JP3063066B2 - Surface mount electronic components - Google Patents
Surface mount electronic componentsInfo
- Publication number
- JP3063066B2 JP3063066B2 JP6303113A JP30311394A JP3063066B2 JP 3063066 B2 JP3063066 B2 JP 3063066B2 JP 6303113 A JP6303113 A JP 6303113A JP 30311394 A JP30311394 A JP 30311394A JP 3063066 B2 JP3063066 B2 JP 3063066B2
- Authority
- JP
- Japan
- Prior art keywords
- bonding material
- substrate
- pad portion
- electrode
- mounting pad
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000758 substrate Substances 0.000 claims description 58
- 239000000463 material Substances 0.000 claims description 57
- 239000011248 coating agent Substances 0.000 claims description 13
- 238000000576 coating method Methods 0.000 claims description 13
- 238000000605 extraction Methods 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 238000009795 derivation Methods 0.000 claims 1
- 239000004744 fabric Substances 0.000 claims 1
- 239000000919 ceramic Substances 0.000 description 24
- 239000010453 quartz Substances 0.000 description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 13
- 239000013078 crystal Substances 0.000 description 8
- 230000005284 excitation Effects 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 238000003466 welding Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000004308 accommodation Effects 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229920002050 silicone resin Polymers 0.000 description 3
- 238000005245 sintering Methods 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000005304 joining Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 230000033116 oxidation-reduction process Effects 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- 229910018605 Ni—Zn Inorganic materials 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- MOFOBJHOKRNACT-UHFFFAOYSA-N nickel silver Chemical compound [Ni].[Ag] MOFOBJHOKRNACT-UHFFFAOYSA-N 0.000 description 1
- 239000010956 nickel silver Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 238000010897 surface acoustic wave method Methods 0.000 description 1
Landscapes
- Parts Printed On Printed Circuit Boards (AREA)
- Piezo-Electric Transducers For Audible Bands (AREA)
- Structures For Mounting Electric Components On Printed Circuit Boards (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Description
【0001】[0001]
【産業上の利用分野】本発明は、水晶振動子や水晶フィ
ルタ等の表面実装型電子部品に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a surface mount type electronic component such as a quartz oscillator or a quartz filter.
【0002】[0002]
【従来の技術】従来の実施例として、セラミックケース
を用いた圧電振動子を例にして説明する。図5は従来の
実施例を示す分解斜視図である。2. Description of the Related Art As a conventional embodiment, a piezoelectric vibrator using a ceramic case will be described as an example. FIG. 5 is an exploded perspective view showing a conventional example.
【0003】セラミック基板1Aはアルミナからなり、
薄板状に加工され、かつその側面に外部端子を構成する
4つの切り欠き1a,1b,1c,1dが設けられてい
る。このセラミック基板1A上には、前記4つの切り欠
きから導電パッドを構成するサポート搭載部13B(一
部のみ図示)にかけて、図示しない引出電極がメタライ
ズ処理されている。前記セラミック基板1Aの上部にさ
らに、切り抜き15Bが設けられたセラミック基板1B
が積層されている。The ceramic substrate 1A is made of alumina,
Four cutouts 1a, 1b, 1c, 1d which are processed into a thin plate and form external terminals are provided on the side surfaces thereof. On the ceramic substrate 1A, extraction electrodes (not shown) are metallized from the four cutouts to the support mounting portions 13B (only some of which are shown) constituting conductive pads. Ceramic substrate 1B further provided with cutout 15B above ceramic substrate 1A
Are laminated.
【0004】そして、これらのセラミック基板1A,1
Bを焼結することにより、前記切り抜き15Bによる収
容スペースが形成される。そしてサポート21,22,
23,24は、例えば洋白やCu−Ni−Zn系合金、
SUS等の金属板からなり、それぞれ基板結合部21
1,221,231,241と素子搭載部212,22
2,232,242と、これらを結合する立ち上がり部
を有する平板形状となっている。これらのサポートの素
子搭載部212,222,232,242を前記切り抜
き15Bによって形成される基板長手方向の中心側に向
かって、かつ、基板結合部211,221,231,2
41を前記基板のサポート搭載部13B(一部のみ図
示)に搭載し、例えばレーザー溶接等の手法により電気
的機械的な接合を施す。[0004] These ceramic substrates 1A, 1
By sintering B, an accommodation space by the cutout 15B is formed. And support 21, 22,
23 and 24 are, for example, nickel silver or Cu-Ni-Zn based alloy;
It is made of a metal plate such as SUS.
