JP3253265B2 - Chip type light emitting device - Google Patents

Chip type light emitting device

Info

Publication number
JP3253265B2
JP3253265B2 JP27103697A JP27103697A JP3253265B2 JP 3253265 B2 JP3253265 B2 JP 3253265B2 JP 27103697 A JP27103697 A JP 27103697A JP 27103697 A JP27103697 A JP 27103697A JP 3253265 B2 JP3253265 B2 JP 3253265B2
Authority
JP
Japan
Prior art keywords
chip
light emitting
light
led chip
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP27103697A
Other languages
Japanese (ja)
Other versions
JPH11112025A (en
Inventor
慎二 磯川
秀和 戸田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm Co Ltd
Original Assignee
Rohm Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co Ltd filed Critical Rohm Co Ltd
Priority to JP27103697A priority Critical patent/JP3253265B2/en
Priority to US09/165,284 priority patent/US6121637A/en
Priority to DE1998145477 priority patent/DE19845477A1/en
Priority to DE19861398A priority patent/DE19861398B4/en
Publication of JPH11112025A publication Critical patent/JPH11112025A/en
Application granted granted Critical
Publication of JP3253265B2 publication Critical patent/JP3253265B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H01L33/486—Containers adapted for surface mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/32257—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic the layer connector connecting to a bonding area disposed in a recess of the surface of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)
  • Led Devices (AREA)

Abstract

A light emitting semiconductor device has a light emitting chip (3) mounted by a white bonding material (9) on the white surface of an insulating substrate (10). A light emitting semiconductor device has: (a) an insulating substrate (10) with a white surface between connection electrodes (1, 2) at its two ends; (b) a light emitting chip (3) mounted by a bonding material (9) on the substrate surface and having p-side and n-side electrodes (38, 39) electrically connected to respective connection electrodes (1, 2); and (c) a housing for covering the chip (3) and its surroundings. An Independent claim is also included for a light emitting semiconductor device having: (i) a light emitting chip mounted by a white bonding material onto two conductive elements; (ii) contacts for connecting two electrodes of the chip to respective conductive elements; and (iii) a resin housing for covering the chip and its surroundings.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【０００１】[0001]

【発明の属する技術分野】本発明は基板の表面に発光素
子チップが設けられる小形のチップ型発光素子に関す
る。さらに詳しくは、光度を向上させることができるチ
ップ型発光素子に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a small chip type light emitting device in which a light emitting device chip is provided on a surface of a substrate. More specifically, the present invention relates to a chip-type light emitting device capable of improving luminous intensity.

【０００２】[0002]

【従来の技術】携帯電話機やＰＨＳなどの携帯機器の小
形化に伴い、それらに用いられる発光素子なども軽薄短
小化が要求され、小形で薄型のチップ型発光素子が用い
られている。2. Description of the Related Art With the miniaturization of portable devices such as portable telephones and PHSs, light-emitting devices and the like used for these devices are required to be light and thin, and small and thin chip-type light-emitting devices are used.

【０００３】この種の小形で薄型のチップ型発光素子は
図３（ａ）に示されるように、基板１０の両端部に端子
電極１、２が形成され、一方の端子電極１と接続され端
子電極の一部となる電極上に発光素子（以下、ＬＥＤと
いう）チップ３がボンディングされてその下部電極が端
子電極１と直接接続され、その上部電極が金線４により
他方の端子電極２とワイヤボンディングされて、それぞ
れ電気的に接続されている。基板１０としては、たとえ
ばガラスクロスに耐熱性のＢＴ樹脂を含浸させたＢＴレ
ジンなどの絶縁性基板が用いられている。また、ＬＥＤ
チップ３は、たとえば図３（ｂ）に示されるように、Ｇ
ａＡｓやＧａＰなどからなるｎ型半導体層４１とｐ型半
導体層４２との接合によるｐｎ接合面（発光層）４３が
形成され、その両面に電極４４、４５が設けられること
により構成されている。この基板１０の表面側には、透
明または乳白色のエポキシ樹脂などからなる樹脂により
ＬＥＤチップ３や金線４を被覆して保護するパッケージ
６が形成されている。As shown in FIG. 3A, a small and thin chip type light emitting element of this kind has terminal electrodes 1 and 2 formed at both ends of a substrate 10 and is connected to one terminal electrode 1 to be connected to a terminal. A light emitting element (hereinafter, referred to as an LED) chip 3 is bonded on an electrode which is a part of the electrode, and its lower electrode is directly connected to the terminal electrode 1, and its upper electrode is connected to the other terminal electrode 2 by a gold wire 4 and a wire. They are bonded and electrically connected to each other. As the substrate 10, for example, an insulating substrate such as a BT resin in which a glass cloth is impregnated with a heat-resistant BT resin is used. In addition, LED
The chip 3 is, for example, as shown in FIG.
A pn junction surface (light emitting layer) 43 is formed by joining an n-type semiconductor layer 41 made of aAs, GaP or the like and a p-type semiconductor layer 42, and electrodes 44 and 45 are provided on both surfaces thereof. A package 6 that covers and protects the LED chip 3 and the gold wire 4 with a resin made of a transparent or milky epoxy resin or the like is formed on the front side of the substrate 10.

