JP3269720B2 - Superconducting integrated circuits - Google Patents
Superconducting integrated circuitsInfo
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- JP3269720B2 JP3269720B2 JP30027593A JP30027593A JP3269720B2 JP 3269720 B2 JP3269720 B2 JP 3269720B2 JP 30027593 A JP30027593 A JP 30027593A JP 30027593 A JP30027593 A JP 30027593A JP 3269720 B2 JP3269720 B2 JP 3269720B2
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- Prior art keywords
- superconducting
- resistance element
- wiring
- substrate
- ground layer
- Prior art date
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Description
【０００１】[0001]
【産業上の利用分野】本発明は超伝導デバイス及び抵抗
素子を有し、寒剤内で使用される超伝導集積回路に関す
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a superconducting integrated circuit having a superconducting device and a resistance element and used in a cryogen.
【０００２】超伝導集積回路においては、抵抗素子、特
に大きな抵抗値をもつサプライ抵抗素子の発熱の影響が
超伝導デバイスに及ばないようにすることが必要であ
る。In a superconducting integrated circuit, it is necessary to prevent the influence of heat generated by a resistance element, particularly a supply resistance element having a large resistance value, from affecting the superconducting device.
【０００３】[0003]
【従来の技術】図１２は従来の１例の超伝導集積回路１
０の一部の断面を示す。図１３は図１２に示す回路構造
を模式的に示す。FIG. 12 shows a conventional superconducting integrated circuit 1 as an example.
0 shows a partial cross section. FIG. 13 schematically shows the circuit structure shown in FIG.
【０００４】各図中、１１はＳｉ基板である。In each figure, reference numeral 11 denotes a Si substrate.
【０００５】Ｓｉ基板１１上に、順に、超伝導接地層１
２、ＳｉＯ2 の絶縁膜１３、サプライ抵抗素子１４、第
１の超伝導配線１５、ジョセフソン素子１６、ＳｉＯ2
の絶縁膜１７、及び第２の超伝導配線１８を有する。[0005] The superconducting ground layer 1 is sequentially formed on the Si substrate 11.
2, insulating film 13 of SiO 2 , supply resistance element 14, first superconducting wiring 15, Josephson element 16, SiO 2
, And a second superconducting wiring 18.
【０００６】図１２には示されていないけれども、Ｓｉ
基板１１上に、図１３に示すように、負荷抵抗素子１９
及び次段のジョセフソン素子２０を更に有する。[0006] Although not shown in FIG.
On the substrate 11, as shown in FIG.
And a Josephson element 20 at the next stage.
【０００７】ゲート電流は、第１の超伝導配線１５及び
サプライ抵抗素子１４を通って、ジョセフソン素子１６
へ供給される。The gate current passes through the first superconducting wiring 15 and the supply resistance element 14 and passes through the Josephson element 16.
Supplied to
【０００８】ジョセフソン素子１６が零電圧状態にある
ときには、ゲート電流は、ジョセフソン素子１６内を通
り、第２の超伝導配線１８を通って、超伝導接地層１２
へ流れる。When the Josephson device 16 is in the zero voltage state, the gate current passes through the Josephson device 16, through the second superconducting wiring 18, and through the superconducting ground layer 12.
Flows to
【０００９】ジョセフソン素子１６が電圧状態にあると
きには、電流の殆どは負荷抵抗素子１９を流れて、超伝
導接地層１２へ流れる。When Josephson element 16 is in a voltage state, most of the current flows through load resistance element 19 and to superconducting ground layer 12.
【００１０】ここで、負荷抵抗素子１９の抵抗値は８Ω
程度と小さいけれども、サプライ抵抗素子１４の抵抗値
は例えば６０Ωと大きい。サプライ抵抗素子１４の抵抗
値を大きく定めている理由は、ジョセフソン素子１６が
零電圧状態から電圧状態にスイッチしたとき（抵抗値が
変化したとき）の影響が配線１５を通って他のジョセフ
ソン素子に及ばないようにするためである。Here, the resistance value of the load resistance element 19 is 8Ω.
Although small, the resistance value of the supply resistance element 14 is large, for example, 60Ω. The reason why the resistance value of the supply resistance element 14 is set to a large value is that the effect when the Josephson element 16 switches from the zero voltage state to the voltage state (when the resistance value changes) passes through the wiring 15 to another Josephson element. This is so as not to reach the element.
【００１１】このため、ゲート電流を０．４ｍＡとする
と、サプライ抵抗素子１４の発熱量は１０μＷ程度とな
り大きい。For this reason, when the gate current is 0.4 mA, the heat value of the supply resistance element 14 is as large as about 10 μW.
【００１２】回路１０は、超伝導電極や配線としてＮｂ
を用いる場合、液体ヘリウム中に浸漬されて冷却された
状態で使用される。The circuit 10 includes Nb as a superconducting electrode or wiring.
When used, it is used after being immersed in liquid helium and cooled.
【００１３】[0013]
【発明が解決しようとする課題】図１２に示すように、
サプライ抵抗素子１４は、Ｓｉ基板１１に対して、超伝
導接地層１２及び絶縁膜１３を介して設けてあり、絶縁
膜１３と絶縁膜１７とに挟まれている。As shown in FIG.
The supply resistance element 14 is provided on the Si substrate 11 via the superconducting ground layer 12 and the insulating film 13, and is sandwiched between the insulating film 13 and the insulating film 17.
