JP3314131B2 - Wiring board - Google Patents
Wiring boardInfo
- Publication number
- JP3314131B2 JP3314131B2 JP01452996A JP1452996A JP3314131B2 JP 3314131 B2 JP3314131 B2 JP 3314131B2 JP 01452996 A JP01452996 A JP 01452996A JP 1452996 A JP1452996 A JP 1452996A JP 3314131 B2 JP3314131 B2 JP 3314131B2
- Authority
- JP
- Japan
- Prior art keywords
- thermal expansion
- sio
- glass
- sintered body
- wiring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/1515—Shape
- H01L2924/15153—Shape the die mounting substrate comprising a recess for hosting the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/1615—Shape
- H01L2924/16195—Flat cap [not enclosing an internal cavity]
Description
【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION
【０００１】[0001]
【発明の属する技術分野】本発明は、高熱膨張特性を有
するセラミック焼結体を半導体素子収納用パッケージや
多層基板等の絶縁基板として用いた配線基板に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wiring substrate using a ceramic sintered body having a high thermal expansion characteristic as an insulating substrate such as a package for accommodating a semiconductor element or a multilayer substrate.
【０００２】[0002]
【従来技術】従来より、セラミック製の配線基板は、一
般にアルミナ、ムライト、窒化アルミニウムなどのセラ
ミックス等の電気絶縁基板の表面あるいは内部にタング
ステン、モリブデン等の高融点金属から成る複数個のメ
タライズ配線層が形成され、配線層を多層化する際に
は、絶縁基板のセラミック成形体とその表面に塗布され
たメタライズペーストとを１５００℃以上の温度で同時
に焼成することにより得られている。2. Description of the Related Art Conventionally, a wiring board made of ceramic generally has a plurality of metallized wiring layers made of a refractory metal such as tungsten or molybdenum on or in an electrically insulating substrate such as ceramics such as alumina, mullite and aluminum nitride. Is formed, and when the wiring layers are multilayered, they are obtained by simultaneously firing the ceramic molded body of the insulating substrate and the metallized paste applied to the surface thereof at a temperature of 1500 ° C. or more.
【０００３】また、最近では、タングステンやモリブデ
ンに比較して導体抵抗の小さいＣｕやＡｇ等を配線層と
し、同時焼成が可能な絶縁基板用の材料として、ガラス
とセラミックフィラーからなる、いわゆるガラスセラミ
ック焼結体が用いられつつある。Recently, a so-called glass ceramic made of glass and a ceramic filler has been used as a material for an insulating substrate which can be co-fired as a wiring layer of Cu, Ag or the like having a smaller conductor resistance than tungsten or molybdenum. Sintered bodies are being used.
【０００４】通常、ガラスセラミック焼結体を作製する
に用いられるガラスとしては、ＳｉＯ2 −Ａｌ2 Ｏ3 −
ＣａＯ系、ＳｉＯ2 −Ａｌ2 Ｏ3 −Ｂ2 Ｏ3 系などのガ
ラスで、非晶質ガラスあるいは焼結過程で結晶相を析出
できる結晶化ガラスが用いられ、また、フィラー成分と
しては、Ａｌ2 Ｏ3 、ＳｉＯ2 、石英、クオーツ、クリ
ストバライト、フォルステライト、ペタライトなどが用
いられている。[0004] Usually, as glass used for producing a glass ceramic sintered body, SiO 2 —Al 2 O 3 —
An amorphous glass or a crystallized glass capable of precipitating a crystal phase in a sintering process is used as a glass such as a CaO-based or SiO 2 -Al 2 O 3 -B 2 O 3 -based glass. 2 O 3 , SiO 2 , quartz, quartz, cristobalite, forsterite, petalite and the like are used.
【０００５】一方、配線基板としては、半導体素子を収
納するパッケージとして多用されており、かかるパッケ
ージは、外部電気回路基板の配線導体との接続に際して
は、パッケージの絶縁基板下面に形成された接続端子と
外部電気回路基板の配線導体とを半田等により電気的に
接続される。On the other hand, a wiring board is often used as a package for accommodating a semiconductor element. When connecting to a wiring conductor of an external electric circuit board, such a package has connection terminals formed on the lower surface of an insulating substrate of the package. And the wiring conductor of the external electric circuit board are electrically connected by solder or the like.
【０００６】また、パッケージとしては、半導体素子の
集積度が高まるに従い、半導体素子に形成される電極数
も増大し、これに伴い接続端子数も増大しつつある。そ
こで、パッケージにおける端子の密度を高めるための構
造として、パッケージの下面にコバールなどの金属ピン
を接続したピングリッドアレイ（ＰＧＡ）が最も一般的
であるが、最近では、パッケージの４つの側面に導出さ
れたメタライズ配線層にガルウイング状（Ｌ字状）の金
属ピンが接続されたタイプのクワッドフラットパッケー
ジ（ＱＦＰ）、パッケージの４つの側面に電極パッドを
備え、リードピンがないリードレスチップキャリア（Ｌ
ＣＣ）、さらに絶縁基板の下面に半田からなる球状端子
を多数配置したボールグリッドアレイ（ＢＧＡ）等があ
り、これらの中でもＢＧＡが最も高密度化が可能である
と言われている。In a package, as the degree of integration of a semiconductor device increases, the number of electrodes formed on the semiconductor device increases, and accordingly, the number of connection terminals also increases. Therefore, as a structure for increasing the density of terminals in a package, a pin grid array (PGA) in which metal pins such as Kovar are connected to the lower surface of the package is the most common, but recently, it is provided on four sides of the package. Quadruple package (QFP) in which gull-wing (L-shaped) metal pins are connected to the metallized wiring layer, and a leadless chip carrier (L) having electrode pads on four sides of the package and having no lead pins
CC), and a ball grid array (BGA) in which a large number of spherical terminals made of solder are arranged on the lower surface of the insulating substrate. Of these, the BGA is said to be the most capable of high density.
【０００７】このボールグリッドアレイ（ＢＧＡ）で
は、接続端子が接続パッドに半田などのロウ材からなる
球状端子をロウ付けした端子により構成され、この球状
端子を外部電気回路基板の配線導体に接合させて実装す
ることが行われている。In this ball grid array (BGA), connection terminals are formed by soldering spherical terminals made of a brazing material such as solder to connection pads, and the spherical terminals are joined to wiring conductors of an external electric circuit board. It has been implemented.
【０００８】[0008]
【発明が解決しようとする課題】これらのパッケージに
おける絶縁基板として使用されているアルミナ、ムライ
トなどのセラミックスは、２００ＭＰａ以上の高強度を
有し、しかもメタライズ配線層などとの多層化技術とし
て信頼性の高いことで有用ではあるが、その熱膨張係数
は約４〜７ｐｐｍ／℃程度であるのに対して、パッケー
ジが実装される外部電気回路基板として最も多用されて
いるガラス−エポキシ絶縁層にＣｕ配線層が形成された
プリント基板の熱膨張係数は１１〜１８ｐｐｍ／℃と非
常に大きい。The ceramics such as alumina and mullite used as an insulating substrate in these packages have a high strength of 200 MPa or more, and have a high reliability as a multi-layered technology with metallized wiring layers. Although the thermal expansion coefficient is about 4-7 ppm / ° C., the glass-epoxy insulating layer, which is most frequently used as an external electric circuit board on which the package is mounted, has a high thermal expansion coefficient. The thermal expansion coefficient of the printed circuit board on which the wiring layer is formed is as very large as 11 to 18 ppm / ° C.
【０００９】そのため、半導体素子収納用パッケージの
内部に半導体集積回路素子を収容し、しかる後、プリン
ト基板などの外部電気回路基板に実装した場合、半導体
集積回路素子の作動時に発する熱が絶縁基板と外部電気
回路基板の両方に繰り返し印加されると前記絶縁基板と
外部電気回路基板との間に両者の熱膨張係数の相違に起
因する大きな熱応力が発生し、これにより接続端子と外
部電気回路基板の配線導体との接続不良が発生するとい
う問題があった。この問題は、パッケージにおける端子
数が少ない場合には、さほど大きな影響はないが、端子
数が増加しパッケージが大型化するに従い、その影響が
増大する傾向にある。Therefore, when the semiconductor integrated circuit device is housed in the package for housing the semiconductor device and then mounted on an external electric circuit board such as a printed circuit board, heat generated when the semiconductor integrated circuit device operates is generated by the insulating substrate. When repeatedly applied to both of the external electric circuit boards, a large thermal stress is generated between the insulating substrate and the external electric circuit board due to a difference in the coefficient of thermal expansion between the insulating board and the external electric circuit board. There is a problem that poor connection with the wiring conductor occurs. This problem does not have a significant effect when the number of terminals in the package is small, but the effect tends to increase as the number of terminals increases and the package becomes larger.
