JP3218906B2 - Thermistor element - Google Patents
Thermistor elementInfo
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- JP3218906B2 JP3218906B2 JP03826895A JP3826895A JP3218906B2 JP 3218906 B2 JP3218906 B2 JP 3218906B2 JP 03826895 A JP03826895 A JP 03826895A JP 3826895 A JP3826895 A JP 3826895A JP 3218906 B2 JP3218906 B2 JP 3218906B2
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- thermistor
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Description
【０００１】[0001]
【産業上の利用分野】本発明はサーミスタ素子に係り、
特に、サーミスタを使用した温度センサ用のサーミスタ
素子の改良に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thermistor element,
In particular, it relates to an improvement of a thermistor element for a temperature sensor using a thermistor.
【０００２】[0002]
【従来の技術】従来、温度センサ用のサーミスタ素子と
して、遷移金属酸化物を主成分とする焼結体よりなる負
特性サーミスタ素体の端面に電極を形成してなるものが
ある。このサーミスタ素子の電極形成方法としては、ペ
ースト状の電極形成材料をサーミスタ素体に対してスク
リーン印刷等により塗布し、これを適当な温度で焼成す
るのが一般的である。なお、電極形成材料は、ＭｎＮｉ
系又はＭｎＮｉＣｏ系などのサーミスタ素体の構成材料
や、当該サーミスタ素子の用途によって使い分けられて
いるが、一般的には、電極機能を奏する金属粉に、サー
ミスタ素体との接合性を高めるためにガラスフリットや
酸化ビスマス等のビスマス化合物を添加した無機物にペ
ースト化するための有機ビヒクルを混合した電極ペース
トが使用されている。2. Description of the Related Art Conventionally, as a thermistor element for a temperature sensor, there is a thermistor element formed by forming an electrode on an end face of a negative characteristic thermistor element made of a sintered body containing a transition metal oxide as a main component. As a method of forming an electrode of the thermistor element, it is common to apply a paste-like electrode forming material to a thermistor body by screen printing or the like and bake it at an appropriate temperature. The electrode forming material was MnNi.
Or the MnNiCo-based thermistor element or the like, and depending on the purpose of the thermistor element, is generally used depending on the purpose, the metal powder having an electrode function, in order to enhance the bonding with the thermistor element An electrode paste in which an organic vehicle for forming a paste into an inorganic substance to which a bismuth compound such as glass frit or bismuth oxide is added is used.
【０００３】[0003]
【発明が解決しようとする課題】従来の電極形成材料を
用いて電極を形成したサーミスタ素子、特に、ＭｎＣｏ
Ｆｅ系材料で構成されるサーミスタ素体を用いたものに
ついては、電極の素体に対する接着強度が十分ではな
く、また、高温度雰囲気中で長時間使用した場合、抵抗
値の経時変化率が大きく、信頼性が低いという問題があ
った。SUMMARY OF THE INVENTION A thermistor element in which an electrode is formed using a conventional electrode forming material, in particular, MnCo
In the case of using a thermistor element composed of an Fe-based material, the adhesive strength of the electrode to the element element is not sufficient, and when used for a long time in a high-temperature atmosphere, the rate of change of the resistance value with time is large. However, there is a problem that reliability is low.
【０００４】本発明は上記従来の問題点を解決し、素体
に対する電極の接着強度が高く、高温度雰囲気中にて長
時間使用した場合においても、抵抗値の経時変化率が小
さく、信頼性の高いサーミスタ素子を提供することを目
的とする。The present invention solves the above-mentioned conventional problems, has a high adhesive strength of the electrode to the element body, has a small rate of change in resistance with time even when used in a high-temperature atmosphere for a long time, and has a high reliability. It is intended to provide a thermistor element having a high value.
