JP3131680B2 - Manufacturing method of copper plated wire - Google Patents
Manufacturing method of copper plated wireInfo
- Publication number
- JP3131680B2 JP3131680B2 JP07265315A JP26531595A JP3131680B2 JP 3131680 B2 JP3131680 B2 JP 3131680B2 JP 07265315 A JP07265315 A JP 07265315A JP 26531595 A JP26531595 A JP 26531595A JP 3131680 B2 JP3131680 B2 JP 3131680B2
- Authority
- JP
- Japan
- Prior art keywords
- copper
- wire
- plated
- thin film
- plating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、銅めっき線の製造
方法に関し、さらに詳しくは、作業性良く，低コスト
に、品質の良い銅めっき線を製造することが出来る銅め
っき線の製造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a copper-plated wire, and more particularly, to a method for manufacturing a copper-plated wire capable of manufacturing a high-quality copper-plated wire with good workability at low cost. .
【０００２】[0002]
【従来の技術】図７に、従来の銅めっき線の一例である
極細同軸線Ｌ１を示す。この極細同軸線Ｌ１は、直径が
０．１０ｍｍ〜０．３０ｍｍ程度の銅線からなる中心導
体１の外周に０．２３ｍｍ程度の厚さの低誘電率絶縁体
２を形成し、その外周に０．０１μｍ〜０．６μｍの厚
さｄ１の高抵抗ニッケル−リン薄膜３を形成した被めっ
き線材の外周に、蒸着法やスパッタ法などの物理的方法
や無電解めっき法などの化学的方法により、数十μｍか
ら数百μｍ（例えば３０μｍ〜１００μｍ）の厚さの銅
めっき層５を形成して製造されたものである。この極細
同軸線Ｌ１の外径は、０．７２ｍｍ〜０．８６ｍｍ程度
となる。2. Description of the Related Art FIG. 7 shows a micro coaxial line L1 which is an example of a conventional copper plated wire. This micro coaxial line L1 is formed by forming a low dielectric constant insulator 2 having a thickness of about 0.23 mm on the outer periphery of a center conductor 1 made of a copper wire having a diameter of about 0.10 mm to 0.30 mm, By applying a physical method such as a vapor deposition method or a sputtering method or a chemical method such as an electroless plating method to the outer periphery of the wire to be plated on which the high-resistance nickel-phosphorus thin film 3 having a thickness d1 of 0.01 μm to 0.6 μm is formed. It is manufactured by forming a copper plating layer 5 having a thickness of several tens μm to several hundreds μm (for example, 30 μm to 100 μm). The outer diameter of this micro coaxial line L1 is about 0.72 mm to 0.86 mm.
【０００３】図８に、従来の銅めっき線の他の一例であ
る極細同軸線Ｌを示す。この極細同軸線Ｌは、直径が
０．１０ｍｍ〜０．３０ｍｍ程度の銅線からなる中心導
体１の外周に０．２３ｍｍ程度の厚さの低誘電率絶縁体
２を形成し、その外周に０．０１μｍ〜０．６μｍ程度
の厚さｄ１の高抵抗ニッケル−リン薄膜３を形成した被
めっき線材の外周に、シアン化合物（シアン化第１銅
や，シアン化ナトリウムまたはシアン化カリウム等）を
多く含有するシアン化銅めっき溶液（強アルカリ性）ま
たは硫酸銅めっき溶液（強酸性）を用いて、１μｍ〜４
μｍ程度の厚さｄ２の銅めっき薄膜中間層４を形成し、
その後、数十μｍから数百μｍ（例えば５０μｍ〜１０
０μｍ）の銅めっき層５を電気めっきにより形成して製
造されたものである。この極細同軸線Ｌの外径は、０．
７２ｍｍ〜０．８６ｍｍ程度となる。前記硫酸銅めっき
溶液の組成は、一般浴では、硫酸銅２２０ｇ／リットル程
度、硫酸（比重１．８４）６０ｇ／リットル程度であり、高
硫酸浴では、硫酸銅７５ｇ／リットル程度、硫酸（比重１．
８４）１９０ｇ／リットル程度である。FIG. 8 shows a micro coaxial line L which is another example of a conventional copper plated wire. This micro coaxial line L is formed by forming a low dielectric constant insulator 2 having a thickness of about 0.23 mm on the outer periphery of a center conductor 1 made of a copper wire having a diameter of about 0.10 mm to 0.30 mm, A large amount of a cyanide compound (cuprous cyanide, sodium cyanide, potassium cyanide, or the like) is contained in the outer periphery of the wire to be plated on which the high-resistance nickel-phosphorous thin film 3 having a thickness d1 of about 0.01 μm to 0.6 μm is formed. 1 μm to 4 μm using a copper cyanide plating solution (strongly alkaline) or a copper sulfate plating solution (strongly acidic)
forming a copper plated thin film intermediate layer 4 having a thickness d2 of about μm;
Then, several tens μm to several hundred μm (for example, 50 μm to 10 μm).
(0 μm) by electroplating. The outer diameter of the extra-fine coaxial line L is 0.1 mm.
It is about 72 mm to 0.86 mm. The composition of the copper sulfate plating solution is about 220 g / liter of copper sulfate and about 60 g / liter of sulfuric acid (specific gravity 1.84) in a general bath, and about 75 g / liter of copper sulfate and sulfuric acid (specific gravity of 1 in a high sulfuric acid bath). .
84) It is about 190 g / liter.
【０００４】なお、高抵抗ニッケル−リン薄膜などの絶
縁層の上に直接に電気めっきで厚めっきを施そうとする
と、給電部と被めっき線材との接触抵抗が大きいため、
通電が不安定となり、焦げを生じたり、絶縁層が溶融し
たりする不都合を生じる。そこで、これを防止するた
め、前記銅めっき薄膜中間層４を形成している。[0004] If an attempt is made to perform thick plating by electroplating directly on an insulating layer such as a high-resistance nickel-phosphorous thin film, the contact resistance between the power supply portion and the wire to be plated is large.
