JP3312637B2 - Temperature-sensitive magnetic thin film, fabrication method thereof, and light detection type thin film temperature sensor - Google Patents
Temperature-sensitive magnetic thin film, fabrication method thereof, and light detection type thin film temperature sensorInfo
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- JP3312637B2 JP3312637B2 JP06661194A JP6661194A JP3312637B2 JP 3312637 B2 JP3312637 B2 JP 3312637B2 JP 06661194 A JP06661194 A JP 06661194A JP 6661194 A JP6661194 A JP 6661194A JP 3312637 B2 JP3312637 B2 JP 3312637B2
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- thin film
- temperature
- magnetic thin
- sensitive magnetic
- sensitive
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Description
【０００１】[0001]
【発明の属する技術分野】本発明は感温磁性薄膜とその
作製方法ならびに光検出型薄膜温度センサ、さらに詳細
には、様々な感温センサ、感温アクチュエータ等に応用
できる磁性薄膜およびその作製法、ならびに感温磁性薄
膜を利用した温度センサに関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a temperature-sensitive magnetic thin film, a method for producing the same, and a light detection type thin-film temperature sensor, and more particularly, a magnetic thin film applicable to various temperature-sensitive sensors and temperature-sensitive actuators, and a method for producing the same. And a temperature sensor using a temperature-sensitive magnetic thin film.
【０００２】[0002]
【従来の技術】温度の変化に伴って、磁性体の磁化、透
磁率、保磁力などの磁気的性質が急激変化することを利
用した、いわゆる感温素子が広く用いられている。サー
マルリードスイッチはその代表的なもので、指定温度に
キュリー温度を持つフェライト磁心と永久磁石、リード
スイッチを組み合わせたものである。これは、指定温度
におけるフェライトの透磁率の急激な低下によってリー
ドスイッチに加わる磁界が変化することで、主回路を開
閉する温度制御素子であり、冷蔵庫、電子ポット、自動
車のエンジンの監視などに実用されている。この温度セ
ンサとしての利用の他にも、感温磁性材料は熱エネルギ
ーを電気・機械エネルギーなどへの変換素子、生体加熱
等へも応用されている。2. Description of the Related Art So-called temperature-sensitive elements, which utilize the fact that magnetic properties such as magnetization, magnetic permeability, and coercive force of a magnetic material change rapidly with a change in temperature, are widely used. A typical example of the thermal reed switch is a combination of a ferrite core having a Curie temperature at a specified temperature, a permanent magnet, and a reed switch. This is a temperature control element that opens and closes the main circuit by changing the magnetic field applied to the reed switch due to a sharp decrease in the magnetic permeability of ferrite at a specified temperature, and is practical for monitoring refrigerators, electronic pots, and automobile engines. Have been. In addition to the use as the temperature sensor, the temperature-sensitive magnetic material is also applied to a conversion element for converting heat energy into electric / mechanical energy, a living body heating, and the like.
【０００３】近年は、電子機器の小型、軽量化への要請
が一層高ま植り、電子回路のシリコンチップ上一体化し
て薄膜形態で使用するセンサ、アクチュエータに対する
期待が大きい。また、温度に対する精度の増加、多様な
指定温度の設定が必要となっている。[0003] In recent years, there has been a growing demand for smaller and lighter electronic devices, and there has been great expectation for sensors and actuators that are integrated with a silicon chip of an electronic circuit and used in a thin film form. In addition, it is necessary to increase accuracy with respect to temperature and to set various designated temperatures.
【０００４】[0004]
【発明が解決しようとする課題】これら要請に対して従
来技術では次のような不都合があった。すなわち、一つ
は、指定温度を精密に制御することが困難であることで
ある。指定温度を変えるには材料のキュリー点を変化さ
せる必要がある。キュリー点は材料固有の性質であり、
これ変化させるためには材料の組性を直接変える必要が
ある。Ｍｎ−Ｃｕ系フェライト、Ｆｅ−Ｎｉ−Ｃｒ系合
金、Ｃｕ−Ｎｉ系合金などが多く使用される材料である
が、これらにおいて、各々の系における組成比率、ある
いは温度によっては、合金系そのものを選択、変化させ
なければならない。またキュリー点が変われば、磁化の
絶対値なども同時に変化するので、指定温度、機能によ
って、単品としての設計が必要となる。In response to these requirements, the prior art has the following disadvantages. That is, one is that it is difficult to precisely control the designated temperature. Changing the designated temperature requires changing the Curie point of the material. The Curie point is a material-specific property,
To change this, it is necessary to directly change the composition of the material. Mn-Cu-based ferrite, Fe-Ni-Cr-based alloy, Cu-Ni-based alloy, etc. are frequently used materials. In these, the alloy system itself is selected depending on the composition ratio in each system or the temperature. Must be changed. Further, if the Curie point changes, the absolute value of magnetization and the like also change at the same time, so that it is necessary to design a single product depending on the specified temperature and function.
