JP3166850B2 - Low temperature fired glass ceramics and method for producing the same - Google Patents
Low temperature fired glass ceramics and method for producing the sameInfo
- Publication number
- JP3166850B2 JP3166850B2 JP13414799A JP13414799A JP3166850B2 JP 3166850 B2 JP3166850 B2 JP 3166850B2 JP 13414799 A JP13414799 A JP 13414799A JP 13414799 A JP13414799 A JP 13414799A JP 3166850 B2 JP3166850 B2 JP 3166850B2
- Authority
- JP
- Japan
- Prior art keywords
- weight
- sio
- glass
- low
- firing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C10/00—Devitrified glass ceramics, i.e. glass ceramics having a crystalline phase dispersed in a glassy phase and constituting at least 50% by weight of the total composition
- C03C10/0036—Devitrified glass ceramics, i.e. glass ceramics having a crystalline phase dispersed in a glassy phase and constituting at least 50% by weight of the total composition containing SiO2, Al2O3 and a divalent metal oxide as main constituents
- C03C10/0045—Devitrified glass ceramics, i.e. glass ceramics having a crystalline phase dispersed in a glassy phase and constituting at least 50% by weight of the total composition containing SiO2, Al2O3 and a divalent metal oxide as main constituents containing SiO2, Al2O3 and MgO as main constituents
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C10/00—Devitrified glass ceramics, i.e. glass ceramics having a crystalline phase dispersed in a glassy phase and constituting at least 50% by weight of the total composition
- C03C10/0036—Devitrified glass ceramics, i.e. glass ceramics having a crystalline phase dispersed in a glassy phase and constituting at least 50% by weight of the total composition containing SiO2, Al2O3 and a divalent metal oxide as main constituents
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C14/00—Glass compositions containing a non-glass component, e.g. compositions containing fibres, filaments, whiskers, platelets, or the like, dispersed in a glass matrix
- C03C14/004—Glass compositions containing a non-glass component, e.g. compositions containing fibres, filaments, whiskers, platelets, or the like, dispersed in a glass matrix the non-glass component being in the form of particles or flakes
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
- C03C8/14—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2214/00—Nature of the non-vitreous component
- C03C2214/20—Glass-ceramics matrix
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、低抵抗導体である
Ａｕ、ＡｇやＣｕ等と同時焼成が可能な低温焼成無機組
成物に関するものであり、特にマイクロ波及びミリ波帯
領域の周波数において低い誘電率及び低い誘電損失を有
し、マイクロ波及びミリ波回路用多層配線基板の絶縁層
として好適な低温焼成ガラスセラミックスに関するもの
である。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a low-temperature fired inorganic composition which can be fired simultaneously with low-resistance conductors such as Au, Ag, and Cu. The present invention relates to a low-temperature fired glass ceramic having a dielectric constant and a low dielectric loss and suitable as an insulating layer of a multilayer wiring board for microwave and millimeter wave circuits.
【０００２】[0002]
【従来の技術】低温焼成ガラスセラミックス多層配線基
板は、配線の多層化、微細配線による高密度化、小型化
が可能であり、低抵抗であるＡｕ、ＡｇやＣｕといった
導体を配線材料に選択でき、絶縁層の低誘電率化によっ
て信号伝播の高速化が可能なこと等から、電子機器の高
性能化に有効な手段として開発が進められてきた。更
に、キャビティ構造やヴィアホールの高密度配置による
高周波アナログ回路の電磁気的シールドが可能であるこ
とから、複数のＭＭＩＣを実装したモジュールの小型
化、高性能化が可能であり、マイクロ波帯領域の高周波
アナログ回路を含む通信機器モジュール等の開発が行わ
れてきた。2. Description of the Related Art A low-temperature fired glass-ceramic multilayer wiring board is capable of multi-layer wiring, high-density wiring, and miniaturization by fine wiring, and is capable of selecting a conductor having low resistance, such as Au, Ag, or Cu, as a wiring material. Since signal propagation can be accelerated by lowering the dielectric constant of the insulating layer, development has been promoted as an effective means for improving the performance of electronic devices. Furthermore, since the high-frequency analog circuit can be electromagnetically shielded by the cavity structure and the high-density arrangement of via holes, it is possible to reduce the size and performance of the module in which a plurality of MMICs are mounted. Development of communication equipment modules including high-frequency analog circuits has been carried out.
【０００３】[0003]
【発明が解決しようとする課題】高周波アナログ回路を
含む通信機器の分野においては、マイクロ波領域ばかり
ではなく更に高周波領域であるミリ波帯のシステム利用
が期待されてきている。このような超高周波領域のアナ
ログ回路を搭載するモジュールにおいては、信号の伝送
損失を抑えることが必須であり、したがって、ガラスセ
ラミックス多層配線基板には、絶縁層材料の更なる低誘
電損失化、導体材料の低抵抗化が求められている。In the field of communication equipment including high-frequency analog circuits, use of systems in the millimeter-wave band, which is not only the microwave region but also in the high-frequency region, has been expected. In a module equipped with an analog circuit in such an ultra-high frequency range, it is essential to suppress signal transmission loss. Therefore, a glass ceramic multilayer wiring board is required to further reduce the dielectric loss of the insulating layer material and to reduce the conductor loss. There is a demand for low resistance materials.
【０００４】本発明の目的は、１０００℃以下の温度で
焼成可能、すなわちＡｕ、Ａｇ、Ｃｕといった低抵抗導
体の同時焼成による内装化、多層化が可能であり、マイ
クロ波及びミリ波領域の周波数において低誘電率かつ低
誘電損失の高周波アナログ回路搭載用多層配線基板の絶
縁層に好適な低温焼成ガラスセラミックスを提供するこ
とにある。An object of the present invention is to enable firing at a temperature of 1000 ° C. or lower, that is, simultaneous firing of low-resistance conductors such as Au, Ag, and Cu for interiorization and multi-layering, and for frequencies in the microwave and millimeter wave regions. Another object of the present invention is to provide a low-temperature fired glass ceramic suitable for an insulating layer of a multilayer wiring board for mounting a high-frequency analog circuit having a low dielectric constant and a low dielectric loss.