【０００４】[0004]

【発明が解決しようとする課題】前述のように電子機器
の軽薄短小化に伴い、チップ型発光素子についてもさら
なる小形化が要求され、ＬＥＤチップもできるだけ小さ
くすることが要求されている。一方において、光度の大
きい高性能のものが要求されている。従来のチップ型発
光素子は、前述のように端子電極の一方の表面にマウン
トされてワイヤボンディングがなされることにより製造
されている。この端子電極は銅パターンの上に金メッキ
が施されているため、ＬＥＤチップ３の基板裏面側に進
んだ光を吸収しやすい。とくに青色系のＬＥＤチップで
はその基板にサファイア基板が用いられ、裏面側にも殆
ど減衰することなく進むが、青色系の光はとくに黄色
（金色）に吸収されやすく裏面側に進んだ光は吸収され
やすい。そのため、青色系のＬＥＤチップの発光する光
を充分に利用できていないという問題がある。As described above, as electronic devices become lighter and thinner, the chip-type light-emitting element is required to be further downsized, and the LED chip is required to be as small as possible. On the other hand, a high-performance device having a large luminous intensity is required. A conventional chip-type light emitting device is manufactured by being mounted on one surface of a terminal electrode and performing wire bonding as described above. Since this terminal electrode is plated with gold on the copper pattern, it easily absorbs light that has proceeded to the back surface side of the substrate of the LED chip 3. Sapphire substrates are used for blue LED chips in particular, and the light goes to the back side with little attenuation, but blue light is particularly absorbed in yellow (gold) and light that goes to the back side is absorbed. Easy to be. Therefore, there is a problem that the light emitted from the blue LED chip cannot be sufficiently utilized.

【０００５】本発明はこのような問題を解決するために
なされたもので、ＬＥＤチップで発光した光をできるだ
け利用することにより、小形で非常に薄型でありなが
ら、光度の大きいチップ型発光素子を提供することを目
的とする。The present invention has been made in order to solve such a problem. By utilizing light emitted from an LED chip as much as possible, a chip type light emitting device which is small, very thin, and has a large luminous intensity is provided. The purpose is to provide.

【０００６】[0006]

【課題を解決するための手段】本発明によるチップ型発
光素子は、絶縁性基板と、該絶縁性基板の表面の両端部
に設けられる第１および第２の端子電極と、少なくとも
前記第１および第２の端子電極の間の前記絶縁性基板の
表面が白色系に形成され、該白色系の基板表面上に、発
光する光に対して透明なボンディング剤により裏面全面
が接着されると共にｐ側電極およびｎ側電極がそれぞれ
前記第１および第２の端子電極と電気的に接続される発
光素子チップと、前記発光素子チップの周辺を被覆する
パッケージとからなり、前記絶縁性基板がチッ化アルミ
ナからなっている。ここに白色系とは白色を基本としな
がら、たとえばクリーム色など若干他の色が混色するも
のも含む意味である。A chip type light emitting device according to the present invention comprises an insulating substrate, first and second terminal electrodes provided at both ends of the surface of the insulating substrate, and at least the first and second terminal electrodes. The surface of the insulating substrate between the second terminal electrodes is formed white, and the entire back surface is adhered to the surface of the white substrate by a bonding agent transparent to emitted light, and the p-side. An electrode and an n-side electrode each comprising a light emitting element chip electrically connected to the first and second terminal electrodes, and a package covering the periphery of the light emitting element chip , wherein the insulating substrate is made of aluminum nitride.
It consists of na . Here, the term “white” means that the color is basically white, but includes a color mixed with a slightly different color such as cream.

