JP3098288B2 - Conductor composition and ceramic substrate using the same - Google Patents

Conductor composition and ceramic substrate using the same

Info

Publication number
JP3098288B2
JP3098288B2 JP22522791A JP22522791A JP3098288B2 JP 3098288 B2 JP3098288 B2 JP 3098288B2 JP 22522791 A JP22522791 A JP 22522791A JP 22522791 A JP22522791 A JP 22522791A JP 3098288 B2 JP3098288 B2 JP 3098288B2
Authority
JP
Japan
Prior art keywords
oxide
alumina
substrate
conductor
conductor composition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP22522791A
Other languages
Japanese (ja)
Other versions
JPH0547209A (en
Inventor
真志 都外川
純次 石川
明広 小林
武尚 渡辺
日出之 佐藤
清美 小林
修一 野村
幸喜 山田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Metal Mining Co Ltd
Denso Corp
Original Assignee
Sumitomo Metal Mining Co Ltd
Denso Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Metal Mining Co Ltd, Denso Corp filed Critical Sumitomo Metal Mining Co Ltd
Priority to JP22522791A priority Critical patent/JP3098288B2/en
Publication of JPH0547209A publication Critical patent/JPH0547209A/en
Application granted granted Critical
Publication of JP3098288B2 publication Critical patent/JP3098288B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Parts Printed On Printed Circuit Boards (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)
  • Conductive Materials (AREA)

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【産業上の利用分野】本発明は,基板と内部導体層とビ
アホール導体との間の接合性に優れた,導体組成物およ
びそれを用いたセラミック基板に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a conductor composition having excellent bonding properties between a substrate, an internal conductor layer, and a via-hole conductor, and a ceramic substrate using the same.

【0002】[0002]

【従来技術】従来,半導体を実装するための多層セラミ
ック基板においては,その絶縁基板として,例えばアル
ミナ系材料にガラスを加えたセラミックス材料を用い,
比較的低温で焼成したアルミナ系低温焼成基板がある。
そして,従来の多層セラミック基板においては,上記ア
ルミナ系低温焼成基板の間に,例えばAu,Ag,Ag
−Pd,Cu等の導電性に優れた,金属粉末を主成分と
する導体組成物を介在させて,同時焼成し,内部導体層
及びビアホール導体を形成している〔エレクトロニクセ
ラミックス,5月号(1987)〕。そして,上記内部
導体層には,導電性等の基本特性が要求されることは勿
論のこと,基板との焼成収縮率を整合させて該基板の反
り,クラック等の外観不良,該基板と内部導体層とビア
ホール導体との間の剥がれ等の接合不良の発生がないこ
とが強く要望されている。そこで,内部導体層を形成す
る導体組成物としては,例えばアルミナ系材料に,ガラ
スフリットを添加した導体組成物を使用する試みがあ
る。該導体組成物は,主に基板と内部導体層とビアホー
ル導体との焼成収縮率を整合させ,これらを比較的低温
で同時焼成することを特徴とするものである〔Elec
tronicPackaging Technolog
y 1968.1(VOL2,NO1)〕。
2. Description of the Related Art Conventionally, in a multilayer ceramic substrate for mounting a semiconductor, for example, a ceramic material obtained by adding glass to an alumina material is used as an insulating substrate.
There is an alumina-based low-temperature fired substrate fired at a relatively low temperature.
In the conventional multilayer ceramic substrate, for example, Au, Ag, Ag
-An internal conductor layer and a via-hole conductor are formed by co-firing with a conductor composition mainly composed of metal powder having excellent conductivity such as Pd and Cu interposed therebetween [Electronic Ceramics, May issue (1987)]. The inner conductor layer is required not only to have basic characteristics such as conductivity, but also to match the firing shrinkage ratio with the substrate to match the appearance of the substrate, such as warping and cracks, and to prevent the internal conductor layer from having an internal defect. There is a strong demand that there be no occurrence of bonding failure such as peeling between the conductor layer and the via-hole conductor. Therefore, as a conductor composition for forming the internal conductor layer, for example, there is an attempt to use a conductor composition obtained by adding glass frit to an alumina-based material. The conductor composition is characterized by matching the firing shrinkage of the substrate, the internal conductor layer, and the via-hole conductor, and co-firing them at a relatively low temperature [Elec].
TronicPackaging Technology
y 1968.1 (VOL2, NO1)].

【0003】[0003]

【解決しようとする課題】しかしながら,上記後者の従
来技術には,次の問題点がある。即ち,上記導体組成物
は,特定の低温焼成セラミック基板に合致させたもので
ある。そのため,特定の低温焼成セラミック基板におい
ては,反り,剥がれについて満足すべきものでない。
However, the latter conventional technique has the following problems. That is, the conductor composition is adapted to a specific low-temperature fired ceramic substrate. Therefore, the specific low-temperature fired ceramic substrate is not satisfactory with respect to warpage and peeling.

