JP3141441B2 - Method of forming SiC crystal film by laser - Google Patents
Method of forming SiC crystal film by laserInfo
- Publication number
- JP3141441B2 JP3141441B2 JP03243817A JP24381791A JP3141441B2 JP 3141441 B2 JP3141441 B2 JP 3141441B2 JP 03243817 A JP03243817 A JP 03243817A JP 24381791 A JP24381791 A JP 24381791A JP 3141441 B2 JP3141441 B2 JP 3141441B2
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- Prior art keywords
- substrate
- thin film
- gas
- single crystal
- laser
- Prior art date
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Description
【０００１】[0001]
【産業上の利用分野】本発明はＳｉＣ単結晶薄膜の製造
方法に関し、より詳しくは、従来法より低い温度でＳｉ
Ｃ単結晶薄膜を製造する方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for producing a SiC single crystal thin film, and more particularly, to a method for producing a SiC single crystal thin film at a lower temperature than a conventional method.
The present invention relates to a method for producing a C single crystal thin film.
【０００２】[0002]
【従来の技術】近年、Ｓｉを用いたデバイスはめざまし
い発展をとげ、到る所で使用されるようになった。しか
し、Ｓｉデバイスは１００℃前後の温度を超えると、正
常に動作することができず、過酷な環境で動作するデバ
イスとしては不適切であると考えられている。そこで過
酷な環境（例えば熱、放射線、化学薬品などのもとで）
においても正常に動作すると考えられるシリコンカーバ
イド（ＳｉＣ）に注目し研究が行なわれてきた。ＳｉＣ
にはおよそ、２５０種の結晶形があることが知られてお
り、このうち３Ｃ構造は電子デバイスに適しており、４
Ｈ、６Ｈ、１５Ｒの各構造がＬＥＤに適していることが
知られている。そしてかかる構造を持つＳｉＣ単結晶
は、従来、熱ＣＶＤ法やプラズマＣＶＤ法により製造さ
れていた。2. Description of the Related Art In recent years, devices using Si have made remarkable developments and have been used everywhere. However, the Si device cannot operate normally when the temperature exceeds about 100 ° C., and is considered to be inappropriate as a device that operates in a severe environment. In harsh environments (eg, under heat, radiation, chemicals, etc.)
Also, attention has been paid to silicon carbide (SiC), which is considered to operate normally. SiC
Is known to have approximately 250 crystal forms, of which the 3C structure is suitable for electronic devices,
It is known that each structure of H, 6H, and 15R is suitable for LED. The SiC single crystal having such a structure has been conventionally manufactured by a thermal CVD method or a plasma CVD method.
【０００３】[0003]
【発明が解決しようとする課題】しかしながら従来用い
られてきた熱ＣＶＤ法においては、単結晶薄膜の成長時
の温度が、１０００〜１４００℃と高いため、格子欠陥
や、界面不整合を起こしやすいという課題があるのみな
らず、一般的に基板として用いられるＳｉ基板とＳｉＣ
の格子定数が、約１Å異なるため、Ｓｉ基板上にＳｉＣ
がうまく積層せず、このため基板上に炭素源となるガス
を流しつつ、急加熱してバッファ層を形成する等の処置
を行っている。しかしながらバッファ層形成時の急加熱
は、基板温度を室温から１５００℃付近まで、１分程度
で加熱するものであり、煩わしい作業であった。また、
プラズマＣＶＤ法を用いれば、プロセスの低温化は可能
であるが、作成した薄膜の表面をプラズマにより損傷さ
せてしまうという課題があった。さらにレーザーＣＶＤ
法を用いると、多結晶やアモルファス状態の薄膜しか得
られず、ＳｉＣ単結晶を作成できなかった。However, in the conventional thermal CVD method, since the temperature at the time of growing a single crystal thin film is as high as 1000 to 1400 ° C., lattice defects and interface mismatch are apt to occur. In addition to the problems, Si substrates and SiC generally used as substrates
Are about 1 ° different from each other, so that the SiC
Therefore, treatments such as forming a buffer layer by rapid heating while flowing a gas serving as a carbon source over the substrate are performed. However, rapid heating during the formation of the buffer layer involves heating the substrate temperature from room temperature to around 1500 ° C. in about one minute, which is a troublesome operation. Also,
If the plasma CVD method is used, the temperature of the process can be reduced, but there is a problem that the surface of the formed thin film is damaged by plasma. Further laser CVD
When the method was used, only a polycrystalline or amorphous thin film could be obtained, and a SiC single crystal could not be formed.