【０００５】二つには、薄膜化、プロセス化に当たって
の困難性である。薄膜化に当たっては、上記組成に対す
る制御の厳密性はさらに要求される。また、集積化にあ
ったり、いくつもの指定温度の材料を組み合わせるには
それぞれの組成の膜を別々に堆積せねばならず、プロセ
スが膨大になってしまう。さらに、これらに加え設計変
更、指定温度の変更に際しては、以前の薄膜プロセスは
適用できず、素子形成後の指定値変更は不可能である。[0005] The second is difficulty in thinning and processing. In thinning the film, strict control of the composition is further required. In addition, in order to be integrated or to combine materials at various designated temperatures, films having respective compositions must be separately deposited, and the process becomes enormous. Further, in addition to these, when changing the design and the designated temperature, the previous thin film process cannot be applied, and it is impossible to change the designated value after forming the element.
【０００６】これら不都合に加え、医療分野、耐電磁ノ
イズの要求される分野および、防爆性の要求される分野
においては、電気的な回路、接点などを用いず、しかも
微小領域の温度を光によりセンシングする遠隔的な温度
センサが望まれているが、従来、このような温度センサ
はなかった。In addition to these disadvantages, in the medical field, the field where electromagnetic noise resistance is required, and the field where explosion-proof property is required, electric circuits and contacts are not used, and the temperature of a minute area is controlled by light. Although a remote temperature sensor for sensing is desired, there has been no such temperature sensor conventionally.
【０００７】本発明は、上記問題点に対して、指定温度
を精密に、しかも簡便に設定でき、かつ薄膜化プロセス
化が容易な感温磁性薄膜およびその作製法ならびに、こ
の薄膜を利用した、微小領域の温度を精度よく、遠隔的
に光によって検知する温度センサに関する技術を提供す
ることを目的としている。In order to solve the above-mentioned problems, the present invention provides a temperature-sensitive magnetic thin film which can set a designated temperature precisely and easily, and which can be easily formed into a thin-film process. It is an object of the present invention to provide a technology related to a temperature sensor that accurately detects the temperature of a minute region remotely by light.
【０００８】[0008]
【課題を解決するための手段】上記課題を解決するた
め、本発明による感温磁性薄膜は、Ｐｄ、Ｐｔ、Ｉｒ、
Ｒｕ、Ｏｓから選ばれた元素を５ａｔｍ％以下含有す
る、塩化セシウム結晶構造のＦｅ−Ｒｈ系合金の薄膜上
に、部分的に厚さの異なる非磁性の薄膜が堆積されてな
ることを特徴とする。In order to solve the above-mentioned problems, a temperature-sensitive magnetic thin film according to the present invention comprises Pd, Pt, Ir,
A non-magnetic thin film having a partially different thickness is deposited on a thin film of an Fe-Rh-based alloy having a cesium chloride crystal structure containing 5 atm% or less of an element selected from Ru and Os. I do.
【０００９】また、本発明による感温磁性薄膜の作製方
法は、Ｐｄ、Ｐｔ、Ｉｒ、Ｒｕ、Ｏｓから選ばれた元素
を５ａｔｍ％以下含有する、塩化セシウム結晶構造のＦ
ｅ−Ｒｈ系合金薄膜を形成し、前記合金薄膜上に非磁性
の薄膜を不均一に堆積することを特徴とするものであ
る。Further, the method for producing a temperature-sensitive magnetic thin film according to the present invention is directed to a method of forming a cesium chloride crystal structure containing 5 atm% or less of an element selected from Pd, Pt, Ir, Ru and Os.
An e-Rh alloy thin film is formed, and a non-magnetic thin film is non-uniformly deposited on the alloy thin film.
【００１０】さらに本発明による感温磁性薄膜を使用し
た光検出型薄膜温度センサは、Ｐｄ、Ｐｔ、Ｉｒ、Ｒ
ｕ、Ｏｓから選ばれた元素を５ａｔｍ％以下含有する、
塩化セシウム結晶構造のＦｅ−Ｒｈ系合金の薄膜上に、
部分的に厚さの異なる非磁性の薄膜が堆積されてなる感
温磁性薄膜と、前記感温磁性薄膜に直線偏光を入射する
手段と、前記直線偏光の前記感温磁性薄膜からの反射光
を検出する手段と、前記感温磁性薄膜の表面に略平行な
方向に磁場を印加する起磁力源とを有することを特徴と
するものである。Further, the photodetection type thin film temperature sensor using the temperature-sensitive magnetic thin film according to the present invention comprises Pd, Pt, Ir, R
contains at least 5 atm% of an element selected from u and Os;
On a thin film of Fe-Rh alloy with cesium chloride crystal structure,
A temperature-sensitive magnetic thin film in which a non-magnetic thin film having a partially different thickness is deposited, a unit for inputting linearly polarized light to the temperature-sensitive magnetic thin film, and a reflected light of the linearly polarized light from the temperature-sensitive magnetic thin film. It has a detecting means and a magnetomotive force source for applying a magnetic field in a direction substantially parallel to the surface of the temperature-sensitive magnetic thin film.
