JP3200488B2 - Resin-sealed semiconductor device and method of manufacturing the same - Google Patents
Resin-sealed semiconductor device and method of manufacturing the sameInfo
- Publication number
- JP3200488B2 JP3200488B2 JP673193A JP673193A JP3200488B2 JP 3200488 B2 JP3200488 B2 JP 3200488B2 JP 673193 A JP673193 A JP 673193A JP 673193 A JP673193 A JP 673193A JP 3200488 B2 JP3200488 B2 JP 3200488B2
- Authority
- JP
- Japan
- Prior art keywords
- resin
- semiconductor device
- leads
- manufacturing
- electrodes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/4826—Connecting between the body and an opposite side of the item with respect to the body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73215—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
Landscapes
- Lead Frames For Integrated Circuits (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、プラスチックパッケー
ジ等の樹脂で封止された樹脂封止型半導体装置及びその
製造方法に関するものである。The present invention relates to a sealed resin-sealed semiconductor device and a resin such as a plastic package
It relates to a manufacturing method .
【０００２】[0002]
【従来の技術】従来、この種の樹脂封止半導体装置は、
搭載される半導体ペレットの大型化に伴い、パッケージ
側端とデバイス取付部であるダイパッドとの間の寸法が
一段と狭くなる傾向にある。これは、デバイスサイズが
大きくなっているのに、これを収納するパッケージのサ
イズが規格化されているため、大きくすることができな
いことに起因する。その結果、デバイスより電気的に接
続する内部リードの引き廻しの制限、外部リードの引抜
き強度の低下、および半田耐熱性の低下が生じる。2. Description of the Related Art Conventionally, this type of resin-sealed semiconductor device has been
As the size of the semiconductor pellet to be mounted increases, the dimension between the package side end and the die pad as a device mounting portion tends to be further reduced. This is because, although the device size is large, the size of the package for storing the device cannot be increased because the size of the package is standardized. As a result, there is a limitation on the routing of the internal leads that are electrically connected to the device, a decrease in the pull-out strength of the external leads, and a decrease in solder heat resistance.
【０００３】そこで、例えば、特開昭６１−２１８１３
９号公報に開示されているように、デバイスの非回路形
成面に、ボンディングパッドに被らない大きさの絶縁シ
ートを接着し、この絶縁シート上面には、内部リードを
延在することにより、内部リードと樹脂との接着力を大
幅に向上させ、大型デバイスを搭載する場合でも、樹脂
からのリード抜けを防止できる構造が示されている。For example, Japanese Patent Application Laid-Open No. 61-21813 discloses
As disclosed in Japanese Unexamined Patent Publication No. 9 (1999), an insulating sheet having a size that does not cover bonding pads is bonded to the non-circuit forming surface of the device, and internal leads are extended on the upper surface of the insulating sheet. A structure is shown in which the adhesive force between the internal lead and the resin is significantly improved, and even when a large device is mounted, the lead can be prevented from coming off from the resin.
【０００４】図８は従来の樹脂封止半導体装置を示す断
面図であり、特にＬＯＣ（リード・オン・チップ）を示
す。図において、１はデバイス、２は両面に接着剤が塗
布された絶縁性両面接着テープであり、この絶縁性両面
接着テープ２の下面にはデバイスの上面が接着固定され
ている。３はこの絶縁性両面接着テープ２の上面に接着
固定した内部リード、４はこの内部リード３上に設けた
ボンディングワイヤ用の金属被膜、５はデバイス１のボ
ンディングパッド、６はこのボンディングパッドと内部
リード３とを電気的に接続するＡｕ線などのボンディン
グワイヤ、７は樹脂である。FIG. 8 is a cross-sectional view showing a conventional resin-encapsulated semiconductor device, particularly showing a LOC (lead-on-chip). In the figure, reference numeral 1 denotes a device, and 2 denotes an insulating double-sided adhesive tape having an adhesive applied to both surfaces. The upper surface of the device is bonded and fixed to the lower surface of the insulating double-sided adhesive tape 2. Reference numeral 3 denotes an internal lead adhered and fixed to the upper surface of the insulating double-sided adhesive tape 2, reference numeral 4 denotes a metal film for a bonding wire provided on the internal lead 3, reference numeral 5 denotes a bonding pad of the device 1, and reference numeral 6 denotes the bonding pad and the internal A bonding wire 7 such as an Au wire for electrically connecting the lead 3 and 7 are resin.
