remove foreign substances and is not suitable for removing a large amount of contaminants.
【０００６】別の試みとして、特開昭４８−３５７７１
号公報、特開昭５３−９２６６５号公報、特開平１−１
３５５７４号公報などには、粘着テ―プを用い、半導体
ウエハの表面に付着した異物を上記テ―プの粘着剤層面
に吸着させて除去する方法が提案されている。この方法
は、一種のドライ洗浄といえるので、ウエツト洗浄にお
ける異物の再付着の問題や乾燥工程での汚染の問題を回
避することができ、しかもＵＶオゾン、Ｏ2 プラズマな
どの他のドライ洗浄に比べ、異物の除去能力をより高め
られるものと期待されている。As another attempt, JP-A-48-35771 discloses
JP, JP-A-53-92665, JP-A-1-1-1
Japanese Patent No. 35574 proposes a method of removing foreign substances adhering to the surface of a semiconductor wafer by using an adhesive tape by adsorbing the foreign substance on the surface of the adhesive layer of the tape. Since this method can be said to be a kind of dry cleaning, the problem of reattachment of foreign substances in wet cleaning and the problem of contamination in the drying process can be avoided, and it can be applied to other dry cleaning such as UV ozone and O 2 plasma. In comparison, it is expected that the ability to remove foreign substances can be further enhanced.
【０００７】[0007]
【発明が解決しようとする課題】しかるに、上記提案の
方法は、粘着テ―プとして、塑性変形しやすい高粘着力
のものを用いても、異物除去効果が十分に上がらず、逆
に剥離操作に際し、糊残りによるウエハ表面の汚染やウ
エハ損傷の問題を生じやすく、さらに粘着剤中に含まれ
る不純物によるアルミ配線などの腐食の問題もあつた。However, in the above-mentioned method, even if an adhesive tape having a high adhesive strength that is easily plastically deformed is used, the foreign matter removing effect is not sufficiently improved, and conversely, the peeling operation is not performed. In such a case, problems such as contamination of the wafer surface due to adhesive residue and damage to the wafer are likely to occur, and there is also a problem of corrosion of aluminum wiring and the like due to impurities contained in the adhesive.
【０００８】本発明は、このような事情に鑑み、ウエツ
ト洗浄方式に比べて有用な粘着テ―プを用いたドライ洗
浄方式において、特定の粘着テ―プを用いることによつ
て、糊残りによるウエハ表面の汚染やウエハ損傷の問
題、さらには不純物によるアルミ配線などの腐食の問題
をきたすことなく、半導体ウエハに付着した異物を高い
除去率で除去することを目的としている。In view of such circumstances, the present invention provides a dry cleaning system using an adhesive tape which is more useful than a wet cleaning system, and uses a specific adhesive tape to reduce adhesive residue. It is an object of the present invention to remove foreign matters adhering to a semiconductor wafer at a high removal rate without causing problems such as contamination of a wafer surface, damage to a wafer, and corrosion of aluminum wiring or the like due to impurities.
【０００９】[0009]
【課題を解決するための手段】本発明者らは、上記の目
的に対して、鋭意検討した結果、粘着テ―プとして、ア
クリル酸アルキルエステルまたはメタクリル酸アルキル
エステル系ポリマ―を主成分とした、特定のゲル分率お
よび特定の粘着力を有するものを用いたときには、糊残
りによるウエハ表面の汚染やウエハ損傷の問題、さらに
は不純物によるアルミ配線などの腐食の問題を一切きた
すことなく、半導体ウエハに付着した異物を高い除去率
で除去できることを見い出し、本発明を完成するに至つ
た。The present inventors have SUMMARY OF THE INVENTION may, for the above purposes, a result of intensive studies, the adhesive tape - as a flop, A
Alkyl acrylate or alkyl methacrylate
When using an ester polymer as the main component and having a specific gel fraction and specific adhesive strength, there is a problem of wafer surface contamination and wafer damage due to adhesive residue, and corrosion of aluminum wiring etc. due to impurities. It has been found that foreign matter adhering to a semiconductor wafer can be removed at a high removal rate without causing any problem described above, and the present invention has been completed.
【００１０】すなわち、本発明は、第一に、上記特定の
粘着テ―プとして、支持フイルム上に粘着剤層を設けて
なり、この粘着剤層が、アクリル酸アルキルエステルま
たはメタクリル酸アルキルエステル系ポリマ―（以下、
アクリル系ポリマ―という）を主成分とし、ゲル分率が
５０％以上で、シリコンウエハ（ミラ―面）に対する１
８０度引き剥がし粘着力が５００ｇ以下／２０mm幅であ
ることを特徴とする半導体ウエハに付着した異物の除去
用粘着テ―プを提供するものである。That is, the present invention comprises, first, an adhesive layer provided on a support film as the above-mentioned specific adhesive tape, and this adhesive layer is formed of an alkyl acrylate or an alkyl acrylate.
Or methacrylic acid alkyl ester-based polymer (hereinafter, referred to as
Acrylic polymer) as a main component, a gel fraction of 50% or more, and a ratio of 1 to a silicon wafer (mirror surface).
An object of the present invention is to provide an adhesive tape for removing foreign substances adhering to a semiconductor wafer, wherein the adhesive tape has an 80-degree peeling adhesive strength of 500 g or less / 20 mm width.
