JP3222992B2 - Photovoltaic element - Google Patents
Photovoltaic elementInfo
- Publication number
- JP3222992B2 JP3222992B2 JP17636693A JP17636693A JP3222992B2 JP 3222992 B2 JP3222992 B2 JP 3222992B2 JP 17636693 A JP17636693 A JP 17636693A JP 17636693 A JP17636693 A JP 17636693A JP 3222992 B2 JP3222992 B2 JP 3222992B2
- Authority
- JP
- Japan
- Prior art keywords
- conductor
- light
- thin film
- semiconductor
- thickness
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/546—Polycrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
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- Photovoltaic Devices (AREA)
Description
【０００１】[0001]
【産業上の利用分野】この発明は光起電力素子に関し、
特にたとえば太陽電池や光センサなどに用いられる、光
起電力素子に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a photovoltaic device,
In particular, the present invention relates to a photovoltaic element used for, for example, a solar cell or an optical sensor.
【０００２】[0002]
【従来の技術】従来の光起電力素子の構造としては、Ｐ
型半導体／Ｎ型半導体構造，Ｐ型半導体／真性半導体／
Ｎ型半導体構造，透明電極／絶縁体／半導体構造等が用
いられていた。これらはいずれも、光発電のための光吸
収層は半導体であった。2. Description of the Related Art A conventional photovoltaic element has a structure of P
Semiconductor / N-type semiconductor structure, P-type semiconductor / intrinsic semiconductor /
N-type semiconductor structures, transparent electrodes / insulators / semiconductor structures, etc., have been used. In all of these, the light absorbing layer for photovoltaic power generation was a semiconductor.
【０００３】[0003]
【発明が解決しようとする課題】しかし、半導体は導電
体に比べて導電率が低いため、従来では光入射側に透明
電極または集電極を設ける必要があり、入射光の利用効
率を低下させたり素子構造を複雑にしていた。それゆえ
に、この発明の主たる目的は、簡単な構造で光電変換効
率を向上できる、光起電力素子を提供することである。However, since the conductivity of a semiconductor is lower than that of a conductor, it is conventionally necessary to provide a transparent electrode or a collecting electrode on the light incident side, and the utilization efficiency of incident light is reduced. The device structure was complicated. Therefore, a main object of the present invention is to provide a photovoltaic element that can improve photoelectric conversion efficiency with a simple structure.
【０００４】[0004]
【課題を解決するための手段】第１の発明は、光入射側
より、主に光吸収を呈する第１導電体、酸化物または窒
化物を含む絶縁体および第２導電体を積層して形成さ
れ、前記第１導電体の表面が光反射率を低減するような
凹凸形状に形成される、光起電力素子である。第２の発
明は、光入射側より、主に光吸収を呈する第１導電体、
半導体および第２導電体を積層して形成され、前記第１
導電体の表面が光反射率を低減するような凹凸形状に形
成される、光起電力素子である。According to a first aspect of the present invention, a first conductor which mainly absorbs light, an insulator containing oxide or nitride, and a second conductor are laminated from the light incident side. Wherein the surface of the first conductor reduces light reflectance.
This is a photovoltaic element formed in an uneven shape . The second invention is a first conductor mainly exhibiting light absorption from the light incident side,
The first and second conductors are formed by laminating a semiconductor and a second conductor .
The surface of the conductor is shaped into an uneven shape to reduce light reflectance
It is a photovoltaic element formed.
【０００５】[0005]
【作用】入射光は、光入射側の第１導電体で吸収され、
電子が励起される。光吸収の半分以上は第１導電体で行
われる。光を吸収するプロセスには、たとえば第１導電
体の自由電子のプラズマ振動による吸収や、自由電子や
内核電子の電子励起等が利用される。そして、第１導電
体中で励起された電子は、光から受け取った運動量，絶
縁体（または半導体）内部の電界，またはトンネル効果
等によって第２導電体に移動する。絶縁体（または半導
体）のバンドギャップと膜厚とは、電子の移動が起きや
すい値に設定される。また、第１導電体の仕事関数が、
第２導電体の仕事関数より大きいと、絶縁体（または半
導体）の内部には電子の移動を助ける方向に電界が生じ
るので、より効果的である。そして、第２導電体に到達
した電子は、電荷中性を満たすために、外部負荷を通っ
て第１導電体に戻る。すなわち光起電力が生じる。The incident light is absorbed by the first conductor on the light incident side,
The electrons are excited. More than half of the light absorption is performed by the first conductor. In the process of absorbing light, for example, absorption of free electrons of the first conductor by plasma oscillation, electronic excitation of free electrons and inner core electrons, and the like are used. The electrons excited in the first conductor move to the second conductor due to momentum received from light, an electric field inside the insulator (or semiconductor), a tunnel effect, or the like. The band gap and the film thickness of the insulator (or the semiconductor) are set to values at which electrons easily move. The work function of the first conductor is
When the work function is larger than the work function of the second conductor, an electric field is generated inside the insulator (or semiconductor) in a direction that facilitates electron transfer, which is more effective. Then, the electrons that have reached the second conductor return to the first conductor through an external load to satisfy charge neutrality. That is, photovoltaic power is generated.
