JP3241913B2 - Sputtering equipment - Google Patents
Sputtering equipmentInfo
- Publication number
- JP3241913B2 JP3241913B2 JP32246793A JP32246793A JP3241913B2 JP 3241913 B2 JP3241913 B2 JP 3241913B2 JP 32246793 A JP32246793 A JP 32246793A JP 32246793 A JP32246793 A JP 32246793A JP 3241913 B2 JP3241913 B2 JP 3241913B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- forming
- chamber
- substrate
- cooling
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Description
【０００１】[0001]
【産業上の利用分野】本発明はスパッタリング装置に係
り、特に磁気ヘッドの磁性膜をスパッタリング法で形成
する量産用インラインスパッタリング装置あるいはロー
ドロックスパッタリング装置等における被成膜基板の冷
却に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a sputtering apparatus, and more particularly to cooling of a substrate to be formed in a mass production in-line sputtering apparatus or a load lock sputtering apparatus for forming a magnetic film of a magnetic head by a sputtering method.
【０００２】[0002]
【従来の技術】スパッタリング装置は、種々の材料によ
る薄膜形成手段の１つとして、半導体工業を始めとして
多くの分野で広く利用されている。薄膜磁気ヘッドの分
野でも磁性膜等をスパッタ法により形成する成膜技術が
確立している。特にマグネトロンスパッタ法は、ターゲ
ットからの電子のトラップ効果が高いために高真空中で
の成膜が可能であり、各磁気特性の向上に有効である。2. Description of the Related Art Sputtering apparatuses are widely used in many fields including the semiconductor industry as one of means for forming thin films of various materials. In the field of thin film magnetic heads, a film forming technique for forming a magnetic film or the like by a sputtering method has been established. In particular, the magnetron sputtering method has a high effect of trapping electrons from a target, so that film formation in a high vacuum is possible, and is effective in improving various magnetic characteristics.
【０００３】ところが、マグネトロンスパッタ法は、電
子をトラップするためにターゲット電極の背面に設けた
磁気装置により数百ガウスの磁場を形成しておくことが
必要であり、この磁場がターゲットの近傍のみに止まら
ず成膜基板の成膜面にも影響を及ぼし、特に磁性材の異
方性磁化膜を誘導する磁区の形成に大きく影響する。従
って、成膜基板面に平行に一方向の均一な外部磁場を印
加することによりカソード磁場の影響を低減した状態で
成膜を行なうことが不可欠となっている。このため、磁
性膜形成用スパッタリング装置では、成膜中の被成膜基
板にヘルムホルツコイルもしくは永久磁石などの磁気装
置により前記外部磁場を印加している。[0003] However, in the magnetron sputtering method, it is necessary to form a magnetic field of several hundred gauss by a magnetic device provided on the back surface of the target electrode in order to trap electrons, and this magnetic field is generated only in the vicinity of the target. It does not stop but also affects the deposition surface of the deposition substrate, and particularly greatly affects the formation of magnetic domains that induce the anisotropic magnetization film of the magnetic material. Therefore, it is indispensable to form a film in a state where the influence of the cathode magnetic field is reduced by applying a uniform external magnetic field in one direction in parallel with the surface of the film formation substrate. For this reason, in a sputtering apparatus for forming a magnetic film, the external magnetic field is applied to a substrate on which a film is being formed by a magnetic device such as a Helmholtz coil or a permanent magnet.
【０００４】一方、異方性を有する磁性材の保磁力を低
く押えることが、薄膜磁気ヘッドの特性向上に大きく寄
与することから、成膜前から被成膜基板を加熱し、加熱
状態で成膜を行なうプロセスが採用されている。特開昭
５９−１２６７７６号公報には、成膜基板面に磁場を印
加する方法が開示されている。On the other hand, since lowering the coercive force of the magnetic material having anisotropy greatly contributes to the improvement of the characteristics of the thin-film magnetic head, the substrate to be formed is heated before the film is formed. A film forming process is employed. JP-A-59-126776 discloses a method of applying a magnetic field to the surface of a deposition substrate.