【００１０】そこで、本出願人は、先にリチウム珪酸ガ
ラスと熱膨張係数が６ｐｐｍ／℃以上のフィラーとを複
合化させて焼結することにより熱膨張係数の高いリチウ
ム珪酸結晶相を析出させることにより、熱膨張係数が８
〜１８ｐｐｍ／℃のセラミック焼結体が得られることを
提案した。Therefore, the applicant of the present invention has previously attempted to precipitate a lithium silicate crystal phase having a high thermal expansion coefficient by compounding and sintering a lithium silicate glass and a filler having a thermal expansion coefficient of 6 ppm / ° C. or more. Has a coefficient of thermal expansion of 8
It was proposed that a ceramic sintered body of １８18 ppm / ° C. could be obtained.
【００１１】ところが、かかる焼結体を作製した場合、
同一組成のガラスとフィラーを用いても強度や熱膨張係
数が安定しないという問題があった。このばらつきは、
基板等の設計を困難とする要素であり、量産等において
も同一特性の基板を作製することが求められていた。However, when such a sintered body is manufactured,
There is a problem that the strength and the coefficient of thermal expansion are not stable even when glass and filler having the same composition are used. This variation is
This is an element that makes it difficult to design substrates and the like, and it has been required to produce substrates having the same characteristics even in mass production.
【００１２】[0012]
【課題を解決するための手段】本発明者らは、上記リチ
ウム珪酸ガラスを用いて系について種々検討を重ねた結
果、リチウム珪酸ガラスより析出するリチウム珪酸結晶
相に、Ｌｉ2 Ｓｉ2 Ｏ5 で表されるリチウムジシリケー
ト結晶相と、Ｌｉ2 ＳｉＯ3 で表されるリチウムメタシ
リケート結晶相の２種類が存在し、その結晶相の析出量
により焼結体の強度や熱膨張特性が異なることを突き止
めた。The present inventors have conducted various studies on the system using the above-mentioned lithium silicate glass. As a result, the lithium silicate crystal phase precipitated from the lithium silicate glass was changed to Li 2 Si 2 O 5 . It is known that there are two types of lithium disilicate crystal phase represented by and a lithium metasilicate crystal phase represented by Li 2 SiO 3 , and that the strength and thermal expansion characteristics of the sintered body differ depending on the amount of the crystal phase precipitated. I found it.
【００１３】そこで、さらに検討を進めた結果、析出結
晶相において、Ｌｉ2 Ｓｉ2 Ｏ5 が主として析出させる
ことにより、強度の高い焼結体を安定して得られるこ
と、Ｌｉ2 Ｓｉ2 Ｏ5 とＬｉ2 ＳｉＯ3 との複合系にお
いてその析出比率を制御することにより熱膨張係数の微
調整が可能となることを見出し、本発明に至った。[0013] As a result of further studying, in the precipitated crystal phases, by Li 2 Si 2 O 5 causes primarily precipitated, can be obtained a high strength sintered body stable, Li 2 Si 2 O 5 It has been found that fine control of the thermal expansion coefficient can be performed by controlling the precipitation ratio in a composite system of Li 2 SiO 3 and Li 2 SiO 3, and the present invention has been accomplished.
【００１４】即ち、本発明の配線基板は、絶縁基板と、
メタライズ配線層を具備するものであり、その絶縁基板
を、リチウム珪酸ガラスを２０〜８０体積％と、４０℃
〜４００℃における熱膨張係数が６ｐｐｍ／℃以上の金
属酸化物を含むフィラーを８０〜２０体積％の割合で含
む成形体を焼成して得られ、結晶相として少なくともリ
チウム珪酸結晶相を含む焼結体により構成し、該焼結体
のＸ線回折測定チャートにおいて、Ｌｉ2 Ｓｉ2 Ｏ5 の
（１１１）面のピーク強度をＩ1 、Ｌｉ2 ＳｉＯ3 の
（０２０）面のピーク強度をＩ2 とした時、Ｉ1 ／（Ｉ
1 ＋Ｉ2 ）で表されるピーク強度比が０．８５以上であ
り、且つ４０℃〜４００℃における熱膨張係数が８〜１
８ｐｐｍ／℃のセラミック焼結体からなることを特徴と
するものである。That is, the wiring board of the present invention comprises: an insulating substrate;
A metallized wiring layer is provided, and the insulating substrate is made of lithium silicate glass at 20 to 80% by volume at 40 ° C.
A sintered body obtained by calcining a molded body containing a filler containing a metal oxide having a thermal expansion coefficient of 6 ppm / ° C. or more at a temperature of 400 to 400 ° C. at a rate of 80 to 20% by volume, and containing at least a lithium silicate crystal phase as a crystal phase In the X-ray diffraction measurement chart of the sintered body, the peak intensity of the (111) plane of Li 2 Si 2 O 5 was I 1 , and the peak intensity of the (020) plane of Li 2 SiO 3 was I 2. And I 1 / (I
1 + I 2 ) is 0.85 or more, and the coefficient of thermal expansion at 40 ° C. to 400 ° C. is 8 to 1
It is characterized by comprising a ceramic sintered body of 8 ppm / ° C.
【００１５】[0015]
【作用】本発明によれば、配線基板における絶縁基板と
して、リチウム珪酸ガラスと４０℃〜４００℃における
熱膨張係数が６ｐｐｍ／℃以上の金属酸化物との複合物
を焼結して得られたもので、リチウム珪酸ガラスよりＬ
ｉ2 Ｓｉ2 Ｏ5 を主体とする結晶相を析出させることに
より、強度を安定に高めるとともにＬｉ2 ＳｉＯ 3 結晶
相との複合化により熱膨張特性を微調整することができ
る。According to the present invention, the insulating substrate in the wiring board
And lithium silicate glass at 40 ° C to 400 ° C
Composite with metal oxide having a thermal expansion coefficient of 6 ppm / ° C or higher
Is obtained by sintering.
iTwoSiTwoOFiveTo precipitate a crystalline phase mainly composed of
In addition to increasing the strength stably, LiTwoSiO Threecrystal
Thermal expansion characteristics can be fine-tuned by combining with phase
You.
【００１６】この理由は、Ｌｉ2 Ｓｉ2 Ｏ5 は、Ｌｉ2
ＳｉＯ3 に比較して熱力学的に安定な結晶構造であり、
しかもＬｉ2 Ｓｉ2 Ｏ5 の方が分子量が大きく、結晶の
体積が大きくなっている。よって、Ｌｉ2 Ｏの量で一定
であってもＬｉ2 ＳｉＯ3 が析出するよりＬｉ2 Ｓｉ2
Ｏ5 が析出することにより、焼結体中に占めるリチウム
珪酸結晶相の体積比率を大きくできるために、セラミッ
ク焼結体としての結晶化度が高くなることにより強度が
高くなると考えられる。[0016] The reason for this is that, Li 2 Si 2 O 5 is, Li 2
It has a crystal structure that is thermodynamically stable compared to SiO 3 ,
Moreover, Li 2 Si 2 O 5 has a larger molecular weight and a larger crystal volume. Therefore, Li 2 Si 2 than Li 2 be constant in an amount of O Li 2 SiO 3 is deposited
Since the volume ratio of the lithium silicate crystal phase occupying in the sintered body can be increased by the precipitation of O 5, it is considered that the strength is increased by increasing the crystallinity of the ceramic sintered body.
【００１７】また、Ｌｉ2 Ｓｉ2 Ｏ5 は、熱膨張係数が
１１ｐｐｍ／℃程度であり、Ｌｉ2ＳｉＯ3 は１３ｐｐ
ｍ／℃程度の特性を有することから、これらの結晶相の
存在割合を制御することにより熱膨張係数の微調整が可
能となる。Li 2 Si 2 O 5 has a thermal expansion coefficient of about 11 ppm / ° C., and Li 2 SiO 3 has a thermal expansion coefficient of 13 pp.
Since it has a characteristic of about m / ° C., the thermal expansion coefficient can be finely adjusted by controlling the proportion of these crystal phases.