【００１４】温度４．２ＫにおけるＳｉＯ2 の熱伝導率
は、２．５×１０-3（Ｗ／ｃｍ Ｋ）であり、相当に小
さい。The thermal conductivity of SiO 2 at a temperature of 4.2 K is 2.5 × 10 −3 (W / cm K), which is considerably small.
【００１５】このため、サプライ抵抗素子１４から面方
向上周囲の方向へ伝わる熱量は少なく、サプライ抵抗素
子１４の個所で局所的な温度上昇が生じ易い。For this reason, the amount of heat transmitted from the supply resistance element 14 in the peripheral direction on the surface is small, and a local temperature rise is likely to occur at the location of the supply resistance element 14.
【００１６】サプライ抵抗素子１４の個所の局所的な温
度上昇が生ずると、サプライ抵抗素子１４の真上の部分
から液体ヘリウムへの熱の流れが増大する。液体ヘリウ
ムの場合、単位面積あたり０．５Ｗ／ｃｍ2 以下の熱流
束に対しては、液体ヘリウムは核沸騰状態となり界面で
の温度差も０．５Ｋ程度である。しかし、それ以上の熱
流束に対しては、液体ヘリウムは膜沸騰状態となり、界
面の温度差は数Ｋに上昇する。When a local temperature rise at the supply resistance element 14 occurs, the flow of heat from the portion directly above the supply resistance element 14 to the liquid helium increases. In the case of liquid helium, for a heat flux of 0.5 W / cm 2 or less per unit area, the liquid helium becomes a nucleate boiling state and the temperature difference at the interface is about 0.5K. However, for a higher heat flux, the liquid helium enters a film boiling state, and the temperature difference at the interface increases to several K.
【００１７】このため、場合によっては、液体ヘリウム
がサプライ抵抗素子１４の個所で核沸騰の状態を越えて
膜沸騰を起こし、図１２中の符号２１で示すように、回
路１０全体の表面が薄い沸騰ガスによって覆われ、回路
１０が液体ヘリウムによって冷却されにくい状態とな
り、回路１０の平衡温度が数Ｋ程度上昇してしまう。Therefore, in some cases, the liquid helium exceeds the state of nucleate boiling at the location of the supply resistance element 14 and causes film boiling, and as shown by reference numeral 21 in FIG. 12, the surface of the entire circuit 10 is thin. The circuit 10 is covered with the boiling gas, so that the circuit 10 is hardly cooled by the liquid helium, and the equilibrium temperature of the circuit 10 increases by about several K.
【００１８】この場合には、ジョセフソン素子１６の臨
界電流やギャップ電圧が低下し、ジョセフソン素子１６
の特性が劣化したり、超伝導状態が破壊されたりして、
回路１０が誤動作を起こしてしまう虞れがある。In this case, the critical current and the gap voltage of the Josephson device 16 decrease, and the Josephson device 16
Of the superconducting state is degraded,
There is a possibility that the circuit 10 may malfunction.
【００１９】そこで、本発明は上記課題を解決した超伝
導集積回路を提供することを目的とする。Therefore, an object of the present invention is to provide a superconducting integrated circuit which has solved the above-mentioned problems.
【００２０】[0020]
【課題を解決するための手段】請求項１の発明は、超伝
導デバイスと、該超伝導デバイスに電流を供給する第１
の超伝導配線と、該第１の超伝導配線の途中に設けられ
た抵抗素子と、超伝導接地層と、該超伝導デバイスを該
超伝導接地層に接続する第２の超伝導配線と、基板とを
有し、寒剤内で使用される超伝導集積回路において、上
記抵抗素子を、上記基板と直接接して設けた構成とした
ものである。According to a first aspect of the present invention, there is provided a superconducting device and a first device for supplying a current to the superconducting device.
A superconducting wiring, a resistance element provided in the middle of the first superconducting wiring, a superconducting ground layer, and a second superconducting wiring connecting the superconducting device to the superconducting ground layer. A superconducting integrated circuit having a substrate and used in a cryogen, wherein the resistance element is provided in direct contact with the substrate.
【００２１】請求項２の発明は、超伝導デバイスと、該
超伝導デバイスに電流を供給する第１の超伝導配線と、
該第１の超伝導配線の途中に設けられた抵抗素子と、超
伝導接地層と、該超伝導デバイスを該超伝導接地層に接
続する第２の超伝導配線と、基板とを有し、寒剤内で使
用される超伝導集積回路において、上記抵抗素子が、上
記基板と直接接しており、且つ上記超伝導接地層が、上
記抵抗素子を覆う構成としたものである。According to a second aspect of the present invention, there is provided a superconducting device, a first superconducting wiring for supplying a current to the superconducting device,
A resistance element provided in the middle of the first superconducting wiring, a superconducting ground layer, a second superconducting wiring connecting the superconducting device to the superconducting ground layer, and a substrate, In the superconducting integrated circuit used in the cryogen, the resistance element is in direct contact with the substrate, and the superconducting ground layer covers the resistance element.
【００２２】請求項３の発明は、超伝導デバイスと、該
超伝導デバイスに電流を供給する第１の超伝導配線と、
該第１の超伝導配線の途中に設けられたサプライ抵抗素
子と、超伝導接地層と、該超伝導デバイスを該超伝導接
地層に接続する第２の超伝導配線と、基板とを有し、寒
剤内で使用される超伝導集積回路において、上記抵抗素
子が、上記基板と直接接しており、且つ上記超伝導接地
層が、上記抵抗素子及び上記第１の超伝導配線を覆う構
成としたものである。According to a third aspect of the present invention, there is provided a superconducting device, a first superconducting wiring for supplying a current to the superconducting device,
A supply resistance element provided in the middle of the first superconducting wiring, a superconducting ground layer, a second superconducting wiring connecting the superconducting device to the superconducting ground layer, and a substrate. A superconducting integrated circuit used in a cryogen, wherein the resistance element is in direct contact with the substrate, and the superconducting ground layer covers the resistance element and the first superconducting wiring. Things.
