JP3218797B2 - Method for manufacturing high-frequency circuit module - Google Patents

Method for manufacturing high-frequency circuit module

Info

Publication number
JP3218797B2
JP3218797B2 JP11811393A JP11811393A JP3218797B2 JP 3218797 B2 JP3218797 B2 JP 3218797B2 JP 11811393 A JP11811393 A JP 11811393A JP 11811393 A JP11811393 A JP 11811393A JP 3218797 B2 JP3218797 B2 JP 3218797B2
Authority
JP
Japan
Prior art keywords
bonding
electrode
coil
bonding wire
frequency circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP11811393A
Other languages
Japanese (ja)
Other versions
JPH06334000A (en
Inventor
豊樹 浅田
邦夫 松本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP11811393A priority Critical patent/JP3218797B2/en
Publication of JPH06334000A publication Critical patent/JPH06334000A/en
Application granted granted Critical
Publication of JP3218797B2 publication Critical patent/JP3218797B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/58Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64Impedance arrangements
    • H01L23/66High-frequency adaptations
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/58Structural electrical arrangements for semiconductor devices not otherwise provided for
    • H01L2223/64Impedance arrangements
    • H01L2223/66High-frequency adaptations
    • H01L2223/6605High-frequency electrical connections
    • H01L2223/6611Wire connections
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554External layer
    • H01L2224/0555Shape
    • H01L2224/05552Shape in top view
    • H01L2224/05554Shape in top view being square
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48092Helix
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • H01L2224/48463Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491Disposition
    • H01L2224/4911Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78Apparatus for connecting with wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78Apparatus for connecting with wire connectors
    • H01L2224/7825Means for applying energy, e.g. heating means
    • H01L2224/783Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301Capillary
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78Apparatus for connecting with wire connectors
    • H01L2224/788Means for moving parts
    • H01L2224/78821Upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
    • H01L2224/78822Rotational mechanism
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85009Pre-treatment of the connector or the bonding area
    • H01L2224/8503Reshaping, e.g. forming the ball or the wedge of the wire connector
    • H01L2224/85047Reshaping, e.g. forming the ball or the wedge of the wire connector by mechanical means, e.g. severing, pressing, stamping
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8512Aligning
    • H01L2224/85148Aligning involving movement of a part of the bonding apparatus
    • H01L2224/85169Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
    • H01L2224/8517Rotational movements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8512Aligning
    • H01L2224/85148Aligning involving movement of a part of the bonding apparatus
    • H01L2224/85169Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
    • H01L2224/8518Translational movements
    • H01L2224/85181Translational movements connecting first on the semiconductor or solid-state body, i.e. on-chip, regular stitch
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852Applying energy for connecting
    • H01L2224/85201Compression bonding
    • H01L2224/85205Ultrasonic bonding
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909Post-treatment of the connector or wire bonding area
    • H01L2224/8593Reshaping, e.g. for severing the wire, modifying the wedge or ball or the loop shape
    • H01L2224/85947Reshaping, e.g. for severing the wire, modifying the wedge or ball or the loop shape by mechanical means, e.g. "pull-and-cut", pressing, stamping
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/00014Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01004Beryllium [Be]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01033Arsenic [As]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01082Lead [Pb]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/14Integrated circuits
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161Cap
    • H01L2924/1615Shape
    • H01L2924/16152Cap comprising a cavity for hosting the device, e.g. U-shaped cap
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1905Shape
    • H01L2924/19051Impedance matching structure [e.g. balun]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191Disposition
    • H01L2924/19101Disposition of discrete passive components
    • H01L2924/19107Disposition of discrete passive components off-chip wires
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/301Electrical effects
    • H01L2924/30107Inductance
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/301Electrical effects
    • H01L2924/3011Impedance
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/301Electrical effects
    • H01L2924/3011Impedance
    • H01L2924/30111Impedance matching

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【産業上の利用分野】本発明は、携帯移動端末,テレビ
のチューナ部等の高周波回路実装に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a high-frequency circuit mounting of a portable mobile terminal, a tuner of a television, and the like.