【０００５】[0005]
【発明が解決しようとする課題】このように、磁性膜の
磁気特性を向上するために被成膜基板を加熱することに
より高温状態で成膜するスパッタリング装置では、成膜
後の被成膜基板を高温の状態で真空室外に取り出すと被
成膜基板の表面が酸化してしまうことから、被成膜基板
を冷却してから取り出すようにしている。As described above, in a sputtering apparatus for forming a film at a high temperature by heating the film-forming substrate in order to improve the magnetic characteristics of the magnetic film, the film-forming substrate after the film formation is used. If the substrate is taken out of the vacuum chamber at a high temperature, the surface of the substrate is oxidized. Therefore, the substrate is cooled before being taken out.
【０００６】バッチ式のスパッタリング装置では、成膜
と冷却を同一位置で行うので磁場の状態も一定であるこ
とから特に問題はないが、量産用として用いられるイン
ライン式あるいはロードロック式のスパッタリング装置
では、成膜位置と冷却位置が異なるため、均一な磁気特
性をもつようにスパッタされた磁性膜も冷却中にその磁
気異方性が冷却場の不均一な磁場により乱されるという
問題があった。In a batch type sputtering apparatus, film formation and cooling are performed at the same position, so that there is no particular problem because the state of the magnetic field is constant. However, in an in-line type or load lock type sputtering apparatus used for mass production, there is no problem. However, since the film forming position and the cooling position are different, the magnetic anisotropy of a sputtered magnetic film having uniform magnetic properties during cooling is disturbed by the non-uniform magnetic field of the cooling field. .
【０００７】本発明の目的は、均一な磁気特性の磁性膜
を形成することができるスパッタリング装置を提供する
ことにある。An object of the present invention is to provide a sputtering apparatus capable of forming a magnetic film having uniform magnetic properties.
【０００８】本発明の他の目的は、磁気異方性に優れた
磁性膜を形成することができるスパッタリング装置を提
供することにある。Another object of the present invention is to provide a sputtering apparatus capable of forming a magnetic film having excellent magnetic anisotropy.
【０００９】本発明の更に他の目的は、磁気特性に優れ
た磁性膜を効率良く形成することができる量産性に優れ
たスパッタリング装置を提供することにある。Still another object of the present invention is to provide a sputtering apparatus which can efficiently form a magnetic film having excellent magnetic properties and which is excellent in mass productivity.
【００１０】[0010]
【課題を解決するための手段】本発明は、成膜材料から
成るターゲット板を保持し且つ成膜時には陰極となるカ
ソード電極と、ターゲット板に対向位置するように被成
膜母材である被成膜基板を保持して移動可能な基板トレ
イなどの基板ホルダと、これらを収納する少なくとも１
つ以上の成膜室と、前記成膜室内を真空排気する排気装
置と、前記カソード電極と被成膜基板間の空間にスパッ
タ放電を生ぜしめるためのガスを成膜室内に導入するガ
ス導入口と、前記成膜室に設けられてこの成膜室におけ
る被成膜基板の成膜部分に均一な一方向性の磁場を印加
する成膜磁場形成装置と、成膜前または成膜中に被成膜
基板を加熱する加熱室、成膜室などの加熱領域と、成膜
後の被成膜基板を冷却する専用の冷却室、取出室、また
は複数の成膜室のうちの非磁性膜成膜室、または多元式
成膜室の非磁性膜成膜領域などの冷却領域と、該加熱領
域及び冷却領域内を真空排気する排気装置と、前記加熱
領域，成膜室及び冷却領域に前記基板ホルダを運搬する
搬送装置とを備えたスパッタリング装置において、１つ
の発明は、前記冷却領域の被成膜基板に成膜室における
印加磁場と同一方向の一方向性均一磁場を印加する冷却
磁場形成装置を前記冷却領域に設けたことを特徴とし、
他の発明は、前記成膜磁場形成装置によって前記成膜室
の被成膜基板に印加する印加磁場の漏洩磁束から前記冷
却領域を隔離する漏洩磁束遮断手段を設けたことを特徴
とする。According to the present invention, there is provided a cathode plate which holds a target plate made of a film-forming material and serves as a cathode during film-forming, and a substrate which is a film-forming base material facing the target plate. A substrate holder such as a substrate tray capable of holding and moving a film formation substrate, and at least one
One or more film forming chambers, an exhaust device for evacuating the film forming chamber, and a gas inlet for introducing a gas for generating a sputter discharge into a space between the cathode electrode and the substrate to be formed into the film forming chamber. A film forming magnetic field forming apparatus provided in the film forming chamber and applying a uniform unidirectional magnetic field to a film forming portion of a film formation target substrate in the film forming chamber ; Alternatively, a heating chamber for heating a film formation substrate during film formation, a heating region such as a film formation chamber, and a dedicated cooling room for cooling the film formation target substrate after film formation, an extraction chamber, or a plurality of film formation chambers. A cooling region such as a nonmagnetic film deposition region of the nonmagnetic film deposition chamber or the multi-component deposition chamber; an exhaust device for evacuating the heating region and the cooling region; And a transfer device for transferring the substrate holder to a cooling area. The cooled magnetic field generating apparatus which applies an applied magnetic field and unidirectional homogeneous magnetic field in the same direction in the film forming chamber to the deposition target substrate cooling region, characterized in that provided in the cooling area,
Another invention is characterized in that a leakage magnetic flux blocking means for isolating the cooling region from a leakage magnetic flux of an applied magnetic field applied to the deposition target substrate in the deposition chamber by the deposition magnetic field forming apparatus is provided.