【０００７】この構造にすることにより、ＬＥＤチップ
が直接白色系の絶縁性基板表面上にマウントされている
ため、電極の材料に制約されることなく、基板の反射率
が大きく同じ発光量のＬＥＤチップから大きな光度の光
を取り出すことができる。前記ＬＥＤチップがチッ化ガ
リウム系化合物半導体からなるＬＥＤチップであれば、
とくにＬＥＤチップの基板が発光する光を殆ど吸収しな
い透明なサファイア基板からなるため、基板の裏面側に
進んだ光を有効に利用することができてとくに効果が大
きい。さらに、青色系のＬＥＤチップは、両電極がＬＥ
Ｄチップの表面側から取り出されるため、端子電極上に
マウントする必要は全然なく好都合である。ここにチッ
化ガリウム系化合物半導体とは、III 族元素のＧａとＶ
族元素のＮとの化合物またはIII 族元素のＧａの一部が
Ａｌ、Ｉｎなどの他のIII 族元素と置換したものおよび
／またはＶ族元素のＮの一部がＰ、Ａｓなどの他のＶ族
元素と置換した化合物からなる半導体をいう。With this structure, since the LED chip is directly mounted on the surface of the white insulating substrate, the reflectance of the substrate is large and the LED having the same light emission amount is not restricted by the material of the electrode. High intensity light can be extracted from the chip. If the LED chip is an LED chip made of a gallium nitride compound semiconductor,
In particular, since the substrate of the LED chip is made of a transparent sapphire substrate that hardly absorbs emitted light, the light that has proceeded to the rear surface side of the substrate can be effectively used, and the effect is particularly large. Furthermore, the blue LED chip has both electrodes LE
Since it is taken out from the front side of the D chip, there is no need to mount it on the terminal electrode, which is convenient. Here, the gallium nitride-based compound semiconductor refers to a group III element Ga and V
A compound of Group III element with N or a part of Ga of Group III element substituted with another Group III element such as Al and In and / or a part of Group V element N with other P such as P and As. A semiconductor made of a compound substituted with a group V element.

【０００８】とくに、前記絶縁性基板がチッ化アルミナ
であることにより、耐熱性に優れ、変色しないため、長
時間の使用に対しても温度上昇に対する変色が生じなく
て高い反射率を維持することができ、輝度の低下を招く
こともない。In particular, the insulating substrate is made of alumina nitride.
By it, excellent heat resistance, because it does not discolor, Ki out to maintain a high reflectance not occur discoloration with respect to a temperature rise even for prolonged use, nor lowering the luminance.

【０００９】[0009]

【発明の実施の形態】つぎに、図面を参照しながら本発
明のチップ型発光素子について説明をする。Next, a chip type light emitting device of the present invention will be described with reference to the drawings.

【００１０】本発明のチップ型発光素子は、その一実施
形態の斜視図が図１に示されるように、絶縁性基板１０
の表面の両端部に第１および第２の端子電極１、２が設
けられている。そして、第１および第２の端子電極１、
２の間の絶縁性基板１０の表面に直接ＬＥＤチップ３が
ボンディングされている。ＬＥＤチップ３のｎ側電極３
９は第１の端子電極１と、ｐ側電極３８は第２の端子電
極２と、それぞれ金線４により接続されている。FIG. 1 is a perspective view of one embodiment of a chip type light emitting device according to the present invention.
The first and second terminal electrodes 1 and 2 are provided at both ends of the surface of the. Then, the first and second terminal electrodes 1,
The LED chip 3 is directly bonded to the surface of the insulating substrate 10 between the two. N-side electrode 3 of LED chip 3
Reference numeral 9 denotes the first terminal electrode 1 and the p-side electrode 38 is connected to the second terminal electrode 2 by the gold wire 4.

