JP3267983B2 - Semiconductor light emitting device and method of manufacturing the same - Google Patents
Semiconductor light emitting device and method of manufacturing the sameInfo
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- JP3267983B2 JP3267983B2 JP2115991A JP2115991A JP3267983B2 JP 3267983 B2 JP3267983 B2 JP 3267983B2 JP 2115991 A JP2115991 A JP 2115991A JP 2115991 A JP2115991 A JP 2115991A JP 3267983 B2 JP3267983 B2 JP 3267983B2
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- type
- emitting layer
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Description
【０００１】[0001]
【産業上の利用分野】本発明は、耐環境素子，可視発光
ダイオード等に使用する半導体発光素子に係わり、特に
六方晶型結晶構造を有する炭化珪素（ＳｉＣ）を用いた
半導体発光素子及びその製造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor light emitting device used for environment-resistant devices, visible light emitting diodes, etc., and more particularly to a semiconductor light emitting device using silicon carbide (SiC) having a hexagonal crystal structure and its manufacture. About the method.
【０００２】[0002]
【従来の技術】ＳｉＣ結晶は広い禁制帯幅を持ち（２．
２〜３，３ｅＶ）、且つｐｎ接合やＭＯＳ構造を容易に
作ることができる。このため、従来よりＳｉＣ結晶を用
いた青色，紫色の可視の発光ダイオードの研究がなされ
ている。2. Description of the Related Art SiC crystals have a wide forbidden band width (2.
2 to 3, 3 eV), and a pn junction or a MOS structure can be easily formed. For this reason, studies have been made on blue and purple visible light emitting diodes using SiC crystals.
【０００３】青色，紫色の領域の発光を行えるのは、六
方晶型の結晶構造を持つＳｉＣである。最も安定な６Ｈ
型の結晶を用いて、現在まで青色発光ダイオードが作ら
れている。しかし、ＳｉＣ結晶を用いた発光ダイオード
は発光光度が弱く、赤，緑色の発光ダイオードと並べて
使用しフルカラーディスプレイを形成することはできな
かった。[0003] SiC having a hexagonal crystal structure can emit light in the blue and purple regions. Most stable 6H
Blue light-emitting diodes have been made to date using type crystals. However, a light emitting diode using a SiC crystal has a low luminous intensity and cannot be used along with red and green light emitting diodes to form a full color display.
【０００４】この主たる原因は、ＳｉＣ結晶が図４に示
すように間接遷移型のバンド構造を有し、輻射遷移が起
こり難いといった物質固有の性質によるものである。ま
た、青色発光を得るために使用する不純物レベルが約２
２０ｅＶと浅く、十分にキャリアを捕獲できない。この
ため、結晶中の欠陥等の非輻射再結合過程の影響を受け
易く、またＳｉＣ結晶の成長方法が未だ確率されていな
いため欠陥が結晶中に多く存在し、これが発光光度を下
げる要因ともなっていた。[0004] The main reason for this is that the SiC crystal has an indirect transition type band structure as shown in FIG. 4 and the radiative transition is unlikely to occur. Also, the impurity level used to obtain blue light emission is about 2
As shallow as 20 eV, it cannot capture carriers sufficiently. For this reason, it is easily affected by non-radiative recombination processes such as defects in the crystal, and many defects exist in the crystal because the growth method of the SiC crystal has not been established yet, which is a factor that lowers the luminous intensity. Was.
【０００５】[0005]
【発明が解決しようとする課題】このように従来、Ｓｉ
Ｃ結晶を用いて青より短波長領域で発光を行う素子にお
いては、種々の要因により十分な発光強度を得ることは
できなかった。As described above, conventionally, Si
In an element that emits light in a shorter wavelength region than blue using a C crystal, a sufficient emission intensity cannot be obtained due to various factors.
【０００６】本発明は、このような事情を考慮してなさ
れたもので、その目的とするところは、ＳｉＣ結晶を用
いて青よりも短波長の発光を行うことができ、且つ十分
な発光強度を得ることのできる半導体発光素子及びその
製造方法を提供することにある。The present invention has been made in view of such circumstances, and it is an object of the present invention to emit light having a wavelength shorter than that of blue light using an SiC crystal and to obtain a sufficient light emission intensity. It is an object of the present invention to provide a semiconductor light-emitting device capable of obtaining the same and a method for manufacturing the same.