【００２３】[0023]
【作用】請求項１の抵抗素子が基板と直接接した構成
は、抵抗素子、特にサプライ抵抗素子で発生した熱が基
板側に逃げ易くするように作用する。The structure in which the resistive element is in direct contact with the substrate acts so that the heat generated in the resistive element, particularly the supply resistive element, can easily escape to the substrate side.
【００２４】請求項２の抵抗素子が基板と直接接し、且
つ超伝導接地層が上記抵抗素子を覆う構成は、抵抗素
子、特にサプライ抵抗素子で発生した熱が、基板に逃げ
易くすると共に、超伝導接地層内にも拡がって逃げるよ
うに作用する。According to a second aspect of the present invention, the resistance element is in direct contact with the substrate, and the superconducting ground layer covers the resistance element. It acts to spread and escape into the conductive ground layer.
【００２５】請求項３の抵抗素子が基板と直接接し、且
つ超伝導接地層が上記抵抗素子及び第１の超伝導配線を
覆う構成は、上記の請求項２の構成による作用に加え
て、第１の超伝導配線に流れる電流による影響が超伝導
デバイスに及ばないように作用する。According to the third aspect of the present invention, the structure in which the resistance element is in direct contact with the substrate and the superconducting ground layer covers the resistance element and the first superconducting wiring is provided in addition to the function of the second aspect. The superconducting device works so that the current flowing through the superconducting wiring does not affect the superconducting device.
【００２６】[0026]
【実施例】以下の実施例では、Ｎｂを用いたジョセフソ
ン回路を例にとって説明する。しかし、ジョセフソン素
子以外の超伝導トランジスタ等の超伝導デバイスについ
ても成り立つ特許である。したがって、Ｎｂ以外の超伝
導材料、Ｚｒ以外の抵抗材料、液体ヘリウム以外の寒剤
についても、本特許は効果がある。DESCRIPTION OF THE PREFERRED EMBODIMENTS In the following embodiments, a Josephson circuit using Nb will be described as an example. However, the patent holds for superconducting devices such as superconducting transistors other than Josephson elements. Therefore, the present patent is effective for superconducting materials other than Nb, resistance materials other than Zr, and cryogens other than liquid helium.
【００２７】〔第１実施例〕図１は本発明の第１実施例
になる超伝導集積回路３０の一部の断面を示し、図２は
図１中サプライ抵抗素子周りを示し、図３は図１に示す
回路構造を模式的に示す。First Embodiment FIG. 1 shows a cross section of a part of a superconducting integrated circuit 30 according to a first embodiment of the present invention, FIG. 2 shows the vicinity of a supply resistance element in FIG. 1, and FIG. 2 schematically shows the circuit structure shown in FIG.
【００２８】各図中、３１はＳｉの基板であり、厚さｔ
1 は約４００μｍである。Ｓｉ基板３１上に、順に、Ｚ
ｒのサプライ抵抗素子３２、ＳｉＯ2 の絶縁膜３３、Ｎ
ｂの超伝導接地層３４、ＳｉＯ2 の絶縁膜３５、Ｎｂの
第１の超伝導主配線３６-1、Ｎｂの第１の超伝導分岐配
線３６-2、ジョセフソン素子３７、ＳｉＯ2 の絶縁膜３
８、Ｎｂの第２の超伝導配線３９を有する。In each of the figures, reference numeral 31 denotes a substrate made of Si having a thickness t.
1 is about 400 μm. Z on the Si substrate 31
r supply resistance element 32, SiO 2 insulating film 33, N
b, superconducting ground layer 34, insulating film 35 of SiO 2 , first superconducting main wiring 36 -1 of Nb, first superconducting branch wiring 36 -2 of Nb, Josephson element 37, insulation of SiO 2 Membrane 3
8, a second superconducting wiring 39 of Nb.
【００２９】ジョセフソン素子３７は、下部電極３７ａ
と、トンネルバリア３７ｂと、上部電極３７ｃとよりな
る。The Josephson element 37 has a lower electrode 37a.
And a tunnel barrier 37b and an upper electrode 37c.
【００３０】サプライ抵抗素子３２は、基板３１と直接
接して設けてある。The supply resistance element 32 is provided in direct contact with the substrate 31.
【００３１】なお、図１には示されていないけれども、
Ｓｉ基板１１上に、図３に示すように、負荷抵抗素子４
０及び次段のジョセフソン素子４１を更に有する。Although not shown in FIG. 1,
As shown in FIG. 3, the load resistance element 4
It further has a Josephson element 41 at the 0 and the next stage.
【００３２】第１の超伝導主配線３６-1と第１の超伝導
分岐配線３６-2とが第１の超伝導配線を構成する。The first superconducting main wiring 36-1 and the first superconducting branch wiring 36-2 constitute a first superconducting wiring.
【００３３】超伝導接地層３４は、サプライ抵抗素子３
２に対向する部位には、開口４５が形成してある。The superconducting ground layer 34 is formed of the supply resistance element 3
An opening 45 is formed in a portion facing 2.