【００１８】これにより、ガラス−エポキシ基板などの
プリント基板からなる外部電気回路に対して実装される
半導体素子収納用パッケージ等の配線基板における絶縁
基板として上記のセラミック焼結体を用いることによ
り、絶縁基板と外部電気回路基板との間に両者の熱膨張
係数の差を小さく制御でき、その結果、絶縁基板と外部
電気回路基板の熱膨張係数の相違に起因する熱応力によ
って端子が外部電気回路の配線導体とが接続不良を起こ
すことがなく、これによっても容器内部に収容する半導
体素子と外部電気回路とを長期間にわたり正確に、且つ
強固に電気的接続させることが可能となる。By using the above ceramic sintered body as an insulating substrate in a wiring board such as a package for housing a semiconductor element mounted on an external electric circuit formed of a printed board such as a glass-epoxy board, The difference in the coefficient of thermal expansion between the board and the external electric circuit board can be controlled to be small, and as a result, the terminal is connected to the external electric circuit by the thermal stress caused by the difference in the coefficient of thermal expansion between the insulating board and the external electric circuit board. The wiring conductor does not cause a connection failure, and thus the semiconductor element housed in the container and the external electric circuit can be accurately and firmly electrically connected for a long period of time.
【００１９】また、パッケージの内部配線として使用さ
れるＣｕの熱膨張係数１８ｐｐｍ／℃に対しても近似の
熱膨張係数を有するため、メタライズ配線の絶縁基板へ
の密着性等の信頼性を高めることができる。Further, since the thermal expansion coefficient of Cu used as the internal wiring of the package is similar to the thermal expansion coefficient of 18 ppm / ° C., the reliability such as the adhesion of the metallized wiring to the insulating substrate is improved. Can be.
【００２０】[0020]
【発明の実施の形態】以下、本発明を一実施例を示す添
付図面に基づき詳細に説明する。図１は、配線基板とし
てＢＧＡ型の半導体素子収納用パッケージとその実装構
造の一実施例を示す図である。このパッケージは、絶縁
基板の表面あるいは内部にメタライズ配線層が配設され
た、いわゆる配線基板を基礎的構造とするものであり、
Ａは半導体素子収納用パッケージ、Ｂは外部電気回路基
板をそれぞれ示す。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below in detail with reference to the accompanying drawings showing an embodiment. FIG. 1 is a diagram showing an embodiment of a BGA type semiconductor element housing package as a wiring board and its mounting structure. This package is based on a so-called wiring board with a metallized wiring layer disposed on the surface or inside of an insulating substrate,
A indicates a semiconductor element storage package, and B indicates an external electric circuit board.
【００２１】半導体素子収納用パッケージＡは、絶縁基
板１の表面および内部には、メタライズ配線層２が形成
され、また絶縁基板１と蓋体３により形成されるキャビ
ティ内には、半導体素子４が気密に収容されている。半
導体素子４は、メタライズ配線層２とワイヤ５により電
気的に接続されている。In the package A for housing a semiconductor element, a metallized wiring layer 2 is formed on the surface and inside of the insulating substrate 1, and a semiconductor element 4 is placed in a cavity formed by the insulating substrate 1 and the lid 3. It is housed airtight. The semiconductor element 4 is electrically connected to the metallized wiring layer 2 by wires 5.
【００２２】また、絶縁基板１の下面にはメタライズ配
線層２を通じて半導体素子４を電気的に接続された多数
の接続パッド６が被着形成されている。この接続パッド
６の表面には半田（錫−鉛合金）などのロウ材から成る
突起状端子７が外部電気回路基板Ｂへの接続端子として
取着されている。On the lower surface of the insulating substrate 1, a large number of connection pads 6 electrically connected to the semiconductor element 4 through the metallized wiring layer 2 are formed. On the surface of the connection pad 6, a protruding terminal 7 made of a brazing material such as solder (tin-lead alloy) is attached as a connection terminal to the external electric circuit board B.
【００２３】一方、外部電気回路基板Ｂは、絶縁体８と
配線導体９をを具備し、絶縁体８は、少なくとも有機樹
脂を含む材料からなるプリント基板からなる。具体的に
は、ガラス−エポキシ系複合材料などのように４０〜４
００℃における熱膨張係数が１２〜１６ｐｐｍ／℃の絶
縁材料からなる。また、この回路基板Ｂの表面に形成さ
れる配線導体９は、絶縁体との熱膨張係数の整合性と、
良電気伝導性の点で、通常、Ｃｕ、Ａｕ、Ａｌ、Ｎｉ、
Ｐｂ−Ｓｎなどの金属導体からなる。On the other hand, the external electric circuit board B has an insulator 8 and a wiring conductor 9, and the insulator 8 is a printed board made of a material containing at least an organic resin. Specifically, 40 to 4 such as a glass-epoxy composite material
It is made of an insulating material having a thermal expansion coefficient of 12 to 16 ppm / ° C. at 00 ° C. In addition, the wiring conductor 9 formed on the surface of the circuit board B has a thermal expansion coefficient matching with an insulator,
In terms of good electrical conductivity, usually Cu, Au, Al, Ni,
It is made of a metal conductor such as Pb-Sn.
【００２４】半導体素子収納用パッケージＡを外部電気
回路基板Ｂに実装するには、パッケージＡの絶縁基板１
下面の突起状端子７を外部電気回路基板Ｂの配線導体９
上に載置当接させ、ロウ材等により外部電気回路基板Ｂ
上に実装される。この時、配線導体９の表面には端子７
とのロウ材による接続を容易に行うためにロウ材が被着
形成されていることが望ましい。In order to mount the semiconductor element housing package A on the external electric circuit board B, the insulating substrate 1 of the package A
The projecting terminals 7 on the lower surface are connected to the wiring conductors 9 of the external electric circuit board B.
Placed on top of it and contacted with an external electric circuit board B with brazing material, etc.
Implemented above. At this time, the terminal 7 is provided on the surface of the wiring conductor 9.
It is desirable that a brazing material be adhered and formed in order to easily perform connection with the brazing material.
【００２５】本発明によれば、このような外部電気回路
基板Ｂの表面に実装される半導体素子収納用パッケージ
等の配線基板における絶縁基板１が４０〜４００℃の温
度範囲における熱膨張係数が８〜１８ｐｐｍ／℃、特に
９〜１４ｐｐｍ／℃の焼結体からなることが重要であ
る。これは、前述した外部電気回路基板Ｂとの熱膨張差
により熱応力の発生を緩和し、外部電気回路基板Ｂとパ
ッケージＡとの電気的接続状態を長期にわたり良好な状
態に維持するために重要であり、この熱膨張係数が８ｐ
ｐｍ／℃より小さいか、あるいは１８ｐｐｍ／℃より大
きいと、いずれも熱膨張差に起因する熱応力が大きくな
り、外部電気回路基板ＢとパッケージＡとの電気的接続
状態が悪化することを防止することができない。According to the present invention, the insulating substrate 1 in a wiring board such as a package for housing a semiconductor element mounted on the surface of the external electric circuit board B has a thermal expansion coefficient of 8 in a temperature range of 40 to 400 ° C. It is important to form a sintered body of １８18 ppm / ° C., particularly 9-14 ppm / ° C. This is important to alleviate the generation of thermal stress due to the difference in thermal expansion between the external electric circuit board B and the external electric circuit board B, and to maintain a good electrical connection between the external electric circuit board B and the package A for a long time. And the coefficient of thermal expansion is 8p
If it is smaller than pm / ° C. or larger than 18 ppm / ° C., the thermal stress caused by the difference in thermal expansion is increased to prevent the electrical connection between the external electric circuit board B and the package A from deteriorating. Can not do.
【００２６】なお、絶縁基板の熱膨張係数が８〜１８ｐ
ｐｍ／℃と大きくなるに伴い、Ｓｉを基板とする半導体
素子との熱膨張差が逆に大きくなってしまう。そのた
め、接着材としては、半導体素子が熱膨張差により剥離
しないように半導体素子の絶縁基板への接着材を適宜選
択することが必要である。望ましくは、その熱膨張差を
緩衝可能な可撓性の材料により接着することが望まし
く、例えば、エポキシ系、ポリイミド系などの有機系接
着材や、場合によってはこれにＡｇなどの金属を配合し
たものが好適に使用される。The thermal expansion coefficient of the insulating substrate is 8 to 18 p.
With the increase in pm / ° C., the difference in thermal expansion between the semiconductor element and the semiconductor element using Si as the substrate increases. Therefore, it is necessary to appropriately select an adhesive for the semiconductor element to the insulating substrate so that the semiconductor element does not peel off due to a difference in thermal expansion. Desirably, it is desirable to bond with a flexible material capable of buffering the difference in thermal expansion. For example, an epoxy-based or polyimide-based organic adhesive or a metal such as Ag may be blended in some cases. Are preferably used.