【００１１】本発明の特徴の一つは、キュリー温度にお
ける磁気特性の変化を利用するのではなく、Ｆｅ−Ｒｈ
系合金の薄膜における反強磁性から強磁性へ変化する磁
気相転移を利用する点である。Ｆｅ−５０ａｔ％Ｒｈ近
傍組成の合金（Ｆｅ−４５〜５６ａｔ％Ｒｈ組成）はＣ
ｓＣｌタイプのｂｃｃ規則合金となる。この規則合金
は、低温において反強磁性であるが、６０℃〜１００℃
において強磁性に遷移する。また、０〜５原子％のＰ
ｄ、Ｐｔ、Ｉｒ、Ｒｕ、Ｏｓを前記合金に添加すると、
転移温度は５０〜４００℃程度の範囲で変化させること
ができる。転移温度において磁化のほとんどない状態か
ら不連続に磁化約１０００Ｇ程度が発生するために、温
度センサや感熱駆動アクチュエータなど多くの応用の可
能性がある。このバルクにおける特性を薄膜で利用する
ことに着目している。One of the features of the present invention is that instead of utilizing the change in magnetic properties at the Curie temperature, Fe-Rh
The point is to utilize the magnetic phase transition that changes from antiferromagnetic to ferromagnetic in a thin film of a system alloy. An alloy having a composition near Fe-50 at% Rh (Fe-45 to 56 at% Rh composition) is C
It becomes an sCl type bcc ordered alloy. This ordered alloy is antiferromagnetic at low temperatures, but at 60 ° C to 100 ° C.
Transitions to ferromagnetic. Also, 0-5 atomic% of P
When d, Pt, Ir, Ru, and Os are added to the alloy,
The transition temperature can be changed in the range of about 50 to 400 ° C. Since about 1000 G of magnetization is discontinuously generated from a state where there is almost no magnetization at the transition temperature, there are many applications such as a temperature sensor and a heat-sensitive actuator. We are focusing on utilizing the properties of this bulk in thin films.
【００１２】特徴の二つ目は、上記Ｆｅ−Ｒｈ系合金薄
膜をまず基板上に作製してから、非磁性の薄膜をオーバ
ーコートする点である。このオーバーコート薄膜はＦｅ
Ｒｈ薄膜に加わる応力を制御する目的で形成するもので
ある。Ｆｅ−Ｒｈ系合金における反強磁性−強磁性相転
移は、応力に敏感であり、バルクにおいては、１００Ｍ
Ｐａの静水圧（圧縮応力）あたり、５から６℃の相転移
点の増加が生じることが知られているが、静水圧下で素
子を形成するのは実用的でない。発明者らは、非磁性薄
膜オーバーコートという手法により、薄膜に適した、２
次元的な応力付与によって、転移点の制御ができること
を発見し、本発明に至ったのである。The second feature is that the above-mentioned Fe-Rh alloy thin film is first formed on a substrate and then overcoated with a non-magnetic thin film. This overcoat thin film is made of Fe
It is formed for the purpose of controlling the stress applied to the Rh thin film. The antiferromagnetic-ferromagnetic phase transition in Fe-Rh based alloys is stress sensitive, and in bulk, 100M
It is known that the phase transition point increases by 5 to 6 ° C. per hydrostatic pressure (compression stress) of Pa, but it is not practical to form the element under hydrostatic pressure. The present inventors have proposed a method of overcoating non-magnetic thin films suitable for thin films.
The inventors have found that the transition point can be controlled by applying dimensional stress, leading to the present invention.
【００１３】詳細は実施例にて後程述べるが、図１に、
薄膜構成の模式図、図２にオーバーコートによる磁化の
温度に対する挙動の変化の例を示した。図１において１
は基板、２はＦｅ−Ｒｈ系合金薄膜、３は非磁性オーバ
ーコート薄膜を示す。また、図２において、Ａがオーバ
ーコート前の厚さ２０００ÅのＦｅ５１Ｒｈ４９合金薄
膜をスパッタ法で形成して、１０００℃でアニールした
後の磁化の温度変化を示すものである。この薄膜に厚さ
２０００ÅのＳｉＯ2をスパッタ法で形成すると、Ｂの
ように相転移温度が高温側にシフトしていることがわか
る。これはオーバーコートによって、Ｆｅ−Ｒｈ系合金
薄膜に圧縮応力が加わったためである。このオーバーコ
ートによる応力付与で都合の良い点は、オーバーコート
の膜厚を変えることで、応力の大きさを簡便に制御でき
ることである。さらには、オーバーコートする際の薄膜
形成条件や材料を変えることによって、圧縮、引っ張り
の両応力を付与することもできる。このため、初めに形
成してあるＦｅ−Ｒｈ系合金薄膜の磁気相転移点を高温
側にも、低温側にも、後から調整ができるという極めて
利便性に富む作製法である。加えて、薄膜全体のみなら
ず、薄膜一部領域だけの相転移温度の変更、あるいは、
温度に対する磁化変化量を任意にするということが可能
になる。The details will be described later in an embodiment, but FIG.
