JPH10190066A - Light emitting diode and led display using the same - Google Patents

Light emitting diode and led display using the same

Info

Publication number
JPH10190066A
JPH10190066A JP35025496A JP35025496A JPH10190066A JP H10190066 A JPH10190066 A JP H10190066A JP 35025496 A JP35025496 A JP 35025496A JP 35025496 A JP35025496 A JP 35025496A JP H10190066 A JPH10190066 A JP H10190066A
Authority
JP
Japan
Prior art keywords
light emitting
light
emitting diode
led chip
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP35025496A
Other languages
Japanese (ja)
Inventor
Yoshinori Shimizu
義則 清水
Motokazu Yamada
元量 山田
Akimasa Sakano
顕正 阪野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nichia Chemical Industries Ltd
Original Assignee
Nichia Chemical Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nichia Chemical Industries Ltd filed Critical Nichia Chemical Industries Ltd
Priority to JP35025496A priority Critical patent/JPH10190066A/en
Publication of JPH10190066A publication Critical patent/JPH10190066A/en
Priority to JP2000267852A priority patent/JP3729047B2/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/32257—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic the layer connector connecting to a bonding area disposed in a recess of the surface of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H01L33/486—Containers adapted for surface mounting

Abstract

PROBLEM TO BE SOLVED: To obtain a light emitting diode of higher luminance wherein light emitting efficiency lowers little in a long time of use by providing an LED chip wherein a nitride compound semiconductor is provided to one side of a light transmitting board and providing a reflecting member to the other side. SOLUTION: An LED chip 203 is subjected to die bond on an electrode provided inside a ceramic package by using a die bond member 207, and is electrically connected thereto. In the LED chip 203 to be used, a nitride compound semiconductor which can emit blue light is formed in one side of an SiC board. A reflecting member 201 is provided not to directly cast light emitted from a semiconductor light emitting layer to die bond resin 207 and to reflect it to a light emission observation surface effectively. Especially, a reflection member wherein a dielectric material is used can reflect light emitting wavelength from a light emitting layer of a nitride compound semiconductor effectively and it is further desirable since it can be formed readily.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【０００１】[0001]

【産業上の利用分野】本願発明は、ディスプレイのバッ
クライト、照光式操作スイッチ、ＬＥＤ表示器等に使用
される発光ダイオードに係り、特に蛍光物質を利用し長
期間且つ、高輝度に発光可能な発光ダイオードに関す
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a light-emitting diode used for a backlight of a display, an illuminated operation switch, an LED display, and the like. It relates to a light emitting diode.

【０００２】[0002]

【従来の技術】発光素子（以下、ＬＥＤチップともい
う。）は、小型で効率よく鮮やかな色の発光をする。ま
た、半導体素子であるため球切れがない。初期駆動特性
が優れ、振動やON/OFF点灯の繰り返しに強いという特徴
を有する。そのため、各種インジケータや種々の光源と
して利用されている。しかしながら、ＬＥＤチップは単
色性の発光ピークを有するが故に白色系などの発光のみ
を得る場合においても、２種類以上の発光素子を利用せ
ざるを得なかった。2. Description of the Related Art Light-emitting elements (hereinafter, also referred to as LED chips) are small and efficiently emit bright colors. In addition, the ball is not broken because it is a semiconductor element. It has excellent initial drive characteristics and is resistant to vibration and ON / OFF lighting. Therefore, it is used as various indicators and various light sources. However, since the LED chip has a monochromatic emission peak, two or more types of light-emitting elements have to be used even in the case of obtaining only white light or the like.

【０００３】そこで、本出願人は、単色性の発光ピーク
を有するＬＥＤチップと蛍光物質を利用して白色系など
種々の発光色を発光させる発光ダイオードとして特開平
５−１５２６０９号公報、特開平７−９９３４５号公報
などに記載した発光ダイオードを開発した。Accordingly, the present applicant has disclosed a light emitting diode which emits various luminescent colors such as a white light using an LED chip having a monochromatic emission peak and a fluorescent substance. A light emitting diode described in -99345 and the like has been developed.

【０００４】これらの発光ダイオードは、発光層のエネ
ルギーバンドギャップが比較的大きいＬＥＤチップをリ
ードフレームの先端に設けられたカップ上などにダイボ
ンド部材などによって配置する。ＬＥＤチップは、ＬＥ
Ｄチップが設けられたメタルステムやメタルポストとそ
れぞれ電気的に接続させる。そして、ＬＥＤチップを被
覆する樹脂モールド中などにＬＥＤチップからの光を吸
収し、波長変換する蛍光体を含有させ色変換部材として
形成させてある。In these light emitting diodes, an LED chip having a relatively large energy band gap of a light emitting layer is arranged by a die bonding member or the like on a cup provided at the tip of a lead frame. LED chip is LE
It is electrically connected to a metal stem or a metal post provided with a D chip. Then, a phosphor that absorbs light from the LED chip and converts the wavelength is contained in a resin mold or the like that covers the LED chip to form a color conversion member.

【０００５】これによって、ＬＥＤチップからの発光を
蛍光体によって波長変換した発光ダイオードとすること
ができる。例えば、青色系のＬＥＤチップからの光と、
その光を吸収し補色関係にある黄色系を発光する蛍光体
からの光と、の混色により白色系が発光可能な発光ダイ
オードとすることができる。これらの発光ダイオード
は、白色系を発光する発光ダイオードとして利用した場
合においても十分な輝度を発光する発光ダイオードとす
ることができる。[0005] Thus, a light-emitting diode in which light emission from the LED chip is wavelength-converted by the phosphor can be obtained. For example, light from a blue LED chip,
A light emitting diode capable of emitting a white light by mixing the light from a phosphor that emits a yellow light having a complementary color relationship by absorbing the light can be obtained. These light emitting diodes can emit light with sufficient luminance even when used as light emitting diodes that emit white light.

【０００６】[0006]

【発明が解決しようとする課題】しかし、発光ダイオー
ドの利用分野の広がりと共に、より信頼性が高く長期間
且つ、高輝度に発光可能な発光ダイオードが求められて
いる。特に、蛍光物質を利用した発光ダイオードは、蛍
光物質にもよるが発光層からの発光波長が短いものほど
効率よく発光する傾向にある。一方、発光ダイオードに
利用するモールド部材、色変換部材やダイボンド部材な
どには、扱い易さなどから種々の合成樹脂が利用されて
いる。合成樹脂は、一般にＬＥＤチップから放出される
発光波長が短くなると劣化し着色する傾向にある。特
に、ダイボンド部材は、接着性をも考慮しなければ成ら
ず現在のところ耐侯性と密着性等を共に十分満足するも
のがない。したがって、蛍光物質を利用した発光ダイオ
ードの発光強度を更に向上させ長時間使用すると、発光
ダイオードの発光輝度が低下する場合があるという問題
を有する。本願発明は上記課題を解決し、より高輝度且
つ、長時間の使用環境下においても発光光率の低下が極
めて少ない発光ダイオードを提供することを目的とす
る。However, as the field of use of light-emitting diodes has expanded, there has been a demand for light-emitting diodes that can emit light with high reliability and for a long time and with high luminance. In particular, a light emitting diode using a fluorescent substance tends to emit light more efficiently as the emission wavelength from the light emitting layer is shorter, depending on the fluorescent substance. On the other hand, various synthetic resins are used for a mold member, a color conversion member, a die bond member, and the like used for a light emitting diode because of ease of handling. Synthetic resins generally tend to deteriorate and become colored as the emission wavelength emitted from the LED chip becomes shorter. In particular, there is no die-bonding member that sufficiently satisfies both weather resistance and adhesion at the present time because adhesion must be considered. Therefore, there is a problem in that the light emission intensity of the light emitting diode may be reduced when the light emitting diode using the fluorescent material is further enhanced and used for a long time. An object of the present invention is to solve the above-mentioned problems and to provide a light-emitting diode with higher luminance and with a very small decrease in luminous efficiency even under a long-time use environment.