【００１１】絶縁性基板１０は、たとえばアルミナ、チ
ッ化アルミナなどのセラミックスからなる絶縁性の基板
であり、小形化が要求されるこの種のチップ型発光素子
では、その大きさが０.８ｍｍ×１.６ｍｍ程度で、その
厚さが０.１〜０.２ｍｍ程度である。この絶縁性基板１
０は、とくに白色系であることが青色などＬＥＤチップ
で発光する色の光を吸収しないで反射させることができ
るため好ましい。青色系のＬＥＤチップは後述するよう
に基板がサファイアからなり透明であるため、白色系の
絶縁性基板が用いられることにより、ＬＥＤチップの基
板の裏面側に進んだ光を有効に取り出すことができ、と
くに効果が大きい。この基板の色は完全な白色であるこ
とが反射率が最も大きくて好ましいが、クリーム色など
多少他の色が混色していても、白色を基本とする白色系
であれば高い反射率が得られ効果がある。また、基板の
全面が白色系でなくても、少なくともＬＥＤチップがマ
ウントされる部分が白色系であればよい。また、この絶
縁性基板１０は、セラミックスのように、７００℃程度
までの耐熱性を有することが使用による温度上昇に対し
ても変色せず、いつまでも白色を維持することができる
ため好ましい。The insulating substrate 10 is an insulating substrate made of, for example, ceramics such as alumina and alumina nitride. In this type of chip-type light emitting device which requires miniaturization, the size is 0.8 mm ×. The thickness is about 1.6 mm and the thickness is about 0.1 to 0.2 mm. This insulating substrate 1
0 is particularly preferable because it can reflect light of a color such as blue, which is emitted by the LED chip, without absorbing it. Since the blue LED chip has a transparent substrate made of sapphire, as described later, the use of a white insulating substrate makes it possible to effectively extract the light that has progressed to the back side of the LED chip substrate. Especially effective. It is preferable that the color of this substrate is completely white because the reflectance is the largest, but even if some other color such as cream is mixed, a high reflectance can be obtained with a white color based on white. Has an effect. Further, even if the entire surface of the substrate is not white, at least the portion where the LED chip is mounted may be white. Further, it is preferable that the insulating substrate 10 has heat resistance up to about 700 ° C., like ceramics, because it does not change its color even when the temperature rises due to use and can maintain white forever.

【００１２】この絶縁性基板１０は、さらに熱伝導率が
大きいものが好ましい。すなわち、ＬＥＤチップ３は動
作によりある程度発熱する。その発熱する熱を逃がさな
いとＬＥＤチップ３の温度が上昇して半導体層が劣化し
やすくなる。従来は端子電極上にダイボンディングされ
ているため、ＬＥＤチップの基板側に逃げた熱は比較的
端子電極の金属を介して逃げやすい。しかし、本発明で
は絶縁性基板１０上に直接ボンディングされているた
め、ＬＥＤチップの基板側に逃げた熱を効率よく逃がす
ために熱伝導の大きい材料であることが好ましい。この
ような熱伝導率の大きい絶縁性基板としては、前述のセ
ラミックスがとくに好ましい。The insulating substrate 10 preferably has a higher thermal conductivity. That is, the LED chip 3 generates heat to some extent by operation. Unless the generated heat is released, the temperature of the LED chip 3 rises and the semiconductor layer is easily deteriorated. Conventionally, since the terminal electrode is die-bonded, the heat escaping to the substrate side of the LED chip is relatively easy to escape via the metal of the terminal electrode. However, in the present invention, since it is directly bonded on the insulating substrate 10, it is preferable that the material has high heat conduction in order to efficiently release the heat that has escaped to the substrate side of the LED chip. As the insulating substrate having such a high thermal conductivity, the above-mentioned ceramics is particularly preferable.

【００１３】以上のような要件を満たす材料としては、
前述のようにセラミックスが好ましく、セラミックスの
中でもとくに、チッ化アルミナがアルミナより耐熱性が
高いため好ましい。Materials satisfying the above requirements include:
As described above, ceramics are preferable, and among these ceramics, alumina nitride is particularly preferable because it has higher heat resistance than alumina.