【０００７】[0007]
【課題を解決するための手段】本発明の骨子は、ＳｉＣ
結晶を用いた発光層のバンド構造を直接遷移型にして発
光効率の増大をはかることにある。The gist of the present invention is SiC.
An object of the present invention is to increase the luminous efficiency by making the band structure of a light emitting layer using a crystal a direct transition type.
【０００８】即ち本発明は、六方晶型結晶構造を有する
炭化珪素（ＳｉＣ）からなる基板結晶上に炭化珪素（Ｓ
ｉＣ）を含む超格子構造の発光層を形成した半導体発光
素子において、基板結晶の主面を（１１-2０）又は（１
-1００）の面方位に設定し、且つ発光層の超格子構造を
基板結晶の格子面間隔の偶数倍の周期に設定したことを
特徴としている。なお、結晶方位の負の向きは一般には
インバースで示されるが、本明細書では−記号で示して
いる。That is, according to the present invention, silicon carbide (S ) is deposited on a substrate crystal made of silicon carbide (SiC) having a hexagonal crystal structure.
In a semiconductor light emitting device in which a light emitting layer having a superlattice structure including iC) is formed, the main surface of the substrate crystal is set to (11-20) or (1-20).
−100), and the superlattice structure of the light emitting layer is set to an even multiple of the lattice spacing of the substrate crystal. Although the negative direction of the crystal orientation is generally indicated by inverse, it is indicated by-symbol in this specification.
【０００９】また本発明は、上記半導体発光素子の製造
方法において、六方晶型結晶構造を有する炭化珪素（Ｓ
ｉＣ）からなる第１導電型の基板結晶の主面を（１１-2
０）又は（１-1００）の面方位に切り出したのち、この
基板結晶の主面上に炭化珪素（ＳｉＣ）を含む超格子構
造の第１導電型の発光層を成長形成し、且つこの発光層
の超格子構造を基板結晶の格子面間隔の偶数倍の周期に
設定し、次いでこの発光層上に炭化珪素（ＳｉＣ）を含
む第２導電型の半導体層を成長形成することを特徴とし
ている。The present invention also provides a method for manufacturing a semiconductor light emitting device, comprising the steps of: forming a silicon carbide (S) having a hexagonal crystal structure;
The principal surface of the substrate crystal of the first conductivity type made of iC) is (11-2)
After cutting out in the (0) or (1-100) plane orientation, a first conductivity type light emitting layer having a superlattice structure containing silicon carbide (SiC) is grown and formed on the main surface of the substrate crystal, and this light emission is obtained. The superlattice structure of the layer is set to an even multiple of the lattice spacing of the substrate crystal, and then silicon carbide (SiC) is included on the light emitting layer.
It is characterized by growing a semiconductor layer of the non-second conductivity type.
【００１０】また、本発明の望ましい実施態様として
は、発光層を成長する際に、不純物添加を行う層と行わ
ない層とを交互に成長する、又は異なる材料を積層して
歪超格子構造に形成することを特徴としている。In a preferred embodiment of the present invention, when the light emitting layer is grown, layers to be doped with impurities and layers not to be doped are alternately grown, or different materials are laminated to form a strained superlattice structure. It is characterized by forming.
【００１１】[0011]
【作用】前述のように、通常のＳｉＣ結晶は、図４に示
すように間接遷移型のバンド構造を有する。その伝導帯
の最小はＭ点（１１-2０）又はＫ点（１-1００）に位置
する。ここで、［１１-2０］方向又は［１-1００］方向
に２倍の周期を持つ構造を達成すれば、第１ブリリアン
ゾーンは１／２になる。この結果、Ｍ点又はＫ点にあっ
た伝導帯の底はΓ点に移動する。このため、価電子帯の
頂上と伝導帯の底とは同じ位置になり、直接遷移型に転
位する。As described above, a normal SiC crystal has an indirect transition type band structure as shown in FIG. The minimum of the conduction band is located at the point M (11-20) or the point K (1-100). Here, if a structure having a double period in the [11-20] direction or the [1-100] direction is achieved, the first brilliant zone is halved. As a result, the bottom of the conduction band located at the point M or the point K moves to the point Γ. For this reason, the top of the valence band and the bottom of the conduction band are at the same position, and dislocations are made in a direct transition type.
