JP3235627B2 - Distributed feedback semiconductor laser and method of manufacturing the same - Google Patents
Distributed feedback semiconductor laser and method of manufacturing the sameInfo
- Publication number
- JP3235627B2 JP3235627B2 JP01748993A JP1748993A JP3235627B2 JP 3235627 B2 JP3235627 B2 JP 3235627B2 JP 01748993 A JP01748993 A JP 01748993A JP 1748993 A JP1748993 A JP 1748993A JP 3235627 B2 JP3235627 B2 JP 3235627B2
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- periodic structure
- semiconductor substrate
- layer
- semiconductor laser
- diffraction grating
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Description
【０００１】[0001]
【産業上の利用分野】この発明は、光通信、光情報処理
（光集積回路）等の分野で光源として用いられる半導体
レーザに関し、特に分布帰還型半導体レーザの構造に関
するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor laser used as a light source in fields such as optical communication and optical information processing (optical integrated circuit), and more particularly to a structure of a distributed feedback semiconductor laser.
【０００２】[0002]
【従来の技術】従来、分布帰還型半導体レーザは、単一
モード性が優れ、高速動作に適するため、光通信、光情
報処理（光集積回路）等の情報伝達に光を用いる分野に
おいて、その光源として用いられている。2. Description of the Related Art Conventionally, distributed feedback semiconductor lasers have excellent single mode characteristics and are suitable for high-speed operation. Therefore, in the field of using light for information transmission such as optical communication, optical information processing (optical integrated circuit), etc. It is used as a light source.
【０００３】この分布帰還型半導体レーザは、例えばKA
ZUO SAKAI etc."1.5μm Range InGaAsP/InP Distribute
d Feedback Lasers",IEEE J. of Quantum Electronics
vol.QE-18 No.8,pp.1272-1278,1982に示されているよう
に、光導波層となる活性層の上側ないし下側のいずれか
一方に周期的な屈折率変動を持つ回折格子層を作り込む
ことで光を分布的に帰還させ発振を得ており、この回折
格子層の周期構造を作製する技術が必須である。[0003] This distributed feedback semiconductor laser is, for example, KA
ZUO SAKAI etc. "1.5μm Range InGaAsP / InP Distribute
d Feedback Lasers ", IEEE J. of Quantum Electronics
As shown in vol.QE-18 No.8, pp.1272-1278,1982, diffraction with periodic refractive index fluctuations on either the upper or lower side of the active layer that becomes the optical waveguide layer By forming a grating layer, light is distributed and fed back to obtain oscillation, and a technique for fabricating a periodic structure of this diffraction grating layer is essential.
【０００４】なお、この周期構造の周期は通常極めて短
く、例えば１．３μｍ帯のレーザ発振を得る場合、０．
２μｍ程度になる。また、このような微細な周期構造を
得るために、通常、干渉露光法を用いるのが一般的であ
り、この干渉露光法では、光導波層が作り込まれた半導
体基板表面にレジストを塗布した後、２方向からレーザ
光を照射することでできる干渉パターンで露光し、この
格子状のレジストを用いて現像、エッチングすることで
表面全体に回折格子の周期構造を作り込んでいる。The period of this periodic structure is usually very short. For example, when laser oscillation in the 1.3 μm band is obtained, the period is 0.1 mm.
It is about 2 μm. In addition, in order to obtain such a fine periodic structure, it is common to use an interference exposure method. In this interference exposure method, a resist is applied to the surface of a semiconductor substrate in which an optical waveguide layer is formed. Thereafter, exposure is performed with an interference pattern formed by irradiating laser beams from two directions, and development and etching are performed using this grid-like resist, thereby forming a periodic structure of a diffraction grating on the entire surface.