【００２７】本発明によれば、このような高熱膨張係数
を有する絶縁基板を構成する焼結体として、リチウム珪
酸ガラス２０〜８０体積％と、４０℃〜４００℃におけ
る熱膨張係数が６ｐｐｍ／℃以上の金属酸化物を含むフ
ィラー成分を８０〜２０体積％含む成形体を焼成してな
るセラミック焼結体により構成するものである。このガ
ラスとフィラー成分の量を上記の範囲に限定したのは、
ガラス成分量が２０体積％より少ない、言い換えればフ
ィラー成分が８０体積％より多いと液相焼結することが
できずに高温で焼成する必要があり、その場合、メタラ
イズ同時焼成においてメタライズが溶融してしまう。ま
た、ガラスが８０体積％より多い、言い換えるとフィラ
ー成分が２０体積％より少ないと焼結体の特性がガラス
の特性に大きく依存してしまい、材料特性の制御が困難
となるとともに、焼結開始温度が低くなるために配線導
体と同時焼成できないといった問題が生じる。また、原
料のコストも高くなる。According to the present invention, as the sintered body constituting the insulating substrate having such a high thermal expansion coefficient, lithium silicate glass of 20 to 80% by volume and a thermal expansion coefficient at 40 ° C. to 400 ° C. of 6 ppm / ° C. It is constituted by a ceramic sintered body obtained by firing a molded body containing 80 to 20% by volume of the filler component containing the metal oxide. The reason for limiting the amounts of the glass and the filler component to the above ranges is as follows.
If the amount of the glass component is less than 20% by volume, in other words, if the amount of the filler component is more than 80% by volume, liquid phase sintering cannot be performed and it is necessary to fire at a high temperature. Would. On the other hand, if the glass content is more than 80% by volume, in other words, if the filler component is less than 20% by volume, the properties of the sintered body greatly depend on the properties of the glass, making it difficult to control the material properties. Since the temperature is low, there is a problem that it cannot be fired simultaneously with the wiring conductor. Also, the cost of the raw material increases.
【００２８】また、本発明において用いられるリチウム
珪酸ガラスとしては、Ｌｉ2 Ｏを５〜３０重量％、特に
５〜２０重量％の割合で含有するものであり、かかるガ
ラスから焼結過程で高熱膨張係数を有するリチウム珪酸
を析出させることができる。なお、Ｌｉ2 Ｏ中の含有量
が５重量％より低いと、焼成時にリチウム珪酸の結晶の
生成量が少なくなり高熱膨張化が期待できず、３０重量
％より多いと誘電正接が１００×１０-4を越える傾向に
あるためである。また、リチウム珪酸ガラスの屈伏点は
Ｃｕ等のメタライズとの同時焼結性および焼結時の有機
系バインダーの除去性を考慮すれば、４００℃〜８００
℃、特に４００〜６５０℃であることが望ましい。The lithium silicate glass used in the present invention contains Li 2 O in an amount of 5 to 30% by weight, particularly 5 to 20% by weight. Lithium silicic acid having a coefficient can be deposited. If the content in Li 2 O is lower than 5% by weight, the amount of lithium silicic acid crystals generated during sintering decreases and high thermal expansion cannot be expected. If it exceeds 30% by weight, the dielectric loss tangent is 100 × 10 −. This is because it tends to exceed 4 . Further, the yield point of the lithium silicate glass is 400 ° C. to 800 ° C. in consideration of simultaneous sinterability with metallization of Cu or the like and removability of an organic binder during sintering.
C., preferably 400 to 650.degree.
【００２９】また、結晶性ガラスの４０℃〜４００℃に
おける熱膨張係数が６〜１８ｐｐｍ／℃、特に、７〜１
３ｐｐｍ／℃であることが望ましい。これは、熱膨張係
数が上記範囲を逸脱するとフィラーとの熱膨張差が生
じ、焼結体の強度の低下の原因になる。また、フィラー
の熱膨張係数が６ｐｐｍ／℃未満では、焼結体の熱膨張
係数を８〜１８ｐｐｍ／℃にすることも困難となる。上
記の特性を満足する結晶性ガラスとしては、例えばＳｉ
Ｏ2 −Ｌｉ2 Ｏ−Ａｌ2 Ｏ3 、ＳｉＯ2 −Ｌｉ2 Ｏ−Ａ
ｌ2 Ｏ3 −ＭｇＯ−ＴｉＯ2 ＳｉＯ2 −Ｌｉ2 Ｏ−Ａｌ2 Ｏ3 −ＭｇＯ−Ｎａ2 Ｏ−
Ｆ ＳｉＯ2 −Ｌｉ2 Ｏ−Ａｌ2 Ｏ3 −Ｋ2 Ｏ−Ｎａ2 Ｏ−
ＺｎＯ、ＳｉＯ2 −Ｌｉ2 Ｏ−Ａｌ2 Ｏ3 −Ｋ2 Ｏ−Ｐ
2 Ｏ5 ＳｉＯ2 −Ｌｉ2 Ｏ−Ａｌ2 Ｏ3 −Ｋ2 Ｏ−Ｐ2 Ｏ5 −
ＺｎＯ−Ｎａ2 Ｏ ＳｉＯ2 −Ｌｉ2 Ｏ−ＭｇＯ、ＳｉＯ2 −Ｌｉ2 Ｏ−Ｚ
ｎＯ、等の組成物が挙げられ、このうち、ＳｉＯ2 は本
発明によれば、リチウム珪酸を形成するための必須の成
分であり、ＳｉＯ2 はガラス全量中、６０〜８５重量％
の割合で存在し、ＳｉＯ2 とＬｉ2 Ｏとの合量がガラス
全量中、６５〜９５重量％であることがリチウム珪酸結
晶を析出させる上で望ましい。なお、このリチウム珪酸
ガラス中には、Ｂ2 Ｏ3 は１重量％以下であることが望
ましい。The crystalline glass has a coefficient of thermal expansion at 40 ° C. to 400 ° C. of 6 to 18 ppm / ° C., particularly preferably 7 to 1 ppm.
Desirably, it is 3 ppm / ° C. This is because if the coefficient of thermal expansion deviates from the above range, a difference in thermal expansion with the filler occurs, causing a reduction in the strength of the sintered body. If the coefficient of thermal expansion of the filler is less than 6 ppm / ° C., it is also difficult to make the coefficient of thermal expansion of the sintered body 8 to 18 ppm / ° C. As the crystalline glass satisfying the above characteristics, for example, Si
O 2 -Li 2 O-Al 2 O 3, SiO 2 -Li 2 O-A
l 2 O 3 -MgO-TiO 2 SiO 2 -Li 2 O-Al 2 O 3 -MgO-Na 2 O-
F SiO 2 —Li 2 O—Al 2 O 3 —K 2 O—Na 2 O—
ZnO, SiO 2 -Li 2 O-Al 2 O 3 -K 2 O-P
2 O 5 SiO 2 -Li 2 O -Al 2 O 3 -K 2 O-P 2 O 5 -
ZnO-Na 2 O SiO 2 -Li 2 O-MgO, SiO 2 -Li 2 O-Z
nO, the composition may be mentioned the like, of which, according to the SiO 2 is present invention, an essential component for forming a lithium silicate, SiO 2 is in the glass the total amount, 60 to 85 wt%
It is desirable for the total amount of SiO 2 and Li 2 O to be 65 to 95% by weight based on the total amount of glass in order to precipitate lithium silicate crystals. In this lithium silicate glass, B 2 O 3 is desirably 1% by weight or less.