【００１４】ＬＥＤチップ３は、たとえば青色系（紫外
線から黄色）の発光色を有するチップの一例の断面説明
図が図２に示されるように形成される。すなわち、たと
えばサファイア（Ａｌ2 Ｏ3 単結晶）などからなる基板
３１の表面に、ＧａＮからなる低温バッファ層３２が
０.０１〜０.２μｍ程度、クラッド層となるｎ形層３３
が１〜５μｍ程度、ＩｎＧａＮ系（ＩｎとＧａの比率が
種々変わり得ることを意味する、以下同じ）化合物半導
体からなる活性層３４が０.０５〜０.３μｍ程度、ｐ形
のＡｌＧａＮ系（ＡｌとＧａの比率が種々変わり得るこ
とを意味する、以下同じ）化合物半導体層３５ａおよび
ＧａＮ層３５ｂからなるｐ形層（クラッド層）３５が
０.２〜１μｍ程度、それぞれ順次積層されて、その表
面に電流拡散層３７を介してｐ側電極３８が形成されて
いる。また、積層された半導体層３３〜３５の一部が除
去されて露出したｎ形層３３にｎ側電極３９が設けられ
ることにより形成されている。The LED chip 3 is formed, for example, as shown in FIG. 2 as a sectional explanatory view of an example of a chip having a blue (from ultraviolet to yellow) emission color. That is, a low-temperature buffer layer 32 made of GaN is formed on a surface of a substrate 31 made of, for example, sapphire (Al 2 O 3 single crystal) in a thickness of about 0.01 to 0.2 μm and an n-type layer 33 to be a clad layer.
Is about 1 to 5 μm, the active layer 34 made of an InGaN-based (which means that the ratio of In to Ga can be varied, the same applies hereinafter) compound semiconductor is about 0.05 to 0.3 μm, and the p-type AlGaN-based (Al (Which means that the ratio of Ga and Ga can be variously changed, the same shall apply hereinafter). A p-type layer (cladding layer) 35 composed of a compound semiconductor layer 35a and a GaN layer 35b is sequentially stacked on the order of 0.2 to 1 μm, and the surface thereof is formed. A p-side electrode 38 is formed via a current diffusion layer 37. The n-side electrode 39 is provided on the n-type layer 33 exposed by removing a part of the stacked semiconductor layers 33 to 35.

【００１５】このＬＥＤチップ３が図１に示されるよう
に、絶縁性基板１０の中央部で、第１の端子電極１と第
２の端子電極２との間の絶縁性基板１０の表面にエポキ
シ樹脂などのボンディング剤（図示せず）によりマウン
トされる。このボンディング剤はＬＥＤチップ３の基板
の裏面に進んだ光を吸収しない透明な材料であることが
好ましく、たとえば透明なエポキシ樹脂などが用いられ
る。その後、ＬＥＤチップ３のｎ側電極３９およびｐ側
電極３８が第１の端子電極１および第２の端子電極２と
それぞれ電気的に接続されるように、金線４によりワイ
ヤボンディングをする。そして、ＬＥＤチップ３を含め
たこれらの周囲がＬＥＤチップ３により発光する光を透
過する透明または乳白色のエポキシ樹脂などによりモー
ルドすることにより、パッケージ６で被覆された本発明
のチップ型発光素子が得られる。As shown in FIG. 1, the LED chip 3 is provided on the surface of the insulating substrate 10 between the first terminal electrode 1 and the second terminal electrode 2 at the center of the insulating substrate 10 by epoxy. It is mounted by a bonding agent (not shown) such as resin. This bonding agent is preferably a transparent material that does not absorb the light that has proceeded to the back surface of the substrate of the LED chip 3, and for example, a transparent epoxy resin or the like is used. Thereafter, wire bonding is performed by the gold wire 4 so that the n-side electrode 39 and the p-side electrode 38 of the LED chip 3 are electrically connected to the first terminal electrode 1 and the second terminal electrode 2 respectively. Then, the chip-type light-emitting element of the present invention covered with the package 6 is obtained by molding the periphery including the LED chip 3 with a transparent or milky-colored epoxy resin that transmits light emitted by the LED chip 3. Can be