【０００５】[0005]
【課題を解決するための手段】本発明者等は、従来の低
温焼成ガラスセラミックスにおける上記課題を解決する
為に、種々のガラス組成の検討を行った結果、ＳｉＯ２
−ＣａＯ−Ａｌ２Ｏ３系ガラスは、一定組成範囲におい
て、各種セラミックスとの複合体乃至は単体で、１００
０℃以下の焼成温度で焼結可能であるとともに、焼成過
程で結晶化して低誘電率、低誘電損失を示すことを見い
だした。The present inventors have SUMMARY OF THE INVENTION As a result of in order to solve the above problems of the conventional low-temperature firing glass-ceramic was investigated of various glass compositions, SiO 2
-CaO-Al 2 O 3 based glass in certain composition range, a complex with various ceramics or by itself, 100
It has been found that sintering can be carried out at a firing temperature of 0 ° C. or less, and that the crystallization takes place during the firing process to show a low dielectric constant and a low dielectric loss.
【０００６】すなわち、本発明の要旨とするところは、
（１） 酸化物換算にしてＳｉＯ２１０〜４５重量％、
ＣａＯ２０〜５０重量％、Ａｌ２Ｏ３２０〜４５重量
％、ＭｇＯ０．１〜５重量％、ＳｒＯ０．１〜５重量
％、ＢａＯ０．１〜５重量％、ＴｉＯ２０．１〜５重量
％、ＺｎＯ０．１〜５重量％、ＺｒＯ２０．１〜５重量
％、及び１Ａ族元素酸化物０〜３重量％からなる組成を
有するＳｉＯ２−ＣａＯ−Ａｌ２Ｏ３系ガラスであっ
て、８００〜１０００℃の焼成温度の焼成過程において
緻密化することを特徴とする低温焼成ガラスセラミック
ス、（２） ＳｉＯ２−ＣａＯ−Ａｌ２Ｏ３系ガラス中
にセラミックス粒子が分散した複合体であって、該ガラ
スが酸化物換算にしてＳｉＯ２１０〜４５重量％、Ｃａ
Ｏ２０〜５０重量％、Ａｌ２Ｏ３２０〜４５重量％、Ｍ
ｇＯ０．１〜５重量％、ＳｒＯ０．１〜５重量％、Ｂａ
Ｏ０．１〜５重量％、ＴｉＯ２０．１〜５重量％、Ｚｎ
Ｏ０．１〜５重量％、ＺｒＯ２０．１〜５重量％、及び
１Ａ族元素酸化物０〜３重量％からなる組成を有すると
ともに、８００〜１０００℃の焼成温度の焼成過程にお
いて緻密化することを特徴とする低温焼成ガラスセラミ
ックス、（３） 前記１Ａ族元素酸化物が、Ｎａ２Ｏ、
Ｋ２Ｏ、及びＬｉ２Ｏから選ばれる１種類以上であるこ
とを特徴とする、上記（１）項又は（２）項に記載の低
温焼成ガラスセラミックス、（４） 前記複合体中の前
記セラミックス粒子の比率が、重量比率にして１０〜５
０重量％であることを特徴とする、上記（２）項又は
（３）項に記載の低温焼成ガラスセラミックス、（５）
前記セラミックス粒子が、Ａｌ２Ｏ３（Alumina）、
ＳｉＯ２（Silica）、Ｍｇ２Ａｌ４Ｓｉ５Ｏ１８（Cord
ierite）、Ｍｇ２ＳｉＯ４（Forsterite）及びＡｌ６Ｓ
ｉ２Ｏ１３（Mullite）から選ばれる１種類以上である
ことを特徴とする、上記（２）、（３）乃至（４）項の
いずれか１項に記載の低温焼成ガラスセラミックス、
（６） 前記焼成過程においてＣａＡｌ２ＳｉＯ６、Ｃ
ａ３Ｓｉ２Ｏ７（Rankinite）、ＣａＳｉＯ３（Wollast
onite）、及びＡｌ６Ｓｉ２Ｏ１３（Mullite）のうち、
いずれか１種類以上の結晶が析出することを特徴とす
る、上記（１）、（２）、（３）、（４）乃至（５）項
のいずれか１項に記載の低温焼成ガラスセラミックス、
（７） （Ａ）重量百分率で、ＳｉＯ２ーＣａＯ―Ａｌ
２Ｏ３系ガラス粉末５０〜１００重量％、セラミックス
粉末０〜５０重量％からなる混合粉末よりグリーンシー
トを作製する成膜工程と、（Ｂ）前記グリーンシートを
積層して、熱プレスすることにより一体化する積層工程
と、（Ｃ）前記積層工程を経て得られた積層体を８００
〜１０００℃の温度範囲で焼成して焼結体を作製する焼
成工程とを有する低温焼成ガラスセラミックスの製造方
法であって、該ガラスが酸化物換算にしてＳｉＯ２１０
〜４５重量％、ＣａＯ２０〜５０重量％、Ａｌ２Ｏ３２
０〜４５重量％、ＭｇＯ０．１〜５重量％、ＳｒＯ０．
１〜５重量％、ＢａＯ０．１〜５重量％、ＴｉＯ２０．
１〜５重量％、ＺｎＯ０．１〜５重量％、ＺｒＯ２０．
１〜５重量％、及び１Ａ族元素酸化物０〜３重量％から
なる組成を有することを特徴とする低温焼成ガラスセラ
ミックスの製造方法、（８） 前記１Ａ族元素酸化物
が、Ｎａ２Ｏ、Ｋ２Ｏ、及びＬｉ２Ｏから選ばれる１種
類以上であることを特徴とする、上記（７）項に記載の
低温焼成ガラスセラミックスの製造方法、（９） 前記
セラミックス粒子が、Ａｌ２Ｏ３（Alumina）、ＳｉＯ
２（Silica）、Ｍｇ２Ａｌ４Ｓｉ５Ｏ１８（Cordierit
e）、Ｍｇ２ＳｉＯ４（Forsterite）、ＣａＡｌ２Ｓｉ
Ｏ７、Ｃａ３Ｓｉ２Ｏ７（Rankinite）、ＣａＳｉＯ３
（Wollastonite）、及びＡｌ６Ｓｉ２Ｏ１３（Mullit
e）から選ばれる１種類以上であることを特徴とする、
上記（７）又は（８）項に記載の低温焼成ガラスセラミ
ックスの製造方法、（１０） 前記焼成工程においてＣ
ａＡｌ２ＳｉＯ６、Ｃａ３Ｓｉ２Ｏ７（Rankinite）、
ＣａＳｉＯ３（Wollastonite）、及びＡｌ６Ｓｉ２Ｏ
１３（Mullite）のうち、いずれか１種類以上の結晶が
析出することを特徴とする、上記（７）、（８）乃至
（９）項ののいずれか１項に記載の低温焼成ガラスセラ
ミックスの製造方法、にある。That is, the gist of the present invention is as follows.