FIG. 2 shows a schematic diagram of a thin film configuration, and FIG. 2 shows an example of a change in behavior of magnetization with temperature due to overcoating. In FIG. 1, 1
Indicates a substrate, 2 indicates an Fe-Rh alloy thin film, and 3 indicates a non-magnetic overcoat thin film. In FIG. 2, A represents the temperature change of the magnetization after the formation of a 2,000-mm-thick Fe51Rh49 alloy thin film by a sputtering method before overcoating and annealing at 1000 ° C. When SiO 2 having a thickness of 2000 ° is formed on this thin film by sputtering, it can be seen that the phase transition temperature shifts to a higher temperature side as shown in B. This is because a compressive stress was applied to the Fe-Rh alloy thin film by the overcoat. The advantage of applying the stress by the overcoat is that the magnitude of the stress can be easily controlled by changing the thickness of the overcoat. Furthermore, both compressive and tensile stresses can be applied by changing the thin film forming conditions and materials used for overcoating. Therefore, this is a very convenient manufacturing method in which the magnetic phase transition point of the initially formed Fe—Rh-based alloy thin film can be adjusted to a high temperature side or a low temperature side later. In addition, the change of the phase transition temperature of not only the whole thin film but also a part of the thin film, or
It is possible to make the amount of magnetization change with respect to temperature arbitrary.
【００１４】ある設定温度において、オンオフする感温
スイッチを集積して、複数の異なる温度で各々スイッチ
ングする素子を形成しようとする際には、従来技術であ
れば、それぞれ別な組成の薄膜を別々に形成し集積化す
る必要があった。本発明によれば、もとになるＦｅ−Ｒ
ｈ系合金薄膜は同一のものを用いて、部分的に、コート
する非磁性薄膜の膜厚を変えることは容易である。ま
た、ある薄膜の領域において、非磁性薄膜の膜厚を連続
的に変化させる、すなわち、膜厚勾配をつけることも可
能となる。When integrating temperature-sensitive switches that are turned on and off at a certain set temperature to form elements that switch at a plurality of different temperatures, a thin film having a different composition is separately formed according to the prior art. Formed and integrated. According to the present invention, the original Fe-R
Using the same h-based alloy thin film, it is easy to partially change the thickness of the non-magnetic thin film to be coated. Further, in a certain thin film region, the thickness of the nonmagnetic thin film can be continuously changed, that is, a film thickness gradient can be provided.
【００１５】図３はオーバーコート薄膜３に膜厚勾配を
つけた際の構成の模式図である。オーバーコートに膜厚
勾配（分布）があると、Ｆｅ−Ｒｈ系合金に対する応力
にも勾配が生じ、転移温度にも分布が生じるため、温度
増加とともに、部分的に相転移が起き、徐々に磁化が増
加するという効果が現われる。これにより従来の材料で
は不可能であった。温度上昇とともに直線的に磁化増加
を示す薄膜材料の作製が可能になる。FIG. 3 is a schematic view of a configuration when a film thickness gradient is applied to the overcoat thin film 3. If there is a film thickness gradient (distribution) in the overcoat, a gradient also occurs in the stress with respect to the Fe-Rh-based alloy, and the distribution also occurs in the transition temperature. Has the effect of increasing. This has been impossible with conventional materials. It becomes possible to produce a thin film material that shows a linear increase in magnetization with increasing temperature.
【００１６】上記感温薄膜の作製法によって、薄膜の部
分部分で転移温度を変えれば、従来にできなかった温度
に対して非常に精密な、しかも微小領域で光によって遠
隔的に温度を検出するセンサができる。図４は、本発明
の光検出型薄膜温度センサの模式図である。４１はＦｅ
−Ｒｈ系合金薄膜、４２は基板、４３は永久磁石であ
り、ヨーク４４を通して、膜面平行に磁場が印加されて
いる。一方、発光素子４５からの光は光ファイバ４６な
らびに、偏光子４７をとおして偏光が薄膜４１面に照射
される。薄膜４１から反射した光は、カー効果によっ
て、磁化の大きさに対応して偏光面が回転した後、検光
子４８、ファイバ４９を通じて、受光素子４１０にて光
強度が検出される。温度上昇によって、Ｆｅ−Ｒｈ系合
金の磁化が発生するとそれに対応して受光強度が変化す
るために、温度を遠隔的に調べることができる。If the transition temperature is changed in a portion of the thin film by the above-mentioned method for producing a temperature-sensitive thin film, the temperature can be detected very precisely in a very small area by using light, if the transition temperature is changed. A sensor can be made. FIG. 4 is a schematic view of a light detection type thin film temperature sensor according to the present invention. 41 is Fe
-A Rh-based alloy thin film, 42 is a substrate, 43 is a permanent magnet, and a magnetic field is applied through a yoke 44 parallel to the film surface. On the other hand, the light from the light emitting element 45 is irradiated on the surface of the thin film 41 through the optical fiber 46 and the polarizer 47. After the light reflected from the thin film 41 has its polarization plane rotated in accordance with the magnitude of magnetization by the Kerr effect, the light intensity is detected by the light receiving element 410 through the analyzer 48 and the fiber 49. When the temperature rise causes magnetization of the Fe-Rh alloy to occur, the received light intensity changes correspondingly, so that the temperature can be checked remotely.