Electricity becomes unstable, resulting in inconvenience such as burning and melting of the insulating layer. Therefore, in order to prevent this, the copper plated thin film intermediate layer 4 is formed.
【０００５】[0005]
【発明が解決しようとする課題】図７に示す極細同軸線
Ｌ１において、蒸着法やスパッタ法などの物理的方法で
銅めっき層５を形成するには、１０-2Torr〜１０-4Torr
程度という高真空にしなければならないため、作業性が
悪い問題点がある。また、大型・複雑な製造装置が必要
であり、生産コストが高くなる問題点がある。また、無
電解めっきなどの化学的方法で銅めっき層５を形成する
と、厚めっきに長時間を要し、生産コストが高くなる問
題点がある。In order to form the copper plating layer 5 on the micro coaxial line L1 shown in FIG. 7 by a physical method such as a vapor deposition method or a sputtering method, 10 −2 Torr to 10 −4 Torr.
There is a problem that workability is poor because it is necessary to make the vacuum as high as possible. Further, there is a problem that a large-sized and complicated manufacturing apparatus is required, and the production cost is increased. Further, when the copper plating layer 5 is formed by a chemical method such as electroless plating, there is a problem that a long time is required for thick plating and the production cost is increased.
【０００６】一方、図８に示す極細同軸線Ｌにおいて、
銅めっき薄膜中間層４を形成するのにシアン化銅めっき
溶液を用いた場合、シアン化合物（毒性が極めて強い）
の取り扱いに細心の注意を払う必要があり、作業性が悪
い問題点がある。また、シアン化合物を回収して再利用
を図るクローズドシステムを整備，運用しなければなら
ず、生産コストが高くなる問題点がある。また、銅めっ
き薄膜中間層４を形成するのに硫酸銅めっき溶液を用い
た場合、給電部での被めっき線材との接触抵抗を下げる
ため、硫酸銅めっき浴の中に給電滑車を設けている。と
ころが、硫酸銅めっき浴の中に給電滑車を設けると、銅
が給電滑車にも析出するため、厚さの管理が困難とな
り、品質が低下する問題点がある。On the other hand, in the micro coaxial line L shown in FIG.
When a copper cyanide plating solution is used to form the copper plating thin film intermediate layer 4, a cyan compound (extremely toxic)
It is necessary to pay close attention to the handling of, and there is a problem of poor workability. In addition, a closed system for recovering and reusing the cyanide must be prepared and operated, which causes a problem that the production cost is increased. When a copper sulfate plating solution is used to form the copper plating thin film intermediate layer 4, a power supply pulley is provided in the copper sulfate plating bath in order to reduce the contact resistance between the power supply unit and the wire to be plated. . However, when a power supply pulley is provided in the copper sulfate plating bath, copper is also deposited on the power supply pulley, so that it is difficult to control the thickness and the quality is deteriorated.
【０００７】そこで、本発明の目的は、作業性良く，低
コストに、品質の良い銅めっき線を製造することが出来
る銅めっき線の製造方法を提供することにある。SUMMARY OF THE INVENTION It is an object of the present invention to provide a method of manufacturing a copper-plated wire that can produce a high-quality copper-plated wire with good workability and at low cost.
【０００８】[0008]
【課題を解決するための手段】第１の観点では、本発明
は、中心導体（１）の外周に低誘電率絶縁体（２）を形
成しその外周に高抵抗薄膜（３）を形成した構造を有す
る被めっき線材（ｓ）を、ノーシアン溶液の硫酸銅めっ
き溶液（Ｑ）またはピロリン酸銅めっき溶液が循環的に
汲み上げられてオーバフロー槽（３１）に常に満たされ
ている銅めっき浴（Ｙ）に直線的に通過させると共に、
前記オーバフロー槽（３１）の外側で線材の走行方向下
流側にのみ設けた給電ローラ（２２）であってその周面
の進行速度が線材の走行速度より１％〜２％だけ遅くな
るように回転されている給電ローラ（２２）の周面に接
触させて前記被めっき線材（ｓ）に給電して銅めっき薄
膜中間層（４）を電気めっきにより形成し、その後、前
記銅めっき薄膜中間層（４）の外周に厚さ数十μｍから
数百μｍの銅めっき層（５）を電気めっきにより形成す
ることを特徴とする銅めっき線の製造方法を提供する。
上記第１の観点の銅めっき線の製造方法では、ノーシア
ン溶液の硫酸銅めっき溶液（Ｑ）またはピロリン酸銅め
っき溶液からなる銅めっき浴を用い、シアン化合物のよ
うな毒性の強い銅めっき浴を用いないから、作業性が良
くなり、製造装置の簡略化が可能となり、生産コストを
低減できる。また、オーバフロー槽（３１）を用いて直
線的に被めっき線材（ｓ）を通過させるから、被めっき
線材（ｓ）の屈曲による高抵抗薄膜（３）の損傷が生じ
ず、品質を向上できる。また、オーバフロー槽（３１）
の外側に設けた給電ローラ（２２）から被めっき線材
（ｓ）に給電するから、銅が給電ローラ（２２）に析出
して厚さの管理が困難となることが抑制され、品質を向
上できる。また、線材の走行方向下流側のみに設けた給
電ローラ（２２）から被めっき線材（ｓ）に給電するか
ら、オーバフロー槽（３１）を通過することにより形成
された低抵抗の銅めっき薄膜中間層（４）に給電ローラ
（２２）が接触するため通電が安定し、品質を向上でき
る。これに対して、線材の走行方向上流側に給電ローラ
を設けても、高抵抗薄膜（３）に給電ローラが接触する
ため損失が大きくなり、好ましくない。また、給電ロー
ラ（２２）の周面の進行速度が線材の走行速度より１％
〜２％ だけ遅くなるように給電ローラ（２２）が回転さ
れているため、給電ローラ（２２）通過後の線材にわず
かなバックテンションが掛かり、線材の弛みを防止でき
る。 According to a first aspect of the present invention, a low dielectric constant insulator (2) is formed on the outer periphery of a center conductor (1) and a high resistance thin film (3) is formed on the outer periphery. A copper plating bath (Y) in which a copper sulfate plating solution (Q) of a cyanide-free solution or a copper pyrophosphate plating solution is cyclically pumped up and the overflow bath (31) is always filled with the wire (s) to be plated having a structure. ) In a straight line,
A power supply roller (22) provided only outside of the overflow tank (31) and on the downstream side in the running direction of the wire , and a peripheral surface thereof.
