JP3108452U - Light-emitting diode heat dissipation frame structure - Google Patents

Light-emitting diode heat dissipation frame structure Download PDF

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JP3108452U
JP3108452U JP2004006336U JP2004006336U JP3108452U JP 3108452 U JP3108452 U JP 3108452U JP 2004006336 U JP2004006336 U JP 2004006336U JP 2004006336 U JP2004006336 U JP 2004006336U JP 3108452 U JP3108452 U JP 3108452U
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emitting diode
heat
light
frame structure
light emitting
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▲呉▼清沂
林正宗
▲せん▼▲えき▼洪
洪瑞華
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金利精密工業股▲ふん▼有限公司
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Abstract

【課題】発生する熱を有効に放熱して、損傷を防ぐ発光ダイオードの放熱フレーム構造を提供する。
【解決手段】発光ダイオードの放熱フレーム構造は、二本のフレーム内のLEDチップを積載する箇所に、厚めの放熱区を形成し、その放熱区によってLEDチップが運転時に発生する熱を吸収する。金属材による吸熱及び放熱効果により、発光ダイオード運転を維持する温度に保たれ、過熱による損傷を防止する。
【選択図】図２
A light-emitting diode heat-dissipating frame structure that effectively dissipates generated heat to prevent damage.
A light-emitting diode heat dissipating frame structure forms a thick heat dissipating area in a place where LED chips in two frames are stacked, and the heat generated by the LED chip is absorbed by the heat dissipating area. Due to the heat absorption and heat dissipation effect by the metal material, the temperature is maintained at the light emitting diode operation, and damage due to overheating is prevented.
[Selection] Figure 2

Description

本考案は、発光ダイオードの放熱フレーム構造に関するもので、放熱効果を高めるフレーム構造である。 The present invention relates to a heat dissipation frame structure of a light emitting diode, and is a frame structure that enhances the heat dissipation effect.

発光ダイオードは、半導体から構成され、半導体チップ内の電子と正孔が結合して光を発生させ、異なる周波数のスペクトルを発生する発光部品である。その構造は、n型半導体とp型半導体が結合してLEDチップを構成する。通電すると、n型半導体の余った電子がp型半導体の正孔へ流れ、電位の差により、n型半導体の電子がp型半導体の正孔へ入る過程で、エネルギーが発生し、そのエネルギーが光となり、異なる波長の光線が発生する。 A light-emitting diode is a light-emitting component that is composed of a semiconductor and generates light by combining electrons and holes in a semiconductor chip to generate spectra of different frequencies. In the structure, an n-type semiconductor and a p-type semiconductor are combined to constitute an LED chip. When energized, surplus electrons in the n-type semiconductor flow to the holes in the p-type semiconductor, and energy is generated in the process of the electrons in the n-type semiconductor entering the holes in the p-type semiconductor due to the potential difference. It becomes light and rays of different wavelengths are generated.

図1に示すのは、一般的な発光ダイオードの基本フレーム構造図で、そのうち、発光ダイオードには二本のフレーム10が設置される。更にLEDチップ20は絶縁方式でフレーム10一本に固定されている。そして金ワイヤー30(もしくは同じ導電機能を具える導線)によって、LEDチップ20の電極層21とフレーム10が連結する。これにより、二本のフレーム間には異なる電圧が加わり、二個の異なる電極(正、負極)のフレーム10が形成され、そして電子と正孔の結合により、エネルギーが放出されて光となる。 FIG. 1 is a basic frame structure diagram of a general light emitting diode, and two frames 10 are installed in the light emitting diode. Furthermore, the LED chip 20 is fixed to one frame 10 by an insulation method. The electrode layer 21 of the LED chip 20 and the frame 10 are connected by the gold wire 30 (or a conductive wire having the same conductive function). As a result, different voltages are applied between the two frames to form a frame 10 of two different electrodes (positive and negative electrodes), and energy is released by the combination of electrons and holes to become light.

解決しようとする問題点は、発光ダイオードのLEDチップ20が運転される時、発生する熱は有効に放熱されないため、発光ダイオードの温度は徐々に上がり、過熱すると、運転できなくなる点である。 The problem to be solved is that when the LED chip 20 of the light emitting diode is operated, the generated heat is not effectively dissipated, so that the temperature of the light emitting diode gradually rises and cannot be operated when overheated.