【００３４】開口４５の内部において、サプライ抵抗素
子３２の両端が夫々一の超伝導配線３６-1，３６-2と接
続してある。４６，４７は接続部としてのＮｂの電極で
あるが、接地面３４と同一層を孤立パターンに加工する
ことにより形成する。Inside the opening 45, both ends of the supply resistance element 32 are connected to one superconducting wiring 36 -1 and 36 -2 , respectively. Reference numerals 46 and 47 denote Nb electrodes as connection portions, which are formed by processing the same layer as the ground plane 34 into an isolated pattern.
【００３５】第２の超伝導配線３９は、超伝導接地層３
４と接続してある。The second superconducting wiring 39 is formed of the superconducting ground layer 3
4 is connected.
【００３６】次に、サプライ抵抗素子３２の形成の仕方
について説明する。Next, a method of forming the supply resistance element 32 will be described.
【００３７】 Ｓｉ基板３１をＡｒ雰囲気中でスパッ
タクリーニングする。The Si substrate 31 is sputter cleaned in an Ar atmosphere.
【００３８】スパッタクリーニングは、Ａｒ圧１．３Ｐ
ａ、印加電圧４００Ｖ、時間１分程度の条件で行う。The sputter cleaning is performed at an Ar pressure of 1.3 P
a, an applied voltage of 400 V and a time of about 1 minute.
【００３９】これにより、Ｓｉ基板３１の表面にある自
然酸化膜が除去される。Thus, the natural oxide film on the surface of the Si substrate 31 is removed.
【００４０】 次いで、直流スパッタ法によりＺｒを
スパッタリングする。Next, Zr is sputtered by a DC sputtering method.
【００４１】 反応性イオンエッチングによりエッチ
ングして、サプライ抵抗素子３２をパターニングする。The supply resistance element 32 is patterned by etching by reactive ion etching.
【００４２】サプライ抵抗素子３２と、Ｓｉ基板３１と
の間には、自然酸化膜が存在しておらず、サプライ抵抗
素子３２は真にＳｉ基板３１と接触している。There is no natural oxide film between the supply resistance element 32 and the Si substrate 31, and the supply resistance element 32 is actually in contact with the Si substrate 31.
【００４３】なお、数ｍｍ厚の自然酸化膜や、意図的に
形成した絶縁膜などが抵抗素子と基板の間に存在する構
造も可能である。しかし、その膜厚の増加と共に本発明
の効果は減少する。A structure in which a natural oxide film having a thickness of several mm, an insulating film formed intentionally, or the like exists between the resistance element and the substrate is also possible. However, the effect of the present invention decreases as the film thickness increases.
【００４４】次に、上記回路３０の動作時の状況につい
て説明する。Next, the situation during the operation of the circuit 30 will be described.
【００４５】回路３０は、電気的には、図１３に示す従
来のものと同様に動作し、特にサプライ抵抗素子３２が
ゲート電流によって発熱する。Circuit 30 electrically operates similarly to the conventional one shown in FIG. 13, and in particular, supply resistance element 32 generates heat due to a gate current.
【００４６】サプライ抵抗素子３２はＳｉ基板３１に直
接接しており、Ｓｉ基板３１の熱伝導率は１．３（Ｗ／
ｃｍ Ｋ）と、ＳｉＯ2 の絶縁膜３３の熱伝導率に比べ
て、約５００倍大きい。また、Ｓｉ基板３１の厚さｔ1
は約４００μｍであり、絶縁膜に比べるとはるかに厚
い。The supply resistance element 32 is in direct contact with the Si substrate 31, and the thermal conductivity of the Si substrate 31 is 1.3 (W /
cm K), which is about 500 times larger than the thermal conductivity of the SiO 2 insulating film 33. Also, the thickness t 1 of the Si substrate 31
Is about 400 μm, which is much thicker than the insulating film.
【００４７】このため、サプライ抵抗素子３２で発生し
た熱は、図１中、矢印５０で示すように、直ちに基板３
１に伝わって、基板３１内を面方向に拡がるようにすみ
やかに伝導して周囲に拡散される。Therefore, the heat generated by the supply resistance element 32 is immediately transferred to the substrate 3 as shown by an arrow 50 in FIG.
1 and is rapidly conducted so as to spread in the plane direction within the substrate 31 and diffused to the surroundings.
【００４８】これによって、サプライ抵抗素子３２で発
生した熱の大部分は、基板３１側に逃げる。As a result, most of the heat generated in the supply resistance element 32 escapes to the substrate 31 side.
【００４９】このため、絶縁膜３８のうちサプライ抵抗
素子３２の真上の部分３８ａにおける局所的な温度上昇
が従来に比べて抑制される。Therefore, the local temperature rise in the portion 38a of the insulating film 38 directly above the supply resistance element 32 is suppressed as compared with the conventional case.
【００５０】このため、部分３８ａから液体ヘリウムの
熱流束が小さくなり、液体ヘリウムは核沸騰にとどま
り、膜沸騰状態には到らない。For this reason, the heat flux of the liquid helium from the portion 38a becomes small, and the liquid helium remains at the nucleate boiling and does not reach the film boiling state.
【００５１】また、基板３１側についてみるに、サプラ
イ抵抗素子３２から伝わった熱が基板３１に拡がり、局
所的に温度が上昇することはない。As for the substrate 31 side, the heat transmitted from the supply resistance element 32 spreads to the substrate 31 and the temperature does not rise locally.