【００１７】光の照射、検出はファイバをもちずに、空
間を飛ばしても差し支えない。本発明の特徴は、薄膜４
１であり、図５に示すようにいくつかの部分４１１に別
れていて、それぞれ別な膜厚のオーバーコートがなされ
ている。すなわち、薄膜部分４１１はそれぞれ、異なる
温度で磁化発生する。この分割数、ならびに温度設定は
オーバーコートの種類、膜厚で指定の範囲に設定でき
る。各分割を多くするほど、温度に対する精度が向上す
る。プロセスの点からも、マスクをずらしながらオーバ
ーコートするなどすれば、各分割領域での膜厚の変化は
簡単である。また、分割しなくとも、オーバーコート薄
膜の膜厚に勾配があって、磁気相転移が温度に対して連
続的に発生させることもできる。従来技術で本センサと
同様の機能を持たせようとすると、薄膜部分４１１の各
々を別々の組成の感温材料薄膜を膜厚や組成の精度よく
形成する必要があったが、本発明によれば、格段に簡便
であることは明白であろう。Light irradiation and detection may be performed in a space without using a fiber. The feature of the present invention is that the thin film 4
As shown in FIG. 5, it is divided into several portions 411, each of which has an overcoat of a different thickness. That is, each of the thin film portions 411 is magnetized at a different temperature. The number of divisions and the temperature setting can be set in a range specified by the type and film thickness of the overcoat. As the number of divisions increases, the accuracy with respect to temperature improves. From the viewpoint of the process, if the overcoat is performed while shifting the mask, the change in the film thickness in each divided region is easy. Also, even if the overcoat thin film is not divided, the thickness of the overcoat thin film has a gradient, and the magnetic phase transition can be continuously generated with respect to the temperature. In order to provide the same function as that of the present sensor in the prior art, it is necessary to form temperature-sensitive material thin films having different compositions with high precision in the thickness and composition of each of the thin film portions 411. Obviously, it would be much easier.
【００１８】以下、実施例をあげて説明する。Hereinafter, an embodiment will be described.
【００１９】[0019]
【実施例１】まず、非磁性オーバーコート薄膜の応力が
膜厚とともにどのように変化するか調べた。Ｓｉ基板上
に、Ａｒガス圧３×１０-1Ｐａ、パワー３００Ｗの条件
でＳｉＯ2薄膜をスパッタリングにて膜厚を変化させて
作製した。これとは別にＳｉ基板にＥＣＲプラズマＣＶ
Ｄ法により、プラズマ形成ガスにＡｒを、反応ガスとし
てＳｉＨ4／Ｃ2Ｈ4＝１．１５の流量比率でガス流量５
０ｓｃｃｍ、基板温度７００℃の条件でＳｉＣ薄膜を形
成した。それぞれの薄膜の膜厚と応力の関係を図６に示
す。スパッタで形成したＳｉＯ2は圧縮応力となり、Ｅ
ＣＲプラズマＣＶＤで形成したＳｉＣは引っ張り応力と
なった。膜厚１０００Åに対してそれぞれ２．３×１０
8、−１．６×１０8Ｐａの増加率で、膜厚に対して応力
は比例していた。Example 1 First, it was examined how the stress of a non-magnetic overcoat thin film changes with the film thickness. On a Si substrate, an SiO 2 thin film was formed by sputtering under the conditions of an Ar gas pressure of 3 × 10 −1 Pa and a power of 300 W by changing the thickness by sputtering. Separately, ECR plasma CV on Si substrate
According to the D method, Ar was used as a plasma forming gas, and a gas flow rate of 5 was used as a reaction gas at a flow rate ratio of SiH 4 / C 2 H 4 = 1.15.
An SiC thin film was formed under the conditions of 0 sccm and a substrate temperature of 700 ° C. FIG. 6 shows the relationship between the thickness of each thin film and the stress. SiO 2 formed by sputtering becomes a compressive stress, and E 2
SiC formed by CR plasma CVD became tensile stress. 2.3 × 10 for each 1000Å
8 , the stress was proportional to the film thickness at an increasing rate of -1.6 × 10 8 Pa.
【００２０】さて、Ｆｅ５０Ｒｈ５０合金薄膜、すなわ
ちＦｅとＲｈの１：１の組成の薄膜をＡｒガス圧３×１
０-1Ｐａ、パワー１５０Ｗにてスパッタで石英基板に２
０００Å形成して、１０００℃でアニールした単層薄膜
は５０℃で磁気相転移を示した。この薄膜の上に、前記
ＳｉＯ2、ＳｉＣをそれぞれ応力測定時と同一条件で、
膜厚を変化させて、オーバーコートした。その結果、Ｆ
ｅ５０Ｒｈ５０薄膜の相転移温度は図７のようになっ
た。オーバーコート薄膜単独での応力量を反映して、Ｓ
ｉＯ2膜の圧縮応力では高温側に、ＳｉＣ膜の引っ張り
応力では低温側に転移点が変化していることがわかる。
膜厚に対する変化も直線関係で示されている。Now, an Fe50Rh50 alloy thin film, that is, a thin film having a 1: 1 composition of Fe and Rh is prepared by Ar gas pressure 3 × 1.
