JP3323945B2 - Dummy wafer - Google Patents
Dummy waferInfo
- Publication number
- JP3323945B2 JP3323945B2 JP34783191A JP34783191A JP3323945B2 JP 3323945 B2 JP3323945 B2 JP 3323945B2 JP 34783191 A JP34783191 A JP 34783191A JP 34783191 A JP34783191 A JP 34783191A JP 3323945 B2 JP3323945 B2 JP 3323945B2
- Authority
- JP
- Japan
- Prior art keywords
- dummy wafer
- wafer
- alumina
- dummy
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Description
【０００１】[0001]
【産業上の利用分野】本発明は、シリコンウェーハに対
する薄膜形成過程において、各種処理条件の評価及び検
査、又は汚染物質付着防止等のために用いられるダミー
ウェーハ（パイロットウェーハ）に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a dummy wafer (pilot wafer) used for evaluating and inspecting various kinds of processing conditions or preventing contamination from contaminants in a process of forming a thin film on a silicon wafer.
【０００２】[0002]
【従来の技術】ＬＳＩやＶＬＳＩ等の半導体製造プロセ
スにおいては、ＣＶＤやＰＶＤ、スパッタリング等によ
ってシリコンウェーハ上に成膜する工程が重要な位置を
占めており、成膜された薄膜は、高い均質性が要求され
ている。そのため、成膜工程での品質管理や薄膜の評価
が半導体製造プロセスに不可欠な要素となっており、具
体的には、ダミーウェーハを用い、成膜時間やウェーハ
温度等の成膜条件とウェーハ上に形成される膜の厚さと
の関係を測定したり、膜の純度分析等が行われている。
又、ダミーウェーハは、ＣＶＤにおいてグラファイト電
極から飛散するカーボンの付着防止用ダミーとしても用
いられている。2. Description of the Related Art In semiconductor manufacturing processes such as LSI and VLSI, a process of forming a film on a silicon wafer by CVD, PVD, sputtering or the like occupies an important position, and the formed thin film has high uniformity. Is required. Therefore, quality control and thin film evaluation in the film formation process are indispensable elements in the semiconductor manufacturing process. Specifically, using a dummy wafer, film formation conditions such as film formation time and wafer temperature, and The relationship with the thickness of the film formed on the substrate is measured, and the purity of the film is analyzed.
The dummy wafer is also used as a dummy for preventing carbon scattered from the graphite electrode in CVD.
【０００３】このような工程において、シリコンウェー
ハをダミーウェーハとして用いると、薄膜の組成を分析
する際には、含有するシリコンの量が多すぎるため、正
確な分析が困難となる一方、ＣＶＤ等の熱処理を行う工
程では反復して使用できない不具合がある。このため、
従来、ダミーウェーハとしては、シリコン以外の他の材
料からなる、例えば一般的な焼成温度で常圧焼結によっ
て作られるアルミナセラミックスからなるもの（実開昭
６３−２７４６９号公報参照）が知られている。In such a process, when a silicon wafer is used as a dummy wafer, accurate analysis is difficult because the amount of silicon contained is too large when analyzing the composition of a thin film. There is a disadvantage that the heat treatment process cannot be used repeatedly. For this reason,
Conventionally, as a dummy wafer, there has been known a dummy wafer made of a material other than silicon, for example, an alumina ceramic made by normal pressure sintering at a general firing temperature (see Japanese Utility Model Application Laid-Open No. 63-27469). I have.
【０００４】[0004]
【発明が解決しようとする課題】しかしながら、従来の
一般的なアルミナセラミックスからなるダミーウェーハ
は、アルミナ（Ａｌ2 Ｏ3 ）純度が９９．５％程度であ
り、シリコン（Ｓｉ）、カルシウム（Ｃａ）、ナトリウ
ム（Ｎａ）等のアルミナの焼結に影響を与える成分が数
１０００ｐｐｍ含有されており、この組成のアルミナを
一般的な焼成温度（１６００℃）で常圧焼結した場合、
かさ比重は、３．９０〜３．９６程度しか得られず、真
比重（３．９９）に達することは非常に困難である。従
って、得られるダミーウェーハの内部及び表面には、数
μｍから数１００μｍの気孔が多数存在する。However, a conventional dummy wafer made of a general alumina ceramic has an alumina (Al2 O3) purity of about 99.5%, and silicon (Si), calcium (Ca) and sodium. (Na) and other components that affect the sintering of alumina are contained at several thousand ppm, and when this type of alumina is sintered under normal pressure at a general firing temperature (1600 ° C.),
The bulk specific gravity is only about 3.90 to 3.96, and it is very difficult to reach the true specific gravity (3.99). Therefore, many pores of several μm to several hundred μm exist inside and on the surface of the obtained dummy wafer.