【０００７】[0007]

【課題を解決するための手段】本願発明は、基板上にダ
イボンド部材によって固定されたＬＥＤチップと、該Ｌ
ＥＤチップからの発光の少なくとも一部を吸収し波長変
換して発光する蛍光物質を含む色変換部材と、を有する
発光ダイオードであって、前記ＬＥＤチップは透光性基
体上の一方の面側に窒化物系化合物半導体を有すると共
に、前記透光性基体の他方の面側に反射部材を設けた発
光ダイオードとすることにより上述の問題点を解決する
ことができる。また、前記ダイボンド部材がエポキシ樹
脂、シリコーン樹脂から選択される少なくとも１種の発
光ダイオードであり、前記色変換部材は基材中に蛍光物
質が含有されている発光ダイオードでもある。さらに、
前記基材がエラストマー或いはゲル状シリコーン樹脂、
アモルファスフッ素樹脂、ポリイミド樹脂から選択され
る少なくとも１種の発光ダイオードである。According to the present invention, there is provided an LED chip fixed on a substrate by a die bonding member;
A color conversion member containing a fluorescent substance that absorbs at least a portion of light emitted from the ED chip and converts the wavelength to emit light, wherein the LED chip is provided on one surface side of the light-transmitting substrate. The above-mentioned problem can be solved by using a light emitting diode having a nitride-based compound semiconductor and a reflective member provided on the other surface side of the light-transmitting substrate. Further, the die bonding member is at least one type of light emitting diode selected from an epoxy resin and a silicone resin, and the color conversion member is a light emitting diode in which a base material contains a fluorescent substance. further,
The base material is an elastomer or a gel-like silicone resin,
It is at least one kind of light emitting diode selected from amorphous fluorine resin and polyimide resin.

【０００８】また、本願発明の発光ダイオードをマトリ
ックス状に配置したＬＥＤ表示器と、該ＬＥＤ表示器と
電気的に接続させた駆動回路と、を有するＬＥＤ表示装
置である。Further, the present invention is an LED display device having an LED display in which the light emitting diodes of the present invention are arranged in a matrix, and a drive circuit electrically connected to the LED display.

【０００９】[0009]

【作用】本願発明は、ＬＥＤチップの透光性基体に反射
部材を設けることによって、ダイボンド部材の光による
劣化を防止しつつ光利用効率を高めたものである。特
に、発光ダイオードの光反射性と、接着剤の接着性と、
に機能分離させたものである。According to the present invention, a light-transmissive substrate of an LED chip is provided with a reflective member to prevent the die-bond member from being deteriorated by light and to improve the light use efficiency. In particular, the light reflectivity of the light emitting diode, the adhesiveness of the adhesive,
The functions are separated.

【００１０】また、より耐光性の高い基材を用いて色変
換部材を構成させることにより、ＬＥＤチップからの
光、蛍光物質によって反射された光などによる着色など
を抑制し発光光率の低下を防ぐことができる。[0010] Further, by forming a color conversion member using a substrate having higher light resistance, coloring by light from an LED chip, light reflected by a fluorescent substance, and the like can be suppressed, and a decrease in luminous efficiency can be reduced. Can be prevented.

【００１１】[0011]

【発明の実施の形態】本願発明者は種々の実験の結果、
高輝度且つ長時間の使用環境下における発光ダイオード
の出力低下が、ＬＥＤチップのごく近傍に配置された色
変換部材やダイボンド部材の劣化にあることを見出し本
願発明を成すに至った。BEST MODE FOR CARRYING OUT THE INVENTION The present inventor has conducted various experiments,
The inventors of the present invention have found out that a decrease in the output of the light-emitting diode in a high-luminance and long-time use environment is caused by deterioration of a color conversion member and a die-bonding member disposed very close to the LED chip.

【００１２】蛍光物質を利用した発光ダイオードにおい
ては、蛍光物質を利用しない通常の発光ダイオードと光
の密度が極端に異なる。即ち、図３の如く蛍光物質を利
用した発光ダイオードにおいては、ＬＥＤチップ３０３
から放出される光がそのまま全て合成樹脂などにより形
成された色変換部材などを透過しない。ＬＥＤチップ３
０３からの光は、ＬＥＤチップ３０３近傍などに設けら
れた蛍光物質３２２によって反射される。或いは、蛍光
物質３２２によって励起された光として等方的に放出さ
れる。さらに、発光ダイオードからの光はダイボンド樹
脂を透過し、光特性向上のために高反射率の材料が用い
られた基板などによって反射される。また、ダイボンド
部材などの屈折率の差などによっても反射される。その
ため、ＬＥＤチップ３０３近傍に光が部分的に密に閉じ
こめられ、ＬＥＤチップ近傍の光密度が極めて高くな
る。そのため、ＬＥＤチップ３０３極近傍の色変換部材
やダイボンド部材が、特に劣化され着色３３０などし発
光光率が低下すると考えられる。The light density of a light emitting diode using a fluorescent substance is extremely different from that of a normal light emitting diode not using a fluorescent substance. That is, in a light emitting diode using a fluorescent substance as shown in FIG.
All the light emitted from the device does not pass through a color conversion member or the like formed of a synthetic resin or the like as it is. LED chip 3
Light from 03 is reflected by a fluorescent substance 322 provided near the LED chip 303 or the like. Alternatively, the light is emitted isotropically as light excited by the fluorescent substance 322. Further, light from the light emitting diode passes through the die bond resin, and is reflected by a substrate or the like using a material having a high reflectance for improving optical characteristics. The light is also reflected by a difference in refractive index of a die bond member or the like. Therefore, light is partially and densely confined in the vicinity of the LED chip 303, and the light density in the vicinity of the LED chip becomes extremely high. For this reason, it is considered that the color conversion member and the die bonding member in the vicinity of the LED chip 303 are particularly deteriorated and colored 330, and the light emission rate is reduced.

【００１３】本願発明は、ＬＥＤチップ極近傍の色変換
部材やダイボンド部材などの劣化を抑制することによ
り、高輝度且つ長時間の使用環境下においても出力低下
が極めて少ない発光ダイオードとすることができるので
ある。The present invention suppresses deterioration of the color conversion member and the die bonding member in the vicinity of the LED chip, thereby making it possible to obtain a light emitting diode with a high luminance and a very small decrease in output even under a long-time use environment. It is.

【００１４】本願発明の具体的な発光ダイオードの一例
を図２に示す。図２は、チップタイプＬＥＤの断面図で
ある。セラミックのパッケージ内に設けられた電極上に
ダイボンド部材２０７を用いてＬＥＤチップをダイボン
ドさせると共に電気的に接続させた。ＬＥＤチップに
は、ＳｉＣ基板の一方に青色系が発光可能な窒化物系化
合物半導体が形成されたものを利用した。なお、ＳｉＣ
基板の他方の面上には、Ａｇがメッキされている。ま
た、ダイボンド部材２０１には、Ａｇ含有のシリコーン
樹脂を用いた。残ったＬＥＤチップ２０３の電極とパッ
ケージに設けられた外部電極２０９とを金線によってワ
イヤーボンディングさせてある。FIG. 2 shows an example of a specific light emitting diode of the present invention. FIG. 2 is a sectional view of the chip type LED. The LED chip was die-bonded using the die-bonding member 207 on the electrode provided in the ceramic package, and was electrically connected. As the LED chip, a SiC substrate formed with a nitride-based compound semiconductor capable of emitting blue light on one side was used. Note that SiC
Ag is plated on the other surface of the substrate. Further, for the die bond member 201, an Ag-containing silicone resin was used. The remaining electrodes of the LED chip 203 and the external electrodes 209 provided on the package are wire-bonded with gold wires.

【００１５】パッケージ２０４には、内部に一段下がっ
たキャビティーを設けてある。キャビティー内には、蛍
光物質を含有させた透光性ポリイミド樹脂を色変換部材
２０２として注入し発光ダイオードを構成させてある。
蛍光物質は、セリウムを付活したイットリウム・アルミ
ニウム・ガーネット蛍光体を用いた。The package 204 is provided with a cavity one step lower inside. Into the cavity, a light-transmitting polyimide resin containing a fluorescent substance is injected as a color conversion member 202 to constitute a light emitting diode.
As the fluorescent substance, a yttrium aluminum garnet phosphor activated with cerium was used.