【０００５】[0005]
【課題を解決するための手段】本発明のサーミスタ素子
は、遷移金属酸化物を主成分とする焼結体よりなる負特
性サーミスタ素体に、Ａｇ，Ａｕ又はＰｔを主成分とす
る貴金属電極を形成してなるサーミスタ素子において、
電極形成材料が銅及び／又は銅化合物を含有し、銅及び
／又は銅化合物の含有量が電極形成材料中の無機物含有
量の２０重量％以下であることを特徴とする。The thermistor element of the present invention comprises a negative characteristic thermistor element made of a sintered body containing a transition metal oxide as a main component and containing Ag, Au or Pt as a main component.
Thermistor element formed by forming a noble metal electrode
The electrode forming material contains copper and / or a copper compound, and the content of copper and / or the copper compound is 20% by weight or less of the inorganic content in the electrode forming material.
【０００６】請求項２のサーミスタ素子は、請求項１に
記載のサーミスタ素子において、サーミスタ素体は、Ｍ
ｎ，Ｃｏ及びＦｅの酸化物を主成分とする焼結体よりな
ることを特徴とする。[0006] The thermistor element 請 Motomeko 2, in the thermistor element <br/> claim 1, the thermistor element is, M
It is characterized by being made of a sintered body mainly composed of oxides of n, Co and Fe.
【０００７】以下に本発明を詳細に説明する。Hereinafter, the present invention will be described in detail.
【０００８】本発明において、電極形成材料中に銅化合
物を含有させる場合、銅化合物原料としては、ＣｕＯ，
Ｃｕ２Ｏ，ＣｕＯ・Ｆｅ２Ｏ3 ，Ｃｕ２Ａｌ２Ｏ４など
の銅酸化物や炭酸銅などの粉末を用いることができる。
また、銅を含有させる場合には、Ｃｕ粉末或いは銅と貴
金属との合金、例えばＡｇ／Ｃｕ粉末などを用いること
ができる。In the present invention, when a copper compound is contained in the electrode forming material, CuO,
Cu 2 O, may be used a powder of copper oxide or copper carbonate, such as CuO · Fe 2 O3, Cu 2 Al 2 O 4.
When copper is contained, Cu powder or an alloy of copper and a noble metal, for example, Ag / Cu powder can be used.
【０００９】本発明に係る電極形成材料は、銅及び／又
は銅化合物を、空気中で焼成可能なＡｇ，Ａｕ又はＰｔ
を主成分とする貴金属粉末に、接合強度を得るためのガ
ラスフリットと共に混合し、更に有機ビヒクルを添加し
てペースト状とすることにより容易に調製することがで
きる。[0009] The electrode forming material according to the present invention is obtained by sintering copper and / or a copper compound in air, Ag, Au or Pt.
Can be easily prepared by mixing a noble metal powder containing as a main component with a glass frit for obtaining bonding strength and further adding an organic vehicle to form a paste.
【００１０】この場合、銅及び／又は銅化合物はその割
合が少な過ぎると、銅成分を配合したことによる本発明
の改良効果が十分に得られず、逆に多過ぎて、形成され
る電極中の含有量が２０重量％を超えるようになると、
電極表面に銅による酸化物が表出し、電極に対するはん
だ付け性が低下する。このため、銅及び／又は銅化合物
は、電極形成材料の無機物含有量の２０重量％以下、好
ましくは１〜１０重量％とし、得られる電極中の含有量
が２０重量％以下、好ましくは１〜１０重量％となるよ
うに配合する。 In this case, if the proportion of copper and / or copper compound is too small, the improvement effect of the present invention obtained by blending the copper component cannot be sufficiently obtained. When the content of exceeds 20% by weight,
Oxide due to copper is exposed on the electrode surface, and solderability to the electrode is reduced. For this reason, copper and / or a copper compound is preferably 20% by weight or less of the inorganic content of the electrode forming material.
Mashiku is 1 to 10 wt%, content of 20 wt% in the resulting electrode or less, preferably you blended so that 1 to 10 wt%.