【０００４】[0004]
【課題を解決するための手段】そこで本発明者らは、鋭
意検討の結果、レーザー光を励起源とし、該レーザー光
が基板を照射するようにしたレーザーＣＶＤ法により、
かかる課題が解決されることを見出し、本発明に到達し
た。すなわち本発明の目的は、ＳｉＣの単結晶薄膜を低
温で成長させることが可能で、格子欠陥や、界面不整合
を起こしにくく、かつバッファ層を基板上に生成させる
工程の不要な、ＳｉＣ単結晶薄膜の製造方法を提供する
ことであり、かかる目的は炭素源及びシリコン源となる
原料ガスを含有する材料ガスを、基板上に送り、該基板
上において該原料ガスを分解させ、該基板上にＳｉＣの
薄膜を成長させる方法において、該基板の温度が、２０
〜８００℃であり、該原料ガスの分解をレーザー光で行
い、かつ該レーザー光が該基板を照射することを特徴と
するＳｉＣ単結晶薄膜の製造方法、より詳しくは該レー
ザー光が、該基板に対し、４５〜９０°の角度で該基板
を照射する前記ＳｉＣ単結晶薄膜の製造方法、により容
易に達成される。The inventors of the present invention have conducted intensive studies, and as a result, have conducted a laser CVD method using a laser beam as an excitation source and irradiating the substrate with the laser beam.
The inventors have found that such a problem can be solved, and have reached the present invention. That is, an object of the present invention is to provide a SiC single crystal that can grow a SiC single crystal thin film at a low temperature, is unlikely to cause lattice defects and interface mismatch, and does not require a step of forming a buffer layer on a substrate. It is an object of the present invention to provide a method for producing a thin film, in which a source gas containing a source gas serving as a carbon source and a silicon source is sent onto a substrate, the source gas is decomposed on the substrate, and In the method of growing a thin film of SiC, the temperature of the substrate may be 20.
To 800 ° C., wherein the source gas is decomposed by laser light, and the laser light irradiates the substrate. On the other hand, it is easily achieved by the method for producing a SiC single crystal thin film, wherein the substrate is irradiated at an angle of 45 to 90 °.
【０００５】以下、本発明をより詳細に説明する。Hereinafter, the present invention will be described in more detail.
【０００６】本発明に用いられる基板は所望するＳｉＣ
の結晶形と同じであれば特に問わないが所望するＳｉＣ
の格子定数と、基板の格子定数の差は小さい方が好まし
く、具体的には格子定数の差が、１Å以下であることが
好ましい。また、基板の結晶性は高いほど好ましい。具
体的には、例えば立方晶の３Ｃ−ＳｉＣの場合には、Ｓ
ｉ単結晶基板が、結晶性が高く大口径の基板を容易に入
手できるため用いられる。また本発明の方法は基板温度
が従来の製造方法よりかなり低温であるため、高温で分
解しやすいＧａＡｓ等のＩＩＩ−Ｖ族化合物の基板も使
用できるようになった。基板の面方位については特に問
わないが、低指数の面が好ましい。[0006] The substrate used in the present invention is the desired SiC.
Is not particularly limited as long as it is the same as the crystal form of
Is preferably smaller than the lattice constant of the substrate, and specifically, the difference between the lattice constants is preferably 1 ° or less. The higher the crystallinity of the substrate, the better. Specifically, for example, in the case of cubic 3C—SiC,
The i-single-crystal substrate is used because a substrate having high crystallinity and a large diameter can be easily obtained. Further, since the substrate temperature of the method of the present invention is considerably lower than that of the conventional manufacturing method, a substrate of a III-V compound such as GaAs which can be easily decomposed at a high temperature can be used. The plane orientation of the substrate is not particularly limited, but a plane having a low index is preferable.