【００１６】このような、発光ダイオードの外部電極２
０９に電力を供給させることによりＬＥＤチップ２０３
から光を出させると共にＬＥＤチップ２０３からの光に
よって蛍光物質を励起させ発光させることができる。Ｌ
ＥＤチップ２０３からの青色系光と蛍光物質からの黄色
系光が補色関係にあるため、白色系の発光色を得ること
ができる。このような発光ダイオードは樹脂劣化などに
伴う着色が少ないため長期間且つ高輝度に発光させるこ
とができる。以下本願発明の構成部材について詳述す
る。Such an external electrode 2 of the light emitting diode
09 to supply power to the LED chip 203.
And emits light by exciting the fluorescent substance with the light from the LED chip 203. L
Since the blue light from the ED chip 203 and the yellow light from the fluorescent substance have a complementary color relationship, a white light emission color can be obtained. Such a light emitting diode can emit light for a long period of time and with high luminance because there is little coloring due to resin deterioration or the like. Hereinafter, the constituent members of the present invention will be described in detail.

【００１７】（反射部材２０１）本願発明に用いられる
反射部材２０１とは、半導体発光層から放出された光を
ダイボンド樹脂に直接照射させないように設けられると
共に、効率よく発光観測面側に反射させるためのもので
ある。(Reflection member 201) The reflection member 201 used in the present invention is provided so as not to directly irradiate the light emitted from the semiconductor light emitting layer to the die bond resin and efficiently reflects the light to the light emission observation surface side. belongs to.

【００１８】このような反射部材は、Ｉｎ、Ｃｕ、Ｉ
ｒ、Ｐｄ、Ｒｈ、Ｗ、Ｍｏ、Ｔｉ、Ｎｉ、Ａｌ、Ａｇや
Ｐｔなどの金属や合金、ＴｉＯ2、ＳｉＯ2、ＢａＦ2等
の誘電体材料を積層した誘電体多層膜で形成することが
できる。特に、Ａｌ、Ａｇ、ＰｔやＴｉＯ2、ＳｉＯ2、
ＢａＦ2等の誘電体材料を利用した反射部材は、窒化物
系化合物半導体の発光層から放出される発光波長を効率
よく反射できると共に比較的簡単に形成できるためより
好ましい。このような反射部材は、蒸着法、スパッタリ
ング法などの気相成長膜技術などにより透光性基体上に
容易に形成することができる。Such a reflection member is made of In, Cu, I
r, Pd, Rh, W, Mo, Ti, Ni, Al, a metal or alloy such as Ag or Pt, or a dielectric multilayer film in which a dielectric material such as TiO 2 , SiO 2 or BaF 2 is laminated. it can. In particular, Al, Ag, Pt, TiO 2 , SiO 2 ,
A reflecting member using a dielectric material such as BaF 2 is more preferable because it can efficiently reflect the emission wavelength emitted from the light emitting layer of the nitride-based compound semiconductor and can be formed relatively easily. Such a reflecting member can be easily formed on a light-transmitting substrate by a vapor deposition method such as a vapor deposition method or a sputtering method.

【００１９】（ダイボンド部材１０７、２０７、３０
７）本願発明に用いられるダイボンド部材１０７とは、
ＬＥＤチップ１０３と、基板１０４とを接着させるため
に用いられる。したがって、ダイボンド部材１０７は、
基板及びＬＥＤチップ１０３との密着性が高いことが望
まれる。ダイボンド部材に用いられる具体的な合成樹脂
としては、一液、二液型エポキシ樹脂や一液、二液型シ
リコーン樹脂が好適に用いられる。(Die bond members 107, 207, 30
7) The die bond member 107 used in the present invention is
It is used for bonding the LED chip 103 and the substrate 104. Therefore, the die bonding member 107
It is desired that the adhesion between the substrate and the LED chip 103 be high. As a specific synthetic resin used for the die bonding member, a one-part or two-part type epoxy resin or a one-part or two-part type silicone resin is suitably used.

【００２０】また、ダイボンド部材１０７を利用してＬ
ＥＤチップと基板とを電気的に導通させてもよい。この
場合、ダイボンド部材中に、銀、金、アルミニウム、
銅、ＩＴＯ、ＳｎＯ2、ＺｎＯ2などから選択される少な
くとも１種を含有させることが好ましい。特に、銀、
金、アルミニウム、銅などは、導電性を持たせると共に
放熱性を向上させることができる。[0020] Further, using the die bonding member 107, L
The ED chip and the substrate may be electrically connected. In this case, silver, gold, aluminum,
It is preferable to contain at least one selected from copper, ITO, SnO 2 , ZnO 2 and the like. In particular, silver,
Gold, aluminum, copper, and the like can provide conductivity and improve heat dissipation.

【００２１】このようなダイボンド部材１０７は、ＬＥ
Ｄチップ１０３と基板１０４とを接着させるためにダイ
ボンダーを用いることによって簡単に塗布などすること
ができる。Such a die bond member 107 is made of LE
By using a die bonder to bond the D chip 103 and the substrate 104, the application can be easily performed.

【００２２】（色変換部材１０２、２０２）本願発明に
用いられる色変換部材１０２とは、ＬＥＤチップ１０３
からの光の少なくとも一部を変換する蛍光物質３２２が
含有されるものである。色変換部材１０２の基材として
は、ＬＥＤチップ１０３からの光や蛍光物質からの光を
効率よく透過させると共に耐光性の良いものが好まし
い。さらに、色変換部材として働くと共にモールド材な
どとして兼用させる場合は、外部環境下における外力や
水分等に対して強いものが好ましい。このような基材３
２１の具体的材料としては、エラストマー状或いはゲル
状シリコーン樹脂、アモルファスフッ素樹脂、透光性ポ
リイミド樹脂などの耐候性に優れた透明樹脂や硝子など
が好適に用いられる。色変換部材１０２の量によって発
光ダイオードから放出される光の色調などが変化するた
め操作性などの点からエラストマー状或いはゲル状シリ
コーン樹脂がより好ましい。(Color conversion member 102, 202) The color conversion member 102 used in the present invention is an LED chip 103.
And a fluorescent substance 322 that converts at least a part of light from the light source. As the base material of the color conversion member 102, a material that efficiently transmits light from the LED chip 103 and light from a fluorescent substance and has good light resistance is preferable. Further, in the case where it functions as a color conversion member and is also used as a molding material, a material that is strong against external force, moisture, and the like under an external environment is preferable. Such a base material 3
As a specific material of 21, a transparent resin having excellent weather resistance such as an elastomeric or gel-like silicone resin, an amorphous fluororesin, a translucent polyimide resin, glass, or the like is suitably used. Since the color tone of light emitted from the light emitting diode changes depending on the amount of the color conversion member 102, an elastomeric or gel silicone resin is more preferable in terms of operability and the like.

【００２３】色変換部材は、ＬＥＤチップ１０３に直接
接触させて被覆させることもできるし、他の合成樹脂な
どを間に介して設けることもできる。また、蛍光物質３
２２と共に着色顔料、着色染料や拡散剤を含有させても
良い。着色顔料や着色染料を用いることによって色味を
調節させることもできる。拡散剤を含有させることによ
ってより指向角を増すこともできる。具体的な拡散剤と
しては、無機系であるチタン酸バリウム、酸化チタン、
酸化アルミニウム、酸化珪素等や有機系であるグアナミ
ン樹脂などが好適に用いられる。The color conversion member can be covered by directly contacting the LED chip 103, or can be provided with another synthetic resin or the like interposed therebetween. Also, the fluorescent substance 3
A coloring pigment, a coloring dye and a diffusing agent may be contained together with 22. The color can also be adjusted by using a coloring pigment or coloring dye. Inclusion of a diffusing agent can further increase the directivity angle. Specific diffusing agents include inorganic barium titanate, titanium oxide,
Aluminum oxide, silicon oxide, or the like, or an organic guanamine resin is preferably used.