【００１１】[0011]
【作用】被成膜基板は成膜時と同様な磁場中あるいは磁
場の影響が少ない環境で冷却されるので磁性膜の磁気特
性が乱されることがなく、従って、磁気異方性に優れ、
均一な磁気特性の磁性膜が形成される。The substrate to be formed is cooled in a magnetic field similar to that during film formation or in an environment where the influence of the magnetic field is small, so that the magnetic properties of the magnetic film are not disturbed, and therefore, the magnetic film has excellent magnetic anisotropy.
A magnetic film having uniform magnetic properties is formed.
【００１２】しかもこのような被成膜基板の冷却は成膜
室以外の位置で行うことができるので、量産性を害する
ことなく、磁気特性に優れた磁性膜の形成が可能とな
る。In addition, since the film-forming substrate can be cooled at a position other than the film-forming chamber, a magnetic film having excellent magnetic properties can be formed without deteriorating mass productivity.
【００１３】[0013]
【実施例】以下、本発明の実施例を図面を参照して説明
する。Embodiments of the present invention will be described below with reference to the drawings.
【００１４】図１に示す実施例はインライン式のスパッ
タリング装置であり、真空容器１は、ターゲット板２を
保持し、スパッタ放電を行わせる際には陰極となるカソ
ード電極３と、成膜される被成膜基板４を保持し、該被
成膜基板４の成膜面を前記ターゲット板２に対向するよ
うに位置させる基板ホルダとしての基板トレイ５を収納
している。搬入ユニット６は被成膜基板４を保持した基
板トレイ５を大気中の生産ラインから真空仕切弁７を介
して真空容器１内に搬入し、搬出ユニット８は真空仕切
弁９を介して該真空容器１内から基板トレー５を大気中
の生産ラインに搬出する。The embodiment shown in FIG. 1 is an in-line type sputtering apparatus, in which a vacuum vessel 1 holds a target plate 2 and forms a cathode electrode 3 serving as a cathode when performing a sputter discharge, and forms a film. A substrate tray 5 as a substrate holder that holds the film formation substrate 4 and positions the film formation surface of the film formation substrate 4 so as to face the target plate 2 is housed. The carry-in unit 6 carries the substrate tray 5 holding the film-formed substrate 4 from the production line in the atmosphere into the vacuum vessel 1 through the vacuum gate valve 7, and the carry-out unit 8 carries out the vacuum through the vacuum gate valve 9. The substrate tray 5 is carried out from the container 1 to a production line in the atmosphere.
【００１５】真空容器１内は真空仕切弁１０〜１３によ
って真空室１５〜１９に区画され、真空室１５は仕込
室，真空室１６は加熱室，真空室１７は成膜室，真空室
１８は冷却室，真空室１９は取出室として使用される。
なお、成膜室として使用される真空室１７はここでは１
つとして示されているが、複数でも良い。搬送系（図示
せず）は、搬入ユニット６から搬入される基板トレー５
を被成膜基板４を保持した状態で仕込室１５から取出室
１９まで搬送し、搬出ユニット８に送り出す。The inside of the vacuum vessel 1 is partitioned into vacuum chambers 15 to 19 by vacuum gate valves 10 to 13, wherein the vacuum chamber 15 is a charging chamber, the vacuum chamber 16 is a heating chamber, the vacuum chamber 17 is a film forming chamber, and the vacuum chamber 18 is a vacuum chamber. The cooling chamber and the vacuum chamber 19 are used as an extraction chamber.