【０００７】以下の文において原料ガスとは炭素源ガス
及びシリコン源ガス、材料ガスとは原料ガス及びキャリ
アガスその他必要に応じドーパントガス等を含み、薄膜
成長時に供給されるガスを意味する。In the following text, the source gas means a carbon source gas and a silicon source gas, and the source gas means a gas containing a source gas, a carrier gas and other dopant gas as required, and supplied during the growth of a thin film.
【０００８】本発明に使用される装置の１例を、図１に
示す。図１の装置は、実際に実施例にて用いたものでも
ある。反応室１は真空ポンプ２により減圧され、反応室
１中には、その上に薄膜を成長させるための基板３が、
その表面にレーザー光が照射されるようにステージ４上
に載置される。ステージ４は、ヒーター５により所望の
温度に加熱され、その結果基板３も加熱される。基板３
が所望の温度に加熱された後、材料ガス供給管６より、
炭素源ガスとシリコン源ガスよりなる原料ガスとキャリ
アガスを主成分とする材料ガスが供給される。供給され
た原料ガスは基板上にて、ウィンドウ９を通って反応室
１内に導入されたレーザー光により照射され、光分解さ
れ、基板３とおなじ結晶形のＳｉＣ単結晶薄膜として堆
積、成長する。このときウインドウ９が、生成したＳｉ
やＣが付着することにより曇ってしまい、レーザー光の
透過率を下げてしまうことのないよう、シールドガス供
給管１０より、Ａｒガスのような、不活性気体を供給す
ることにより、生成したＳｉやＣをウィンドウ９に近寄
らせなくすることが好ましい。FIG. 1 shows an example of an apparatus used in the present invention. The apparatus of FIG. 1 is actually used in the embodiment. The pressure in the reaction chamber 1 is reduced by a vacuum pump 2, and a substrate 3 for growing a thin film thereon is provided in the reaction chamber 1.
It is mounted on the stage 4 so that its surface is irradiated with laser light. The stage 4 is heated to a desired temperature by the heater 5, and as a result, the substrate 3 is also heated. Substrate 3
Is heated to a desired temperature, and then from the material gas supply pipe 6,
A source gas composed of a carbon source gas and a silicon source gas and a material gas mainly containing a carrier gas are supplied. The supplied source gas is irradiated on the substrate by a laser beam introduced into the reaction chamber 1 through the window 9, is photodecomposed, and is deposited and grown as an SiC single-crystal thin film having the same crystal shape as the substrate 3. . At this time, the window 9 is
By supplying an inert gas such as Ar gas from the shield gas supply pipe 10 to prevent the fogging due to the adhesion of C and C and lowering the transmittance of the laser light, It is preferable that C and C do not approach the window 9.
【０００９】従来ＳｉＣ単結晶薄膜をレーザーＣＶＤ法
により製造する試みでは、基板に対しレーザー光が水平
に照射されており、基板自身にレーザー光が照射される
ことはなく、またＳｉＣの多結晶やアモルファスは得ら
れたが、単結晶薄膜を得ることは出来なかった。それに
対し本発明では、基板自身にレーザー光が照射されるこ
とによって驚くべきことに、ＳｉＣ単結晶薄膜が容易に
得られるようになったのである。以下に製造条件につ
き、詳細に説明する。Conventionally, in an attempt to manufacture a SiC single-crystal thin film by a laser CVD method, a laser beam is applied horizontally to a substrate, and the substrate itself is not irradiated with a laser beam. Although amorphous was obtained, a single crystal thin film could not be obtained. On the other hand, in the present invention, surprisingly, by irradiating the substrate itself with laser light, a SiC single crystal thin film can be easily obtained. Hereinafter, the manufacturing conditions will be described in detail.
【００１０】本発明に用いられる原料ガスは、分解エネ
ルギーや、吸収係数、多重光子吸収等を考慮し、用いる
レーザー光に分解され、炭素源及び／又はシリコン源と
して使用できるものを選択すればよく、特に限定されな
いが、例えばＡｒＦエキシマレーザーであれば、シリコ
ン源ガスとしてＳｉ2Ｈ6、ＳｉＨ3Ｃｌ、ＳｉＨ2Ｃ
ｌ 2、ＳｉＨＣｌ3等が好ましく、炭素源ガスとしては、
ＣＨ4、Ｃ2Ｈ6、Ｃ3Ｈ8，Ｃ2Ｈ2、Ｃ2Ｈ4等が好まし
く、特に好ましくはＣ2Ｈ2、Ｃ2Ｈ4である。[0010] The raw material gas used in the present invention is decomposed energy.