【００２４】（蛍光物質３２２）本願発明に用いられる
蛍光物質３２２は、窒化物系化合物半導体から放出され
た可視光や紫外光を他の発光波長に変換するためのもの
である。従って、ＬＥＤチップ１０３に用いられる発光
層から発光される発光波長や発光ダイオードから放出さ
れる所望の発光波長に応じて種々ものが用いられる。特
に、ＬＥＤチップ１０３が発光した光と、ＬＥＤチップ
１０３からの光によって励起され発光する蛍光物質３２
２からの光が補色関係にあるとき白色系光を発光させる
こともできる。(Fluorescent substance 322) The fluorescent substance 322 used in the present invention is for converting visible light or ultraviolet light emitted from the nitride-based compound semiconductor into another emission wavelength. Therefore, various types are used depending on the emission wavelength emitted from the emission layer used in the LED chip 103 and the desired emission wavelength emitted from the light emitting diode. In particular, the light emitted from the LED chip 103 and the fluorescent substance 32 that emits light when excited by the light from the LED chip 103
White light can also be emitted when the light from 2 has a complementary color relationship.

【００２５】このような蛍光物質３２２として、セリウ
ムで付活されたイットリウム・アルミニウム・ガーネッ
ト系蛍光物質、ペリレン系誘導体や銅、アルミニウムで
付活された硫化亜鉛カドミウムやマンガンで付活された
酸化マグネシュウム・チタンなど種々のものが挙げられ
る。これらの蛍光物質は、１種類で用いてもよいし、２
種類以上混合して用いてもよい。As such a fluorescent substance 322, a yttrium-aluminum-garnet-based fluorescent substance activated with cerium, a perylene-based derivative, zinc cadmium sulfide activated with copper or aluminum, and magnesium oxide activated with manganese are used. -Various things, such as titanium, are mentioned. These fluorescent materials may be used alone,
You may mix and use more than one type.

【００２６】特に、セリウムで付活されたイットリウム
・アルミニウム・ガーネット系蛍光物質は、ガーネット
構造であるため、熱、光及び水に強く、励起スペクトル
のピークが４５０ｎｍ付近にさせることができる。ま
た、発光ピークも５３０ｎｍ付近などにあり、７００ｎ
ｍまで裾を引くブロードな発光スペクトルを持たせるこ
とができる。しかも、組成のＡｌの一部をＧａで置換す
ることで発光波長が短波長側にシフトし、また組成のＹ
の一部をＧｄで置換することで、発光波長が長波長側へ
シフトさせることができる。このように組成を変化させ
ることで連続的に種々の発光波長とすることができるた
め本願発明の蛍光物質として特に好ましい。In particular, the yttrium-aluminum-garnet-based fluorescent material activated with cerium has a garnet structure, so it is resistant to heat, light and water, and can have a peak of an excitation spectrum near 450 nm. Also, the emission peak is around 530 nm and the like.
It can have a broad emission spectrum with a tail extending to m. Moreover, by substituting a part of the Al in the composition with Ga, the emission wavelength shifts to the short wavelength side, and the Y in the composition
Can be shifted to the longer wavelength side by substituting a part of Gd with Gd. Since the emission wavelength can be continuously changed by changing the composition in this way, the phosphor is particularly preferable as the fluorescent substance of the present invention.

【００２７】なお、所望に応じて発光波長を長波長や短
波長側に調節させるため、イットリウムの一部をＬｕ、
Ｓｃ、Ｌａに置換させることもできるし、アルミニウム
の一部をＩｎ、Ｂ、Ｔｌに置換させることもできる。さ
らに、セリウムに加えて、ＴｂやＣｒを微量含有させ吸
収波長を調整させることもできる。In order to adjust the emission wavelength to a longer wavelength or a shorter wavelength as required, part of yttrium is changed to Lu,
Sc or La can be substituted, or part of aluminum can be substituted with In, B, or Tl. Further, in addition to cerium, a small amount of Tb or Cr may be contained to adjust the absorption wavelength.

【００２８】セリウムで付活されたイットリウム・アル
ミニウム・ガーネット系蛍光物質を用いた場合は、ＬＥ
Ｄチップ１０３と接する或いは近接して配置された放射
照度として（Ｅｅ）＝３Ｗ・ｃｍ-2以上１０Ｗ・ｃｍ-2
以下の高照射強度においても高効率に十分な耐光性を有
する発光ダイオードを構成することができる。When a yttrium / aluminum / garnet-based fluorescent material activated with cerium is used, LE is used.
(Ee) = 3 W · cm −2 or more and 10 W · cm −2 as irradiance arranged in contact with or close to the D chip 103
Even at the following high irradiation intensity, a light emitting diode having sufficient light resistance can be constituted with high efficiency.

【００２９】（ＬＥＤチップ１０３、２０３）本願発明
に用いられるＬＥＤチップ１０３とは、種々の蛍光物質
３２２を効率良く励起できる比較的バンドエネルギーが
高い半導体発光素子が好適に挙げられる。このような半
導体発光素子としては、ＭＯＣＶＤ法等により形成され
た窒化物系化合物半導体が用いられる。窒化物系化合物
半導体は、ＩｎnＡｌmＧａ1-n- mＮ（但し、０≦ｎ、０
≦ｍ、ｎ＋ｍ≦１）を発光層とし形成させてある。半導
体の構造としては、ＭＩＳ接合、ＰＩＮ接合やＰＮ接合
などを有するホモ構造、ヘテロ構造あるいはダブルへテ
ロ構成のものが挙げられる。半導体層の材料やその混晶
度によって発光波長を種々選択することができる。ま
た、半導体活性層を量子効果が生ずる薄膜に形成させた
単一量子井戸構造や多重量子井戸構造とすることもでき
る。(LED Chips 103 and 203) As the LED chip 103 used in the present invention, a semiconductor light emitting device having a relatively high band energy capable of efficiently exciting various fluorescent substances 322 is preferably exemplified. As such a semiconductor light emitting device, a nitride compound semiconductor formed by an MOCVD method or the like is used. The nitride-based compound semiconductor is In n Al m Ga 1-n- m N (where 0 ≦ n, 0
≦ m, n + m ≦ 1) is formed as a light emitting layer. Examples of the semiconductor structure include a homostructure having a MIS junction, a PIN junction, and a PN junction, a heterostructure, and a double heterostructure. Various emission wavelengths can be selected depending on the material of the semiconductor layer and the degree of mixed crystal thereof. Also, a single quantum well structure or a multiple quantum well structure in which the semiconductor active layer is formed as a thin film in which a quantum effect occurs can be used.

【００３０】窒化物系化合物半導体を形成させる基板に
はサファイヤ、スピネル、ＳｉＣ、Ｓｉ、ＺｎＯ、窒化
ガリウム系単結晶等の材料を用いることができる。結晶
性の良い窒化ガリウム系半導体を形成させるためにはサ
ファイヤ基板を用いることが好ましく、サファイヤ基板
との格子不整合を是正するためにバッファー層を形成す
ることが望ましい。バッファー層は、低温で形成させた
窒化アルミニウムや窒化ガリウムなどで形成させること
ができる。The substrate on which the nitride-based compound semiconductor is formed can be made of a material such as sapphire, spinel, SiC, Si, ZnO, or a gallium nitride-based single crystal. A sapphire substrate is preferably used to form a gallium nitride-based semiconductor with good crystallinity, and a buffer layer is preferably formed to correct lattice mismatch with the sapphire substrate. The buffer layer can be formed of aluminum nitride, gallium nitride, or the like formed at a low temperature.