【００３０】一方、上記リチウム珪酸ガラスと複合化さ
せる４０℃〜４００℃における熱膨張係数が６ｐｐｍ／
℃以上の金属酸化物のフィラー成分としては、クリスト
バライト（ＳｉＯ2 ）、クォーツ（ＳｉＯ2 ）、トリジ
マイト（ＳｉＯ2 ）、フォルステライト（２ＭｇＯ・Ｓ
ｉＯ2 ）、スピネル（ＭｇＯ・Ａｌ2 Ｏ3 ）、ウォラス
トナイト（ＣａＯ・ＳｉＯ2 ）、モンティセラナイト
（ＣａＯ・ＭｇＯ・ＳｉＯ2 ）、ネフェリン（Ｎａ2 Ｏ
・Ａｌ2 Ｏ3 ・ＳｉＯ2 ）、リチウムシリケート（Ｌｉ
2 Ｏ・ＳｉＯ2 ）、ジオプサイド（ＣａＯ・ＭｇＯ・２
ＳｉＯ2 ）、メルビナイト（３ＣａＯ・ＭｇＯ・２Ｓｉ
Ｏ2 ）、アケルマイト（２ＣａＯ・ＭｇＯ・２Ｓｉ
Ｏ2 ）、マグネシア（ＭｇＯ）、アルミナ（Ａｌ
2 Ｏ3 ）、カーネギアイト（Ｎａ2 Ｏ・Ａｌ2 Ｏ3 ・２
ＳｉＯ2 ）、エンスタタイト（ＭｇＯ・ＳｉＯ2 ）、ホ
ウ酸マグネシウム（２ＭｇＯ・Ｂ2 Ｏ3 ）、セルシアン
（ＢａＯ・Ａｌ2 Ｏ3 ・２ＳｉＯ2 ）、Ｂ2 Ｏ3 ・２Ｍ
ｇＯ・２ＳｉＯ2 、ガーナイト（ＺｎＯ・Ａｌ
2 Ｏ3 ）、ペタライト（ＬｉＡｌＳｉ4 Ｏ10）の群から
選ばれる少なくとも１種以上が挙げられる。これらの中
でも特に８ｐｐｍ／℃以上の金属酸化物が良い。また、
上記フィラー中には、その添加により最終焼結体の熱膨
張係数が１８ｐｐｍ／℃を越える場合がある。その場合
には、熱膨張係数が小さいフィラーと混合して熱膨張係
数を適宜制御することが必要である。On the other hand, the thermal expansion coefficient at 40 ° C. to 400 ° C. to be combined with the lithium silicate glass is 6 ppm /
The filler component of the metal oxide having a temperature of not less than ℃ is cristobalite (SiO 2 ), quartz (SiO 2 ), tridymite (SiO 2 ), forsterite (2MgOS
iO 2), spinel (MgO · Al 2 O 3) , wollastonite (CaO · SiO 2), Monty Sera Knight (CaO · MgO · SiO 2) , nepheline (Na 2 O
・ Al 2 O 3 .SiO 2 ), lithium silicate (Li
2 O.SiO 2 ), diopside (CaO.MgO.2)
SiO 2 ), melvinite (3CaO.MgO.2Si)
O 2 ), Akermite (2CaO.MgO.2Si)
O 2 ), magnesia (MgO), alumina (Al
2 O 3), Kanegiaito (Na 2 O · Al 2 O 3 · 2
SiO 2 ), enstatite (MgO.SiO 2 ), magnesium borate (2MgO.B 2 O 3 ), celsian (BaO.Al 2 O 3 .2SiO 2 ), B 2 O 3 .2M
gO.2SiO 2 , garnite (ZnO.Al
2 O 3 ) and petalite (LiAlSi 4 O 10 ). Among them, a metal oxide of 8 ppm / ° C. or more is particularly preferable. Also,
The thermal expansion coefficient of the final sintered body may exceed 18 ppm / ° C. due to the addition of the filler. In that case, it is necessary to appropriately control the coefficient of thermal expansion by mixing with a filler having a small coefficient of thermal expansion.
【００３１】このリチウム珪酸ガラスとフィラーとの混
合物は、適当な成形の有機樹脂バインダーを添加した
後、所望の成形手段、例えば、ドクターブレード、圧延
法、金型プレス等によりシート状に任意の形状に成形
後、焼成する。The mixture of the lithium silicate glass and the filler may be added to an appropriate organic resin binder and then formed into a desired sheet shape by a desired forming means, for example, a doctor blade, a rolling method, a mold press or the like. After forming into a shape, it is fired.
【００３２】焼成にあたっては、まず、成形のために配
合したバインダー成分を除去する。バインダーの除去
は、７００℃前後の大気雰囲気中で行われるが、配線導
体としてＣｕを用いる場合には、水蒸気を含有する１０
０〜７００℃の窒素雰囲気中で行われる。この時、成形
体の収縮開始温度は７００〜８５０℃程度であることが
望ましく、かかる収縮開始温度がこれより低いとバイン
ダーの除去が困難となるため、成形体中の結晶化ガラス
の特性、特に屈伏点を前述したように制御することが必
要となる。In firing, first, the binder component blended for molding is removed. The removal of the binder is performed in an air atmosphere at about 700 ° C. When Cu is used as the wiring conductor, water containing 10% water is used.
This is performed in a nitrogen atmosphere at 0 to 700 ° C. At this time, the shrinkage start temperature of the molded body is preferably about 700 to 850 ° C. If the shrinkage start temperature is lower than this, it becomes difficult to remove the binder. It is necessary to control the yield point as described above.
【００３３】焼成は、８５０℃〜１３００℃の酸化性雰
囲気中で行われ、これにより相対密度９０％以上まで緻
密化される。この時の焼成温度が８５０℃より低いと緻
密化することができず、１３００℃を越えるとメタライ
ズ配線層との同時焼成でメタライズ層が溶融してしま
う。但し、配線導体としてＣｕを用いる場合には、８５
０〜１０５０℃の窒素などの非酸化性雰囲気中で行われ
る。The sintering is performed in an oxidizing atmosphere at 850 ° C. to 1300 ° C., thereby densifying to a relative density of 90% or more. If the firing temperature at this time is lower than 850 ° C., densification cannot be achieved, and if it exceeds 1300 ° C., the metallized layer is melted by simultaneous firing with the metallized wiring layer. However, when Cu is used as the wiring conductor, 85
This is performed in a non-oxidizing atmosphere such as nitrogen at 0 to 1050 ° C.
【００３４】本発明によれば、このようにして作製され
たセラミック焼結体中において、リチウム珪酸ガラスか
ら析出したリチウム珪酸結晶相が、Ｌｉ2 Ｓｉ2 Ｏ5 で
表されるリチウムジシリケート結晶相であるか、あるい
はＬｉ2 Ｓｉ2 Ｏ5 結晶相と、Ｌｉ2 ＳｉＯ3 で表され
るリチウムメタシリケート結晶相との複合結晶相であ
り、該焼結体のＸ線回折測定チャートにおいて、Ｌｉ2
Ｓｉ2 Ｏ5 の（１１１）面のピーク強度をＩ1 、Ｌｉ2
ＳｉＯ3 の（０２０）面のピーク強度をＩ2 とした時、
Ｉ1 ／（Ｉ1 ＋Ｉ2 ）で表されるピーク強度比が０．８
５以上、特に０．９以上であることが大きな特徴であ
る。このヒーク強度比０．８５以上とは、体積比率でＬ
ｉ2 Ｓｉ2 Ｏ5 が全リチウム珪酸結晶相のうちのほぼ５
０体積％以上に相当する。このピーク強度比を上記の範
囲に限定したのは、上記ピーク強度比が０．８５より小
さいと、リチウム珪酸結晶相の析出効果として強度の向
上が望めないためである。According to the present invention, in the ceramic sintered body thus produced, the lithium silicate crystal phase precipitated from the lithium silicate glass is changed to the lithium disilicate crystal phase represented by Li 2 Si 2 O 5. Or a composite crystal phase of a Li 2 Si 2 O 5 crystal phase and a lithium metasilicate crystal phase represented by Li 2 SiO 3. In the X-ray diffraction measurement chart of the sintered body, Li 2
The peak intensity of the (111) plane of Si 2 O 5 is represented by I 1 , Li 2
When the peak intensity of the (020) plane of SiO 3 is defined as I 2 ,
When the peak intensity ratio represented by I 1 / (I 1 + I 2 ) is 0.8
It is a great feature that it is 5 or more, especially 0.9 or more. The heak strength ratio of 0.85 or more means that the volume ratio is L
i 2 Si 2 O 5 is approximately 5% of all lithium silicate crystal phases.
It corresponds to 0% by volume or more. The reason why the peak intensity ratio is limited to the above range is that if the peak intensity ratio is smaller than 0.85, no improvement in strength can be expected as a precipitation effect of the lithium silicate crystal phase.
