JP3088421U - Optical semiconductor - Google Patents
Optical semiconductorInfo
- Publication number
- JP3088421U JP3088421U JP2002001146U JP2002001146U JP3088421U JP 3088421 U JP3088421 U JP 3088421U JP 2002001146 U JP2002001146 U JP 2002001146U JP 2002001146 U JP2002001146 U JP 2002001146U JP 3088421 U JP3088421 U JP 3088421U
- Authority
- JP
- Japan
- Prior art keywords
- optical semiconductor
- insulating substrate
- light
- electrode
- emitting element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Abstract
(57)【要約】 (修正有)
【課題】 膨張係数の異なる絶縁基板と透光性樹脂によ
る封止不良による水分の侵入を防止した光半導体を提供
する。
【解決手段】 絶縁基板1の表裏両面に透光性樹脂6を
封止することにより、絶縁基板1と透光性樹脂6の間の
界面剥離を防ぐことが可能になり、製品の信頼性は向上
する。
(57) [Summary] (with correction) [PROBLEMS] To provide an optical semiconductor in which infiltration of moisture due to poor sealing by an insulating substrate having a different expansion coefficient and a light-transmitting resin is prevented. SOLUTION: By sealing a light-transmitting resin 6 on both front and back surfaces of an insulating substrate 1, it is possible to prevent interface peeling between the insulating substrate 1 and the light-transmitting resin 6, and to improve the reliability of the product. improves.
Description
【0001】[0001]
【考案の属する技術分野】 本考案は、軽薄短小を追求する電子機器向けに提 供される小型、薄型の光半導体に関する。[Technical field to which the present invention pertains] The present invention relates to a small and thin optical semiconductor provided for electronic devices pursuing lightness, thinness and shortness.
【0002】[0002]
【従来の技術】電子小型機器、軽薄短小を追求する電子小型機器に提供される 光半導体の代表的な構造を図1に示す。この光半導体は、略直方体形状を成した 絶縁基板1の表面に鍍金法などにより形成された金属パターンの電極有している 。この電極は、絶縁基板1の下面から側面を通り上面まで導通し、該電極に対向 するように形成されている。発光素子4は該電極の上面電2にダイボンドにて実 装され、電極の上面電2a,3aと金線などの金属細線5によりワイヤーボンデ ィングにて接続され、透光性樹脂6にて発光素子4を覆う形で封止した構造をし ている。2. Description of the Related Art FIG. 1 shows a typical structure of an optical semiconductor provided in a small electronic device or a small electronic device pursuing lightness, thinness and shortness. This optical semiconductor has a metal pattern electrode formed by plating or the like on the surface of an insulating substrate 1 having a substantially rectangular parallelepiped shape. This electrode is formed so as to conduct from the lower surface of the insulating substrate 1 through the side surface to the upper surface, and to face the electrode. The light emitting element 4 is mounted on the upper surface electrode 2 of the electrode by die bonding, connected to the upper surface electrodes 2a and 3a of the electrode by a wire bonding through a thin metal wire 5 such as a gold wire, and emits light by a translucent resin 6. The device is sealed so as to cover the element 4.
【0003】[0003]
【考案が解決しようとする課題】 しかしながら、前記従来技術における構造 の光半導体には、品質面から見た場合次のような不具合が有った。 すなわち、前記従来の光半導体においては、絶縁基板1と透光性樹脂6の熱に 対する線膨張係数が大きく違うために、光半導体が置かれた温度が上昇したり下 降することにより絶縁基板1と透光性樹脂6の界面に極僅かな隙間が生じた。そ の結果、該隙間から水分が光半導体の内部に侵入し、光半導体を実装基板に搭載 した後リフロー工程を通過する時に蒸気爆発を誘発することが有った。また、高 温高湿などの信頼性試験における耐久性も弱かった。[Problems to be Solved by the Invention] However, the optical semiconductor having the structure according to the conventional technique has the following disadvantages in terms of quality. That is, in the conventional optical semiconductor, since the linear expansion coefficient of the insulating substrate 1 and the translucent resin 6 with respect to heat is significantly different, the temperature at which the optical semiconductor is placed rises or falls and the insulating substrate 1 A very small gap was formed at the interface between the transparent resin 1 and the light-transmitting resin 6. As a result, moisture may enter the optical semiconductor from the gap, and may induce a steam explosion when the optical semiconductor is mounted on a mounting substrate and passes through a reflow process. Also, durability in reliability tests such as high temperature and high humidity was low.