The traveling speed of the wire is 1% to 2% slower than the traveling speed of the wire.
Contacting the peripheral surface of the feeding roller (22) rotated
The wire (s) to be plated is supplied with power to form a copper-plated thin film intermediate layer (4) by electroplating, and then the copper-plated thin film intermediate layer (4) has a thickness of several tens μm to A method for producing a copper-plated wire, characterized in that a copper plating layer (5) of 100 μm is formed by electroplating.
In the method for producing a copper-plated wire according to the first aspect, a copper plating bath composed of a copper sulfate plating solution (Q) of a cyanide-free solution or a copper pyrophosphate plating solution is used. Since it is not used, the workability is improved, the manufacturing apparatus can be simplified, and the production cost can be reduced. Further, since the wire to be plated (s) is made to pass linearly using the overflow tank (31), the high resistance thin film (3) is not damaged by the bending of the wire to be plated (s), and the quality can be improved. In addition, overflow tank (31)
Since the power is supplied to the wire to be plated (s) from the power supply roller (22) provided on the outer side of the substrate, it is suppressed that copper is deposited on the power supply roller (22) and the thickness control becomes difficult, and the quality can be improved. . Further, since power is supplied to the wire (s) to be plated from the power supply roller (22) provided only on the downstream side in the traveling direction of the wire, the low-resistance copper-plated thin film intermediate layer formed by passing through the overflow tank (31). (4) Power supply roller
Since (22) is in contact, energization is stable and quality can be improved. On the other hand, the feeding roller is located upstream in the running direction of the wire.
, The power supply roller contacts the high resistance thin film (3)
Therefore, the loss increases, which is not preferable. Also, the power supply low
The traveling speed of the peripheral surface of the la (22) is 1% of the traveling speed of the wire.
The feed roller (22) is rotated so as to be delayed by ~ 2%.
The wire after passing through the feed roller (22)
Kana back tension is applied to prevent slack of wire
You.
【０００９】上記構成の銅めっき線の製造方法におい
て、前記硫酸銅めっき溶液（Ｑ）の組成が硫酸銅８０〜
１２０ｇ／リットル，硫酸（比重１．８４）８０〜１２０ｇ
／リットルであり、前記ピロリン酸銅めっき溶液の組成がピ
ロリン酸銅６５〜１０５ｇ／リットル，ピロリン酸カリウム
２３０〜３７０ｇ／リットル，アンモニア水２〜４ミリリットル／
リットルであることが好ましい。従来の一般浴の硫酸銅めっ
き溶液と比べて、銅濃度を抑制し、硫酸の濃度を増大し
ているから、電導度が高くなり、銅めっき浴（Ｙ）の外
部で給電を行っても、十分なスローイング効果を得られ
る。また、従来の高硫酸浴の硫酸銅めっき溶液と比べ
て、銅濃度を増大して、硫酸の濃度を抑制しているか
ら、電流密度を高め、めっき時間を短縮することが出来
る。[0009] In the manufacturing method of the copper plated wire above SL configurations, the composition is copper 80 sulfate copper sulfate plating solution (Q)
120 g / liter, sulfuric acid (specific gravity 1.84) 80-120 g
The composition of the copper pyrophosphate plating solution is 65 to 105 g / liter of copper pyrophosphate, 230 to 370 g / liter of potassium pyrophosphate, and 2 to 4 ml of aqueous ammonia.
It is preferably liter. Compared with a copper sulfate plating solution of traditional general bath, the copper concentration is suppressed, because increasing the concentration of sulfuric acid, the conductivity is increased, even if the power supply external to the copper plating bath (Y) , Sufficient slowing effect can be obtained. Further, as compared with the conventional copper sulfate plating solution in a high sulfuric acid bath, the copper concentration is increased and the sulfuric acid concentration is suppressed, so that the current density can be increased and the plating time can be shortened.
【００１０】第２の観点では、本発明は、上記構成の銅
めっき線の製造方法において、平行に並べられた複数の
被めっき線材（ｓ）を連続走行させ、それら被めっき線
材（ｓ）を１つのオーバフロー槽（３１）内の銅めっき
浴（Ｙ）に同時に通過させ、オーバフロー槽（３１）の
外側で線材の走行方向下流側にのみ設けた１つの給電ロ
ーラ（２２）の周面に接触させて給電し、フラッシュめ
っきにより外周に銅めっき薄膜中間層（４）を形成する
ことを特徴とする銅めっき線の製造方法を提供する。上
記第２の観点の銅めっき線の製造方法では、１つのオー
バフロー槽（３１）と１つの給電ローラ（２２）とで複
数の被めっき線材（ｓ）に同時に銅めっき薄膜中間層
（４）を形成でき、設備の利用効率および生産性を向上
することが出来る。According to a second aspect, the present invention provides a method for manufacturing a copper plated wire having the above-described structure, wherein a plurality of parallel-arranged copper plated wires are provided.