Sputtering at 0 -1 Pa and power of 150 W onto quartz substrate
The single-layer thin film formed at 000 ° and annealed at 1000 ° C. exhibited a magnetic phase transition at 50 ° C. On this thin film, the SiO 2 and SiC were respectively applied under the same conditions as when the stress was measured.
Overcoating was performed by changing the film thickness. As a result, F
The phase transition temperature of the e50Rh50 thin film was as shown in FIG. Reflecting the stress amount of the overcoat thin film alone, S
It can be seen that the transition point changes to the high temperature side in the compressive stress of the iO 2 film and to the low temperature side in the tensile stress of the SiC film.
The change with respect to the film thickness is also shown in a linear relationship.
【００２１】このように、オーバーコートが堆積する際
の応力を利用して、先に形成してあったＦｅ−Ｒｈ系薄
膜の相転移温度を制御できること、しかもオーバーコー
ト薄膜の作製条件により、低温側にも高温側にも変化さ
せられることがわかる。スパッタで形成したＳｉＮの薄
膜についても、図６、図７で示すように同様な効果が確
認された。オーバーコート薄膜は上記薄膜に限らず、非
磁性であれば、特に制限はない。なお、図６、図７図
中、△はＳｉＣ、○はＳｉＯ2、□はＳｉＮの結果を示
すグラフである。As described above, it is possible to control the phase transition temperature of the Fe-Rh-based thin film previously formed by utilizing the stress generated when the overcoat is deposited. It can be seen that both sides can be changed to the high temperature side. Similar effects were confirmed for the SiN thin film formed by sputtering, as shown in FIGS. The overcoat thin film is not limited to the above thin film, and is not particularly limited as long as it is nonmagnetic. 6 and 7 are graphs showing results for SiC, ○ for SiO 2 , and □ for SiN.
【００２２】[0022]
【実施例２】実施例１と同様に、スパッタならびにアニ
ールしたＦｅ５０Ｒｈ５０合金薄膜（膜厚２０００Å）
に、図３のような構成でＳｉＯ2を膜厚に勾配を持たせ
て形成した。ＳｉＯ2の作製条件は実施例１と同様であ
るが、基板とターゲットの間にシャッターを設けて、シ
ャッターを等速で移動させて、堆積させる膜厚を変え、
膜厚勾配を０から４０００Åとしたものである。オーバ
ーコート後の温度に対する磁化変化を図８に示す。オー
バーコート薄膜の膜厚勾配を付与することによって、４
０℃から１００℃にかけて、直線的に磁化増加が認めら
れた。この直線性を利用すれば、従来不可能であった、
連続的な磁化変化を検出して温度をモニターしたり、力
の大きさを制御したアクチュエータなどが形成できる。[Embodiment 2] A Fe50Rh50 alloy thin film (thickness: 2000 Å) sputtered and annealed in the same manner as in Embodiment 1.
Then, SiO 2 was formed with a gradient in the film thickness in the configuration as shown in FIG. The conditions for producing SiO 2 were the same as in Example 1, except that a shutter was provided between the substrate and the target, the shutter was moved at a constant speed, and the film thickness to be deposited was changed.
The film thickness gradient is from 0 to 4000 °. FIG. 8 shows the change in magnetization with temperature after overcoating. By providing a film thickness gradient of the overcoat thin film, 4
From 0 ° C. to 100 ° C., a linear increase in magnetization was observed. If this linearity is used, it was impossible in the past.
The temperature can be monitored by detecting a continuous magnetization change, and an actuator or the like in which the magnitude of the force is controlled can be formed.
【００２３】[0023]
【実施例３】Ｆｅ４９Ｒｈ５０Ｐｄ１なる組成の薄膜を
２０００Å実施例１と同一条件でスパッタで形成、アニ
ールした、この薄膜は４０℃で磁気相転移が発生した。
この同一薄膜を基板ごと０．５ｍｍ角に切断したものを
６個用意した。それぞれは、切断前と同じ相転移温度を
有している。これら小片ごと、膜厚を変えてＳｉＯ2オ
ーバーコートを施した。すなわち、膜厚０から８００Å
きざみで膜厚を増やした。図９にそれぞれの磁化の温度
変化を示した。Example 3 A thin film having a composition of Fe49Rh50Pd1 was formed by sputtering under the same conditions as in Example 1 at 2000 ° C. and annealed. This thin film showed a magnetic phase transition at 40 ° C.