【００１１】なお、電極形成材料中の無機物成分のう
ち、Ａｇ等の貴金属の含有量は６０〜９５重量％、ガラ
スフリットの含有量は１〜１５重量％とするのが好まし
い。It is preferable that, of the inorganic components in the electrode forming material, the content of a noble metal such as Ag is 60 to 95% by weight, and the content of the glass frit is 1 to 15% by weight.
【００１２】一方、本発明のサーミスタ素子において、
サーミスタ素体を構成する遷移金属酸化物を主成分とす
る焼結体の遷移金属酸化物としては、一般に、Ｍｎ，Ｃ
ｏ及びＦｅの酸化物を、Ｍｎ：Ｃｏ：Ｆｅ＝０〜６０：
０〜７０：０〜７０（原子モル％）の割合で含むものが
採用される。On the other hand, in the thermistor element of the present invention,
As a transition metal oxide of a sintered body mainly composed of a transition metal oxide constituting a thermistor body, Mn, C
O and Fe oxides are represented by Mn: Co: Fe = 0 to 60:
Those containing at a ratio of 0 to 70: 0 to 70 (atomic mol%) are employed.
【００１３】本発明のサーミスタ素子は、前記組成の電
極形成材料をＭｎＣｏＦｅ系サーミスタ素体の端面にス
クリーン印刷等により塗布した後、空気中にて、７００
〜８００℃の温度で５〜１０分程度焼き付けて電極を形
成することにより、容易に作製される。The thermistor element of the present invention is obtained by applying an electrode forming material having the above-mentioned composition to an end surface of a MnCoFe-based thermistor body by screen printing or the like, and then applying the same in air to 700 m.
It is easily manufactured by baking at a temperature of about 800 ° C. for about 5 to 10 minutes to form an electrode.
【００１４】得られたサーミスタ素子は、電極の接合強
度が高く、しかも、高温度雰囲気中での長時間使用にお
いても抵抗値の経時変化率が小さいことから、温度セン
サ用サーミスタ素子等として、工業的に極めて有用であ
る。The obtained thermistor element has a high electrode bonding strength and a small rate of change in resistance over time even in a long-time use in a high-temperature atmosphere. Is extremely useful.
【００１５】[0015]
【作用】銅及び銅化合物は、サーミスタ素体を構成する
遷移金属酸化物、特にＭｎ，Ｃｏ，Ｆｅ等の元素と化合
物（スピネル系）を容易に形成することができ、また、
貴金属元素、特にＡｇ，Ａｕ等と合金化しやすい。この
ため、本発明の構成とすることにより、電極中に含有さ
れる銅成分が電極とサーミスタ素体との界面近傍に遍在
し、化学的結合により電極付着強度を高めると共に、高
温度雰囲気中で長時間使用した場合にも抵抗値経時変化
率を小さいものとして信頼性を高めることができる。The copper and the copper compound can easily form a transition metal oxide constituting the thermistor body, particularly a compound (spinel type) with elements such as Mn, Co, and Fe.
It is easy to alloy with noble metal elements, especially Ag, Au and the like. For this reason, by adopting the configuration of the present invention, the copper component contained in the electrode is ubiquitous in the vicinity of the interface between the electrode and the thermistor element, thereby increasing the electrode adhesion strength by chemical bonding and increasing the temperature in a high-temperature atmosphere. Therefore, even when the device is used for a long time, the rate of change of the resistance value with time can be reduced to enhance the reliability.
【００１６】特に、本発明において、銅成分として銅或
いは銅合金を用いた場合には、貴金属との合金効果が得
易くなると共に、大気焼成により酸化してサーミスタ素
体との界面近傍に複合酸化物を形成し、電極との接合効
果を高めるという作用効果が得られる。Particularly, in the present invention, when copper or a copper alloy is used as the copper component, an alloy effect with the noble metal is easily obtained, and the composite oxide is oxidized by baking in the air to form a composite oxide near the interface with the thermistor body. The effect of forming an object and enhancing the effect of bonding with the electrode can be obtained.