【００１１】また、第二に、半導体ウエハの表面および
／または裏面に、上記特定の粘着テ―プを貼り付けたの
ち、剥離操作して、半導体ウエハの表面および／または
裏面に付着する異物を粘着剤層面に吸着させて半導体ウ
エハから除去することを特徴とする半導体ウエハに付着
した異物の除去方法を提供するものである。Second, after the specific adhesive tape is attached to the front and / or back surface of the semiconductor wafer, a peeling operation is performed to remove foreign substances adhering to the front and / or back surface of the semiconductor wafer. An object of the present invention is to provide a method for removing foreign matter adhering to a semiconductor wafer, wherein the foreign matter is adhered to a surface of an adhesive layer and removed from the semiconductor wafer.
【００１２】[0012]
【発明の構成・作用】図１は、本発明の異物除去用粘着
テ―プの一例を示したものである。１は粘着テ―プで、
支持フイルム１１上に粘着剤層１２を設け、この上にセ
パレ―タ１３を重ね合わせた構成となつている。FIG. 1 shows an example of an adhesive tape for removing foreign matter according to the present invention. 1 is an adhesive tape,
An adhesive layer 12 is provided on a support film 11, and a separator 13 is superposed thereon.
【００１３】支持フイルム１１は、たとえば、ポリエス
テル、ポリカ―ボネ―ト、ポリ塩化ビニル、エチレン−
酢酸ビニル共重合体、エチレン−エチルアクリレ―ト共
重合体、ポリエチレン、ポリプロピレン、エチレン−プ
ロピレン共重合体などのプラスチツクからなる厚さが通
常１０〜１，０００μｍのフイルムである。The support film 11 is made of, for example, polyester, polycarbonate, polyvinyl chloride, ethylene-
The film is usually made of a plastic such as vinyl acetate copolymer, ethylene-ethyl acrylate copolymer, polyethylene, polypropylene, ethylene-propylene copolymer and the like and has a thickness of usually 10 to 1,000 μm.
【００１４】粘着剤層１２は、アクリル系ポリマ―を主
成分とした、常態下で粘着力、つまり感圧接着性を有す
るもので、ゲル分率が５０％以上、好ましくは５５〜９
５％で、シリコンウエハ（ミラ―面）に対する１８０度
引き剥がし粘着力が５００ｇ以下／２０mm幅、好ましく
は５０〜３００ｇ／２０mm幅とされたものである。な
お、ゲル分率は、粘着剤層１２を支持フイルム１１上か
ら剥ぎ取つて、トルエン（２０℃）中に２４時間浸漬
し、浸漬前後の重量変化から算出される値である。ま
た、上記の１８０度引き剥がし粘着力は、ＪＩＳ Ｚ−
０２３７に準じて、常温、剥離速度３００mm／分の条件
下で測定される値である。The pressure-sensitive adhesive layer 12 is mainly composed of an acrylic polymer and has tackiness under normal conditions, that is, pressure-sensitive adhesiveness, and has a gel fraction of 50% or more, preferably 55 to 9%.
At 5%, the 180 ° peel adhesion to the silicon wafer (mirror surface) is 500 g or less / 20 mm width, preferably 50 to 300 g / 20 mm width. The gel fraction is a value calculated from the weight change before and after immersion in toluene (20 ° C.) for 24 hours after peeling off the pressure-sensitive adhesive layer 12 from the support film 11. In addition, the above 180 degree peeling adhesive strength is JIS Z-
It is a value measured under the conditions of normal temperature and a peeling speed of 300 mm / min according to 0237.
【００１５】このようなアクリル系ポリマ―を主成分と
した粘着剤層１２は、天然ゴムや合成ゴムなどを主成分
とした他の粘着剤に比べて、イオン性不純物が少なく、
これを半導体ウエハに適用しても、不純物によるアルミ
配線などの腐食の問題をきたさない。また、ゲル分率が
５０％以上であることにより、異物の吸着固定力が大き
くなつて、除去効果が飛躍的に向上し、しかも剥離操作
時のウエハ表面への糊残りが少なくなつて、ウエハの汚
染が回避される。さらに、１８０度引き剥がし粘着力が
５００ｇ以下／２０mm幅であることにより、剥離操作が
容易となつて、剥離操作時に半導体ウエハに損傷をきた
す心配がない。The pressure-sensitive adhesive layer 12 mainly composed of such an acrylic polymer has less ionic impurities than other pressure-sensitive adhesives mainly composed of natural rubber or synthetic rubber.
Even if this is applied to a semiconductor wafer, there is no problem of corrosion of aluminum wiring or the like due to impurities. Further, when the gel fraction is 50% or more, the force of adsorbing and fixing foreign matter is increased, the removal effect is dramatically improved, and the adhesive residue on the wafer surface at the time of the peeling operation is reduced. Contamination is avoided. Furthermore, since the 180 degree peeling adhesive strength is 500 g or less / 20 mm width, the peeling operation becomes easy, and there is no fear of damaging the semiconductor wafer during the peeling operation.
【００１６】この粘着剤層１２は、アクリル系ポリマ―
に架橋剤としてポリイソシアネ―ト化合物、エポキシ系
化合物、メラミン系化合物、過酸化物などを配合し、必
要によりその他の添加剤を配合した粘着剤組成物を、支
持フイルム１１上に塗着したのち、加熱などにより架橋
処理するか、あるいは離型紙上に上記と同じ方法で形成
した粘着剤層を支持フイルム１１上に貼着することによ
り、形成できる。その際、アクリル系ポリマ―の組成や
分子量などに応じて、架橋剤の種類や添加量、架橋処理
の条件などを選択することにより、ゲル分率および粘着
力を前記範囲に容易に設定できる。このようにして形成
される粘着剤層１２の厚さは、とくに限定されないが、
通常は５〜１００μｍであるのがよい。The pressure-sensitive adhesive layer 12 is made of an acrylic polymer.