【０００６】[0006]
【発明の効果】この発明によれば、光吸収層として、半
導体より導電率が高い導電体を用いることで、光入射側
に特に透明電極や集電極を設ける必要がなくなる。した
がって、簡単な構造で光電変換効率が高い光起電力素子
が得られる。この発明の上述の目的，その他の目的，特
徴および利点は、図面を参照して行う以下の実施例の詳
細な説明から一層明らかとなろう。According to the present invention, by using a conductor having higher conductivity than a semiconductor as the light absorbing layer, it is not necessary to particularly provide a transparent electrode or a collecting electrode on the light incident side. Therefore, a photovoltaic element having a high photoelectric conversion efficiency with a simple structure can be obtained. The above and other objects, features and advantages of the present invention will become more apparent from the following detailed description of embodiments with reference to the drawings.
【０００７】[0007]
【実施例】図１を参照して、この実施例の光起電力素子
１０はガラス基板１２を含む。ガラス基板１２上には、
たとえば膜厚５００Åのニッケルからなる薄膜導電体１
４，たとえば膜厚５０Åの炭化シリコンからなる薄膜半
導体１６，およびたとえば膜厚２００００ÅのＡｌから
なる薄膜導電体１８が、たとえば真空蒸着やスパッタリ
ング等によって順に積層形成される。入射光は、矢印Ａ
に示すように、ガラス基板１２側から与えられ、光起電
力は、薄膜導電体１８上に形成される端子２０と薄膜導
電体１４上に形成される端子２２とを通じて取り出され
る。Referring to FIG. 1, a photovoltaic element 10 of this embodiment includes a glass substrate 12. On the glass substrate 12,
For example, a thin film conductor 1 made of nickel having a thickness of 500 °
4. A thin film semiconductor 16 made of silicon carbide having a thickness of, for example, 50 ° and a thin film conductor 18 made of Al having a thickness of, for example, 20,000 ° are sequentially laminated by, for example, vacuum deposition or sputtering. Incident light is indicated by arrow A
As shown in FIG. 5, the photoelectromotive force applied from the glass substrate 12 side is extracted through a terminal 20 formed on the thin-film conductor 18 and a terminal 22 formed on the thin-film conductor 14.
【０００８】このように構成される光起電力素子１０に
おいて、入射光は薄膜導電体１４で吸収され、電子が励
起される。光吸収の半分以上は薄膜導電体１４で行われ
る。光を吸収するプロセスには、たとえば薄膜導電体１
４の電子のプラズマ振動による吸収や、自由電子や内核
電子の電子励起等が利用される。薄膜導電体１４中で励
起された電子は、光から受け取った運動量，薄膜半導体
１６内部の電界，またはトンネル効果等によって薄膜導
電体１８に移動する。薄膜半導体１６のバンドギャップ
と膜厚とは、電子の移動が起きやすい値に設計される。
後述するように膜厚は、１００Å程度が最適となる。ま
た、薄膜導電体１４の仕事関数が、薄膜導電体１８の仕
事関数より大きいと、薄膜半導体１６の内部には電子の
移動を助ける方向に電界が生じるので、より効果的であ
る。そして、薄膜導電体１８に到達した電子は、端子２
０，外部負荷（図示せず）および端子２２を通って、薄
膜導電体１４に戻る。すなわち光起電力が生じる。[0008] In the photovoltaic element 10 configured as described above, incident light is absorbed by the thin film conductor 14 and electrons are excited. More than half of the light absorption is performed by the thin film conductor 14. The process of absorbing light includes, for example, a thin-film conductor 1
For example, absorption of electrons of No. 4 by plasma oscillation, and electronic excitation of free electrons and inner core electrons are used. The electrons excited in the thin-film conductor 14 move to the thin-film conductor 18 due to momentum received from light, an electric field inside the thin-film semiconductor 16, or a tunnel effect. The band gap and the film thickness of the thin film semiconductor 16 are designed to have values at which electrons easily move.