Six pieces of the same thin film cut into a 0.5 mm square together with the substrate were prepared. Each has the same phase transition temperature as before cutting. Each of these small pieces was changed in film thickness and overcoated with SiO 2 . That is, the film thickness is from 0 to 800 °
The film thickness was increased in increments. FIG. 9 shows the temperature change of each magnetization.
【００２４】これらを、図４で示したような構成とし
て、光検出型温度センサを作製した。この図中で、Ｆｅ
−Ｒｈ合金薄膜４１はこの場合前記小片を配列してスラ
イド硝子に固定した。永久磁石４３にはＮｄＦｅＢ（Ｂ
ｒ：１．５Ｔ）を、光照射にはファイバを用いず、Ｈｅ
Ｎｅ（波長６３０ｎｍ）を用いフォトマルで検出した。
上記のような構成のセンサのプローブに対応する磁性膜
の集合体の裏面にヒータと熱電対を配置して、温度上昇
させた際の光強度を測定した。These were configured as shown in FIG. 4 to produce a light detection type temperature sensor. In this figure, Fe
In this case, the small pieces of the Rh alloy thin film 41 were arranged and fixed to a slide glass. NdFeB (B
r: 1.5T), using He without using fiber for light irradiation.
It was detected by photomultiplier using Ne (wavelength 630 nm).
A heater and a thermocouple were arranged on the back surface of the magnetic film assembly corresponding to the probe of the sensor having the above configuration, and the light intensity when the temperature was increased was measured.
【００２５】結果は図１０のように、各小片の磁化変化
に対応した光出力が得られ、センサとしての有用性が示
された。この例の場合にはオーバーコート膜厚の違う小
片を集合させ、また、磁石と組み合わせたが、磁石やプ
ローブは薄膜プロセスで一体形成できることは言うまで
もない。As a result, as shown in FIG. 10, an optical output corresponding to a change in the magnetization of each small piece was obtained, indicating the usefulness as a sensor. In this example, small pieces having different overcoat film thicknesses were assembled and combined with a magnet. Needless to say, the magnet and the probe can be integrally formed by a thin film process.
【００２６】[0026]
【発明の効果】以上説明したように、本発明の感温磁性
薄膜およびその作製方法を用いれば、指定温度を任意
に、しかも精密に制御できる感温磁性薄膜が簡便に作製
でき、且つ薄膜化、プロセス化が容易で、感温設定を修
正できる感温磁性薄膜の作製法ならびに、微小領域の温
度を精度よく、遠隔的に光によって検知する薄膜温度セ
ンサが実現できるという利点がある。As described above, by using the temperature-sensitive magnetic thin film and the method of manufacturing the same according to the present invention, a temperature-sensitive magnetic thin film capable of arbitrarily and precisely controlling a designated temperature can be easily manufactured. There is an advantage that a method of manufacturing a temperature-sensitive magnetic thin film that can be easily processed and whose temperature-sensitive setting can be corrected, and a thin-film temperature sensor that accurately and remotely detects the temperature of a minute region by light can be realized.
【図１】本発明の一例の構成図。FIG. 1 is a configuration diagram of an example of the present invention.
【図２】オーバーコートによる磁化−温度特性の変化を
示す図。FIG. 2 is a diagram showing a change in magnetization-temperature characteristics due to overcoating.
【図３】本発明の他の具体例の構成図。FIG. 3 is a configuration diagram of another specific example of the present invention.
【図４】本発明の光検出型薄膜検知センサの一例の模式
図。FIG. 4 is a schematic view of an example of a light detection type thin film detection sensor according to the present invention.
【図５】合金薄膜の拡大図。FIG. 5 is an enlarged view of an alloy thin film.
【図６】実施例１におけるオーバーコートの膜厚と応力
の関係を示す図。FIG. 6 is a diagram showing the relationship between the thickness of an overcoat and stress in Example 1.
【図７】実施例１におけるオーバーコートの膜厚と磁気
相転移温度の関係を示す図。FIG. 7 is a diagram showing the relationship between the thickness of the overcoat and the magnetic phase transition temperature in Example 1.
【図８】実施例２におけるオーバーコート後の薄膜の磁
化の温度変化を示す図。FIG. 8 is a diagram showing a temperature change in magnetization of a thin film after overcoating in Example 2.
【図９】実施例３におけるオーバーコート後の薄膜の磁
化の温度変化を示す図。FIG. 9 is a diagram showing a temperature change in magnetization of a thin film after overcoating in Example 3.
【図１０】実施例３における温度変化に対応した光検出
強度を示す図。FIG. 10 is a diagram illustrating light detection intensity corresponding to a temperature change in the third embodiment.
