JP3066952B2 - Lead frame material - Google Patents
Lead frame materialInfo
- Publication number
- JP3066952B2 JP3066952B2 JP9020613A JP2061397A JP3066952B2 JP 3066952 B2 JP3066952 B2 JP 3066952B2 JP 9020613 A JP9020613 A JP 9020613A JP 2061397 A JP2061397 A JP 2061397A JP 3066952 B2 JP3066952 B2 JP 3066952B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- lead frame
- copper
- frame material
- nickel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、半導体装置のリー
ドフレームの製造に好適に用いられるリードフレーム材
に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a lead frame material suitably used for manufacturing a lead frame of a semiconductor device.
【０００２】[0002]
【従来の技術】ＩＣ、ＬＳＩの高集積化に伴いピン数が
増加し、そのためリード部を微細化することが必要とさ
れている。リードフレーム材をエッチングしてリードフ
レームを製造する方法はリード部の微細化に好適な方法
であり、特開平３−１４８８５６号公報にはアルミニウ
ムからなるエッチングストップ層を厚さの異なる２層の
金属層によりサンドイッチ状に挟んだ三層構造のリード
フレーム材を用い、これをエッチングすることによりリ
ードフレームを製造する方法が記載されている。2. Description of the Related Art The number of pins has increased with the increase in the degree of integration of ICs and LSIs. A method of manufacturing a lead frame by etching a lead frame material is a method suitable for miniaturization of a lead portion. Japanese Unexamined Patent Publication (Kokai) No. 3-148856 discloses an etching stop layer made of aluminum having two layers of metal having different thicknesses. A method of manufacturing a lead frame by using a lead frame material having a three-layer structure sandwiched between layers in a sandwich shape and etching the lead frame material is described.
【０００３】この方法によれば、エッチングストップ層
を設けたことにより厚さの異なる２層の金属層を選択的
にエッチングすることができ、リードフレームの母材と
なる厚い金属層を必要な機械的強度が得られるような厚
さとし、ＩＣとの接続部となる薄い金属層を接続部に要
求される微細さに応じた厚さとすることにより、ＩＣと
の微細な接続部と十分な機械的強度を有するリードフレ
ームが製造できる。According to this method, two metal layers having different thicknesses can be selectively etched by providing the etching stop layer, and a thick metal layer serving as a base material of a lead frame is required. By providing a thin metal layer serving as a connecting portion with the IC with a thickness corresponding to the fineness required for the connecting portion, a fine connecting portion with the IC and sufficient mechanical strength can be obtained. A strong lead frame can be manufactured.
【０００４】しかしながら、この方法に用いられる三層
構造のリードフレーム材は、エッチングストップ層材料
が蒸着によって形成されたアルミニウムである。蒸着に
よるアルミニウム層の形成は、工程が煩雑で、リードフ
レーム材のコスト高につながるといった問題がある。However, the lead frame material having a three-layer structure used in this method is aluminum on which an etching stop layer material is formed by vapor deposition. The formation of an aluminum layer by vapor deposition has a problem that the process is complicated and leads to an increase in the cost of the lead frame material.
【０００５】また、この三層構造のリードフレーム材を
用いてリードフレームを製造する方法においては、リー
ドが形成された面の面上に絶縁保護膜であるポリイミド
フィルムをポリアミド酸系接着剤を用いて３５０℃以上
の温度で硬化させて接着するなど、リードフレーム材が
高温にさらされる工程が存在し、エッチングストップ層
にはこのような高温にも耐える耐熱性が要求される。電
気めっき等により容易に層形成しうるニッケル層など
は、３５０℃以上の高温にさらされると金属層の銅がニ
ッケル層に拡散し、エッチングストップ層としての役割
を果たすことができない。In a method of manufacturing a lead frame using a lead frame material having a three-layer structure, a polyimide film which is an insulating protective film is formed on a surface on which leads are formed by using a polyamic acid-based adhesive. For example, there is a process in which the lead frame material is exposed to a high temperature, such as curing at a temperature of 350 ° C. or more and bonding, and the etching stop layer is required to have heat resistance to withstand such a high temperature. When a nickel layer or the like which can be easily formed by electroplating or the like is exposed to a high temperature of 350 ° C. or more, copper of the metal layer diffuses into the nickel layer and cannot function as an etching stop layer.