(1) 10 to 45% by weight of SiO 2 in terms of oxide;
CaO20~50 wt%, Al 2 O 3 20 to 45 wt%, MgO0.1～5 wt%, SrO0.1～5 wt%, BaO0.1～5 wt%, TiO 2 0.1 to 5% by weight, ZnO0.1~5 wt%, a SiO 2 -CaO-Al 2 O 3 based glass having ZrO 2 0.1 to 5 wt%, and a composition comprising a group 1A element oxide 0-3% by weight, 800 low-temperature firing glass-ceramic, characterized in that the densification in the firing process of firing temperature to 1000 ° C., a composite ceramic particles are dispersed in (2) SiO 2 -CaO-Al 2 O 3 based glass, The glass is 10 to 45% by weight of SiO 2 in terms of oxide, Ca
O 20 to 50% by weight, Al 2 O 3 20 to 45% by weight, M
gO 0.1-5% by weight, SrO 0.1-5% by weight, Ba
O 0.1-5% by weight, TiO 2 0.1-5% by weight, Zn
O0.1~5 wt%, ZrO 2 0.1 to 5 wt%, and which has a composition consisting of Group 1A element oxide 0-3% by weight, densification in the firing process of firing temperature 800 to 1000 ° C. (3) the group 1A element oxide is Na 2 O,
The low-temperature fired glass ceramic according to the above item (1) or (2), wherein the ceramic is at least one selected from K 2 O and Li 2 O, (4) the ceramic in the composite The ratio of the particles is 10 to 5 by weight.
(5) the low-temperature fired glass ceramic according to the above (2) or (3), which is 0% by weight.
The ceramic particles are Al 2 O 3 (Alumina),
SiO 2 (Silica), Mg 2 Al 4 Si 5 O 18 (Cord
ierite), Mg 2 SiO 4 (Forsterite) and Al 6 S
The low-temperature fired glass ceramic according to any one of the above (2), (3) to (4), wherein the glass ceramic is at least one selected from i 2 O 13 (Mullite).
(6) CaAl 2 SiO 6 , C
a 3 Si 2 O 7 (Rankinite), CaSiO 3 (Wollast
onite) and Al 6 Si 2 O 13 (Mullite)
The low-temperature fired glass ceramic according to any one of the above (1), (2), (3), (4) to (5), wherein one or more types of crystals are precipitated.
(7) (A) SiO 2 —CaO—Al in weight percentage
A film forming step of producing a green sheet from a mixed powder composed of 50 to 100% by weight of 2 O 3 glass powder and 0 to 50% by weight of a ceramic powder; and (B) laminating the green sheets and hot pressing. (C) laminating the laminated body obtained through the laminating step to 800
A method of manufacturing a low-temperature firing glass-ceramic having a firing step of preparing a baked sintered body in a temperature range of ~1000 ℃, SiO 2 10 the glass is in the oxide equivalent
45 wt%, CaO20~50 wt%, Al 2 O 3 2
0 to 45% by weight, 0.1 to 5% by weight of MgO, 0.
1 to 5% by weight, 0.1 to 5% by weight of BaO, TiO 2 .
1 to 5% by weight, ZnO 0.1 to 5% by weight, ZrO 2 0.
1 to 5% by weight, and a method of manufacturing low-temperature firing glass-ceramics and having a composition consisting of Group 1A element oxide 0-3% by weight, (8) the Group 1A element oxides, Na 2 O, and characterized in that K 2 O, and one or more selected from Li 2 O, (7) the method of manufacturing low-temperature firing glass-ceramic according to terms, (9) the ceramic particles, Al 2 O 3 (Alumina), SiO
2 (Silica), Mg 2 Al 4 Si 5 O 18 (Cordierit
e), Mg 2 SiO 4 (Forsterite), CaAl 2 Si
O 7 , Ca 3 Si 2 O 7 (Rankinite), CaSiO 3
(Wollastonite), and Al 6 Si 2 O 13 (Mullit
e) one or more types selected from the group consisting of:
(7) The method for producing a low-temperature fired glass ceramic according to the above (7) or (8), (10) In the firing step, C is used.
aAl 2 SiO 6 , Ca 3 Si 2 O 7 (Rankinite),
CaSiO 3 (Wollastonite) and Al 6 Si 2 O
13 (Mullite), wherein one or more kinds of crystals are precipitated, and the low-temperature fired glass ceramics according to any one of the above (7), (8) to (9) is characterized in that Manufacturing method.
【０００７】本発明の低温焼成ガラスセラミックスによ
れば、低抵抗導体を配線材料とする高周波特性に優れた
多層配線基板を得ることが可能となる。According to the low-temperature fired glass ceramics of the present invention, it is possible to obtain a multilayer wiring board excellent in high frequency characteristics using a low-resistance conductor as a wiring material.
【０００８】[0008]
【発明の実施形態】本発明の低温焼成ガラスセラミック
スは、酸化物換算にしてＳｉＯ２１０〜４５重量％、Ｃ
ａＯ２０〜５０重量％、Ａｌ２Ｏ３２０〜４５重量％、
ＭｇＯ０．１〜５重量％、ＳｒＯ０．１〜５重量％、Ｂ
ａＯ０．１〜５重量％、ＴｉＯ２０．１〜５重量％、Ｚ
ｎＯ０．１〜５重量％、ＺｒＯ２０．１〜５重量％及び
１Ａ族元素酸化物０〜３重量％からなる組成を有するＳ
ｉＯ２−ＣａＯ−Ａｌ２Ｏ３系ガラス乃至は上記ガラス
にセラミックス粒子が分散した複合体からなることを特
徴とする。該組成のＳｉＯ２−ＣａＯ−Ａｌ２Ｏ３系ガ
ラスは単体乃至はセラミックス粒子との複合体で８００
〜１０００℃の温度において焼成が可能であり、Ａｕ、
Ａｇ、Ｃｕといった低融点低抵抗導体を内層配線材料と
する多層配線基板を作製することが可能となる。また、
該組成のＳｉＯ２−ＣａＯ−Ａｌ２Ｏ３系ガラスは低い
誘電率と低誘電損失である特性を併せ持ち、高周波回路
搭載用多層配線基板の絶縁層には好適である。BEST MODE FOR CARRYING OUT THE INVENTION The low-temperature fired glass ceramic of the present invention has a SiO 2 content of 10 to 45% by weight,
aO20~50 wt%, Al 2 O 3 20 to 45 wt%,
MgO 0.1-5% by weight, SrO 0.1-5% by weight, B
aO 0.1 to 5% by weight, TiO 2 0.1 to 5% by weight, Z
nO0.1~5 wt%, S having a composition consisting of ZrO 2 0.1 to 5 wt% and a Group 1A element oxide 0-3 wt%
iO 2 -CaO-Al 2 O 3 based glass or is characterized by comprising a composite ceramic particles are dispersed in the glass. The SiO 2 —CaO—Al 2 O 3 system glass having the composition is 800 alone or in a composite with ceramic particles.