【００１７】また、銅成分として銅化合物を用いた場合
には、サーミスタ素体との界面近傍に複合酸化物を安定
して形成し易く、化学的結合力が大きく、かつ、その接
合力にばらつきが少なくなるという作用効果が得られ
る。Further, when a copper compound is used as the copper component, a composite oxide is easily formed stably near the interface with the thermistor body, the chemical bonding strength is large, and the bonding strength varies. Is obtained.
【００１８】[0018]
【実施例】以下に実施例を挙げて本発明をより具体的に
説明する。The present invention will be described more specifically with reference to the following examples.
【００１９】実施例１ まず、市販のＭｎ，Ｃｏ，Ｆｅの各金属酸化物をＭｎ：
Ｃｏ：Ｆｅ＝１０：５０：４０（原子％）の組成比にな
るように配合し、ボールミルで湿式混合した後、スラリ
ーを乾燥した。その後、９００℃の温度で仮焼し、この
仮焼粉をボールミルで再び湿式粉砕を行った後、そのス
ラリーを乾燥させた。次いで、ポリビニルアルコールを
バインダーとして添加混合し、所要量分取してブロック
状に加圧成形したものを１２００℃で５時間焼成した。
このブロックから厚さ０．２５ｍｍのウェハをスライス
し、これに電極を形成した後、０．７ｍｍ×０．７ｍｍ
のチップ状に切断した。Example 1 First, commercially available metal oxides of Mn, Co, and Fe were converted to Mn:
Co: Fe = 10: 50: 40 (atomic%) was blended so as to have a composition ratio, and the mixture was wet-mixed with a ball mill, and then the slurry was dried. Thereafter, the powder was calcined at a temperature of 900 ° C., and the calcined powder was again wet-pulverized by a ball mill, and then the slurry was dried. Next, polyvinyl alcohol was added and mixed as a binder, a required amount was fractionated, and a block-shaped pressure-formed product was fired at 1200 ° C. for 5 hours.
After slicing a 0.25 mm thick wafer from this block and forming electrodes on it, 0.7 mm x 0.7 mm
And cut into chips.
【００２０】電極形成材料には、Ａｇ粉末と有機ビヒク
ルを混合したＡｇペースト中にガラスフリットと、電極
形成材料中の無機物含有量に対するＣｕＯ含有率が、重
量％で１％（No. １），２％（No. ２），５％（No.
３），１０％（No. ４）となるようにＣｕＯ粉末を添加
したものを用いた。また、比較のため、ＣｕＯ粉末を含
まないもの（No. ５）、或いは、ＣｕＯの代りにＢｉ２
Ｏ３を重量％で１％（No. ６），５％（No. ７）含有す
るものを用いた。なお、ガラスフリットにはホウ珪酸鉛
系のガラスを用い、その含有量を８重量％とした。The electrode forming material includes a glass frit in an Ag paste obtained by mixing an Ag powder and an organic vehicle, and an electrode paste.
The CuO content relative to the inorganic content in the forming material was 1% (No. 1), 2% (No. 2), and 5% (No.
3) The one to which CuO powder was added so as to be 10% (No. 4) was used. Also, for comparison, a sample containing no CuO powder (No. 5) or Bi 2 instead of CuO was used.
O 3 1% by weight percent (No. 6), 5% (No. 7) was used containing. Note that lead borosilicate glass was used for the glass frit, and the content was 8% by weight.
【００２１】これらの電極形成材料を上記チップに各々
塗布及び乾燥した後、７２０℃の温度で１０分焼き付け
て電極を形成した。Each of these electrode forming materials was applied to the above chips and dried, and then baked at a temperature of 720 ° C. for 10 minutes to form electrodes.