【０００６】[0006]
【発明が解決しようとする課題】本発明の目的は、蒸着
などの煩雑な工程を必要とせず電気めっきにより容易に
形成できるとともに、耐熱性に優れたエッチングストッ
プ層を中間層として有する三層構造のリードフレーム材
を提供することにある。SUMMARY OF THE INVENTION An object of the present invention is to provide a three-layer structure which can be easily formed by electroplating without requiring a complicated process such as vapor deposition and has an etching stop layer having excellent heat resistance as an intermediate layer. And a lead frame material.
【０００７】[0007]
【課題を解決するための手段】本発明者らは、上記課題
を解決するために鋭意検討を重ねた結果、三層構造のリ
ードフレーム材のエッチングストップ層として特定の厚
みの特定の合金層を採用することにより、蒸着などの煩
雑な工程を必要とせず電気めっきにより容易にエッチン
グストップ層を形成できるとともに、優れた耐熱性を有
する三層構造のリードフレーム材が得られることを見出
し、この知見に基づいて本発明を完成するに至った。The present inventors have made intensive studies to solve the above-mentioned problems, and as a result, have found that a specific alloy layer having a specific thickness is used as an etching stop layer for a lead frame material having a three-layer structure. By adopting this method, it was found that an etching stop layer can be easily formed by electroplating without the need for complicated steps such as vapor deposition, and a lead frame material having a three-layer structure having excellent heat resistance was obtained. Based on the above, the present invention has been completed.
【０００８】すなわち、本発明は、厚さ３５〜３００μ
ｍの銅又は銅合金層と厚さ０．２〜３０μｍの銅層の間
に厚さ１．６〜１０μｍ、リン含有量が０．３〜１．０
重量％のニッケル−リン合金層を設けたことを特徴とす
るリードフレーム材を提供するものである。[0008] That is, the present invention provides a thickness of 35 to 300 μm.
1.6 to 10 μm in thickness and a phosphorus content of 0.3 to 1.0 m between a copper or copper alloy layer having a thickness of m and a copper layer having a thickness of 0.2 to 30 μm.
An object of the present invention is to provide a lead frame material provided with a nickel-phosphorus alloy layer of a weight percent.
【０００９】[0009]
【発明の実施の形態】本発明のリードフレーム材におい
て、厚さ３５〜３００μｍの銅又は銅合金層はリードフ
レームのアウターリード等を形成するための部材となる
もので、厚さが３５μｍ未満であるとアウターリードと
しての機械的強度が保持できなくなり、厚さが３００μ
ｍを超えると長時間のエッチングが必要となり、生産性
が悪くなる。好ましい厚さは５０〜２００μｍである。
銅合金としては、例えば、銅と、Ｓｎ、Ｎｉ、Ｚｎ、
Ｐ、Ｆｅ、Ｚｒ、Ｃｒ、Ｍｇ及びＳｉから選ばれる少な
くとも１種の金属との合金であって、銅合金中、銅以外
の上記金属の含有量が０．０１〜５重量％であるものが
好適である。また、銅又は銅合金層は、表面粗さＲａが
０．１〜２．０μｍであることが好ましく、さらに好ま
しくは０．２〜０．８μｍである。BEST MODE FOR CARRYING OUT THE INVENTION In the lead frame material of the present invention, a copper or copper alloy layer having a thickness of 35 to 300 μm is a member for forming an outer lead or the like of a lead frame. If it is, the mechanical strength of the outer lead cannot be maintained, and the thickness is 300μ.
If it exceeds m, etching for a long time is required, and productivity is deteriorated. The preferred thickness is 50-200 μm.