【0004】本発明は,かかる従来の問題点に鑑みてな
されたもので,アルミナ系低温焼成基板の反り,クラッ
ク等の外観不良,該アルミナ系低温焼成基板と内部導体
層とビアホール導体の間に剥がれ等の接合不良のない,
導体組成物およびそれを用いたセラミック基板を提供し
ようとするものである。
SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned conventional problems, and has a problem in appearance such as warping and cracks of an alumina-based low-temperature fired substrate, and between the alumina-based low-temperature fired substrate, an internal conductor layer, and a via-hole conductor. No joint failure such as peeling,
An object of the present invention is to provide a conductor composition and a ceramic substrate using the same.

【0005】[0005]

【課題の解決手段】本発明は,金属粉末,焼結制御剤,
無機結合剤,ビヒクルを含み,アルミナ複合系低温焼成
基板に適用される導体組成物であって,前記金属粉末
は,銀およびパラジウムを含有し,前記焼結制御剤は,
マンガン,ニッケル,これらの化合物を1種以上を含有
し,前記無機結合剤は,アルミナ系低温焼成基板材料の
粉末を含有することを特徴とする導体組成物にある。
The present invention relates to a metal powder, a sintering control agent,
A conductor composition comprising an inorganic binder and a vehicle, applied to an alumina composite low-temperature fired substrate, wherein the metal powder contains silver and palladium, and the sintering control agent comprises:
The conductor composition contains manganese, nickel, and one or more of these compounds, and the inorganic binder contains a powder of an alumina-based low-temperature fired substrate material.

【0006】本発明において,上記マンガン化合物とし
ては,MnO2 等の酸化物,ナフテン酸マンガン等の有
機化合物などがある。また,ニッケル化合物としては,
NiO等の酸化物,ナフテン酸ニッケル等の有機化合物
などがある。また,上記無機結合剤としては,例えばア
ルミナ(Al2 3 )に,酸化鉛(PbO),酸化珪素
(SiO2 ),酸化ホウ素(B2 3 ),酸化チタン
(TiO2 ),酸化リチウム(LiO),酸化カルシウ
ム(CaO)等の各種セラミックス材料を添加したもの
がある。
In the present invention, examples of the manganese compound include oxides such as MnO 2 and organic compounds such as manganese naphthenate. Also, as nickel compounds,
There are oxides such as NiO and organic compounds such as nickel naphthenate. Examples of the inorganic binder include alumina (Al 2 O 3 ), lead oxide (PbO), silicon oxide (SiO 2 ), boron oxide (B 2 O 3 ), titanium oxide (TiO 2 ), and lithium oxide. There are those to which various ceramic materials such as (LiO) and calcium oxide (CaO) are added.

【0007】また,上記ビヒクルとしては,例えばポリ
ビニルブチラール,ジブチルフタレート,エチルセルロ
ース,ターピネオール,エタノール,ブタノール等の各
種の粘結剤及びこれに溶剤を混合したものを用いる。
As the above-mentioned vehicle, for example, various binders such as polyvinyl butyral, dibutyl phthalate, ethyl cellulose, terpineol, ethanol, butanol and the like and a mixture thereof with a solvent are used.

【0008】また,上記金属粉末と焼結制御剤と無機結
合剤とビヒクルとの合計を100重量%(以下,単に%
で表示する)とする。そして,これらの配合量は,例え
ば上記Agを40〜87%,Pdを20%以下,Mn,
Ni,これらの化合物の1種以上をMn又はNi換算で
0.05〜0.6%,上記無機結合剤を1〜20%,上
記ビヒクルを残部とすることが好ましい。上記Agが8
7%を越えるとペースト状態となり得ず,またPbが2
0%を越えるとPdの酸化による割れの発生の問題を生
ずるおそれがある。一方,Agが40%,Pdが20%
未満であると導体組成物中の導体金属の配合割合が足り
なくなり,導体不良を生ずるおそれがある。
Further, the total of the above metal powder, sintering control agent, inorganic binder and vehicle is 100% by weight (hereinafter simply referred to as%
To be displayed). And these compounding amounts are, for example, 40 to 87% of Ag, 20% or less of Pd, Mn,
Ni, one or more of these compounds are preferably 0.05 to 0.6% in terms of Mn or Ni, the inorganic binder is 1 to 20%, and the vehicle is the balance. Ag is 8
If it exceeds 7%, it cannot be in a paste state, and Pb is 2%.
If it exceeds 0%, there is a possibility that a problem of cracking due to oxidation of Pd may occur. On the other hand, Ag is 40% and Pd is 20%.
If the amount is less than the above, the proportion of the conductive metal in the conductive composition may be insufficient, which may cause defective conductors.