It can be fired at a temperature of １０００1000 ° C., and Au,
It is possible to manufacture a multilayer wiring board using a low-melting-point low-resistance conductor such as Ag or Cu as an inner wiring material. Also,
The SiO 2 —CaO—Al 2 O 3 system glass having this composition has both low dielectric constant and low dielectric loss characteristics, and is suitable for an insulating layer of a multilayer wiring board for mounting a high-frequency circuit.
【０００９】更に組成について詳しく述べる。該組成の
ガラスは前述の組成範囲において１０００℃以下の温度
での焼成が可能となるが、特にＭｇＯ、ＳｒＯ、Ｂａ
Ｏ、ＴｉＯ２、ＺｎＯ及びＺｒＯ２をそれぞれ０．１〜
５重量％添加すると軟化点が低くなり、焼成可能な温度
域が低くなり、低温焼成には好適である。しかしなが
ら、これらの多量な添加は本発明の低温焼成ガラスセラ
ミックスの一つの特徴である低誘電損失を損ない、誘電
損失を増大させることになる。従って、その添加量はそ
れぞれ５重量％以下である必要がある。一方、添加量を
少なくすると焼成可能な温度が高くなり、１０００℃以
下の焼成を困難にする。従って、その添加は０．１重量
％以上が必要である。特に、０．５重量％以上２重量％
以下の添加は、焼成可能な温度を９００℃前後とするこ
とが可能となり、好適である。Further, the composition will be described in detail. Glass having this composition can be fired at a temperature of 1000 ° C. or less in the above-mentioned composition range, and in particular, MgO, SrO, Ba
0.1~ O, TiO 2, ZnO and ZrO 2, respectively
Addition of 5% by weight lowers the softening point, lowers the sinterable temperature range, and is suitable for low-temperature sintering. However, these large amounts impair the low dielectric loss, which is one characteristic of the low-temperature fired glass ceramics of the present invention, and increase the dielectric loss. Therefore, the amount of each of them must be 5% by weight or less. On the other hand, when the amount of addition is small, the temperature at which sintering can be performed increases, and sintering at 1000 ° C. or lower becomes difficult. Therefore, its addition needs to be 0.1% by weight or more. In particular, 0.5% by weight or more and 2% by weight
The following additions make it possible to set the sinterable temperature to around 900 ° C., which is preferable.
【００１０】また、１Ａ族元素酸化物は添加することに
よりガラスの軟化点を低下させる効果が著しく、焼成温
度を低下させるのには有効であるが、誘電損失の増大も
大きい。従って、その添加は３重量％以下である必要が
あり、好適には１重量％以下の添加が望ましい。The addition of a Group 1A element oxide has a remarkable effect of lowering the softening point of glass, and is effective in lowering the firing temperature, but also greatly increases the dielectric loss. Therefore, the addition must be 3% by weight or less, and preferably 1% by weight or less.
【００１１】また、上記した組成のガラスをセラミック
ス粒子との複合体として用いると、セラミックス粒子の
選別により材料強度の強化、誘電率、誘電損失や熱膨張
率の変更が可能となり有用であるが、その比率はセラミ
ックス粒子５０重量％以下であることが望ましい。それ
以上の比率では１０００℃以下での焼成が著しく困難と
なるからである。更に１０重量％以上３０重量％以下の
配合比率が、材料強度の強化には有効であることから好
適である。また、該セラミックス粒子は、アルミナ、シ
リカ、ムライト、コーディエライト、フォルステライト
等何れでも良いが、低誘電率、低誘電損失であるもの
が、誘電特性を劣化させないために好ましい。When the glass having the above-mentioned composition is used as a composite with ceramic particles, the material strength can be enhanced and the dielectric constant, dielectric loss and thermal expansion coefficient can be changed by selecting the ceramic particles, which is useful. The ratio is desirably 50% by weight or less of the ceramic particles. If the ratio is higher than the above, firing at 1000 ° C. or lower becomes extremely difficult. Further, a blending ratio of 10% by weight or more and 30% by weight or less is preferable because it is effective for enhancing the material strength. The ceramic particles may be any of alumina, silica, mullite, cordierite, forsterite and the like, but those having a low dielectric constant and a low dielectric loss are preferable because they do not deteriorate the dielectric properties.
【００１２】上記した組成のガラスは、８００〜１００
０℃の温度範囲での焼成過程においてＣａＡｌ２ＳｉＯ
６、Ｃａ３Ｓｉ２Ｏ７（Rankinite）、ＣａＳｉＯ３（W
ollastonite）、乃至はＡｌ６Ｓｉ２Ｏ１３（Mullite）
の結晶を析出する。これら結晶の析出はガラス組成、焼
成条件により状態が異なるが、誘電損失の低減、材料強
度の強化には有効に作用する。The glass having the above-mentioned composition is 800 to 100
In the firing process in a temperature range of 0 ° C., CaAl 2 SiO
6 , Ca 3 Si 2 O 7 (Rankinite), CaSiO 3 (W
ollastonite) or Al 6 Si 2 O 13 (Mullite)
The crystals of are precipitated. The state of precipitation of these crystals differs depending on the glass composition and firing conditions, but it effectively acts to reduce dielectric loss and strengthen material strength.
【００１３】本発明の低温焼成ガラスセラミックスを用
いて多層配線基板を製造する場合、グリーンシート積層
法が有効である。平均粒径がサブミクロンから数ミクロ
ン程度である上記した組成のガラス粉末と可塑剤、バイ
ンダーを分散媒となる溶剤に添加、混合してスラリーと
し、これをスリップキャスティング成膜法等によりグリ
ーンシートとする。ガラス粉末の粒径は、焼成温度、焼
成前後の収縮率、前述のスラリー作製時における各種有
機ビヒクルの添加量等と関係してくるが、平均粒径１〜
３μｍ程度が取り扱い易い。また、本発明の低温焼成ガ
ラスセラミックスをセラミックス粒子との複合体として
使用する場合は、添加するセラミックス粒子は平均粒径
をサブミクロンから数ミクロンとして用いて良いが、前
述のガラス粉末と同様、その粒径が各種因子に影響す
る。平均粒径が０．５〜２μｍ程度であると、材料強度
に有効であり好適である。グリーンシートにヴィア導体
や回路、キャビティ等を形成して、これら加工したグリ
ーンシートを積層して熱プレスを行って一体化した後、
８００〜１０００℃の温度範囲で焼成することにより多
層配線基板を得ることができる。この焼成過程において
上記組成のガラスは、焼成条件やガラス組成等により異
なるが、各種結晶を析出する。これにより、更に絶縁層
の低損失化、基板強度の強化が可能となり、高周波回路
搭載に好適な多層配線基板を得ることが可能となる。When manufacturing a multilayer wiring board using the low-temperature fired glass ceramic of the present invention, a green sheet laminating method is effective. A glass powder of the above composition having an average particle diameter of about several microns to submicron and a plasticizer, a binder are added to a solvent serving as a dispersion medium, mixed to form a slurry, and this is formed into a green sheet by a slip casting film forming method or the like. I do. The particle size of the glass powder is related to the firing temperature, the shrinkage ratio before and after firing, the amount of various organic vehicles added during the above-mentioned slurry preparation, and the like.