【００５２】このため、基板３１側に接している液体ヘ
リウムは、自然対流状態となる。Therefore, the liquid helium in contact with the substrate 31 enters a natural convection state.
【００５３】従って、回路３０のどの部分でも膜沸騰は
起きず、ジョセフソン素子３７は液体ヘリウムによって
正常に冷却され、特性劣化は起きず、回路３０は誤動作
を起こさず、正常に動作し続ける。Therefore, no film boiling occurs in any part of the circuit 30, the Josephson element 37 is normally cooled by the liquid helium, the characteristics do not deteriorate, and the circuit 30 does not malfunction and continues to operate normally.
【００５４】〔第２実施例〕図４は本発明の第２実施例
になる超伝導集積回路３０Ａの一部の断面を示し、図５
は図４中、サプライ抵抗素子周りを示し、図６は図４に
示す回路構造を模式的に示す。[Second Embodiment] FIG. 4 shows a partial cross section of a superconducting integrated circuit 30A according to a second embodiment of the present invention.
4 shows the periphery of the supply resistance element in FIG. 4, and FIG. 6 schematically shows the circuit structure shown in FIG.
【００５５】回路３０Ａは、超伝導接地層３４Ａ以外
は、図１及び図２の回路３０と同じ構造であり、対応す
る部分には同一符号を付し、その説明は省略する。The circuit 30A has the same structure as that of the circuit 30 of FIGS. 1 and 2 except for the superconducting ground layer 34A. Corresponding portions have the same reference characters allotted, and description thereof will not be repeated.
【００５６】超伝導接地層３４Ａは、接続部４６の個所
を開口６０、接続部４７の個所を開口６１とされ、開口
６０と開口６１との間の部分３４Ａａが、サプライ抵抗
素子３２の中央部分を覆っている。The superconducting ground layer 34A has an opening 60 at the connecting portion 46 and an opening 61 at the connecting portion 47. A portion 34Aa between the opening 60 and the opening 61 is formed at a central portion of the supply resistance element 32. Is covered.
【００５７】Ｎｂよりなる超伝導接地層３４Ａの熱伝導
率は０．２６（Ｗ／ｃｍ Ｋ）であり、ＳｉＯ2 の絶縁
膜の熱伝導率に比べて、約１００倍大きい。The thermal conductivity of the superconducting ground layer 34A made of Nb is 0.26 (W / cmK), which is about 100 times larger than the thermal conductivity of the SiO 2 insulating film.
【００５８】このため、サプライ抵抗素子３２で発生し
た熱は、図４中、矢印５０で示すように、下側の基板３
１に伝わって基板３１内を面方向に拡がるようにすみや
かに伝導して周囲に拡散されると共に、矢印６２で示す
ように、上側の超伝導接地層３４Ａの一部３４Ａａに伝
わって超伝導接地層３４Ａ内を面方向に拡がるようにす
みかに伝導して拡散される。For this reason, the heat generated in the supply resistance element 32 is transferred to the lower substrate 3 as shown by an arrow 50 in FIG.
1 and spreads in the plane of the substrate 31 in the plane direction, and is immediately diffused to the surroundings. As indicated by an arrow 62, it is transmitted to a part 34Aa of the upper superconducting ground layer 34A to form It is immediately conducted and diffused so as to spread in the plane direction in the formation 34A.
【００５９】このため、回路３０Ａのうち、サプライ抵
抗素子３２の部位の局所的な温度上昇は上記の第１実施
例の回路３０の場合より抑制され、膜沸騰は起きにくく
なり、回路３０Ａは正常に動作し続ける。For this reason, in the circuit 30A, the local temperature rise in the portion of the supply resistance element 32 is suppressed more than in the case of the circuit 30 of the first embodiment, the film boiling is less likely to occur, and the circuit 30A operates normally. Continue to work.
【００６０】〔第３実施例〕図７は本発明の第３実施例
になる超伝導集積回路３０Ｂの一部の断面を示し、図８
は図７中、サプライ抵抗素子周りを示す。FIG. 7 shows a cross section of a part of a superconducting integrated circuit 30B according to a third embodiment of the present invention.
7 shows the periphery of the supply resistance element in FIG.
【００６１】回路３０Ｂは、上記の第２実施例の変形例
的なものであり、引出し電極７０，７１及び超伝導接地
層３４Ｂ以外は、図４及び図５の回路３０Ａと略同じ構
造であり、対応する部分には同一符号を付し、その説明
は省略する。The circuit 30B is a modification of the second embodiment, and has substantially the same structure as the circuit 30A of FIGS. 4 and 5 except for the extraction electrodes 70 and 71 and the superconducting ground layer 34B. Corresponding parts have the same reference characters allotted, and description thereof will not be repeated.
【００６２】Ｎｂから成る引出し電極７０，７１は、サ
プライ抵抗素子３２の両端より引き出されている。The lead electrodes 70 and 71 made of Nb are drawn from both ends of the supply resistance element 32.
【００６３】第１の超伝導主配線３６-1は引出し電極７
０の端と接続してあり、第１の超伝導分岐配線３６-2は
引出し電極７１の端と接続してある。７２，７３は接続
部である。The first superconducting main wiring 36-1 is connected to the extraction electrode 7
0, and the first superconducting branch wiring 36-2 is connected to the end of the extraction electrode 71. 72 and 73 are connection parts.
【００６４】７４，７５は超伝導接地層３４の開口であ
り、接続部７２，７３の部位に形成してある。Reference numerals 74 and 75 are openings in the superconducting ground layer 34, which are formed at the connection portions 72 and 73.