【０００５】かかる一般的なアルミナセラミックスから
なるダミーウェーハにスパッタ装置等で蒸着を施すと、
セラミックス表面に露出した気孔内にも蒸着され、蒸着
物を洗浄して蒸着膜厚を測定する際、気孔内に蒸着され
た蒸着物を完全に除去することが不可能であった。又、
ＣＶＤやその他の膜形成処理工程においても、ダミーウ
ェーハを常に洗浄しておく必要があるが、洗浄での剥離
性に問題があった。更に、近年では、次回の使用に先立
ち、セラミックス表面を加工により除去することによっ
て、気孔内蒸着物の除去の必要も生じている。[0005] When a dummy wafer made of such general alumina ceramics is deposited by a sputtering apparatus or the like,
It was also deposited in the pores exposed on the ceramic surface, and it was not possible to completely remove the deposit deposited in the pores when cleaning the deposit and measuring the thickness of the deposited film. or,
In the CVD and other film formation processing steps as well, it is necessary to always clean the dummy wafer, but there is a problem in the releasability in the cleaning. Further, in recent years, prior to the next use, it has become necessary to remove the deposits in the pores by removing the ceramic surface by processing.
【０００６】又、上述した純度の一般的なアルミナセラ
ミックスからなるダミーウェーハでは、膜の純度分析を
正確に行うことができず、かつ洗浄の際の耐薬品性につ
いても問題があった。そこで、本発明は、蒸着物の除去
のために表面加工を施すことなく、洗浄による蒸着物等
の除去効果を高めると共に、膜の正確な純度分析を可能
とし、かつ洗浄の際の耐薬品性に優れたダミーウェーハ
の提供を目的とする。Further, in the case of a dummy wafer made of the above-mentioned general alumina ceramics having a purity, the purity analysis of the film cannot be accurately performed, and there is also a problem in chemical resistance at the time of washing. Therefore, the present invention enhances the effect of removing deposits and the like by washing without performing surface processing for removing deposits, enables accurate purity analysis of a film, and has chemical resistance during washing. The purpose is to provide an excellent dummy wafer.
【０００７】[0007]
【課題を解除するための手段】前記課題を解決するた
め、本発明のダミーウェーハは、純度が９９．９％以
上、かさ比重が３．９８以上、平均結晶粒径が１０〜１
００μｍの透光性多結晶アルミナセラミックスからなる
ものである。一方、表面は、２〜１００μｍの厚さのＣ
ＶＤアルミナ膜で覆われていることが好ましい。又、片
面は、ダイヤモンド砥石による研削加工面であり、か
つ、他の片面は、ダイヤモンドパウダーによる研磨面で
あることが好ましい。 In order to solve the above-mentioned problems, the dummy wafer of the present invention has a purity of 99.9% or more, a bulk specific gravity of 3.98 or more, and an average crystal grain size of 10 to 1%.
It is made of a translucent polycrystalline alumina ceramic of 00 μm. On the other hand, the surface has a thickness of 2 to 100 μm.
Preferably, it is covered with a VD alumina film. Also, one piece
The surface is a grinding surface with a diamond whetstone.
One side is polished with diamond powder
Preferably, there is.
【０００８】[0008]
【作用】上記手段においては、透光性多結晶アルミナセ
ラミックスが、高純度で、実質的に気孔が無く、真密度
焼結体となり、一般的なアルミナセラミックスのよう
に、不純物による二次相及び気孔が含まれることにより
透光性が失われることは無く、光を通すスリガラス状の
外観を呈する。In the above means, the translucent polycrystalline alumina ceramic is a high-purity, substantially pore-free, true-density sintered body. The translucency is not lost due to the inclusion of pores, and the glass has a glass-like appearance that allows light to pass through.