【0009】また,上記Mn,Ni,これらの化合物の
含有量が上記の0.6%を越えると導体抵抗が大きくな
るおそれがある。一方,0.05%未満であると,焼結
制御剤としての効果が現れないおそれがある。また,無
機結合剤としては,上記アルミナ系低温焼成基板に用い
る組成物を粉末としたものを用いる。そして,無機結合
剤の含有量が20%を越えると導体抵抗が大きくなるお
それがある。一方,1%未満であると,内部導体層と基
板との接合不良を生じるおそれがある。また,ビヒクル
は上記導体組成物に粘着性を付与し,ペースト状の導体
組成物となし,スクリーン印刷を良好にする。
If the contents of Mn, Ni and these compounds exceed 0.6%, the conductor resistance may be increased. On the other hand, if it is less than 0.05%, the effect as a sintering control agent may not be exhibited. As the inorganic binder, a powdery composition of the alumina-based low-temperature fired substrate is used. If the content of the inorganic binder exceeds 20%, the conductor resistance may increase. On the other hand, if it is less than 1%, there is a possibility that a joint failure between the internal conductor layer and the substrate may occur. In addition, the vehicle imparts tackiness to the above conductor composition to form a paste-like conductor composition, thereby improving screen printing.

【0010】前記アルミナ複合系低温焼成基板材料は,
アルミナと添加物系材料とにより構成されている導体組
成物であることが好ましい。また,前記添加物系材料
は,(a)酸化鉛,酸化ケイ素より成るもの,(b)上
記(a)に酸化亜鉛,酸化チタン,酸化ストロンチウム
の1種以上を添加したもの,(c)酸化ケイ素,酸化ホ
ウ素,酸化リチウム,酸化カルシウムよりなるものの上
記(a)〜(c)のグループより選択された少なくとも
1種の材料により構成されている導体組成物であること
が好ましい。
The alumina composite-based low-temperature fired substrate material is as follows:
The conductor composition is preferably composed of alumina and an additive material. The additive-based material is (a) a material composed of lead oxide and silicon oxide; (b) a material obtained by adding at least one of zinc oxide, titanium oxide and strontium oxide to (a); It is preferable that the conductor composition is composed of silicon, boron oxide, lithium oxide, and calcium oxide, but is composed of at least one material selected from the above groups (a) to (c).

【0011】また,上記アルミナ系低温焼成基板として
は,例えばアルミナ系材料の粉末を主成分とし,これに
ガラス,各種のセラミックス材料を添加したものを用い
る。また,上記同時焼成としては,850〜1000℃
位の比較的低温で,上記内部導体層及びビアホール導体
を同時焼成する。上記多層導体組成物を用いたセラミッ
ク基板は,例えば,次のようにして製造する。即ち,上
記導体組成物は,上記無機結合剤に,上記金属粉末,焼
結制御剤,ビヒクルを添加混合し,ペースト状とする。
Further, as the alumina-based low-temperature fired substrate, for example, a substrate containing, as a main component, a powder of an alumina-based material and adding glass and various ceramic materials thereto is used. In addition, the co-firing is performed at 850 to 1000 ° C.
The internal conductor layer and the via-hole conductor are simultaneously fired at a relatively low temperature. The ceramic substrate using the multilayer conductor composition is manufactured, for example, as follows. That is, the above-mentioned conductor composition is mixed with the above-mentioned inorganic binder, the above-mentioned metal powder, a sintering control agent, and a vehicle to form a paste.

【0012】一方,上記アルミナ系低温焼成基板は,A
2 3に,各種の上記セラミックス材料を添加した上
記アルミナ系低温焼成基板材料を用いて,ドクターブレ
ード法によりグリーンシートを作成する。次に,このグ
リーンシートに,ビアホール用の貫通穴を設ける。次い
で,該グリーンシートに,上記導体組成物を,例えばス
クリーン印刷法により塗布して,内部導体層を形成す
る。また,これと同時に,上記貫通穴内に,上記導体組
成物を充填してビアホール導体を形成する。その後,こ
れらのグリーンシートを多層に積層し,脱脂した後に,
例えば850〜1000℃の比較的低温で同時焼成す
る。
On the other hand, the alumina-based low-temperature fired substrate is
A green sheet is formed by a doctor blade method using the above-mentioned alumina-based low-temperature firing substrate material obtained by adding various types of the above-mentioned ceramic materials to l 2 O 3 . Next, a through hole for a via hole is provided in the green sheet. Next, the above-described conductor composition is applied to the green sheet by, for example, a screen printing method to form an internal conductor layer. At the same time, the via composition is filled in the through hole with the conductor composition. Then, after laminating these green sheets in multiple layers and degreasing,
For example, simultaneous firing is performed at a relatively low temperature of 850 to 1000 ° C.