【００３５】このようになＬｉ2 Ｓｉ2 Ｏ5 結晶相の析
出は、例えば、原料として用いるリチウム珪酸ガラスの
結晶化度に依存する傾向にあり、後述する実施例から明
らかなように、原料として用いるリチウム珪酸ガラスの
結晶化度が１５％以下、特に５％以下の場合、Ｌｉ2 Ｓ
ｉ2 Ｏ5 結晶相が５０体積％以上析出する傾向にあり、
ガラス中に幾分かの結晶が含まれその結晶化度が１５％
を越えるとＬｉ2 Ｓｉ2 Ｏ5 よりもＬｉ2 ＳｉＯ3 の方
が多量に析出する傾向にある。また、Ｌｉ2 Ｓｉ2 Ｏ5
の析出量は、用いるフィラー成分の種類や量によっても
変化する場合があり、例えば、後述する実施例から明ら
かなように、フィラーとしてクォーツを用いた場合、そ
の量が少なくなると、Ｌｉ2 Ｓｉ2 Ｏ5 の析出量が少な
くなる傾向にあることがわかる。このように、Ｌｉ2 Ｓ
ｉ2 Ｏ5 の析出量は原料やフィラー等に応じ適宜調整す
ることが必要となる。Such precipitation of the Li 2 Si 2 O 5 crystal phase tends to depend on, for example, the crystallinity of the lithium silicate glass used as a raw material. When the crystallinity of the lithium silicate glass used is 15% or less, particularly 5% or less, Li 2 S
i 2 O 5 crystal phase tends to precipitate at 50% by volume or more,
Glass contains some crystals and its crystallinity is 15%
Towards Li 2 SiO 3 than over the Li 2 Si 2 O 5 and tends to a large amount of precipitation. Also, Li 2 Si 2 O 5
The precipitation amount may also vary depending on the type and amount of the filler component used.For example, as is clear from the examples described below, when quartz is used as the filler, if the amount is small, Li 2 Si 2 It can be seen that the amount of O 5 deposited tends to decrease. Thus, Li 2 S
It is necessary to appropriately adjust the amount of i 2 O 5 deposited according to the raw materials, fillers and the like.
【００３６】最終的に得られるセラミック焼結体中に
は、上記の結晶以外に、フィラーの基づく結晶相や、ガ
ラスとフィラーとの反応により生成した結晶相、あるい
はフィラー成分が分解して生成した結晶相等が存在し、
これらの結晶相の粒界にはガラス相がわずかに存在す
る。In the ceramic sintered body finally obtained, in addition to the above crystals, a crystal phase based on a filler, a crystal phase formed by a reaction between glass and the filler, or a filler component is formed by decomposition. There are crystalline phases etc.
A glass phase is slightly present at the grain boundaries of these crystal phases.
【００３７】なお、本発明の絶縁基板において、Ｃｕ、
Ａｇ、Ｎｉ、Ｐｄ、Ａｕのうちの１種以上からなるメタ
ライズ配線層を配設した配線基板を製造するには、絶縁
基板を構成する前述したような結晶化ガラスとフィラー
からなる原料粉末に適当な有機バインダー、可塑剤、溶
剤を添加混合して泥漿物を作るとともに該泥漿物をドク
ターブレード法やカレンダーロール法を採用することに
よってグリーンシート（生シート）と作製する。そし
て、メタライズ配線層として、適当な金属粉末に有機バ
インダー、可塑剤、溶剤を添加混合して得たメタライズ
ペーストを前記グリーンシートに周知のスクリーン印刷
法により所定パターンに印刷塗布する。また、場合によ
っては、前記グリーンシートに適当な打ち抜き加工して
スルーホールを形成し、このホール内にもメタライズペ
ーストを充填する。そしてこれらのグリーンシートを複
数枚積層し、グリーンシートとメタライズとを同時焼成
することにより多層構造の配線基板を作製することがで
きる。In the insulating substrate of the present invention, Cu,
In order to manufacture a wiring board provided with a metallized wiring layer made of one or more of Ag, Ni, Pd, and Au, it is necessary to use a raw material powder comprising a crystallized glass and a filler as described above, which constitutes an insulating substrate. An organic binder, a plasticizer, and a solvent are added and mixed to form a slurry, and the slurry is formed into a green sheet (raw sheet) by employing a doctor blade method or a calendar roll method. Then, as a metallized wiring layer, a metallized paste obtained by adding an organic binder, a plasticizer, and a solvent to an appropriate metal powder and mixing is printed and applied on the green sheet in a predetermined pattern by a known screen printing method. In some cases, the green sheet is appropriately punched to form a through hole, and the hole is filled with a metallizing paste. By laminating a plurality of these green sheets and simultaneously firing the green sheets and metallization, a wiring board having a multilayer structure can be manufactured.
【００３８】以下、本発明をさらに具体的な例で説明す
る。Hereinafter, the present invention will be described with more specific examples.
【００３９】[0039]
【実施例】結晶性ガラスとして、重量比率で７４％Ｓ
ｉＯ2 −１４％Ｌｉ2 Ｏ−４％Ａｌ2 Ｏ3 −２％Ｐ2 Ｏ
5 −２％Ｋ2 Ｏ−２％ＺｎＯ−２％Ｎａ2 Ｏ（屈伏点４
８０℃）の組成からなるが、結晶化度の異なるリチウム
珪酸ガラスを用いて、この結晶性ガラス３５体積％にフ
ォルステライト３０体積％、クォーツ３５体積％の割合
で加え、この混合物を粉砕後、有機バインダーを添加し
て十分に混合した後、１軸プレス法により３．５×３．
５×１５ｍｍの形状の成形体を作製し、この成形体を７
００℃のＮ2 ＋Ｈ2 Ｏ中で脱バインダ処理した後、窒素
雰囲気中で９００℃、１時間焼成して焼結体を作製し
た。EXAMPLE 74% S by weight as crystalline glass
iO 2 -14% Li 2 O-4% Al 2 O 3 -2% P 2 O
5 -2% K 2 O-2 % ZnO-2% Na 2 O ( yield point 4
80 ° C.), but using lithium silicate glass having a different crystallinity, and adding 35% by volume of forsterite and 35% by volume of quartz to 35% by volume of this crystalline glass. After adding the organic binder and mixing well, 3.5 × 3.
A molded body having a shape of 5 × 15 mm was prepared, and this molded body was
After a binder removal treatment in N 2 + H 2 O at 00 ° C., the sintered body was fired at 900 ° C. for 1 hour in a nitrogen atmosphere to produce a sintered body.
【００４０】上記のようにして得られた焼結体に対して
４０〜４００℃の熱膨張係数を測定し表１に示した。ま
た、この焼結体を乳鉢で粉砕し、２θ＝１０〜４０°、
２°／ｍｉｎの条件でＸ線回折測定し、その回折図から
Ｌｉ2 Ｓｉ2 Ｏ5 （Ｌ２Ｓ）の（１１１）面のピーク
（２θ＝２４．８４２°）の強度Ｉ1 と、Ｌｉ2 ＳｉＯ
3 （ＬＳ）の（０２０）面のピーク（２θ＝１８．９０
５°）の強度Ｉ2 とを測定して、Ｉ1 ／（Ｉ1 ＋Ｉ2 ）
の強度比を求めた。The thermal expansion coefficient of the sintered body obtained as described above at 40 to 400 ° C. was measured and is shown in Table 1. Further, this sintered body was pulverized in a mortar, and 2θ = 10 to 40 °,
X-ray diffraction measurement was performed under the condition of 2 ° / min. From the diffraction diagram, the intensity I 1 of the peak (2θ = 24.842 °) of the (111) plane of Li 2 Si 2 O 5 (L2S) and Li 2 SiO
3 (LS) (020) plane peak (2θ = 18.90)
5 °) and intensity I 2 as measured in, I 1 / (I 1 + I 2)
Was determined.
【００４１】また、焼結体を直径６０ｍｍ、厚さ２ｍｍ
に加工し、ＪＩＳＣ２１４１の手法で比誘電率と誘電損
失を求めた。測定はＬＣＲメータ（Ｙ．Ｈ．Ｐ４２８４
Ａ）を用いて行い、１ＭＨｚ，１．０Ｖｒｓｍの条件で
２５℃における静電容量を測定し、この静電容量から２
５℃における比誘電率を測定した。また、ＪＩＳＲ１６
０１に基づき３点曲げ強度試験を行いその結果を表１に
示した。A sintered body having a diameter of 60 mm and a thickness of 2 mm
And the relative dielectric constant and dielectric loss were determined by the method of JISC2141. The measurement was performed using an LCR meter (YHP4284).
A), the capacitance at 25 ° C. was measured under the conditions of 1 MHz and 1.0 Vrsm.
The relative dielectric constant at 5 ° C. was measured. Also, JISR16
A three-point bending strength test was carried out based on No. 01, and the results are shown in Table 1.
【００４２】（配線基板の作製）次に、表１における各
原料組成物を用いて、溶媒としてトルエンとイソプロピ
ルアルコール、バインダーとしてアクリル樹脂、可塑剤
としてＤＢＰ（ジブチルフタレート）を用いてドクター
ブレード法により厚み５００μｍのグリーンシートを作
製した。(Preparation of Wiring Board) Next, using each of the raw material compositions shown in Table 1, toluene and isopropyl alcohol as a solvent, an acrylic resin as a binder, DBP (dibutyl phthalate) as a plasticizer, and a doctor blade method. A green sheet having a thickness of 500 μm was prepared.