【０００９】透孔性多結晶アルミナセラミックスの平均
結晶粒径を１０〜１００μｍとすることにより、気孔を
極めて少なくできると共に、ひずみを小さくして機械的
強度を高めることができる。平均結晶粒径が１０μｍ未
満であると、結晶粒界に残留気孔が存在し、耐食性の低
下を招いたり、表面の気孔に外部からの汚染物質が侵入
し易いおそれがある。一方、平均結晶粒径が１００μｍ
を超えると、機械的強度が不足となり、薄いダミーウェ
ーハの取り扱いが困難となる。By setting the average crystal grain size of the porous polycrystalline alumina ceramic to 10 to 100 μm, pores can be extremely reduced, and strain can be reduced to increase mechanical strength. When the average crystal grain size is less than 10 μm, residual pores are present at the crystal grain boundaries, which may cause a reduction in corrosion resistance and may easily cause external contaminants to enter pores on the surface. On the other hand, the average crystal grain size is 100 μm
Is exceeded, the mechanical strength becomes insufficient and it becomes difficult to handle a thin dummy wafer.
【００１０】又、表面をＣＶＤアルミナ膜で覆うことに
より、表面の微小な気孔が全て埋まって表面が一層滑ら
かになる。ＣＶＤアルミナ膜は、２，３〜１００μｍの
厚さであることが好ましい。厚さが２，３μｍ未満であ
ると膜を設ける効果が得られず、又、１００μｍを超え
ると透光性多結晶アルミナセラミックスとの熱膨張差に
より剥離を生ずる。Further, by covering the surface with a CVD alumina film, all the fine pores on the surface are filled, and the surface becomes smoother. The CVD alumina film preferably has a thickness of a few micrometers to 100 micrometers. If the thickness is less than 2.3 μm, the effect of providing a film cannot be obtained, and if it exceeds 100 μm, peeling occurs due to the difference in thermal expansion from the translucent polycrystalline alumina ceramics.
【００１１】ここで、アルミナの純度が９９．９％未満
であると、膜の純度分析を正確に行うことができないと
共に、フッ酸等を用いた洗浄の際の耐薬品性が低下し、
かつ透光性が低下する。好ましくはアルミナの純度は、
９９．９９％以上である。又、かさ比重が３．９８未満
であると、ダミーウェーハの内部及び表面に気孔が存在
するようになり、透光性や機械的強度が低下すると共
に、蒸着物の残留や汚染物質の吸蔵を生ずる。If the purity of alumina is less than 99.9%, the purity of the film cannot be accurately analyzed, and the chemical resistance at the time of cleaning using hydrofluoric acid or the like is reduced.
In addition, the light transmittance decreases. Preferably the purity of the alumina is
99.99% or more. On the other hand, if the bulk specific gravity is less than 3.98, pores will be present inside and on the surface of the dummy wafer, so that the translucency and mechanical strength will be reduced, and the residual of deposits and occlusion of contaminants will be reduced. Occurs.
【００１２】更に、透光性多結晶アルミナセラミックス
は、光学直線透過率が可視光線領域で１０％以上あるこ
とが好ましく、このようにすることにより、ダミーウェ
ーハの内部が目視できるようになり、内部の混入物やク
ラックが一目瞭然となり、使用前の目視によって不良品
を発見することが可能となり、その信頼性を大幅に向上
することができる。Further, the translucent polycrystalline alumina ceramic preferably has an optical linear transmittance of 10% or more in a visible light region. By doing so, the inside of the dummy wafer becomes visible. The contaminants and cracks become apparent at a glance, and defective products can be found by visual inspection before use, and the reliability thereof can be greatly improved.
【００１３】一方、上記ダミーウェーハを製造するに
は、先ず、望ましくは９９．９９％以上の高純度アルミ
ナ原料粉を用い、これに異常粒子の成長抑制剤としての
マグネシア（ＭｇＯ）、有機成形助剤を添加混合して円
盤状に成形する。成形方法としては、プレス成形、押出
成形、射出成形又はドクターブレード法がとられる。得
られた成形体は、必要に応じてウェーハ形状に切断した
後、９００〜１１００℃の温度の大気中で仮焼して有機
添加物を飛散させ、焼成工程に進める。焼成前工程での
不純物混入は、焼成後の製品に悪影響を与えるため、各
装置や雰囲気等からの汚染をできるだけ少なくする工夫
が必要である。On the other hand, in order to manufacture the dummy wafer, first, a high-purity alumina raw material powder having a purity of preferably 99.99% or more is used, and magnesia (MgO) as a growth inhibitor of abnormal particles and an organic molding aid are used. The agent is added and mixed to form a disk. As a molding method, press molding, extrusion molding, injection molding or doctor blade method is employed. The obtained molded body is cut into a wafer shape as necessary, and then calcined in the air at a temperature of 900 to 1100 ° C. to disperse the organic additives, and then proceed to a firing step. Impurity contamination in the pre-firing step adversely affects the product after firing, so it is necessary to devise ways to minimize contamination from each device and atmosphere.