The wire to be plated (s) is continuously run, and the wires to be plated are
Copper plating of material (s) in one overflow tank (31)
Through the bath (Y) at the same time,
One power supply unit provided only on the outside and on the downstream side in the running direction of the wire
Power by contacting the peripheral surface of the
The present invention provides a method for manufacturing a copper-plated wire, wherein a copper-plated thin film intermediate layer (4) is formed on the outer periphery by plating . In the method of manufacturing a copper-plated wire according to the second aspect,
The baffle tank (31) and one power supply roller (22)
Copper plated thin film intermediate layer simultaneously on a number of wires to be plated (s)
(4) can be formed to improve equipment utilization efficiency and productivity
You can do it .
【００１１】なお、上記構成において、低誘電率絶縁体
（２）としては、４弗化エチレン樹脂（ＰolyＴetraＦl
uoroＥthylene；ＰＴＦＥ）や，４弗化エチレン-パーフ
ロロアルキルビニルエーテル共重合体樹脂（ＰerＦluor
oＡlkoxyl;ＰＦＡ）や，４弗化エチレン-６弗化プロピ
レン共重合体樹脂（Ｆluorinated Ｅthylene-Ｐropylen
e；ＦＥＰ）や，４弗化エチレン−エチレン共重合体樹
脂（Ｅthylene ＴetraＦluoroＥthylene；ＥＴＦＥ）な
どの弗素系樹脂を用いることが好ましい。また、高抵抗
薄膜（３）としては、銅めっきの下地としての特性上の
観点から、高抵抗ニッケル−リン薄膜を用いることが好
ましい。また、その高抵抗ニッケル−リン薄膜における
リン組成比率を２％〜１５％とし、その体積固有抵抗を
２０×１０-8Ω・ｍ〜１００×１０-8Ω・ｍとするのが
好ましい。また、銅めっき薄膜中間層（４）を形成する
ための電気めっきとしては、比較的に短時間で薄い銅め
っき薄膜を析出可能な「フラッシュめっき」とするのが
好ましい。In the above configuration, the low dielectric constant insulator (2) is made of tetrafluoroethylene resin (PolyTetraFl).
uoroEthylene; PTFE) and ethylene tetrafluoride-perfluoroalkyl vinyl ether copolymer resin (PerFluor)
oAlkoxyl; PFA), and fluoroinated ethylene-6-fluoropropylene copolymer resin (Fluorinated Ethylene-Propylen)
e; FEP) or a fluorine-based resin such as tetrafluoroethylene-ethylene copolymer resin (Ethylene TetraFluoroEthylene; ETFE). Further, as the high-resistance thin film (3), it is preferable to use a high-resistance nickel-phosphorous thin film from the viewpoint of characteristics as a base for copper plating. Moreover, the high resistance nickel - phosphorus composition ratio in phosphorous thin film is 2% to 15%, preferably its volume resistivity and 20 × 10 -8 Ω · m~100 × 10 -8 Ω · m. Further, as the electroplating for forming the copper plated thin film intermediate layer (4), it is preferable to use "flash plating" which can deposit a thin copper plated thin film in a relatively short time.
【００１２】[0012]
【発明の実施の形態】以下、本発明の銅めっき線の製造
方法により極細同軸線を製造する実施形態について説明
する。なお、これにより本発明が限定されるものではな
い。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment for manufacturing a micro coaxial line by the method for manufacturing a copper plated wire of the present invention will be described below. Note that the present invention is not limited by this.
【００１３】図１に示すように、０．１０ｍｍ〜０．３
０ｍｍの銅線（銅クラッドスチール，銀めっき銅クラッ
ドスチールでもよい）からなる中心導体１の外周に０．
２３ｍｍ程度の厚さの低誘電率絶縁体２を形成し、その
外周に０．０１μｍ〜０．６μｍの厚さｄ１を持つ高抵
抗ニッケル−リン薄膜３を形成した構造の被めっき線材
ｓを製造する。この被めっき線材ｓの外径φａは０．６
６ｍｍ程度である。[0013] As shown in FIG.
The center conductor 1 made of a 0 mm copper wire (copper clad steel or silver-plated copper clad steel) may be placed on the outer periphery of the center conductor 1.
A low-dielectric-constant insulator 2 having a thickness of about 23 mm is formed, and a high-resistance nickel-phosphorous thin film 3 having a thickness d1 of 0.01 μm to 0.6 μm is formed on the outer periphery of the low-dielectric insulator 2. I do. The outer diameter φa of the plated wire s is 0.6
It is about 6 mm.
【００１４】前記被めっき線材ｓの製造工程は、従来と
同様であり、低誘電率絶縁体２を押し出して中心導体１
に被せ、アルコール洗浄，エッチング，酸浸漬などの処
理を施した後、高抵抗ニッケル−リンめっきを施すもの
である。The manufacturing process of the wire rod s to be plated is the same as that of the prior art.
And then subjected to treatments such as alcohol washing, etching, and acid immersion, and then performing high-resistance nickel-phosphorus plating.
【００１５】前記前記低誘電率絶縁体２としては、例え
ば、４弗化エチレン樹脂（ＰＴＦＥ）や，４弗化エチレ
ン−パーフロロアルキルビニルエーテル共重合体樹脂
（ＰＦＡ）や，４弗化エチレン−６弗化プロピレン共重
合体樹脂（ＦＥＰ）や，４弗化エチレン−エチレン共重
合体樹脂（ＥＴＦＥ）などの弗素系樹脂を用いる。The low dielectric constant insulator 2 includes, for example, tetrafluoroethylene resin (PTFE), tetrafluoroethylene-perfluoroalkyl vinyl ether copolymer resin (PFA), and tetrafluoroethylene-6. A fluorine-based resin such as a fluorinated propylene copolymer resin (FEP) or a tetrafluoroethylene-ethylene copolymer resin (ETFE) is used.