【００２２】このようにして作製された各々のサーミス
タ素子に、はんだ付けによりリード線を接着して電極の
サーミスタ素体に対する接着強度を引張強度試験により
測定し、結果を図１に示した。A lead wire was bonded to each of the thermistor elements thus manufactured by soldering, and the bonding strength of the electrode to the thermistor element was measured by a tensile strength test. The results are shown in FIG.
【００２３】図１の結果から、電極中に銅化合物を含有
する本発明のサーミスタ素子は、従来のビスマス又はビ
スマス化合物を含有するものよりも２倍近く高い接合強
度を持つことが分かる。From the results shown in FIG. 1, it can be seen that the thermistor element of the present invention containing a copper compound in the electrode has a bonding strength almost twice as high as that of a conventional element containing bismuth or a bismuth compound.
【００２４】また、同様の素子にはんだ付けによりリー
ド線を接着し、その上から樹脂モールドを施し、温度セ
ンサ素子を作製した。これらを１００℃の高温度雰囲気
中に放置した場合の抵抗値の経時変化率を調べ、結果を
図２〜８に示した。Further, a lead wire was bonded to the same element by soldering, and a resin mold was applied thereon, thereby producing a temperature sensor element. When these were left in a high-temperature atmosphere of 100 ° C., the rate of change in resistance over time was examined. The results are shown in FIGS.
【００２５】図２〜８より、本発明の素子は従来の素子
に比べて、高温度雰囲気中に放置したときの抵抗値経時
変化率が小さく、信頼性に優れていることが分かる。特
に、ＣｕＯを５重量％添加したものは、従来のものに比
べると、抵抗値経時変化率が２０分の１以下と極めて良
好な結果が得られた。なお、これらの素子は、いずれも
サーミスタ材料本来の抵抗率、Ｂ定数などの電気的特性
を示した。2 to 8, it can be seen that the device of the present invention has a smaller rate of change with time in resistance value when left in a high-temperature atmosphere and is more excellent in reliability than the conventional device. In particular, when CuO was added in an amount of 5% by weight, a very good result was obtained, in which the rate of change of the resistance value with time was 1/20 or less as compared with the conventional one. Note that each of these elements exhibited electrical characteristics such as the resistivity and the B constant inherent to the thermistor material.
【００２６】更に、ＣｕＯを無機物含有量に対して２重
量％含有する電極形成材料を用いて作製した素子におい
て、素体と電極との界面付近の断面に対して、エネルギ
ー分散型Ｘ線分析装置を用いて元素分析を行った結果を
図９に示す。この元素分析は、ある領域内で、ある特定
元素が、重量％でどのくらいの割合で含有されているか
を測定したものである。図９より、電極中の銅成分は、
電極と素体との界面付近に遍在していることが分かる。Further, in a device manufactured using an electrode forming material containing 2% by weight of CuO with respect to the inorganic content , an energy dispersive X-ray analyzer is used for a cross section near the interface between the element body and the electrode. FIG. 9 shows the results of elemental analysis performed using. This elemental analysis measures the percentage by weight of a specific element contained in a certain region. From FIG. 9, the copper component in the electrode is:
It can be seen that it is ubiquitous near the interface between the electrode and the element.
【００２７】実施例２ 実施例１において、電極形成材料として、ＣｕＯの代り
にＣｕ粉末を表１に示す割合で含有するものを用いたこ
と以外は同様にしてサーミスタ素子を作製し、得られた
サーミスタ素子の電極の接着強度及び１００℃の高温度
雰囲気中で１０００時間放置した場合の抵抗値の変化率
を調べ、結果を表１に示した。なお、表１には、Ｃｕ無
添加のもの（実施例１のNo. ５）の結果も併記した。Example 2 A thermistor element was prepared and obtained in the same manner as in Example 1, except that a material containing Cu powder in the ratio shown in Table 1 was used instead of CuO as an electrode forming material. The adhesive strength of the electrodes of the thermistor element and the rate of change of the resistance value when left in an atmosphere at a high temperature of 100 ° C. for 1000 hours were examined. The results are shown in Table 1. Table 1 also shows the results for the case where no Cu was added (No. 5 of Example 1).