About 3 μm is easy to handle. When the low-temperature fired glass ceramic of the present invention is used as a composite with ceramic particles, the ceramic particles to be added may have an average particle size of submicron to several microns, but like the above-mentioned glass powder, Particle size affects various factors. When the average particle size is about 0.5 to 2 μm, it is effective and preferable for the material strength. After forming via conductors, circuits, cavities, etc. on the green sheet, laminating these processed green sheets, performing heat pressing and integrating them,
By firing in a temperature range of 800 to 1000 ° C., a multilayer wiring board can be obtained. In the firing process, the glass having the above composition precipitates various crystals depending on firing conditions, glass composition, and the like. As a result, it is possible to further reduce the loss of the insulating layer and enhance the strength of the substrate, and it is possible to obtain a multilayer wiring board suitable for mounting a high-frequency circuit.
【００１４】[0014]
【実施例】以下に本発明をより更に具体的に説明する
が、本発明はその要旨を超えない限り、以下の実施例に
限定されるものではない。EXAMPLES The present invention will be described in more detail below, but the present invention is not limited to the following examples unless it exceeds the gist.
【００１５】［実施例１］表１の組成に示すような組
成を有するガラスを製造し、アルコールを分散媒として
湿式粉砕を行った。アルコールを濾過乾燥した後、製粒
して平均粒径１μｍの粒度を有するガラス粉末Ａを得
た。同様に表１の組成、に示すような組成のガラス
を製造、製粒し、平均粒径１μｍのガラス粉末Ｂ及びＣ
を得た。これらガラス粉末Ａ、Ｂ及びＣにそれぞれ有機
バインダー、可塑剤、分散媒となる溶剤を添加した後、
ボールミルで十分混練し、粘度３０００〜１００００ｃ
ｐｓのスラリーを作製した。尚、有機バインダー、可塑
剤、溶媒等の有機ビヒクル類は、通常用いられているも
ので十分であり、その成分については特に限定を要しな
い。得られた各スラリーをスリップキャスティング成膜
法により１００μｍの厚みのグリーンシートとした。作
製した各グリーンシートをそれぞれ積層、熱プレスする
ことによりグリーンシート積層体Ａ、Ｂ及びＣとし、積
層体Ａ及びＢを９００℃、積層体Ｃを１０００℃で焼成
し、焼成体Ａ、Ｂ及びＣを得た。ここでグリーンシート
積層体Ａ、Ｂ、Ｃと焼成体Ａ、Ｂ、Ｃはガラス粉末Ａ、
Ｂ、Ｃに対応する。各焼成体をＸ線回折法による結晶相
の同定を行ったところ、焼成体Ａからは Rankinite、Wo
llastonite、ＣａＡｌ２ＳｉＯ６が同定された。同様に
焼成体Ｂからは Mullite 及びＣａＡｌ２ＳｉＯ６が、
焼成体ＣからはＣａＡｌ２ＳｉＯ６が同定された。ま
た、各焼成体の誘電特性は、各焼成体を直径約１２ｍ
ｍ、高さ約５ｍｍの円柱状に加工し、空洞共振器法によ
り誘電率、誘電正接を測定することで評価を行った。焼
成体Ａ、Ｂ、Ｃの１０ＧＨｚ帯における誘電率は、それ
ぞれ ６、７、７、誘電正接は、それぞれ ０．００１で
あり、低誘電率、低誘電損失であることが確認された。Example 1 A glass having a composition shown in Table 1 was produced, and wet pulverization was performed using alcohol as a dispersion medium. After filtering and drying the alcohol, the mixture was granulated to obtain glass powder A having an average particle size of 1 μm. Similarly, glass having the composition shown in Table 1 was produced and granulated, and glass powders B and C having an average particle diameter of 1 μm were produced.
I got After adding an organic binder, a plasticizer, and a solvent serving as a dispersion medium to these glass powders A, B, and C, respectively,
Knead well with ball mill, viscosity 3000 ~ 10000c
A ps slurry was made. As the organic vehicle such as an organic binder, a plasticizer, and a solvent, those commonly used are sufficient, and the components thereof are not particularly limited. Each of the obtained slurries was formed into a green sheet having a thickness of 100 μm by a slip casting method. Each of the produced green sheets is laminated and hot-pressed to form green sheet laminates A, B and C. The laminates A and B are fired at 900 ° C. and the laminate C is fired at 1000 ° C., and the fired bodies A, B and C was obtained. Here, the green sheet laminates A, B, and C and the fired bodies A, B, and C are glass powders A,
Corresponding to B and C. When the crystal phase of each fired body was identified by X-ray diffraction method, Rankinite, Wo
llastonite, CaAl 2 SiO 6 was identified. Similarly, Mullite and CaAl 2 SiO 6 are obtained from the fired body B,
From the fired body C, CaAl 2 SiO 6 was identified. The dielectric properties of each fired body were such that each fired body had a diameter of about 12 m.
The sample was processed into a cylindrical shape having a height of about 5 mm and a height of about 5 mm, and evaluated by measuring the dielectric constant and the dielectric loss tangent by a cavity resonator method. The dielectric constants of the fired bodies A, B, and C in the 10 GHz band were 6, 7, and 7, respectively, and the dielectric loss tangent was 0.001. Thus, it was confirmed that the sintered bodies had low dielectric constant and low dielectric loss.