【０００５】一方、一般的な半導体レーザは、活性層か
ら出力される光を伝送路となる光ファイバに結合させて
用いるため、出力端の光強度分布が、上下、左右に対称
で、かつ光ファイバと同じ円形に近いほどより効率よく
結合できる。On the other hand, since a general semiconductor laser is used by coupling light output from an active layer to an optical fiber serving as a transmission line, the light intensity distribution at the output end is vertically and horizontally symmetric, and The closer to the same circle as the fiber, the more efficient the coupling.
【０００６】したがって、その構造は例えば図４（ａ）
に示すように、活性層１に対し垂直方向に第１及び第２
のガイド層２ａ、２ｂを設け、さらに第１及び第２のク
ラッド層３ａ、３ｂを設けることで、同図（ｂ）に示す
ような活性層１を中心として垂直方向に対称な屈折率分
布にし、出力端面における光強度分布を同図（ｃ）に示
しように対称にしている。Therefore, the structure is, for example, as shown in FIG.
As shown in FIG.
By providing the guide layers 2a and 2b, and further providing the first and second cladding layers 3a and 3b, a refractive index distribution symmetrical in the vertical direction with respect to the active layer 1 as shown in FIG. The light intensity distribution at the output end face is symmetrical as shown in FIG.
【０００７】これに対し、従来の分布帰還型半導体レー
ザの構造は、図５（ａ）に示すように、活性層１の上側
（下側であってもよい）に設けられた第１のガイド層２
ａと第１のクラッド層３ａとの間に回折格子層４を設
け、光をこの回折格子層４で分布的に帰還させることで
発振を得ている。On the other hand, as shown in FIG. 5A, the structure of the conventional distributed feedback semiconductor laser has a first guide provided above (or below) the active layer 1. Layer 2
A diffraction grating layer 4 is provided between the first cladding layer 3a and the first cladding layer 3a, and light is distributed in the diffraction grating layer 4 to obtain oscillation.
【０００８】[0008]
【発明が解決しようとする課題】従来の分布帰還型半導
体レーザは、以上のように活性層の上側あるいは下側の
いずれか一方に回折格子層を設けた構造になっているの
で、このレーザ出力端面における屈折率分布は図５
（ｂ）に示すように活性層を中心として垂直方向に対称
にならず、したがって同図（ｃ）に示すように光強度分
布も活性層を中心にして垂直方向に非対称な分布とな
り、光ファイバへ効率よく結合することができないとい
う課題があった。As described above, the conventional distributed feedback semiconductor laser has a structure in which a diffraction grating layer is provided on either the upper side or the lower side of the active layer. The refractive index distribution at the end face is shown in FIG.
As shown in FIG. 2B, the light intensity distribution is not vertically symmetrical about the active layer, and therefore the light intensity distribution is also vertically asymmetrical about the active layer as shown in FIG. There was a problem that it was not possible to combine efficiently.
【０００９】この発明は上記のような課題を解決するた
めになされたもので、光ファイバへの結合効率を向上さ
せる分布帰還型半導体レーザの構造及びその製造方法を
提供することを目的としてする。SUMMARY OF THE INVENTION It is an object of the present invention to provide a structure of a distributed feedback semiconductor laser for improving the coupling efficiency to an optical fiber and a method of manufacturing the same.
【００１０】[0010]
【課題を解決するための手段】この発明に係る分布帰還
型半導体レーザは、活性層の一方の表面側に形成された
ガイド層とクラッド層との間に作り込まれた周期的な屈
折率変動あるいは利得変動を得る周期構造を有する回折
格子層の出力端近傍に、この周期構造のないフラット領
域を設けることで、この出力端近傍において、活性層に
対して垂直方向の屈折率分布を対称にする構造としたこ
とを特徴としている。なお、この回折格子層は活性層に
対して上側に構成しても下側に構成してもよい。A distributed feedback semiconductor laser according to the present invention has a periodic refractive index fluctuation generated between a guide layer and a clad layer formed on one surface side of an active layer. Alternatively, by providing a flat region without this periodic structure near the output end of a diffraction grating layer having a periodic structure for obtaining gain fluctuation, the refractive index distribution in the vertical direction with respect to the active layer is symmetrically formed near the output end. It is characterized by having a structure that does. The diffraction grating layer may be formed on the upper side or the lower side of the active layer.