1, 211, 231, 241 and element mounting portions 212, 22
2, 232, 242 and a rising portion for connecting them. The element mounting portions 212, 222, 232, and 242 of these supports are moved toward the center in the longitudinal direction of the substrate formed by the cutout 15B, and the substrate coupling portions 211, 221, 231, and 2 are formed.
41 is mounted on a support mounting portion 13B (only a part is shown) of the substrate, and is subjected to electromechanical bonding by a method such as laser welding.
【0005】このようにしてサポート21,22,2
3,24は、基板長手方向の両端部の各々のサポート搭
載部でのみ固定されるとともに前記サポート搭載部から
中心側に向かって若干斜め上方に延伸している。In this way, the supports 21, 22, 2
Reference numerals 3 and 24 are fixed only at the support mounting portions at both ends in the longitudinal direction of the substrate, and extend slightly obliquely upward from the support mounting portions toward the center.
【0006】そして表裏面に励振電極31(裏面につい
ては図示せず)が形成された矩形状の水晶板3を前記サ
ポートの素子搭載部212,222,232,242に
搭載し、本発明の第1の実施例では、サポート21,2
4のいずれか(もしくは両方)と励振電極31とが、サ
ポート22,23のいずれか(もしくは両方)と裏面側
の励振電極とが、エポキシ系あるいはポリイミド系の導
電性接合材により少なくとも電気的に接続が施されてい
る。A rectangular quartz plate 3 having excitation electrodes 31 (rear surface not shown) formed on the front and rear surfaces is mounted on the support device mounting portions 212, 222, 232, and 242 of the support. In one embodiment, the supports 21 and
4 (or both) and the excitation electrode 31, and either (or both) of the supports 22 and 23 and the excitation electrode on the back side are at least electrically connected by an epoxy-based or polyimide-based conductive bonding material. Connections are being made.
【0007】そして前記サポート、並びに水晶板が基板
が収容されたセラミック基板に蓋4をかぶせ、例えばシ
ーム溶接等の手法により気密封止していた。The support and the quartz plate are covered with a lid 4 on a ceramic substrate in which the substrate is accommodated, and hermetically sealed by, for example, seam welding.
【0008】[0008]
【発明が解決しようとする課題】近年、表面実装型電子
部品は、軽量化・薄型化・小型化が計られており、水晶
振動子や水晶フィルタ等の圧電振動子の分野でも例外で
はないのが現状である。しかし、耐熱性・温度特性・耐
衝撃性等を考慮すると、基板と圧電板との間に導電性接
合材を介してサポートを取り付ける必要があった。内蔵
する圧電板の形状が小さくなっても、サポートによる高
さ、あるいはサポート幅等により、表面実装型電子部品
としての圧電振動子の軽量化・薄型化・小型化の阻害要
因となっていた。また、サポート形成工程経るうえで工
程の複雑化・装置の多様化・製造上のコストアップが免
れ得なかった。In recent years, surface mount electronic components have been reduced in weight, thickness and size, and are no exception in the field of piezoelectric vibrators such as quartz oscillators and quartz filters. Is the current situation. However, in consideration of heat resistance, temperature characteristics, impact resistance, and the like, it was necessary to attach a support between the substrate and the piezoelectric plate via a conductive bonding material. Even if the shape of the built-in piezoelectric plate is reduced, the height, the support width, and the like of the support have been an obstacle to reducing the weight, thickness, and size of the piezoelectric vibrator as a surface-mounted electronic component. In addition, the complicated process, the diversification of equipment, and the increase in manufacturing cost cannot be avoided after the support forming process.
【0009】そこで本発明は、小型でより製造上にも簡
素化がはかれる信頼性の高い表面実装型電子部品を提供
することを目的とする。SUMMARY OF THE INVENTION It is an object of the present invention to provide a highly reliable surface mount electronic component which is small in size and simple in manufacturing.