【００１６】本発明によれば、ＬＥＤチップが直接絶縁
性基板にマウントされているため、ＬＥＤチップの基板
の裏面側に進んだ光が絶縁性基板で反射して表面側に放
射される。その結果、従来ＬＥＤチップの基板側に進ん
だ光が端子電極により吸収されていたものが、表面側に
反射されて有効に利用される。その結果、外部に取り出
す光の割合である外部発光効率が向上し、同じＬＥＤチ
ップを使用しながら光度を向上させることができる。ま
た、絶縁性基板に白色系のものを使用することにより、
反射率が大きくなるため、その反射による利用度を高め
ることができ、一層光度を向上させることができる。さ
らに、絶縁性基板に耐熱性のものを使用することによ
り、途中で変色して光度が低下することがなく信頼性が
向上すると共に、熱伝導率の大きい材料を使用すること
により、ＬＥＤチップで発生する熱を効率よく放散させ
ることができるため、ＬＥＤチップの信頼性が向上す
る。According to the present invention, since the LED chip is directly mounted on the insulating substrate, the light traveling toward the back surface of the LED chip substrate is reflected by the insulating substrate and emitted to the front surface. As a result, the light that has conventionally been transmitted to the substrate side of the LED chip has been absorbed by the terminal electrode, but is reflected on the surface side and is effectively used. As a result, external luminous efficiency, which is the proportion of light extracted outside, is improved, and luminous intensity can be improved while using the same LED chip. Also, by using a white material for the insulating substrate,
Since the reflectance increases, the degree of utilization by the reflection can be increased, and the luminous intensity can be further improved. Furthermore, by using a heat resistant material for the insulating substrate, it is possible to improve the reliability without discoloration and decrease in luminous intensity on the way, and to use a material having a large thermal conductivity to make the LED chip Since the generated heat can be efficiently dissipated, the reliability of the LED chip is improved.

【００１７】前述の例では、発光素子としてチッ化ガリ
ウム系化合物半導体を用いた青色系の半導体発光素子で
あったが、チッ化ガリウム系化合物半導体を用いた青色
系のＬＥＤチップはとくに端子電極の黄色系に吸収され
やすいと共に、ＬＥＤチップの基板が透明で光を吸収し
ないため効果が大きく、また、ＬＥＤチップの基板が絶
縁性基板であるためｎ側およびｐ側電極が共に表面側に
設けられるため都合がよい。しかし、ＧａＡｓ系、Ａｌ
ＧａＡｓ系、ＡｌＧａＩｎＰ系、ＩｎＰ系などの赤色系
や緑色系の発光素子についても、ＬＥＤチップの基板に
発光する光を吸収しにくい材料を使用すると共に、上面
から両方の電極を取り出したり、絶縁性基板表面の一部
のみに電極配線を設けておき、ＬＥＤチップの裏面側の
電極と接続するようにすることにより、ＬＥＤチップの
基板の裏面側に進んだ光を有効に利用することができ
る。In the above-described example, a blue-based semiconductor light-emitting device using a gallium nitride-based compound semiconductor as a light-emitting device was used. In addition to being easily absorbed in a yellowish color, the LED chip substrate is transparent and does not absorb light, so the effect is great. In addition, since the LED chip substrate is an insulating substrate, both the n-side and p-side electrodes are provided on the front side. Therefore it is convenient. However, GaAs, Al
For red and green light emitting elements such as GaAs, AlGaInP, and InP, materials that do not easily absorb the light emitted from the LED chip substrate are used. By providing electrode wiring only on a part of the surface of the substrate and connecting it to the electrode on the back surface of the LED chip, it is possible to effectively use light that has proceeded to the back surface of the substrate of the LED chip.

【００１８】さらに、前述の例では、ＬＥＤチップ３の
周囲が透明な樹脂製のパッケージ６のみで被覆されてい
たが、さらにその外周に反射ケースを備えるタイプであ
っても同様である。Furthermore, in the above-mentioned example, the periphery of the LED chip 3 is covered only with the transparent resin package 6, but the same applies to the type further provided with a reflection case on the outer periphery.

【００１９】[0019]

【発明の効果】本発明によれば、ＬＥＤチップの裏面側
に進む光を有効に利用することができるため、同じＬＥ
Ｄチップの発光に対して光度を向上させることができ
る。そのため、とくに発光効率が低く黄色系の材料に吸
収されやすい青色のチップ型発光素子の光度を効率よく
向上させることができる。According to the present invention, the light traveling toward the rear surface side of the LED chip can be effectively used, so that the same LE
Luminous intensity can be improved with respect to light emission of the D chip. Therefore, the luminous intensity of the blue chip-type light-emitting element, which has low luminous efficiency and is easily absorbed by the yellow-based material, can be efficiently improved.