【００１１】特に、上記回折格子層の出力端近傍に設け
られたフラット領域は、導波方向の長さが当該分布帰還
型半導体レーザの導波方向の長さと比較して十分に短
く、かつ当該分布帰還型半導体レーザ自身の特性に影響
しない長さであり、具体的には、通常３００〜１０００
μｍのレーザ長（導波方向の長さ）に対し１０〜２０μ
ｍ程度作り込まれる。In particular, in the flat region provided near the output end of the diffraction grating layer, the length in the waveguide direction is sufficiently shorter than the length in the waveguide direction of the distributed feedback semiconductor laser. The length is such that it does not affect the characteristics of the distributed feedback semiconductor laser itself.
10-20μ for μm laser length (length in the waveguide direction)
about m.
【００１２】また、その製造方法は、干渉露光法に先立
ち予め上記フラット領域にする所定の領域を一定幅にわ
たり露光することで周期構造をなくすか、あるいは予め
光導波層が作り込まれた基板全面に干渉露光法により周
期構造を作製した後、所定の領域を一定幅にわたりエッ
チングすることで周期構造をなくすことを特徴としてい
る。[0012] Further, the manufacturing method is to eliminate the periodic structure by exposing a predetermined area to be the flat area to a predetermined width in advance prior to the interference exposure method, or to eliminate the entire surface of the substrate in which the optical waveguide layer is formed in advance. After a periodic structure is produced by an interference exposure method, a predetermined region is etched over a predetermined width to eliminate the periodic structure.
【００１３】[0013]
【作用】この発明における分布帰還型半導体レーザは、
回折格子層の出力端近傍に、周期的な屈折率変動あるい
は利得変動を得る周期構造のないフラット領域を設ける
ことで、この周期構造を有する部分における活性層を中
心とした垂直方向の屈折率分布は非対称であるが、出力
端近傍において、活性層に対して垂直方向の屈折率分布
が対称になるので、レーザ出力端面における光強度分布
は活性層に対して垂直方向の対称性が保証される。The distributed feedback semiconductor laser according to the present invention comprises:
By providing a flat region without periodic structure for obtaining periodic refractive index fluctuation or gain fluctuation near the output end of the diffraction grating layer, the refractive index distribution in the vertical direction around the active layer in the portion having this periodic structure Is asymmetric, but in the vicinity of the output end, the refractive index distribution in the direction perpendicular to the active layer is symmetrical, so that the light intensity distribution at the laser output end face is guaranteed to be symmetrical in the direction perpendicular to the active layer. .
【００１４】特に、上記回折格子層の出力端近傍に設け
られたフラット領域は、導波方向の長さが１０〜２０μ
ｍ程度であり、当該分布帰還型半導体レーザの導波方向
の長さ３００〜１０００μｍと比較して十分に短いの
で、当該分布帰還型半導体レーザ自身の特性を損なうこ
とがない。In particular, the flat region provided near the output end of the diffraction grating layer has a length in the waveguide direction of 10 to 20 μm.
m, which is sufficiently shorter than the length of 300-1000 μm in the waveguide direction of the distributed feedback semiconductor laser, so that the characteristics of the distributed feedback semiconductor laser itself are not impaired.
【００１５】また、その製造方法は、干渉露光法に先立
ち予め上記フラット領域にする所定の領域を一定幅にわ
たり露光するか、あるいは予め光導波層が作り込まれた
基板全面に干渉露光法により周期構造を作製した後、所
定部分を一定幅にわたりエッチングすることにより、回
折格子層における所望の位置の屈折率変動あるいは利得
変動の周期構造をなくす。Further, the manufacturing method may be such that a predetermined area to be the flat area is previously exposed to a predetermined width before the interference exposure method, or the entire surface of the substrate on which the optical waveguide layer has been previously formed is periodically exposed by the interference exposure method. After the structure is formed, a predetermined portion is etched over a certain width to eliminate a periodic structure of a refractive index fluctuation or a gain fluctuation at a desired position in the diffraction grating layer.