The vacuum chamber 17 used as a film forming chamber is 1 in this case.
Although it is shown as one, a plurality may be used. The transport system (not shown) includes a substrate tray 5 loaded from the loading unit 6.
Is transported from the charging chamber 15 to the unloading chamber 19 while holding the film-forming substrate 4 and sent out to the unloading unit 8.
【００１６】各真空室１５〜１９は、各室の排気部から
粗引弁２０ａ〜２０ｅを介して共通のロータリーポンプ
２１で粗引きし、メイン弁２２〜２６を介してクライオ
ポンプ２７〜３１で高度の真空状態に排気する。スパッ
タ用ガスは、ガス導入口３２から成膜室１７内に導入す
る。Each of the vacuum chambers 15 to 19 is roughly evacuated from the exhaust part of each chamber by a common rotary pump 21 through roughing valves 20a to 20e, and is crushed by cryopumps 27 to 31 through main valves 22 to 26. Evacuate to a high vacuum. The sputtering gas is introduced into the film forming chamber 17 from the gas inlet 32.
【００１７】前記カソード電極３には高周波電源３３か
らマッチングボックス３４を介してスパッタ用高周波電
力を供給する。スパッタ用の電源は成膜材料によっては
直流電力でも良い。A high frequency power for sputtering is supplied to the cathode electrode 3 from a high frequency power supply 33 via a matching box 34. The power source for sputtering may be DC power depending on the material for forming the film.
【００１８】仕込室１５，加熱室１６及び成膜室１７は
それぞれヒータ３５〜３７を備え、基板ホルダ５と共に
搬入された被成膜基板４を加熱する。加熱室１６は、被
成膜基板４を所定の設定温度まで加熱した後に規定時間
保持し、この間に、被成膜基板４及び基板トレイ５に付
着したガス粒子を除去して成膜の質を高めるように機能
する。成膜室１７は、搬入された被成膜基板４を特性上
必要とされるプロセス温度に保持した状態でスパッタ放
電を行わせ、被成膜基板４の成膜面にスパッタ成膜を行
なう。The loading chamber 15, the heating chamber 16 and the film forming chamber 17 are provided with heaters 35 to 37, respectively, for heating the substrate 4 loaded together with the substrate holder 5. The heating chamber 16 holds the deposition target substrate 4 for a specified time after heating the deposition target substrate 4 to a predetermined set temperature, during which the gas particles attached to the deposition target substrate 4 and the substrate tray 5 are removed to improve the quality of the deposition. Works to enhance. The film forming chamber 17 performs sputter discharge while maintaining the loaded film-forming substrate 4 at a process temperature required for its characteristics, and forms a film by sputtering on the film-forming surface of the film-forming substrate 4.
【００１９】カソード電極３内の磁石により形成されて
ターゲット板２の表面上に漏洩しているマグネトロン磁
場は、被成膜基板４の成膜面にも影響を及ぼす。この影
響を軽減し、更に磁性膜に一軸異方性を付与するため
に、成膜室１７の外側両面に外部磁場源となるヘルムホ
ルツコイル３８ａ，３８ｂを設け、被成膜基板４の成膜
面に均一な磁場を供給し、マグネトロン磁場と外部磁場
との合成方向が外部磁場印加方向に対して最大でも数度
以下のずれとなるように調整する。この状態で成膜した
被成膜基板４の表面には磁性材に特徴付けられる一軸異
方性が付与され、この異方性の分散も数度程度に押えら
れる。成膜後の被成膜基板４は高温となっており、タク
ト範囲内での冷却を実施する。このタクトは、所定の温
度までの加熱時間または所定の温度までの冷却時間が支
配的となる。The magnetron magnetic field formed by the magnet in the cathode electrode 3 and leaking onto the surface of the target plate 2 also affects the film formation surface of the substrate 4 on which the film is formed. Helmholtz coils 38 a and 38 b serving as external magnetic field sources are provided on both outer surfaces of the film forming chamber 17 in order to reduce this effect and further impart uniaxial anisotropy to the magnetic film. Is adjusted so that the combined direction of the magnetron magnetic field and the external magnetic field deviates at most by several degrees or less with respect to the external magnetic field application direction. Uniaxial anisotropy, which is characteristic of a magnetic material, is imparted to the surface of the substrate 4 on which the film is formed in this state, and the dispersion of the anisotropy is suppressed to about several degrees. The temperature of the film-formed substrate 4 after film formation is high, and cooling is performed within the tact range. In this tact, a heating time to a predetermined temperature or a cooling time to a predetermined temperature is dominant.