As the copper alloy, for example, copper, Sn, Ni, Zn,
An alloy with at least one metal selected from P, Fe, Zr, Cr, Mg, and Si, wherein a content of the metal other than copper in the copper alloy is 0.01 to 5% by weight. It is suitable. Further, the copper or copper alloy layer preferably has a surface roughness Ra of 0.1 to 2.0 μm, more preferably 0.2 to 0.8 μm.
【００１０】厚さ０．２〜３０μｍの銅層は微細なパタ
ーンを形成するための部材となるもので、厚さが０．２
μｍ未満であったり３０μｍを超えたりすると微細なパ
ターンが形成できない。好ましい厚さは０．５〜１０μ
ｍである。The copper layer having a thickness of 0.2 to 30 μm serves as a member for forming a fine pattern.
If it is less than μm or more than 30 μm, a fine pattern cannot be formed. Preferred thickness is 0.5-10μ
m.
【００１１】厚さ１．６〜１０μｍ、リン含有量が０．
３〜１．０重量％のニッケル−リン合金層は銅又は銅合
金用のエッチング液にエッチングされない金属層であ
り、これを挟む金属層の一方に対するエッチングによっ
て他方がエッチングされることを阻む役割を果たす。ニ
ッケル−リン合金層は電気めっきにより容易に形成でき
るため、従来、蒸着により形成されていたアルミニウム
層と比べ、煩雑な工程なしに低コストのリードフレーム
材を得ることができるという利点がある。また、ニッケ
ル−リン合金はリンを含有していることにより高温にさ
らされても隣接する層の銅がニッケル−リン合金層に拡
散することがなく、耐熱性に優れている。ニッケル−リ
ン合金層中のリンの含有量は好ましくは０．３〜１．０
重量％、さらに好ましくは０．５〜０．８重量％であ
る。リンの含有量が０．３重量％未満では耐熱性が低下
し、銅のニッケル層への拡散が起こり、エッチングスト
ップ層としての役割を果たせなくなる。また、１．０重
量％を超えるとニッケル−リン電析効率が低下し、生産
性が低下する。The thickness is 1.6 to 10 μm and the phosphorus content is 0.1 to 10 μm.
The nickel-phosphorus alloy layer of 3 to 1.0% by weight is a metal layer which is not etched by an etching solution for copper or copper alloy, and has a role of preventing one of the metal layers sandwiching it from being etched by the other. Fulfill. Since the nickel-phosphorus alloy layer can be easily formed by electroplating, there is an advantage that a low-cost lead frame material can be obtained without complicated steps as compared with an aluminum layer conventionally formed by vapor deposition. Further, since the nickel-phosphorus alloy contains phosphorus, even if it is exposed to a high temperature, copper in an adjacent layer does not diffuse into the nickel-phosphorus alloy layer, and is excellent in heat resistance. The content of phosphorus in the nickel-phosphorus alloy layer is preferably 0.3 to 1.0.
%, More preferably 0.5 to 0.8% by weight. If the phosphorus content is less than 0.3% by weight, the heat resistance decreases, copper diffuses into the nickel layer, and cannot serve as an etching stop layer. On the other hand, when the content exceeds 1.0% by weight, the nickel-phosphorus electrodeposition efficiency decreases, and the productivity decreases.
【００１２】ニッケル−リン合金層の厚さが０．０４μ
ｍ未満であると、エッチングストップ層としての機能、
すなわち、一方の金属層をエッチングする際に、他方の
金属層を保護する機能が十分に確保できなくなる。ま
た、７０μｍを超えると、最終的にエッチングストップ
層を除去する際に長時間を要し、リードフレーム作製時
の生産性が低下する。好ましい厚さは１．６〜１０μｍ
であり、さらに好ましくは２．０〜５．０μｍである。The thickness of the nickel-phosphorus alloy layer is 0.04 μm.
m, the function as an etching stop layer,
That is, when one of the metal layers is etched, the function of protecting the other metal layer cannot be sufficiently secured. On the other hand, when the thickness exceeds 70 μm, it takes a long time to finally remove the etching stop layer, and the productivity in manufacturing a lead frame is reduced. Preferred thickness is 1.6 to 10 μm
And more preferably 2.0 to 5.0 μm.