【0002】[0002]

【従来の技術】従来、実装回路を構成する半導体部品や
回路モジュールの小形化,高密度化において、多数の小
形化実装方法が用いられている。その一例として、例え
ば特開平4−85746号公報に開示されているものが
ある。該公報には半導体集積回路のパッケージ構成にお
いて、素子電極とパッケージ電極との接続をコイル部品
でボンディングすることによって、外付け部品を削減で
き小形化,高密度化を図れた方法が示されている。
2. Description of the Related Art Conventionally, a number of miniaturized mounting methods have been used for miniaturizing and increasing the density of semiconductor components and circuit modules constituting a mounting circuit. One example is disclosed in Japanese Patent Application Laid-Open No. 4-85746. This publication discloses a method in which, in a package configuration of a semiconductor integrated circuit, bonding between element electrodes and package electrodes is performed by bonding with a coil component, so that external components can be reduced and the size and density can be reduced. .

【0003】[0003]

【発明が解決しようとする課題】しかしながら、上記の
半導体集積回路は下記のような問題点があった。この半
導体集積回路では素子電極とパッケージ電極との接続
に、個別部品であるコイル部品のリードをボンディング
する構造となっているため、微小なコイル部品の扱い、
更にはそのボンディング方法等、組立工程は複雑にな
る。このことは組立コストを高価にするばかりだけでな
く、コイル部品コストも加算され、結果的には高価な半
導体集積回路にならざるを得ない。また、このコイル部
品は、一体構造になっているためインダクタンス値の調
整ができない。これは、電源系以外の信号系において、
インダクタンス値の調整が必要な回路部への適用ができ
ないことを意味する。
However, the above-mentioned semiconductor integrated circuit has the following problems. This semiconductor integrated circuit has a structure in which the leads of the coil component, which is an individual component, are bonded to the connection between the element electrode and the package electrode.
Further, the assembly process such as the bonding method becomes complicated. This not only increases the cost of assembly but also adds the cost of coil parts, resulting in an expensive semiconductor integrated circuit. Further, since the coil component has an integral structure, the inductance value cannot be adjusted. This is for signal systems other than the power supply system.
This means that it cannot be applied to a circuit unit that requires adjustment of the inductance value.

【0004】本発明の目的は、上記した半導体集積回路
のコストの問題点を解決し、信号系回路のコイルにも適
用拡大できる小形高周波回路モジュールを提供しようと
するものである。
An object of the present invention is to solve the above-mentioned problem of the cost of a semiconductor integrated circuit and to provide a small high-frequency circuit module which can be applied to coils of a signal system circuit.

【0005】[0005]

【課題を解決するための手段】本発明は、上記目的を達
成するために高周波回路モジュールにおいて、必要とす
るインダクタンスの両端に対応する素子電極及びパッケ
ージ電極間にボンディングワイヤをコイル状に形成して
相互接続する手段を採用した。
According to the present invention, in order to achieve the above object, in a high-frequency circuit module, a bonding wire is formed in a coil shape between a device electrode and a package electrode corresponding to both ends of required inductance. Means of interconnection were adopted.

【0006】[0006]

【作用】上記した手段の採用により、以下の作用が達成
される。素子電極及びパッケージ電極の相互接続にボン
ディングワイヤをコイル状に形成して用いることによ
り、低価格でインダクタンス調整可能な高周波回路モジ
ュールを得ることができる。即ち、従来のコイル部品を
ボンディングする組立工程では、微小コイル部品の取扱
いやそのリード線のボンディングが複雑であり、また個
別部品としてコイル部品が必要などからコスト高になっ
ていたが、本発明によるコイル状ボンディングワイヤの
採用により、通常のワイヤボンディング工程に若干のコ
イル形成プロセスを付加することで、とくに個別部品と
してのコイル部品が必要としないことから低コストで必
要なインダクタンスを得ることができる。また、このコ
イル状ボンディグワイヤは細い棒等のようなインダクタ
ンス調整棒によって、接続後インダクタンス値の調整を
行うことが可能となる。更に空芯コイルを形成するため
の誘電体損失がなく高周波回路のインダクタンスとして
最適である。
The following effects are achieved by employing the above-mentioned means. By using a bonding wire formed in a coil shape for interconnection between the device electrode and the package electrode, a high-frequency circuit module with low inductance and adjustable inductance can be obtained. That is, in the conventional assembly process for bonding coil components, handling of micro coil components and bonding of lead wires thereof are complicated, and the cost is high because coil components are required as individual components. By using a coil-shaped bonding wire, by adding a slight coil forming process to the normal wire bonding step, the required inductance can be obtained at low cost since coil components as individual components are not required. In addition, it is possible to adjust the inductance value of the coiled bonding wire after connection by using an inductance adjusting rod such as a thin rod. Furthermore, there is no dielectric loss for forming the air-core coil, and it is optimal as an inductance of a high-frequency circuit.