【００２８】[0028]
【表１】 [Table 1]
【００２９】実施例３ 実施例１において、電極材料として、ＣｕＯと更にＣｕ
を表２に示す割合で含有するものを用いたこと以外は同
様にしてサーミスタ素子を作製し、得られたサーミスタ
素子の電極の接着強度及び１００℃の高温度雰囲気中で
１０００時間放置した場合の抵抗値の変化率を調べ、結
果を表２に示した。なお、表２には、Ｃｕ無添加のもの
（実施例１のNo. ５）の結果も併記した。Example 3 In Example 1, CuO and further Cu were used as electrode materials.
Was prepared in the same manner except that the element containing the thermistor at the ratio shown in Table 2 was used, and the adhesive strength of the electrode of the obtained thermistor element and the case where the electrode was left for 1000 hours in a high-temperature atmosphere of 100 ° C. The rate of change of the resistance value was examined, and the results are shown in Table 2. Table 2 also shows the results for the case where no Cu was added (No. 5 of Example 1).
【００３０】[0030]
【表２】 [Table 2]
【００３１】表１，２から、電極形成材料中に、Ｃｕ或
いは、ＣｕとＣｕＯを配合することによっても、素体に
対する電極の接着強度を高め、高温度雰囲気で使用した
際の抵抗値の経時変化率を小さくすることができること
が明らかである。From Tables 1 and 2, it can be seen that, by mixing Cu or Cu and CuO into the electrode forming material, the adhesive strength of the electrode to the element body was increased, and the resistance value of the electrode when used in a high-temperature atmosphere was measured over time. It is clear that the rate of change can be reduced.
【００３２】[0032]
【発明の効果】以上詳述した通り、本発明のサーミスタ
素子によれば、素体に対する電極の接着強度が高く、高
温度雰囲気中にて長時間使用した場合においても、抵抗
値の経時変化率が小さく、信頼性の高いサーミスタ素子
が提供される。As described above in detail, according to the thermistor element of the present invention, the adhesive strength of the electrode to the element body is high, and even when the electrode is used in a high-temperature atmosphere for a long time, the rate of change of the resistance value with time. And a highly reliable thermistor element is provided.
【００３３】特に、請求項２のサーミスタ素子によれ
ば、より一層高特性のサーミスタ素子が提供される。In particular, according to the thermistor element of the second aspect, a thermistor element having higher characteristics is provided.
【図１】実施例１におけるＣｕＯ又はＢｉ２Ｏ３含有率
と電極の接着強度との関係を示すグラフである。FIG. 1 is a graph showing the relationship between the CuO or Bi 2 O 3 content and the adhesive strength of an electrode in Example 1.
【図２】ＣｕＯ含有率１％の場合の抵抗値経時変化率を
示すグラフである。FIG. 2 is a graph showing the rate of change in resistance over time when the CuO content is 1%.
【図３】ＣｕＯ含有率２％の場合の抵抗値経時変化率を
示すグラフである。FIG. 3 is a graph showing the rate of change of resistance with time when the CuO content is 2%.
【図４】ＣｕＯ含有率５％の場合の抵抗値経時変化率を
示すグラフである。FIG. 4 is a graph showing the rate of change with time of the resistance value when the CuO content is 5%.
【図５】ＣｕＯ含有率１０％の場合の抵抗値経時変化率
を示すグラフである。FIG. 5 is a graph showing a change rate of a resistance value with time when the CuO content is 10%.
【図６】ＣｕＯ及びＢｉ２Ｏ３含有なしの場合の抵抗値
経時変化率を示すグラフである。FIG. 6 is a graph showing the rate of change of resistance with time when CuO and Bi 2 O 3 are not contained.