【００１２】本発明によれば、六方晶型結晶構造を有す
る炭化珪素（ＳｉＣ）からなる基板結晶の面方位を（１
１-2０）又は（１-1００）に規定し、その上に通常の六
方晶型結晶の格子面間隔の偶数倍の周期を持つ超格子構
造の発光層を成長しているので、発光層のバンド構造は
直接遷移型に変化する。これにより、輻射再結合過程が
大きく増大し、発光効率を増大することが可能となる。According to the present invention, the plane orientation of a substrate crystal made of silicon carbide (SiC) having a hexagonal crystal structure is set to (1).
(1-20) or (1-100), on which a superlattice structure light emitting layer having an even multiple of the lattice spacing of a normal hexagonal crystal is grown. The band structure changes directly to a transition type. As a result, the radiation recombination process is greatly increased, and the luminous efficiency can be increased.
【００１３】また、（１１-2０）方向又は（１-1００）
方向の格子定数の偶数倍の間隔で不純物添加を行うこと
により、発光層には結晶格子の２倍の周期性が現れてく
る。このことにより、前述したように発光層を直接遷移
型に容易に転位させることが可能となる。In the (11-20) direction or (1-100)
By doping impurities at even intervals of the lattice constant in the direction, a periodicity twice as large as that of the crystal lattice appears in the light emitting layer. As a result, as described above, the light emitting layer can be easily transposed to a direct transition type.
【００１４】[0014]
【実施例】以下、本発明の詳細を図示の実施例によって
説明する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The details of the present invention will be described below with reference to the illustrated embodiments.
【００１５】図１は本発明の第１の実施例に係わるＳｉ
Ｃ：Ａｌ，Ｎ発光ダイオードの概略構成を示す断面図で
ある。図中１１は（１１-2０）面に切り出した６Ｈ型Ｓ
ｉＣ結晶からなるｎ型基板であり、この基板１１上に基
板結晶の格子面間隔の２倍の周期構造を持つ超格子構造
のｎ型発光層１２が成長形成されている。発光層１２上
には、円形のｐ型層１３が選択的に形成されている。そ
して、ｐ型層１３上にはｐ側電極１４が形成され、ｎ型
基板１１の下にはｎ側電極１５が形成されている。この
発光ダイオードを製造するには、有機金属化学気相成長
法（ＭＯＣＶＤ）を用いて、次のようにして行う。FIG. 1 shows a first embodiment of the present invention.
It is sectional drawing which shows schematic structure of C: Al, N light emitting diode. 11 in the figure is 6H type S cut out to (11-20) plane.
An n-type light emitting layer 12 having a superlattice structure having a periodic structure twice as long as the lattice spacing of the substrate crystal is formed on an n-type substrate made of an iC crystal. On the light emitting layer 12, a circular p-type layer 13 is selectively formed. A p-side electrode 14 is formed on the p-type layer 13, and an n-side electrode 15 is formed below the n-type substrate 11. In order to manufacture this light emitting diode, metal organic chemical vapor deposition (MOCVD) is used as follows.
【００１６】まず、（１１-2０）面に切り出した６Ｈ型
ＳｉＣ結晶基板１１を、ＭＯＣＶＤ装置に入れ高温で表
面処理を行う。次いで、基板温度を成長温度（１５００
℃）まで降下した後、キャリアガスで希釈したシリコン
（Ｓｉ）の原料であるシランと炭素（Ｃ）の原料である
プロパンガスとを交互に導入する。その切替えの途中で
塩化水素ガスを導入し、余分のＳｉ，Ｃを除去する。First, the 6H SiC crystal substrate 11 cut into the (11-20) plane is placed in an MOCVD apparatus and subjected to surface treatment at a high temperature. Next, the substrate temperature was increased to the growth temperature (1500).
° C), silane which is a raw material of silicon (Si) diluted with a carrier gas and propane gas which is a raw material of carbon (C) are alternately introduced. During the switching, hydrogen chloride gas is introduced to remove excess Si and C.