【００６５】接続部７２，７３がサプライ抵抗素子３２
から外れた部位にあり、これに伴って、開口７４，７５
もサプライ抵抗素子３２から外れた部位にあることか
ら、超伝導接地層３４Ｂのうち開口７４，７５の間の部
分３４Ｂａがサプライ抵抗素子３２全体を覆っている。The connection parts 72 and 73 are connected to the supply resistance element 32.
From the opening 74, 75
Also, the portion 34Ba of the superconducting ground layer 34B between the openings 74 and 75 covers the entire supply resistance element 32 because it is located outside the supply resistance element 32.
【００６６】このため、矢印６２で示す熱の伝導拡散
は、図４の回路３０Ａに比べて、よりすみやかに行われ
る。Therefore, the heat diffusion indicated by the arrow 62 is performed more promptly as compared with the circuit 30A of FIG.
【００６７】これにより、回路３０Ｂのうち、サプライ
抵抗素子３２の部位の局所的な温度上昇は、上記の第２
実施例の回路３０Ａの場合より更に抑制され、膜沸騰は
より起こりにくく、回路３０Ｂは正常に動作し続ける。As a result, in the circuit 30B, the local temperature rise in the portion of the supply resistance element 32 is caused by the second
The circuit 30A is further suppressed than in the case of the circuit 30A of the embodiment, film boiling is less likely to occur, and the circuit 30B continues to operate normally.
【００６８】〔第４実施例〕図９は本発明の第４実施例
になる超伝導集積回路３０Ｃの一部の断面を示し、図１
０は図９中サプライ抵抗素子周りを示し、図１１は図９
の回路構造を模式的に示す。Fourth Embodiment FIG. 9 shows a cross section of a part of a superconducting integrated circuit 30C according to a fourth embodiment of the present invention.
9 shows the vicinity of the supply resistance element in FIG. 9, and FIG.
1 schematically shows the circuit structure of FIG.
【００６９】回路３０Ｃは、上記第３実施例の変形例的
なものであり、図７に示す構成部分と対応する部分には
同一符号を付す。The circuit 30C is a modification of the third embodiment, and portions corresponding to those shown in FIG. 7 are denoted by the same reference numerals.
【００７０】サプライ抵抗素子３２の右端は、引出し電
極７１、及び開口７５内の接続部７３を介して、第１の
超伝導配線３６-2と接続してある。The right end of the supply resistance element 32 is connected to the first superconducting wiring 36-2 via the extraction electrode 71 and the connection portion 73 in the opening 75.
【００７１】第１の超伝導配線３６Ｃ-1は、基板３１上
に形成してあり、サプライ抵抗素子３２の左端と接続し
てある。The first superconducting wiring 36C- 1 is formed on the substrate 31 and is connected to the left end of the supply resistance element 32.
【００７２】超伝導接地層３４Ｃは、開口７５を一つだ
け有し、この開口７５はサプライ抵抗素子３２より右方
にずれて位置している。The superconducting ground layer 34C has only one opening 75, and the opening 75 is located rightwardly shifted from the supply resistance element 32.
【００７３】超伝導接地層３４Ｃのうち、部分３４Ｃａ
が、サプライ抵抗素子３２の全体を覆っている。また、
開口７５は一個所だけにある。The portion 34Ca of the superconducting ground layer 34C
Covers the entire supply resistance element 32. Also,
There is only one opening 75.
【００７４】このため、サプライ抵抗素子３２から超伝
導接地層３４Ｂへの熱の伝導についてみると、矢印６２
に加えて、矢印６３で示すように左方にも伝わって拡散
する。Therefore, regarding the conduction of heat from the supply resistance element 32 to the superconducting ground layer 34B, the arrow 62
In addition, as shown by the arrow 63, the light is transmitted to the left and diffused.
【００７５】これにより、回路３０Ｃのうち、サプライ
抵抗素子３２の部位の局所的な温度上昇は、上記の第３
実施例の回路３０Ｂの場合より更に抑制され、膜沸騰は
より起こりにくく、回路３０Ｃは正常に動作し続ける。As a result, in the circuit 30C, the local temperature rise in the portion of the supply resistance element 32 is caused by the third
The circuit 30B is further suppressed than in the case of the circuit 30B of the embodiment, film boiling is less likely to occur, and the circuit 30C continues to operate normally.
【００７６】また、超伝導接地層３４Ｃのうち、部分３
４Ｃｂが、第１の超伝導主配線３６Ｃ-1を覆っている。In the superconducting ground layer 34C, the portion 3
4Cb covers the first superconducting main wiring 36C- 1 .
【００７７】このため、配線３６Ｃ-1に大電流が流れた
ときに発生したノイズは超伝導接地層３４Ｃにより遮蔽
され、ジョセフソン素子３７までには到らず、ジョセフ
ソン素子３７に対するノイズの影響は軽減される。For this reason, noise generated when a large current flows through the wiring 36C- 1 is shielded by the superconducting ground layer 34C, does not reach the Josephson element 37, and influences the noise on the Josephson element 37. Is reduced.
【００７８】このため、ジョセフソン素子３７は、配線
３６Ｃ-1からのノイズの影響を殆ど受けず、この点でも
ジョセフソン素子３７は正常に動作し、回路３０Ｃは正
常に動作し続ける。Therefore, the Josephson element 37 is hardly affected by the noise from the wiring 36C- 1, and the Josephson element 37 operates normally and the circuit 30C continues to operate normally also at this point.