A polyisocyanate compound, an epoxy-based compound, a melamine-based compound, a peroxide, and the like are blended as a crosslinking agent, and an adhesive composition blended with other additives as necessary is coated on the support film 11, The cross-linking treatment can be performed by heating or the like, or the pressure-sensitive adhesive layer formed on the release paper by the same method as described above can be formed on the support film 11 to form the adhesive layer. At this time, the gel fraction and the adhesive strength can be easily set in the above ranges by selecting the type and amount of the crosslinking agent, the conditions of the crosslinking treatment, and the like according to the composition and the molecular weight of the acrylic polymer. The thickness of the pressure-sensitive adhesive layer 12 thus formed is not particularly limited,
Usually, it is good to be 5-100 micrometers.
【００１７】上記のアクリル系ポリマ―は、一般に、ア
クリル酸アルキルエステルまたはメタクリル酸アルキル
エステル〔以下、両者を（メタ）アクリル酸アルキルエ
ステルと総称する〕を主モノマ―とし、これに架橋性官
能基を有する共重合性モノマ―と、さらに必要によりそ
の他の改質用モノマ―を加えたモノマ―混合物を、乳化
重合方式、バルク重合方式、溶液重合方式などの重合方
式により、ラジカル重合させることにより、合成でき
る。このようにして得られるアクリル系ポリマ―は、低
分子量物の含有量が少ないものであるのがよく、その数
平均分子量が４０万以上、とくに４０万〜３００万の範
囲にあるものが望ましい。[0017] The above-mentioned acrylic polymer - is, generally, A
Alkyl acrylate or alkyl methacrylate
Ester [hereinafter, both are alkyl (meth) acrylates]
Collectively referred to as ester] main monomer - and, copolymerizable monomer having a crosslinkable functional group thereto - and other reforming monomers by further necessary - the monomer was added - the mixture, the emulsion polymerization method, bulk polymerization It can be synthesized by radical polymerization according to a polymerization method such as a polymerization method and a solution polymerization method. The acrylic polymer thus obtained preferably has a low content of low molecular weight substances, and preferably has a number average molecular weight of 400,000 or more, particularly in the range of 400,000 to 3,000,000.
【００１８】主モノマ―である（メタ）アクリル酸アル
キルエステルとしては、たとえば、メチル基、エチル
基、プロピル基、ブチル基、イソデシル基、イソアミル
基、ヘキシル基、２−エチルヘキシル基、イソオクチル
基、イソノニル基、イソデシル基、ドデシル基などの炭
素数が３０以下、とくに１４以下のアルキル基を有する
アクリル酸やメタクリル酸のアルキルエステルが用いら
れる。The alkyl (meth) acrylate as the main monomer includes, for example, methyl, ethyl, propyl, butyl, isodecyl, isoamyl, hexyl, 2-ethylhexyl, isooctyl, isononyl. An alkyl ester of acrylic acid or methacrylic acid having an alkyl group of 30 or less, particularly 14 or less, such as a group, an isodecyl group or a dodecyl group is used.
【００１９】架橋性官能基を有する共重合性モノマ―と
しては、アクリル酸、メタクリル酸、無水マレイン酸、
イタコン酸などのカルボキシル基含有モノマ―、アクリ
ル酸２−ヒドロキシエチル、メタクリル酸２−ヒドロキ
シエチル、アクリル酸２−ヒドロキシプロピル、メタク
リル酸２−ヒドロキシプロピル、Ｎ−メチロ―ルアクリ
ルアミドなどのヒドロキシ基含有モノマ―、アクリルア
ミド、メタクリルアミドなどのアミド基含有モノマ―、
アクリル酸グリシジル、メタクリル酸グリシジルなどの
エポキシ基含有モノマ―、Ｎ，Ｎ−ジメチルアミノエチ
ルアクリレ―トなどのアミノ基含有モノマ―などが挙げ
られる。これらのモノマ―は、粘着剤のゲル分率や粘着
力を調整するために用いられるものであり、一般には、
主モノマ―である（メタ）アクリル酸アルキルエステル
１００重量部に対して、０．１〜３０重量部、好ましく
は２〜１０重量部の割合で用いられる。Examples of the copolymerizable monomer having a crosslinkable functional group include acrylic acid, methacrylic acid, maleic anhydride,
Carboxyl group-containing monomers such as itaconic acid, and hydroxy-group-containing monomers such as 2-hydroxyethyl acrylate, 2-hydroxyethyl methacrylate, 2-hydroxypropyl acrylate, 2-hydroxypropyl methacrylate, and N-methylolacrylamide -, Acrylamide, amide group-containing monomers such as methacrylamide-
Examples include epoxy group-containing monomers such as glycidyl acrylate and glycidyl methacrylate, and amino group-containing monomers such as N, N-dimethylaminoethyl acrylate. These monomers are used to adjust the gel fraction and adhesive strength of the adhesive, and generally,
It is used in a proportion of 0.1 to 30 parts by weight, preferably 2 to 10 parts by weight, based on 100 parts by weight of the alkyl (meth) acrylate as the main monomer.
【００２０】必要により用いられるその他の改質用モノ
マ―としては、たとえば、酢酸ビニル、スチレン、Ｎ−
ビニルピロリドン、アクリロニトリル、メタクリロニト
リルなどの、いわゆるアクリル系粘着剤に通常用いられ
るものがすべて使用できる。これらの改質用モノマ―の
使用量は、主モノマ―である（メタ）アクリル酸アルキ
ルエステルとの合計量中、通常５０重量％以下であるの
がよい。Other modifying monomers used as necessary include, for example, vinyl acetate, styrene, N-
All those commonly used for so-called acrylic pressure-sensitive adhesives, such as vinylpyrrolidone, acrylonitrile, and methacrylonitrile, can be used. The amount of these modifying monomers to be used is usually preferably 50% by weight or less in the total amount of the main monomers and the alkyl (meth) acrylate.