【００１７】このようにすることにより、１原子ずつ成
長を行うことができる。この成長を行うとき、ＳｉＣ層
の１層ごと交互に不純物添加を行う層と行わない層とを
交互に成長させ、超格子構造のｎ型発光層１２を形成す
る。不純物としては、導電型決定には窒素（Ｎ）を、発
光中心として窒素の量を上回らない程度アルミニウム
（Ａｌ）を導入する。By doing so, it is possible to grow one atom at a time. When this growth is performed, a layer in which impurities are added alternately and a layer in which impurities are not added are alternately grown for each layer of the SiC layer, thereby forming an n-type light emitting layer 12 having a super lattice structure. As impurities, nitrogen (N) is introduced for the determination of conductivity type, and aluminum (Al) is introduced as an emission center so as not to exceed the amount of nitrogen.
【００１８】ここで、発光層１２の超格子構造におい
て、その周期は図４に示すバンド構造におけるＭ点とΓ
点との間隔（格子定数）の２倍とする。また、不純物と
してのＡｌ，Ｎの添加量は１０13ｃｍ-2〜１０14ｃｍ-2
の範囲とする。Here, in the superlattice structure of the light emitting layer 12, the period is the same as the point M in the band structure shown in FIG.
It is set to twice the interval (lattice constant) between points. The addition amount of Al and N as impurities is 10 13 cm −2 to 10 14 cm −2.
Range.
【００１９】上記の方法によりｎ型発光層１２を３００
ｎｍ成長した後、この発光層１２上にＡｌを導電型決定
不純物としてｐ型層１３を５００ｎｍ程度成長する。ｐ
型層１３の成長には原料ガス，不純物ガスは同時に流し
た。その後、ｐ型層１３にはｐ側電極としてＴｉとＡｌ
の積層電極１４を付着し、基板１１にはｎ側電極として
Ｎｉ電極１５を付着して、それぞれオーミック電極を形
成した。According to the above method, the n-type light emitting layer 12 is
After the growth, the p-type layer 13 is grown on the light emitting layer 12 to a thickness of about 500 nm using Al as a conductivity type determining impurity. p
In growing the mold layer 13, a source gas and an impurity gas were simultaneously flowed. Thereafter, Ti and Al are formed on the p-type layer 13 as p-side electrodes.
And an Ni electrode 15 as an n-side electrode was attached to the substrate 11 to form ohmic electrodes.
【００２０】このようにして製作した発光ダイオードに
おいては、発光層１２のバンド構造が直接遷移型に転位
することになり、輻射遷移が起こり易く、発光効率を高
めることができる。本発明者らの実験によれば、図２に
示すように、本実施例素子は従来より１桁以上の発光強
度を実現することができた。また、本実施例では、従来
困難であった青や紫色の高光度の発光素子が実現され
る。これにより、赤又は緑色の発光ダイオードと組み合
わせることにより、フルカラーの表示発光素子を製作す
ることが可能となる。In the light emitting diode manufactured as described above, the band structure of the light emitting layer 12 is directly transposed to a transition type, so that the radiation transition easily occurs and the luminous efficiency can be increased. According to the experiments performed by the present inventors, as shown in FIG. 2, the device of the present embodiment was able to achieve an emission intensity of one digit or more than the conventional device. Further, in this embodiment, a blue or purple light-emitting element having a high luminous intensity, which has been conventionally difficult, is realized. This makes it possible to manufacture a full-color display light-emitting element by combining with a red or green light-emitting diode.
【００２１】図３は、本発明の第２の実施例に係わる発
光ダイオードの概略構成を示す断面図である。なお、図
１と同一部分には同一符号を付して、その詳しい説明は
省略する。FIG. 3 is a sectional view showing a schematic structure of a light emitting diode according to a second embodiment of the present invention. The same parts as those in FIG. 1 are denoted by the same reference numerals, and detailed description thereof will be omitted.
【００２２】この実施例は、６Ｈ型のｎ型ＳｉＣ結晶基
板１１上に２Ｈ型のｎ型ＳｉＣバッファ層２１を形成
し、この上に６Ｈ又は４Ｈ型のｎ型発光層２２及び２Ｈ
型のｐ型層２３を成長形成したものである。ここで、バ
ッファ層２１は、ＭＯＣＶＤ法でＳｉＣにＡｌ，Ｎを混
合して成長することにより得られる。また、発光層２２
は通常の成長温度１４５０〜１６００℃で成長し、ｐ型
層２３はこれよりも低い成長温度１２００〜１３００℃
で成長すればよい。In this embodiment, a 2H-type n-type SiC buffer layer 21 is formed on a 6H-type n-type SiC crystal substrate 11, and a 6H or 4H-type n-type light-emitting layer 22 and 2H-type
The p-type layer 23 is formed by growth. Here, the buffer layer 21 is obtained by growing AlC and N by mixing SiC by MOCVD. The light emitting layer 22
Grows at a normal growth temperature of 1450 to 1600 ° C., and the p-type layer 23 grows at a lower growth temperature of 1200 to 1300 ° C.