【００１３】また、防錆性を確保する点から、リードフ
レーム材の表面にはクロメート処理や亜鉛化合物を含む
クロメート処理が施されていることが好ましい。From the viewpoint of ensuring rust prevention, the surface of the lead frame material is preferably subjected to a chromate treatment or a chromate treatment containing a zinc compound.
【００１４】本発明のリードフレーム材は、厚さ３５〜
３００μｍの銅又は銅合金層の表面にニッケル−リンめ
っきにより厚さ１．６〜１０μｍ、リン含有量が０．３
〜１．０重量％のニッケル−リン合金層を形成し、更に
ニッケル−リン合金層の表面に銅めっきにより銅層を形
成することにより製造することができる。必要に応じ、
銅層の表面にクロメート層を形成する。ニッケル−リン
めっきに用いられる好ましいめっき液組成及びめっき条
件を下記に記載する。 （１）めっき浴組成 硫酸ニッケル ２００〜３００ｇ／ｌ ホウ酸 １０〜１００ｇ／ｌ 亜リン酸 ０．２〜２０ｇ／ｌ ｏ−スルホ安息香酸イミドナトリウム １〜５０ｇ／ｌ 硫酸マグネシウム １０〜２００ｇ／ｌ （２）電解条件 ｐＨ：１．６〜３．０、電流密度：１〜１０Ａ／ｄ
ｍ2、液温：２０〜７０℃、 本発明のリードフレーム材を用いて製造できる好ましい
半導体装置としては、ＴＢＧＡ（ｔａｐｅ ｂａｌｌ
ｇｒｉｄ ａｒｒａｙ）、ＣＳＰ（ｃｈｉｐｓｉｚｅ
ｐａｃｋａｇｅ）などが挙げられる。The lead frame material of the present invention has a thickness of 35 to
Nickel-phosphorus plating on the surface of a 300 μm copper or copper alloy layer to a thickness of 1.6 to 10 μm and a phosphorus content of 0.3
It can be manufactured by forming a nickel-phosphorus alloy layer of about 1.0% by weight and further forming a copper layer by copper plating on the surface of the nickel-phosphorus alloy layer. As needed,
A chromate layer is formed on the surface of the copper layer. Preferred plating solution compositions and plating conditions used for nickel-phosphorus plating are described below. (1) Plating bath composition Nickel sulfate 200 to 300 g / l Boric acid 10 to 100 g / l Phosphorous acid 0.2 to 20 g / l Sodium imide sulfobenzoate 1 to 50 g / l Magnesium sulfate 10 to 200 g / l ( 2) Electrolysis conditions pH: 1.6 to 3.0, current density: 1 to 10 A / d
m 2 , liquid temperature: 20-70 ° C. As a preferable semiconductor device that can be manufactured using the lead frame material of the present invention, TBGA (tape ball)
grid array), CSP (chipsize)
package) and the like.
【００１５】[0015]
【実施例】以下、本発明を実施例及び比較例によって更
に具体的に説明するが、本発明はこれらの実施例に限定
されるものではない。EXAMPLES Hereinafter, the present invention will be described more specifically with reference to examples and comparative examples, but the present invention is not limited to these examples.
【００１６】実施例１ 厚さ１５０μｍの銅合金箔（三菱伸銅（株）製、銅−ニ
ッケル−スズ系合金、商品名：ＴＡＭＡＣ１５、表面粗
さＲａ：０．２μｍ）を用意し、その非めっき面にあら
かじめプラスチック製のめっき金属析出防止被膜を施し
た。Example 1 A copper alloy foil having a thickness of 150 μm (copper-nickel-tin alloy, manufactured by Mitsubishi Shindoh Co., Ltd., trade name: TAMAC15, surface roughness Ra: 0.2 μm) was prepared. A plating metal deposition prevention coating made of plastic was previously applied to the plating surface.