【００２１】セパレ―タ１３は、粘着テ―プ１の保管時
や流通時などでの汚染防止の点から、半導体ウエハに貼
り付けるまでの間、粘着剤層１２の表面を保護するため
のもので、上記貼り付け使用時に剥離除去される。この
セパレ―タ１３は、通常、紙（無塵紙）、プラスチツク
フイルム、金属箔などからなる柔軟な薄葉体で、必要に
より剥離剤で表面処理して離型性を付与したものが用い
られる。The separator 13 protects the surface of the pressure-sensitive adhesive layer 12 from the point of prevention of contamination during storage and distribution of the pressure-sensitive adhesive tape 1 until it is attached to a semiconductor wafer. Then, it is peeled and removed at the time of using the above-mentioned bonding. The separator 13 is usually a flexible thin sheet made of paper (dust-free paper), plastic film, metal foil or the like, and is used if necessary by releasing the surface by a release agent if necessary.
【００２２】本発明においては、上記構成の粘着テ―プ
を用いて、半導体ウエハに付着した異物を除去するが、
この方法は、まず、半導体ウエハの表面および／または
裏面の全面に粘着テ―プを貼り付けて、粘着剤層面を上
記ウエハ上の異物に対し十分に馴染ませる。これは、た
とえば、粘着テ―プをウエハ上にハンドロ―ラにより押
圧したのち、数分程度放置するといつた方法で行えばよ
い。In the present invention, foreign matter adhering to the semiconductor wafer is removed by using the adhesive tape having the above-described structure.
In this method, first, an adhesive tape is attached to the entire surface of the front and / or back surface of the semiconductor wafer, and the surface of the adhesive layer is sufficiently adapted to the foreign matter on the wafer. This may be performed by, for example, pressing the adhesive tape on the wafer with a hand roller and then leaving the tape for several minutes.
【００２３】このように貼り付けたのち、粘着テ―プの
端部より引き剥がす、剥離操作を施すと、半導体ウエハ
上の異物は粘着剤層面に強く吸着固定されて、上記ウエ
ハから効果的に除去される。その際、半導体ウエハ表面
の損傷や糊残りによる汚染といつた問題はほとんど生じ
ない。また、粘着剤中の不純物がその後のアルミ配線部
分などを腐食させるといつた心配もとくにない。When the adhesive tape is peeled off from the end of the adhesive tape and subjected to a peeling operation, the foreign matter on the semiconductor wafer is strongly adsorbed and fixed to the surface of the adhesive layer, and is effectively removed from the wafer. Removed. At that time, problems such as damage to the surface of the semiconductor wafer and contamination due to adhesive residue hardly occur. Also, there is no worry that impurities in the adhesive will corrode the subsequent aluminum wiring and the like.
【００２４】このようにして半導体ウエハ上の異物を高
い除去率（通常０．２μｍ以上の大きさの異物を７５％
以上の除去率）で洗浄除去することができ、これによ
り、回路形成時の回路の断線やシヨ―ト、露光不良発生
が低減し、最終的に作製される半導体デバイスの歩留り
や信頼性が大幅に向上する。また、地球環境保全の立場
からみて、従来のウエツト洗浄やドライ洗浄のような純
水、薬品、空気、電力などを大量に消費する洗浄方式
を、上記本発明の方式に置き換えることで、地球環境保
全に大きく寄与させることもできる。Thus, a high removal rate of foreign matter on the semiconductor wafer (usually, a foreign matter having a size of 0.2 μm or more
(Removal rate above), thereby reducing the occurrence of disconnection, short circuit, and exposure failure of the circuit when forming the circuit, and greatly increasing the yield and reliability of the finally manufactured semiconductor device. To improve. Also, from the standpoint of global environmental protection, by replacing the conventional cleaning method that consumes a large amount of pure water, chemicals, air, and electric power, such as wet cleaning and dry cleaning, with the method of the present invention described above, It can greatly contribute to conservation.
【００２５】[0025]
【発明の効果】以上のように、本発明の異物除去用粘着
テ―プとその除去方法によれば、半導体ウエハの損傷や
糊残りによる汚染といつた問題、さらには粘着剤中の不
純物によるアルミ配線などの腐食の問題をきたすことな
く、半導体ウエハに付着した異物を高い除去率で洗浄除
去できる効果があり、また従来の他の洗浄方式などに比
べて、地球環境保全の面での寄与効果も得られる。As described above, according to the pressure-sensitive adhesive tape for removing foreign matter and the method of removing the same according to the present invention, problems such as damage to semiconductor wafers and contamination due to adhesive residue, and impurities due to impurities in the pressure-sensitive adhesive. It has the effect of removing foreign substances adhering to semiconductor wafers at a high removal rate without causing corrosion problems such as aluminum wiring, and contributes to global environmental conservation compared to other conventional cleaning methods. The effect is also obtained.
【００２６】[0026]
【実施例】つぎに、本発明の実施例を記載して、より具
体的に説明する。なお以下、部とあるのは重量部を意味
するものとする。Next, an embodiment of the present invention will be described in more detail. Hereinafter, “parts” means “parts by weight”.