【０００５】この構成による樹脂封止半導体装置は、ダ
イパッドがなく、デバイス１の表面と内部リード３の下
面とを絶縁性両面接着テープ２を挟んで張り合わせて固
定する。そして、デバイス１のボンディングパッド５と
内部リード３の金属被膜４とをボンディングワイヤ６に
より電気的に接続する。そして、全体を樹脂７で封止し
たものである。The resin-encapsulated semiconductor device having this configuration has no die pad, and the surface of the device 1 and the lower surface of the internal lead 3 are adhered and fixed with the insulating double-sided adhesive tape 2 interposed therebetween. Then, the bonding pad 5 of the device 1 and the metal coating 4 of the internal lead 3 are electrically connected by the bonding wire 6. The entire structure is sealed with a resin 7.
【０００６】図９は従来の他の樹脂封止半導体装置を示
す断面図であり、特にＣＯＬ（チップ・オン・リード）
を示す。図において、８は両面に接着剤が塗布された絶
縁性両面接着テープであり、この絶縁性両面接着テープ
８の上面にデバイス１の下面が接着固定される。９はこ
の絶縁性両面接着テープ８の下面に接着固定された内部
リード、１０はこの内部リード９上に設けたボンディン
グ用の金属被膜、１１はデバイス１のボンディングパッ
ド５と内部リード９とを電気的に接続するＡｕ線などの
ボンディングワイヤである。FIG. 9 is a cross-sectional view showing another conventional resin-encapsulated semiconductor device, particularly COL (chip-on-lead).
Is shown. In the figure, reference numeral 8 denotes an insulating double-sided adhesive tape having both sides coated with an adhesive, and the lower surface of the device 1 is bonded and fixed to the upper surface of the insulating double-sided adhesive tape 8. Reference numeral 9 denotes an internal lead adhered and fixed to the lower surface of the insulating double-sided adhesive tape 8, reference numeral 10 denotes a metal film for bonding provided on the internal lead 9, and reference numeral 11 denotes an electric connection between the bonding pad 5 and the internal lead 9 of the device 1. Bonding wires, such as Au wires, which are electrically connected.
【０００７】この構成による樹脂封止半導体装置は、ダ
イパッドがなく、デバイス１の裏面と内部リード９の上
面とを絶縁性両面接着テープ８を挟んで張り合わせて固
定する。そして、デバイス１のボンディングパッド５と
内部リード９とをボンディングワイヤ１１により電気的
に接続する。そして、全体を樹脂７で封止したものであ
る。In the resin-encapsulated semiconductor device having this configuration, there is no die pad, and the back surface of the device 1 and the upper surface of the internal lead 9 are adhered and fixed with the insulating double-sided adhesive tape 8 interposed therebetween. Then, the bonding pads 5 of the device 1 and the internal leads 9 are electrically connected by the bonding wires 11. The entire structure is sealed with a resin 7.
【０００８】[0008]
【発明が解決しようとする課題】しかしながら、上記構
成のＬＯＣ、ＣＯＬといった樹脂封止半導体装置では、
デバイスを単体でしか接着し、電気的に接続することが
できず、装置単体で、デバイス単体の機能および容量し
か得られないという問題点があった。However, in the resin-encapsulated semiconductor devices such as LOC and COL having the above structure,
There is a problem in that the device can be bonded and electrically connected only by itself, and only the function and capacity of the device alone can be obtained by the device alone.
【０００９】この発明は、装置単体で、デバイス単体の
機能および容量しか得られないという問題点を除去した
優れた装置を提供することを目的とする。[0009] The present invention is a device itself, and to provide a <br/> excellent device removing the problem that give only the functions and capacity of the device itself.