【００３１】窒化物系化合物半導体を使用したＰＮ接合
を有する発光素子例としては、バッファー層上に、Ｎ型
窒化ガリウムで形成した第１のコンタクト層、Ｎ型窒化
アルミニウム・ガリウムで形成させた第１のクラッド
層、窒化インジウム・ガリウムで形成した活性層、Ｐ型
窒化アルミニウム・ガリウムで形成した第２のクラッド
層、Ｐ型窒化ガリウムで形成した第２のコンタクト層を
順に積層させた構成などとすることができる。As an example of a light emitting device having a PN junction using a nitride-based compound semiconductor, a first contact layer formed of N-type gallium nitride and a first contact layer formed of N-type aluminum gallium nitride on a buffer layer A first cladding layer, an active layer formed of indium gallium nitride, a second cladding layer formed of P-type aluminum gallium nitride, and a second contact layer formed of P-type gallium nitride. can do.

【００３２】なお、窒化物系化合物半導体は、不純物を
ドープしない状態でＮ型導電性を示す。発光効率を向上
させるなど所望のＮ型窒化ガリウム半導体を形成させる
場合は、Ｎ型ドーパントとしてＳｉ、Ｇｅ、Ｓｅ、Ｔ
ｅ、Ｃ等を適宜導入することが好ましい。一方、Ｐ型窒
化ガリウム半導体を形成させる場合は、Ｐ型ドーパンド
であるＺｎ、Ｍｇ、Ｂｅ、Ｃａ、Ｓｒ、Ｂａ等をドープ
させる。窒化ガリウム系化合物半導体は、Ｐ型ドーパン
トをドープしただけではＰ型化しにくいためＰ型ドーパ
ント導入後に、炉による加熱、低速電子線照射やプラズ
マ照射等によりアニールすることでＰ型化させることが
好ましい。The nitride-based compound semiconductor shows N-type conductivity without doping impurities. When a desired N-type gallium nitride semiconductor is formed, for example, to improve luminous efficiency, Si, Ge, Se, T
It is preferable to appropriately introduce e, C, and the like. On the other hand, in the case of forming a P-type gallium nitride semiconductor, P-type dopants such as Zn, Mg, Be, Ca, Sr, and Ba are doped. The gallium nitride-based compound semiconductor is difficult to be converted into a P-type simply by doping with a P-type dopant, and thus it is preferable to convert the gallium nitride-based compound into a P-type by introducing a P-type dopant and then annealing by heating in a furnace, low-speed electron beam irradiation, plasma irradiation, or the like. .

【００３３】絶縁性基板を用いた半導体発光素子の場合
は、絶縁性基板の一部を除去する、或いは半導体表面側
からＰ型及びＮ型用の電極面をとるためにＰ型半導体及
びＮ型半導体の露出面をエッチングなどによりそれぞれ
形成させる。各半導体層上にスパッタリング法や真空蒸
着法などを用いて所望の形状の各電極を形成させる。発
光面側に設ける電極は、全被覆せずに発光領域を取り囲
むようにパターニングするか、或いは金属薄膜や金属酸
化物などの透明電極を用いることができる。このように
形成された発光素子をそのまま利用することもできる
し、個々に分割したＬＥＤチップとして使用してもよ
い。In the case of a semiconductor light emitting device using an insulating substrate, a P-type semiconductor and an N-type are used to remove a part of the insulating substrate or to obtain P-type and N-type electrode surfaces from the semiconductor surface side. The exposed surface of the semiconductor is formed by etching or the like. Each electrode having a desired shape is formed on each semiconductor layer by using a sputtering method, a vacuum evaporation method, or the like. The electrode provided on the light-emitting surface side may be patterned so as to surround the light-emitting region without being entirely covered, or a transparent electrode such as a metal thin film or a metal oxide may be used. The light emitting element thus formed can be used as it is, or may be used as an individually divided LED chip.

【００３４】個々に分割されたＬＥＤチップとして利用
する場合は、形成された半導体ウエハー等をダイヤモン
ド製の刃先を有するブレードが回転するダイシングソー
により直接フルカットするか、又は刃先幅よりも広い幅
の溝を切り込んだ後（ハーフカット）、外力によって半
導体ウエハーを割る。あるいは、先端のダイヤモンド針
が往復直線運動するスクライバーにより半導体ウエハー
に極めて細いスクライブライン（経線）を例えば碁盤目
状に引いた後、外力によってウエハーを割り半導体ウエ
ハーからチップ状にカットする。このようにしてＬＥＤ
チップを形成させることができる。When used as individually divided LED chips, the formed semiconductor wafer or the like is directly full-cut by a dicing saw in which a blade having a diamond blade is rotated, or a semiconductor wafer having a width larger than the blade width is used. After cutting the groove (half cut), the semiconductor wafer is broken by an external force. Alternatively, an extremely thin scribe line (meridian) is drawn on the semiconductor wafer, for example, in a checkerboard pattern by a scriber in which a diamond needle at the tip reciprocates linearly, and then the wafer is cut by an external force and cut into chips from the semiconductor wafer. In this way LED
Chips can be formed.

【００３５】本願発明の発光ダイオードにおいて樹脂劣
化、白色系など蛍光物質との補色関係等を考慮する場合
は、４００ｎｍ以上５３０ｎｍ以下が好ましく、４２０
ｎｍ以上４９０ｎｍ以下がより好ましい。ＬＥＤチップ
と蛍光物質との効率をそれぞれより向上させるために
は、４３０ｎｍ以上４７５ｎｍ以下がさらに好ましい。In the light-emitting diode of the present invention, when consideration is given to resin degradation, complementary color relationship with a fluorescent substance such as white, etc., the wavelength is preferably 400 nm or more and 530 nm or less.
The thickness is more preferably from 490 nm to 490 nm. In order to further improve the efficiency of the LED chip and the efficiency of the fluorescent substance, respectively, it is more preferably 430 nm or more and 475 nm or less.

【００３６】（基板１０４）本願発明に用いられる基板
１０４とは、ＬＥＤチップ１０３を配置させると共に光
を有効利用するため高反射率を有するものが好ましい。
したがって、ダイボンド部材によって接着させるために
十分な大きさがあればよく、所望に応じて種々の形状や
材料を用いることができる。具体的には、発光ダイオー
ドに用いられるリードフレームやチップタイプＬＥＤの
パッケージなどが好適に用いられる。(Substrate 104) The substrate 104 used in the present invention preferably has a high reflectance in order to dispose the LED chip 103 and effectively use light.
Therefore, it is sufficient that the size is large enough to be bonded by the die bond member, and various shapes and materials can be used as desired. Specifically, a lead frame or a chip type LED package used for a light emitting diode is preferably used.

【００３７】基板１０４上には、ＬＥＤチップ１０３を
１つ配置してもよいし、２以上配置することもできる。
また、発光波長を調節させるなどために複数の発光波長
を有するＬＥＤチップを配置させることもできる。Ｓｉ
Ｃ上に形成された窒化物系化合物半導体を利用したＬＥ
Ｄチップなどを配置させる場合、接着性と共に十分な電
気伝導性がもとめられる。また、ＬＥＤチップ１０３の
電極を導電性ワイヤーを利用して基板１０４となるリー
ドフレームなどと接続させる場合は、導電性ワイヤーな
どとの接続性が良いことが好ましい。On the substrate 104, one LED chip 103 may be arranged, or two or more LED chips 103 may be arranged.
Further, an LED chip having a plurality of emission wavelengths can be arranged to adjust the emission wavelength. Si
LE using nitride-based compound semiconductor formed on C
When a D chip or the like is arranged, sufficient electrical conductivity is required together with adhesiveness. In the case where the electrode of the LED chip 103 is connected to a lead frame or the like serving as the substrate 104 using a conductive wire, it is preferable that the connection to the conductive wire or the like be good.

【００３８】このような基板として具体的には、リード
フレームやパッケージなどとして、鉄、銅、鉄入り銅、
錫入り銅、銅金銀などをメッキしたアルミニウムや鉄、
さらにはセラミックや種々の合成樹脂などの材料を用い
て種々の形状に形成させることができる。また、基板の
一部を利用して反射部材を構成させてもよい。Specific examples of such a substrate include iron, copper, iron-containing copper, lead frame and package.
Aluminum or iron plated with tin-containing copper, copper gold, silver, etc.
Furthermore, it can be formed into various shapes using materials such as ceramics and various synthetic resins. Further, the reflection member may be configured by using a part of the substrate.