【００２７】実施例１ アクリル酸ｎ−ブチル８０部とアクリロニトリル１５部
とアクリル酸５部を、酢酸エチル中で常法により共重合
させることにより、数平均分子量が８０万のアクリル系
ポリマ―を含むポリマ―溶液を得た。このポリマ―溶液
に、アクリル系ポリマ―１００部に対し、ポリイソシア
ネ−ト化合物からなる架橋剤３部を加えて、粘着剤溶液
を調製した。Example 1 An acrylic polymer having a number average molecular weight of 800,000 was obtained by copolymerizing 80 parts of n-butyl acrylate, 15 parts of acrylonitrile and 5 parts of acrylic acid by a conventional method in ethyl acetate. A polymer solution was obtained. To this polymer solution was added 3 parts of a crosslinking agent composed of a polyisocyanate compound to 100 parts of an acrylic polymer to prepare an adhesive solution.
【００２８】厚さ５０μｍのポリエステル支持フイルム
のコロナ処理面に、上記の粘着剤溶液を塗布し、１２０
℃で１０分間加熱架橋処理して、厚さ２０μｍの粘着剤
層を有する粘着テ―プを作製した。この粘着テ―プの粘
着剤層のゲル分率は５５％、シリコンウエハ（ミラ―
面）に対する粘着力は、ＪＩＳ Ｚ−０２３７に準じて
測定される１８０度引き剥がし粘着力（常温、剥離速度
３００mm／分）で２００ｇ／２０mm幅であつた。The above-mentioned pressure-sensitive adhesive solution was applied to the corona-treated surface of a polyester support film having a thickness of 50 μm.
An adhesive tape having an adhesive layer having a thickness of 20 μm was prepared by heat crosslinking at 10 ° C. for 10 minutes. The gel fraction of the adhesive layer of this adhesive tape is 55%, and the silicon wafer (mirror)
The adhesive strength to the surface (face) was 200 g / 20 mm width as a 180 degree peeling adhesive strength (normal temperature, peeling speed 300 mm / min) measured according to JIS Z-0237.
【００２９】つぎに、０．２μｍ以上の大きさの異物が
０個である５インチシリコンウエハ（回路パタ―ンのな
いミラ―ウエハ）を所定の工程（イオン打ち込み処理工
程）に通して異物を付着させ、レ―ザ―表面検査装置
〔日立電子エンジニアリング（株）製のＬＳ−５００
０；シリコンウエハのミラ―面のみ異物数をカウントす
ることができる装置〕を用い、ミラ―面に付着した０．
２μｍ以上の大きさの異物の数をカウントした。なお、
ウエハの表裏に付着する異物をカウントするため、ミラ
―面を表裏逆にした２通りの場合について同様の検査を
行つた。Next, a 5-inch silicon wafer (mirror wafer without a circuit pattern) having no foreign matter having a size of 0.2 μm or more is passed through a predetermined step (ion implantation processing step) to remove the foreign matter. A laser surface inspection device [LS-500 manufactured by Hitachi Electronics Engineering Co., Ltd.]
0: a device capable of counting the number of foreign substances only on the mirror surface of the silicon wafer].
The number of foreign substances having a size of 2 μm or more was counted. In addition,
In order to count foreign substances adhering to the front and back of the wafer, the same inspection was performed for two cases where the mirror surface was turned upside down.
【００３０】異物洗浄試験として、上記のように異物を
付着させたシリコンウエハのミラ―面に、前記の方法で
作製した粘着テ―プを、ハンドロ―ラを用いて貼り付
け、３分間放置したのち、粘着テ―プを剥離操作して、
洗浄した。この洗浄後、再びレ―ザ―表面検査装置を用
いて、ミラ―面に付着している０．２μｍ以上の大きさ
の異物の数をカウントした。この貼り付けおよび剥離操
作による洗浄後の異物数と、洗浄前の異物数とから、異
物除去率を算出した。As a foreign substance cleaning test, the adhesive tape prepared by the above-described method was attached to the mirror surface of the silicon wafer to which the foreign substance was adhered as described above using a hand roller and left for 3 minutes. After that, peel off the adhesive tape,
Washed. After this cleaning, the number of foreign substances having a size of 0.2 μm or more adhering to the mirror surface was counted again using a laser surface inspection apparatus. The foreign substance removal rate was calculated from the number of foreign substances after cleaning by the attaching and detaching operations and the number of foreign substances before cleaning.
【００３１】これとは別に、粘着剤による汚染試験とし
て、０．２μｍ以上の大きさの異物が０個である５イン
チシリコンウエハ（回路パタ―ンのないミラ―ウエハ）
のミラ―面に、前記の方法で作製した粘着テ―プを、ハ
ンドロ―ラを用いて貼り付け、３分間放置したのち、粘
着テ―プを剥離操作した。この操作後、レ―ザ―表面検
査装置を用いて、ミラ―面に付着している０．２μｍ以
上の大きさの異物の数をカウントし、粘着剤の付着によ
る汚染状況を調べた。Separately from this, as a contamination test using an adhesive, a 5-inch silicon wafer (a mirror wafer without a circuit pattern) having no foreign matter having a size of 0.2 μm or more was used.
The adhesive tape prepared by the above-mentioned method was attached to the mirror surface of the above by using a hand-roller, allowed to stand for 3 minutes, and then the adhesive tape was peeled off. After this operation, the number of foreign substances having a size of 0.2 μm or more adhering to the mirror surface was counted using a laser surface inspection apparatus, and the state of contamination due to adhesion of the adhesive was examined.