【００１０】[0010]
【課題を解決するための手段】本発明に係る樹脂封止型
半導体装置は、上部デバイスの複数の電極と複数のリー
ドの主面とを接続する複数の第１ボンディングワイヤ
と、下部デバイスの複数の電極と複数のリードの主面と
を接続する複数の第２ボンディングワイヤとを有してお
り、上部デバイスと下部デバイスとは、上部デバイスの
端部が下部デバイスの端部とは平面的に異なるように、
かつ互いの電極が形成された面が略同一方向を向くよう
に配置されたものである。 Resin sealed according to the present invention SUMMARY OF THE INVENTION <br/> semiconductor device, a plurality of electrodes and a plurality of Lee upper device
Plural First Bonding Wires Connected to Main Surface of Node
And the main surfaces of the plurality of electrodes and the plurality of leads of the lower device.
And a plurality of second bonding wires for connecting
The upper device and the lower device are
So that the edge is different from the edge of the lower device in a plane
And the surfaces on which the electrodes are formed face in substantially the same direction.
It is arranged in.
【００１１】[0011]
【作用】本発明は、装置当りの機能および容量が増加
し、集積度を向上することができる。According to the present invention, the function and capacity per device are increased, and the degree of integration can be improved.
【００１２】[0012]
【実施例】図１は本発明に係る樹脂封止半導体装置の第
１実施例を示す概略断面図であり、図２は図１の樹脂を
破断した斜視図である。図において、１２は上部デバイ
ス、１３はこの上部デバイス１２と同じデバイスサイズ
の下部デバイス、１４はリードフレームの第１内部リー
ドであり、この第１内部リード１４は、その詳細を図３
に示すように上部デバイス１２と下部デバイス１３との
接着部分に設けられている。そして、この第１内部リー
ド１４の表面には、第１絶縁性電着樹脂層１５があらか
じめ電着されており、第１内部リード１４の裏面には第
２絶縁性電着樹脂層１６があらかじめ電着されている。
ここで、電着樹脂はリードフレームの最終工程に電着さ
れ、アクリル系（アニオン型電着樹脂）、エポキシ系
（カチオン型電着樹脂）を使用している。この組成は主
骨格樹脂、水溶性官能基、架橋成分、中和剤、添加剤、
助剤、硬化触媒、希釈剤などである。この電着樹脂をリ
ードフレームの周りを被う様にする。この厚さは１５〜
３０μｍであり、ダイスボンドの時に熱圧着によって接
着される（熱８０〜１５０℃、荷重０．２〜１．０ｋ
ｇ）。１７は第２内部リードであり、この第２内部リー
ド１７の裏面には図３に示すように第２絶縁性電着樹脂
層１６があらかじめ電着されている。１８は図３に示す
ように、第１内部リード１４および第２内部リード１７
上に設けたボンディングワイヤ用の金属被膜、１９はボ
ンディングパッド、２０は金属被膜１８とボンディング
パッド１９とを電気的に接続するボンディングワイヤで
ある。FIG. 1 is a schematic sectional view showing a first embodiment of a resin-sealed semiconductor device according to the present invention, and FIG. 2 is a perspective view in which the resin of FIG. 1 is cut away. In the drawing, 12 is an upper device, 13 is a lower device having the same device size as the upper device 12, 14 is a first internal lead of a lead frame, and the first internal lead 14 is shown in detail in FIG.
As shown in the figure, the upper device 12 and the lower device 13 are provided at the bonding portion. A first insulating electrodeposition resin layer 15 is previously electrodeposited on the surface of the first internal lead 14, and a second insulating electrodeposition resin layer 16 is previously electrodeposited on the back surface of the first internal lead 14. Electrodeposited.
Here, the electrodeposited resin is electrodeposited in the final step of the lead frame, and an acrylic (anionic electrodeposited resin) or an epoxy (cationic electrodeposited resin) is used. This composition is composed of a main skeleton resin, a water-soluble functional group, a crosslinking component, a neutralizing agent, an additive,
Auxiliaries, curing catalysts, diluents and the like. This electrodeposited resin covers the lead frame. This thickness is 15 ~
30 μm and bonded by thermocompression bonding at the time of die bonding (heat: 80 to 150 ° C., load: 0.2 to 1.0 k)
g). Reference numeral 17 denotes a second internal lead. A second insulating electrodeposited resin layer 16 is electrodeposited on the back surface of the second internal lead 17 as shown in FIG. Reference numeral 18 denotes a first internal lead 14 and a second internal lead 17 as shown in FIG.