【図７】Ｂｉ２Ｏ３含有率１％の場合の抵抗値経時変化
率を示すグラフである。FIG. 7 is a graph showing a change rate of a resistance value with time when a Bi 2 O 3 content is 1%.
【図８】Ｂｉ２Ｏ３含有率５％の場合の抵抗値経時変化
率を示すグラフである。FIG. 8 is a graph showing a time-dependent change in resistance value when the Bi 2 O 3 content is 5%.
【図９】実施例１において、素体と電極との界面付近の
断面に対して、エネルギー分散型Ｘ線分析装置を用いて
元素分析を行った結果を示すグラフである。FIG. 9 is a graph showing a result of performing elemental analysis on a cross section near an interface between an element body and an electrode using an energy dispersive X-ray analyzer in Example 1.
フロントページの続き (72)発明者 中島 弘明 埼玉県秩父郡横瀬町大字横瀬2270番地 三菱マテリアル株式会社電子技術研究所 内 (56)参考文献 特開 平２−143502（ＪＰ，Ａ) 特開 平４−334001（ＪＰ，Ａ) 特開 昭57−180112（ＪＰ，Ａ) (58)調査した分野(Int.Cl.7，ＤＢ名) H01C 7/02 - 7/22 Continuation of the front page (72) Inventor Hiroaki Nakajima 2270 Yokoze, Yokoze-cho, Chichibu-gun, Saitama Mitsubishi Materials Electronic Technology Laboratory (56) References JP-A-2-143502 (JP, A) JP-A-4 -334001 (JP, A) JP-A-57-180112 (JP, A) (58) Fields investigated (Int. Cl. 7 , DB name) H01C 7/ 02-7/22
Claims (2)
りなる負特性サーミスタ素体に、Ａｇ，Ａｕ又はＰｔを
主成分とする貴金属電極を形成してなるサーミスタ素子
において、 電極形成材料が銅及び／又は銅化合物を含有し、 銅及び／又は銅化合物の含有量が電極形成材料中の無機
物含有量の２０重量％以下である ことを特徴とするサー
ミスタ素子。1. A sintered body containing a transition metal oxide as a main component.
The negative characteristic thermistor body, Ag, Au or Pt
Precious metals as main componentsThermistor element formed with electrodes
In, the electrode forming material is copperAnd / or copper compoundsContainsAnd When the content of copper and / or copper compound is inorganic in the electrode forming material
Not more than 20% by weight of the substance content Sir characterized by that
Mister element.
て、サーミスタ素体は、Ｍｎ，Ｃｏ及びＦｅの酸化物を
主成分とする焼結体よりなることを特徴とするサーミス
タ素子。2. The thermistor element according to claim 1, wherein the thermistor element is made of a sintered body containing oxides of Mn, Co and Fe as main components.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP03826895A JP3218906B2 (en) | 1995-02-27 | 1995-02-27 | Thermistor element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP03826895A JP3218906B2 (en) | 1995-02-27 | 1995-02-27 | Thermistor element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH08236309A JPH08236309A (en) | 1996-09-13 |
| JP3218906B2 true JP3218906B2 (en) | 2001-10-15 |
Family
ID=12520580
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP03826895A Expired - Lifetime JP3218906B2 (en) | 1995-02-27 | 1995-02-27 | Thermistor element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3218906B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3846378B2 (en) | 2002-07-25 | 2006-11-15 | 株式会社村田製作所 | Manufacturing method of negative characteristic thermistor |
| CN100395849C (en) * | 2004-09-02 | 2008-06-18 | 中国科学院新疆理化技术研究所 | Ternary system negative temperature coefficient thermosensitive resistance material and its producing method |
-
1995
- 1995-02-27 JP JP03826895A patent/JP3218906B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH08236309A (en) | 1996-09-13 |
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