【００１４】次いで、真密度焼結体を得るため、真空中
や水素ガス雰囲気等の非酸化性雰囲気において１７００
〜１８５０℃の焼成温度で所要時間保持して仮焼体の焼
成を行う。水素ガス雰囲気焼成においては、水素の拡散
速度が大きいことから、焼成後期における気孔の排出が
容易になり、実質的に気孔が無くなる。又、焼成中にお
いて、アルカリ金属等の不純物の揮散が進行し、原料粉
に含まれる不純物量より不純物量が少なくなり、高純度
化が一層促進される。ここで、焼成温度及び保持時間
は、平均結晶粒径が１０〜１００μｍとなるよう適宜に
設定される。Next, in order to obtain a true density sintered body, 1700 in a non-oxidizing atmosphere such as a vacuum or a hydrogen gas atmosphere.
The calcined body is calcined by maintaining the calcined body at a calcining temperature of １８1850 ° C. for a required time. In the firing in a hydrogen gas atmosphere, the diffusion rate of hydrogen is high, so that the pores are easily discharged in the latter stage of the firing, and the pores are substantially eliminated. In addition, during the firing, the volatilization of impurities such as alkali metals progresses, and the amount of impurities becomes smaller than the amount of impurities contained in the raw material powder, thereby further promoting high purity. Here, the firing temperature and the holding time are appropriately set so that the average crystal grain size is 10 to 100 μm.
【００１５】得られた透光性多結晶アルミナセラミック
スからなるダミーウェーハには、異常粒子成長抑制剤と
して添加されたマグネシアが数１００ｐｐｍ程度含まれ
ている。このマグネシアは、一部又は全部がアルミナに
固溶しており、極一部がスピネルとしてアルミナ結晶会
合部に存在している場合がある。これは、耐酸性と気孔
の有無という点において、ダミーウェーハとしての機能
には、何等差し支えない。なお、上述したダミーウェー
ハの製造に際しては、異常粒子成長抑制剤としてのマグ
ネシアを添加することなく行うこともでき、この方が一
層好ましい。[0015] The resulting dummy wafer made of translucent polycrystalline alumina ceramics contains about 100 ppm of magnesia added as an abnormal particle growth inhibitor. This magnesia is partially or entirely dissolved in alumina, and a very small part of the magnesia may be present as a spinel in the alumina crystal association portion. This does not hinder the function as a dummy wafer in terms of acid resistance and the presence or absence of pores. The above-described dummy wafer can be manufactured without adding magnesia as an abnormal particle growth inhibitor, and this is more preferable.
【００１６】[0016]
【実施例】以下、本発明の一実施例を詳細に説明する。
先ず、純度９９．９９％、平均粒子径０．２μｍのアル
ミナ原料粉１００重量に、ストイキオメトリックスピネ
ル０．６重量部、アクリル系バインダー５重量部、イオ
ン交換水１５重量部を混練機に投入して混練し、粘土状
にした。この混練物を押出成形機の高さ１．２ｍｍ、幅
２００ｍｍの開口部を有する口金から押し出し、１２０
℃の温度の乾燥炉内に導入することによって薄板状の成
形体を得た。DESCRIPTION OF THE PREFERRED EMBODIMENTS One embodiment of the present invention will be described below in detail.
First, 0.6 parts by weight of stoichiometric spinel, 5 parts by weight of an acrylic binder, and 15 parts by weight of ion-exchanged water are put into a kneader with 100 parts by weight of alumina raw material powder having a purity of 99.99% and an average particle diameter of 0.2 μm. And kneaded to form a clay. The kneaded material was extruded from a die having an opening of 1.2 mm in height and 200 mm in width of an extruder, and was extruded from a die having an opening of 120 mm.