A metal film for a bonding wire provided above, 19 is a bonding pad, and 20 is a bonding wire for electrically connecting the metal film 18 and the bonding pad 19.
【００１３】なお、ボンディングワイヤ用の金属被膜１
８上には第１絶縁性電着樹脂層１５を電着しないように
する。これはリード裏面の電着樹脂が金属被膜１８を被
った場合ワイヤボンディングを行う時に金属接合できな
いからである。また、第１絶縁性電着樹脂層１５および
第２絶縁性電着樹脂層１６は、例えば１５〜３０μｍの
厚さであり、それ以下になるとデバイス表面と内部リー
ドとの絶縁性が、信頼性試験によって低下することが懸
念される。The metal film 1 for the bonding wire
The first insulating electrodeposition resin layer 15 is not electrodeposited on the upper surface 8. This is because if the electrodeposition resin on the back surface of the lead is covered with the metal film 18, metal bonding cannot be performed when performing wire bonding. Further, the first insulating electrodeposition resin layer 15 and the second insulating electrodeposition resin layer 16 have a thickness of, for example, 15 to 30 μm. It is feared that it will be reduced by the test.
【００１４】また、上部デバイス１２と下部デバイス１
３のデバイスサイズを同じにした場合を示し、しかも上
部デバイス１２と下部デバイス１３の各ボンディングパ
ッド１９を片側、例えば長辺に集めた構造とし、近くに
ボンディングしなければいけない第２内部リード１７を
ＬＯＣタイプとし、第１内部リード１４の引き廻しはＣ
ＯＬタイプとしている。The upper device 12 and the lower device 1
3 shows the case where the device size is the same, and furthermore, the bonding pads 19 of the upper device 12 and the lower device 13 are formed on one side, for example, on the long side, and the second internal lead 17 which must be bonded nearby is provided. LOC type, and the routing of the first internal lead 14 is C
OL type.
【００１５】次に、上記構成による樹脂封止半導体装置
の製造工程について説明する。まず、第１内部リード１
４および第２内部リード１７上に、ボンディング用の金
属被膜１８を形成する。そして、上部デバイス１２と下
部デバイス１３との接着部分に設けられる第１内部リー
ド１４の表面に、第１絶縁性電着樹脂層１５を電着する
と共に、この第１内部リード１４の裏面に、第２絶縁性
電着樹脂層１６を電着する。そして、第２内部リード１
７の裏面に、第２絶縁性電着樹脂層１６を電着する。そ
して、第１内部リード１４を挟んで上部デバイス１２を
第１絶縁性電着樹脂層１５により熱圧着し、下部デバイ
ス１３を第２絶縁性電着樹脂層１６により熱圧着し、第
２内部リード１７を第２絶縁性電着樹脂層１６により下
部デバイスに熱圧着し、例えば８０〜１５０℃で１０〜
３０分で硬化させる。その後、上部デバイス１２および
下部デバイス１３の各ボンディングパッド１９と、第１
内部リード１４および第２内部リード１７の各金属被膜
１８とをボンディングワイヤ２０でボンディングして、
上部デバイス１２と下部デバイス１３とを電気的に導通
する。そして、全体を樹脂７で封止する。Next, the steps of manufacturing the resin-encapsulated semiconductor device having the above-described configuration will be described. First, the first internal lead 1
A metal film 18 for bonding is formed on the fourth and second internal leads 17. Then, a first insulating electrodeposited resin layer 15 is electrodeposited on a surface of the first internal lead 14 provided at a bonding portion between the upper device 12 and the lower device 13, and a back surface of the first internal lead 14 is The second insulating electrodeposited resin layer 16 is electrodeposited. And the second internal lead 1
7, a second insulating electrodeposited resin layer 16 is electrodeposited. Then, the upper device 12 is thermocompression-bonded with the first insulating electrodeposition resin layer 15 with the first internal lead 14 interposed therebetween, and the lower device 13 is thermocompression-bonded with the second insulating electrodeposition resin layer 16. 17 is thermocompression-bonded to the lower device by the second insulating electrodeposition resin layer 16, for example, at 80 to 150 ° C.