Energy, absorption coefficient, multi-photon absorption, etc.
Decomposed into laser light, with carbon source and / or silicon source
What is necessary is just to select those that can be used as
However, for example, for an ArF excimer laser, a silicon
Si as the source gasTwoH6, SiHThreeCl, SiHTwoC
l Two, SiHClThreeAnd the like, and as the carbon source gas,
CHFour, CTwoH6, CThreeH8, CTwoHTwo, CTwoHFourEtc. are preferred
And particularly preferably CTwoHTwo, CTwoHFourIt is.
【００１１】本発明に用いられるレーザー光源として
は、そのレーザー光により分解する原料ガスを用いれば
よいため、原理的には特に限定されないが、短波長、す
なわち高エネルギーのエキシマーレーザーをもちいるの
が好ましく、具体的には、ＸｅＦエキシマレーザー（波
長３１５ｎｍ，以下括弧内は発振波長を示す。）、Ｘｅ
Ｃｌエキシマレーザー（３０８ｎｍ）、ＸｅＢｒエキシ
マレーザー（２８２ｎｍ）、ＫｒＦエキシマレーザー
（２４９ｎｍ）、ＡｒＦエキシマレーザー（１９３ｎ
ｍ）、Ｆ2エキシマレーザー（１５７ｎｍ）等が用いら
れ、入手しやすく、波長の短い点より、ＡｒＦエキシマ
レーザーが特に好ましい。The laser light source used in the present invention is not particularly limited in principle because a raw material gas decomposed by the laser light may be used, but a short wavelength, ie, high energy excimer laser is preferably used. Preferably, specifically, a XeF excimer laser (wavelength: 315 nm, hereinafter, the oscillation wavelength is shown in parentheses), Xe
Cl excimer laser (308 nm), XeBr excimer laser (282 nm), KrF excimer laser (249 nm), ArF excimer laser (193n)
m), F 2 excimer laser (157 nm) or the like is used, easily available, shorter point wavelength, ArF excimer laser is particularly preferable.
【００１２】本発明で用いるレーザー光の基板表面に対
する単位面積あたりのパルスエネルギーは、用いられる
レーザー光の波長や照射角、材料ガスの種類、圧力によ
り異なるので、特に限定されないが、例えばＡｒＦエキ
シマレーザーを用い、基板に垂直に照射し、材料ガス圧
が２Ｔｏｒｒの場合、５〜２０ｍＪ／ｃｍ2が好まし
い。２０ｍＪ／ｃｍ2を超えると成長させた薄膜の表面
が粗くなりやすい。レーザーパルスの繰り返し周波数
は、特に限定されないが、あまり低いと成長速度が遅く
なるので好ましくない。The pulse energy per unit area of the laser beam with respect to the substrate surface used in the present invention varies depending on the wavelength, irradiation angle, type of material gas and pressure of the laser beam used, and is not particularly limited. For example, an ArF excimer laser When the material gas pressure is 2 Torr by irradiating the substrate perpendicularly, the thickness is preferably 5 to 20 mJ / cm 2 . If it exceeds 20 mJ / cm 2 , the surface of the grown thin film tends to be rough. The repetition frequency of the laser pulse is not particularly limited. However, if it is too low, the growth rate becomes slow, which is not preferable.
【００１３】レーザー光の基板に対する照射角度は、レ
ーザー光が基板に照射されさえすれば特に限定されない
が、本発明においては、レーザー光を原料ガスの分解の
みならず、基板の表面を活性化するためにも使用してい
るので、４５〜９０°が好ましく、より好ましくは６０
〜９０°、最も好ましくは、９０°である。照射角が９
０°に近いほど、すなわち基板に対して垂直に近く照射
するほど、成長速度が速く、結晶性もよくなり、好まし
い。The irradiation angle of the laser beam on the substrate is not particularly limited as long as the laser beam is irradiated on the substrate. In the present invention, the laser beam not only decomposes the source gas but also activates the surface of the substrate. 45-90 ° is preferred, and more preferably 60-90 °.