【図面の簡単な説明】[Brief description of the drawings]

【図１】本発明の半導体発光素子の一実施形態の斜視説
明図である。FIG. 1 is a perspective explanatory view of one embodiment of a semiconductor light emitting device of the present invention.

【図２】図１のＬＥＤチップの一例の断面説明図であ
る。FIG. 2 is an explanatory sectional view of an example of the LED chip of FIG. 1;

【図３】従来のチップ型発光素子の一例の斜視説明図で
ある。FIG. 3 is an explanatory perspective view of an example of a conventional chip type light emitting element.

【符号の説明】[Explanation of symbols]

１ 第１の端子電極 ２ 第２の端子電極 ３ ＬＥＤチップ １０ 絶縁性基板 DESCRIPTION OF SYMBOLS 1 1st terminal electrode 2 2nd terminal electrode 3 LED chip 10 Insulating substrate

───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 平９−135040（ＪＰ，Ａ) 特開 平９−205228（ＪＰ，Ａ) 特開 平７−86640（ＪＰ，Ａ) 特開 平８−78727（ＪＰ，Ａ) 特開 平５−175382（ＪＰ，Ａ) 特開 平８−78657（ＪＰ，Ａ) (58)調査した分野(Int.Cl.7，ＤＢ名) H01L 33/00 ────────────────────────────────────────────────── ─── Continuation of the front page (56) References JP-A-9-135040 (JP, A) JP-A-9-205228 (JP, A) JP-A-7-86640 (JP, A) JP-A 8- 78727 (JP, A) JP-A-5-175382 (JP, A) JP-A-8-78657 (JP, A) (58) Fields investigated (Int. Cl. 7 , DB name) H01L 33/00

Claims (1)

(57)【特許請求の範囲】(57) [Claims] 【請求項１】 絶縁性基板と、該絶縁性基板の表面の両
端部に設けられる第１および第２の端子電極と、少なく
とも前記第１および第２の端子電極の間の前記絶縁性基
板の表面が白色系に形成され、該白色系の基板表面上
に、発光する光に対して透明なボンディング剤により裏
面全面が接着されると共にｐ側電極およびｎ側電極がそ
れぞれ前記第１および第２の端子電極と電気的に接続さ
れる発光素子チップと、前記発光素子チップの周辺を被
覆するパッケージとからなり、前記絶縁性基板がチッ化
アルミナからなるチップ型発光素子。1. An insulating substrate, first and second terminal electrodes provided at both ends of a surface of the insulating substrate, and at least a portion of the insulating substrate between at least the first and second terminal electrodes. The front surface is formed white, and the entire back surface is adhered to the surface of the white substrate with a bonding agent transparent to emitted light, and the p-side electrode and the n-side electrode are the first and second electrodes, respectively. A light-emitting element chip electrically connected to the terminal electrode of the light-emitting element chip; and a package covering the periphery of the light-emitting element chip .
Chip type light emitting element made of alumina .
JP27103697A 1997-10-03 1997-10-03 Chip type light emitting device Expired - Lifetime JP3253265B2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP27103697A JP3253265B2 (en) 1997-10-03 1997-10-03 Chip type light emitting device
US09/165,284 US6121637A (en) 1997-10-03 1998-10-02 Semiconductor light emitting device with increased luminous power
DE1998145477 DE19845477A1 (en) 1997-10-03 1998-10-02 Light emitting semiconductor device
DE19861398A DE19861398B4 (en) 1997-10-03 1998-10-02 Light-emitting semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP27103697A JP3253265B2 (en) 1997-10-03 1997-10-03 Chip type light emitting device

Publications (2)

Publication Number Publication Date
JPH11112025A JPH11112025A (en) 1999-04-23
JP3253265B2 true JP3253265B2 (en) 2002-02-04

Family

ID=17494518

Family Applications (1)

Application Number Title Priority Date Filing Date
JP27103697A Expired - Lifetime JP3253265B2 (en) 1997-10-03 1997-10-03 Chip type light emitting device

Country Status (2)