Let cure in 30 minutes. Thereafter, each bonding pad 19 of the upper device 12 and the lower device 13 is
Bonding each metal film 18 of the internal lead 14 and the second internal lead 17 with a bonding wire 20
The upper device 12 and the lower device 13 are electrically connected. Then, the whole is sealed with resin 7.
【００１６】なお、上部デバイス１２のボンディングパ
ッド１９へのワイヤボンディングの際、上部デバイス１
２の裏面の受けがないため、上部デバイス１２がクラッ
クを起こし易いので、上部デバイス１２の裏面側で、こ
のボンディングパッド１９に対向する部分には、第１内
部リード１４を引き廻し、上部デバイス１２にクラック
が生じないようにすることも必要である。When wire bonding the upper device 12 to the bonding pad 19, the upper device 1
2, the upper device 12 is liable to crack. Therefore, on the back surface of the upper device 12, the first internal lead 14 is laid around the bonding pad 19, and the upper device 12 is closed. It is also necessary to prevent cracks from occurring in
【００１７】また、図４は上部デバイス２１と下部デバ
イス２２のデバイスサイズを同じにし、各ボンディング
パッド１９を短辺に集めた構造である。FIG. 4 shows a structure in which the upper device 21 and the lower device 22 have the same device size, and the bonding pads 19 are gathered on the short side.
【００１８】また、図５は上部デバイス２３と下部デバ
イス２４のデバイスサイズを同じにし、各ボンディング
パッド１９を短辺および長辺の１辺ずつに集めた構造で
ある。FIG. 5 shows a structure in which the device sizes of the upper device 23 and the lower device 24 are the same, and the bonding pads 19 are collected on one side of the short side and one side of the long side.
【００１９】図６は本発明に係る樹脂封止半導体装置の
第２実施例を示す概略断面図であり、図７は図６の樹脂
を破断した斜視図である。この第２実施例では、上部デ
バイス２５のデバイスサイズに対して、下部デバイスサ
イズ２６のデバイスサイズを大きくした場合を示す。FIG. 6 is a schematic sectional view showing a second embodiment of the resin-sealed semiconductor device according to the present invention, and FIG. 7 is a perspective view in which the resin of FIG. 6 is cut away. In the second embodiment, a case where the device size of the lower device size 26 is made larger than the device size of the upper device 25 is shown.
【００２０】なお、この第２実施例の製造工程について
は、図１と同様であり、その詳細な説明を省略する。The manufacturing steps of the second embodiment are the same as those in FIG. 1, and a detailed description thereof will be omitted.
【００２１】[0021]
【発明の効果】以上詳細に説明したように、本発明によ
れば、上部デバイスと下部デバイスとが、互いの端部が
平面的に異なるように、かつ互いの電極が形成された面
が略同一方向に向くように配置された上で、上部デバイ
ス及び下部デバイスのそれぞれの複数の電極が共に複数
のリードの一方の面に対して接続されているという構成
としたので、１つのパッケージに対する集積度が向上す
る効果がある。As described in detail above, according to the present invention ,
If the upper device and the lower device are
Surfaces that are different from each other in plane and on which electrodes are formed
Are placed so that they face in substantially the same direction.
Multiple electrodes for each of the
Is connected to one surface of the lead of the package, so that the degree of integration in one package is improved.
【図１】本発明に係る樹脂封止半導体装置の第１実施例
を示す断面図である。FIG. 1 is a sectional view showing a first embodiment of a resin-sealed semiconductor device according to the present invention.
【図２】図１における樹脂を破断した斜視図である。FIG. 2 is a perspective view in which the resin in FIG. 1 is cut away.
【図３】図２の一部詳細な斜視図である。FIG. 3 is a partially detailed perspective view of FIG. 2;
【図４】図１におけるボンディングパッドをデバイスの
短辺に設けた場合の斜視図である。FIG. 4 is a perspective view when the bonding pad in FIG. 1 is provided on a short side of the device.