As described later, the optimum film thickness is about 100 °. When the work function of the thin film conductor 14 is larger than the work function of the thin film conductor 18, an electric field is generated inside the thin film semiconductor 16 in a direction that facilitates the movement of electrons, which is more effective. Then, the electrons that have reached the thin-film conductor 18 are
0, through the external load (not shown) and the terminal 22, returning to the thin film conductor 14. That is, photovoltaic power is generated.
【０００９】この光起電力素子１０によれば、波長４０
０ｎｍの入射光に対する光電変換効率は、炭化シリコン
からなる薄膜半導体１６の膜厚によって図２のように変
化し、膜厚が１００Å程度のときに最適であった。この
とき、光電変換効率も１０％以上と高い値が得られた。
この薄膜半導体１６の膜厚が、１０Åよりも小さいとき
または２００Åを超えたとき、光起電力は生じなかっ
た。したがって、薄膜半導体１６の膜厚は、１０Å以上
２００Å以下に設定され得る。According to the photovoltaic element 10, the wavelength 40
The photoelectric conversion efficiency with respect to the incident light of 0 nm changes as shown in FIG. 2 depending on the film thickness of the thin film semiconductor 16 made of silicon carbide, and was optimal when the film thickness was about 100 °. At this time, the photoelectric conversion efficiency was as high as 10% or more.
When the thickness of the thin film semiconductor 16 was smaller than 10 ° or exceeded 200 °, no photovoltaic power was generated. Therefore, the film thickness of the thin film semiconductor 16 can be set to 10 ° or more and 200 ° or less.
【００１０】また、この実施例によれば、ガラス基板／
薄膜導電体／薄膜半導体／薄膜導電体という単純な構造
の光起電力素子１０が得られる。形成プロセスも、たと
えばスパッタリング等を用いてインライン化でき、簡単
になる。なお、薄膜導電体１４および１８の材質は、上
述のようなニッケルやＡｌに限らず、光を吸収する導電
体であれば足りる。また、光反射率を低減するような無
反射コートを、薄膜導電体１４の光入射側表面や薄膜導
電体１４と薄膜半導体１６との界面に形成してもよい。
さらに、薄膜導電体１４の表面を、光反射率を低減する
ような凹凸形状に形成してもよい。According to this embodiment, the glass substrate /
The photovoltaic element 10 having a simple structure of thin film conductor / thin film semiconductor / thin film conductor is obtained. The forming process can also be made inline by using, for example, sputtering or the like, and is simplified. Note that the material of the thin film conductors 14 and 18 is not limited to nickel and Al as described above, and any conductor that absorbs light is sufficient. Further, a non-reflection coating for reducing the light reflectance may be formed on the light incident side surface of the thin film conductor 14 or at the interface between the thin film conductor 14 and the thin film semiconductor 16.
Further, the surface of the thin-film conductor 14 may be formed in a concavo-convex shape so as to reduce the light reflectance.
【００１１】図３を参照して、他の実施例の光起電力素
子３０は、ガラス基板３２を含む。ガラス基板３２上に
は、たとえば膜厚２ミクロンの酸化錫からなる薄膜３
４，たとえば膜厚３０ÅのＰｔからなる薄膜導電体３
６，たとえば膜厚５０Åの非晶質窒化シリコンからなる
薄膜絶縁体３８，およびたとえば膜厚１００００ÅのＡ
ｌからなる薄膜導電体４０が、たとえば熱ＣＶＤ，スパ
ッタリング等によって順に積層形成される。薄膜３４
は、光反射率を低減させるために、深さ０．０５〜１ミ
クロン程度の凹凸を有するテクスチャ構造に形成され
る。したがって、薄膜導電体３６の一方主面は凹凸形状
に形成される。また、薄膜絶縁体３８の膜厚は、１０Å
以上２００Å以下に設定され得る。入射光は、矢印Ｂに
示すように、ガラス基板３２側から与えられ、光起電力
は、薄膜導電体４０上に形成される端子４２と薄膜導電
体３６上に形成される端子４４とを通じて取り出され
る。Referring to FIG. 3, a photovoltaic element 30 of another embodiment includes a glass substrate 32. On the glass substrate 32, a thin film 3 of tin oxide having a thickness of, for example, 2 μm is formed.