【0013】次に,上記導体組成物を用いて製造したセ
ラミック基板は,アルミナ系低温焼成セラミック多層基
板の,基板間に設けられた内部導体層と,該内部導体層
の間を導通させるビアホール導体に,上記導体組成物を
用い,一体的に同時焼成されたものである。上記内部導
体層,ビアホール導体に用いる導体組成物としては,上
記した種々の態様のものを用いる。
Next, a ceramic substrate manufactured by using the above-described conductor composition is an alumina-based low-temperature fired ceramic multilayer substrate, an internal conductor layer provided between the substrates, and a via-hole conductor for conducting between the internal conductor layers. And co-fired integrally using the above conductor composition. As the conductor composition used for the internal conductor layer and the via-hole conductor, the above-described various embodiments are used.

【0014】また,このセラミック基板に用いるアルミ
ナ系低温焼成セラミック多層基板は,上記した種々の態
様のアルミナ系低温焼成材料と同様の材料を用いること
が好ましい。
The alumina-based low-temperature fired ceramic multilayer substrate used for the ceramic substrate is preferably made of the same material as the alumina-based low-temperature fired material in the above-described various embodiments.

【0015】[0015]

【作用及び効果】本発明においては,内部導体層及びビ
アホール導体を形成するための導体組成物として,上記
成分の金属粉末と焼結制御剤と無機結合剤とビヒクルと
よりなる導体組成物を用いている。また,該金属粉末
は,Ag及びPdを含有している。このAg,Pdは,
比較的融点が低く,また優れた導電性材料である。その
ため,上記導体組成物を用いて形成した内部導体層は,
例えば850〜1000℃の比較的低温で,アルミナ系
低温焼成基板との同時焼成が可能となり,優れた導電性
を有することになる。
In the present invention, a conductor composition comprising the above-mentioned metal powder, a sintering control agent, an inorganic binder and a vehicle is used as the conductor composition for forming the internal conductor layer and the via-hole conductor. ing. The metal powder contains Ag and Pd. This Ag, Pd
It has a relatively low melting point and is an excellent conductive material. Therefore, the inner conductor layer formed using the above conductor composition is
At a relatively low temperature of, for example, 850 to 1000 ° C., simultaneous firing with an alumina-based low-temperature firing substrate becomes possible, resulting in excellent conductivity.

【0016】また,上記焼結制御剤は,Mn,Ni,こ
れらの化合物のいずれか1種又は2種以上を含有してい
る。そして,これらは,AgとPdとの粒界に存在して
おり,これら相互の焼結を抑制し調整している。そのた
め,導体組成物の緻密化が遅れて,導体組成物とアルミ
ナ系低温焼成基板の焼成収縮率が高温域(例えば900
〜950℃)において,近似し整合してくる(図2参
照)。その結果,上記アルミナ系低温焼成基板は,反
り,クラック等の接合不良を生ずることがなく,該アル
ミナ系低温焼成基板と内部導体層との間に剥がれ等の接
合不良を生ずることがない。また,このような特性は,
上記アルミナ系低温焼成基板とビアホール導体,該ビア
ホール導体と内部導体層との間についても,同様のこと
がいえる。
The sintering control agent contains one or more of Mn, Ni, and these compounds. These are present at the grain boundaries between Ag and Pd, and the mutual sintering is suppressed and adjusted. Therefore, the densification of the conductor composition is delayed, and the sintering shrinkage of the conductor composition and the alumina-based low-temperature sintering substrate is in a high temperature range (for example, 900
(Approximately 950 ° C.) and match (see FIG. 2). As a result, the alumina-based low-temperature fired substrate does not cause bonding defects such as warpage and cracks, and does not cause bonding defects such as peeling between the alumina-based low-temperature fired substrate and the internal conductor layer. In addition, such characteristics
The same can be said for the above-described alumina-based low-temperature fired substrate and the via-hole conductor, and between the via-hole conductor and the internal conductor layer.

【0017】一方,上記導体組成物においては,無機結
合剤として上記アルミナ系低温焼成基板材料を用いてい
る。そのため,上記導体組成物により形成した内部導体
層及びビアホール導体とアルミナ系低温焼成基板とは,
これらを構成する材料の一部が直接反応し,一体化す
る。その結果,これらの間の接合性が向上し,導通の信
頼性が高まる。また,上記ビヒクルを含有しているの
で,優れた粘性を有するため,上記導体組成物をスクリ
ーン印刷等により塗布する際の作業性が向上する。
On the other hand, in the above conductor composition, the above-mentioned alumina-based low-temperature fired substrate material is used as an inorganic binder. Therefore, the inner conductor layer and via-hole conductor formed from the above conductor composition and the alumina-based low-temperature fired substrate are:
Some of the materials constituting these react directly and are integrated. As a result, the bondability between them is improved, and the reliability of conduction is improved. Further, since the composition contains the vehicle, the composition has excellent viscosity, so that the workability when applying the conductor composition by screen printing or the like is improved.