【００３９】（導電性ワイヤー）電気的接続部材である
導電性ワイヤーとしては、ＬＥＤチップ１０３の電極と
のオーミック性、機械的接続性、電気伝導性及び熱伝導
性がよいものが求められる。熱伝導度としては０．０１
ｃａｌ／ｃｍ2／ｃｍ／℃以上が好ましく、より好まし
くは０．５ｃａｌ／ｃｍ2／ｃｍ／℃以上である。ま
た、作業性などを考慮して導電性ワイヤー１０７の直径
は、好ましくは、Φ１０μｍ以上、Φ４５μｍ以下であ
る。このような導電性ワイヤーとして具体的には、金、
銅、白金、アルミニウム等の金属及びそれらの合金を用
いた導電性ワイヤーが挙げられる。このような導電性ワ
イヤーは、各ＬＥＤチップ１０３の電極と、インナー・
リード及びマウント・リードなどと、をワイヤーボンデ
ィング機器によって容易に接続させることができる。(Electrically Conductive Wire) As the electrically conductive wire, which is an electrical connection member, one having good ohmic properties, mechanical connectivity, electrical conductivity, and thermal conductivity with the electrodes of the LED chip 103 is required. 0.01 as thermal conductivity
cal / cm 2 / cm / ℃ or more, more preferably 0.5cal / cm 2 / cm / ℃ above. The diameter of the conductive wire 107 is preferably Φ10 μm or more and Φ45 μm or less in consideration of workability and the like. Specifically, as such a conductive wire, gold,
Conductive wires using metals such as copper, platinum and aluminum and alloys thereof are exemplified. Such a conductive wire is connected to an electrode of each LED chip 103 and an inner wire.
Leads, mount leads, and the like can be easily connected by wire bonding equipment.

【００４０】（表示装置）本願発明の発光ダイオードを
ＬＥＤ表示器に利用した場合、白色系発光ダイオードの
みを用いＬＥＤ表示装置とすることもできる。即ち、図
４や図５の如き白色系が発光可能な本願発明の発光ダイ
オードのみをマトリックス状などに配置し、白黒用のＬ
ＥＤ表示器５０１を構成できる。この表示装置におい
て、白色発光可能な発光ダイオード用駆動回路のみとし
てＬＥＤ表示器を構成させることができる。ＬＥＤ表示
器は、駆動回路である点灯回路などと電気的に接続させ
る。駆動回路からの出力パルスによって種々の画像が表
示可能なデイスプレイ等とすることができる。駆動回路
としては、入力される表示データを一時的に記憶させる
ＲＡＭ（Ｒａｎｄｏｍ、Ａｃｃｅｓｓ、Ｍｅｍｏｒｙ）
５０４と、ＲＡＭ５０４に記憶されるデータから個々の
発光ダイオードを所定の明るさに点灯させるための階調
信号を演算する階調制御回路５０３と、階調制御回路５
０３の出力信号でスイッチングされて、発光ダイオード
を点灯させるドライバー５０２とを備える。階調制御回
路５０３は、ＲＡＭに記憶されるデータから発光ダイオ
ードの点灯時間を演算してパルス信号を出力する。(Display Device) When the light emitting diode of the present invention is used for an LED display, an LED display device can be formed using only white light emitting diodes. That is, only the light-emitting diodes of the present invention capable of emitting white light as shown in FIGS.
The ED display 501 can be configured. In this display device, an LED display can be configured as only a light emitting diode driving circuit capable of emitting white light. The LED display is electrically connected to a driving circuit, such as a lighting circuit. A display or the like capable of displaying various images by an output pulse from the drive circuit can be provided. A RAM (Random, Access, Memory) for temporarily storing input display data as a drive circuit
504, a gradation control circuit 503 for calculating a gradation signal for lighting each light emitting diode to a predetermined brightness from data stored in the RAM 504, and a gradation control circuit 5
And a driver 502 which is switched by the output signal 03 to turn on the light emitting diode. The gradation control circuit 503 calculates the lighting time of the light emitting diode from the data stored in the RAM and outputs a pulse signal.

【００４１】したがって、白黒用のＬＥＤ表示装置はＲ
ＧＢのフルカラー表示器と異なり当然回路構成を簡略化
できると共に高精細化できる。そのため、安価にＲＧＢ
の発光ダイオードの特性に伴う色むらなどのないディス
プレイとすることができるものである。また、従来の赤
色、緑色のみを用いたＬＥＤ表示器に比べ人間の目に対
する刺激が少なく長時間の使用に適している。以下、本
願発明の実施例について説明するが本願発明は、具体的
実施例のみに限定されるものでないことは言うまでもな
い。Therefore, the LED display device for black and white is R
Unlike the GB full-color display, the circuit configuration can be simplified and the definition can be increased. Therefore, RGB
It is possible to provide a display without color unevenness due to the characteristics of the light emitting diode. Further, compared to the conventional LED display using only red and green, it is less irritating to human eyes and is suitable for long-time use. Hereinafter, embodiments of the present invention will be described, but it goes without saying that the present invention is not limited to only specific embodiments.

【００４２】[0042]

【実施例】【Example】

（実施例１）ＬＥＤチップは、発光層として発光ピーク
が４５０ｎｍのＩｎ0.2Ｇａ0.8Ｎ半導体を用いた。ＬＥ
Ｄチップは、洗浄させたサファイヤ基板上にＴＭＧ（ト
リメチルガリウム）ガス、ＴＭＩ（トリメチルインジュ
ウム）ガス、窒素ガス及びドーパントガスをキャリアガ
スと共に流し、ＭＯＣＶＤ法で窒化物系化合物半導体を
成膜させることにより形成させた。ドーパントガスとし
てＳｉＨ4とＣｐ2Ｍｇと、を切り替えることによってＮ
型やＰ型導電性の半導体を形成させる。発光素子として
はＮ型導電性を有する窒化ガリウム半導体であるコンタ
クト層と、Ｐ型導電性を有する窒化ガリウム半導体であ
るクラッド層、コンタクト層を形成させた。Ｎ型コンタ
クト層とＰ型クラッド層との間に厚さ約３ｎｍであり、
単一量子構造となるノンドープＩｎＧａＮの活性層を形
成した。（なお、サファイヤ基板上には低温で窒化ガリ
ウム半導体を形成させバッファ層とさせてある。また、
Ｐ型半導体は、成膜後４００℃以上でアニールさせてあ
る。）(Example 1) In an LED chip, an In 0.2 Ga 0.8 N semiconductor having a light emission peak of 450 nm was used as a light emitting layer. LE
The D-chip is to flow a TMG (trimethyl gallium) gas, a TMI (trimethyl indium) gas, a nitrogen gas and a dopant gas together with a carrier gas on a cleaned sapphire substrate, and to form a nitride-based compound semiconductor by MOCVD. Formed. By switching between SiH 4 and Cp 2 Mg as the dopant gas, N
A semiconductor having a mold or P-type conductivity is formed. As the light emitting element, a contact layer made of a gallium nitride semiconductor having N-type conductivity, a clad layer made of a gallium nitride semiconductor having P-type conductivity, and a contact layer were formed. A thickness of about 3 nm between the N-type contact layer and the P-type cladding layer,
An active layer of non-doped InGaN having a single quantum structure was formed. (Note that a gallium nitride semiconductor is formed on the sapphire substrate at a low temperature to serve as a buffer layer.
The P-type semiconductor is annealed at 400 ° C. or higher after film formation. )

【００４３】エッチングによりサファイア基板上のＰＮ
各半導体コンタクト層の表面を露出させた後、スパッタ
リングにより各電極をそれぞれ形成させた。サファイア
基板の半導体が形成されていない表面にスパッタリング
法によりＡｇを形成させた。こうして出来上がった半導
体ウエハーをスクライブラインを引いた後、外力により
分割させＬＥＤチップを形成させた。PN on sapphire substrate by etching
After exposing the surface of each semiconductor contact layer, each electrode was formed by sputtering. Ag was formed on the surface of the sapphire substrate where the semiconductor was not formed by a sputtering method. After the scribe line was drawn on the semiconductor wafer thus completed, it was divided by an external force to form LED chips.