【００４３】このグリーンシートの表面にＣｕメタライ
ズペーストをスクリーン印刷法に基づきメタライズ配線
層を塗布した。また、グリーンシートの所定箇所にスル
ーホールを形成しスルーホール内が最終的に基板の下面
に露出するように形成し、そのスルーホール内にもＣｕ
メタライズペーストを充填した。そして、メタライズペ
ーストが塗布されたグリーンシートをスルーホールの位
置合わせを行いながら６枚積層し圧着した。A metallized wiring layer was coated on the surface of the green sheet with a Cu metallized paste by screen printing. Further, a through hole is formed at a predetermined position of the green sheet so that the inside of the through hole is finally exposed on the lower surface of the substrate.
Filled with metallized paste. Then, six green sheets to which the metallizing paste was applied were laminated and pressure-bonded while positioning the through holes.
【００４４】この積層体を７００℃でＮ2 ＋Ｈ2 Ｏ中で
脱バインダ後、各焼成温度で窒素雰囲気中でメタライズ
配線層と絶縁基板とを同時に焼成しパッケージ用の配線
基板を作製した。After removing the binder in N 2 + H 2 O at 700 ° C., the metallized wiring layer and the insulating substrate were simultaneously fired in a nitrogen atmosphere at each firing temperature to produce a wiring substrate for a package.
【００４５】次に、配線基板の下面にスルーホールに接
続する箇所に凹部を形成しＣｕメタライズからなる接続
パッドを作製した。そして、その接続パッドに図１に示
すように半田（錫３０〜１０％−鉛７０〜９０％）から
なる接続端子を取着した。なお、接続端子は、１ｃｍ2
当たり３０端子の密度で配線基板の下面全体に形成し
た。Next, a concave portion was formed on the lower surface of the wiring substrate at a position connected to the through hole, and a connection pad made of Cu metallized was manufactured. Then, connection terminals made of solder (30 to 10% of tin-70 to 90% of lead) were attached to the connection pads as shown in FIG. The connection terminal is 1 cm 2
It was formed on the entire lower surface of the wiring board at a density of 30 terminals per contact.
【００４６】一方、ガラス−エポキシ基板からなる４０
〜８００℃における熱膨張係数が１３ｐｐｍ／℃の絶縁
体の表面に銅箔からなる配線導体が形成されたプリント
基板を準備した。On the other hand, a glass-epoxy substrate 40
A printed board was prepared in which a wiring conductor made of copper foil was formed on the surface of an insulator having a thermal expansion coefficient of 13 ppm / ° C. at 〜800 ° C.
【００４７】そして、上記のパッケージ用配線基板をプ
リント基板の上の配線導体とパッケージ用絶縁基板の接
続端子が接続されるように位置合わせし、これをＮ2 の
雰囲気中で２６０℃で３分間熱処理しパッケージ用配線
基板をプリント基板表面に実装した。この熱処理により
パッケージ用配線基板の半田からなる接続端子が溶けて
プリント基板の配線導体と電気的に接続されたことを確
認した。Then, the above-mentioned package wiring board is aligned so that the wiring conductor on the printed board and the connection terminal of the package insulating board are connected, and this is placed in an atmosphere of N 2 at 260 ° C. for 3 minutes. After heat treatment, the package wiring substrate was mounted on the surface of the printed circuit board. By this heat treatment, it was confirmed that the solder connection terminals of the package wiring board were melted and electrically connected to the wiring conductors of the printed circuit board.
【００４８】（実装時の熱サイクル試験）次に、上記の
ようにしてパッケージ用配線基板をプリント基板表面に
実装したものを大気の雰囲気にて−４０℃と１２５℃の
各温度に制御した恒温槽に試験サンプルを１５分／１５
分の保持を１サイクルとして最高１０００サイクル繰り
返した。そして、各サイクル毎にプリント基板の配線導
体とパッケージ用配線基板との電気抵抗を測定し電気抵
抗に変化が現れるまでのサイクル数を表１に示した。ま
た、同時焼成によるＣｕメタライズ層に対して、メタラ
イズ層の剥離、溶融、焼結不良についての評価を行っ
た。(Thermal Cycle Test at the Time of Mounting) Next, the packaged wiring board mounted on the printed circuit board surface as described above was controlled at −40 ° C. and 125 ° C. in an air atmosphere at a constant temperature. Test sample in tank for 15 minutes / 15
A maximum of 1000 cycles were repeated with one minute being held. The electrical resistance between the wiring conductor of the printed circuit board and the wiring substrate for the package was measured for each cycle, and the number of cycles until the electrical resistance changed was shown in Table 1. Further, with respect to the Cu metallized layer formed by the simultaneous firing, the metallized layer was evaluated for peeling, melting, and sintering failure.
【００４９】[0049]
【表１】 [Table 1]
【００５０】表１の結果から明らかなように、リチウム
シリケート結晶相におけるＩ1 ／（Ｉ1 ＋Ｉ2 ）の比率
が０．８５より小さい試料Ｎo.４、５では、抗折強度が
２００ＭＰａ以下となってしまうのに対して、Ｉ1 ／
（Ｉ1 ＋Ｉ2 ）の比率が０．８５以上の試料Ｎo.１〜３
では抗折強度が２２０〜２５０ＭＰａの高強度を示し
た。しかも、Ｉ1 ／（Ｉ1 ＋Ｉ2 ）の比率を制御するこ
とにより同一のガラス、フィラーを用いても熱膨張係数
を１ｐｐｍ／℃以下のレベルで微調整することができ
た。また、絶縁基板として作製したパッケージ用配線基
板では昇降温１０００サイクル後もプリント基板の配線
導体とパッケージ用配線基板との間に電気抵抗変化は全
く見られず、極めて安定で良好な電気的接続状態を維持
できた。As is clear from the results in Table 1, in Samples Nos. 4 and 5 in which the ratio of I 1 / (I 1 + I 2 ) in the lithium silicate crystal phase is smaller than 0.85, the transverse rupture strength is 200 MPa or less. Whereas I 1 /
Sample Nos. 1 to 3 having a ratio of (I 1 + I 2 ) of 0.85 or more
Showed a high bending strength of 220 to 250 MPa. In addition, by controlling the ratio of I 1 / (I 1 + I 2 ), the thermal expansion coefficient could be finely adjusted at a level of 1 ppm / ° C. or less even when the same glass and filler were used. In addition, in the case of the package wiring board manufactured as an insulating substrate, no change in electrical resistance was observed between the wiring conductor of the printed board and the package wiring board even after 1000 cycles of temperature rise / fall, and an extremely stable and excellent electrical connection state. Could be maintained.
【００５１】実施例２ リチウム珪酸ガラスとして、組成（重量比率）で、７
４％ＳｉＯ2 −１４％Ｌｉ2 Ｏ−４％Ａｌ2 Ｏ3 −２％
Ｐ2 Ｏ5 −２Ｋ2 Ｏ−２ＺｎＯ−２％Ｎａ2 Ｏ（屈伏点
４８０℃）、および７４％ＳｉＯ2 −２０％Ｌｉ2 Ｏ
−４％Ａｌ2 Ｏ3 −２％Ｐ2 Ｏ5 （屈伏点４７０℃）の
結晶化度０％のガラスを用いて、各種フィラーとを表２
の組成で調合して実施例１と同様にして成形し、脱バイ
ンダー処理後、表２の条件で焼成した。Example 2 A lithium silicate glass having a composition (weight ratio) of 7
4% SiO 2 -14% Li 2 O-4% Al 2 O 3 -2%
P 2 O 5 -2K 2 O-2ZnO-2% Na 2 O (yield point 480 ° C.) and 74% SiO 2 -20% Li 2 O
-4% Al 2 O 3 -2% P 2 O 5 (Yield point: 470 ° C.) Using a glass having a crystallinity of 0% and various fillers, Table 2
, And molded in the same manner as in Example 1. After debinding, the mixture was fired under the conditions shown in Table 2.
【００５２】そして、上記のようにして得られた焼結体
に対して実施例１と同様にして、４０〜４００℃の熱膨
張係数、比誘電率、誘電損失、抗折強度および結晶相の
ピーク強度比を測定した。Then, in the same manner as in Example 1, the sintered body obtained as described above was subjected to a thermal expansion coefficient at 40 to 400 ° C., a relative dielectric constant, a dielectric loss, a transverse rupture strength and a crystal phase. The peak intensity ratio was measured.