９０90 °, most preferably 90 °. Illumination angle is 9
The closer to 0 °, i.e., the closer to the perpendicular to the substrate, the faster the growth rate and the better the crystallinity, which is preferable.
【００１４】本発明においては、基板の温度を２０〜８
００℃に保持する。高温では薄膜の結晶欠陥が増加し、
低温では生成した薄膜は粗いものになるので上記範囲が
適当である。良好なＳｉＣ薄膜を得るには、好ましくは
２０〜６００℃、特に好ましくは、２００〜５００℃に
保持するのがよい。In the present invention, the temperature of the substrate is set to 20 to 8
Hold at 00 ° C. At high temperatures, the crystal defects of the thin film increase,
At a low temperature, the formed thin film becomes coarse, so the above range is appropriate. In order to obtain a good SiC thin film, the temperature is preferably maintained at 20 to 600C, particularly preferably 200 to 500C.
【００１５】本発明における原料ガスの供給は、キャリ
アガス、シールドガス等を含む反応室内の全ガス圧で、
２．５Ｔｏｒｒ以下が好ましく、より好ましくは１〜２
Ｔｏｒｒである。The supply of the raw material gas in the present invention is performed at the total gas pressure in the reaction chamber including the carrier gas, the shielding gas, and the like.
It is preferably 2.5 Torr or less, more preferably 1-2.
Torr.
【００１６】２．５Ｔｏｒｒを超えると成長した薄膜の
表面が微粒子に覆われたような粗い面になりやすく、均
一な表面が得られにくい。またあまり圧力が低いと成長
速度が遅くなりやすい。炭素源ガスとシリコン源ガスの
量比は、使用するレーザー光に対するそれぞれのガスの
光分解しやすさに影響されたため、単純に炭素とシリコ
ンの原子数の比が１：１になる組成にはならず、例えば
Ｃ2Ｈ2とＳｉ2Ｈ6を用いた場合、Ｓｉ2Ｈ6：Ｃ2Ｈ2＝
３：７〜３：１７が好ましく、より好ましくは１：４で
ある。If the pressure exceeds 2.5 Torr, the surface of the grown thin film tends to be rough as covered with fine particles, and it is difficult to obtain a uniform surface. If the pressure is too low, the growth rate tends to be slow. Since the quantity ratio of the carbon source gas and the silicon source gas was affected by the ease of photodecomposition of each gas with respect to the laser light used, a composition in which the ratio of the number of atoms of carbon and silicon is simply 1: 1 is not possible. However, for example, when C 2 H 2 and Si 2 H 6 are used, Si 2 H 6 : C 2 H 2 =
The ratio is preferably 3: 7 to 3:17, more preferably 1: 4.
【００１７】本発明における原料ガスの供給方法は特に
限定されないが、供給した原料ガスが、なるべく基板付
近で光分解されるのが好ましく、具体的には、レーザー
光を基板に対して９０°で照射した場合、基板に対し平
行な方向から原料ガスを供給することが好ましい。The method of supplying the source gas in the present invention is not particularly limited, but it is preferable that the supplied source gas is photolyzed as close to the substrate as possible. Specifically, the laser beam is irradiated at 90 ° to the substrate. When irradiation is performed, it is preferable to supply a source gas from a direction parallel to the substrate.
【００１８】[0018]
【実施例】以下本発明を、実施例を用いて更に詳細に説
明するが、本発明は、その要旨を超えないかぎり、実施
例に限定されるものではない。The present invention will be described in more detail with reference to the following Examples, which, however, are not intended to limit the scope of the invention.