【００７９】[0079]
【発明の効果】以上説明したように、請求項１の発明に
よれば、サプライ抵抗素子で発生した熱が基板内へ拡が
って効率良く逃げ、これによってサプライ抵抗素子の個
所で局所的な温度の上昇を効果的に抑えることが出来
る。これにより、寒剤がサプライ抵抗素子の個所で膜沸
騰を起こすことを効果的に防止することが出来る。これ
によって超伝導デバイスが特性の劣化を起こしたり、誤
動作を起こしたりすることを効果的に防止することが出
来る。As described above, according to the first aspect of the present invention, the heat generated in the supply resistance element spreads into the substrate and escapes efficiently, whereby the local temperature of the supply resistance element is reduced. The rise can be suppressed effectively. Thereby, it is possible to effectively prevent the cryogen from causing the film boiling at the location of the supply resistance element. As a result, it is possible to effectively prevent the superconducting device from deteriorating its characteristics and causing malfunction.
【００８０】請求項２の発明によれば、サプライ抵抗素
子で発生した熱が、基板に加えて超伝導接地層内にも拡
がって逃げるため、サプライ抵抗素子の個所での局所的
な温度の上昇を、請求項１の発明に比べて、更に効果的
に抑えることが出来る。これにより、寒剤がサプライ抵
抗素子の個所で膜沸騰を起こすことを更に効果的に防止
することが出来る。これにより、起伝導デバイスの特性
劣化及び誤動作を、請求項１の発明よりも更に効果的に
防止することが出来る。According to the second aspect of the present invention, since the heat generated in the supply resistance element spreads to the superconducting ground layer in addition to the substrate and escapes, the local rise in temperature at the location of the supply resistance element is achieved. Can be more effectively suppressed as compared with the first aspect of the present invention. As a result, it is possible to more effectively prevent the cryogen from causing film boiling at the location of the supply resistance element. As a result, the characteristic deterioration and malfunction of the electromotive device can be more effectively prevented than in the first aspect of the present invention.
【００８１】請求項３の発明によれば、請求項２の発明
による効果に加えて、超伝導デバイスが超伝導配線層に
よるノイズの影響を受けにくくするようにすることが出
来、これによって、超伝導デバイスの特性劣化及び誤動
作を更に効果的に防止することが出来る。According to the invention of claim 3, in addition to the effect of the invention of claim 2, it is possible to make the superconducting device less susceptible to the influence of noise due to the superconducting wiring layer. Deterioration of characteristics and malfunction of the conduction device can be prevented more effectively.
【図１】本発明の超伝導集積回路の第１実施例の断面図
である。FIG. 1 is a sectional view of a first embodiment of a superconducting integrated circuit of the present invention.
【図２】図１中、サプライ抵抗素子の周りの平面図であ
る。FIG. 2 is a plan view around a supply resistance element in FIG.
【図３】図１の回路構造を模式的に示す図である。FIG. 3 is a diagram schematically showing the circuit structure of FIG. 1;
【図４】本発明の超伝導集積回路の第２実施例の断面図
である。FIG. 4 is a sectional view of a second embodiment of the superconducting integrated circuit of the present invention.
【図５】図４中、サプライ抵抗素子周りの平面図であ
る。FIG. 5 is a plan view around a supply resistance element in FIG. 4;
【図６】図４の回路構造を模範的に示す図である。FIG. 6 is a diagram schematically illustrating the circuit structure of FIG. 4;
【図７】本発明の超伝導集積回路の第３実施例の断面図
である。FIG. 7 is a sectional view of a third embodiment of the superconducting integrated circuit of the present invention.
【図８】図７中、サプライ抵抗素子周りの平面図であ
る。FIG. 8 is a plan view around a supply resistance element in FIG. 7;
【図９】本発明の超伝導集積回路の第４実施例の断面図
である。FIG. 9 is a sectional view of a fourth embodiment of the superconducting integrated circuit of the present invention.
【図１０】図９中、サプライ抵抗素子周りの平面図であ
る。FIG. 10 is a plan view around a supply resistance element in FIG. 9;
【図１１】図９の回路構造を模式的に示す図である。FIG. 11 is a diagram schematically showing the circuit structure of FIG. 9;
【図１２】従来の超伝導集積回路の断面図である。FIG. 12 is a sectional view of a conventional superconducting integrated circuit.