本考案は、二本のフレーム内のLEDチップを積載する箇所に、厚めの放熱区を形成し、その放熱区によってLEDチップが運転時に発生する熱を吸収する。金属材による吸熱及び放熱効果により、発光ダイオード運転を維持する温度に保たれ、過熱による損傷を防止することを最も主要な特徴とする。 In the present invention, a thick heat dissipation zone is formed at the place where the LED chips in the two frames are stacked, and the heat generated by the LED chip during operation is absorbed by the heat dissipation zone. The main feature is that the heat absorption and heat dissipation effect by the metal material keeps the temperature of the light emitting diode operation and prevents damage due to overheating.

本考案の発光ダイオードの放熱フレーム構造は、発生する熱を有効に放熱して、損傷を防ぐという利点がある。 The heat dissipating frame structure of the light emitting diode according to the present invention has an advantage of effectively radiating the generated heat and preventing damage.

図2は、本考案の発光ダイオード基本構造で、そのうち、二本の異なる電極の金属フレーム10を設置する。更にLEDチップ20を絶縁方式で、フレーム10の一本に固定し、金ワイヤー30もしくは同等の導電機能を具えた導線で、LEDチップ20の電極層21と各フレーム10を連結する。これによって、二本のフレーム間に電圧が加わると、電子と正孔が結合してエネルギーを放出し、光を発する。 FIG. 2 shows a basic structure of a light emitting diode according to the present invention, in which a metal frame 10 having two different electrodes is installed. Further, the LED chip 20 is fixed to one frame 10 by an insulation method, and the electrode layer 21 of the LED chip 20 and each frame 10 are connected by a gold wire 30 or a conductive wire having an equivalent conductive function. Thus, when a voltage is applied between the two frames, electrons and holes are combined to release energy and emit light.

フレーム10は、LEDチップ20を積載した箇所が厚みを持った放熱区11と成る。図3に示すとおり、LEDチップ20は絶縁方式で放熱区11上に固定され、金ワイヤー30もしくは同等の導電機能を具える導線でLEDチップ20の電極層21と各フレームを連結し、これにより、放熱区11がLEDチップ20運転時に発生する熱を吸収し、金属材による吸熱及び放熱効果を得る。発光ダイオードを運転持続できる温度にすれば、過熱による損傷が減少する。 In the frame 10, the place where the LED chip 20 is loaded becomes a heat radiation zone 11 having a thickness. As shown in FIG. 3, the LED chip 20 is fixed on the heat radiation area 11 by an insulation method, and the electrode layer 21 of the LED chip 20 and each frame are connected by a gold wire 30 or a conductive wire having an equivalent conductive function, thereby The heat dissipation zone 11 absorbs heat generated during operation of the LED chip 20, and obtains heat absorption and heat dissipation effects by the metal material. If the light emitting diode is brought to a temperature at which it can continue to operate, damage due to overheating is reduced.

更に、発光ダイオードを箱体40内に固定する。図4に示すとおり、この箱体40はプラスチック材で、PPA(ポリフタルアミド)で製造したものに限らない。その底側の二本のフレーム10に対応する位置には、それぞれ窓41が成形され、そこから二本のフレーム10が外に出て回路板50に固定される。この箱体40により、発光ダイオードを液晶ディスプレイの適する位置に固定するのに便利であり、LEDチップ20から発生する光源によって、液晶ディスプレイが表示され、箱体40の材質によって、異なるプリズム効果が表れ、輝度が向上する。 Further, the light emitting diode is fixed in the box 40. As shown in FIG. 4, the box 40 is a plastic material and is not limited to one made of PPA (polyphthalamide). Windows 41 are respectively formed at positions corresponding to the two frames 10 on the bottom side, and the two frames 10 come out from there and are fixed to the circuit board 50. This box 40 is convenient for fixing the light emitting diode at a suitable position on the liquid crystal display. The liquid crystal display is displayed by the light source generated from the LED chip 20, and the prism effect varies depending on the material of the box 40. , The brightness is improved.

更に、この箱体40内には、一個以上の放熱区11が設置され、そこに異なる色のLEDチップ20を設置する。図5に示すとおり、各LEDチップ20の異なる色を混合して必要な光源色を出す。 Further, one or more heat radiation zones 11 are installed in the box 40, and the LED chips 20 of different colors are installed therein. As shown in FIG. 5, different colors of the LED chips 20 are mixed to produce a necessary light source color.