【００１９】[0019]
【実施例１、２、比較例１、２】基板として、３Ｃ構造
をもつＳｉ単結晶を用い、レーザー光源としてＡｒＦエ
キシマレーザー（波長１９３ｎｍ）を用い、図１に示す
装置を用い、レーザー光を９０°に照射するようにし
て、３Ｃ−ＳｉＣ単結晶薄膜を成長させた。薄膜形成プ
ロセスのダイヤグラムを図２に示す。また製造条件とそ
の結果を表１に示す。さらに、Ｃｕ−Ｋα線を用いたＸ
ＲＤ測定の結果、回折角３５．６°に顕著なピークがみ
られ、３Ｃ−ＳｉＣであることが確認された。単位面積
当りのパルスエネルギーが１５ｍＪ／ｃｍ2を超える
と、成長した薄膜表面が、０．２μｍ程度の微粒子によ
り形成された粗い面になってしまい、緻密な薄膜が得ら
れなかった。Examples 1 and 2 and Comparative Examples 1 and 2 Using a single crystal of Si having a 3C structure as a substrate, an ArF excimer laser (wavelength 193 nm) as a laser light source, and using the apparatus shown in FIG. By irradiating at 90 °, a 3C—SiC single crystal thin film was grown. FIG. 2 shows a diagram of the thin film forming process. Table 1 shows the manufacturing conditions and the results. Furthermore, X using Cu-Kα ray
As a result of RD measurement, a remarkable peak was observed at a diffraction angle of 35.6 °, and it was confirmed that the sample was 3C-SiC. When the pulse energy per unit area exceeded 15 mJ / cm 2 , the surface of the grown thin film became a rough surface formed by fine particles of about 0.2 μm, and a dense thin film could not be obtained.
【００２０】[0020]
【実施例３〜５、比較例３、４】実施例１と同様の装置
を用い、表２に示す条件にて該装置を動かし、３Ｃ−Ｓ
ｉＣ単結晶薄膜を成長させた。結果を表２に示す。炉内
圧力、すなわち材料ガス濃度が、３Ｔｏｒｒを超える
と、パルスエネルギーが約１０ｍＪ／ｃｍ2の条件で
は、薄膜表面が、微粒子により形成された粗い面になっ
てしまう。これは材料ガスの濃度が高いため、気相中で
の反応が支配的になってしまい、気相中で成長したＳｉ
Ｃの微粒子が、堆積したためと考えられる。Examples 3 to 5, Comparative Examples 3 and 4 Using the same apparatus as in Example 1, the apparatus was operated under the conditions shown in Table 2, and 3C-S
An iC single crystal thin film was grown. Table 2 shows the results. When the furnace pressure, that is, the material gas concentration exceeds 3 Torr, the thin film surface becomes a rough surface formed by fine particles under the condition that the pulse energy is about 10 mJ / cm 2 . Since the concentration of the material gas is high, the reaction in the gas phase becomes dominant, and the Si grown in the gas phase
It is considered that the fine particles of C were deposited.
【００２１】[0021]
【実施例６、７、比較例５、６】実施例１と同様の装置
を用い、表３に示す条件にて該装置を動かし、３Ｃ−Ｓ
ｉＣ単結晶薄膜を成長させた。結果を表３に示す。原料
ガスとしてＣ2Ｈ2とＳｉ 2Ｈ6を用いた場合、その量比
は、Ｓｉ2Ｈ6:Ｃ2Ｈ2＝３：７〜３：１７の範囲が好ま
しく、１：４のとき、ＳｉとＣの組成比が１：１になり
とくに好ましい。これはＳｉ源ガスとＣ源ガスの光分解
しやすさが異なることに起因すると考えれる。Embodiments 6 and 7, Comparative Examples 5 and 6 The same apparatus as in Embodiment 1.
And the apparatus was operated under the conditions shown in Table 3, and 3C-S
An iC single crystal thin film was grown. Table 3 shows the results. material
C as gasTwoHTwoAnd Si TwoH6If used, the quantity ratio
Is SiTwoH6:CTwoHTwo= 3: 7 to 3:17 is preferred
When the ratio is 1: 4, the composition ratio of Si and C becomes 1: 1.
Particularly preferred. This is the photolysis of Si source gas and C source gas
This is considered to be due to the difference in ease of use.