Country Link
JP (1) JP3253265B2 (en)
DE (1) DE19845477A1 (en)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002368277A (en) * 2001-06-05 2002-12-20 Rohm Co Ltd Chip semiconductor light-emitting device
KR200299491Y1 (en) * 2002-09-02 2003-01-03 코리아옵토 주식회사 A Surface mounting type light emitting diode
US6998777B2 (en) 2002-12-24 2006-02-14 Toyoda Gosei Co., Ltd. Light emitting diode and light emitting diode array
JP4516337B2 (en) * 2004-03-25 2010-08-04 シチズン電子株式会社 Semiconductor light emitting device
JP5073179B2 (en) * 2005-06-09 2012-11-14 株式会社住友金属エレクトロデバイス Aluminum nitride sintered compact for storing light-emitting elements
TWI302043B (en) * 2006-06-27 2008-10-11 Everlight Electronics Co Ltd Base structure for ultra-thin light-emitting diode and manufacturing method thereof
US8128261B2 (en) 2006-08-25 2012-03-06 Sharp Kabushiki Kaisha Light emitting element, light emitting element array, backlight unit, and liquid crystal display
JP4544361B2 (en) * 2008-11-26 2010-09-15 日亜化学工業株式会社 Light emitting device
DE102010027748A1 (en) * 2010-04-14 2011-10-20 Osram Opto Semiconductors Gmbh Optoelectronic component e.g. LED, has bonding material formed with high reflectivity in range of maximum frequency and provided between semiconductor chip and lead frame, where chip is secured over bonding material on lead frame
JP5528900B2 (en) 2010-04-30 2014-06-25 ローム株式会社 Light emitting element module
JP5748611B2 (en) * 2011-08-22 2015-07-15 京セラ株式会社 Light emitting device
JP2013115271A (en) * 2011-11-29 2013-06-10 Toyoda Gosei Co Ltd Light emitting device
CN104205372B (en) 2012-05-31 2018-03-02 松下知识产权经营株式会社 LED module, lighting device and lamp
US9680075B2 (en) 2012-08-31 2017-06-13 Panasonic Intellectual Property Management Co., Ltd. Light-emitting device
DE102015109877A1 (en) * 2015-06-19 2016-12-22 Osram Opto Semiconductors Gmbh Optoelectronic component

Also Published As

Publication number Publication date
JPH11112025A (en) 1999-04-23
DE19845477A1 (en) 1999-04-08

Similar Documents

Publication Publication Date Title
US6121637A (en) Semiconductor light emitting device with increased luminous power
US10326059B2 (en) Thin film light emitting diode
JP5273486B2 (en) Lighting device
US8026527B2 (en) LED structure
US8692270B2 (en) Light emitting device
JP4773755B2 (en) Chip-type semiconductor light emitting device
JP3253265B2 (en) Chip type light emitting device
US20100102344A1 (en) Led device and illuminating apparatus
JP4678391B2 (en) Lighting equipment
JP2007242856A (en) Chip-type semiconductor light emitting device
JP2002026392A (en) Semiconductor light emitting device and its manufacturing method and semiconductor light emitting equipment
US20100224890A1 (en) Light emitting diode chip with electrical insulation element
JP4277508B2 (en) Semiconductor light emitting device
JP2007073575A (en) Semiconductor light emitting device
JP2003218397A (en) Semiconductor light emission device and light emission device for lighting using the same
JPH0786640A (en) Light emitting device
JP2001217461A (en) Compound light-emitting device
JP2005019609A (en) Package for light emitting diode and light emitting device using the same
JP4345591B2 (en) Light emitting device
JP2000091638A (en) Gallium nitride compound semiconductor light emitting element
JPH10209494A (en) Semiconductor light emitting device
US8455882B2 (en) High efficiency LEDs
KR101360881B1 (en) Light emitting diode with conductive connect line
JPH11177146A (en) Semiconductor light emitting element
JPH11112021A (en) Semiconductor light emitting device

Legal Events

Date Code Title Description
FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20101122

Year of fee payment: 9

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20111122

Year of fee payment: 10

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20111122

Year of fee payment: 10

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20121122

Year of fee payment: 11

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20121122

Year of fee payment: 11

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20131122

Year of fee payment: 12

EXPY Cancellation because of completion of term