公知の発光ダイオードフレーム構造指示図である。It is a well-known light emitting diode frame structure instruction | indication figure. 本考案の発光ダイオードフレーム構造指示図である。It is a light emitting diode frame structure instruction diagram of the present invention. 本考案の発光ダイオードフレームの別角度からの指示図である。FIG. 4 is an indication diagram from another angle of the light emitting diode frame of the present invention. 本考案の発光ダイオードフレームと箱体の構造指示図である。FIG. 2 is a structure instruction diagram of a light emitting diode frame and a box according to the present invention. 本考案の発光ダイオードフレームと箱体の別種配置方式指示図である。FIG. 3 is a diagram illustrating a different arrangement method of a light emitting diode frame and a box according to the present invention.

符号の説明Explanation of symbols

10 フレーム
11 放熱区
20 LEDチップ
21 電極層
30 金ワイヤー
40 箱体
41 窓
50 回路板 10 frames
11 Heat dissipation zone
20 LED chip
21 Electrode layer
30 gold wire
40 box
41 windows
50 circuit board

Claims (4)

主に二本の異なる電極の金属フレームから構成された発光ダイオードの放熱フレーム構造において、そのうち、このフレームは、LEDチップ積載箇所に厚みのある放熱区を形成し、その放熱区によってLEDチップの運転時に発生する熱を吸収、放熱し、発光ダイオード運転を維持する温度にすることを特徴とする発光ダイオードの放熟フレーム構造。 In the heat-dissipating frame structure of the light-emitting diode, which is mainly composed of two different electrode metal frames, this frame forms a thick heat-dissipating area at the LED chip mounting location, and the LED chip is operated by the heat-dissipating area. A light emitting diode ripening frame structure characterized by absorbing and dissipating heat generated from time to temperature to maintain a light emitting diode operation. 発光ダイオードの放熱フレーム構造は、液晶ディスプレイに使用され、その発光ダイオードは二本の異なる電極を具えた金属フレーム上にLEDチップを設置し、LEDチップから発する光源により、液晶ディスプレイが表示されるもので、そのうち、フレームは、LEDチップ積載箇所に厚みのある放熱区を設置し、その発光ダイオードを箱体内に固定し、その箱体によって、発光ダイオードを液晶ディスプレイの適する位置に設置しやすいことを特徴とする発光ダイオードの放熱フレーム構造。 The heat-dissipating frame structure of the light-emitting diode is used in a liquid crystal display, and the light-emitting diode has an LED chip installed on a metal frame with two different electrodes, and the liquid crystal display is displayed by a light source emitted from the LED chip. Among them, the frame is to install a thick heat dissipation zone at the LED chip mounting location, fix the light emitting diode in the box, and make it easy to install the light emitting diode at a suitable position on the liquid crystal display. A heat-dissipating frame structure of a light emitting diode. 前記箱体は、材質がプラスチックで、材質はPPA(ポリフタルアミド)に限らないことを特徴とする請求項２記載の発光ダイオードの放熱フレーム構造。 The heat dissipation frame structure for a light emitting diode according to claim 2, wherein the box is made of plastic and is not limited to PPA (polyphthalamide). 前記箱体は、その底側が二本のフレーム位置に対応し、それぞれ窓が成形されて、そこから二本のフレームが外に出ることを特徴とする請求項2記載の発光ダイオードの放熱フレーム構造。 3. The heat dissipating frame structure of a light emitting diode according to claim 2, wherein the box body corresponds to two frame positions on the bottom side, and windows are respectively formed from which the two frames come out. .
JP2004006336U 2004-10-28 2004-10-28 Light-emitting diode heat dissipation frame structure Expired - Lifetime JP3108452U (en)

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006313896A (en) * 2005-05-02 2006-11-16 Samsung Electro Mech Co Ltd Light emitting element package
JP2011159768A (en) * 2010-01-29 2011-08-18 Toshiba Corp Led package and method for manufacturing the led package
JP2011176264A (en) * 2010-01-29 2011-09-08 Toshiba Corp Led package
JP2012182484A (en) * 2012-05-21 2012-09-20 Toshiba Corp Led package
JP2019012854A (en) * 2018-10-16 2019-01-24 大日本印刷株式会社 Semiconductor device and manufacturing method of the same, and light device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006313896A (en) * 2005-05-02 2006-11-16 Samsung Electro Mech Co Ltd Light emitting element package
JP2011159768A (en) * 2010-01-29 2011-08-18 Toshiba Corp Led package and method for manufacturing the led package
JP2011176264A (en) * 2010-01-29 2011-09-08 Toshiba Corp Led package
JP2012182484A (en) * 2012-05-21 2012-09-20 Toshiba Corp Led package
JP2019012854A (en) * 2018-10-16 2019-01-24 大日本印刷株式会社 Semiconductor device and manufacturing method of the same, and light device

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