【００５３】また，表２の組成物を用いて実施例１と同
様にＣｕをメタライズ配線層とする配線基板を作製し，
これをガラス−エポキシ基板に実装し、実装時の熱サイ
クル試験を行い、さらに同時焼成によるＣｕメタライズ
の配線層について観察した。結果は表２に示した。Further, a wiring board using Cu as a metallized wiring layer was prepared in the same manner as in Example 1 using the composition shown in Table 2.
This was mounted on a glass-epoxy substrate, a thermal cycle test was performed at the time of mounting, and a wiring layer of Cu metallized by simultaneous firing was observed. The results are shown in Table 2.
【００５４】[0054]
【表２】 [Table 2]
【００５５】表２の結果から明らかなように、ガラスの
含有量が２０体積％より少ない試料Ｎo.１０では、緻密
な焼結体が得られず、８０体積％を越える試料Ｎo.８，
９では、メタライズ層と同時焼成ができなかったため特
性の評価を行わなかった。また、試料Ｎo.１４は、リチ
ウム珪酸ガラスに対するクオーツ量を少なくしたもので
あるが、クオーツ量が少なくなるに従い、Ｌｉ2 Ｓｉ2
Ｏ5 の析出量が少なくなり、５０体積％よりも少なくな
り、これにより抗折強度が低くなった。As is evident from the results in Table 2, in Sample No. 10 having a glass content of less than 20% by volume, a dense sintered body was not obtained, and in Samples No. 8 and
In No. 9, evaluation of characteristics was not performed because co-firing with the metallized layer could not be performed. Sample No. 14 has a reduced amount of quartz relative to lithium silicate glass. However, as the amount of quartz decreases, Li 2 Si 2
The amount of O 5 deposited was reduced to less than 50% by volume, which resulted in low flexural strength.
【００５６】これらの比較例に対して、その他のいずれ
もＩ1 ／（Ｉ1 ＋Ｉ2 ）比率が０．８５以上の本発明の
試料は、いずれも高熱膨張特性を有するとともに、高強
度を有し、熱サイクル試験でも何ら問題なかった。In contrast to these comparative examples, all of the other samples of the present invention having an I 1 / (I 1 + I 2 ) ratio of 0.85 or more have high thermal expansion characteristics and high strength. However, there was no problem in the heat cycle test.
【００５７】また、原料のリチウム珪酸ガラスとして、
Ｌｉ2 Ｏの含有量を増加させたガラスを用いた試料Ｎo.
１１、１２では、リチウム珪酸結晶相の絶対量が増加し
たことによりさらに強度が向上した。As a raw material lithium silicate glass,
Sample No. using a glass with an increased content of Li 2 O
In Nos. 11 and 12, the strength was further improved by increasing the absolute amount of the lithium silicate crystal phase.
【００５８】[0058]
【発明の効果】以上詳述したように、本発明の配線基板
によれば、熱膨張係数が大きいプリント基板などの外部
電気回路基板との実装時に、両者の熱膨張係数の差に起
因する応力発生を抑制し、パッケージと外部電気回路と
を長期間にわたり正確、かつ強固に電気的接続させるこ
とができ、配線基板の大型化に対しても十分対応でき
る。しかも、基板の量産時において強度や熱膨張特性の
ばらつきなく安定に強度が高く安定に作製することがで
きるために、基板製造時の歩留りを向上し低コスト化を
実現できる。As described above in detail, according to the wiring board of the present invention, when mounted on an external electric circuit board such as a printed circuit board having a large thermal expansion coefficient, the stress caused by the difference between the two thermal expansion coefficients. Generation can be suppressed, and the package and the external electric circuit can be accurately and firmly electrically connected to each other for a long period of time, so that it is possible to sufficiently cope with an increase in the size of the wiring board. In addition, since the strength and the thermal expansion characteristics can be stably manufactured without variation in the strength and the thermal expansion characteristic during mass production of the substrate, the yield during the production of the substrate can be improved and the cost can be reduced.
【図１】本発明のＢＧＡ型の半導体素子収納用パッケー
ジの実装構造を説明するための断面図である。FIG. 1 is a cross-sectional view for explaining a mounting structure of a BGA type semiconductor element housing package of the present invention.
Ａ 半導体素子収納用パッケージ、 Ｂ 外部電気回路基板 １ 絶縁基板 ２ メタライズ配線層 ３ 蓋体 ４ 半導体素子 ５ ワイヤ ６ 接続パッド ７ 突起状端子 ８ 絶縁体 ９ 配線導体 Reference Signs List A Package for storing semiconductor element, B External electric circuit board 1 Insulating substrate 2 Metallized wiring layer 3 Lid 4 Semiconductor element 5 Wire 6 Connection pad 7 Protruding terminal 8 Insulator 9 Wiring conductor
───────────────────────────────────────────────────── フロントページの続き (72)発明者 米倉 秀人 鹿児島県国分市山下町１番４号 京セラ 株式会社総合研究所内 (72)発明者 民 保秀 鹿児島県国分市山下町１番４号 京セラ 株式会社総合研究所内 (72)発明者 柳田 司 鹿児島県国分市山下町１番４号 京セラ 株式会社総合研究所内 審査官 深草 祐一 (58)調査した分野(Int.Cl.7，ＤＢ名) C04B 35/16 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Hideto Yonekura 1-4-4 Yamashita-cho, Kokubu-shi, Kagoshima Prefecture Kyocera Research Institute Inc. (72) Inventor Yasuhide 1-4-4 Yamashita-cho, Kokubu-shi, Kagoshima Kyocera Within the Research Institute, Inc. (72) Inventor Tsukasa Yanagita 1-4, Yamashita-cho, Kokubu, Kagoshima Prefecture Kyocera Research Institute, Inc. Examiner Yuichi Fukakusa (58) Field surveyed (Int. Cl. 7 , DB name) C04B 35 / 16
Claims (1)
配線基板において、前記絶縁基板が、リチウム珪酸ガラ
スを２０〜８０体積％と、４０℃〜４００℃における熱
膨張係数が６ｐｐｍ／℃以上の金属酸化物を含むフィラ
ーを８０〜２０体積％の割合で含む成形体を焼成して得
られ、結晶相として少なくともリチウム珪酸結晶相を含
む焼結体であって、該焼結体のＸ線回折測定チャートに
おいて、Ｌｉ2 Ｓｉ2 Ｏ5 の（１１１）面のピーク強度
をＩ1 、Ｌｉ2 ＳｉＯ3 の（０２０）面のピーク強度を
Ｉ2 とした時、Ｉ1 ／（Ｉ1 ＋Ｉ2 ）で表されるピーク
強度比が０．８５以上であり、且つ４０℃〜４００℃に
おける熱膨張係数が８〜１８ｐｐｍ／℃のセラミック焼
結体からなることを特徴とする配線基板。1. A wiring board comprising an insulating substrate and a metallized wiring layer, wherein the insulating substrate has a lithium silicate glass content of 20 to 80% by volume and a thermal expansion coefficient at 40 ° C. to 400 ° C. of 6 ppm / ° C. or more. A sintered body obtained by firing a molded body containing a filler containing a metal oxide at a ratio of 80 to 20% by volume and containing at least a lithium silicate crystal phase as a crystal phase, and X-ray diffraction of the sintered body In the measurement chart, when the peak intensity of the (111) plane of Li 2 Si 2 O 5 is I 1 and the peak intensity of the (020) plane of Li 2 SiO 3 is I 2 , I 1 / (I 1 + I 2 ) Wherein the peak intensity ratio is 0.85 or more and a coefficient of thermal expansion at 40 ° C. to 400 ° C. is 8 to 18 ppm / ° C. The wiring substrate is made of a ceramic sintered body.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP01452996A JP3314131B2 (en) | 1996-01-30 | 1996-01-30 | Wiring board |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP01452996A JP3314131B2 (en) | 1996-01-30 | 1996-01-30 | Wiring board |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH09208299A JPH09208299A (en) | 1997-08-12 |
| JP3314131B2 true JP3314131B2 (en) | 2002-08-12 |
Family
ID=11863675
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP01452996A Expired - Fee Related JP3314131B2 (en) | 1996-01-30 | 1996-01-30 | Wiring board |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3314131B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3699571B2 (en) * | 1997-08-29 | 2005-09-28 | 京セラ株式会社 | Wiring board and its mounting structure |
-
1996
- 1996-01-30 JP JP01452996A patent/JP3314131B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH09208299A (en) | 1997-08-12 |
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