【００３２】なお、上記の異物洗浄試験（異物除去率の
測定）および粘着剤汚染試験（付着異物数の測定）に際
し、一連の作業は、クラス１０のクリ―ンル―ム内（温
度２３℃、湿度６０％）で行つた。これらの試験結果
は、後記の表１（ウエハ表面）および表２（ウエハ裏
面）に示されるとおりであつた。In the above-described foreign substance cleaning test (measurement of foreign substance removal rate) and adhesive contamination test (measurement of the number of adhered foreign substances), a series of operations were performed in a class 10 clean room (at a temperature of 23 ° C., (60% humidity). These test results were as shown in Table 1 (wafer front surface) and Table 2 (wafer back surface) described later.
【００３３】実施例２ 架橋剤として、ポリイソシアネ−ト化合物３部に代え、
エポキシ系化合物０．５部を用いた以外は、実施例１と
同様にして、粘着テ―プを作製した。この粘着テ―プの
粘着剤層のゲル分率は８１％、シリコンウエハ（ミラ―
面）に対する粘着力は、ＪＩＳ Ｚ−０２３７に準じて
測定される１８０度引き剥がし粘着力（常温、剥離速度
３００mm／分）で１２０ｇ／２０mm幅であつた。つぎ
に、この粘着テ―プを用いて、実施例１と同様にして、
異物洗浄試験（異物除去率の測定）および粘着剤汚染試
験（付着異物数の測定）を行つた。これらの試験結果
は、後記の表１および表２に示されるとおりであつた。Example 2 As a crosslinking agent, 3 parts of a polyisocyanate compound was used.
An adhesive tape was prepared in the same manner as in Example 1 except that 0.5 part of the epoxy compound was used. The gel fraction of the adhesive layer of this adhesive tape was 81%, and the silicon wafer (mirror)
The adhesive strength to the surface (surface) was 120 g / 20 mm width as a 180 degree peeling adhesive strength (normal temperature, peeling speed 300 mm / min) measured according to JIS Z-0237. Next, using this adhesive tape, in the same manner as in Example 1,
A foreign substance cleaning test (measurement of the foreign substance removal rate) and an adhesive contamination test (measurement of the number of adhered foreign substances) were performed. These test results were as shown in Tables 1 and 2 below.
【００３４】比較例１ 架橋剤であるポリイソシアネ−ト化合物の使用量を、３
部から１部に変更した以外は、実施例１と同様にして、
粘着テ―プを作製した。この粘着テ―プの粘着剤層のゲ
ル分率は４５％、シリコンウエハ（ミラ―面）に対する
粘着力は、ＪＩＳ Ｚ−０２３７に準じて測定される１
８０度引き剥がし粘着力（常温、剥離速度３００mm／
分）で３２０ｇ／２０mm幅であつた。つぎに、この粘着
テ―プを用いて、実施例１と同様にして、異物洗浄試験
（異物除去率の測定）および粘着剤汚染試験（付着異物
数の測定）を行つた。これらの試験結果は、後記の表１
および表２に示されるとおりであつた。Comparative Example 1 The amount of the polyisocyanate compound used as a crosslinking agent was
Except for changing from one part to one part, in the same manner as in Example 1,
An adhesive tape was produced. The gel fraction of the pressure-sensitive adhesive layer of this pressure-sensitive adhesive tape is 45%, and the pressure-sensitive adhesive strength to a silicon wafer (mirror surface) is measured according to JIS Z-0237.
80 degree peeling adhesive strength (normal temperature, peeling speed 300mm /
Min) and the width was 320 g / 20 mm. Next, using this adhesive tape, a foreign substance cleaning test (measurement of foreign substance removal rate) and an adhesive contamination test (measurement of the number of adhered foreign substances) were performed in the same manner as in Example 1. These test results are shown in Table 1 below.
And as shown in Table 2.
【００３５】比較例２ 架橋剤として、ポリイソシアネ−ト化合物３部に代え、
エポキシ系化合物０．０２部を使用した以外は、実施例
１と同様にして、粘着テ―プを作製した。この粘着テ―
プの粘着剤層のゲル分率は４１％、シリコンウエハ（ミ
ラ―面）に対する粘着力は、ＪＩＳ Ｚ−０２３７に準
じて測定される１８０度引き剥がし粘着力（常温、剥離
速度３００mm／分）で３３０ｇ／２０mm幅であつた。つ
ぎに、この粘着テ―プを用いて、実施例１と同様にし
て、異物洗浄試験（異物除去率の測定）および粘着剤汚
染試験（付着異物数の測定）を行つた。これらの試験結
果は、後記の表１および表２に示されるとおりであつ
た。Comparative Example 2 The cross-linking agent was replaced with 3 parts of a polyisocyanate compound.
An adhesive tape was prepared in the same manner as in Example 1 except that 0.02 parts of the epoxy compound was used. This adhesive tape
The gel fraction of the pressure-sensitive adhesive layer of the tape is 41%, and the adhesion to a silicon wafer (mirror surface) is 180-degree peel adhesion measured at JIS Z-0237 (normal temperature, peeling speed 300 mm / min). With a width of 330 g / 20 mm. Next, using this adhesive tape, a foreign substance cleaning test (measurement of foreign substance removal rate) and an adhesive contamination test (measurement of the number of adhered foreign substances) were performed in the same manner as in Example 1. These test results were as shown in Tables 1 and 2 below.