【００２０】一方、成膜室１７内の被成膜基板４の成膜
面を均一な磁場とするためにヘルムホルツコイル３８
ａ，３８ｂにより発生する外部磁場は、冷却室１８及び
取出室１９に不均一な磁場を形成し、高温状態にある被
成膜基板４をこの不均一磁場中で冷却すると、磁性膜の
一部の磁気配向性がこの不均一磁場に影響されて異方性
分散が増大する。これは、磁気ヒステリシス特性（Ｂ−
Ｈカーブ）のヒステリシス中央部が膨れて磁気抵抗効果
特性での抵抗率のピークがずれることになり、好ましく
ない特性となる。On the other hand, a Helmholtz coil 38 is used to form a uniform magnetic field on the film formation surface of the substrate 4 in the film formation chamber 17.
The external magnetic field generated by the a and 38b forms an inhomogeneous magnetic field in the cooling chamber 18 and the extraction chamber 19, and when the deposition target substrate 4 in a high temperature state is cooled in the inhomogeneous magnetic field, a part of the magnetic film is formed. Is affected by the inhomogeneous magnetic field, and the anisotropic dispersion increases. This is because the magnetic hysteresis characteristic (B-
The central part of the hysteresis of the (H curve) expands, and the peak of the resistivity in the magnetoresistance effect characteristic shifts, which is an undesirable characteristic.
【００２１】従って、この実施例では、冷却室１８及び
取出室１９における基板ホルダ静止位置（冷却位置）に
前記成膜室１７における成膜位置と同一方向で同精度の
均一な一方向の磁場を印加し、冷却中の磁性膜の磁気配
向性が磁気的に安定な状態になる温度（好ましくは摂氏
１００度以下）に低下するまで変動しないようにしたも
のである。この一方向の均一な磁場を発生する磁場形成
装置としてヘルムホルツコイル３９ａ，３９ｂを備え、
前記冷却室１８及び取出室１９は搬入された成膜後の被
成膜基板４と接触して強制的に冷却する昇降式の水冷冷
却板４０，４１を備える。Accordingly, in this embodiment, a uniform unidirectional magnetic field in the same direction as the film forming position in the film forming chamber 17 is applied to the substrate holder stationary position (cooling position) in the cooling chamber 18 and the unloading chamber 19. The magnetic orientation of the applied magnetic film during application and cooling is kept from changing until it decreases to a temperature (preferably 100 degrees Celsius or less) at which the magnetic orientation becomes magnetically stable. Helmholtz coils 39a and 39b are provided as magnetic field forming devices for generating a uniform magnetic field in one direction,
The cooling chamber 18 and the unloading chamber 19 are provided with water-cooled cooling plates 40 and 41 of an up-and-down type for forcibly cooling by coming into contact with the loaded film-formed substrate 4.
【００２２】本発明になるこのスパッタリング装置によ
り一軸磁気異方性分散が±２度以下に改良された薄膜磁
気ヘッド用のパーマロイ磁性膜を形成することができ
た。因に、冷却環境の磁場の乱れを改良しない同様なス
パッタリング装置で得られる磁性膜の一軸磁気異方性分
散は±１０度以上である。With this sputtering apparatus according to the present invention, it was possible to form a permalloy magnetic film for a thin-film magnetic head in which the uniaxial magnetic anisotropic dispersion was improved to ± 2 degrees or less. Incidentally, the uniaxial magnetic anisotropy dispersion of the magnetic film obtained by a similar sputtering apparatus which does not improve the disturbance of the magnetic field in the cooling environment is ± 10 degrees or more.
【００２３】この冷却過程での好ましい磁場の印加は、
前述した冷却室１８，取出室１９に限らず、タクトが許
せれば複数の成膜室のうちの非磁性膜成膜室、多元式成
膜室での非磁性膜成膜位置やロードロック式スパッタリ
ング装置における仕込兼取出室で電磁コイルや永久磁石
により行うことができる。The preferable application of the magnetic field during the cooling process is as follows.