【0018】また,上記セラミック基板は,上記のごと
く優れた性質を有する導体組成物を用いて一体的に同時
焼成しているので,基板全体が反り,クラック等の外観
不良及び層間の剥がれ等の接合不良を生ずることがな
い。以上のごとく,本発明によれば,反り,クラック等
の外観不良を生ずることがなく,該アルミナ系低温焼成
基板と内部導体層,ビアホール導体との間に,剥がれ等
の接合不良を生ずることがない,導体組成物およびそれ
を用いたセラミック基板を提供することができる。
Further, since the ceramic substrate is integrally and simultaneously fired using the conductor composition having excellent properties as described above, the entire substrate is warped, defective in appearance such as cracks, peeling between layers, and the like. No bonding failure occurs. As described above, according to the present invention, poor joints such as peeling between the alumina-based low-temperature fired substrate and the internal conductor layer and via-hole conductor can be prevented without causing appearance defects such as warpage and cracks. The present invention can provide a conductive composition and a ceramic substrate using the same.

【0019】[0019]

【実施例】【Example】

実施例1〜9,比較例1,2 以下,本発明にかかる実施例を比較例と共に説明する。
本例においては,まず導体組成物及びアルミナ系低温焼
成基板用の基板組成物をそれぞれ調整した。次いで,該
基板組成物を用いて,ドクターブレード法により,厚み
が約0.2mmのグリーンシートを成形した。そして,
該グリーンシートに,ビアホール形成用の貫通穴を設け
た後,上記導体組成物を用いて,スクリーン印刷法によ
り,所定の位置に内部導体層及びビアホール導体を形成
した。
Examples 1 to 9 and Comparative Examples 1 and 2 Hereinafter, examples according to the present invention will be described together with comparative examples.
In this example, first, a conductor composition and a substrate composition for an alumina-based low-temperature fired substrate were respectively prepared. Next, using the substrate composition, a green sheet having a thickness of about 0.2 mm was formed by a doctor blade method. And
After the green sheet was provided with a through hole for forming a via hole, an internal conductor layer and a via hole conductor were formed at predetermined positions using the above-mentioned conductor composition by a screen printing method.

【0020】そして,図1に示すごとく,内部導体層2
及びその間を導通させるビアホール導体3を有するアル
ミナ系低温焼成基板1を,多層に積層して,850〜1
000℃の比較的低温で,同時焼成した。これにより,
同図に示すごとく,4層に積層されたアルミナ系低温焼
成基板1と,該アルミナ系低温焼成基板1に設けられた
内部導体層2と,該内部導体層2間を導通させるビアホ
ール導体3とよりなるアルミナ系のセラミック基板を得
た。
Then, as shown in FIG.
And an alumina-based low-temperature fired substrate 1 having via-hole conductors 3 for electrical conduction between the substrates,
Co-firing was performed at a relatively low temperature of 000 ° C. This gives
As shown in the figure, an alumina-based low-temperature fired substrate 1 laminated in four layers, an internal conductor layer 2 provided on the alumina-based low-temperature fired substrate 1, and a via-hole conductor 3 for conducting between the internal conductor layers 2 are provided. An alumina-based ceramic substrate was obtained.

【0021】そして,上記セラミック基板につき,ビア
ホール導体3の周縁におけるクラック,ふくれの外観不
良の有無を判定して,ビアホール特性を得た。また,ア
ルミナ系低温焼成基板1と内部導体層2との間におい
て,剥がれについて,接合不良の有無を判定して,内部
導体層の特性を得た。なお,上記ビアホール特性は実施
例1〜5,内部導体層の特性については実施例6〜9に
ついて測定した。これらの結果を,表1に示す。また,
上記基板及び導体組成物の成分の配合割合を表1に,ま
た表1中の基板A〜Cについての,主としてアルミナ系
低温焼成材料の配合割合を表2に示す。なお,これらの
配合量は,全て重量%で示す。
Then, the presence or absence of cracks and blisters on the periphery of the via-hole conductor 3 was determined for the ceramic substrate to obtain via-hole characteristics. In addition, between the alumina-based low-temperature fired substrate 1 and the internal conductor layer 2, the presence or absence of a bonding failure was determined for peeling, and the characteristics of the internal conductor layer were obtained. The via hole characteristics were measured in Examples 1 to 5 and the characteristics of the internal conductor layer were measured in Examples 6 to 9. Table 1 shows the results. Also,
Table 1 shows the mixing ratios of the components of the substrate and the conductor composition, and Table 2 shows the mixing ratios of the alumina-based low-temperature firing materials for the substrates A to C in Table 1. In addition, all of these compounding amounts are shown by weight%.