A thin plate-shaped molded product was obtained by introducing into a drying oven at a temperature of ° C.
【００１７】次に、薄板状の成形体を打ち抜きパンチで
直径１９０ｍｍの円盤板に打ち抜いてウェーハ素体と
し、これを空気中において１０００℃の温度で２時間保
持して仮焼成し、成形時に添加したバインダーを焼き飛
ばした。Next, the thin plate-shaped molded body is punched into a disk having a diameter of 190 mm by a punch to form a wafer body, which is kept in air at a temperature of 1000 ° C. for 2 hours, pre-fired, and added at the time of molding. The burned binder was burned off.
【００１８】次いで、仮焼成体を水素ガス雰囲気中にお
いて１８００℃の温度で２時間焼成し、透光性多結晶ア
ルミナセラミックスとした。焼成体は、焼成収縮して直
径１５８ｍｍ、厚さ１．０ｍｍとなっていた。Next, the calcined body was calcined in a hydrogen gas atmosphere at a temperature of 1800 ° C. for 2 hours to obtain a translucent polycrystalline alumina ceramic. The fired body was shrunk by firing to have a diameter of 158 mm and a thickness of 1.0 mm.
【００１９】そして、焼成体をダイヤモンド砥石を用い
て直径６インチ、厚さ０．６ｍｍに研削加工し、更に片
面をダイヤモンドパウダーを用いて研磨加工してダミー
ウェーハとした。比較のため、一般的なアルミナセラミ
ックスからなるダミーウェーハを製造した。このダミー
ウェーハの製造に際しては、先ず、純度９９．８％、平
均粒子径０．５μｍのアルミナ原料粉を用い、上述した
実施例と同様の配合、成形法及び打ち抜きによって円盤
状のウェーハ素体を得た。The fired body was ground to a diameter of 6 inches and a thickness of 0.6 mm using a diamond grindstone, and one side was polished using diamond powder to form a dummy wafer. For comparison, a dummy wafer made of general alumina ceramics was manufactured. When manufacturing this dummy wafer, first, a disc-shaped wafer body was prepared by using the same raw material powder having a purity of 99.8% and an average particle diameter of 0.5 μm by the same blending, molding method and punching as in the above-described embodiment. Obtained.
【００２０】次いで、ウェーハ素体を空気中において１
６００℃の温度で２時間焼成してアルミナセラミックス
の焼成体とした。そして、焼成体を実施例と同様にダイ
ヤモンド砥石により研削加工し、かつダイヤモンドパウ
ダーを用いて片面研磨加工してダミーウェーハとした。Next, the wafer body is placed in air for 1 hour.
It was fired at a temperature of 600 ° C. for 2 hours to obtain a fired body of alumina ceramics. Then, the fired body was ground with a diamond grindstone in the same manner as in the example, and was subjected to one-side polishing with diamond powder to obtain a dummy wafer.
【００２１】上記各ダミーウェーハの研磨面を表面粗さ
計で測定すると共に、重量を計測し、かつ洗浄した後、
スパッタ装置によりシリカ膜を形成した。次いで、成膜
したシリカをフッ酸で溶解し、水洗乾燥後にそれぞれの
ダミーウェーハの重量の計測、その一部を採取したＳＥ
Ｍ（走査型電子顕微鏡）観察及びＥＰＭＡ（Ｘ線マイク
ロアナリシス）観察並びに膜溶解に用いたフッ酸のＩＣ
Ｐ（誘導結合プラズマ）による定量分析を行ったとこ
ろ、表１に示すようになった。After measuring the polished surface of each of the dummy wafers with a surface roughness meter, measuring the weight and washing,
A silica film was formed by a sputtering device. Then, the formed silica was dissolved with hydrofluoric acid, and after washing and drying, the weight of each dummy wafer was measured, and a part of the measured weight was collected.
IC of hydrofluoric acid used for M (scanning electron microscope) observation, EPMA (X-ray microanalysis) observation and film dissolution
Table 1 shows the results of quantitative analysis using P (inductively coupled plasma).