【0007】[0007]

【実施例】図1,図2は、本発明の高周波回路モジュー
ルの一実施例である。図3,図4はコイル状ボンディン
グワイヤ3を形成する製造方法である。また、図5,図
6は本発明の高周波回路モジュールを弾性表面波装置に
適用した実施例である。
1 and 2 show an embodiment of a high-frequency circuit module according to the present invention. 3 and 4 show a manufacturing method for forming the coil-shaped bonding wire 3. FIGS. 5 and 6 show an embodiment in which the high-frequency circuit module of the present invention is applied to a surface acoustic wave device.

【0008】以下、図1,図2を用いて本発明の実施例
を説明する。
An embodiment of the present invention will be described below with reference to FIGS.

【0009】本発明による高周波回路モジュールは、基
板2上に能動素子6を載置し、インダクタンスを必要と
する素子電極5とパッケージ電極7との接続に用いるボ
ンディンワイヤ4を空芯コイルのようにして、コイル状
ボンディンワイヤ3を形成接続し、キャップ1で封止す
ることによって構成される。更に、調整が必要なインダ
クタンスは図3に示すようにコイル状ボンディグワイヤ
3を、細い棒等のようなインダクタンス調整棒12によ
って、接続後インダクタンス値の調整を行う。
In the high-frequency circuit module according to the present invention, the active element 6 is mounted on the substrate 2 and the bond wire 4 used for connecting the element electrode 5 requiring inductance and the package electrode 7 is like an air-core coil. Then, the coiled bond wire 3 is formed, connected, and sealed with the cap 1. Further, as for the inductance that needs to be adjusted, as shown in FIG. 3, the coiled bonding wire 3 is adjusted with an inductance adjusting rod 12 such as a thin rod to adjust the inductance value after connection.

【0010】また、図示しないが本発明のコイル状ボン
ディングワイヤ3は素子電極5とパッケージ電極7との
接続に限らず、インダクタンスの必要な素子電極5相
互、あるいはパッケージ電極7相互の接続等にも使用で
きる。
Although not shown, the coiled bonding wire 3 of the present invention is not limited to the connection between the device electrode 5 and the package electrode 7, but may also be used for connection between the device electrodes 5 requiring an inductance or between the package electrodes 7. Can be used.

【0011】以下、次いで図3,図4を用いて本発明の
実施例に用いたコイル状ボンディングワイヤ3を形成す
る製造方法について説明する。
Next, a manufacturing method for forming the coil-shaped bonding wire 3 used in the embodiment of the present invention will be described with reference to FIGS.

【0012】本発明は、上記目的を達成するために二つ
の手段を採用した。一つ目の手段として、図3に示すよ
うに素子電極5とパッケージ電極7との接続に用いる通
常のボンディングワイヤを第一ボンディング8,第二ボ
ンディング9の作業工程間において、基板2を固定し、
ボンディングツール10を回転させてコイル状ボンディ
ングワイヤ3を形成する手段を採用した。また、前記の
方法とは逆に、ボンディングツール10を固定し、基板
2を回転させてボンディングワイヤをコイル状に形成す
る手段を採用した。
The present invention employs two means to achieve the above object. As a first means, as shown in FIG. 3, a normal bonding wire used for connection between the device electrode 5 and the package electrode 7 is fixed to the substrate 2 between the work steps of the first bonding 8 and the second bonding 9. ,
Means for forming the coiled bonding wire 3 by rotating the bonding tool 10 is employed. Further, contrary to the above-described method, means for fixing the bonding tool 10 and rotating the substrate 2 to form the bonding wires in a coil shape is employed.