【0022】[0022]

【表1】 [Table 1]

【0023】[0023]

【表2】 [Table 2]

【0024】表1において焼結制御剤の中,NiはNi
Oの状態で,またMnはMnO2 の状態で添加した。ま
た,無機結合剤は,当該実施例,比較例に用いた上記基
板と同一組成物の粉末(粒径2.0〜3.0μm)を用
いた。また,ビヒクルとしては,エチルセルロースとタ
ーピンネオールとの混合物を用いた。なお,上記導体組
成物を調整するに際しては,ポットミルを用いて,上記
組成物を充分に混合した。
In Table 1, among the sintering control agents, Ni is Ni
O and Mn were added in the form of MnO 2 . The inorganic binder used was a powder (particle size: 2.0 to 3.0 μm) of the same composition as the substrate used in the examples and comparative examples. As a vehicle, a mixture of ethylcellulose and turpinneol was used. In preparing the conductor composition, the composition was sufficiently mixed using a pot mill.

【0025】次に,上記両特性の測定結果について,説
明する。表1より知られるごとく,実施例1〜5は,ビ
アホール導体3(図1)の周縁部には,クラックの発生
は全く見られなかった。これに対し,比較例1は明らか
にクラックが見られた。また,ビアホール導体3の周縁
部のふくれについては,実施例1〜5は微小なものがル
ーペにより観察された。これに対し,比較例1には大き
なふくれが観察された。なお,実施例6〜9について
は,ビアホール特性は測定しなかった。
Next, the measurement results of the two characteristics will be described. As can be seen from Table 1, in Examples 1 to 5, no cracks were observed at the periphery of the via-hole conductor 3 (FIG. 1). On the other hand, in Comparative Example 1, cracks were clearly observed. Regarding the blisters on the periphery of the via-hole conductor 3, in Examples 1 to 5, minute ones were observed with a loupe. On the other hand, in Comparative Example 1, large blisters were observed. In Examples 6 to 9, the via hole characteristics were not measured.

【0026】また,表1より知られるごとく,実施例6
〜9は,アルミナ系低温焼成基板1と内部導体層2(図
1)の間には,剥がれは全く見られなかった。これに対
し,比較例2には剥がれが見られた。また,反りについ
ては,実施例6〜9は,わずかに小さな反りを生じてい
た。これに対し,比較例2には,かなり大きな反りを生
じていた。なお,実施例1〜5については,内部導体層
の特性は測定しなかった。
Further, as can be seen from Table 1, Embodiment 6
In Nos. 9 to 9, no peeling was observed between the alumina-based low-temperature fired substrate 1 and the internal conductor layer 2 (FIG. 1). In contrast, peeling was observed in Comparative Example 2. As for warpage, Examples 6 to 9 produced slightly smaller warpage. On the other hand, Comparative Example 2 had a considerably large warpage. In Examples 1 to 5, the characteristics of the internal conductor layer were not measured.

【0027】次に,図2は,導体組成物,アルミナ系低
温焼成基板の焼成収縮率(%)と焼成温度との関係を示
すグラフである。同グラフにおいて,曲線Xはアルミナ
系低温焼成基板1,曲線Yは実施例2における導体組成
物,曲線Zは比較例1の導体組成物の各測定値を示す。
Next, FIG. 2 is a graph showing the relationship between the firing temperature and the firing shrinkage (%) of the conductor composition and the alumina-based low-temperature firing substrate. In the same graph, curve X indicates the measured values of the alumina-based low-temperature fired substrate, curve Y indicates the measured values of the conductor composition in Example 2, and curve Z indicates the measured values of the conductor composition of Comparative Example 1.

【0028】同図に示すごとく,600〜950℃の焼
成温度においては,XとYとの焼成収縮率の間に,Y<
Xの関係がある。そして,昇温と共にYはほぼXに沿っ
て収縮し,950℃付近では,両者の焼成収縮率はほぼ
一致する。そのため,本発明においては,上記アルミナ
系低温焼成基板と内部導体層は,反り,クラック等の外
観不良を生じない。また,両者の間には,剥がれ等の接
合不良を生じない。また,このような特性は,アルミナ
系低温焼成基板とビアホール導体,該ビアホール導体と
内部導体層との間についても,同様のことがいえる。
As shown in the figure, at a firing temperature of 600 to 950 ° C., the firing shrinkage ratio between X and Y is Y <Y.
There is a relationship of X. Then, as the temperature rises, Y shrinks substantially along X, and at about 950 ° C., the firing shrinkage rates of the two substantially match. For this reason, in the present invention, the alumina-based low-temperature fired substrate and the internal conductor layer do not cause appearance defects such as warpage and cracks. Also, there is no occurrence of bonding failure such as peeling between the two. In addition, such characteristics can be said to be the same for the alumina-based low-temperature fired substrate and the via-hole conductor, and between the via-hole conductor and the internal conductor layer.