Not only the cooling chamber 18 and the extraction chamber 19 described above, but also a non-magnetic film forming chamber among a plurality of film forming chambers, a non-magnetic film forming position in a multi-component film forming chamber, a load lock type It can be performed by an electromagnetic coil or a permanent magnet in a charging / unloading chamber in a sputtering apparatus.
【００２４】図２は多元式成膜室を装備したロードロッ
ク式スパッタリング装置であり、多元式成膜室４２には
３ヵ所に処理部が設定され、仕込兼取出室４３を介して
搬出入ユニット４４に連結される。FIG. 2 shows a load-lock type sputtering apparatus equipped with a multi-layer film forming chamber. In the multi-layer film forming chamber 42, processing units are set at three locations. 44.
【００２５】このスパッタリング装置における前記冷却
磁場形成も、前記実施例と同様に、ヘルムホルツコイル
３９ａ，３９ｂで行うことができる。 The cooling in this sputtering apparatus
The magnetic field is formed in the same manner as in the above-described embodiment.
39a and 39b.
【００２６】図３に示すスパッタリング装置は、成膜室
１７におけるマグネトロン磁場及びヘルムホルツコイル
３８ａ，３８ｂによる外部磁場が冷却室１８に漏れ、冷
却中の被成膜基板４に不均一な磁場が作用して磁性膜の
磁気特性が乱されないように、成膜室１７とヘルツホル
ムコイル３８ａ，３８ｂの周囲を磁気シールド板４６で
包囲した構成である。In the sputtering apparatus shown in FIG. 3 , the magnetron magnetic field in the film forming chamber 17 and the external magnetic field generated by the Helmholtz coils 38a and 38b leak into the cooling chamber 18 and an uneven magnetic field acts on the substrate 4 being cooled. The magnetic shield plate 46 surrounds the film forming chamber 17 and the Hertzholm coils 38a and 38b so that the magnetic characteristics of the magnetic film are not disturbed.
【００２７】磁気シールド板４６は冷却室１８において
冷却中の被成膜基板４に不都合な磁場が作用するのを防
止できる形状であれば足りる。更に、成膜室１７におけ
るマグネトロン磁場及びヘルムホルツコイル３８ａ，３
８ｂによる外部磁場が冷却中の被成膜基板４に不均一な
磁場が作用して磁性膜の磁気特性を乱されないような離
れた位置に冷却室１８を設置することにより、格別な磁
気シールド板４６を省略することができる。The magnetic shield plate 46 only needs to have a shape capable of preventing an undesired magnetic field from acting on the substrate 4 being cooled in the cooling chamber 18. Further, the magnetron magnetic field and the Helmholtz coils 38a, 3a in the film forming chamber 17 are used.
By setting the cooling chamber 18 at a remote position so that the magnetic field of the magnetic film is not disturbed due to the non-uniform magnetic field acting on the film-forming substrate 4 being cooled by the external magnetic field due to the magnetic shield plate 8b, 46 can be omitted.
【００２８】前記各実施例における冷却室１８は水冷冷
却板以外の冷却手段による冷却も可能であり、また、取
出室１９にも冷却を助長する手段を付加することによ
り、磁気特性に優れた磁性膜を一層効率良く形成するこ
とができるようになる。In each of the above embodiments, the cooling chamber 18 can be cooled by a cooling means other than the water-cooled cooling plate, and the take-out chamber 19 is provided with a means for promoting cooling, so that the cooling chamber 18 has excellent magnetic properties. The film can be formed more efficiently.
【００２９】[0029]
【発明の効果】本発明は、冷却領域の被成膜基板に成膜
室における印加磁場と同一方向の一方向性均一磁場を印
加する冷却磁場形成装置を冷却領域に設け、あるいは、
成膜磁場形成装置によって成膜室の被成膜基板に印加す
る印加磁場の漏洩磁束から冷却領域を隔離する漏洩磁束
遮断手段を設けたことにより、磁気異方性に優れた均一
な磁気特性の磁性膜を形成することができる効果が得ら
れる。According to the present invention, a cooling magnetic field forming apparatus for applying a unidirectional uniform magnetic field in the same direction as a magnetic field applied in a film forming chamber to a film formation target substrate in a cooling area is provided in a cooling area .