【００１６】［実施例２］表１の組成に示す組成を有
するガラスを製造し、実施例１と同様の工程にて、平均
粒径約２μｍの粒度を有するガラス粉末Ｄを得た。次
に、平均粒径１μｍのコーディエライト粉末を、コーデ
ィエライト２０重量％、ガラス粉末Ｄ８０重量％となる
ように秤量し、分散媒としてアルコールを用い、ボール
ミルで３時間混合した後、アルコールを濾過乾燥させて
均質な混合粉末Ｄとした。同様に、表１の組成に示す
組成を有するガラス粉末Ｅ８０重量％と平均粒径１μｍ
の非晶質石英粉末２０重量％とからなる均質な混合粉末
Ｅを得た。これら混合粉末Ｄ、Ｅから、実施例１と同様
の工程にてグリーンシート積層体Ｄ、Ｅを作製し、それ
ぞれ９５０℃の焼成温度にて焼成を行い、焼成体Ｄ、Ｅ
を得た。空洞共振器法を用いて誘電特性を評価したとこ
ろ、１０ＧＨｚ帯において焼成体Ｄ、Ｅの誘電率は、そ
れぞれ５．５、６、誘電正接はそれぞれ０．００１、
０．００１であり、低誘電率、低誘電損失であることが
確認された。Example 2 A glass having the composition shown in Table 1 was produced, and a glass powder D having an average particle size of about 2 μm was obtained in the same process as in Example 1. Next, cordierite powder having an average particle diameter of 1 μm was weighed so that cordierite was 20% by weight and glass powder D was 80% by weight, and alcohol was used as a dispersion medium and mixed for 3 hours in a ball mill. The mixture was filtered and dried to obtain a homogeneous mixed powder D. Similarly, 80% by weight of glass powder E having the composition shown in Table 1 and an average particle size of 1 μm
To obtain a homogeneous mixed powder E composed of 20% by weight of an amorphous quartz powder. From these mixed powders D and E, green sheet laminates D and E were prepared in the same process as in Example 1, and baked at a firing temperature of 950 ° C., respectively.
I got When the dielectric properties were evaluated using the cavity resonator method, the dielectric constants of the fired bodies D and E in the 10 GHz band were 5.5 and 6, respectively, the dielectric loss tangent was 0.001, and the dielectric loss tangent was 0.001.
0.001, which was confirmed to be low dielectric constant and low dielectric loss.
【００１７】［実施例３］表１の組成に示す組成を有
するガラスを作製し、実施例１と同様の工程にて、平均
粒径約１μｍの粒度を有するガラス粉末とした。次に上
記ガラス粉末が７０重量％、平均粒径約１μｍのアルミ
ナ粉末が３０重量％となるように秤量し、分散媒として
エタノールを用い、ボールミルで３時間混合した後、エ
タノールを濾過乾燥させて均質な混合粉末とした。得ら
れた混合粉末に有機バインダー、可塑剤、分散媒となる
溶剤を添加した後、ボールミルで十分混練して粘度が約
５０００ｃｐｓのスラリーとし、スリップキャスティン
グ成膜法により厚み約１００μｍのグリーンシートを作
製した。作製したグリーンシートを所定の形状に打ち抜
いた後、各グリーンシートの所定の位置にヴィアホール
を形成し、該ヴィアホールにＡｕペーストを埋め込ん
だ。また、各グリーンシート上にＡｕペーストをスクリ
ーン印刷法により印刷することにより配線パターンを形
成した。配線導体としてはＡｕペーストの他に、Ｃｕペ
ースト、ＣｕＯペースト、Ａｇペースト、必要に応じて
ＰｄやＰｔを添加したＡｇペースト等も用いられる。こ
うして作製されたグリーンシートを積層、熱プレスによ
り一体化して積層体を得た。該積層体を大気中、９００
℃にて焼成して多層配線基板を得た。得られた多層配線
基板のマイクロストリップ線路部にて伝送特性を評価し
たところ、３０ＧＨｚにおいて損失が０．１ｄＢ／ｍｍ
であり、高周波アナログ回路の搭載に適した多層配線基
板が得られたことが確認された。Example 3 A glass having the composition shown in Table 1 was prepared, and a glass powder having an average particle size of about 1 μm was obtained in the same process as in Example 1. Next, the above-mentioned glass powder was weighed so that 70% by weight of alumina powder and 30% by weight of alumina powder having an average particle diameter of about 1 μm were mixed using ethanol as a dispersion medium in a ball mill for 3 hours, and then ethanol was filtered and dried. A homogeneous mixed powder was obtained. After adding an organic binder, a plasticizer, and a solvent serving as a dispersion medium to the obtained mixed powder, the mixture is sufficiently kneaded with a ball mill to obtain a slurry having a viscosity of about 5000 cps, and a green sheet having a thickness of about 100 μm is formed by a slip casting film forming method. did. After punching the produced green sheet into a predetermined shape, a via hole was formed at a predetermined position of each green sheet, and an Au paste was embedded in the via hole. Further, a wiring pattern was formed by printing an Au paste on each green sheet by a screen printing method. As the wiring conductor, in addition to the Au paste, a Cu paste, a CuO paste, an Ag paste, an Ag paste to which Pd or Pt is added as necessary, or the like is used. The green sheets thus produced were laminated and integrated by hot pressing to obtain a laminate. The laminate is placed in air at 900
It was fired at ℃ to obtain a multilayer wiring board. When the transmission characteristics were evaluated in the microstrip line portion of the obtained multilayer wiring board, the loss was 0.1 dB / mm at 30 GHz.
It was confirmed that a multilayer wiring board suitable for mounting a high-frequency analog circuit was obtained.
【００１８】[0018]
【表１】 [Table 1]
【００１９】[0019]
【発明の効果】以上述べたように、本発明の低温焼成ガ
ラスセラミックスによれば、１０００℃以下の温度で焼
成可能、すなわちＡｕ、Ａｇ、Ｃｕといった低抵抗導体
の同時焼成による内装化が可能であり、かつマイクロ
波、ミリ波領域の周波数帯において低誘電率かつ低誘電
損失な絶縁層を有する高周波アナログ回路の搭載に好適
な多層配線基板を提供することができる。As described above, according to the low-temperature fired glass ceramics of the present invention, firing can be performed at a temperature of 1000 ° C. or less, that is, interiorization by simultaneous firing of low-resistance conductors such as Au, Ag, and Cu is possible. It is possible to provide a multilayer wiring board suitable for mounting a high-frequency analog circuit having an insulating layer having a low dielectric constant and a low dielectric loss in a frequency band of microwave and millimeter wave regions.