【0029】これに対して,比較例(曲線Z)の導体組
成物は,600〜950℃の間において,大きな収縮
(同図b)を示し,上記基板(曲線x)との間に大きな
収縮差を有している。そのため,基板の反り,上記剥が
れの原因となる。また,該比較例の導体組成物は,88
0℃付近まで大きく収縮した後,逆に膨張している(同
図a)。そのため,ビアホールのふくれ,基板反りの原
因となる。
On the other hand, the conductor composition of the comparative example (curve Z) shows a large shrinkage (b in the figure) between 600 and 950 ° C., and a large shrinkage with the substrate (curve x). Have a difference. As a result, the substrate may be warped or peeled off. The conductor composition of the comparative example was 88
After contracting largely to around 0 ° C., it expands in the opposite direction (FIG. 7A). For this reason, the via holes may be swollen and the substrate may be warped.

【図面の簡単な説明】[Brief description of the drawings]

【図1】実施例にかかるセラミック基板の断面図。FIG. 1 is a sectional view of a ceramic substrate according to an embodiment.

【図2】実施例及び比較例において,焼成温度(℃)と
焼成収縮率(%)との関係を示すグラフ。
FIG. 2 is a graph showing the relationship between firing temperature (° C.) and firing shrinkage (%) in Examples and Comparative Examples.

【符号の説明】[Explanation of symbols]

1...アルミナ系低温焼成基板, 2...内部導体層, 3...ビアホール導体, 1. . . 1. Alumina-based low-temperature firing substrate, . . 2. inner conductor layer; . . Via hole conductor,

───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.7 識別記号 FI H05K 3/46 H01L 23/12 Q 23/14 C (72)発明者 小林 明広 愛知県刈谷市昭和町1丁目1番地 日本 電装株式会社内 (72)発明者 渡辺 武尚 愛知県刈谷市昭和町1丁目1番地 日本 電装株式会社内 (72)発明者 佐藤 日出之 愛知県刈谷市昭和町1丁目1番地 日本 電装株式会社内 (72)発明者 小林 清美 愛知県刈谷市昭和町1丁目1番地 日本 電装株式会社内 (72)発明者 野村 修一 東京都港区新橋5丁目11番3号 住友金 属鉱山株式会社内 (72)発明者 山田 幸喜 東京都港区新橋5丁目11番3号 住友金 属鉱山株式会社内 (56)参考文献 特開 昭61−22685(JP,A) 特開 平1−260711(JP,A) 特開 平1−298090(JP,A) (58)調査した分野(Int.Cl.7,DB名) H01B 1/22 H01L 23/12 H01L 23/15 H05K 1/03 630 H05K 1/09 H05K 3/46 ────────────────────────────────────────────────── ─── Continued on the front page (51) Int.Cl. 7 Identification code FI H05K 3/46 H01L 23/12 Q 23/14 C (72) Inventor Akihiro Kobayashi 1-1-1 Showa-cho, Kariya-shi, Aichi Japan Japan Denso Inside (72) Inventor Takehisa Watanabe 1-1-1, Showa-cho, Kariya-shi, Aichi Japan Inside Denso Corporation (72) Inventor Hideyuki Sato 1-1-1, Showa-cho, Kariya-shi, Aichi Japan Inside Denso Corporation ( 72) Inventor Kiyomi Kobayashi 1-1-1 Showa-cho, Kariya-shi, Aichi Japan Inside of Denso Co., Ltd. (72) Inventor Shuichi Nomura 5-1-1-3 Shimbashi, Minato-ku, Tokyo Sumitomo Metal Mining Co., Ltd. (72) Invention Person Koki Yamada 5-11-3, Shimbashi, Minato-ku, Tokyo Sumitomo Metal Mining Co., Ltd. (56) References JP-A-61-22685 (JP, A) JP-A-1-260711 (JP, A) JP Hei 1-298090 (JP, A) (58) Fields investigated (Int. Cl. 7 , DB name) H01B 1/22 H01L 23/12 H01L 23/15 H05K 1/03 630 H05K 1/09 H05K 3/46