【００４４】ダイボンド部材としてエポキシ樹脂を用い
てＬＥＤチップをダイボンディング機器で銀メッキした
銅製リードフレームの先端カップ内にダイボンドした。
ＬＥＤチップの各電極と、カップが設けられたマウント
・リードやインナー・リードとそれぞれ金線でワイヤー
ボンディングし電気的導通を取った。Using an epoxy resin as a die bonding member, an LED chip was die-bonded into a tip cup of a silver-plated copper lead frame by a die bonding apparatus.
Each electrode of the LED chip was wire-bonded to a mount lead or an inner lead provided with a cup with a gold wire to establish electrical continuity.

【００４５】一方、蛍光物質は、Ｙ、Ｇｄ、Ｃｅの希土
類元素を化学量論比で酸に溶解した溶解液を蓚酸で共沈
させた。これを焼成して得られる共沈酸化物と、酸化ア
ルミニウムと混合して混合原料を得る。これにフラック
スとしてフッ化アンモニウムを混合して坩堝に詰め、空
気中１４００°Ｃの温度で３時間焼成して焼成品を得
た。焼成品を水中でボールミルして、洗浄、分離、乾
燥、最後に篩を通して形成させた。On the other hand, as a fluorescent substance, a solution obtained by dissolving rare earth elements of Y, Gd, and Ce in an stoichiometric ratio in an acid was coprecipitated with oxalic acid. This is mixed with a coprecipitated oxide obtained by calcination and aluminum oxide to obtain a mixed raw material. This was mixed with ammonium fluoride as a flux, packed in a crucible, and fired in air at a temperature of 1400 ° C. for 3 hours to obtain a fired product. The calcined product was ball milled in water, washed, separated, dried, and finally formed through a sieve.

【００４６】形成された（Ｙ0.8Ｇｄ0.2）3Ａｌ5Ｏ12：
Ｃｅ蛍光物質７５重量部、エラストマー状シリコーン樹
脂１００重量部をよく混合してスラリーとさせた。この
スラリーをＬＥＤチップが配置されたマウント・リード
上のカップ内に０．２μｌ注入させた。注入後、蛍光物
質が含有された樹脂を１５０℃１時間で硬化させた。こ
うしてＬＥＤチップ上に厚さ１２０μの蛍光物質が含有
された色変換部材が形成された。その後、さらにＬＥＤ
チップや蛍光物質を外部応力、水分及び塵芥などから保
護する目的でモールド部材として透光性エポキシ樹脂を
形成させた。モールド部材は、砲弾型の型枠の中に色変
換部材が形成されたリードフレームを挿入し透光性エポ
シキ樹脂を混入後、１５０℃５時間にて硬化させた。(Y 0.8 Gd 0.2 ) 3 Al 5 O 12 formed :
75 parts by weight of the Ce fluorescent material and 100 parts by weight of the elastomeric silicone resin were mixed well to form a slurry. 0.2 μl of this slurry was injected into a cup on a mount lead on which an LED chip was placed. After the injection, the resin containing the fluorescent substance was cured at 150 ° C. for 1 hour. Thus, a color conversion member containing a fluorescent substance having a thickness of 120 μm was formed on the LED chip. After that, further LED
A translucent epoxy resin was formed as a mold member for the purpose of protecting the chip and the fluorescent substance from external stress, moisture, dust and the like. The mold member was cured at 150 ° C. for 5 hours after inserting a lead frame on which a color conversion member was formed into a shell type mold, mixing a light-transmitting epoxy resin, and then molding the lead frame.

【００４７】こうして得られた白色系が発光可能な発光
ダイオードの色度点、色温度、演色性指数を測定した。
それぞれ、色度点（ｘ＝０．３９２、ｙ＝０．４８
０）、色温度８０７０Ｋ、Ｒａ（演色性指数）＝８５．
７を示した。また、発光光率は９．８ ｌｍ／ｗであっ
た。寿命試験として、温度２５℃２０ｍＡ通電、温度２
５℃６０ｍＡ通電の各試験においても長時間にわたっ
て、発光出力が維持できることを確認した。The chromaticity point, color temperature and color rendering index of the thus obtained light emitting diode capable of emitting white light were measured.
The chromaticity points (x = 0.392, y = 0.48, respectively)
0), color temperature 8070K, Ra (color rendering index) = 85.
7 was indicated. The luminous efficiency was 9.8 lm / w. As a life test, a temperature of 25 ° C. and a current of 20 mA were applied at a temperature of 2 mA.
It was confirmed that the light emission output could be maintained for a long time in each test at 5 ° C. and 60 mA.

【００４８】（比較例１）反射部材を設けず色変換部材
の基材をエポキシ樹脂のみとした以外は実施例１と同様
にして発光ダイオードを形成させた。こうして形成され
た発光ダイオードを実施例１と同様にして寿命試験を行
い実施例１と共に図６に示す。(Comparative Example 1) A light emitting diode was formed in the same manner as in Example 1 except that the reflection member was not provided and the base material of the color conversion member was only epoxy resin. The light emitting diode thus formed was subjected to a life test in the same manner as in Example 1, and is shown in FIG.

【００４９】（実施例２）本願発明の発光ダイオードを
図４の如くＬＥＤ表示器５０１の１つであるディスプレ
イに利用した。実施例１と同様にして形成させた発光装
置である発光ダイオード４０１を銅パターンを形成させ
たポリカーボネート基板上に、１６×１６のマトリック
ス状に配置させた。基板と発光ダイオード４０１とは自
動ハンダ実装装置を用いてハンダ付けを行った。次にフ
ェノール樹脂によって形成された筐体４０４内部に配置
し固定させた。遮光部材４０５は、筐体４０４と一体成
形させてある。発光ダイオード４０１の先端部を除いて
筐体４０４、発光ダイオード４０１、基板及び遮光部材
４０５の一部をピグメントにより黒色に着色したシリコ
ンーゴム４０６によって充填させた。その後、常温、７
２時間でシリコーンゴムを硬化させＬＥＤ表示器５０１
を形成させた。このＬＥＤ表示器と、入力される表示デ
ータを一時的に記憶させるＲＡＭ５０４（Ｒａｎｄｏ
ｍ、Ａｃｃｅｓｓ、Ｍｅｍｏｒｙ）及びＲＡＭ５０４に
記憶されるデータから発光ダイオードを所定の明るさに
点灯させるための階調信号を演算する階調制御回路５０
３と階調制御回路５０３の出力信号でスイッチングされ
て発光ダイオードを点灯させるドライバー５０２とを備
えたＣＰＵの駆動手段と、を電気的に接続させてＬＥＤ
表示装置を構成した。ＬＥＤ表示器を駆動させ白黒ＬＥ
Ｄ表示装置として駆動できることを確認した。(Embodiment 2) The light emitting diode of the present invention was used for a display which is one of the LED displays 501 as shown in FIG. Light emitting diodes 401, which are light emitting devices formed in the same manner as in Example 1, were arranged in a 16 × 16 matrix on a polycarbonate substrate on which a copper pattern was formed. The substrate and the light emitting diode 401 were soldered using an automatic solder mounting device. Next, it was arranged and fixed inside the housing 404 formed of a phenol resin. The light blocking member 405 is formed integrally with the housing 404. Except for the tip of the light emitting diode 401, the housing 404, the light emitting diode 401, the substrate, and a part of the light shielding member 405 were filled with a silicone rubber 406 colored black with a pigment. Then, at room temperature, 7
Cure silicone rubber in 2 hours and LED display 501
Was formed. This LED display and a RAM 504 (Rando) for temporarily storing input display data
m, Access, Memory) and data stored in the RAM 504, a gradation control circuit 50 for calculating a gradation signal for lighting the light emitting diode to a predetermined brightness.
And a driver 502 for switching the output signal of the gradation control circuit 503 to turn on the light emitting diode, and a CPU driving means having an LED.
A display device was constructed. Drive LED display to make black and white LE
It was confirmed that the device could be driven as a D display device.