【図５】図１におけるボンディングパッドをデバイスの
短辺および長辺の一辺ずつに設けた場合の斜視図であ
る。FIG. 5 is a perspective view in a case where bonding pads in FIG. 1 are provided on each of a short side and a long side of the device.
【図６】本発明に係る樹脂封止半導体装置の第２実施例
を示す断面図である。FIG. 6 is a sectional view showing a second embodiment of the resin-sealed semiconductor device according to the present invention.
【図７】図６の樹脂を一部破断した斜視図である。FIG. 7 is a perspective view in which the resin of FIG. 6 is partially broken.
【図８】従来の樹脂封止半導体装置を示す断面図であ
る。FIG. 8 is a sectional view showing a conventional resin-sealed semiconductor device.
【図９】従来の他の樹脂封止半導体装置を示す断面図で
ある。FIG. 9 is a sectional view showing another conventional resin-sealed semiconductor device.
１２，２１，２３，２５ 上部デバイス １３，２２，２４，２６ 下部デバイス １４ 第１内部リード １５ 第１絶縁性電着樹脂層 １６ 第２絶縁性電着樹脂層 １７ 第２内部リード 12, 21, 23, 25 Upper device 13, 22, 24, 26 Lower device 14 First internal lead 15 First insulating electrodeposition resin layer 16 Second insulating electrodeposition resin layer 17 Second internal lead
Claims (10)
の主面とを接続する複数の第１ボンディングワイヤと、A plurality of first bonding wires connecting the main surface of 前記下部デバイスの前記複数の電極と前記複数のリードThe plurality of electrodes and the plurality of leads of the lower device
の前記主面とを接続する複数の第２ボンディングワイヤPlurality of second bonding wires connecting to the main surface
と、When, 前記上部及び下部デバイスと、前記第１及び第２ボンデThe upper and lower devices, and the first and second bonds
ィングワイヤとを封止する樹脂とを有しており、And a resin for sealing the 前記上部デバイスと前記下部デバイスとは、前記上部デThe upper device and the lower device are connected to the upper device.
バイスの端部が前記下部デバイスの端部とは平面的に異The end of the vise is planarly different from the end of the lower device.
なるように、かつ前記上部デバイスの複数の電極が形成And a plurality of electrodes of the upper device are formed
された面と前記下部デバイスの複数の電極が形成されたSurface and a plurality of electrodes of the lower device are formed
面とが略同一方向に向くように配置されていることを特It is noted that they are arranged so that
徴とする樹脂封止型半導体装置。A resin-encapsulated semiconductor device.
おいて、And 前記上部デバイスは、前記複数のリード上に第１絶縁性The upper device has a first insulating property on the plurality of leads.
接着樹脂層を介して固定されており、It is fixed via an adhesive resin layer, 前記複数のリードは、前記下部デバイス上に第２の絶縁The plurality of leads may have a second insulation on the lower device.
性接着樹脂層を介して固定されていることを特徴とするCharacterized by being fixed via a conductive adhesive resin layer
樹脂封止型半導体装置。Resin-sealed semiconductor device.
おいて、And 前記上部デバイスと前記下部デバイスとは互いに異なるThe upper device and the lower device are different from each other
大きさを有することを特徴とする樹脂封止型半導体装Resin-sealed type semiconductor device characterized by having a size
置。Place.
た樹脂封止型半導体装置において、Resin-encapsulated semiconductor device, 前記複数のリードの前記主面上の前記第１及び第２ボンThe first and second bonding pads on the main surface of the plurality of leads
ディングワイヤが接続される部分には金属皮膜が設けらThe metal film is provided at the part where the
れていることを特徴とする樹脂封止型半導体装置。A resin-encapsulated semiconductor device, comprising:
数のリードを配置する工程と、Placing a number of leads; 前記複数のリード上に、複数の電極を有する上部デバイAn upper device having a plurality of electrodes on the plurality of leads;
スを配置する工程と、Placing the source, 前記上部デバイスの前記複数の電極と前記複数のリードThe plurality of electrodes and the plurality of leads of the upper device
の主面とを第１ボンディングワイヤによって接続する工For connecting to the main surface of the substrate by a first bonding wire
程と、About 前記下部デバイスの前記複数の電極と前記複数のリードThe plurality of electrodes and the plurality of leads of the lower device
の前記主面とを第２ボンディングワイヤによって接続すIs connected to the main surface by a second bonding wire.