【００２２】[0022]
【表１】 この結果から、一般的なアルミナセラミックスからなる
ダミーウェーハでは、気孔内にスパッタリングされたシ
リカがフッ酸にすべて溶解されずに残っているのに対し
て、透光性多結晶アルミナセラミックスからなるダミー
ウェーハには残存物が無いことが確認された。又、一般
的なアルミナセラミックスからなるダミーウェーハで
は、アルミナセラミックスに含まれている鉄（Ｆｅ）、
ナトリウム（Ｎａ）等の不純物が膜溶解に用いたフッ酸
中に溶解していることがわかった。[Table 1] From these results, it can be seen that in a dummy wafer made of a general alumina ceramic, the silica sputtered in the pores remains without being dissolved in hydrofluoric acid, whereas a dummy wafer made of a translucent polycrystalline alumina ceramic It was confirmed that there was no residue. Further, in a dummy wafer made of general alumina ceramics, iron (Fe) contained in alumina ceramics,
It was found that impurities such as sodium (Na) were dissolved in the hydrofluoric acid used for dissolving the film.
【００２３】更に、本発明に係る透光性多結晶アルミナ
セラミックスからなるダミーウェーハは、残留気孔が無
いため、極めて高い表面精度に研削、研磨加工できるこ
とがわかった。Further, it has been found that the dummy wafer made of the translucent polycrystalline alumina ceramics according to the present invention has no residual pores and can be ground and polished with extremely high surface accuracy.
【００２４】[0024]
【発明の効果】以上説明したように、本発明のダミーウ
ェーハによれば、透光性多結晶アルミナセラミックス
が、高純度で、実質的に気孔が無く、真密度焼結体とな
り、一般的なアルミナセラミックスのように、不純物に
よる二次相及び気孔が含まれることにより透光性が失わ
れることは無く、光を通すスリガラス状の外観を呈する
ので、従来のもののように蒸着物の除去のために表面加
工を施す必要がなく、洗浄による蒸着物等の除去効果を
格段に高めることができると共に、膜の極めて正確な純
度分析ができ、かつ洗浄の際の耐薬品性を優秀なものと
することができ、又、透光性多結晶アルミナセラミック
スの平均結晶粒径を１０〜１００μｍとしたもので、気
孔を極めて少なくでき、目視によってその内部の欠陥を
発見できると共に、ひずみを小さくして機械的強度を高
めることができる。一方、表面を２〜１００μｍの厚さ
のＣＶＤアルミナ膜で覆うことにより、表面の微小な気
孔が全て埋まって表面が一層滑らかとなるので、洗浄に
よる蒸着物等の除去効果を飛躍的に高めることができ
る。As described above, according to the dummy wafer of the present invention, the translucent polycrystalline alumina ceramic is a high-purity, substantially pore-free, true-density sintered body, Like alumina ceramics, the translucency is not lost due to the inclusion of secondary phases and pores due to impurities, and it has a glass-like appearance that allows light to pass. It is not necessary to apply a surface treatment to the surface, so that the effect of removing deposits and the like by the cleaning can be remarkably enhanced, the purity of the film can be analyzed extremely accurately, and the chemical resistance at the time of cleaning is excellent. In addition, the average crystal grain size of the translucent polycrystalline alumina ceramic is set to 10 to 100 μm, the number of pores can be extremely reduced, and defects inside can be found visually, It is possible to enhance the mechanical strength by reducing the Zumi. On the other hand, the surface has a thickness of 2 to 100 μm.
By covering the surface with the CVD alumina film described above, all the fine pores on the surface are buried and the surface becomes even smoother, so that the effect of removing the deposits and the like by cleaning can be drastically improved.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 安藤 和 千葉県東金市小沼田字戌開1573−８ 東 芝セラミックス株式会社 東金工場内 (72)発明者 永坂 幸行 千葉県東金市小沼田字戌開1573−８ 東 芝セラミックス株式会社 東金工場内 (72)発明者 原田 晴司 千葉県東金市小沼田字戌開1573−８ 東 芝セラミックス株式会社 東金工場内 (56)参考文献 特開 昭53−112912（ＪＰ，Ａ) 実開 昭63−27469（ＪＰ，Ｕ) 理化学辞典第４版（岩波書店、1987年 発行) (58)調査した分野(Int.Cl.7，ＤＢ名) H01L 21/66 H01L 21/205 H01L 21/31 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Kazu Ando Opened 1573-8 Onumada, Togane-shi, Chiba Toshiba Ceramics Co., Ltd. Togane Plant (72) Inventor Yukiyuki Nagasaka Onuma, Togane-shi, Chiba 1573-8 Toshiba Ceramics Co., Ltd., Togane Plant (72) Inventor Haruji Harada Haruka, Onuma City, Togane-shi, Chiba 1573-8 Toshiba Ceramics Co., Ltd., Togane Plant (56) References JP-A-53-112912 (JP, A) Jikai Sho 63-27469 (JP, U) Dictionary of Physical and Chemical Sciences, 4th Edition (Iwanami Shoten, 1987) (58) Fields investigated (Int. Cl. 7 , DB name) H01L 21/66 H01L 21/205 H01L 21/31
Claims (3)
９８以上、平均結晶粒径が１０〜１００μｍの透光性多
結晶アルミナセラミックスからなることを特徴とするダ
ミーウェーハ。1. Purity is 99.9% or more and bulk specific gravity is 3.
