JP3195251B2 - Plasma processing equipment - Google Patents
Plasma processing equipmentInfo
- Publication number
- JP3195251B2 JP3195251B2 JP24753596A JP24753596A JP3195251B2 JP 3195251 B2 JP3195251 B2 JP 3195251B2 JP 24753596 A JP24753596 A JP 24753596A JP 24753596 A JP24753596 A JP 24753596A JP 3195251 B2 JP3195251 B2 JP 3195251B2
- Authority
- JP
- Japan
- Prior art keywords
- magnetic field
- etching
- wafer
- plasma processing
- sample stage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- Plasma Technology (AREA)
- Drying Of Semiconductors (AREA)
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、プラズマ処理装置
に係り、特にウエハにエッチング等のプラズマ処理を施
す際に、均一なエッチング等の処理を行うのに好適な、
プラズマ処理装置のエッチング等の処理を行うウエハ上
の磁場強度に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a plasma processing apparatus, and more particularly to a plasma processing apparatus suitable for performing uniform processing such as etching when performing plasma processing such as etching on a wafer.
The present invention relates to a magnetic field strength on a wafer on which a process such as etching of a plasma processing apparatus is performed.
【０００２】[0002]
【従来の技術】従来のプラズマ処理装置では、例えば、
エッチング処理室外部からエッチング処理室中に磁場を
供給するための磁場コイルを有するマイクロ波プラズマ
処理装置では、半導体プラズマプロセス技術（菅野卓雄
編著、産業図書発行、（１９８０）、Ｐ１３９）に記
載のように、マイクロ波を伝播する導波管内に石英製の
放電室を有し、放電室外部に配置したコイルより発生し
た磁場とマイクロ波電界の作用により、放電室内でプラ
ズマを生成させるようになっていた。そして、該プラズ
マを利用して半導体ウェハの表面にプラズマ処理を施
す。また、ウエハにエッチング等の処理を行う場合、高
密度のプラズマを有効に使用するため、ウエハを保持す
る試料台は高密度のプラズマ領域（例えばＥＣＲ領域）
に近づけるようにしていた。さらに、エッチング等の処
理を行うウエハ上の磁場に関しては、ウエハへ磁力線が
垂直入射するように設計されており、ウエハ上の磁場強
度に関しては検討されていなかった。2. Description of the Related Art In a conventional plasma processing apparatus, for example,
In a microwave plasma processing apparatus having a magnetic field coil for supplying a magnetic field from the outside of the etching processing chamber into the etching processing chamber, as described in a semiconductor plasma process technology (edited by Takuo Sugano, published by Sangyo Tosho, (1980), P139). In addition, a discharge chamber made of quartz is provided in a waveguide for propagating microwaves, and plasma is generated in the discharge chamber by the action of a magnetic field and a microwave electric field generated from a coil disposed outside the discharge chamber. Was. Then, the surface of the semiconductor wafer is subjected to plasma processing using the plasma. When a process such as etching is performed on a wafer, a high-density plasma is effectively used. Therefore, the sample stage holding the wafer is provided in a high-density plasma region (for example, an ECR region).
Was approaching. Furthermore, the magnetic field on the wafer on which the processing such as etching is performed is designed so that the lines of magnetic force are perpendicularly incident on the wafer, and the strength of the magnetic field on the wafer has not been studied.
【０００３】[0003]
【発明が解決しようとする課題】上記従来技術によるプ
ラズマ処理装置では、エッチング等の処理を行うウエハ
上の磁場強度は検討されておらず、ウエハ中央部と周辺
部のエッチング速度に差が生じることがあった。エッチ
ング速度に差が生じた場合、生成するプラズマ条件を変
化させ、ウエハ中央部で高いプラズマ密度の分布として
いた。その結果、ウエハ中央部と外周部においてエッチ
ング速度に差は生じなくなり、均一なエッチングを行う
ことができる。しかし、エッチングに使用するガスの組
成比を変化させると、プラズマ条件も変化させなければ
ならず、各エッチング条件において最適なプロセス条件
を決めることは困難であった。In the above-described plasma processing apparatus according to the prior art, the strength of the magnetic field on the wafer on which the processing such as etching is performed has not been studied, and a difference occurs in the etching rate between the central part and the peripheral part of the wafer. was there. When there is a difference in the etching rate, the plasma conditions to be generated are changed to obtain a high plasma density distribution at the center of the wafer. As a result, there is no difference in etching rate between the central portion and the outer peripheral portion of the wafer, and uniform etching can be performed. However, when the composition ratio of the gas used for the etching is changed, the plasma conditions also need to be changed, and it has been difficult to determine the optimum process conditions for each etching condition.