【００１６】[0016]
【実施例】以下、この発明の一実施例を図１乃至図３を
用いて説明する。なお、図中同一部分には同一符号を付
して説明を省略する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS One embodiment of the present invention will be described below with reference to FIGS. In the drawings, the same portions are denoted by the same reference numerals, and description thereof is omitted.
【００１７】図１は、この発明に係る分布帰還型半導体
レーザの構造を示す斜視断面図であり、この分布帰還型
半導体レーザは光導波層となる活性層１の両表面にガイ
ド層２ａ、２ｂを形成し、この活性層１の上側あるいは
下側のいずれか一方であって、例えばガイド層２ａとク
ラッド層３ａとの間に周期的な屈折率変動あるいは利得
変動を有する回折格子層４が作り込まれている（なお、
ここでは回折格子層４はガイド層２ａとクラッド層３ａ
との界面に作り込まれた回折格子を含む部分をいう）。FIG. 1 is a perspective sectional view showing the structure of a distributed feedback semiconductor laser according to the present invention. The distributed feedback semiconductor laser has guide layers 2a and 2b on both surfaces of an active layer 1 serving as an optical waveguide layer. And a diffraction grating layer 4 having a periodic refractive index fluctuation or gain fluctuation on either the upper side or the lower side of the active layer 1 and between the guide layer 2a and the cladding layer 3a, for example. (Note that
Here, the diffraction grating layer 4 is composed of the guide layer 2a and the cladding layer 3a.
(Refer to the part including the diffraction grating formed at the interface with).
【００１８】そして、この回折格子層４は活性層１に対
して導波方向に全面に作り込まれるのではなく、上記周
期構造を有さないフラット領域５が出力端近傍に設けら
れている。The diffraction grating layer 4 is not formed on the entire surface of the active layer 1 in the waveguide direction, but a flat region 5 having no periodic structure is provided near the output end.
【００１９】以上のような構造により、当該分布帰還型
半導体レーザの活性層１に対する垂直方向の屈折率分布
は、この周期構造を有する部分（図１中、Ａ−Ａ´で示
す部分）において図２（ａ）に示すように活性層１に対
して非対称となる。一方、周期構造を有さない部分（図
１中、Ｂ−Ｂ´で示す部分）では図２（ｂ）に示すよう
に活性層１に対して対称となるため、出力端面にいける
光強度分布は活性層１に対して垂直方向の対称性が保証
される。With the structure described above, the refractive index distribution in the direction perpendicular to the active layer 1 of the distributed feedback semiconductor laser is shown in a portion having this periodic structure (portion indicated by AA 'in FIG. 1). As shown in FIG. 2A, the active layer 1 is asymmetric. On the other hand, a portion having no periodic structure (a portion indicated by BB ′ in FIG. 1) is symmetric with respect to the active layer 1 as shown in FIG. Is assured of vertical symmetry with respect to the active layer 1.
【００２０】次に、上記構造の分布帰還型半導体レーザ
の製造方法について図３を用いて説明する。Next, a method of manufacturing a distributed feedback semiconductor laser having the above structure will be described with reference to FIG.
【００２１】まず、第１の工程において、予め光導波層
が作り込まれている半導体基板６表面（この半導体基板
６にはすでにガイド層２ａ、２ｂ及びクラッド層３ｂが
作り込まれている）にレジスト７を塗布し、マスク８を
用いて所定部分を一定幅にわたって露光する（図３
（ａ））。First, in the first step, the surface of the semiconductor substrate 6 on which the optical waveguide layer has been formed (the guide layers 2a, 2b and the cladding layer 3b have already been formed on the semiconductor substrate 6). A resist 7 is applied, and a predetermined portion is exposed over a predetermined width using a mask 8 (FIG. 3).