【００３６】比較例３ 架橋剤であるポリイソシアネ−ト化合物の使用量を、３
部から０．５部に変更した以外は、実施例１と同様にし
て、粘着テ―プを作製した。この粘着テ―プの粘着剤層
のゲル分率は２９％、シリコンウエハ（ミラ―面）に対
する粘着力は、ＪＩＳ Ｚ−０２３７に準じて測定され
る１８０度引き剥がし粘着力（常温、剥離速度３００mm
／分）で６８５ｇ／２０mm幅であつた。つぎに、この粘
着テ―プを用いて、実施例１と同様にして、異物洗浄試
験（異物除去率の測定）および粘着剤汚染試験（付着異
物数の測定）を行つた。これらの試験結果は、後記の表
１および表２に示されるとおりであつた。Comparative Example 3 The amount of the polyisocyanate compound used as a crosslinking agent was
An adhesive tape was prepared in the same manner as in Example 1 except that the amount was changed from 0.5 part to 0.5 part. The gel fraction of the pressure-sensitive adhesive layer of this pressure-sensitive adhesive tape is 29%, and the pressure-sensitive adhesive strength to a silicon wafer (mirror surface) is 180 ° peeling strength (normal temperature, peeling rate) measured according to JIS Z-0237. 300mm
/ Min) at 685 g / 20 mm width. Next, using this adhesive tape, a foreign substance cleaning test (measurement of foreign substance removal rate) and an adhesive contamination test (measurement of the number of adhered foreign substances) were performed in the same manner as in Example 1. These test results were as shown in Tables 1 and 2 below.
【００３７】比較例４ 天然ゴムを主成分とするゴム系粘着剤の溶液を、厚さ５
０μｍのポリエステル支持フイルムのコロナ処理面に塗
布し、１５０℃で５分間加熱架橋処理して、厚さ２０μ
ｍの粘着剤層を有する粘着テ―プを作製した。この粘着
テ―プの粘着剤層のゲル分率は６６％、シリコンウエハ
（ミラ―面）に対する粘着力としては、ＪＩＳ Ｚ−０
２３７に準じて測定される１８０度引き剥がし粘着力
（常温、剥離速度３００mm／分）で３３０ｇ／２０mm幅
であつた。つぎに、この粘着テ―プを用いて、実施例１
と同様にして、異物洗浄試験（異物除去率の測定）およ
び粘着剤汚染試験（付着異物数の測定）を行つた。これ
らの試験結果は、後記の表１および表２に示されるとお
りであつた。Comparative Example 4 A solution of a rubber-based pressure-sensitive adhesive containing a natural rubber as a main component was
0 μm coated on a corona-treated surface of a polyester support film, and heat-crosslinked at 150 ° C. for 5 minutes to form a 20 μm thick film.
A pressure-sensitive adhesive tape having a pressure-sensitive adhesive layer of m was prepared. The gel fraction of the adhesive layer of the adhesive tape is 66%, and the adhesive force to a silicon wafer (mirror surface) is JIS Z-0.
180 degree peeling adhesive strength (normal temperature, peeling speed 300 mm / min) measured according to 237 was 330 g / 20 mm width. Next, using this adhesive tape, the first embodiment was used.
In the same manner as in the above, a foreign substance cleaning test (measurement of the foreign substance removal rate) and an adhesive contamination test (measurement of the number of adhered foreign substances) were performed. These test results were as shown in Tables 1 and 2 below.
【００３８】[0038]
【表１】 [Table 1]
【００３９】[0039]
【表２】 [Table 2]
【００４０】上記の表１，表２の結果から明らかなよう
に、本発明の実施例１，２の粘着テ―プによれば、シリ
コンウエハの表面や裏面に付着した異物を、ウエハの汚
染をきたすことなく、８０％前後の高い除去率で除去で
きることがわかる。また、本発明の実施例１，２の粘着
テ―プによれば、剥離操作に際し、半導体ウエハに割れ
などの損傷をきたさないものであることも確認された。As is clear from the results shown in Tables 1 and 2, according to the adhesive tapes of Examples 1 and 2 of the present invention, foreign substances adhering to the front and back surfaces of the silicon wafer were contaminated by the wafer. It can be seen that the removal can be performed at a high removal rate of about 80% without causing the problem. Further, according to the adhesive tapes of Examples 1 and 2 of the present invention, it was confirmed that the semiconductor wafer did not cause damage such as cracking during the peeling operation.
【００４１】これに対し、比較例１〜３の粘着テ―プで
は、異物除去率が低く、とくに比較例３の粘着テ―プ
は、ゲル分率の低さからくる粘着剤層の凝集力の不足に
より、粘着剤成分がウエハ表面に転写して、異物除去率
がマイナス値となる、つまり付着異物が逆に増加してく
ることがわかる。また、この比較例３の粘着テ―プは、
粘着力が大きすぎるため、剥離操作に際し、ウエハに割
れなどの損傷をきたすものであることも確認された。さ
らに、粘着剤としてゴム系のものを用いた比較例４の粘
着テ―プでは、異物除去率がやや高くなつているが、実
施例１，２の粘着テ―プにはなお及ばないものであるこ
とがわかる。On the other hand, the pressure-sensitive adhesive tapes of Comparative Examples 1 to 3 have a low foreign matter removal rate, and particularly the pressure-sensitive adhesive tape of Comparative Example 3 has a low cohesive strength of the pressure-sensitive adhesive layer due to the low gel fraction. It can be seen that due to the shortage, the adhesive component is transferred to the wafer surface, and the foreign matter removal rate becomes a negative value, that is, the attached foreign matter increases. The adhesive tape of Comparative Example 3 was:
It was also confirmed that the wafer was damaged due to cracking or the like during the peeling operation because the adhesive force was too large. Further, in the pressure-sensitive adhesive tape of Comparative Example 4 using a rubber-based pressure-sensitive adhesive, the foreign matter removal rate was slightly higher, but was still inferior to the pressure-sensitive adhesive tapes of Examples 1 and 2. You can see that there is.