【０００４】本発明は、上記従来技術の問題点を解決す
るためになされたもので、プラズマでエッチング等の処
理を行う試料台に保持されたウエハ上の磁場強度を、約
３５０ガウス以下とすることで、ウエハに印加されるＲ
Ｆバイアスの分布を均一にすることを可能としたプラズ
マ処理装置を提供することをその目的としている。The present invention has been made to solve the above-mentioned problems of the prior art, and the magnetic field intensity on a wafer held on a sample stage for performing processing such as etching with plasma is set to about 350 gauss or less. As a result, the R applied to the wafer
It is an object of the present invention to provide a plasma processing apparatus capable of making the distribution of the F bias uniform.
【０００５】[0005]
【課題を解決するための手段】マイクロ波プラズマ処理
装置において、エッチング処理室内のプラズマに磁場を
供給する磁場コイルに流す電流値を制御し、エッチング
等の処理を行うウエハ上の磁場強度を３５０ガウス以下
とした。また、エッチング等の処理を行うウエハ上の磁
場強度を３５０ガウス以下とするためには、磁場コイル
によって生成される磁界や磁力線を決める磁性体の構造
によって可能であり、永久磁石を利用しても可能であ
る。さらに、磁場供給用のコイルによってエッチング処
理室に生成されるＥＣＲ領域（２．４５ＧＨｚのマイク
ロ波であれば８７５ガウス）から距離を離すことでも、
エッチング等の処理を行うウエハ上の磁場強度を３５０
ガウス以下にすることができる。In a microwave plasma processing apparatus, the value of a current flowing through a magnetic field coil for supplying a magnetic field to plasma in an etching processing chamber is controlled so that the magnetic field intensity on a wafer for performing processing such as etching is 350 gauss. It was as follows. Further, in order to reduce the magnetic field strength on the wafer on which the processing such as etching is performed to 350 gauss or less, the magnetic field generated by the magnetic field coil and the structure of the magnetic material that determines the lines of magnetic force are possible. It is possible. Further, the distance from the ECR region (875 gauss in the case of a microwave of 2.45 GHz) generated in the etching chamber by the coil for supplying the magnetic field can be increased.
The magnetic field strength on the wafer to be subjected to etching or the like is set to 350
It can be less than Gaussian.
【０００６】本発明によれば、エッチング等の処理を行
うウエハ上の磁場強度を３５０ガウス以下にしているた
め、試料台に接続されたＲＦ電源によってウエハに印加
されるバイアスの均一性を向上することが可能となる。
その結果、当初目的としていたウエハ全体に、均一なエ
ッチング等の処理を行うことが可能となる。According to the present invention, since the magnetic field intensity on the wafer on which the processing such as etching is performed is 350 gauss or less, the uniformity of the bias applied to the wafer by the RF power supply connected to the sample stage is improved. It becomes possible.
As a result, processing such as uniform etching can be performed on the entire target wafer at the beginning.
【０００７】本発明にかかるマイクロ波プラズマ処理装
置では、エッチング処理室内のプラズマに磁場を供給す
る磁場コイルに流す電流値を制御する、磁場コイルによ
って生成される磁界や磁力線を制御する磁性体の構造に
よっても制御する、永久磁石を利用して制御する、試料
台をＥＣＲ領域から離すことで、エッチング等の処理を
行うウエハ上の磁場強度を３５０ガウス以下にすること
ができる。その結果、ウエハに印加するＲＦバイアスの
均一性を向上することが可能となり、ウエハ全体を均一
にエッチングするという目的は達成される。[0007] In the microwave plasma processing apparatus according to the present invention, the structure of the magnetic body for controlling the value of the current flowing through the magnetic field coil for supplying the magnetic field to the plasma in the etching processing chamber and for controlling the magnetic field and the lines of magnetic force generated by the magnetic field coil. The magnetic field intensity on the wafer on which the processing such as etching is performed can be reduced to 350 gauss or less by controlling the sample table from the ECR region by controlling using a permanent magnet. As a result, the uniformity of the RF bias applied to the wafer can be improved, and the object of uniformly etching the entire wafer can be achieved.