【００１７】これを用いて下記の製造工程（１〜５）を
順次行い、銅合金層の上に、ニッケル−リン合金層（厚
さ２μｍ、リン含有量０．８重量％、表面粗さＲａ：
０．２μｍ）及び銅層（厚さ２μｍ、表面粗さＲａ：
０．２μｍ）を形成し、三層構造のリードフレーム材を
製造した。なお、１〜５の各工程の終了後水洗を行っ
た。 製造工程 １．脱脂処理 （１）脱脂液 オルトケイ酸ナトリウム ３０ｇ／ｌ 炭酸ナトリウム ２０ｇ／ｌ 水酸化ナトリウム ２０ｇ／ｌ （２）電解脱脂条件 電流密度：５Ａ／ｄｍ2、処理時間：３０秒、液温：４
０℃、陰極：銅合金箔、陽極：酸化イリジウム ２．酸洗処理 （１）洗浄液 硫酸：２５ｇ／ｌ （２）洗浄条件 処理時間：３０秒、液温：２０℃ ３．ニッケル−リン合金めっき層の形成 （１）めっき液 硫酸ニッケル ３００ｇ／ｌ ホウ酸 ４０ｇ／ｌ 亜リン酸 ４ｇ／ｌ ｏ−スルホ安息香酸イミドナトリウム １０ｇ／ｌ 硫酸マグネシウム ８０ｇ／ｌ （２）電解条件 電流密度：１．１Ａ／ｄｍ2、電解時間：１０分、液
温：３５℃、ｐＨ：２．５、陽極：酸化イリジウム ４．銅めっき層の形成 （１）めっき液 硫酸銅 ２８０ｇ／ｌ 硫酸 ７０ｇ／ｌ 添加剤（ゼラチン） ３ｐｐｍ 添加剤（Ｃｌ-） １０ｐｐｍ （２）電解条件 電流密度：３．５Ａ／ｄｍ2、電解時間：４分、液温：
３５℃、陽極：酸化イリジウム ５．防錆層の形成 （１）処理液 重クロム酸ナトリウム ３．５ｇ／ｌ （２）処理条件 浸漬処理時間：２５秒、液温：２０℃、ｐＨ：４．７ ６．乾燥 乾燥条件 温度：１００℃、時間：５分 上記工程により得られた三層構造のリードフレーム材を
使用して、Ｎ2ガス雰囲気中で加熱処理（２００℃、３
００℃、４００℃、５００℃）を３０分間施し、下記の
高温熱拡散試験によりリードフレーム材の耐熱性を評価
した。Using this, the following manufacturing steps (1 to 5) are sequentially performed, and a nickel-phosphorus alloy layer (thickness 2 μm, phosphorus content 0.8% by weight, surface roughness Ra) is formed on the copper alloy layer. :
0.2 μm) and a copper layer (thickness 2 μm, surface roughness Ra:
0.2 μm) to produce a three-layered lead frame material. After the completion of each of the steps 1 to 5, washing was performed. Manufacturing process Degreasing treatment (1) Degreasing liquid Sodium orthosilicate 30 g / l Sodium carbonate 20 g / l Sodium hydroxide 20 g / l (2) Electrolytic degreasing conditions Current density: 5 A / dm 2 , treatment time: 30 seconds, liquid temperature: 4
1. 0 ° C., cathode: copper alloy foil, anode: iridium oxide 2. Pickling treatment (1) Cleaning solution sulfuric acid: 25 g / l (2) Cleaning conditions Treatment time: 30 seconds, liquid temperature: 20 ° C Formation of nickel-phosphorus alloy plating layer (1) Plating solution Nickel sulfate 300 g / l Boric acid 40 g / l Phosphorous acid 4 g / l O-sulfobenzoimide sodium 10 g / l Magnesium sulfate 80 g / l (2) Electrolytic conditions Current 3. Density: 1.1 A / dm 2 , electrolysis time: 10 minutes, liquid temperature: 35 ° C., pH: 2.5, anode: iridium oxide Formation of copper plating layer (1) Plating solution Copper sulfate 280 g / l Sulfuric acid 70 g / l Additive (gelatin) 3 ppm Additive (Cl − ) 10 ppm (2) Electrolysis conditions Current density: 3.5 A / dm 2 , electrolysis time: 4 minutes, liquid temperature:
4. 35 ° C., anode: iridium oxide Formation of antirust layer (1) Treatment liquid 3.5 g / l sodium dichromate (2) Treatment conditions Immersion treatment time: 25 seconds, liquid temperature: 20 ° C, pH: 4.7 Drying Drying conditions Temperature: 100 ° C., time: 5 minutes by using a lead frame material resulting three-layer structure in the above step, a heat treatment (200 ° C. in an N 2 gas atmosphere, 3
(00 ° C., 400 ° C., 500 ° C.) for 30 minutes, and the heat resistance of the lead frame material was evaluated by the following high-temperature heat diffusion test.
【００１８】高温熱拡散試験 それぞれの温度で加熱処理した試験片をＳＥＭ（走査型
電子顕微鏡）及びオージェ電子分光分析装置を用いリー
ドフレームの断面（ニッケル−リン合金層と薄い銅層の
接合部）の加熱温度による金属相互の熱拡散合金化の度
合いを分析し、熱拡散率（％）として求め、その数値を
表１に示した。熱拡散率（％）が小さい程、金属層相互
の合金化が進行していないことを意味しており、リード
フレーム材は耐熱性に優れ、選択エッチング性に優れた
ものとなる。High Temperature Thermal Diffusion Test A cross section of a lead frame (joint between nickel-phosphorus alloy layer and thin copper layer) using SEM (scanning electron microscope) and Auger electron spectroscopy for test specimens heat-treated at each temperature. The degree of heat diffusion alloying between metals depending on the heating temperature was analyzed and determined as a thermal diffusivity (%). The numerical values are shown in Table 1. The smaller the thermal diffusivity (%), the less alloying between the metal layers has progressed, and the lead frame material has excellent heat resistance and excellent selectivity.
【００１９】比較例１ 実施例１と同様の銅合金箔を使用し、上記工程３を下記
のニッケルめっき層の形成工程３′に変更して、ニッケ
ル−リン合金層をニッケル層（厚さ２μｍ、表面粗さＲ
ａ０．２μｍ）に変えた以外は実施例１と同様にして、
リードフレーム材を作製し、実施例１と同様に熱拡散試
験を行いその結果を表１に示した。 ３′．ニッケルめっき層の形成 （１）めっき液 硫酸ニッケル ２８０ｇ／ｌ ホウ酸 ４０ｇ／ｌ ｏ−スルホ安息香酸イミドナトリウム ５ｇ／ｌ （２）電解条件 電流密度：１．０Ａ／ｄｍ2、電解時間：１０分、液
温：３５℃、ｐＨ：２．５、陽極：酸化イリジウムCOMPARATIVE EXAMPLE 1 Using the same copper alloy foil as in Example 1, the above-mentioned step 3 was changed to the following nickel plating layer forming step 3 ', and the nickel-phosphorus alloy layer was replaced with a nickel layer (2 μm thick). , Surface roughness R
a 0.2 μm), except that it was changed to
A lead frame material was prepared and subjected to a thermal diffusion test in the same manner as in Example 1, and the results are shown in Table 1. 3 '. Formation of nickel plating layer (1) Plating solution Nickel sulfate 280 g / l Boric acid 40 g / l o-Sulfobenzoimide sodium 5 g / l (2) Electrolysis conditions Current density: 1.0 A / dm 2 , electrolysis time: 10 minutes , Liquid temperature: 35 ° C, pH: 2.5, anode: iridium oxide
【００２０】[0020]
【表１】 表１の結果より、実施例１のリードフレーム材は、耐熱
性に優れていることがわかる。[Table 1] The results in Table 1 show that the lead frame material of Example 1 has excellent heat resistance.