【0010】[0010]
【課題を解決するための手段】そこで、本発明の表面実
装型電子部品は、外部回路と導通する引出電極が形成さ
れた基板が有り、前記引出電極に素子搭載パッド部を設
け、また、主電極とリード電極が設けられた素子が有
り、前記素子のリード電極一端に接合材パッド部を設
け、前記素子搭載パッド部と前記接合材パッド部とが少
なくともシリコン系の導電性接合材を介して電気的機械
的に接合されて、前記基板上に前記素子が搭載されてお
り、前記素子を搭載した基板に蓋体を封止してなる表面
実装型電子部品において、前記導電性接合材にPdを混
入させ、かつ当該Pdの導電性接合材に対する歩合とし
て2〜8%混入させている。In view of the above, the surface mount electronic component of the present invention has a substrate on which an extraction electrode is formed which is electrically connected to an external circuit. The extraction electrode is provided with an element mounting pad portion. There is an element provided with an electrode and a lead electrode, a bonding material pad is provided at one end of the lead electrode of the element, and the element mounting pad and the bonding material pad are at least via a silicon-based conductive bonding material. In a surface-mounted electronic component in which the element is electrically and mechanically joined and the element is mounted on the substrate, and a lid is sealed on the substrate on which the element is mounted, Pd is added to the conductive bonding material. And 2 to 8% as a percentage of the Pd with respect to the conductive bonding material.
【0011】また、前記導電性接合材は、第1の塗布部
と第2の塗布部を具備し、前記第1の塗布部は、前記基
板の素子搭載パッド部と素子のリード電極の間に介在し
て形成され、前記第2の塗布部は、前記第1の塗布部と
当該第2の塗布部の間に前記素子が介在するように、前
記素子の上面から当該素子の側端面を経由して前記第1
の塗布部へと形成されている。Further, the conductive bonding material includes a first coating portion and a second coating portion, and the first coating portion is provided between an element mounting pad portion of the substrate and a lead electrode of the element. The second application section is formed with the element interposed from the upper surface of the element via a side end face of the element so that the element is interposed between the first application section and the second application section. And the first
Is formed on the coating portion.
【0012】また、少なくとも前記素子のリード電極の
接合材パッド部と前記基板の素子搭載パッド部の表面を
Agとした。The surface of at least the bonding material pad of the lead electrode of the device and the surface of the device mounting pad of the substrate are made of Ag.
【0013】また、素子のリード電極の接合材パッド部
分、あるいは前記基板の素子搭載パッド部の少なくとも
一方には、素子、あるいは基板が露出する部分が形成さ
れており、前記素子露出部を含む素子のリード電極の接
合材パッド部分で、あるいは前記基板露出部を含む素子
搭載パッド部分で、当該接合材パッド部分と素子搭載パ
ッド部分とがお互いに接合されてなる。An element or a part where the substrate is exposed is formed on at least one of the bonding material pad part of the lead electrode of the element or the element mounting pad part of the substrate, and the element including the element exposed part is formed. The bonding material pad portion and the element mounting pad portion are bonded to each other at the bonding material pad portion of the lead electrode or at the element mounting pad portion including the substrate exposed portion.
【0014】[0014]
【作用】特許請求項1により、導電性接合材中のO2を
取り去るため導電性(金属片もしくは金属球)を劣化
(酸化による導電率の低下)させない。According to the first aspect of the present invention, since the O 2 in the conductive bonding material is removed, the conductivity (metal piece or metal sphere) is not deteriorated (the conductivity is reduced by oxidation).
【0016】特許請求項2により、一度塗布した導電性
接合材(第1の塗布部)の上に素子を搭載し、その後も
う一度導電性接合材(第2の塗布部)を塗布して硬化接
合することができるため、搭載精度の向上と接合強度の
向上がはかれる。According to the second aspect of the present invention, the element is mounted on the conductive bonding material (first coated portion) once applied, and then the conductive bonding material (second coated portion) is applied again and cured and bonded. Therefore, the mounting accuracy and the bonding strength can be improved.
【0017】特許請求項3により、AgはAl等に比べ
て比較的酸化が起こりにくいため、同電極上に酸化膜が
できにくく、導電性接合材との導電性の低下をまねきに
くい。そして、導電性接合材とのなじみがよいため、基
板と素子のより強固な電気的機械的接合が可能となる。According to the third aspect of the present invention, Ag is relatively hard to oxidize as compared with Al or the like, so that an oxide film is hardly formed on the same electrode, and it is hard to cause a decrease in conductivity with the conductive bonding material. Further, since the substrate and the element are well compatible with each other, stronger electric and mechanical bonding between the substrate and the element can be achieved.
【0018】特許請求項4,5により、素子が露出した
部分と導電性接合材、あるいは基板が露出した部分と導
電性接合材とのぬれ性によるなじみがより強く、基板と
素子とのさらにより一層強固な機械的な接合が可能とな
る。According to Claims 4 and 5, the wettability between the exposed portion of the element and the conductive bonding material or the exposed portion of the substrate and the conductive bonding material is stronger, and the connection between the substrate and the element is further improved. Stronger mechanical joining becomes possible.