Uniform magnetic characteristics with excellent magnetic anisotropy are provided by providing a leakage magnetic flux blocking unit that isolates the cooling region from the leakage magnetic flux of the applied magnetic field applied to the film formation substrate in the film formation chamber by the film formation magnetic field forming apparatus. The effect that a magnetic film can be formed is obtained.
【００３０】また、被成膜基板の冷却は成膜室以外の位
置で行うようにしたので、磁気特性に優れた磁性膜を効
率良く形成することができる量産性に優れたスパッタリ
ング装置が得られる効果がある。Further, since the substrate to be formed is cooled at a position other than the film forming chamber, a sputtering apparatus excellent in mass productivity capable of efficiently forming a magnetic film having excellent magnetic properties can be obtained. effective.
【図１】本発明になるインライン式スパッタリング装置
の縦断側面図である。FIG. 1 is a vertical sectional side view of an in-line type sputtering apparatus according to the present invention.
【図２】本発明になるロードロック式スパッタリング装
置の縦断側面図である。FIG. 2 is a vertical sectional side view of a load lock type sputtering apparatus according to the present invention.
【図３】本発明になる更に他のスパッタリング装置の縦
断側面図である。FIG. 3 is a vertical sectional side view of still another sputtering apparatus according to the present invention.
１ 真空容器 ２ ターゲット板 ３ カソード電極 ４ 被成膜基板 ５ 基板トレイ １７ 成膜室 １８ 冷却室 ３８ａ，３８ｂ，３９ａ，３９ｂ ヘルムホルツコイル DESCRIPTION OF SYMBOLS 1 Vacuum container 2 Target plate 3 Cathode electrode 4 Deposition substrate 5 Substrate tray 17 Film formation room 18 Cooling room 38a, 38b, 39a, 39b Helmholtz coil
───────────────────────────────────────────────────── フロントページの続き (58)調査した分野(Int.Cl.7，ＤＢ名) C23C 14/00 - 14/58 ──────────────────────────────────────────────────続 き Continued on the front page (58) Field surveyed (Int.Cl. 7 , DB name) C23C 14/00-14/58
Claims (4)
且つ成膜時には陰極となるカソード電極と、ターゲット
板に対向位置するように被成膜母材である被成膜基板を
保持して移動可能な基板ホルダと、これらを収納する少
なくとも１つ以上の成膜室と、前記成膜室内を真空排気
する排気装置と、前記カソード電極と被成膜基板間の空
間にスパッタ放電を生ぜしめるためのガスを成膜室内に
導入するガス導入口と、前記成膜室に設けられてこの成
膜室における被成膜基板の成膜部分に均一な一方向性磁
場を印加する成膜磁場形成装置と、成膜前または成膜中
に被成膜基板を加熱する加熱領域及び成膜後の被成膜基
板を冷却する冷却領域と、該加熱領域及び冷却領域内を
真空排気する排気装置と、前記加熱領域，成膜室及び冷
却領域に前記基板ホルダを運搬する搬送装置とを備えた
スパッタリング装置において、 前記冷却領域の被成膜基板に前記成膜室における印加磁
場と同一方向の一方向性均一磁場を印加する冷却磁場形
成装置を前記冷却領域に設けたことを特徴とするスパッ
タリング装置。A target plate made of a film-forming material is held, and a cathode electrode serving as a cathode during film formation and a film-forming substrate as a base material for film formation are moved while being opposed to the target plate. A possible substrate holder, at least one or more film forming chambers for accommodating them, an exhaust device for evacuating the film forming chamber, and a sputter discharge in a space between the cathode electrode and the substrate to be formed. A gas inlet for introducing a gas into the film forming chamber; and a gas inlet provided in the film forming chamber.
A film- forming magnetic field forming apparatus for applying a uniform unidirectional magnetic field to a film-forming portion of a film-forming substrate in a film chamber ; a heating region for heating the film-forming substrate before or during film formation; Sputtering system comprising: a cooling region for cooling a film-forming substrate; an exhaust device for evacuating the heating region and the cooling region; and a transfer device for transporting the substrate holder to the heating region, the film forming chamber and the cooling region. In the sputtering apparatus, a cooling magnetic field forming device that applies a unidirectional uniform magnetic field in the same direction as the applied magnetic field in the film formation chamber to the film formation substrate in the cooling region is provided in the cooling region .