I just need to grow.
【００２３】このような実施例では、発光層２２が６Ｈ
型又は４Ｈ型で基板２１及びｐ型層２３が２Ｈ型である
ことから、発光層２２のバンドギャップが基板２１及び
ｐ型層２３よりも十分に小さくなり、発光強度をより高
めることができる。これは、２Ｈ型の方が６Ｈ型よりも
バンドギャップが大きくなるからである。In such an embodiment, the light-emitting layer 22 is 6H
Since the substrate 21 and the p-type layer 23 are of the mold or 4H type and the substrate 21 and the p-type layer 23 are of the 2H type, the band gap of the light emitting layer 22 is sufficiently smaller than that of the substrate 21 and the p-type layer 23, and the emission intensity can be further increased. This is because the band gap of the 2H type is larger than that of the 6H type.
【００２４】なお、本発明は上述した実施例に限定され
るものではない。実施例ではＳｉＣ基板の面方位を（１
１-2０）としたが、この代わりに（１-1００）の面方位
を選択してもよい。さらに、実施例では発光層の超格子
構造を基板結晶の格子面間隔の２倍の周期としたが、偶
数倍の周期であれば同様の効果が得られる。また、発光
層に添加する不純物としては、III ，Ｖ族元素以外にＧ
ｅ，Ｓｎ等のIV族元素も使用することができる。さら
に、結晶型は６Ｈ以外に４Ｈ型，２Ｈ型，１５Ｒ型等の
他の六方晶の結晶型のものが使用可能である。The present invention is not limited to the above embodiment. In the embodiment, the plane orientation of the SiC substrate is set to (1).
(1-20), but the plane orientation of (1-100) may be selected instead. Further, in the embodiment, the superlattice structure of the light emitting layer has a period twice as long as the lattice spacing of the substrate crystal. However, the same effect can be obtained if the period is an even number times. In addition, as impurities to be added to the light emitting layer, G
Group IV elements such as e and Sn can also be used. Further, as the crystal type, other hexagonal crystal types such as 4H type, 2H type, and 15R type other than 6H can be used.
【００２５】また、超格子構造の発光層としては、Ｓｉ
ＣとＡｌＮ又はＧａＮの歪超格子構造を（１１-2０）又
は（１-1００）面上に成長形成してもよい。さらに、発
光層の成長方法は、ＭＯＣＶＤ法以外に分子線エピタキ
シャル法などの他の気相成長法を使用することができ
る。その他、本発明の要旨を逸脱しない範囲で、種々変
形して実施することができる。The light emitting layer having a super lattice structure is made of Si
A strained superlattice structure of C and AlN or GaN may be grown and grown on the (11-20) or (1-100) plane. Further, as a method of growing the light emitting layer, other vapor phase growth methods such as a molecular beam epitaxial method can be used other than the MOCVD method. In addition, various modifications can be made without departing from the scope of the present invention.
【００２６】[0026]
【発明の効果】以上詳述したように本発明によれば、六
方晶型結晶構造のＳｉＣ結晶基板の面方位を（１１-2
０）又は（１-1００）に規定し、発光層を基板結晶の格
子面間隔の偶数倍の周期構造としているので、発光層の
バンド構造を直接遷移型にすることができ、ＳｉＣを用
いて高光度で青より短波長の発光ができる半導体発光素
子を実現することが可能となる。As described in detail above, according to the present invention, the plane orientation of the SiC crystal substrate having a hexagonal crystal structure is changed to (11-2).
0) or (1-100), and the light emitting layer has a periodic structure that is an even multiple of the lattice spacing of the substrate crystal, so that the band structure of the light emitting layer can be made to be a direct transition type. It is possible to realize a semiconductor light emitting device that can emit light with a higher luminous intensity and a shorter wavelength than blue.
【図１】本発明の第１の実施例に係わる発光ダイオード
の概略構成を示す断面図。FIG. 1 is a sectional view showing a schematic configuration of a light emitting diode according to a first embodiment of the present invention.