【００１６】図２は、前記被めっき線材ｓに銅めっき薄
膜中間層（図３の４）を形成するための予備電解処理装
置の斜視図である。この予備電解処理装置１００では、
平行に並べられた複数の被めっき線材ｓを０．１ｍ／分
〜０．５ｍ／分の速度で連続走行させ（図示の矢印ａ方
向）、それら被めっき線材ｓをオーバフロー槽３１内の
硫酸銅めっき浴Ｙに導入して直線的に通過させ、その硫
酸銅めっき浴Ｙの外側で線材の走行方向下流側に設けた
給電ローラ２２の周面（給電導体面）に接触させて給電
し、フラッシュめっきにより外周に銅めっき薄膜中間層
（図３の４）を形成し、めっき線ｓ’を得るものであ
る。FIG. 2 is a perspective view of a preliminary electrolytic processing apparatus for forming a copper-plated thin film intermediate layer (4 in FIG. 3) on the wire s to be plated. In this preliminary electrolytic treatment apparatus 100,
A plurality of wires to be plated s arranged in parallel are continuously run at a speed of 0.1 m / min to 0.5 m / min (in the direction of arrow a in the drawing), and the wires to be plated are copper sulfate in the overflow tank 31. It is introduced into the plating bath Y, passes straight through, and contacts the peripheral surface (power supply conductor surface) of the power supply roller 22 provided outside the copper sulfate plating bath Y on the downstream side in the running direction of the wire to supply electric power. A copper plated thin film intermediate layer (4 in FIG. 3) is formed on the outer periphery by plating to obtain a plated wire s ′.
【００１７】前記硫酸銅めっき浴Ｙでは、硫酸銅めっき
溶液Ｑがポンプ４１により循環槽３２から汲み上げら
れ、オーバフロー槽３１に常に満たされている。オーバ
フロー槽３１から溢れ出た硫酸銅めっき溶液Ｑは再び前
記循環槽３２に戻されるようになっている。ポンプ４１
で汲み上げられた硫酸銅めっき溶液Ｑによりオーバフロ
ー槽３１内が攪拌されるから、被めっき線ｓへの銅イオ
ンの衝突頻度を増し、めっき効率を向上できる。In the copper sulfate plating bath Y, a copper sulfate plating solution Q is pumped up from a circulation tank 32 by a pump 41 and is always filled in an overflow tank 31. The copper sulfate plating solution Q overflowing from the overflow tank 31 is returned to the circulation tank 32 again. Pump 41
Since the inside of the overflow tank 31 is agitated by the copper sulfate plating solution Q pumped up in step 1, the frequency of collision of copper ions with the wire s to be plated is increased, and the plating efficiency can be improved.
【００１８】前記オーバフロー槽３１の内部にはプロペ
ラＰが設置されており、硫酸銅めっき浴１１を攪拌する
ようになっている。これは、被めっき線ｓへの銅イオン
の衝突頻度を増してめっき効率をさらに向上させるため
である。A propeller P is provided inside the overflow tank 31 to stir the copper sulfate plating bath 11. This is to increase the frequency of collision of copper ions with the wire to be plated s to further improve the plating efficiency.
【００１９】前記硫酸銅めっき溶液Ｑの組成は、硫酸銅
が８０〜１２０ｇ／リットル，硫酸（比重１．８４）が８０
〜１２０ｇ／リットルである。The composition of the copper sulfate plating solution Q is such that copper sulfate is 80 to 120 g / liter and sulfuric acid (specific gravity 1.84) is 80
１２０120 g / l.
【００２０】前記給電ローラ２２の周面には、０．８Ｖ
〜１．６Ｖの定電圧Ｖｃが供給されている。また、給電
ローラ２２の周面には、耐食性，耐摩耗性などを高める
ため、金めっきが施されている。また、めっき線ｓ’に
付いた硫酸銅めっき溶液Ｑが給電ローラ２２に付着しな
いように、給電ローラ２２の上部に設置されたシャワー
ＳＷから純水Ｗを注ぎかけるようになっている（これに
より、硫酸銅めっき溶液Ｑの付着による接触抵抗の増大
を防止できる）。さらに、給電ローラ２２は、その周面
の進行速度がめっき線ｓ’の走行速度より１％〜２％だ
け遅くなるように回転されている（これにより、めっき
線ｓ’にわずかなバックテンションを掛けて、弛みを防
止できる）。給電ローラ２２が線材の走行方向下流側の
みに設けられている理由は、銅めっき薄膜中間層（図３
の４）の導電性を利用してめっき電流を流すためであ
る。The peripheral surface of the power supply roller 22 has a voltage of 0.8 V
A constant voltage Vc of up to 1.6 V is supplied. Further, the peripheral surface of the power supply roller 22 is plated with gold in order to enhance corrosion resistance, wear resistance, and the like. Also, pure water W is poured from a shower SW installed on the upper part of the power supply roller 22 so that the copper sulfate plating solution Q attached to the plating wire s ′ does not adhere to the power supply roller 22. And an increase in contact resistance due to adhesion of the copper sulfate plating solution Q can be prevented). Further, the power supply roller 22 is rotated so that the traveling speed of the peripheral surface thereof is slower by 1% to 2% than the traveling speed of the plating wire s ′ (this causes a slight back tension to the plating wire s ′. To prevent loosening). The reason why the power supply roller 22 is provided only on the downstream side in the traveling direction of the wire is that the copper-plated thin film intermediate layer (FIG.
This is because a plating current is caused to flow using the conductivity of 4).
【００２１】上記のように、硫酸銅めっき溶液Ｑの組成
は、従来の一般浴の硫酸銅めっき溶液と比べて、銅濃度
を抑制し、硫酸の濃度を増大しているから、電導度が高
くなり、オーバフロー槽３１（硫酸銅めっき浴Ｙ）の外
部で給電を行っても、十分なスローイング効果を得られ
る。また、従来の高硫酸浴の硫酸銅めっき溶液と比べ
て、銅濃度を増大して、硫酸の濃度を抑制しているか
ら、電流密度を高め、めっき時間を短縮することが出来
る。この結果、十分なスローイング効果と，高電流密度
を両立することが可能となり、短時間に均一厚で均質な
銅めっき薄膜４を形成することが出来る。As described above, the composition of the copper sulfate plating solution Q suppresses the copper concentration and increases the sulfuric acid concentration as compared with the conventional copper sulfate plating solution of a general bath, so that the conductivity is high. Thus, even if power is supplied outside the overflow tank 31 (copper sulfate plating bath Y), a sufficient throwing effect can be obtained. Further, as compared with the conventional copper sulfate plating solution in a high sulfuric acid bath, the copper concentration is increased and the sulfuric acid concentration is suppressed, so that the current density can be increased and the plating time can be shortened. As a result, it is possible to achieve both a sufficient throwing effect and a high current density, and it is possible to form the copper plating thin film 4 having a uniform thickness and uniformity in a short time.
【００２２】図３は、めっき線ｓ’を示す断面図であ
る。このめっき線ｓ’は、図１に示した被めっき線ｓの
表面すなわち高抵抗ニッケル−リン薄膜３の外周に、１
μｍ〜４μｍ程度の厚さｄ２の銅めっき薄膜中間層４を
形成した構造になっている。FIG. 3 is a sectional view showing the plating line s'. This plated wire s ′ is placed on the surface of the wire to be plated s shown in FIG.
The structure has a copper plated thin film intermediate layer 4 having a thickness d2 of about 4 μm to 4 μm.
【００２３】図４に示すように、前記めっき線ｓの銅め
っき薄膜中間層４の外周に、数十μｍから数百μｍ（例
えば５０μｍ〜１００μｍ）の銅めっき層５を電気めっ
きにより形成して、極細同軸線Ｌを製造する。この極細
同軸線Ｌの外径φは、０．７２ｍｍ〜０．８６ｍｍ程度
となる。このような極細同軸線Ｌは、高周波伝送線路と
して特に有用である。As shown in FIG. 4, a copper plating layer 5 of several tens μm to several hundred μm (for example, 50 μm to 100 μm) is formed by electroplating on the outer periphery of the copper plating thin film intermediate layer 4 of the plating wire s. To manufacture a micro coaxial line L. The outer diameter φ of this micro coaxial line L is about 0.72 mm to 0.86 mm. Such a micro coaxial line L is particularly useful as a high-frequency transmission line.
【００２４】図５は、高抵抗ニッケル−リン薄膜３の厚
さｄ１を０．５μｍとした場合のリン組成比率と，体積
固有抵抗との関係を示すリン組成比率−体積固有抵抗関
係図表である。このリン組成比率−体積固有抵抗関係図
表Ｈ１を参照すると、リン組成比率を２％〜１５％とし
たときに、体積固有抵抗は、２０×１０-8〜１００×１
０-8Ω・ｍの範囲で変化することが判る。FIG. 5 is a table showing the relationship between the phosphorus composition ratio and the volume resistivity when the thickness d1 of the high-resistance nickel-phosphorus thin film 3 is 0.5 μm and the volume resistivity. . Referring to the phosphorus composition ratio-volume resistivity chart H1, when the phosphorus composition ratio is 2% to 15%, the volume resistivity is 20 × 10 −8 to 100 × 1.
It can be seen that it changes in the range of 0 -8 Ω · m.
【００２５】図６は、高抵抗ニッケル−リン薄膜３のリ
ン組成比率を９％とした場合の高抵抗ニッケル−リン薄
膜３の厚さｄ１と，単位長さ当りの抵抗との関係を示す
膜厚−抵抗特性図表である。この膜厚−抵抗特性図表Ｈ
２を参照すると、厚さｄ１が０．０１μｍ〜０．６μｍ
のときに、単位長さ当りの抵抗が３００００Ω／ｍ〜５
００Ω／ｍとなり、高抵抗薄膜として好ましいことが判
る。FIG. 6 shows the relationship between the thickness d1 of the high-resistance nickel-phosphorous thin film 3 and the resistance per unit length when the phosphorus composition ratio of the high-resistance nickel-phosphorous thin film 3 is 9%. It is a thickness-resistance characteristic chart. This film thickness-resistance characteristic chart H
Referring to FIG. 2, the thickness d1 is 0.01 μm to 0.6 μm.
When the resistance per unit length is 30,000Ω / m to 5
The value was 00 Ω / m, which proved to be preferable as a high-resistance thin film.
【００２６】上記の実施形態では、硫酸銅めっき溶液Ｑ
を用いたが、これに代えて、ピロリン酸銅めっき溶液
（弱アルカリ性）を用いることも出来る。ピロリン酸銅
めっき溶液を用いたときには、スローイング効果をさら
に向上し，しかも電流密度をさらに高めることができる
利点がある。なお、ピロリン酸銅めっき溶液は、５０℃
程度に加温することが好ましい。前記ピロリン酸銅めっ
き溶液の組成は、例えばピロリン酸銅が６５〜１０５ｇ
／リットル，ピロリン酸カリウムが２３０〜３７０ｇ／リット
ル，アンモニア水が２〜４ミリリットル／リットルである。In the above embodiment, the copper sulfate plating solution Q
However, instead of this, a copper pyrophosphate plating solution (weakly alkaline) can be used. When a copper pyrophosphate plating solution is used, there is an advantage that the throwing effect can be further improved and the current density can be further increased. In addition, copper pyrophosphate plating solution is 50 ° C.
It is preferable to heat to a degree. The composition of the copper pyrophosphate plating solution is, for example, 65 to 105 g of copper pyrophosphate.
/ Liter, potassium pyrophosphate is 230 to 370 g / liter, and aqueous ammonia is 2 to 4 ml / liter.
【００２７】[0027]
【発明の効果】本発明の銅めっき線の製造方法によれ
ば、シアン化合物を含まない硫酸銅めっき溶液またはピ
ロリン酸銅めっき溶液を用いて被めっき線材に銅めっき
薄膜中間層を形成し、その後、銅めっき層を電気めっき
により形成するから、取り扱いが容易となって作業性が
向上し、しかも特殊な設備が不要となるから生産コスト
を低減できる。また、オーバフロー槽を用いて直線的に
被めっき線材を通過させるから、被めっき線材の屈曲に
よる高抵抗薄膜の損傷が生じず、品質を向上できる。ま
た、めっき槽の外側に設けた給電部から被めっき線材に
給電するから、銅が給電部に析出して厚さの管理が困難
となることが抑制され、品質を向上できる。また、線材
の走行方向下流側に設けた給電部から被めっき線材に給
電するから、めっき槽を通過することにより形成された
銅めっき薄膜中間層により通電が安定し、品質を向上で
きる。According to the method for producing a copper-plated wire of the present invention, a copper-plated thin-film intermediate layer is formed on a wire to be plated using a copper sulfate plating solution or a copper pyrophosphate plating solution containing no cyanide. In addition, since the copper plating layer is formed by electroplating, handling is facilitated, workability is improved, and production costs can be reduced because special equipment is not required. In addition, since the wire to be plated is passed linearly by using the overflow tank, the high resistance thin film is not damaged by the bending of the wire to be plated, and the quality can be improved. In addition, since power is supplied to the wire to be plated from the power supply unit provided outside the plating tank, it is possible to prevent copper from being deposited on the power supply unit and difficult to control the thickness, thereby improving the quality. In addition, since power is supplied to the wire to be plated from the power supply portion provided on the downstream side in the traveling direction of the wire, the current is stabilized by the copper plating thin film intermediate layer formed by passing through the plating tank, and the quality can be improved.
【図１】被めっき線材の断面図である。FIG. 1 is a sectional view of a wire to be plated.
【図２】予備電解処理装置の説明図である。FIG. 2 is an explanatory diagram of a pre-electrolysis treatment device.
【図３】図２の予備電解処理装置により製造されためっ
き線の断面図である。FIG. 3 is a cross-sectional view of a plating wire manufactured by the preliminary electrolytic processing apparatus of FIG.
【図４】本発明により製造された極細同軸線を示す断面
図である。FIG. 4 is a sectional view showing a micro coaxial cable manufactured according to the present invention.
【図５】高抵抗ニッケル−リン薄膜のリン組成比率−体
積固有抵抗関係図表である。FIG. 5 is a chart showing a relationship between a phosphorus composition ratio and a volume resistivity of a high-resistance nickel-phosphorus thin film.
【図６】高抵抗ニッケル−リン薄膜の膜厚−抵抗関係図
表である。FIG. 6 is a table showing the relationship between film thickness and resistance of a high-resistance nickel-phosphorus thin film.
【図７】従来の極細同軸線の一例を示す断面図である。FIG. 7 is a sectional view showing an example of a conventional micro coaxial cable.
【図８】従来の極細同軸線の他の一例を示す断面図であ
る。FIG. 8 is a cross-sectional view showing another example of a conventional micro coaxial line.
１００ 予備電解処理装置 １ 中心導体 ２ 低誘電率絶縁体 ３ 高抵抗ニッケル−リン薄膜 ４ 銅めっき薄膜中間層 ５ 銅めっき層 ２２ 給電ローラ ３１ オーバフロー槽 ３２ 循環槽 ４１ ポンプ ｓ 被めっき線材 ｓ’ めっき線 ＳＷ シャワー Ｑ 硫酸銅めっき溶液 Ｙ 硫酸銅めっき浴 REFERENCE SIGNS LIST 100 Pre-electrolysis treatment device 1 Central conductor 2 Low dielectric constant insulator 3 High-resistance nickel-phosphorus thin film 4 Copper plating thin film intermediate layer 5 Copper plating layer 22 Power supply roller 31 Overflow bath 32 Circulation bath 41 Pump s Wire to be plated s ′ Plating wire SW Shower Q Copper sulfate plating solution Y Copper sulfate plating bath
フロントページの続き (56)参考文献 特開 平６−187847（ＪＰ，Ａ) 特開 平４−103793（ＪＰ，Ａ) 特公 昭60−56239（ＪＰ，Ｂ２) 特公 昭45−20762（ＪＰ，Ｂ１) (58)調査した分野(Int.Cl.7，ＤＢ名) H01B 13/00 H01B 11/18 C25D 5/00 - 7/12 Continuation of the front page (56) References JP-A-6-187847 (JP, A) JP-A-4-103793 (JP, A) JP-B-60-56239 (JP, B2) JP-B-45-20762 (JP) , B1) (58) Fields investigated (Int. Cl. 7 , DB name) H01B 13/00 H01B 11/18 C25D 5/00-7/12
Claims (2)
（２）を形成しその外周に高抵抗薄膜（３）を形成した
構造を有する被めっき線材（ｓ）を、ノーシアン溶液の
硫酸銅めっき溶液（Ｑ）またはピロリン酸銅めっき溶液
が循環的に汲み上げられてオーバフロー槽（３１）に常
に満たされている銅めっき浴（Ｙ）に直線的に通過させ
ると共に、前記オーバフロー槽（３１）の外側で線材の
走行方向下流側にのみ設けた給電ローラ（２２）であっ
てその周面の進行速度が線材の走行速度より１％〜２％
だけ遅くなるように回転されている給電ローラ（２２）
の周面に接触させて前記被めっき線材（ｓ）に給電して
銅めっき薄膜中間層（４）を電気めっきにより形成し、
その後、前記銅めっき薄膜中間層（４）の外周に厚さ数
十μｍから数百μｍの銅めっき層（５）を電気めっきに
より形成することを特徴とする銅めっき線の製造方法。1. A wire to be plated (s) having a structure in which a low dielectric constant insulator (2) is formed on the outer periphery of a center conductor (1) and a high-resistance thin film (3) is formed on the outer periphery thereof is coated with a cyanide solution. The copper sulfate plating solution (Q) or the copper pyrophosphate plating solution is cyclically pumped and linearly passed through the copper plating bath (Y) which is always filled in the overflow tank (31). feed rollers provided only in the running direction downstream side of the wire outside the) (22) met
The traveling speed of the peripheral surface is 1% to 2% of the traveling speed of the wire.
Feeding roller (22) being rotated only to be slow
The copper wire thin film intermediate layer (4) is formed by electroplating by contacting the peripheral surface of
Thereafter, a copper plating layer (5) having a thickness of several tens of μm to several hundreds of μm is formed by electroplating on the outer periphery of the copper plating thin film intermediate layer (4).
において、平行に並べられた複数の被めっき線材（ｓ）
を連続走行させ、それら被めっき線材（ｓ）を１つのオ
ーバフロー槽（３１）内の銅めっき浴（Ｙ）に同時に通
過させ、オーバフロー槽（３１）の外側で線材の走行方
向下流側にのみ設けた１つの給電ローラ（２２）の周面
に接触させて給電し、フラッシュめっきにより外周に銅
めっき薄膜中間層（４）を形成することを特徴とする銅
めっき線の製造方法。2. The method for producing a copper-plated wire according to claim 1, wherein the plurality of wires to be plated are arranged in parallel.
The wire to be plated (s) is
Through the copper plating bath (Y) in the bath flow tank (31).
How to run the wire outside the overflow tank (31)
Peripheral surface of one feeding roller (22) provided only on the downstream side
, And supply power by flash plating.
A method for manufacturing a copper plated wire, comprising forming a plated thin film intermediate layer (4) .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP07265315A JP3131680B2 (en) | 1995-10-13 | 1995-10-13 | Manufacturing method of copper plated wire |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP07265315A JP3131680B2 (en) | 1995-10-13 | 1995-10-13 | Manufacturing method of copper plated wire |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH09106716A JPH09106716A (en) | 1997-04-22 |
| JP3131680B2 true JP3131680B2 (en) | 2001-02-05 |
Family
ID=17415495
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP07265315A Expired - Fee Related JP3131680B2 (en) | 1995-10-13 | 1995-10-13 | Manufacturing method of copper plated wire |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3131680B2 (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100942056B1 (en) * | 2007-07-30 | 2010-02-11 | 임은종 | A plating system for a flexible flat cable |
| KR100949795B1 (en) * | 2007-07-30 | 2010-03-30 | 임은종 | A plating device for a flexible flat cable and the using method thereof |
| JP6261229B2 (en) * | 2013-07-31 | 2018-01-17 | 株式会社潤工社 | coaxial cable |
| KR101642769B1 (en) * | 2015-09-02 | 2016-07-26 | (주)아인스 | Apparatus for anodizing metal wire |
-
1995
- 1995-10-13 JP JP07265315A patent/JP3131680B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH09106716A (en) | 1997-04-22 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5944965A (en) | Method and apparatus for sequentially metalizing polymeric films and products made thereby | |
| CN101743639B (en) | Contact structure for a semiconductor component and a method for production thereof | |
| EP1143038A1 (en) | Electrolytic copper foil with carrier foil and method for manufacturing the same and copper-clad laminate using the electrolytic copper foil with carrier foil | |
| CN104681907A (en) | Radio frequency cable with integrated polytetrafluoroethylene insulating surface silver-plating outer conductor, and machining method for radio frequency cable | |
| EP0156432B1 (en) | Method of manufacturing an optical fibre comprising a coating of a metal | |
| JP2019110022A (en) | Cable for signal transmission | |
| CN102014589A (en) | Method of manufacturing printed wiring board | |
| JP3131680B2 (en) | Manufacturing method of copper plated wire | |
| JP2714922B2 (en) | Manufacturing equipment for ultra-fine composite metal plated wire | |
| JP2006306009A (en) | Two-layer film, method for producing two-layer film and method for manufacturing printed wiring board | |
| JP2929161B2 (en) | Semi-rigid coaxial cable with easy termination and method of manufacturing the same | |
| JP3010336B2 (en) | Coaxial cable and method of manufacturing the same | |
| JP7192539B2 (en) | Conductive fiber, cable, and method for producing conductive fiber | |
| JP3258296B2 (en) | A method for electrodepositing a metal on a non-metallic electrically insulating substrate and a metal-coated polymer film produced by the method, a method for forming a printed circuit on a strip of non-conductive material and a method for producing a printed circuit on the strip. Printed circuit board | |
| JP4137255B2 (en) | coaxial cable | |
| KR20090102170A (en) | Apparatus and method for electro plating of coated conductor | |
| JP2009170113A (en) | Shielded wire | |
| JPH02189811A (en) | Conductor | |
| CN217127563U (en) | Production equipment for composite metal film water electroplating | |
| JP2004018975A (en) | Plating method | |
| CN111462945B (en) | Linear member and method for manufacturing same | |
| JPH09111472A (en) | Formation of metallic conductive layer on fluororesin body surface | |
| JP6075639B2 (en) | coaxial cable | |
| JP2019175678A (en) | Differential signal transmission cable, multicore cable, and method for manufacturing differential signal transmission cable | |
| US5741407A (en) | Method of manufacturing a silver-plated aluminum conductor, apparatus for implementing the method, and a conductor obtained thereby |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20071124 Year of fee payment: 7 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20081124 Year of fee payment: 8 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20091124 Year of fee payment: 9 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20101124 Year of fee payment: 10 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20111124 Year of fee payment: 11 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20111124 Year of fee payment: 11 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20121124 Year of fee payment: 12 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20121124 Year of fee payment: 12 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20131124 Year of fee payment: 13 |
|
| LAPS | Cancellation because of no payment of annual fees |