【００４２】なお、上記の実施例１，２および比較例１
〜４で示した洗浄方法を、所定の半導体ウエハの製造工
程に適用し、最終的に得られた半導体デバイスの歩留り
を集計した結果、実施例１，２の方法では、比較例１〜
４の方法と比較して、歩留りが約１３〜４６％高くなる
ことがわかつた。また、実施例１，２および比較例１〜
３の方法では、アルミ配線を施したのちにアルミ配線部
分に腐食などの問題を生じなかつたが、粘着剤としてゴ
ム系のものを用いた比較例４の方法では、アルミ配線部
分に著しい腐食が認められた。The above Examples 1 and 2 and Comparative Example 1
As a result of applying the cleaning methods shown in (1) to (4) to the manufacturing process of a predetermined semiconductor wafer and summing up the yield of semiconductor devices finally obtained, the methods of Examples 1 and 2 show that
It was found that the yield was increased by about 13 to 46% as compared with the method of No. 4. Examples 1 and 2 and Comparative Examples 1 to
In the method of No. 3, no problem such as corrosion occurred on the aluminum wiring portion after the aluminum wiring was provided, but in the method of Comparative Example 4 using a rubber-based adhesive, significant corrosion was observed on the aluminum wiring portion. Admitted.
【図１】本発明の異物除去用粘着テ―プの一例を示す断
面図である。FIG. 1 is a cross-sectional view showing an example of an adhesive tape for removing foreign matter according to the present invention.
１ 粘着テ―プ １１ 支持フイルム １２ 粘着剤層 １３ セパレ―タ DESCRIPTION OF SYMBOLS 1 Adhesive tape 11 Support film 12 Adhesive layer 13 Separator
───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 平６−232108（ＪＰ，Ａ) 特開 平３−66772（ＪＰ，Ａ) 特開 平５−198542（ＪＰ，Ａ) (58)調査した分野(Int.Cl.7，ＤＢ名) H01L 21/304 B08B 7/00 C09J 7/02 C09J 133/04 - 133/10 ────────────────────────────────────────────────── ─── Continuation of the front page (56) References JP-A-6-232108 (JP, A) JP-A-3-66772 (JP, A) JP-A-5-198542 (JP, A) (58) Field (Int.Cl. 7 , DB name) H01L 21/304 B08B 7/00 C09J 7/02 C09J 133/04-133/10
Claims (2)
り、この粘着剤層が、アクリル酸アルキルエステルまた
はメタクリル酸アルキルエステル系ポリマ―を主成分と
し、ゲル分率が５０％以上で、シリコンウエハ（ミラ―
面）に対する１８０度引き剥がし粘着力が５００ｇ以下
／２０mm幅であることを特徴とする半導体ウエハに付着
した異物の除去用粘着テ―プ。A pressure-sensitive adhesive layer is provided on a supporting film, and the pressure-sensitive adhesive layer comprises an alkyl acrylate or an alkyl acrylate.
Has a methacrylic acid alkyl ester-based polymer as the main component, a gel fraction of 50% or more, and a silicon wafer (mirror).
Adhesive tape for removing foreign matter adhering to a semiconductor wafer, wherein the adhesive tape has a 180 ° peeling adhesive strength to a surface (a) of not more than 500 g / 20 mm width.
に、請求項１に記載の粘着テ―プを貼り付けたのち、剥
離操作して、半導体ウエハの表面および／または裏面に
付着する異物を粘着剤層面に吸着させて半導体ウエハか
ら除去することを特徴とする半導体ウエハに付着した異
物の除去方法。2. After the adhesive tape according to claim 1 is attached to the front surface and / or the back surface of the semiconductor wafer, a peeling operation is performed to adhere foreign substances adhering to the front surface and / or the back surface of the semiconductor wafer. A method for removing foreign matter adhering to a semiconductor wafer, wherein the foreign matter is attached to a surface of the agent layer and removed from the semiconductor wafer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24881794A JP3346660B2 (en) | 1994-09-16 | 1994-09-16 | Adhesive tape and method for removing foreign matter adhering to semiconductor wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24881794A JP3346660B2 (en) | 1994-09-16 | 1994-09-16 | Adhesive tape and method for removing foreign matter adhering to semiconductor wafer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0888205A JPH0888205A (en) | 1996-04-02 |
| JP3346660B2 true JP3346660B2 (en) | 2002-11-18 |
Family
ID=17183858
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP24881794A Expired - Lifetime JP3346660B2 (en) | 1994-09-16 | 1994-09-16 | Adhesive tape and method for removing foreign matter adhering to semiconductor wafer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3346660B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7877835B2 (en) | 2007-07-17 | 2011-02-01 | Fujifilm Corporation | Method and apparatus for cleaning master disk |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4653977B2 (en) * | 2004-07-14 | 2011-03-16 | 株式会社共和 | Foreign matter removing pressure-sensitive adhesive sheet for precision electronic component and component processing apparatus, and method for removing foreign matter adhered to precision electronic component and component processing apparatus using the sheet |
| JP4809874B2 (en) * | 2008-07-22 | 2011-11-09 | 古河電気工業株式会社 | Manufacturing method of semiconductor chip |
-
1994
- 1994-09-16 JP JP24881794A patent/JP3346660B2/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7877835B2 (en) | 2007-07-17 | 2011-02-01 | Fujifilm Corporation | Method and apparatus for cleaning master disk |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0888205A (en) | 1996-04-02 |
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