【0004】 本考案は、上記課題を解決しようとするものであり、必要とさ れる信頼性を具備した光半導体を提供することを目的とする。[0004] The present invention is intended to solve the above-mentioned problem, and has an object to provide an optical semiconductor having required reliability.
【0005】[0005]
【課題を解決するための手段】 本考案の光半導体は、前記課題を解決するた めに、次の技術的手段を採用している。本願考案の光半導体は、絶縁基板の表裏 両面を透光性樹脂で覆うことにより、信頼性の向上が得られる。Means for Solving the Problems The optical semiconductor of the present invention employs the following technical means to solve the above problems. The reliability of the optical semiconductor of the present invention can be improved by covering the front and back surfaces of the insulating substrate with a transparent resin.
【0006】[0006]
【実施例】 以下、本考案による光半導体の実施例を図面に基づいて説明する 。図2において、絶縁基板1は一層目の基板1aと二層目の基板21とで構成さ れており、一層目の基板1aには鍍金法などにより金属パターンから成る一対の 対向する電極2で形成している。また、二層目の基板21にも同様に鍍金法など により金属パターンから成る一対の対向する電極22が形成されている。一層目 の基板1aと二層目の基板21は電極2a,3bの電気的接続を維持しながら、 接着剤あるいはシートなどによる手段により接合される。この手段は、多層基板 などを製造する方法としては、一般的な手段である。電極は、一層目電極2b, 3bのスルーホール2a,3b電極により裏面電極2c,3cに電気的に接合さ れ、且つ、二層目の上面電極3eは側面電極3dにより裏面に電気的に接合され る。一層目の下面電極2cと二層目の基板2eを接着剤あるいはシートなどによ り電気的接合する際に電極3aと2aの電気的接続を保ち、且つ、裏面の二層基 板1bには、透明性樹脂を溜めるための凹部22を有する。発行素子4は、一層 目の基板1aの対向する電極の片方の上面電極2に実装され、発行素子4と対向 する電極の他方の上面2a,3aに金線などの金属細線5により接合される。機 械的破損などから保護するために発行素子と金属細線を透光性樹脂6で覆うとき に、一層目の基板11に開いている小さな穴より裏面の二層目の基板1bの凹部 22にも樹脂が流れ込ませ樹脂層6aと6bを形成する。 又、発光素子の接合方法はワイヤーボンディング方式やフェイスダウン方式が 可能で有る。Hereinafter, embodiments of the optical semiconductor according to the present invention will be described with reference to the drawings. In FIG. 2, an insulating substrate 1 includes a first-layer substrate 1a and a second-layer substrate 21. The first-layer substrate 1a includes a pair of opposing electrodes 2 formed of a metal pattern by plating or the like. Has formed. Similarly, a pair of opposing electrodes 22 made of a metal pattern are formed on the second-layer substrate 21 by plating or the like. The first-layer substrate 1a and the second-layer substrate 21 are joined by means of an adhesive or a sheet while maintaining the electrical connection between the electrodes 2a and 3b. This means is a general means for manufacturing a multilayer substrate or the like. The electrodes are electrically connected to the back electrodes 2c and 3c by the through holes 2a and 3b of the first electrodes 2b and 3b, and the upper electrode 3e of the second layer is electrically connected to the back surface by the side electrodes 3d. Is performed. When electrically connecting the lower electrode 2c of the first layer and the substrate 2e of the second layer with an adhesive or a sheet, the electrical connection between the electrodes 3a and 2a is maintained, and the two-layer substrate 1b on the back surface is And a recess 22 for storing the transparent resin. The issuing element 4 is mounted on one upper surface electrode 2 of the facing electrode of the first layer substrate 1a, and is joined to the other upper surface 2a, 3a of the electrode facing the issuing element 4 by a thin metal wire 5 such as a gold wire. . When the light-emitting element and the fine metal wire are covered with the translucent resin 6 to protect them from mechanical damage, etc., the small holes formed in the first substrate 11 are not covered with the recesses 22 of the second layer substrate 1b on the back surface. The resin also flows in to form the resin layers 6a and 6b. The bonding method of the light emitting element can be a wire bonding method or a face down method.