【図１３】図１２の回路構造を模式的に示す図である。FIG. 13 is a diagram schematically showing the circuit structure of FIG. 12;
３０，３０Ａ，３０Ｂ，３０Ｃ 超伝導集積回路 ３１ Ｓｉ基板 ３２ Ｚｒのサプライ抵抗素子 ３３，３５，３８ ＳｉＯ2 絶縁膜 ３４，３４Ａ，３４Ｂ，３４Ｃ，Ｎｂ 超伝導接地層 ３４Ａａ，３４Ｂａ，３４Ｃａ，３４Ｃｂ 部分 ３６-1，３６Ｃ-1 Ｎｂの第１の超伝導主配線 ３６-2 Ｎｂの第１の超伝導分岐配線 ３７ ジョセフソン素子 ３８ ＳｉＯ2 の絶縁膜 ３９ Ｎｂの第２の超伝導配線 ４０ 負荷抵抗 ４１ 次段のジョセフソン素子 ４５ 開口 ４６，４７，７２，７３ 接続部 ５０，６２，６３ 熱の流れを示す矢印 ６０，６１，７４，７５ 開口 ７０，７３ 引出し電極30, 30A, 30B, 30C superconducting integrated circuit 31 Si substrate 32 Zr supply resistive element 33,35,38 SiO 2 insulating films 34,34A, 34B, 34C, Nb superconducting ground layer 34Aa, 34Ba, 34Ca, 34Cb portion 36 -1, 36C -1 Nb first superconductive main wiring 36 -2 Nb first second superconducting wire 40 the load resistance of the superconducting branch wiring 37 insulating film 39 of the Josephson device 38 SiO 2 Nb of 41 Josephson element of next stage 45 Opening 46, 47, 72, 73 Connection 50, 62, 63 Arrow showing heat flow 60, 61, 74, 75 Opening 70, 73 Extraction electrode
───────────────────────────────────────────────────── フロントページの続き (58)調査した分野(Int.Cl.7，ＤＢ名) H01L 39/22 - 39/24 H01L 39/00 ──────────────────────────────────────────────────続 き Continued on front page (58) Field surveyed (Int.Cl. 7 , DB name) H01L 39/22-39/24 H01L 39/00
Claims (3)
バイスに電流を供給する第１の超伝導配線（３６-1〜３
６-2）と、該第１の超伝導配線の途中に設けられた抵抗
素子（３２）と、超伝導接地層（３４）と、該超伝導デ
バイスを該超伝導接地層に接続する第２の超伝導配線
（３９）と、基板（３１）とを有し、寒剤内で使用され
る超伝導集積回路において、 上記抵抗素子（３２）を、上記基板（３１）と直接接し
て設けた構成としたことを特徴とする超伝導集積回路。A superconducting device (37) and first superconducting wiring (36 -1 to 36 -1 ) for supplying a current to the superconducting device.
6-2 ), a resistance element (32) provided in the middle of the first superconducting wiring, a superconducting ground layer (34), and a second connecting the superconducting device to the superconducting ground layer. A superconducting integrated circuit having a superconducting wiring (39) and a substrate (31), wherein the resistance element (32) is provided in direct contact with the substrate (31). A superconducting integrated circuit characterized by the following.
電流を供給する第１の超伝導配線と、該第１の超伝導配
線の途中に設けられた抵抗素子と、超伝導接地層と、該
超伝導デバイスを該超伝導接地層に接続する第２の超伝
導配線と、基板とを有し、寒剤内で使用される超伝導集
積回路において、 上記抵抗素子（３２）が、上記基板（３１）と直接接し
ており、 且つ上記超伝導接地層（３４Ａａ，３４Ｂａ）が、上記
抵抗素子（３２）を覆う構成としたことを特徴とする超
伝導集積回路。2. A superconducting device, a first superconducting wiring for supplying a current to the superconducting device, a resistance element provided in the middle of the first superconducting wiring, a superconducting ground layer, A superconducting integrated circuit having a substrate and a second superconducting wiring connecting the superconducting device to the superconducting ground layer, wherein the resistive element (32) is provided in the substrate ( 31. A superconducting integrated circuit, wherein said superconducting ground layer (34Aa, 34Ba) covers said resistance element (32) directly in contact with said superconducting ground.
電流を供給する第１の超伝導配線と、該第１の超伝導配
線の途中に設けられた抵抗素子と、超伝導接地層と、該
超伝導デバイスを該超伝導接地層に接続する第２の超伝
導配線と、基板とを有し、寒剤内で使用される超伝導集
積回路において、 上記抵抗素子（３２）が、上記基板（３１）と直接接し
ており、 且つ上記超伝導接地層（３４Ｃａ，３４Ｃｂ）が、上記
抵抗素子（３２）及び上記第１の超伝導配線（３６-1）
を覆う構成としたことを特徴とする超伝導集積回路。3. A superconducting device, a first superconducting wiring for supplying a current to the superconducting device, a resistance element provided in the middle of the first superconducting wiring, a superconducting ground layer, A superconducting integrated circuit having a substrate and a second superconducting wiring for connecting the superconducting device to the superconducting ground layer, wherein the resistive element (32) is provided in the substrate ( 31) and the superconducting ground layer (34Ca, 34Cb) is connected to the resistance element (32) and the first superconducting wiring (36 -1 ).
A superconducting integrated circuit, characterized in that the superconducting integrated circuit is configured to cover the surface.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30027593A JP3269720B2 (en) | 1993-11-30 | 1993-11-30 | Superconducting integrated circuits |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30027593A JP3269720B2 (en) | 1993-11-30 | 1993-11-30 | Superconducting integrated circuits |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH07154003A JPH07154003A (en) | 1995-06-16 |
| JP3269720B2 true JP3269720B2 (en) | 2002-04-02 |
Family
ID=17882835
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP30027593A Expired - Fee Related JP3269720B2 (en) | 1993-11-30 | 1993-11-30 | Superconducting integrated circuits |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3269720B2 (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4977328B2 (en) * | 2005-03-28 | 2012-07-18 | 日本電気株式会社 | Superconducting random access memory and manufacturing method thereof |
| US11727295B2 (en) * | 2019-04-02 | 2023-08-15 | International Business Machines Corporation | Tunable superconducting resonator for quantum computing devices |
| US11621386B2 (en) * | 2019-04-02 | 2023-04-04 | International Business Machines Corporation | Gate voltage-tunable electron system integrated with superconducting resonator for quantum computing device |
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1993
- 1993-11-30 JP JP30027593A patent/JP3269720B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH07154003A (en) | 1995-06-16 |
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