【0013】二つ目の手段として、図4に示すように素
子電極5とパッケージ電極7との接続で用いる通常のボ
ンディングワイヤを第一ボンディング8,第二ボンディ
ング9の作業工程間に、棒状でコイル軸となるコイルガ
イド11にボンディングワイヤを巻きつけてコイルガイ
ド11を引き抜き、ボンディングワイヤをコイル状に形
成する手段を採用した。また前記とは逆に、コイルガイ
ド11を中心に基板2を回転させてコイルガイド11に
ボンディングワイヤを巻きつけてボンディングワイヤを
コイル状に形成する手段を採用した。本発明はネールヘ
ッドボンディング方式、並びに超音波ウェッジボンディ
ング方式等、とくにボンディング方式にとらわれること
もなく使用可能である。
As a second means, as shown in FIG. 4, a normal bonding wire used for connection between the device electrode 5 and the package electrode 7 is provided in the form of a rod between the operation steps of the first bonding 8 and the second bonding 9. A means for winding a bonding wire around a coil guide 11 serving as a coil axis, pulling out the coil guide 11, and forming the bonding wire in a coil shape is employed. Contrary to the above, means for rotating the substrate 2 around the coil guide 11 and winding the bonding wire around the coil guide 11 to form the bonding wire in a coil shape is adopted. The present invention can be used without being limited to a bonding method such as a nail head bonding method and an ultrasonic wedge bonding method.

【0014】次に、本発明の高周波回路モジュールとし
て具体的に弾性表面波装置に適用した実装例を図5,図
6を用いて説明する。
Next, an example of a high-frequency circuit module according to the present invention specifically applied to a surface acoustic wave device will be described with reference to FIGS.

【0015】図6において、SAWは弾性表面波素子1
3である。弾性表面波装置は周辺回路として、インピー
ダンス整合用インダクタンスL1,L2,L3,L4、
を付加したものであり、図5はその実装概念図である。
図5において素子電極5とパッケージ電極7との接続に
用いるコイル状ボンディグワイヤ3を用いることによ
り、インダクタンスL2,L3、を得、パッケージ電極
7と設置電極14との接続にコイル状ボンディングワイ
ヤ3を用いることによりインダクタンスL1,L4、が
形成できる。即ち、本実施例では接続と整合回路の形成
を同時に行うことができ本装置のコスト低減が達成され
る。なお、本発明は弾性表面波装置に限らず、低ノイズ
増幅器,電圧制御発振器,ミキサー等高周波回路モジュ
ールに用いることが可能であることは言うまでもない。
In FIG. 6, SAW is a surface acoustic wave element 1.
3. The surface acoustic wave device has impedance matching inductances L1, L2, L3, L4 as peripheral circuits.
FIG. 5 is a conceptual diagram of the implementation.
In FIG. 5, the inductance L2, L3 is obtained by using the coiled bonding wire 3 used for connecting the element electrode 5 and the package electrode 7, and the coiled bonding wire 3 is used for connecting the package electrode 7 and the installation electrode 14. , The inductances L1 and L4 can be formed. That is, in this embodiment, the connection and the formation of the matching circuit can be performed at the same time, so that the cost of the device can be reduced. It is needless to say that the present invention can be used not only for the surface acoustic wave device but also for a high-frequency circuit module such as a low noise amplifier, a voltage controlled oscillator, and a mixer.

【0016】[0016]

【発明の効果】従来の半導体集積回路では、素子電極と
パッケージ電極との接続にコイル部品をボンディングす
る複雑な組立工程によって組立コストが高くなると同時
に、個別部品を必要とした。また、コイル部品が一体構
造であるため、接続後にはインダクタンスの調整を行う
ことができず信号系回路への適用には不向きであった。
しかし、本発明によれば、素子電極とパッケージ電極と
の接続に用いるボンディングワイヤを空芯コイルのよう
にして、コイル状ボンディングワイヤを形成させるた
め、比較的組立工程を安価にでき、かつコイル状ボンデ
ィングワイヤ接続後、細い棒等のようなインダクタンス
調整棒によって、インダクタンス値の調整を行うことが
可能である。更に誘電対損失がないため高周波回路に広
く適用できる。
In the conventional semiconductor integrated circuit, the assembly cost is increased due to the complicated assembly process of bonding the coil component to the connection between the device electrode and the package electrode, and individual components are required. In addition, since the coil component has an integral structure, the inductance cannot be adjusted after connection, which is not suitable for application to a signal system circuit.
However, according to the present invention, the bonding wire used for connection between the element electrode and the package electrode is formed as a coil-shaped bonding wire like an air-core coil. After the bonding wire is connected, the inductance value can be adjusted with an inductance adjusting rod such as a thin rod. Furthermore, since there is no dielectric pair loss, it can be widely applied to high frequency circuits.

【0017】なお、本発明の効果として従来技術で述べ
られている小形化実装の長所も合わせもっている。
As an effect of the present invention, there is also an advantage of miniaturized mounting described in the prior art.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の高周波回路モジュールの一実施例を示
す実装概念図である。
FIG. 1 is a conceptual view showing a mounting of a high-frequency circuit module according to an embodiment of the present invention.