【０００８】[0008]
【発明の実施の形態】以下、本発明の実施例を図１から
図４用いて説明する。まず図１は、本発明のマイクロ波
プラズマ処理装置の縦断面図である。１はマグネトロン
でありマイクロ波の発振源である。２はマイクロ波の導
波管であり５は空気層である。４はエッチング処理室で
あり、例えばアルミ合金で作られ、内面は対プラズマ性
能向上のための表面処理が施されている。また、エッチ
ング処理室外部は導電体であるため、マイクロ波の導波
管の役目もしている。６及び７はエッチング処理室４に
磁場を供給する磁場供給用コイルＡ及びＢである。８は
真空ポンプであり、エッチング処理室４接続されて真空
排気される。３はエッチング処理室４を真空封止しなが
らマイクロ波をエッチング処理室４に供給するための石
英板である。９はプラズマ処理を行なうウェハ１０を支
持する試料台であり、バイアス用電源、例えばＲＦ電源
１２が接続できるようになっている。１３はエッチング
処理室４内にエッチング、成膜等の処理を行なうガスを
供給するガス供給系である。図１では４のエッチング処
理室外周に、エッチング処理室４に磁場を供給する磁場
供給用コイルＡ６及びＢ７に流す電流とは逆向きの電流
を流すことが可能な磁場供給コイルＣ１４を配置した１
例である。この図１において、エッチング処理室４に磁
場を供給する磁場供給用コイルＡ６及びＢ７によって生
成された磁界はエッチング処理室内に生成するが、逆向
きの電流を流した磁場供給用コイル１４によって、エッ
チング等の処理を行うウエハ１０上の磁場強度を３５０
ガウス以下にすることができる。DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to FIGS. First, FIG. 1 is a longitudinal sectional view of the microwave plasma processing apparatus of the present invention. Reference numeral 1 denotes a magnetron, which is a microwave oscillation source. 2 is a microwave waveguide, and 5 is an air layer. Reference numeral 4 denotes an etching chamber, which is made of, for example, an aluminum alloy, and has an inner surface subjected to a surface treatment for improving plasma performance. Since the outside of the etching chamber is a conductor, it also serves as a microwave waveguide. Numerals 6 and 7 are magnetic field supply coils A and B for supplying a magnetic field to the etching chamber 4. A vacuum pump 8 is connected to the etching chamber 4 and evacuated. Reference numeral 3 denotes a quartz plate for supplying microwaves to the etching processing chamber 4 while vacuum-sealing the etching processing chamber 4. Reference numeral 9 denotes a sample stage that supports a wafer 10 on which plasma processing is to be performed. The sample stage 9 can be connected to a bias power supply, for example, an RF power supply 12. Reference numeral 13 denotes a gas supply system that supplies a gas for performing processing such as etching and film formation into the etching processing chamber 4. In FIG. 1, a magnetic field supply coil C14 capable of supplying a current in the opposite direction to the current supplied to the magnetic field supply coils A6 and B7 for supplying a magnetic field to the etching processing chamber 4 is arranged around the etching processing chamber 4.
It is an example. In FIG. 1, the magnetic field generated by the magnetic field supply coils A6 and B7 for supplying a magnetic field to the etching processing chamber 4 is generated in the etching processing chamber. The intensity of the magnetic field on the wafer 10 to be processed
It can be less than Gaussian.
【０００９】図２に、プラズマ処理を行なうウェハ１０
を支持する試料台９内に磁場供給用コイル１５を配置し
た実施例を示す。この磁場供給用コイルＤ１５によっ
て、エッチング等の処理を行うウエハ１０上の磁場強度
を３５０ガウス以下にすることができる。FIG. 2 shows a wafer 10 to be subjected to plasma processing.
An embodiment in which a magnetic field supply coil 15 is arranged in a sample table 9 supporting the above-described embodiment will be described. With the magnetic field supply coil D15, the magnetic field intensity on the wafer 10 on which processing such as etching is performed can be reduced to 350 gauss or less.
【００１０】図３は、プラズマ生成部（ＥＣＲ領域）か
らエッチング等の処理を行うウエハ１０を保持した試料
台９を離した例である、この距離を離すためにはエッチ
ング処理室４の構造を変える方法やスペーサ１６を挿入
する方法等がある。このような構造とすることで、エッ
チング等の処理を行うウエハ１０上の磁場強度を３５０
ガウス以下にすることができる。FIG. 3 shows an example in which a sample stage 9 holding a wafer 10 for performing processing such as etching is separated from a plasma generating section (ECR region). In order to increase the distance, the structure of the etching processing chamber 4 must be changed. There are a method of changing the method, a method of inserting the spacer 16, and the like. With such a structure, the magnetic field intensity on the wafer 10 on which processing such as etching is
It can be less than Gaussian.