【0007】 図3に示す光半導体は、一層基板の上面電極23aは側面電極 23bに電気的接合にぶより下面電極23cに電気的接合される。更に、透明性 樹脂は絶縁回路基板1の側面電極を接合し、発行素子が実装されて電極面と反対 側に回り込んだ構造で形成されている。In the optical semiconductor shown in FIG. 3, the upper electrode 23a of the single-layer substrate is electrically connected to the lower electrode 23c by electrical connection to the side electrode 23b. Further, the transparent resin is formed to have a structure in which the side electrodes of the insulated circuit board 1 are joined, the emitting element is mounted, and wraps around the side opposite to the electrode surface.
【0008】[0008]
【考案の効果】 以上説明したように、請求項1と請求項2の記載の考案によ れば、絶縁基板の表裏両面に透光性樹脂を封止することにより、絶縁基板と透光 性樹脂の間の界面剥離を防ぐことが可能になり、製品の信頼性は向上する。[Effects of the Invention] As described above, according to the first and second aspects of the invention, the insulating substrate is sealed with the translucent resin on both the front and back surfaces of the insulating substrate. It is possible to prevent interfacial separation between the resins, and the reliability of the product is improved.
【図1】 光半導体の従来例を示した断面図である。FIG. 1 is a sectional view showing a conventional example of an optical semiconductor.
【図2】 本考案に係わる、光半導体の実施例を示した
断面図である。FIG. 2 is a cross-sectional view showing an embodiment of the optical semiconductor according to the present invention.
【図3】 本考案に係わる、光半導体の実施例を示した
断面図である。FIG. 3 is a sectional view showing an embodiment of the optical semiconductor according to the present invention.
1 絶縁基板 2 電極 3 電極 4 発光素子 5 金属細線 6 透光性樹脂 12 電極 23 電極 DESCRIPTION OF SYMBOLS 1 Insulating substrate 2 Electrode 3 Electrode 4 Light emitting element 5 Fine metal wire 6 Translucent resin 12 Electrode 23 Electrode
Claims (2)
し、該一対の電極パターンに発光素子を実装し、該一対
の電極パターンと金属細線にて接続され、該発光素子と
接合部を覆うように透光性樹脂にて封止した発光素子に
おいて、該絶縁基板の実装面の反対側にも透光性樹脂を
覆ったことを特徴とする光半導体。1. A pair of electrode patterns are formed on an insulating substrate, a light emitting element is mounted on the pair of electrode patterns, connected to the pair of electrode patterns by thin metal wires, and covers the light emitting element and a joint. An optical semiconductor characterized in that the light-emitting element sealed with a light-transmitting resin as described above also covers the light-transmitting resin on the side opposite to the mounting surface of the insulating substrate.
り、片面には発光素子を実装し、反対面層と接しない面
に貫通されている凹部を設け、その凹部を透光性樹脂に
て覆ったことを特徴とする請求項1に記載の光半導体。2. An insulating substrate having a multilayer structure, wherein a light emitting element is mounted on one side, and a penetrating recess is provided on a surface which is not in contact with an opposite surface layer. The optical semiconductor according to claim 1, wherein the optical semiconductor is covered with the optical semiconductor.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002001146U JP3088421U (en) | 2002-01-30 | 2002-01-30 | Optical semiconductor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002001146U JP3088421U (en) | 2002-01-30 | 2002-01-30 | Optical semiconductor |
Publications (1)
Publication Number | Publication Date |
---|---|
JP3088421U true JP3088421U (en) | 2002-09-13 |
Family
ID=43239726
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2002001146U Expired - Fee Related JP3088421U (en) | 2002-01-30 | 2002-01-30 | Optical semiconductor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP3088421U (en) |
-
2002
- 2002-01-30 JP JP2002001146U patent/JP3088421U/en not_active Expired - Fee Related
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LAPS | Cancellation because of no payment of annual fees |