A dummy wafer comprising a translucent polycrystalline alumina ceramic having an average crystal grain size of 98 or more and 10 to 100 μm.
ルミナ膜で覆われていることを特徴とする請求項１記載
のダミーウェーハ。2. A method according to claim 1, wherein the front surface is characterized by being covered with a CVD alumina film having a thickness of 2~100μm
Of the dummy wafer.
面であり、かつ、他の片面がダイヤモンドパウダーによSurface and the other side is coated with diamond powder.
る研磨面であることを特徴とする請求項１記載のダミー2. The dummy according to claim 1, wherein the dummy surface is a polished surface.
ウェーハ。Wafer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP34783191A JP3323945B2 (en) | 1991-12-03 | 1991-12-03 | Dummy wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP34783191A JP3323945B2 (en) | 1991-12-03 | 1991-12-03 | Dummy wafer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH05160240A JPH05160240A (en) | 1993-06-25 |
| JP3323945B2 true JP3323945B2 (en) | 2002-09-09 |
Family
ID=18392903
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP34783191A Expired - Fee Related JP3323945B2 (en) | 1991-12-03 | 1991-12-03 | Dummy wafer |
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| Country | Link |
|---|---|
| JP (1) | JP3323945B2 (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100577606B1 (en) * | 2001-01-06 | 2006-05-08 | 삼성전자주식회사 | Method for back up in semiconductor apparatus |
| WO2008079221A1 (en) * | 2006-12-22 | 2008-07-03 | Integrated Materials, Inc. | Polysilicon dummy wafers and process used therewith |
| WO2013187410A1 (en) * | 2012-06-13 | 2013-12-19 | 日本碍子株式会社 | Composite substrate |
| JP5651278B1 (en) | 2013-03-27 | 2015-01-07 | 日本碍子株式会社 | Handle substrate for composite substrates for semiconductors |
| TWI538018B (en) | 2013-03-27 | 2016-06-11 | Ngk Insulators Ltd | Semiconductor substrate for composite substrate |
| TWI629753B (en) | 2013-04-26 | 2018-07-11 | 日本碍子股份有限公司 | Operating substrate for semiconductor composite substrate |
| CN104798177B (en) | 2013-07-18 | 2017-03-15 | 日本碍子株式会社 | The operation substrate of semiconductor composite base plate |
| CN105074870B (en) | 2013-12-25 | 2016-12-07 | 日本碍子株式会社 | Operation substrate, quasiconductor composite base plate, semiconductor circuit base plate and manufacture method thereof |
| KR101597501B1 (en) | 2014-01-06 | 2016-02-24 | 엔지케이 인슐레이터 엘티디 | Handle substrate and composite wafer for semiconductor device |
| CN105190838B (en) | 2014-02-12 | 2017-06-06 | 日本碍子株式会社 | The operation substrate and semiconductor composite base plate of semiconductor composite base plate |
| JP6076486B2 (en) | 2014-02-26 | 2017-02-08 | 日本碍子株式会社 | Handle substrate for composite substrates for semiconductors |
-
1991
- 1991-12-03 JP JP34783191A patent/JP3323945B2/en not_active Expired - Fee Related
Non-Patent Citations (1)
| Title |
|---|
| 理化学辞典第４版（岩波書店、１９８７年発行） |
Also Published As
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|---|---|
| JPH05160240A (en) | 1993-06-25 |
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