【図2】図1のA−A′の断面図である。FIG. 2 is a sectional view taken along the line AA ′ of FIG.

【図3】本発明のボンディングワイヤをコイル状に形成
する製造方法を示す図である。
FIG. 3 is a diagram illustrating a manufacturing method for forming a bonding wire in a coil shape according to the present invention.

【図4】本発明のボンディングワイヤをコイル状に形成
する他の製造方法を示す図である。
FIG. 4 is a view showing another manufacturing method for forming the bonding wire of the present invention into a coil shape.

【図5】本発明の高周波回路モジュールを弾性表面波装
置に適した一実施例を示す実装概念図である。
FIG. 5 is a conceptual view showing an embodiment in which the high-frequency circuit module of the present invention is suitable for a surface acoustic wave device.

【図6】図5に示した弾性表面波装置の回路図である。6 is a circuit diagram of the surface acoustic wave device shown in FIG.

【符号の説明】[Explanation of symbols]

1…キャップ、2…基板、3…コイル状ボンディングワ
イヤ、4…ボンディングワイヤ、5…素子電極、6…能
動素子、7…パッケージ電極、8…第一ボンディング、
9…第二ボンディング、10…ボンディングツール、1
1…コイルガイド、12…インダクタンス調整棒、13
…弾性表面波素子、14…接地電極、L1,L2,L
3,L4…インダクタンス。
DESCRIPTION OF SYMBOLS 1 ... Cap, 2 ... Substrate, 3 ... Coil bonding wire, 4 ... Bonding wire, 5 ... Element electrode, 6 ... Active element, 7 ... Package electrode, 8 ... First bonding,
9: second bonding, 10: bonding tool, 1
1 ... Coil guide, 12 ... Inductance adjustment rod, 13
... Surface acoustic wave element, 14 ... Ground electrode, L1, L2, L
3, L4 ... inductance.

───────────────────────────────────────────────────── フロントページの続き (58)調査した分野(Int.Cl.7,DB名) H01L 21/60 H01L 27/04 ──────────────────────────────────────────────────続 き Continued on front page (58) Field surveyed (Int.Cl. 7 , DB name) H01L 21/60 H01L 27/04

Claims (3)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】子電極及びパッケージ電極の一方の電極
をボンディングした後、他方の電極をボンディングする
周波モジュールの製造方法であって、 前記一方の電極をボンディングした後、前記他方の電極
をボンディングする前に、 ボンディングツール又はモジ
ュール基板を回転させてボンディングワイヤをコイル状
に形成することを特徴とする高周波モジュールの製造方
法。
[Claim 1] One electrode of the element electrode and the package electrode
After bonding the other electrode
A method of producing a high-frequency module, after bonding the one electrode, the other electrode
A bonding tool or a module substrate is rotated before bonding to form bonding wires in a coil shape.
【請求項2】子電極及びパッケージ電極の一方の電極
をボンディングした後、他方の電極をボンディングする
周波モジュールの製造方法であって、 前記一方の電極をボンディングした後、前記他方の電極
をボンディングする前に、 コイル軸となるコイルガイド
を中心にボンディングツール、またはモジュール基板を
回転させて、ボンディングワイヤをコイルガイドに巻き
つけることにより、ボンディングワイヤをコイル状に形
成することを特徴とする高周波回路モジュールの製造方
法。
Wherein one electrode of the element electrode and the package electrode
After bonding the other electrode
A method of producing a high-frequency module, after bonding the one electrode, the other electrode
Before bonding , the bonding wire is formed in a coil shape by rotating a bonding tool or a module substrate around a coil guide serving as a coil axis and winding the bonding wire around the coil guide. Manufacturing method of high frequency circuit module.
【請求項3】請求項2において、 前記ボンディングワイヤをコイル状に形成した後に前記
コイルガイドを取り除くことを特徴とする高周波回路モ
ジュールの製造方法。
3. The method according to claim 2, wherein the bonding wire is formed in a coil shape after forming the bonding wire.
High frequency circuit module characterized by removing the coil guide
How to make joules.
JP11811393A 1993-05-20 1993-05-20 Method for manufacturing high-frequency circuit module Expired - Fee Related JP3218797B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11811393A JP3218797B2 (en) 1993-05-20 1993-05-20 Method for manufacturing high-frequency circuit module