【００５０】[0050]

【発明の効果】本願発明の請求項１の構成とすることに
より高出力且つ高エネルギーで発光可能な窒化物系化合
物半導体を利用したＬＥＤチップと蛍光物質とを利用し
た発光ダイオードとした場合においても、長時間高輝度
時の使用下においても発光効率の低下が極めて少ない発
光ダイオードとすることができる。According to the structure of claim 1 of the present invention, even when an LED chip using a nitride-based compound semiconductor capable of emitting light with high output and high energy and a light emitting diode using a fluorescent material are used. In addition, a light emitting diode in which luminous efficiency does not significantly decrease even when used for a long time at high luminance can be obtained.

【００５１】本願発明の請求項２の構成とすることによ
り、接着性を持たせつつより簡便に高輝度、長時間の使
用においても発光光率の低下が極めて少ない種々の発光
ダイオードとすることができる。By adopting the structure of the second aspect of the present invention, it is possible to easily provide various light emitting diodes with high luminance and a very small decrease in the luminous efficiency even when used for a long time, while maintaining the adhesiveness. it can.

【００５２】本願発明の請求項３の構成とすることによ
り、種々の形状の発光ダイオードとすることができる。
蛍光物質の含有量や形状などにより種々の色調を調整さ
せることもできる。By adopting the configuration of claim 3 of the present invention, light emitting diodes of various shapes can be obtained.
Various color tones can be adjusted depending on the content and shape of the fluorescent substance.

【００５３】本願発明の請求項４の構成とすることによ
り、より耐光性が強く簡便に高輝度、長時間の使用にお
いても発光光率の低下が極めて少ない種々の発光ダイオ
ードとすることができる。By adopting the structure of claim 4 of the present invention, it is possible to easily produce various light emitting diodes having higher light resistance, high luminance, and extremely small decrease in the luminous efficiency even when used for a long time.

【００５４】本願発明の請求項５の構成とすることによ
り、比較的安価で高精細なＬＥＤ表示装置や視認角度に
よって色むらの少ないＬＥＤ表示装置とすることができ
る。By adopting the configuration of claim 5 of the present invention, a relatively inexpensive and high-definition LED display device or an LED display device with less color unevenness depending on the viewing angle can be obtained.

【００５５】[0055]

【図面の簡単な説明】[Brief description of the drawings]

【図１】図１は、本願発明の発光ダイオードの模式的断
面図である。FIG. 1 is a schematic sectional view of a light emitting diode of the present invention.

【図２】図２は、本願発明の他の発光ダイオードの模式
的断面図である。FIG. 2 is a schematic sectional view of another light emitting diode of the present invention.

【図３】図３は、発光ダイオードにおける光閉じこめを
説明するための模式的拡大図である。FIG. 3 is a schematic enlarged view for explaining light confinement in a light emitting diode.

【図４】図４は、本願発明の発光ダイオードを用いたＬ
ＥＤ表示装置の模式図である。FIG. 4 is a schematic diagram showing a light emitting diode using the light emitting diode of the present invention.
It is a schematic diagram of an ED display device.

【図５】図５は、図４に用いられるＬＥＤ表示器のブロ
ック図である。FIG. 5 is a block diagram of an LED display used in FIG. 4;

【図６】図６（Ａ）は、本願発明の実施例１と比較のた
めに示した比較例１の発光ダイオードとの温度２５℃２
０ｍＡ通電における寿命試験を示し、図６（Ｂ）は、本
願発明の実施例１と比較のために示した比較例１の発光
ダイオードとの温度２５℃６０ｍＡ通電における寿命試
験を示したグラフである。FIG. 6 (A) shows a temperature of 25 ° C. 2 with a light emitting diode of Comparative Example 1 shown for comparison with Example 1 of the present invention.
FIG. 6B is a graph showing a life test at a temperature of 25 ° C. and a current of 60 mA with a light emitting diode of Comparative Example 1 shown for comparison with Example 1 of the present invention. .

【符号の説明】[Explanation of symbols]

１０１、２０１・・・反射部材 １０２、２０２・・・色変換部材 １０３、２０３、３０３・・・ＬＥＤチップ １０４・・・基板であるマウント・リード １０５・・・インナー・リード １０６、２０６・・・モールド部材 １０７、２０７、３０７・・・ダイボンド部材 ２０４・・・パッケージ ３２１・・・色変換部材の基材 ３２２・・・蛍光物質 ３３０・・・樹脂劣化した着色部 101, 201: Reflecting member 102, 202: Color conversion member 103, 203, 303: LED chip 104: Mount lead which is a substrate 105: Inner lead 106, 206 ... Mold member 107, 207, 307 Die bond member 204 Package 321 Base material of color conversion member 322 Fluorescent material 330 Colored portion degraded by resin

Claims (5)

【特許請求の範囲】[Claims] 【請求項１】基板上にダイボンド部材によって固定され
たＬＥＤチップと、該ＬＥＤチップからの発光の少なく
とも一部を吸収し波長変換して発光する蛍光物質を含む
色変換部材と、を有する発光ダイオードであって、 前記ＬＥＤチップは透光性基体上の一方の面側に窒化物
系化合物半導体を有すると共に、前記透光性基体の他方
の面側に反射部材を設けたことを特徴とする発光ダイオ
ード。1. A light emitting diode comprising: an LED chip fixed on a substrate by a die bonding member; and a color conversion member containing a fluorescent substance that absorbs at least a part of light emitted from the LED chip and converts the wavelength to emit light. The LED chip has a nitride-based compound semiconductor on one surface side of a light-transmitting substrate, and a reflection member is provided on the other surface side of the light-transmitting substrate. diode. 【請求項２】前記ダイボンド部材がエポキシ樹脂、シリ
コーン樹脂から選択される少なくとも１種である請求項
１記載の発光ダイオード。2. The light emitting diode according to claim 1, wherein said die bonding member is at least one selected from an epoxy resin and a silicone resin. 【請求項３】前記色変換部材は基材中に蛍光物質が含有
されている請求項１記載の発光ダイオード。3. The light emitting diode according to claim 1, wherein said color conversion member contains a fluorescent substance in a base material. 【請求項４】前記基材がエラストマー或いはゲル状シリ
コーン樹脂、アモルファスフッ素樹脂、ポリイミド樹脂
から選択される少なくとも１種である請求項３記載の発
光ダイオード。4. The light emitting diode according to claim 3, wherein said base material is at least one selected from an elastomer or a gel silicone resin, an amorphous fluororesin, and a polyimide resin. 【請求項５】請求項１記載の発光ダイオードをマトリッ
クス状に配置したＬＥＤ表示器と、該ＬＥＤ表示器と電
気的に接続させた駆動回路と、を有するＬＥＤ表示装
置。5. An LED display device comprising: an LED display in which the light emitting diodes according to claim 1 are arranged in a matrix; and a driving circuit electrically connected to the LED display.
JP35025496A 1996-12-27 1996-12-27 Light emitting diode and led display using the same Pending JPH10190066A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP35025496A JPH10190066A (en) 1996-12-27 1996-12-27 Light emitting diode and led display using the same
JP2000267852A JP3729047B2 (en) 1996-12-27 2000-09-04 Light emitting diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP35025496A JPH10190066A (en) 1996-12-27 1996-12-27 Light emitting diode and led display using the same

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2000267852A Division JP3729047B2 (en) 1996-12-27 2000-09-04 Light emitting diode

Publications (1)

Publication Number Publication Date
JPH10190066A true JPH10190066A (en) 1998-07-21

Family

ID=18409261

Family Applications (1)

Application Number Title Priority Date Filing Date
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