【００１１】図４は、実際に８インチウエハをエッチン
グした例である。横軸はエッチング等の処理を行うウエ
ハ中央からの距離であり、縦軸はエッチング速度であ
る。ウエハ上の磁場強度が３５０ガウス以上の場合は、
ウエハ中央部のエッチング速度が低くなり、ウエハに印
加するＲＦバイアスの均一性が良くないと考えられる。
しかし、ウエハ上の磁場強度を３５０ガウス以下にする
と、ウエハ中央部のエッチング速度も上昇し、ウエハ全
体のエッチング速度分布は向上している。FIG. 4 shows an example in which an 8-inch wafer is actually etched. The horizontal axis represents the distance from the center of the wafer where the processing such as etching is performed, and the vertical axis represents the etching rate. If the magnetic field strength on the wafer is 350 gauss or more,
It is considered that the etching rate at the central portion of the wafer becomes low, and the uniformity of the RF bias applied to the wafer is not good.
However, when the magnetic field intensity on the wafer is set to 350 gauss or less, the etching rate at the central portion of the wafer also increases, and the etching rate distribution of the entire wafer is improved.
【００１２】[0012]
【発明の効果】本発明は、以上説明したように構成され
ているので以下に記載されるような効果を奏する。プラ
ズマ処理装置において、エッチング等の処理を行うウエ
ハ上の磁場強度を３５０ガウス以上とすることで、ウエ
ハ全体のエッチング速度の分布を向上することが可能と
なり、ウエハのエッチング速度の均一性を向上させると
いう目的は達成される。Since the present invention is configured as described above, it has the following effects. In a plasma processing apparatus, by setting the magnetic field strength on a wafer to be subjected to processing such as etching to 350 gauss or more, the distribution of the etching rate of the entire wafer can be improved, and the uniformity of the etching rate of the wafer can be improved. The goal is achieved.
【図１】本発明の実施例のプラズマ処理装置の構成図。FIG. 1 is a configuration diagram of a plasma processing apparatus according to an embodiment of the present invention.
【図２】本発明の第２の実施例のプラズマ処理装置の構
成図。FIG. 2 is a configuration diagram of a plasma processing apparatus according to a second embodiment of the present invention.
【図３】本発明の第２の実施例のプラズマ処理装置の構
成図。FIG. 3 is a configuration diagram of a plasma processing apparatus according to a second embodiment of the present invention.
【図４】本発明の実施例で得られたエッチング速度の分
布。FIG. 4 is a distribution of etching rates obtained in an example of the present invention.
１…マグネトロン、２…導波管、３…石英板、４…エッ
チング処理室、５…空気層、６…磁場供給用コイルＡ、
７…磁場供給用コイルＢ、８…真空ポンプ、９…試料
台、１０…ウエハ、１２…ＲＦ電源、１３…ガス供給
系、１４…磁場供給用コイルＣ、１５…磁場供給用コイ
ルＤ、１６…スペーサ。DESCRIPTION OF SYMBOLS 1 ... Magnetron, 2 ... Waveguide, 3 ... Quartz plate, 4 ... Etching processing chamber, 5 ... Air layer, 6 ... Magnetic field supply coil A,
7: magnetic field supply coil B, 8: vacuum pump, 9: sample stage, 10: wafer, 12: RF power supply, 13: gas supply system, 14: magnetic field supply coil C, 15: magnetic field supply coil D, 16 …Spacer.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 田村 仁 茨城県土浦市神立町502番地 株式会社 日立製作所 機械研究所内 (56)参考文献 特開 平６−120170（ＪＰ，Ａ) (58)調査した分野(Int.Cl.7，ＤＢ名) H05H 1/46 H01L 21/3065 ────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Jin Tamura 502 Kandachi-cho, Tsuchiura-shi, Ibaraki Pref. Machinery Research Laboratory, Hitachi, Ltd. (56) References JP-A-6-120170 (JP, A) (58) Field (Int.Cl. 7 , DB name) H05H 1/46 H01L 21/3065
Claims (3)
ング処理室と、エッチング処理室に第１方向の磁場を供
給して試料台上部にＥＣＲ領域を形成する磁場供給用コ
イルおよびエッチング処理室に第１方向とは逆方向の磁
場を供給して前記磁場供給用コイルにより形成された試
料台上の磁場を減磁する逆磁場供給用コイルからなる磁
場供給装置と、エッチング処理室にガスを供給するガス
供給装置と、プラズマ処理を施すウエハを保持する試料
台と、試料台上に支持されたウエハに高周波を印加する
装置と、真空排気装置より成るプラズマ処理装置におい
て、エッチング等の処理を行うウエハ上の磁場強度を３
５０ガウス以下としたことを特徴とするプラズマ処理装
置。A plasma generator, an etching chamber capable of reducing pressure, and a magnetic field in a first direction are supplied to the etching chamber.