【図２】実施例と従来例との発光特性の違いを示す特性
図。FIG. 2 is a characteristic diagram showing a difference in light emission characteristics between an example and a conventional example.
【図３】本発明の第２の実施例に係わる発光ダイオード
の概略構成を示す断面図。FIG. 3 is a sectional view showing a schematic configuration of a light emitting diode according to a second embodiment of the present invention.
【図４】従来素子のバンド構造を示す図。FIG. 4 is a diagram showing a band structure of a conventional element.
１１…ｎ型ＳｉＣ基板、 １２…ｎ型発光層、（６Ｈ型ＳｉＣ） １３…ｐ型層（６Ｈ型ＳｉＣ）、 １４…ｐ側電極、 １５…ｎ側電極、 ２１…ｎ型バッファ層（２Ｈ型ＳｉＣ）、 ２２…ｎ型発光層（６Ｈ又は４Ｈ型ＳｉＣ）、 ２３…ｐ型層（２Ｈ型ＳｉＣ）。 11 n-type SiC substrate, 12 n-type light emitting layer, (6H-type SiC) 13 p-type layer (6H-type SiC), 14 p-side electrode, 15 n-side electrode, 21 n-type buffer layer (2H 22 ... n-type light-emitting layer (6H or 4H-type SiC); 23 ... p-type layer (2H-type SiC).
フロントページの続き (56)参考文献 特開 昭61−78189（ＪＰ，Ａ) 特開 昭63−207186（ＪＰ，Ａ) 特開 昭59−197187（ＪＰ，Ａ) 特開 昭61−145886（ＪＰ，Ａ) 特開 平４−137771（ＪＰ，Ａ) (58)調査した分野(Int.Cl.7，ＤＢ名) H01L 33/00 Continuation of the front page (56) References JP-A-61-78189 (JP, A) JP-A-63-207186 (JP, A) JP-A-59-197187 (JP, A) JP-A-61-145886 (JP, A) , A) JP-A-4-137777 (JP, A) (58) Fields investigated (Int. Cl. 7 , DB name) H01L 33/00
Claims (3)
Ｃ）からなる基板結晶と、この基板結晶上に形成された
炭化珪素（ＳｉＣ）を含む超格子構造の発光層とを具備
し、 前記基板結晶の主面を（１１-2０）又は（１-1００）の
面方位に設定し、且つ前記発光層の超格子構造を前記基
板結晶の格子面間隔の偶数倍の周期に設定してなること
を特徴とする半導体発光素子。A silicon carbide (Si) having a hexagonal crystal structure
C) and a substrate crystal formed on the substrate crystal.
A light emitting layer having a superlattice structure containing silicon carbide (SiC) , wherein a principal plane of the substrate crystal is set to a plane orientation of (11-20) or (1-100), and a superlattice of the light emitting layer is provided. A semiconductor light emitting device having a structure whose period is set to an even multiple of the lattice spacing of the substrate crystal.
Ｃ）からなる第１導電型の基板結晶の主面を（１１-2
０）又は（１-1００）の面方位に切り出す工程と、前記
基板結晶の主面上に炭化珪素（ＳｉＣ）を含む超格子構
造の第１導電型の発光層を成長形成し、且つこの発光層
の超格子構造を前記基板結晶の格子面間隔の偶数倍の周
期に設定する工程と、前記発光層上に炭化珪素（Ｓｉ
Ｃ）を含む第２導電型の半導体層を成長形成する工程と
を含むことを特徴とする半導体発光素子の製造方法。2. A silicon carbide (Si) having a hexagonal crystal structure.
C), the main surface of the first conductivity type substrate crystal made of (11-2)
0) or (1-100) plane orientation, growing a first conductivity type light emitting layer having a superlattice structure containing silicon carbide (SiC) on the main surface of the substrate crystal, and emitting the light. Setting the superlattice structure of the layer to an even multiple of the lattice spacing of the substrate crystal; and forming silicon carbide (Si) on the light emitting layer.
Growing a second conductivity type semiconductor layer including C) .