───────────────────────────────────────────────────── フロントページの続き (58)調査した分野(Int.Cl.7，ＤＢ名) C04B 35/195 622 H05K 3/46 ──────────────────────────────────────────────────続 き Continued on the front page (58) Field surveyed (Int. Cl. 7 , DB name) C04B 35/195 622 H05K 3/46
Claims (10)
量％、ＣａＯ２０〜５０重量％、Ａｌ2Ｏ3２０〜４５重
量％、ＭｇＯ０．１〜５重量％、ＳｒＯ０．１〜５重量
％、ＢａＯ０．１〜５重量％、ＴｉＯ2０．１〜５重量
％、ＺｎＯ０．１〜５重量％、ＺｒＯ2０．１〜５重量
％、及び１Ａ族元素酸化物０〜３重量％からなる組成を
有するＳｉＯ2−ＣａＯ−Ａｌ2Ｏ3系ガラスであって、
８００〜１０００℃の焼成温度の焼成過程においてＣａ
Ａｌ 2 ＳｉＯ 6 、Ｃａ 3 Ｓｉ 2 Ｏ 7 （Ｒａｎｋｉｎｉｔ
ｅ）、ＣａＳｉＯ 3 （Ｗｏｌｌａｓｔｏｎｉｔｅ）、乃
至はＡｌ 6 Ｓｉ 2 Ｏ 13 （Ｍｕｌｌｉｔｅ）の結晶を析出し
て緻密化することを特徴とする低温焼成ガラスセラミッ
クス。1. A in the terms of oxides SiO 2 10 to 45 wt%, CaO20～50 wt%, Al 2 O 3 20 to 45 wt%, MgO0.1～5 wt%, SrO0.1～5 wt%, BaO0.1~5 wt%, TiO 2 0.1 to 5 wt%, ZnO0.1～5 wt%, ZrO 2 0.1 to 5 wt%, and compositions comprising a group 1A element oxide 0-3 wt% A SiO 2 —CaO—Al 2 O 3 system glass having
In the firing process at a firing temperature of 800 to 1000 ° C., Ca
Al 2 SiO 6 , Ca 3 Si 2 O 7 (Rankinit
e), CaSiO 3 (Wollastonite), No
It is a low-temperature fired glass ceramic characterized by precipitating and densifying Al 6 Si 2 O 13 (Mullite) crystals .
中にセラミックス粒子が分散した複合体であって、該ガ
ラスが酸化物換算にしてＳｉＯ２１０〜４５重量％、Ｃ
ａＯ２０〜５０重量％、Ａｌ２Ｏ３２０〜４５重量％、
ＭｇＯ０．１〜５重量％、ＳｒＯ０．１〜５重量％、Ｂ
ａＯ０．１〜５重量％、ＴｉＯ２０．１〜５重量％、Ｚ
ｎＯ０．１〜５重量％、ＺｒＯ２０．１〜５重量％、及
び１Ａ族元素酸化物０〜３重量％からなる組成を有する
とともに、８００〜１０００℃の焼成温度の焼成過程に
おいて緻密化することを特徴とする低温焼成ガラスセラ
ミックス。 2. A composite comprising ceramic particles dispersed in a SiO 2 —CaO—Al 2 O 3 system glass, wherein the glass is composed of 10 to 45% by weight of SiO 2 in terms of oxide, and
aO20~50 wt%, Al 2 O 3 20 to 45 wt%,
MgO 0.1-5% by weight, SrO 0.1-5% by weight, B
aO 0.1 to 5% by weight, TiO 2 0.1 to 5% by weight, Z
nO0.1~5 wt%, ZrO 2 0.1 to 5 wt%, and which has a composition consisting of Group 1A element oxide 0-3% by weight, densification in the firing process of firing temperature 800 to 1000 ° C. A low-temperature fired glass ceramic characterized by the following:
２Ｏ、及びＬｉ２Ｏから選ばれる１種類以上であること
を特徴とする請求項１又は２記載の低温焼成ガラスセラ
ミックス。3. The oxide of a Group 1A element is Na 2 O, K
2 O, and 1 or more in the low-temperature firing glass-ceramic according to claim 1 or 2, characterized in that selected from Li 2 O.
比率が、重量比率にして１０〜５０重量％であることを
特徴とする請求項２又は３記載の低温焼成ガラスセラミ
ックス。4. The low-temperature fired glass ceramic according to claim 2, wherein the ratio of the ceramic particles in the composite is 10 to 50% by weight in terms of weight ratio.
３（Alumina）、ＳｉＯ ２（Silica）、Ｍｇ２Ａｌ４Ｓ
ｉ５Ｏ１８（Cordierite）、Ｍｇ２ＳｉＯ４（Forsteri
te）及びＡｌ６Ｓｉ２Ｏ１３（Mullite）から選ばれる
１種類以上であることを特徴とする請求項２、３乃至４
のいずれか１項に記載の低温焼成ガラスセラミックス。5. The method according to claim 1, wherein the ceramic particles are Al.2O
3(Alumina), SiO 2(Silica), Mg2Al4S
i5O18(Cordierite), Mg2SiO4(Forsteri
te) and Al6Si2O13(Mullite)
5. The method according to claim 2, wherein at least one kind is selected.
A low-temperature fired glass ceramic according to any one of the above.
６、Ｃａ３Ｓｉ２Ｏ ７（Rankinite）、ＣａＳｉＯ３（W
ollastonite）、及びＡｌ６Ｓｉ２Ｏ１３（Mullite）の
うち、いずれか１種類以上の結晶が析出することを特徴
とする請求項１、２、３、４乃至５のいずれか１項に記
載の低温焼成ガラスセラミックス。6. The method according to claim 1, wherein the sintering process comprises CaAl.2SiO
6, Ca3Si2O 7(Rankinite), CaSiO3(W
ollastonite), and Al6Si2O13(Mullite)
Among them, one or more types of crystals are precipitated
The method according to any one of claims 1, 2, 3, 4 to 5
Low temperature fired glass ceramics.
−Ａｌ2Ｏ3系ガラス粉末５０〜１００重量％、セラミッ
クス粉末０〜５０重量％からなる混合粉末よりグリーン
シートを作製する成膜工程と、 （Ｂ）前記グリーンシートを積層して、熱プレスするこ
とにより一体化する積層工程と、 （Ｃ）前記積層工程を経て得られた積層体を８００〜１
０００℃の温度範囲で焼成して焼結体を作製する焼成工
程とを有する低温焼成ガラスセラミックスの製造方法で
あって、該ガラスが酸化物換算にしてＳｉＯ2１０〜４
５重量％、ＣａＯ２０〜５０重量％、Ａｌ2Ｏ3２０〜４
５重量％、ＭｇＯ０．１〜５重量％、ＳｒＯ０．１〜５
重量％、ＢａＯ０．１〜５重量％、ＴｉＯ2０．１〜５
重量％、ＺｎＯ０．１〜５重量％、ＺｒＯ2０．１〜５
重量％、及び１Ａ族元素酸化物０〜３重量％からなる組
成を有し、８００〜１０００℃の温度範囲での焼成過程
においてＣａＡｌ 2 ＳｉＯ 6 、Ｃａ 3 Ｓｉ 2 Ｏ 7 （Ｒａｎｋ
ｉｎｉｔｅ）、ＣａＳｉＯ 3 （Ｗｏｌｌａｓｔｏｎｉｔ
ｅ）、乃至はＡｌ 6 Ｓｉ 2 Ｏ 13 （Ｍｕｌｌｉｔｅ）の結晶
を析出することを特徴とする低温焼成ガラスセラミック
スの製造方法。7. (A) SiO 2 —CaO by weight percentage
-Al 2 O 3 based glass powder 50 to 100 wt%, a film forming step of fabricating a green sheet from a mixed powder consisting of 0-50 wt% ceramic powder, by stacking (B) the green sheet and hot pressing (C) the laminated body obtained through the laminating step is 800 to 1
A firing step of firing at a temperature range of 000 ° C. to produce a sintered body, wherein the glass is made of SiO 2 10 to 4 in terms of oxide.