(A)).
【００２２】そして、続けて干渉露光法によって半導体
基板６表面の全体を干渉パターンで露光する（図３
（ｂ））。Subsequently, the entire surface of the semiconductor substrate 6 is exposed in an interference pattern by an interference exposure method (FIG. 3).
(B)).
【００２３】次に、上記半導体基板６表面を露光された
格子状のレジスト７を用いて現像、エッチングし、回折
格子の周期構造を有する回折格子層４と周期構造のない
フラット領域５を形成する（図３（ｃ））。Next, the surface of the semiconductor substrate 6 is developed and etched by using an exposed grid-like resist 7 to form a diffraction grating layer 4 having a periodic structure of the diffraction grating and a flat region 5 having no periodic structure. (FIG. 3 (c)).
【００２４】そして、以上のように部分的に回折格子の
周期構造が形成された半導体基板６表面にクラッド層３
ａとなる層を形成し、回折格子の周期構造のないフラッ
ト領域５を出力端面として、活性層１に対し垂直方向に
切断することでこの発明に係る分布帰還型半導体レーザ
を作製する（図３（ｄ））。The cladding layer 3 is formed on the surface of the semiconductor substrate 6 where the periodic structure of the diffraction grating is partially formed as described above.
The distributed feedback semiconductor laser according to the present invention is manufactured by forming a layer to be a and cutting the flat region 5 having no periodic structure of the diffraction grating as an output end face in a direction perpendicular to the active layer 1 (FIG. 3). (D)).
【００２５】なお、上記実施例では半導体基板６表面を
一定幅にわたり周期構造を取り除く別の手段として、マ
スク８を用いて露光した後に干渉露光法による干渉パタ
ーンでさらに露光するようにしたが、上記干渉露光法に
よる干渉パターンで半導体基板６表面の全体に周期構造
を作製した後、所定の部分のみ再度エッチングし、周期
構造をなくすようにしても同様の効果を奏する。In the above embodiment, as another means for removing the periodic structure over the surface of the semiconductor substrate 6 over a certain width, the semiconductor substrate 6 is exposed using the mask 8 and then exposed further using the interference pattern by the interference exposure method. The same effect can be obtained even if a periodic structure is formed on the entire surface of the semiconductor substrate 6 by an interference pattern by the interference exposure method, and then only a predetermined portion is etched again to eliminate the periodic structure.
【００２６】[0026]
【発明の効果】以上のようにこの発明によれば、活性層
の一方の表面側に形成されたガイド層とクラッド層との
間に作り込まれた周期的な屈折率変動あるいは利得変動
を得る周期構造を有する回折格子層の出力端近傍に、こ
の周期構造のないフラット領域を設け、この出力端近傍
において、活性層に対して垂直方向の屈折率分布を対称
にする構造とすることにより、上記活性層を中心とした
光強度分布の対称性が保証され、これにより光ファイバ
への結合効率が向上するので、同等の性能を有する従来
の分布帰還型半導体レーザ（例えば図５）に比べ、光フ
ァイバに結合した光は多くなり、実質的に光出力の増加
と同等の効果がある。As described above, according to the present invention, a periodic refractive index variation or gain variation created between the guide layer and the cladding layer formed on one surface side of the active layer can be obtained. By providing a flat region without this periodic structure in the vicinity of the output end of the diffraction grating layer having a periodic structure, and in the vicinity of the output end, by making the refractive index distribution perpendicular to the active layer symmetrical, Since the symmetry of the light intensity distribution centered on the active layer is guaranteed and the coupling efficiency to the optical fiber is improved, compared with a conventional distributed feedback semiconductor laser having the same performance (for example, FIG. 5). The amount of light coupled to the optical fiber increases, and has substantially the same effect as an increase in light output.