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11811393A JP3218797B2 (en) 1993-05-20 1993-05-20 Method for manufacturing high-frequency circuit module

Publications (2)

Publication Number Publication Date
JPH06334000A JPH06334000A (en) 1994-12-02
JP3218797B2 true JP3218797B2 (en) 2001-10-15

Family

ID=14728353

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11811393A Expired - Fee Related JP3218797B2 (en) 1993-05-20 1993-05-20 Method for manufacturing high-frequency circuit module

Country Status (1)

Country Link
JP (1) JP3218797B2 (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107004665A (en) * 2014-09-22 2017-08-01 Mc10股份有限公司 The moulding and ring device and method of bonding line as extensible and flexible interconnection
US10296819B2 (en) 2012-10-09 2019-05-21 Mc10, Inc. Conformal electronics integrated with apparel
US10383219B2 (en) 2008-10-07 2019-08-13 Mc10, Inc. Extremely stretchable electronics
US10447347B2 (en) 2016-08-12 2019-10-15 Mc10, Inc. Wireless charger and high speed data off-loader
US10986465B2 (en) 2015-02-20 2021-04-20 Medidata Solutions, Inc. Automated detection and configuration of wearable devices based on on-body status, location, and/or orientation

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2795251B2 (en) * 1996-02-21 1998-09-10 日本電気株式会社 Semiconductor device
CN1335674A (en) * 2000-06-22 2002-02-13 德克萨斯仪器股份有限公司 On-chip signal filter with bonded lead inductance
JP2003163403A (en) * 2001-11-29 2003-06-06 Mitsubishi Electric Corp Optical element module
JP2009158839A (en) * 2007-12-27 2009-07-16 Sharp Corp Semiconductor package, semiconductor device and wire bonding method

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10383219B2 (en) 2008-10-07 2019-08-13 Mc10, Inc. Extremely stretchable electronics
US10296819B2 (en) 2012-10-09 2019-05-21 Mc10, Inc. Conformal electronics integrated with apparel
CN107004665A (en) * 2014-09-22 2017-08-01 Mc10股份有限公司 The moulding and ring device and method of bonding line as extensible and flexible interconnection
EP3198638A4 (en) * 2014-09-22 2018-05-30 Mc10, Inc. Methods and apparatuses for shaping and looping bonding wires that serve as stretchable and bendable interconnects
US10986465B2 (en) 2015-02-20 2021-04-20 Medidata Solutions, Inc. Automated detection and configuration of wearable devices based on on-body status, location, and/or orientation
US10447347B2 (en) 2016-08-12 2019-10-15 Mc10, Inc. Wireless charger and high speed data off-loader

Also Published As

Publication number Publication date
JPH06334000A (en) 1994-12-02

Similar Documents

Publication Publication Date Title
JP3007023B2 (en) Semiconductor integrated circuit and method of manufacturing the same
JP2721093B2 (en) Semiconductor device
JP3265889B2 (en) Surface acoustic wave device and method of manufacturing the same
JP3218797B2 (en) Method for manufacturing high-frequency circuit module
JPS5966157A (en) Semiconductor device and manufacture thereof
JPH0547958A (en) Resin sealed semiconductor device
JP2861956B2 (en) High frequency device package and manufacturing method thereof
JPH09162691A (en) Device having surface acoustic wave element and its manufacture
JPH0217664A (en) Resin mold type semiconductor device for high-frequency and manufacture thereof
US11146896B2 (en) Mems microphone with improved connection structure and method for manufacturing the same
US4527330A (en) Method for coupling an electronic device into an electrical circuit
JPS603781B2 (en) Assembly method of ultra-high frequency transistor device
JPH09213868A (en) Lead frame for microwave semiconductor integrated circuit
JPH11340405A (en) Lead frame, semiconductor device and manufacture thereof
JPH05211279A (en) Hybrid integrated circuit
JP2596399B2 (en) Semiconductor device
JPH07240482A (en) Resin sealed semiconductor element
JPH0817999A (en) Semiconductor device
JPH05291478A (en) Plastic sealed semiconductor device
JPH09232383A (en) Semiconductor device
JPS5989447A (en) Semiconductor device
JPH0738043A (en) Semiconductor device
JPH097856A (en) Circuit component
JPH04351107A (en) Piezoelectric oscillator and its manufacture
JPS5933916A (en) Manufacture of surface wave filter

Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees