JP3109839B2 - High frequency thin film transformer - Google Patents
High frequency thin film transformerInfo
- Publication number
- JP3109839B2 JP3109839B2 JP02404731A JP40473190A JP3109839B2 JP 3109839 B2 JP3109839 B2 JP 3109839B2 JP 02404731 A JP02404731 A JP 02404731A JP 40473190 A JP40473190 A JP 40473190A JP 3109839 B2 JP3109839 B2 JP 3109839B2
- Authority
- JP
- Japan
- Prior art keywords
- magnetic
- thin film
- rectangular
- film
- transformer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Description
【０００１】[0001]
【産業上の利用分野】本発明は、コンバータやスイッチ
ング電源等に好適で、導電性パターンにより小形に構成
され高周波特性に優れる高周波用薄膜トランスに関する
ものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a high-frequency thin film transformer which is suitable for a converter, a switching power supply and the like, has a small size by a conductive pattern, and has excellent high-frequency characteristics.
【０００２】[0002]
【従来の技術】近年、電子機器構成部品の小形化・軽量
化の要請は厳しく、高品質な電力が得られるスイッチン
グ電源等においても小形化は必須の課題であり、スイッ
チング周波数の高周波化により、トランス，コンデンサ
等の部品を小さくすることで小形化が進められてきた。
半導体部品やコンデンサでは、ＬＳＩや積層セラミック
コンデンサに代表されるように、早くから薄膜技術が用
いられ、構成部品小形化の要請に充分応えてきた。一
方、トランスはこれまで最も小形化しにくく、また高周
波化に伴う損失増加を抑えることが難しいため、電源の
小形化を妨げる第一の原因であった。このため、現在、
高周波スイッチング電源の体積は、トランスによって決
定されると言っても過言ではない。そこで近年、高周波
化に対応すべく薄膜形成技術を用いた薄膜トランスの研
究が進められ、スイッチング周波数をＭＨｚ帯域まで高
めた小形電源の開発が強く望まれるようになった。2. Description of the Related Art In recent years, there has been a severe demand for downsizing and weight reduction of electronic device components, and downsizing is an indispensable subject even in a switching power supply or the like that can obtain high-quality power. Miniaturization has been promoted by reducing the size of components such as transformers and capacitors.
In semiconductor components and capacitors, thin-film technology has been used since early times, as typified by LSIs and multilayer ceramic capacitors, and has sufficiently responded to the demand for downsizing of components. On the other hand, transformers have been the most difficult to miniaturize so far, and it is difficult to suppress the increase in loss due to the increase in frequency. Because of this,
It is no exaggeration to say that the volume of the high-frequency switching power supply is determined by the transformer. Therefore, in recent years, research on a thin film transformer using a thin film forming technique has been promoted in order to cope with an increase in frequency, and the development of a small power source having a switching frequency raised to a MHz band has been strongly desired.
【０００３】図４に従来の薄膜形成技術で作製された薄
膜トランスの構造模式図を示す。図中、１は基板、２は
絶縁層、３は磁性膜、４は１次導線、５は２次導線を示
している。従来、この種の薄膜トランスの作製は、以下
のように行なわれていた。すなわち、表面が絶縁性であ
る基板１上に、下部導体層をスパッタ等の薄膜形成手法
で成膜し、これをパターンニングして帯状の下部導体を
形成し、この上に絶縁層２をフォトレジスト，Ｓｉ
Ｏ2，ＳｉＯ，Ａｌ2Ｏ3，ポリイミド樹脂等で形成し、
これを平坦化したのち磁性膜層をスパッタ等で形成し、
パターンニングして長方形状の磁性膜３としたのち、こ
の上にふたたび絶縁層２を形成し、上部導体層形成後、
パターンニングで帯状の上部導体を形成して作製され
る。これら上部導体と下部導体とはエッチングによるス
ルーホールを通して接続され、磁性膜３を取り巻くよう
に１次導線４、２次導線５が形成され、トランスが作製
される。FIG. 4 is a schematic structural view of a thin film transformer manufactured by a conventional thin film forming technique. In the figure, 1 is a substrate, 2 is an insulating layer, 3 is a magnetic film, 4 is a primary conductor, and 5 is a secondary conductor. Conventionally, this type of thin film transformer has been manufactured as follows. That is, a lower conductor layer is formed on a substrate 1 having an insulating surface by a thin film forming technique such as sputtering, and the lower conductor layer is patterned to form a strip-shaped lower conductor. Resist, Si
Formed of O 2 , SiO, Al 2 O 3 , polyimide resin, etc.
After flattening this, a magnetic film layer is formed by sputtering or the like,
After patterning into a rectangular magnetic film 3, an insulating layer 2 is formed thereon again, and after forming an upper conductor layer,
It is manufactured by forming a strip-shaped upper conductor by patterning. The upper conductor and the lower conductor are connected through a through hole formed by etching, and a primary conductor 4 and a secondary conductor 5 are formed so as to surround the magnetic film 3, and a transformer is manufactured.
【０００４】図５は上記従来例の薄膜トランスの磁性膜
３と１次導線４，２次導線５の構造を示す平面図であ
る。この図では、分り易く表わすために、各導線４，５
と磁性膜３の間の絶縁層２および基板１は省略してあ
る。従来、平面的に見た磁性膜３は１枚の長方形を成
し、その上面，下面を取り巻くように１次導線４，２次
導線５が交互に巻回される構成となっていた。このよう
な従来例の薄膜トランスによる高周波化のポイントは、
スパッタ等による薄膜形成技術を用いて、薄い導体と磁
性層を形成し高周波における渦電流損失を低減させるこ
とにあった。FIG. 5 is a plan view showing the structure of the magnetic film 3 and the primary and secondary conductors 4 and 5 of the above-described conventional thin film transformer. In this figure, the conductors 4, 5 are shown for easy understanding.
The insulating layer 2 and the substrate 1 between the and the magnetic film 3 are omitted. Conventionally, the magnetic film 3 viewed in a plane has a rectangular shape, and the primary conductor 4 and the secondary conductor 5 are wound alternately so as to surround the upper and lower surfaces thereof. The point of increasing the frequency with such a conventional thin film transformer is
An object of the present invention is to form a thin conductor and a magnetic layer by using a thin film forming technique by sputtering or the like to reduce eddy current loss at a high frequency.
【０００５】[0005]
【発明が解決しようとする課題】しかしながら、上記従
来の技術により、薄膜トランスの磁性層を単に薄膜化す
るだけでは損失の低減が十分ではなく、スイッチング周
波数がＭＨｚを超える領域で特性は著しく劣化する問題
がある。その改善手段として、磁性層３の磁区構造を制
御し、容易磁化方向をトランスの磁路方向に対して垂直
方向に誘導する方法が考えられる。しかし、この処理方
法は、成膜された試料に対し、不活性ガス雰囲気中で磁
界を印加しながら数百℃程度まで加熱する複雑な工程が
必要とされている。また、この方法によれば、この加熱
工程において、構成されている材料の熱膨張率の差，残
留応力等により、導体層・磁性層３の基板１からの剥
離，クラック発生による断線が避けきれず、歩留まりの
低下，信頼性の低下が避けられない。However, according to the above-mentioned prior art, simply reducing the thickness of the magnetic layer of the thin-film transformer does not sufficiently reduce the loss, and the characteristics are significantly deteriorated in the region where the switching frequency exceeds MHz. There's a problem. As a means for improving this, a method of controlling the magnetic domain structure of the magnetic layer 3 and inducing the easy magnetization direction in the direction perpendicular to the magnetic path direction of the transformer can be considered. However, this processing method requires a complicated process of heating the formed sample to about several hundred degrees Celsius while applying a magnetic field in an inert gas atmosphere. Further, according to this method, in this heating step, the conductor layer / magnetic layer 3 can be prevented from being separated from the substrate 1 and disconnected due to cracks due to the difference in the coefficient of thermal expansion of the constituent materials, residual stress, and the like. Therefore, a reduction in yield and a reduction in reliability are inevitable.
【０００６】本発明は、上記問題点を解決するためにな
されたものであり、その目的は、上記熱処理方法を用い
ることなく、磁性膜層の容易磁化方向を使用する周波数
に合わせて簡便に制御し、高周波特性に優れ、かつ作製
歩留りの高い高周波用薄膜トランスを提供することにあ
る。SUMMARY OF THE INVENTION The present invention has been made to solve the above problems, and an object of the present invention is to easily control the direction of easy magnetization of a magnetic film layer according to a frequency to be used without using the above heat treatment method. Another object of the present invention is to provide a high-frequency thin film transformer having excellent high-frequency characteristics and a high production yield.
【０００７】[0007]
【課題を解決するための手段】上記目的を達成するた
め、本発明の高周波用薄膜トランスにおいては、一つま
たは複数の磁性膜層を取り巻くように１次導線および２
次導線を絶縁して螺旋状に巻回する構造の薄膜トランス
であって、前記磁性膜層の少なくとも一つの層を複数個
の矩形磁性薄帯で形成することを特徴としている。 In order to achieve the above object, in the high frequency thin film transformer of the present invention, the primary conductor and the secondary conductor are arranged so as to surround one or a plurality of magnetic film layers.
The following conductor insulated with a thin film transformer structure winding spirally a plurality of at least one layer of the magnetic film layer
Is characterized by being formed by a rectangular magnetic ribbon.
【０００８】[0008]
【作用】本発明の高周波用薄膜トランスでは、その薄膜
トランスを構成する磁性膜層全体を複数個の矩形体に分
割することにより、優れた高周波特性を得るとともに、
磁性膜の容易磁化方向を熱処理方法等によることなく、
簡便に、かつ自在に制御できるようにして、使用する周
波数で最も優れた特性が得られるようにする。また、一
枚の磁性膜を複数の矩形体に分割することで、同時に成
膜過程で生じる膜の残留応力を軽減することにより、膜
の剥離を防止して歩留まりの向上を図る。[Action] In the high-frequency thin film transformer of the present invention, the partial whole magnetic layer constituting the thin film transformer into a plurality of rectangles
By splitting, you can obtain excellent high-frequency characteristics,
The easy magnetization direction of the magnetic film does not depend on the heat treatment method, etc.
The most excellent characteristics can be obtained at the frequency to be used by allowing easy and flexible control. In addition, by dividing one magnetic film into a plurality of rectangular bodies, the residual stress of the film generated during the film formation process is reduced at the same time, thereby preventing the peeling of the film and improving the yield.
【０００９】[0009]
【実施例】以下、本発明の実施例を、図面を参照して詳
細に説明する。Embodiments of the present invention will be described below in detail with reference to the drawings.
【００１０】図１は本発明の第１の実施例の構造を示す
平面図である。本実施例は、図５に示す従来例の磁性膜
が一枚の長方形の形状を持つ薄膜であったのに対し、磁
性膜を複数個の矩形立体に分割して形成したものであ
る。図中、４は１次導線、５は２次導線、６，６，…は
磁性膜を複数の矩形立体に分割した矩形磁性薄帯であ
る。図１においても、分り易くするために矩形磁性薄帯
６と各導線４，５の間の絶縁層，および基板は省略して
ある。この実施例の作製方法は、図４に示した従来例と
同様な工程で行うが、磁性膜層のパターンニングの際に
スリットを入れたマスクを使用することで、一枚の磁性
膜層を複数個の矩形立体に分割する。ここで、本実施例
では、矩形磁性薄帯６の矩形立体の長辺が導線４，５に
より発生する磁界方向と同方向（磁路と垂直方向）の構
造となるように、矩形磁性薄帯６および１次導線４，２
次導線５を形成する。FIG. 1 is a plan view showing the structure of the first embodiment of the present invention. In the present embodiment, the magnetic film of the conventional example shown in FIG. 5 is a thin film having a single rectangular shape, but the magnetic film is formed by dividing it into a plurality of rectangular solids. In the figure, 4 is a primary conductor, 5 is a secondary conductor, 6, 6, ... are rectangular magnetic thin strips obtained by dividing the magnetic film into a plurality of rectangular solids. Also in FIG. 1, the insulating layer and the substrate between the rectangular magnetic ribbon 6 and the conductors 4 and 5 are omitted for easy understanding. The manufacturing method of this embodiment is performed in the same process as in the conventional example shown in FIG. 4, but by using a mask having slits when patterning the magnetic film layer, one magnetic film layer can be formed. Divide into a plurality of rectangular solids. Here, in the present embodiment, the rectangular magnetic ribbon 6 is configured such that the long sides of the rectangular solid of the rectangular magnetic ribbon 6 have the same direction (perpendicular to the magnetic path) as the direction of the magnetic field generated by the conductors 4 and 5. 6 and primary conductors 4, 2
Next conductor 5 is formed.
【００１１】次に、本発明の第２実施例を説明する。図
２は、その第２の実施例の構造を示す平面図である。図
中、４は１次導線、５は２次導線、７，７，…は磁性膜
を複数の矩形立体に分割した矩形磁性薄帯である。図２
においても、分り易くするために矩形磁性薄帯７と各導
線４，５の間の絶縁層、および基板は省略してある。こ
の実施例も、第１の実施例と同様に磁性膜層を複数個の
矩形立体に分割して形成したものであるが、この第２の
実施例では、矩形磁性薄帯７の矩形立体の長辺が各導線
４，５により発生する磁界方向と垂直方向（磁路と同方
向）の構造としている。従って、その作製方法も、第１
の実施例と同様であるが、磁性膜層をパターンニングす
る際のマスクのスリットを変える。Next, a second embodiment of the present invention will be described. FIG. 2 is a plan view showing the structure of the second embodiment. In the figure, 4 is a primary conductor, 5 is a secondary conductor, 7, 7, ... are rectangular magnetic ribbons obtained by dividing the magnetic film into a plurality of rectangular solids. FIG.
Also, the insulating layer between the rectangular magnetic ribbon 7 and each of the conductors 4 and 5 and the substrate are omitted for easy understanding. In this embodiment, the magnetic film layer is divided into a plurality of rectangular solids as in the first embodiment, but in the second embodiment, the rectangular solid of the rectangular magnetic ribbon 7 is formed. The long side has a structure perpendicular to the direction of the magnetic field generated by the conductors 4 and 5 (the same direction as the magnetic path). Therefore, the manufacturing method is also the first
This embodiment is the same as that of the first embodiment except that the slit of the mask used for patterning the magnetic film layer is changed.
【００１２】以上のように構成した第１および第２の実
施例の作用を図５の従来例と比較して述べる。図３はト
ランスの一次側巻線（１次導線４）のインダクタンスの
周波数依存性について、上記の３種のトランスについて
比較したものである。図中、（Ａ）は図５の従来例の薄
膜トランスの場合、（Ｂ）は第１の実施例による薄膜ト
ランスの場合、（Ｃ）は第２の実施例による薄膜トラン
スの場合を示す。The operation of the first and second embodiments configured as described above will be described in comparison with the conventional example of FIG. FIG. 3 shows a comparison of the frequency dependence of the inductance of the primary winding (primary conductor 4) of the three types of transformers. 5A shows the case of the conventional thin film transformer shown in FIG. 5, FIG. 5B shows the case of the thin film transformer according to the first embodiment, and FIG. 5C shows the case of the thin film transformer according to the second embodiment.
【００１３】始めに、（Ａ）の従来例の薄膜トランスで
は、磁性膜３内の異方性が小さいために、低周波領域で
高い透磁率を持つものの、高周波では急激に透磁率の低
下が起こる。そのため、低周波において高いインダクタ
ンス値を持つが、数百ｋＨｚ程度からインダクタンスが
低下し、ＭＨｚ帯での使用は難しい。First, in the conventional thin film transformer shown in FIG. 1A, although the magnetic film 3 has a small anisotropy, it has a high magnetic permeability in a low frequency region, but the magnetic permeability rapidly decreases at a high frequency. Occur. Therefore, although it has a high inductance value at low frequencies, the inductance decreases from about several hundred kHz, and it is difficult to use it in the MHz band.
【００１４】一方、（Ｂ）に示す第１の実施例による矩
形磁性薄帯６の矩形立体の長辺が導線４，５により発生
する磁界方向と同方向の構造を持つ薄膜トランスにおい
ては、磁性体の形状による大きな形状異方性が得られる
ために、周波数の増加に対し追従性が向上し、数ＭＨｚ
の領域まで高い透磁率と高いインダクタンスが得られ
る。On the other hand, in the thin-film transformer having a structure in which the long side of the rectangular solid of the rectangular magnetic ribbon 6 according to the first embodiment shown in FIG. Since a large shape anisotropy is obtained due to the shape of the body, the followability to an increase in frequency is improved, and several MHz
The high magnetic permeability and high inductance can be obtained up to the region.
【００１５】さらに、（Ｃ）に示す第２の実施例による
矩形磁性膜薄帯７の矩形立体の長辺が導線４，５により
発生する磁界方向と垂直方向の構造を持つ薄膜トランス
においては、磁路と磁性体の容易磁化方向が異なるため
に、低周波数領域においては透磁率およびインダクタン
スの値は小さいが、数ＭＨｚを超え、数１０ＭＨｚの領
域では薄膜トランス（Ａ）、薄膜トランス（Ｂ）を凌ぐ
高い透磁率と高いインダクタンスが得られる。Further, in the thin film transformer having a structure in which the long side of the rectangular solid of the rectangular magnetic film ribbon 7 according to the second embodiment shown in FIG. 4C is perpendicular to the direction of the magnetic field generated by the conductors 4 and 5, Since the magnetic path and the easy magnetization direction of the magnetic material are different, the values of the magnetic permeability and the inductance are small in the low frequency region, but exceed several MHz, and in the region of several tens MHz, the thin film transformer (A) and the thin film transformer (B) High magnetic permeability and high inductance that surpass the above.
【００１６】第１および第２の実施例に示したように、
一枚の磁性膜を複数の矩形立体に分割すると、成膜過程
で生じる膜の残留応力が軽減される。また、それと相俟
って容易磁化方向の制御に熱処理方法を使用しないの
で、膜の剥離が防止され、歩留りの向上が特性の向上と
同時に達成される。As shown in the first and second embodiments,
When one magnetic film is divided into a plurality of rectangular solids, the residual stress of the film generated during the film formation process is reduced. In addition, since the heat treatment method is not used for controlling the direction of easy magnetization, peeling of the film is prevented, and the yield is improved simultaneously with the improvement of the characteristics.
【００１７】なお、上記実施例では、磁性膜の容易磁化
方向を、導線４，５に電流を流すことにより発生する磁
界方向に対して、０度（平行）と９０度（直交）の二つ
の場合を例に説明したが、０度（平行）から９０度（直
交）までの任意の方向にすることが可能であり、使用す
るスイッチング周波数で最も優れた特性を得ることがで
きる。また、透磁率をより高めるために、磁性膜層を複
数層に形成することも可能であり、その場合、各層とも
矩形立体に分割しても良いし、一部すなわち１次導線と
２次導線により挟まれる両面の少なくとも一方を上記実
施例で述べた矩形磁性薄帯としても良い。さらに、共振
形コンバータのようにスイッチング周波数が変化する場
合には、複数の方向を持つ矩形磁性薄帯の層を設置する
ことにより、広い周波数領域で特性の優れたトランスを
提供することができる。このように本発明は、その主旨
に沿って種々に応用され、種々の実施態様を取り得るも
のである。In the above embodiment, two directions of 0 degree (parallel) and 90 degrees (orthogonal) with respect to the direction of the magnetic field generated by applying a current to the conductors 4 and 5 are set. Although the case has been described as an example, the direction can be any direction from 0 degrees (parallel) to 90 degrees (orthogonal), and the most excellent characteristics can be obtained at the switching frequency used. In order to further increase the magnetic permeability, it is possible to form the magnetic film layer into a plurality of layers. In this case, each layer may be divided into a rectangular solid, or a part, that is, a primary conductor and a secondary conductor. At least one of the two surfaces sandwiched between them may be the rectangular magnetic ribbon described in the above embodiment. Further, when the switching frequency changes as in a resonance type converter, a transformer having excellent characteristics in a wide frequency range can be provided by providing a layer of a rectangular magnetic ribbon having a plurality of directions. As described above, the present invention can be variously applied according to the gist and can take various embodiments.
【００１８】[0018]
【発明の効果】以上の説明で明らかなように、本発明の
高周波用薄膜トランスによれば、熱処理方法を用いるこ
となく、パターニングにより矩形磁性薄帯を任意の方向
に設置することで、容易磁化方向を簡便に制御すること
ができ、使用する周波数に合わせて優れた高周波数特性
を有するトランスを提供することが可能となる。また、
磁性膜層を複数個の矩形磁性薄帯に分割するので、残留
応力が軽減されるとともに、熱処理方法によらないの
で、膜の剥離が防止され、歩留りを向上できる利点があ
る。As is apparent from the above description, according to the high-frequency thin film transformer of the present invention, the magnetization can be easily magnetized by arranging the rectangular magnetic ribbon in an arbitrary direction by patterning without using a heat treatment method. It is possible to easily control the direction, and to provide a transformer having excellent high-frequency characteristics according to the frequency to be used. Also,
Since the magnetic film layer is divided into a plurality of rectangular magnetic ribbons, the residual stress is reduced, and since the heat treatment method is not used, peeling of the film is prevented and the yield can be improved.
【図１】本発明の第１の実施例の構造を示す平面図FIG. 1 is a plan view showing the structure of a first embodiment of the present invention.
【図２】本発明の第２の実施例の構造を示す平面図FIG. 2 is a plan view showing the structure of a second embodiment of the present invention.
【図３】上記第１および第２の実施例と従来例のインダ
クタンスの周波数依存性を示す比較特性図FIG. 3 is a comparative characteristic diagram showing the frequency dependence of the inductance of the first and second embodiments and the conventional example.
【図４】従来例の構造模式図FIG. 4 is a schematic structural view of a conventional example.
【図５】従来例の構造を示す平面図FIG. 5 is a plan view showing a structure of a conventional example.
４…１次導線、５…２次導線、６，７…矩形磁性薄帯
（磁性膜）。4 ... primary conductor, 5 ... secondary conductor, 6, 7 ... rectangular magnetic ribbon (magnetic film).
───────────────────────────────────────────────────── フロントページの続き (72)発明者 柳沢 佳一 東京都千代田区内幸町一丁目１番６号 日本電信電話株式会社内 (56)参考文献 特開 平２−166707（ＪＰ，Ａ) 特開 昭51−133799（ＪＰ，Ａ) 特開 昭55−77115（ＪＰ，Ａ) 特開 平３−283503（ＪＰ，Ａ) (58)調査した分野(Int.Cl.7，ＤＢ名) H01F 30/00 H01F 17/00 H01F 19/04 H01F 27/24 ──────────────────────────────────────────────────続 き Continued on the front page (72) Inventor Keiichi Yanagisawa Nippon Telegraph and Telephone Corporation, 1-6, Uchisaiwaicho, Chiyoda-ku, Tokyo (56) References JP-A-2-166707 (JP, A) JP-A-51-133799 (JP, A) JP-A-55-77115 (JP, A) JP-A-3-283503 (JP, A) (58) Fields investigated (Int. Cl. 7 , DB name) H01F 30 / 00 H01F 17/00 H01F 19/04 H01F 27/24
Claims (1)
に1次導線および2次導線を絶縁して螺旋状に巻回する構
造の薄膜トランスであって、前記磁性膜層の少なくとも
一つの層全部を、長辺が磁路と直交方向である複数個の
矩形磁性薄帯で形成し、前記矩形磁性薄帯を空隙を設け
て配置することを特徴とする高周波用薄膜トランス。1. A thin film transformer having a structure in which a primary conductor and a secondary conductor are wound in a helical manner so as to surround one or a plurality of magnetic film layers, wherein at least one of said magnetic film layers is provided. All layers are divided into a plurality of layers whose long sides are orthogonal to the magnetic path.
It is formed of a rectangular magnetic ribbon, and the rectangular magnetic ribbon is provided with a gap.
A high-frequency thin-film transformer characterized by being arranged in a vertical position.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP02404731A JP3109839B2 (en) | 1990-12-21 | 1990-12-21 | High frequency thin film transformer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP02404731A JP3109839B2 (en) | 1990-12-21 | 1990-12-21 | High frequency thin film transformer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04221812A JPH04221812A (en) | 1992-08-12 |
| JP3109839B2 true JP3109839B2 (en) | 2000-11-20 |
Family
ID=18514389
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP02404731A Expired - Fee Related JP3109839B2 (en) | 1990-12-21 | 1990-12-21 | High frequency thin film transformer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3109839B2 (en) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2694114B2 (en) * | 1994-02-28 | 1997-12-24 | 株式会社アモルファス・電子デバイス研究所 | Thin film magnetic element and manufacturing method thereof |
| JP3091817B2 (en) * | 1994-03-11 | 2000-09-25 | 株式会社アモルファス・電子デバイス研究所 | Micro magnetic element core |
| JP3290828B2 (en) * | 1994-09-16 | 2002-06-10 | 株式会社東芝 | Thin film inductance element and method of manufacturing the same |
| JP4096049B2 (en) * | 1996-02-08 | 2008-06-04 | 沖電線株式会社 | FPC type common mode filter |
| JP2001143945A (en) * | 1999-11-15 | 2001-05-25 | Matsushita Electric Ind Co Ltd | Transformer for arc welder |
| US7113066B2 (en) * | 2001-07-04 | 2006-09-26 | Koninklijke Philips Electronics, N.V. | Electronic inductive and capacitive component |
| DE102005015745A1 (en) * | 2005-04-06 | 2006-10-12 | Forschungszentrum Karlsruhe Gmbh | Ferro- or ferrimagnetic layer, process for their preparation and their use |
| JP4893366B2 (en) * | 2006-03-31 | 2012-03-07 | Ｔｄｋ株式会社 | Thin film magnetic device |
| WO2013003788A1 (en) * | 2011-06-30 | 2013-01-03 | Analog Devices, Inc. | Isolated power converter with magnetics on chip |
| JP6819564B2 (en) * | 2017-12-19 | 2021-01-27 | 三菱電機株式会社 | Semiconductor devices and their manufacturing methods |
-
1990
- 1990-12-21 JP JP02404731A patent/JP3109839B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH04221812A (en) | 1992-08-12 |
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