【００２７】さらに、各種光通信システムにおいては、
光出力が実質的に増加することにより、Ｓ／Ｎ比の向上
させ、伝送距離を飛躍的に増大させるという効果があ
る。Further, in various optical communication systems,
By substantially increasing the optical output, there is an effect that the S / N ratio is improved and the transmission distance is dramatically increased.
【図１】この発明に係る分布帰還型半導体レーザの一実
施例による構成を示す斜視断面図である。FIG. 1 is a perspective sectional view showing a configuration of a distributed feedback semiconductor laser according to an embodiment of the present invention.
【図２】この発明に係る分布帰還型半導体レーザ各部に
おける活性層に対して垂直方向の屈折率分布を示す図で
ある。FIG. 2 is a diagram showing a refractive index distribution in a direction perpendicular to an active layer in each section of the distributed feedback semiconductor laser according to the present invention.
【図３】この発明に係る分布帰還型半導体レーザの製造
方法における各工程を説明するための図である。FIG. 3 is a diagram for explaining each step in a method of manufacturing a distributed feedback semiconductor laser according to the present invention.
【図４】一般的な半導体レーザの構成を示す断面図であ
る。FIG. 4 is a cross-sectional view illustrating a configuration of a general semiconductor laser.
【図５】従来の分布帰還型半導体レーザの構成を示す断
面図である。FIG. 5 is a cross-sectional view showing a configuration of a conventional distributed feedback semiconductor laser.
１…活性層、２ａ…第１のガイド層、２ｂ…第２のガイ
ド層、３ａ…第１のクラッド層、３ｂ…第２のクラッド
層、４…回折格子層、５…フラット領域、６…半導体基
板、７…レジスト、７…マスク。DESCRIPTION OF SYMBOLS 1 ... Active layer, 2a ... 1st guide layer, 2b ... 2nd guide layer, 3a ... 1st clad layer, 3b ... 2nd clad layer, 4 ... Diffraction grating layer, 5 ... Flat area, 6 ... Semiconductor substrate, 7 resist, 7 mask.
フロントページの続き (58)調査した分野(Int.Cl.7，ＤＢ名) H01S 5/00 - 5/50 Continuation of front page (58) Field surveyed (Int.Cl. 7 , DB name) H01S 5/00-5/50
Claims (3)
ド層とクラッド層との間に、周期的に屈折率変動あるい
は利得変動を周期構造を有し、光を分布的に帰還させて
発振を得るための回折格子層が作り込まれた分布帰還型
半導体レーザにおいて、 前記回折格子の出力端近傍のみに前記周期構造のないフ
ラット領域が設けられており、 前記フラット領域が設けられた出力端近傍における前記
活性層に対して垂直方向の屈折率分布が、該垂直方向の
光強度分布の対称性が補償されるよう、該活性層を中心
として対称になっていることを特徴とする分布帰還型半
導体レーザ。特徴とする請求項１記載の分布帰還型半導
体レーザ。1. A periodic structure in which a refractive index fluctuation or a gain fluctuation is periodically formed between a guide layer and a cladding layer formed on one surface side of an active layer, and light is distributed and fed back. In a distributed feedback semiconductor laser in which a diffraction grating layer for obtaining oscillation is formed, a flat region without the periodic structure is provided only near an output end of the diffraction grating, and an output having the flat region is provided. A distribution in which a refractive index distribution in a direction perpendicular to the active layer in the vicinity of an end is symmetric about the active layer so that symmetry of the light intensity distribution in the vertical direction is compensated. Feedback semiconductor laser. 2. The distributed feedback semiconductor laser according to claim 1, wherein:
の製造方法であって、 予め光導波路層が作り込まれている半導体基板表面にレ
ジストを塗布し、所定部分を一定幅にわたって露光した
後、干渉露光法によって表面全体を干渉パターンで露光
する第１の工程と、 前記半導体基板表面を露光されたレジストを用いて現
像、エッチングし、回折格子の周期構造を有する領域と
該周期構造のない領域を形成する第２工程と、 前記部分的に回折格子の周期構造が形成された半導体基
板表面にクラッド層を形成し、出力端面を得るべく前記
周期構造のない領域において該半導体基板を積層方向に
切断するとともに、該出力端面と対向する端面を得るべ
く前記周期構造を有する領域において該半導体基板を積
層方向に切断する第３の工程を備えた分布帰還型半導体
レーザの製造方法。2. The method of manufacturing a distributed feedback semiconductor laser according to claim 1, wherein a resist is applied to a surface of the semiconductor substrate on which the optical waveguide layer has been formed in advance, and a predetermined portion is exposed over a predetermined width. A first step of exposing the entire surface to an interference pattern by an interference exposure method, and developing and etching the semiconductor substrate surface using the exposed resist, and a region having a periodic structure of the diffraction grating and no periodic structure. A second step of forming a region, a cladding layer is formed on a surface of the semiconductor substrate on which the periodic structure of the diffraction grating is partially formed, and the semiconductor substrate is stacked in a region without the periodic structure in order to obtain an output end face. And a third step of cutting the semiconductor substrate in the laminating direction in a region having the periodic structure so as to obtain an end face facing the output end face. Manufacturing method of feedback semiconductor laser.