4, a thin-film conductor 3 made of Pt having a thickness of, for example, 30 °
6, a thin film insulator 38 of amorphous silicon nitride having a thickness of, for example, 50 °
The thin film conductors 40 made of l are sequentially laminated by, for example, thermal CVD, sputtering or the like. Thin film 34
Is formed in a texture structure having irregularities with a depth of about 0.05 to 1 micron in order to reduce the light reflectance. Therefore, one main surface of the thin film conductor 36 is formed in an uneven shape. The thickness of the thin film insulator 38 is 10 °
It can be set to more than 200 °. The incident light is given from the glass substrate 32 side as shown by the arrow B, and the photovoltaic power is extracted through a terminal 42 formed on the thin film conductor 40 and a terminal 44 formed on the thin film conductor 36. It is.
【００１２】この実施例によれば、ガラス基板３２と薄
膜導電体３６との間にテクスチャ構造を持つ薄膜３４を
挿入することによって、ガラス基板３２と薄膜３４との
間の光反射率を低減して光の利用効率を高めることがで
きる。また、この実施例では、薄膜３４は高い導電性を
持つ必要がないので、キャリア数が少なく光透過率の高
い酸化錫を薄膜３４に用いることができる。したがっ
て、薄膜３４による光吸収ロスがない。According to this embodiment, the light reflectance between the glass substrate 32 and the thin film 34 is reduced by inserting the thin film 34 having a texture structure between the glass substrate 32 and the thin film conductor 36. Light usage efficiency can be improved. In this embodiment, since the thin film 34 does not need to have high conductivity, tin oxide having a small number of carriers and high light transmittance can be used for the thin film 34. Therefore, there is no light absorption loss due to the thin film 34.
【００１３】図４を参照して、他の実施例の光起電力素
子５０は、ステンレスなどからなる金属基板５２を含
む。金属基板５２上には、たとえば膜厚１００Åの非晶
質酸化シリコンからなる薄膜絶縁体５４，およびたとえ
ば膜厚７００Åのタングステンからなる薄膜導電体５６
が、たとえば真空蒸着やスパッタリング等で順に積層形
成される。薄膜絶縁体５４の膜厚は、１０Å以上２００
Å以下に設定され得る。入射光は、矢印Ｃに示すよう
に、ステンレス基板５２側から与えられ、光起電力は、
薄膜導電体５６上に形成される端子５８と金属基板５２
上に形成される端子６０とを通じて取り出される。すな
わち、この実施例の場合も、光起電力素子１０の構成要
素であるステンレス基板５２および薄膜導電体５６を取
り出し電極として利用できる。Referring to FIG. 4, a photovoltaic element 50 of another embodiment includes a metal substrate 52 made of stainless steel or the like. On metal substrate 52, a thin-film insulator 54 made of, for example, amorphous silicon oxide having a thickness of 100 ° and a thin-film conductor 56 made of, for example, tungsten having a thickness of 700 ° are formed.
Are sequentially laminated by, for example, vacuum evaporation or sputtering. The film thickness of the thin-film insulator 54 is 10 ° or more and 200
得 る Can be set to: The incident light is given from the stainless steel substrate 52 side as shown by arrow C, and the photovoltaic power is
Terminal 58 formed on thin-film conductor 56 and metal substrate 52
It is taken out through the terminal 60 formed above. That is, also in the case of this embodiment, the stainless steel substrate 52 and the thin-film conductor 56, which are the components of the photovoltaic element 10, can be used as extraction electrodes.
【００１４】この実施例のように、基板として金属基板
５２を用いると構造はさらに単純になる。なお、光の反
射によるロスを少なくするために、金属基板５２を凹凸
加工してもよい。これらの実施例の光起電力素子を、太
陽電池に用いれば、安価，大面積化に適し、高効率化が
可能となる。また、光センサとして用いれば、安価，大
面積化に適し、超高速応答が可能となる。When the metal substrate 52 is used as the substrate as in this embodiment, the structure is further simplified. In addition, in order to reduce the loss due to the reflection of light, the metal substrate 52 may be subjected to uneven processing. If the photovoltaic elements of these embodiments are used in a solar cell, it is suitable for inexpensive, large-area, and high-efficiency. Also, when used as an optical sensor, it is suitable for inexpensive, large-area, and ultra-high-speed response.
【図１】この発明の一実施例を示す断面図である。FIG. 1 is a sectional view showing an embodiment of the present invention.