１ 基板 ２ Ｆｅ−Ｒｈ系合金薄膜 ３ オーバーコート薄膜 ４１ Ｆｅ−Ｒｈ系合金薄膜 ４２ 基板 ４３ 永久磁石 ４４ ヨーク ４５ 発光素子 ４６ 光ファイバ ４７ 偏光子 ４８ 検光子 ４９ ファイバ ４１０ 受光素子 ４１１ 薄膜部分 DESCRIPTION OF SYMBOLS 1 Substrate 2 Fe-Rh alloy thin film 3 Overcoat thin film 41 Fe-Rh alloy thin film 42 Substrate 43 Permanent magnet 44 Yoke 45 Light emitting element 46 Optical fiber 47 Polarizer 48 Analyzer 49 Fiber 410 Light receiving element 411 Thin film part
───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 平６−5174（ＪＰ，Ａ) (58)調査した分野(Int.Cl.7，ＤＢ名) H01F 10/00 - 10/32 G01K 1/00 - 19/00 ────────────────────────────────────────────────── ─── Continuation of the front page (56) References JP-A-6-5174 (JP, A) (58) Fields investigated (Int. Cl. 7 , DB name) H01F 10/00-10/32 G01K 1 / 00-19/00
Claims (5)
た元素を５ａｔｍ％以下含有する、塩化セシウム結晶構
造のＦｅ−Ｒｈ系合金の薄膜上に、部分的に厚さの異な
る非磁性の薄膜が堆積されてなることを特徴とする感温
磁性薄膜。1. A non-magnetic layer having a partially different thickness on a thin film of an Fe-Rh-based alloy having a cesium chloride crystal structure containing 5 atm% or less of an element selected from Pd, Pt, Ir, Ru, and Os. 1. A temperature-sensitive magnetic thin film comprising a thin film deposited thereon.
ＳｉＮから選ばれた１種以上であることを特徴とする請
求項１記載の感温性磁性薄膜。2. The method according to claim 1, wherein the non-magnetic thin film is made of SiO 2 , SiC,
The temperature-sensitive magnetic thin film according to claim 1, wherein the magnetic thin film is at least one selected from SiN.
た元素を５ａｔｍ％以下含有する、塩化セシウム結晶構
造のＦｅ−Ｒｈ系合金薄膜を形成し、前記合金薄膜上に
非磁性の薄膜を不均一に堆積することを特徴とする感温
性磁性薄膜の作製方法。3. An Fe-Rh-based alloy thin film having a cesium chloride crystal structure containing 5 atm% or less of an element selected from Pd, Pt, Ir, Ru, and Os, and a non-magnetic thin film is formed on the alloy thin film. The method for producing a temperature-sensitive magnetic thin film, comprising depositing non-uniformly.
ＳｉＮから選ばれた１種以上であることを特徴とする請
求項３記載の感温性磁性薄膜の作製方法。4. The method according to claim 1, wherein the non-magnetic thin film is made of SiO 2 , SiC,
The method for producing a temperature-sensitive magnetic thin film according to claim 3, wherein at least one kind is selected from SiN.
た元素を５ａｔｍ％以下含有する、塩化セシウム結晶構
造のＦｅ−Ｒｈ系合金の薄膜上に、部分的に厚さの異な
る非磁性の薄膜が堆積されてなる感温磁性薄膜と、前記
感温磁性薄膜に直線偏光を入射する手段と、前記直線偏
光の前記感温磁性薄膜からの反射光を検出する手段と、
前記感温磁性薄膜の表面に略平行な方向に磁場を印加す
る起磁力源とを有することを特徴とする光検出型薄膜温
度センサ。5. A nonmagnetic layer having a partially different thickness on a thin film of an Fe—Rh alloy having a cesium chloride crystal structure containing 5 atm% or less of an element selected from Pd, Pt, Ir, Ru, and Os. A temperature-sensitive magnetic thin film formed by depositing a thin film, means for inputting linearly polarized light to the temperature-sensitive magnetic thin film, and means for detecting reflected light of the linearly polarized light from the temperature-sensitive magnetic thin film,
And a magnetomotive force source for applying a magnetic field in a direction substantially parallel to the surface of the temperature-sensitive magnetic thin film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP06661194A JP3312637B2 (en) | 1994-03-10 | 1994-03-10 | Temperature-sensitive magnetic thin film, fabrication method thereof, and light detection type thin film temperature sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP06661194A JP3312637B2 (en) | 1994-03-10 | 1994-03-10 | Temperature-sensitive magnetic thin film, fabrication method thereof, and light detection type thin film temperature sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH07249517A JPH07249517A (en) | 1995-09-26 |
| JP3312637B2 true JP3312637B2 (en) | 2002-08-12 |
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ID=13320879
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|---|---|---|---|
| JP06661194A Expired - Fee Related JP3312637B2 (en) | 1994-03-10 | 1994-03-10 | Temperature-sensitive magnetic thin film, fabrication method thereof, and light detection type thin film temperature sensor |
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| KR100590211B1 (en) | 2002-11-21 | 2006-06-15 | 가부시키가이샤 덴소 | Magnetic impedance device, sensor apparatus using the same and method for manufacturing the same |
| JP4849653B2 (en) * | 2004-04-22 | 2012-01-11 | 大阪シーリング印刷株式会社 | Temperature sensing member and temperature sensing method |
| JP6805088B2 (en) * | 2017-06-15 | 2020-12-23 | 日本電信電話株式会社 | Optical waveguide and its manufacturing method |
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| Publication number | Publication date |
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