の製造方法であって、 予め光導波路層が作り込まれている半導体基板表面にレ
ジストを塗布し、干渉露光法によって表面全体を干渉パ
ターンで露光し、該露光された格子状のレジストを用い
て現像、エッチングして回折格子の周期構造を形成する
第１の工程と、 前記回折格子の周期構造が形成された半導体基板表面の
うち、所定部分を一定幅にわたってエッチングし、該周
期構造をなくす第２の工程と、 前記部分的に回折格子の周期構造が形成された半導体基
板表面にクラッド層を形成し、出力端面を得るべく前記
周期構造のない領域において該半導体基板を積層方向に
切断するとともに、該出力端面と対向する端面を得るべ
く前記周期構造を有する領域において該半導体基板を積
層方向に切断する第３の工程を備えた分布帰還型半導体
レーザの製造方法。3. The method of manufacturing a distributed feedback semiconductor laser according to claim 1, wherein a resist is applied to the surface of the semiconductor substrate on which the optical waveguide layer has been formed in advance, and the entire surface is subjected to an interference pattern by an interference exposure method. A first step of forming a periodic structure of the diffraction grating by developing and etching using the exposed grid-like resist, of the semiconductor substrate surface on which the periodic structure of the diffraction grating is formed, A second step of etching a predetermined portion over a certain width to eliminate the periodic structure; and forming a clad layer on the surface of the semiconductor substrate on which the periodic structure of the diffraction grating is partially formed to obtain an output end face. Cutting the semiconductor substrate in the laminating direction in the region having no structure, and laminating the semiconductor substrate in the region having the periodic structure so as to obtain an end face facing the output end face. A method of manufacturing a distributed feedback semiconductor laser, comprising: a third step of cutting in a direction.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP01748993A JP3235627B2 (en) | 1993-02-04 | 1993-02-04 | Distributed feedback semiconductor laser and method of manufacturing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP01748993A JP3235627B2 (en) | 1993-02-04 | 1993-02-04 | Distributed feedback semiconductor laser and method of manufacturing the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH06232499A JPH06232499A (en) | 1994-08-19 |
| JP3235627B2 true JP3235627B2 (en) | 2001-12-04 |
Family
ID=11945423
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP01748993A Expired - Lifetime JP3235627B2 (en) | 1993-02-04 | 1993-02-04 | Distributed feedback semiconductor laser and method of manufacturing the same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3235627B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08160257A (en) * | 1994-10-07 | 1996-06-21 | Ricoh Co Ltd | Mounting structure for optical transmission module |
| JP6790364B2 (en) * | 2016-01-25 | 2020-11-25 | 三菱電機株式会社 | Optical semiconductor device |
-
1993
- 1993-02-04 JP JP01748993A patent/JP3235627B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH06232499A (en) | 1994-08-19 |
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