純物を添加した層と添加しない層とを交互に積層するこ
とを特徴とする請求項２記載の半導体発光素子の製造方
法。3. The method according to claim 2, wherein the step of growing and forming the light emitting layer comprises alternately stacking layers doped with impurities and layers not doped with impurities.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2115991A JP3267983B2 (en) | 1991-02-14 | 1991-02-14 | Semiconductor light emitting device and method of manufacturing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2115991A JP3267983B2 (en) | 1991-02-14 | 1991-02-14 | Semiconductor light emitting device and method of manufacturing the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH057016A JPH057016A (en) | 1993-01-14 |
| JP3267983B2 true JP3267983B2 (en) | 2002-03-25 |
Family
ID=12047136
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2115991A Expired - Fee Related JP3267983B2 (en) | 1991-02-14 | 1991-02-14 | Semiconductor light emitting device and method of manufacturing the same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3267983B2 (en) |
Families Citing this family (20)
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| JP2848515B2 (en) * | 1994-03-31 | 1999-01-20 | 矢崎総業株式会社 | Seed analogue making device |
| US6377596B1 (en) | 1995-09-18 | 2002-04-23 | Hitachi, Ltd. | Semiconductor materials, methods for fabricating semiconductor materials, and semiconductor devices |
| JPH0998605A (en) * | 1995-10-03 | 1997-04-15 | Yazaki Corp | Artificial seed producing machine |
| US6608327B1 (en) | 1998-02-27 | 2003-08-19 | North Carolina State University | Gallium nitride semiconductor structure including laterally offset patterned layers |
| US6051849A (en) | 1998-02-27 | 2000-04-18 | North Carolina State University | Gallium nitride semiconductor structures including a lateral gallium nitride layer that extends from an underlying gallium nitride layer |
| US6384428B1 (en) * | 1998-03-19 | 2002-05-07 | Hitachi, Ltd. | Silicon carbide semiconductor switching device |
| US6265289B1 (en) | 1998-06-10 | 2001-07-24 | North Carolina State University | Methods of fabricating gallium nitride semiconductor layers by lateral growth from sidewalls into trenches, and gallium nitride semiconductor structures fabricated thereby |
| US6177688B1 (en) | 1998-11-24 | 2001-01-23 | North Carolina State University | Pendeoepitaxial gallium nitride semiconductor layers on silcon carbide substrates |
| US6255198B1 (en) | 1998-11-24 | 2001-07-03 | North Carolina State University | Methods of fabricating gallium nitride microelectronic layers on silicon layers and gallium nitride microelectronic structures formed thereby |
| JP4185215B2 (en) * | 1999-05-07 | 2008-11-26 | 弘之 松波 | SiC wafer, SiC semiconductor device, and method of manufacturing SiC wafer |
| US6521514B1 (en) | 1999-11-17 | 2003-02-18 | North Carolina State University | Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substrates |
| US6380108B1 (en) | 1999-12-21 | 2002-04-30 | North Carolina State University | Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on weak posts, and gallium nitride semiconductor structures fabricated thereby |
| US6403451B1 (en) | 2000-02-09 | 2002-06-11 | Noerh Carolina State University | Methods of fabricating gallium nitride semiconductor layers on substrates including non-gallium nitride posts |
| US6261929B1 (en) | 2000-02-24 | 2001-07-17 | North Carolina State University | Methods of forming a plurality of semiconductor layers using spaced trench arrays |
| EP1306890A2 (en) * | 2001-10-25 | 2003-05-02 | Matsushita Electric Industrial Co., Ltd. | Semiconductor substrate and device comprising SiC and method for fabricating the same |
| WO2008001786A1 (en) * | 2006-06-27 | 2008-01-03 | Osaka University | METHOD FOR PRODUCING SILICON CARBIDE (SiC) CRYSTAL AND SILICON CARBIDE (SiC) CRYSTAL OBTAINED BY THE SAME |
| JP5777437B2 (en) * | 2011-07-27 | 2015-09-09 | 京セラ株式会社 | Single crystal substrate and semiconductor device using the same |
| JP5911132B2 (en) * | 2012-02-27 | 2016-04-27 | 株式会社ナノマテリアル研究所 | Semiconductor device |
| WO2015129876A1 (en) * | 2014-02-27 | 2015-09-03 | 京セラ株式会社 | Silicon carbide crystal ingot, silicon carbide wafer, and method for manufacturing silicon carbide crystal ingot and silicon carbide wafer |
-
1991
- 1991-02-14 JP JP2115991A patent/JP3267983B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH057016A (en) | 1993-01-14 |
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