Claims (7)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】 金属粉末,焼結制御剤,無機結合剤,ビ
ヒクルを含み,アルミナ複合系低温焼成基板に用いられ
る導体組成物であって,前記金属粉末は,銀およびパラ
ジウムを含有し,前記焼結制御剤は,マンガン,ニッケ
ル,これらの化合物を1種以上を含有し,前記無機結合
剤は,アルミナ系低温焼成基板材料の粉末を含有するこ
とを特徴とする導体組成物。
1. A conductor composition for use in an alumina composite low-temperature firing substrate, comprising a metal powder, a sintering control agent, an inorganic binder, and a vehicle, wherein the metal powder contains silver and palladium. A conductor composition, wherein the sintering control agent contains one or more of manganese, nickel, and these compounds, and the inorganic binder contains a powder of an alumina-based low-temperature firing substrate material.
【請求項2】 前記金属粉末,前記焼結制御剤,前記無
機結合剤,前記ビヒクルの4成分の合計を100重量%
としたとき,前記金属粉末については,銀粉末は40〜
87%であり,パラジウム粉末は20%以下であり,前
記焼結制御剤については,マンガン,ニッケル,これら
の化合物の1種以上を,Mn,Ni換算で0.05〜
0.6%含有し,前記無機結合剤については,アルミナ
系低温焼成基板材料の粉末を1〜20%含有し,前記ビ
ヒクルは,残部であることを特徴とする請求項1記載の
導体組成物。
2. The total of the four components of the metal powder, the sintering control agent, the inorganic binder, and the vehicle is 100% by weight.
When the metal powder is used, the silver powder is 40 to
87%, palladium powder is 20% or less, and the sintering control agent is composed of manganese, nickel, and one or more of these compounds in an amount of 0.05 to 0.05 in terms of Mn and Ni.
2. The conductor composition according to claim 1, wherein the inorganic binder comprises 1 to 20% of an alumina-based low-temperature fired substrate material powder, and the vehicle is the balance. .
【請求項3】 前記アルミナ複合系低温焼成基板材料
は,アルミナと添加物系材料とにより構成されているこ
とを特徴とする請求項2記載の導体組成物。
3. The conductor composition according to claim 2, wherein the alumina composite low-temperature fired substrate material is composed of alumina and an additive material.
【請求項4】 前記添加物系材料は,(a)酸化鉛,酸
化ケイ素より成るもの,(b)上記(a)に酸化亜鉛,
酸化チタン,酸化ストロンチウムの1種以上を添加した
もの,(c)酸化ケイ素,酸化ホウ素,酸化リチウム,
酸化カルシウムより成るものの上記(a)ないし(c)
のグループより選択された少なくとも1種の材料により
構成されていることを特徴とする請求項3記載の導体組
成物。
4. The additive-based material comprises (a) lead oxide and silicon oxide, and (b) zinc oxide,
One or more of titanium oxide and strontium oxide, (c) silicon oxide, boron oxide, lithium oxide,
(A) to (c) comprising calcium oxide
The conductor composition according to claim 3, wherein the conductor composition is made of at least one material selected from the group consisting of:
【請求項5】 アルミナ系低温焼成セラミック多層基板
の,該基板間に設けられた内部導体層と,該内部導体層
の間を導通させるビアホール導体に,請求項1又は請求
項2記載の態様の導体組成物を用い,一体的に同時焼成
して成ることを特徴とするセラミック基板。
5. The method according to claim 1, wherein an internal conductor layer provided between said substrates and a via-hole conductor for conducting between said internal conductor layers of said alumina-based low-temperature fired ceramic multilayer substrate are provided. A ceramic substrate comprising a conductor composition and co-firing integrally.
【請求項6】 前記アルミナ系低温焼成セラミック多層
基板は,アルミナとその添加物系材料で構成されている
ことを特徴とする請求項5記載のセラミック基板。
6. The ceramic substrate according to claim 5, wherein the alumina-based low-temperature-fired ceramic multilayer substrate is composed of alumina and an additive-based material.
【請求項7】 前記添加物系材料は,(a)酸化鉛,酸
化ケイ素より成るもの,(b),上記(a)に酸化亜
鉛,酸化チタン,酸化ストロンチウムの1種以上を添加
したもの,(c)酸化ケイ素,酸化ホウ素,酸化リチウ
ム,酸化カルシウムより成るものの上記(a)ないし
(c)のグループより選択された少なくとも1種の材料
で構成されていることを特徴とする請求項6に記載のセ
ラミック基板。
7. The additive-based material includes (a) a material composed of lead oxide and silicon oxide, (b) a material obtained by adding at least one of zinc oxide, titanium oxide and strontium oxide to (a), 7. The method according to claim 6, wherein (c) comprises silicon oxide, boron oxide, lithium oxide, and calcium oxide, but is made of at least one material selected from the above groups (a) to (c). The ceramic substrate as described.
JP22522791A 1991-08-08 1991-08-08 Conductor composition and ceramic substrate using the same Expired - Fee Related JP3098288B2 (en)

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JP3098288B2 true JP3098288B2 (en) 2000-10-16

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Publication number Priority date Publication date Assignee Title
JP2783751B2 (en) * 1993-12-21 1998-08-06 富士通株式会社 Method for manufacturing multilayer ceramic substrate
JP2570617B2 (en) * 1994-05-13 1997-01-08 日本電気株式会社 Via structure of multilayer wiring ceramic substrate and method of manufacturing the same
KR100604366B1 (en) * 1999-12-10 2006-07-25 고등기술연구원연구조합 A low temperature cofired ceramic on metal and a forming method of a grounding face
US6738251B2 (en) 2000-01-28 2004-05-18 Tdk Corporation Conductive pattern incorporated in a multilayered substrate, multilayered substrate incorporating a conductive pattern, and a method of fabricating a multilayered substrate
US7749592B2 (en) 2007-02-06 2010-07-06 Tdk Corpoation Multilayer ceramic substrate

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