Magnetic field supply core to supply an ECR region on the sample stage
Magnetic field in the direction opposite to the first direction
A field formed by the magnetic field supply coil.
Magnetic field consisting of a reverse magnetic field supply coil that demagnetizes the magnetic field on the platform
A field supply device , a gas supply device for supplying a gas to the etching processing chamber, a sample table for holding a wafer to be subjected to plasma processing, a device for applying a high frequency to a wafer supported on the sample table, and a vacuum exhaust device. In the plasma processing apparatus, the magnetic field intensity on the wafer for performing the processing such as etching is set to 3
A plasma processing apparatus characterized in that the pressure is 50 gauss or less.
能なエッチング処理室と、エッチング処理室中に磁場を
供給するコイルからなる磁場供給装置と、エッチング処
理室にガスを供給するガス供給装置と、プラズマ処理を
施すウエハを保持する試料台と、試料台上に支持された
ウエハに高周波を印加する装置と、真空排気装置より成
るプラズマ処理装置において、エッチング等の処理を行
うウエハを保持する試料台に磁場コイルを設け、エッチ
ング処理室外周部の磁場供給用のコイルに流す電流とは
逆向きの電流を流し、エッチング等の処理を行うウエハ
上の磁場強度を３５０ガウス以下としたことを特徴とす
るマイクロ波プラズマ処理装置。2. A microwave plasma generator and a decompression device.
And a magnetic field in the etching chamber
A magnetic field supply device consisting of a supply coil and an etching process
A gas supply device that supplies gas to the science room and a plasma process
A sample stage holding a wafer to be applied, and a sample stage supported on the sample stage
It consists of a device that applies high frequency to the wafer and a vacuum exhaust device.
In a plasma processing apparatus, processing such as etching is performed.
A magnetic field coil is installed on the sample stage that holds the wafer
Is the current flowing through the magnetic field supply coil on the outer periphery of the
Wafers to which currents are applied in the opposite direction to perform processing such as etching
Characterized in that the upper magnetic field strength is 350 gauss or less.
Microwave plasma processing equipment .
なエッチング処理室と、エッチング処理室中に磁場を供
給するコイルからなる磁場供給装置と、エッチング処理
室にガスを供給するガス供給装置と、プラズマ処理を施
すウエハを保持する試料台と、試料台上に支持されたウ
エハに高周波を印加する装置と、真空排気装置より成る
プラズマ処理装置において、エッチング等の処理を行う
ウエハを保持する試料台に永久磁石を設け、ウエハ上の
磁場強度を３５０ガウス以下としたことを特徴とするプ
ラズマ処理装置。3. A microwave plasma generator and a decompressible device
And a magnetic field in the etching chamber.
Magnetic field supply device consisting of coils to be supplied and etching process
Gas supply device for supplying gas to the chamber and plasma processing
A sample stage for holding a wafer, and a wafer supported on the sample stage.
Consists of a device that applies high frequency to EHA and a vacuum exhaust device
Performing processing such as etching in a plasma processing apparatus
A permanent magnet is provided on the sample stage that holds the wafer,
A magnetic field strength of 350 gauss or less.
Plasma processing equipment .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24753596A JP3195251B2 (en) | 1996-09-19 | 1996-09-19 | Plasma processing equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24753596A JP3195251B2 (en) | 1996-09-19 | 1996-09-19 | Plasma processing equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH1092600A JPH1092600A (en) | 1998-04-10 |
| JP3195251B2 true JP3195251B2 (en) | 2001-08-06 |
Family
ID=17164949
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP24753596A Expired - Fee Related JP3195251B2 (en) | 1996-09-19 | 1996-09-19 | Plasma processing equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3195251B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101948986B1 (en) * | 2016-11-24 | 2019-02-15 | 부경대학교 산학협력단 | Parabola reflector lantern for lighthouse by using a led |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100620178B1 (en) * | 2001-08-10 | 2006-09-04 | 동부일렉트로닉스 주식회사 | Method for removing by product of plasma etching apparatus |
-
1996
- 1996-09-19 JP JP24753596A patent/JP3195251B2/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101948986B1 (en) * | 2016-11-24 | 2019-02-15 | 부경대학교 산학협력단 | Parabola reflector lantern for lighthouse by using a led |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH1092600A (en) | 1998-04-10 |
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