【図２】図１実施例における薄膜半導体（炭化シリコ
ン）の膜厚に対する光電変換効率特性を示すグラフであ
る。FIG. 2 is a graph showing photoelectric conversion efficiency characteristics with respect to the thickness of a thin film semiconductor (silicon carbide) in the embodiment of FIG.
【図３】この発明の他の実施例を示す断面図である。FIG. 3 is a sectional view showing another embodiment of the present invention.
【図４】この発明のその他の実施例を示す断面図であ
る。FIG. 4 is a cross-sectional view showing another embodiment of the present invention.
１０，３０，５０ …光起電力素子 １２，３２ …ガラス基板 １４，１８，３６，４０，５６ …薄膜導電体 １６ …薄膜半導体 ２０，２２，４２，４４，５８，６０ …端子 ３４ …薄膜 ３８，５４ …薄膜絶縁体 ５２ …金属基板 10, 30, 50 photovoltaic elements 12, 32 glass substrates 14, 18, 36, 40, 56 thin film conductors 16 thin film semiconductors 20, 22, 42, 44, 58, 60 terminals 34 thin films 38 , 54 ... thin film insulator 52 ... metal substrate
───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 昭62−222678（ＪＰ，Ａ) 特開 昭57−13777（ＪＰ，Ａ) 特開 平１−214078（ＪＰ，Ａ) 特開 昭61−2374（ＪＰ，Ａ) 特開 昭55−26623（ＪＰ，Ａ) 特開 昭53−110393（ＪＰ，Ａ) 特開 昭58−96780（ＪＰ，Ａ) (58)調査した分野(Int.Cl.7，ＤＢ名) H01L 31/00 - 31/119 H01L 49/00 - 49/02 ──────────────────────────────────────────────────続 き Continuation of the front page (56) References JP-A-62-222678 (JP, A) JP-A-57-13777 (JP, A) JP-A 1-214078 (JP, A) JP-A 61-222 2374 (JP, A) JP-A-55-26623 (JP, A) JP-A-53-110393 (JP, A) JP-A-58-96780 (JP, A) (58) Fields investigated (Int. 7 , DB name) H01L 31/00-31/119 H01L 49/00-49/02
Claims (6)
電体、酸化物または窒化物を含む絶縁体および第２導電
体を積層して形成され、前記第１導電体の表面が光反射
率を低減するような凹凸形状に形成される、光起電力素
子。1. A light emitting device comprising: a first conductor which mainly absorbs light; an insulator containing an oxide or a nitride; and a second conductor which are laminated from the light incident side , wherein the surface of the first conductor is formed. Light reflection
A photovoltaic element formed in a concavo-convex shape that reduces the efficiency.
電体、半導体および第２導電体を積層して形成され、前
記第１導電体の表面が光反射率を低減するような凹凸形
状に形成される、光起電力素子。A first conductor, a semiconductor, and a second conductor which mainly absorb light from the light incident side are formed by lamination ;
The surface of the first conductor has an irregular shape such that the light reflectance is reduced.
A photovoltaic element formed in a shape .
下に設定される、請求項１記載の光起電力素子。3. The photovoltaic device according to claim 1, wherein said insulator has a thickness of not less than 10 ° and not more than 200 °.
下に設定される、請求項２記載の光起電力素子。4. The photovoltaic device according to claim 2, wherein said semiconductor has a thickness of not less than 10 ° and not more than 200 °.
れる、請求項１または２記載の光起電力素子。5. The photovoltaic device according to claim 1, wherein at least half of light absorption is performed by said first conductor.
体の仕事関数よりも大きい、請求項１または２記載の光
起電力素子。6. The photovoltaic device according to claim 1, wherein a work function of the first conductor is larger than a work function of the second conductor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17636693A JP3222992B2 (en) | 1993-07-16 | 1993-07-16 | Photovoltaic element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17636693A JP3222992B2 (en) | 1993-07-16 | 1993-07-16 | Photovoltaic element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0738127A JPH0738127A (en) | 1995-02-07 |
| JP3222992B2 true JP3222992B2 (en) | 2001-10-29 |
Family
ID=16012369
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17636693A Expired - Lifetime JP3222992B2 (en) | 1993-07-16 | 1993-07-16 | Photovoltaic element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3222992B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0974216A (en) * | 1995-09-07 | 1997-03-18 | Nippon Shokubai Co Ltd | Organic solar battery |
-
1993
- 1993-07-16 JP JP17636693A patent/JP3222992B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0738127A (en) | 1995-02-07 |
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