且つ成膜時には陰極となるカソード電極と、ターゲット
板と対向位置するように被成膜母材である被成膜基板を
保持して移動可能な基板ホルダと、これらを収納する少
なくとも１つ以上の成膜室と、前記成膜室内を真空排気
する排気装置と、前記カソード電極と被成膜基板間の空
間にスパッタ放電を生ぜしめるためのガスを成膜室内に
導入するガス導入口と、前記成膜室に設けられてこの成
膜室における被成膜基板の成膜部分に均一な一方向性磁
場を印加する成膜磁場形成装置と、成膜前または成膜中
に被成膜基板を加熱する加熱領域及び成膜後の被成膜基
板を冷却する冷却領域と、該加熱領域及び冷却領域内を
真空排気する排気装置と、前記加熱領域，成膜室及び冷
却領域に前記基板ホルダを運搬する搬送装置とを備えた
スパッタリング装置において、前記成膜磁場形成装置によって 前記成膜室の被成膜基板
に印加する印加磁場の漏洩磁束から前記冷却領域を隔離
する漏洩磁束遮断手段を設けたことを特徴とするスパッ
タリング装置。2. A target plate made of a film-forming material is held, and a cathode electrode serving as a cathode during film formation and a film-forming substrate as a base material for film formation are moved while being opposed to the target plate. A possible substrate holder, at least one or more film forming chambers for accommodating them, an exhaust device for evacuating the film forming chamber, and a sputter discharge in a space between the cathode electrode and the substrate to be formed. A gas inlet for introducing a gas into the film forming chamber; and a gas inlet provided in the film forming chamber.
A film- forming magnetic field forming apparatus for applying a uniform unidirectional magnetic field to a film-forming portion of a film-forming substrate in a film chamber ; a heating region for heating the film-forming substrate before or during film formation; Sputtering system comprising: a cooling region for cooling a film-forming substrate; an exhaust device for evacuating the heating region and the cooling region; and a transfer device for transporting the substrate holder to the heating region, the film forming chamber and the cooling region. The sputtering apparatus, further comprising: a leakage magnetic flux blocking unit that isolates the cooling region from a leakage magnetic flux of an applied magnetic field applied to the deposition target substrate in the deposition chamber by the deposition magnetic field forming apparatus.
において、前記冷却領域は、前記成膜室に連結された専
用の冷却室、または成膜後の被成膜基板を真空側から大
気側に送り出す取出室、または前記専用の冷却室および
取出室であることを特徴とするスパッタリング装置。3. The cooling area according to claim 1, wherein the cooling area is a dedicated cooling chamber connected to the film forming chamber, or a film formation target substrate after film formation is formed from a vacuum side. A sputtering apparatus, which is an extraction chamber for sending out to the atmosphere side or the exclusive cooling chamber and the extraction chamber.
において、前記成膜室は複数からなり、前記冷却領域は
前記複数の成膜室のうちの非磁性膜成膜室であることを
特徴とするスパッタリング装置。4. The film forming chamber according to claim 1, wherein the plurality of film forming chambers are formed, and the cooling region is a non-magnetic film forming chamber among the plurality of film forming chambers. A sputtering apparatus characterized by the above-mentioned.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP32246793A JP3241913B2 (en) | 1993-12-21 | 1993-12-21 | Sputtering equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP32246793A JP3241913B2 (en) | 1993-12-21 | 1993-12-21 | Sputtering equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH07173628A JPH07173628A (en) | 1995-07-11 |
| JP3241913B2 true JP3241913B2 (en) | 2001-12-25 |
Family
ID=18143976
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP32246793A Expired - Fee Related JP3241913B2 (en) | 1993-12-21 | 1993-12-21 | Sputtering equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3241913B2 (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101487382B1 (en) * | 2008-10-22 | 2015-01-29 | 주식회사 원익아이피에스 | In-line type semiconductor manufacturing device |
| CN101903559B (en) | 2009-03-02 | 2012-09-05 | 佳能安内华股份有限公司 | Substrate processing device, manufacturing device of magnetic device |
| CN105112873A (en) * | 2015-09-22 | 2015-12-02 | 京东方科技集团股份有限公司 | Magnetron sputtering device and magnetron sputtering method |
-
1993
- 1993-12-21 JP JP32246793A patent/JP3241913B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH07173628A (en) | 1995-07-11 |
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