5 wt%, CaO20~50 wt%, Al 2 O 3 20~4
5% by weight, MgO 0.1-5% by weight, SrO 0.1-5
Wt%, BaO0.1~5 wt%, TiO 2 0.1 to 5
Wt%, ZnO0.1~5 wt%, ZrO 2 0.1 to 5
% By weight, and a composition comprising 0 to 3% by weight of a Group 1A element oxide, and a firing process in a temperature range of 800 to 1000 ° C.
In CaAl 2 SiO 6 , Ca 3 Si 2 O 7 (Rank
inite), CaSiO 3 (Wollastonit )
e) or a crystal of Al 6 Si 2 O 13 (Mullite)
A method for producing a low-temperature fired glass ceramic, comprising:
２Ｏ、及びＬｉ２Ｏから選ばれる１種類以上であること
を特徴とする請求項７記載の低温焼成ガラスセラミック
スの製造方法。8. The method according to claim 1, wherein the group 1A element oxide is Na 2 O, K
2 O, and a manufacturing method of low-temperature firing glass-ceramic according to claim 7, characterized in that one or more selected from Li 2 O.
３（Alumina）、ＳｉＯ ２（Silica）、Ｍｇ２Ａｌ４Ｓ
ｉ５Ｏ１８（Cordierite）、Ｍｇ２ＳｉＯ４（Forsteri
te）、ＣａＡｌ２ＳｉＯ７、Ｃａ３Ｓｉ２Ｏ７（Rankin
ite）、ＣａＳｉＯ３（Wollastonite）、及びＡｌ６Ｓ
ｉ２Ｏ１３（Mullite）から選ばれる１種類以上である
ことを特徴とする請求項７又は８記載の低温焼成ガラス
セラミックスの製造方法。9. The method according to claim 9, wherein the ceramic particles are Al.2O
3(Alumina), SiO 2(Silica), Mg2Al4S
i5O18(Cordierite), Mg2SiO4(Forsteri
te), CaAl2SiO7, Ca3Si2O7(Rankin
ite), CaSiO3(Wollastonite) and Al6S
i2O13(Mullite) One or more types selected from
The low-temperature fired glass according to claim 7 or 8, wherein
Manufacturing method of ceramics.
Ｏ６、Ｃａ３Ｓｉ２Ｏ７（Rankinite）、ＣａＳｉＯ３
（Wollastonite）、及びＡｌ６Ｓｉ２Ｏ１３（Mullit
e）のうち、いずれか１種類以上の結晶が析出すること
を特徴とする請求項７、８乃至９のいずれか１項に記載
の低温焼成ガラスセラミックスの製造方法。10. The method according to claim 1, wherein in the firing step, CaAl 2 Si
O 6 , Ca 3 Si 2 O 7 (Rankinite), CaSiO 3
(Wollastonite), and Al 6 Si 2 O 13 (Mullit
The method for producing a low-temperature fired glass ceramic according to any one of claims 7, 8 and 9, wherein at least one kind of crystal is precipitated out of e).
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13414799A JP3166850B2 (en) | 1999-05-14 | 1999-05-14 | Low temperature fired glass ceramics and method for producing the same |
| US09/438,492 US6348424B1 (en) | 1998-11-11 | 1999-11-12 | Low-temperature calcined glass ceramic and a manufacturing process therefor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13414799A JP3166850B2 (en) | 1999-05-14 | 1999-05-14 | Low temperature fired glass ceramics and method for producing the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2000327428A JP2000327428A (en) | 2000-11-28 |
| JP3166850B2 true JP3166850B2 (en) | 2001-05-14 |
Family
ID=15121575
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13414799A Expired - Fee Related JP3166850B2 (en) | 1998-11-11 | 1999-05-14 | Low temperature fired glass ceramics and method for producing the same |
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| Country | Link |
|---|---|
| JP (1) | JP3166850B2 (en) |
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|---|---|---|---|---|
| KR100419868B1 (en) * | 2001-05-14 | 2004-02-25 | 한국과학기술연구원 | Method for Preparing Dielectric Ceramic for Low Temperature Co-fired Ceramic Substrate |
| KR100506731B1 (en) | 2002-12-24 | 2005-08-08 | 삼성전기주식회사 | Low temperature sinterable dielectric composition, multilayer ceramic capacitor, ceramic electronic device |
| JP5504703B2 (en) * | 2009-06-16 | 2014-05-28 | 三菱電機株式会社 | Ceramic powder for green sheet, green sheet and ceramic substrate |
| FR2958283B1 (en) | 2010-04-01 | 2014-07-04 | Commissariat Energie Atomique | VITROCERAMIC GLASS COMPOSITIONS FOR JOINTS OF APPLIANCES OPERATING AT HIGH TEMPERATURES AND METHOD OF ASSEMBLY USING SAME. |
| KR20210035828A (en) | 2018-07-23 | 2021-04-01 | 코닝 인코포레이티드 | Magnesium Aluminosilicate Glass Ceramic |
| CN114685152B (en) * | 2020-12-28 | 2022-11-04 | 山东国瓷功能材料股份有限公司 | Low-temperature co-fired ceramic material for millimeter wave antenna module and preparation method thereof |
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| JP2563982B2 (en) * | 1987-07-06 | 1996-12-18 | 株式会社トクヤマ | Method for producing anorthite-based sintered body |
| JPH0816021B2 (en) * | 1993-06-10 | 1996-02-21 | 日本電気株式会社 | Multi-layer glass ceramic substrate and manufacturing method thereof |
| JPH08175864A (en) * | 1994-12-26 | 1996-07-09 | Etsuro Kato | Production of low-temperature sintered anorthite-gehlenite ceramic |
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