【００２２】[0022]
【発明の効果】本発明の製造方法により、ＳｉＣの単結
晶薄膜を低温で成長させることが可能で、格子欠陥や界
面不整合を起こしにくく、かつバッファ層を基板上に生
成させる工程の不要な、ＳｉＣ単結晶薄膜を容易に提供
することができる。According to the manufacturing method of the present invention, a single crystal thin film of SiC can be grown at a low temperature, lattice defects and interface mismatch do not easily occur, and a step of generating a buffer layer on a substrate is unnecessary. And a SiC single crystal thin film can be easily provided.
【００２３】[0023]
【表１】 [Table 1]
【００２４】[0024]
【表２】 [Table 2]
【００２５】[0025]
【表３】 [Table 3]
【図１】 図１は、本発明のＳｉＣの単結晶薄膜の製造
方法にかかわる装置の説明図である。FIG. 1 is an explanatory view of an apparatus according to a method for producing a single-crystal SiC thin film of the present invention.
【図２】 図２は、本発明の実施例において用いた基板
温度と処理時間及び供給したガスの種類を示すダイヤグ
ラムである。 １：反応室 ２：真空ポンプ ３：基板 ４：ステージ
５：ヒーター ６：材料ガス供給管 ７：材料ガスボンベ ８：レーザ
ー光 ９：ウィンドウ １０：シールドガス供給管FIG. 2 is a diagram showing a substrate temperature, a processing time, and a kind of supplied gas used in an embodiment of the present invention. 1: Reaction chamber 2: Vacuum pump 3: Substrate 4: Stage 5: Heater 6: Material gas supply tube 7: Material gas cylinder 8: Laser light 9: Window 10: Shield gas supply tube
───────────────────────────────────────────────────── フロントページの続き (58)調査した分野(Int.Cl.7，ＤＢ名) H01L 21/205 C30B 25/02 C30B 29/36 ──────────────────────────────────────────────────続 き Continued on front page (58) Field surveyed (Int.Cl. 7 , DB name) H01L 21/205 C30B 25/02 C30B 29/36
Claims (4)
を含有する材料ガスを、基板上に送り、該基板上におい
て該原料ガスを分解させ、該基板上にＳｉＣの薄膜を成
長させる方法において、該基板の温度が、２０〜８００
℃であり、該原料ガスの分解をレーザー光で行い、かつ
該レーザー光が該基板を照射することを特徴とするＳｉ
Ｃ単結晶薄膜の製造方法。1. A method of feeding a material gas containing a source gas serving as a carbon source and a silicon source onto a substrate, decomposing the source gas on the substrate, and growing a SiC thin film on the substrate, When the temperature of the substrate is 20 to 800
C., wherein the decomposition of the source gas is performed by laser light, and the laser light irradiates the substrate.
A method for producing a C single crystal thin film.
〜９０°の角度で該基板を照射する請求項１記載のＳｉ
Ｃ単結晶薄膜の製造方法。2. The method according to claim 1, wherein the laser beam is directed at 45
2. The Si according to claim 1, wherein the substrate is irradiated at an angle of about 90 [deg.].
A method for producing a C single crystal thin film.
に有ることを特徴とする請求項１または２記載のＳｉＣThe SiC according to claim 1 or 2, wherein
単結晶薄膜の製造方法。A method for producing a single crystal thin film.
囲に有ることを特徴とする請求項１または２記載のＳｉ3. Si according to claim 1 or 2, wherein
Ｃ単結晶薄膜の製造方法。A method for producing a C single crystal thin film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP03243817A JP3141441B2 (en) | 1991-09-24 | 1991-09-24 | Method of forming SiC crystal film by laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP03243817A JP3141441B2 (en) | 1991-09-24 | 1991-09-24 | Method of forming SiC crystal film by laser |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0750261A JPH0750261A (en) | 1995-02-21 |
| JP3141441B2 true JP3141441B2 (en) | 2001-03-05 |
Family
ID=17109372
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP03243817A Expired - Fee Related JP3141441B2 (en) | 1991-09-24 | 1991-09-24 | Method of forming SiC crystal film by laser |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3141441B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5267370B2 (en) | 2009-07-23 | 2013-08-21 | ブラザー工業株式会社 | Optical scanner |
-
1991
- 1991-09-24 JP JP03243817A patent/JP3141441B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0750261A (en) | 1995-02-21 |
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