る工程と、Process, 前記上部及び下部デバイスと、前記第１及び第２ボンデThe upper and lower devices, and the first and second bonds
ィングワイヤとを樹脂によって封止する工程とを有するEncapsulating the wiring wire with a resin.
ことを特徴とする樹脂封止型半導体装置の製造方法。A method for manufacturing a resin-encapsulated semiconductor device, comprising:
製造方法において、In the manufacturing method, 前記上部デバイスと前記下部デバイスとは、前記上部デThe upper device and the lower device are connected to the upper device.
バイスの電極形成面と前記下部デバイスの電極形成面とAn electrode forming surface of the vice and an electrode forming surface of the lower device;
が略同一方向に向くように配置されることを特徴とするAre arranged so as to face in substantially the same direction.
樹脂封止型半導体装置の製造方法。A method for manufacturing a resin-sealed semiconductor device.
製造方法において、In the manufacturing method, 前記上部デバイスは、前記複数のリード上に第１絶縁性The upper device has a first insulating property on the plurality of leads.
接着樹脂層を介して固定され、Fixed through an adhesive resin layer, 前記複数のリードは、前記下部デバイス上に第２の絶縁The plurality of leads may have a second insulation on the lower device.
性接着樹脂層を介して固定されることを特徴とする樹脂Characterized in that it is fixed via a conductive adhesive resin layer
封止型半導体装置の製造方法。A method for manufacturing a sealed semiconductor device.
製造方法において、In the manufacturing method, 前記上部デバイスと前記下部デバイスとは互いに異なるThe upper device and the lower device are different from each other
大きさを有することを特徴とする樹脂封止型半導体装置Resin-sealed semiconductor device having a size
の製造方法。Manufacturing method.
製造方法において、In the manufacturing method, 前記上部デバイスと前記下部デバイスとは、前記上部デThe upper device and the lower device are connected to the upper device.
バイスの端部と前記下部デバイスの端部とが平面的に異The end of the device and the end of the lower device are planarly different.
なるように配置されることを特徴とする樹脂封止型半導Characterized by being arranged so as to be
体装置の製造方法。Manufacturing method of body device.
れた樹脂封止型半導体装置の製造方法において、In the method of manufacturing a resin-encapsulated semiconductor device, 前記複数のリードの前記主面上の前記第１及び第２ボンThe first and second bonding pads on the main surface of the plurality of leads
ディングワイヤが接続される部分には金属皮膜が設けらThe metal film is provided at the part where the
れることを特徴とする樹脂封止型半導体装置の製造方Of manufacturing a resin-encapsulated semiconductor device characterized by the following:
法。Law.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP673193A JP3200488B2 (en) | 1993-01-19 | 1993-01-19 | Resin-sealed semiconductor device and method of manufacturing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP673193A JP3200488B2 (en) | 1993-01-19 | 1993-01-19 | Resin-sealed semiconductor device and method of manufacturing the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH06216313A JPH06216313A (en) | 1994-08-05 |
| JP3200488B2 true JP3200488B2 (en) | 2001-08-20 |
Family
ID=11646387
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP673193A Expired - Fee Related JP3200488B2 (en) | 1993-01-19 | 1993-01-19 | Resin-sealed semiconductor device and method of manufacturing the same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3200488B2 (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08181165A (en) * | 1994-12-26 | 1996-07-12 | Nec Kyushu Ltd | Semiconductor integrated circuit |
| JP3768761B2 (en) | 2000-01-31 | 2006-04-19 | 株式会社日立製作所 | Semiconductor device and manufacturing method thereof |
| JP3953327B2 (en) * | 2002-01-21 | 2007-08-08 | Ｎｅｃトーキン株式会社 | Batteries and electric double layer capacitors |
| TWI270194B (en) * | 2004-09-09 | 2007-01-01 | United Test And Assembly Ct S | Multi-die IC package and manufacturing method |
-
1993
- 1993-01-19 JP JP673193A patent/JP3200488B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH06216313A (en) | 1994-08-05 |
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