【００２１】[0021]
【発明の効果】本発明のリードフレーム材は、ニッケル
−リン合金からなるエッチングストップ層を中間層とし
て有する三層構造を有しているため、微細なリード部の
形成に適しているのみならず、耐熱性にも優れたもので
ある。また、本発明のリードフレーム材は、エッチング
ストップ層が電気めっきにより形成できるニッケル−リ
ン合金層であることから、蒸着などの煩雑な工程を必要
とせず容易に製造することができ、生産性にも優れたも
のである。Since the lead frame material of the present invention has a three-layer structure having an etching stop layer made of a nickel-phosphorus alloy as an intermediate layer, it is not only suitable for forming fine lead portions. It is also excellent in heat resistance. In addition, since the etching stop layer is a nickel-phosphorus alloy layer that can be formed by electroplating, the lead frame material of the present invention can be easily manufactured without a complicated process such as vapor deposition, and can improve productivity. Is also excellent.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 阿曽 和義 茨城県下館市下江連1226番地 日本電解 株式会社下館工場内 (56)参考文献 特開 昭61−80844（ＪＰ，Ａ) 特開 平５−308115（ＪＰ，Ａ) (58)調査した分野(Int.Cl.7，ＤＢ名) H01L 23/50 ────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Kazuyoshi Aso 1226 Shimoedashiri, Shimodate City, Ibaraki Pref. Japan Electrolysis Co., Ltd. Shimodate Plant (56) References 308115 (JP, A) (58) Field surveyed (Int. Cl. 7 , DB name) H01L 23/50
Claims (1)
厚さ０．２〜３０μｍの銅層の間に厚さ１．６〜１０μ
ｍ、リン含有量が０．３〜１．０重量％のニッケル−リ
ン合金層を設けたことを特徴とするリードフレーム材。1. A thickness of 1.6-10 μm between a copper or copper alloy layer having a thickness of 35-300 μm and a copper layer having a thickness of 0.2-30 μm.
m. A lead frame material provided with a nickel-phosphorus alloy layer having a phosphorus content of 0.3 to 1.0% by weight.
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9020613A JP3066952B2 (en) | 1997-02-03 | 1997-02-03 | Lead frame material |
| KR1019997003963A KR100322975B1 (en) | 1997-02-03 | 1998-01-21 | Lead frame material |
| US09/341,950 US6117566A (en) | 1997-02-03 | 1998-01-21 | Lead frame material |
| PCT/JP1998/000210 WO1998034278A1 (en) | 1997-02-03 | 1998-01-21 | Lead frame material |
| TW087101182A TW391042B (en) | 1997-02-03 | 1998-02-02 | Lead frame material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9020613A JP3066952B2 (en) | 1997-02-03 | 1997-02-03 | Lead frame material |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000064728A Division JP2000232196A (en) | 2000-03-09 | 2000-03-09 | Lead frame |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH10223827A JPH10223827A (en) | 1998-08-21 |
| JP3066952B2 true JP3066952B2 (en) | 2000-07-17 |
Family
ID=12032117
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9020613A Expired - Fee Related JP3066952B2 (en) | 1997-02-03 | 1997-02-03 | Lead frame material |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3066952B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW446627B (en) * | 1998-09-30 | 2001-07-21 | Toyo Kohan Co Ltd | A clad sheet for lead frame, a lead frame using thereof and a manufacturing method thereof |
| JP2013041950A (en) * | 2011-08-12 | 2013-02-28 | Sharp Corp | Light emitting device |
-
1997
- 1997-02-03 JP JP9020613A patent/JP3066952B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH10223827A (en) | 1998-08-21 |
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