【0019】[0019]
【実施例】次に、本発明の第1の実施例について、セラ
ミックケースを用いた表面実装型の圧電振動子を例にし
て説明する。図1は本発明の第1の実施例を示す分解斜
視図であり、図2は図1の組み立てた状態の断面図であ
る。Next, a first embodiment of the present invention will be described with reference to a surface mount type piezoelectric vibrator using a ceramic case as an example. FIG. 1 is an exploded perspective view showing a first embodiment of the present invention, and FIG. 2 is a sectional view of an assembled state of FIG.
【0020】セラミック基板1Aはアルミナからなり、
薄板状に加工され、かつその側面に外部端子を構成する
4つの切り欠き1a,1b,1c,1dが設けられてい
る。このセラミック基板1A上には、前記4つの切り欠
きから導電パッドを構成する素子搭載パッド部11C,
12C,13C,14Cにかけて、図示しない引出電極
(Ag等)がメタライズ処理されている。前記セラミッ
ク基板1Aの上部にさらに、切り抜き15Cが設けられ
たセラミック基板1Cが積層されている。The ceramic substrate 1A is made of alumina,
Four cutouts 1a, 1b, 1c, 1d which are processed into a thin plate and form external terminals are provided on the side surfaces thereof. On the ceramic substrate 1A, an element mounting pad portion 11C, which forms a conductive pad from the four cutouts,
The extraction electrodes (Ag and the like) (not shown) are subjected to the metallizing process in 12C, 13C, and 14C. A ceramic substrate 1C provided with a cutout 15C is further laminated on the ceramic substrate 1A.
【0021】そしてこれらのセラミック基板1A,1C
を焼結することにより、前記切り抜き15Cによる収容
スペースが形成される。そして、前記素子搭載パッド部
11C,12C,13C,14Cの基板露出部131C
(一部のみ図示)上に、導電性接合材を塗布することに
より前記導電性接合材の素子搭載台51を構成する。These ceramic substrates 1A, 1C
By sintering, an accommodation space by the cutout 15C is formed. Then, the substrate exposed portions 131C of the element mounting pad portions 11C, 12C, 13C, and 14C are formed.
An element mounting base 51 of the conductive bonding material is formed by applying a conductive bonding material on (only a part is illustrated).
【0022】この素子搭載台51を構成する導電性接合
材は、シリコン樹脂の接着剤からなり、導体部として例
えば薄板状のAgや球状のAgを含み、かつ酸化還元剤
としてのPdを2〜8%含んだものである。The conductive bonding material constituting the element mounting table 51 is made of an adhesive of silicon resin, and includes, for example, a thin Ag or a spherical Ag as a conductor, and Pd as an oxidation-reduction agent of 2 to 2%. It contains 8%.
【0023】また、矩形状の水晶板3は、表裏面にスパ
ッタリング蒸着法等により、Alの励振電極31,32
とリード電極312(裏面については図示せず)とが形
成されており、さらにリード電極の端部には長円切り欠
き形状の素子露出部314,324が設けられた接合材
パッド部313,323が形成されている。また、前記
接合材パッド部313,323については、さらに同形
状のマスクを用いてAgが蒸着されている。Further, the rectangular quartz plate 3 is formed on the front and back surfaces by sputtering evaporation method or the like with Al excitation electrodes 31 and 32.
And lead electrodes 312 (the back surface is not shown) are formed, and further, bonding material pad portions 313 and 323 provided with element exposure portions 314 and 324 in the form of oval notches at the ends of the lead electrodes. Are formed. Ag is vapor-deposited on the bonding material pad portions 313 and 323 using a mask having the same shape.
【0024】そして、矩形状の水晶板3を前記素子搭載
台51に搭載し、前記同様のシリコン樹脂系の導電性接
合材52を水晶板3の素子露出部314,324を含む
接合材パッド部313,323に塗布して硬化させるこ
とにより、前記水晶板3と前記導電性接合材による素子
搭載搭載台51との電気的機械的な接合が施される。以
上を収容されたセラミック基板に蓋4をかぶせ、例えば
シーム溶接等の手法により気密封止する。Then, the rectangular crystal plate 3 is mounted on the element mounting table 51, and the same silicone resin-based conductive bonding material 52 as described above is bonded to the bonding material pad portions including the element exposed portions 314 and 324 of the crystal plate 3. By applying and hardening the 313 and 323, the mechanical and mechanical bonding between the quartz plate 3 and the element mounting table 51 by the conductive bonding material is performed. The lid 4 is placed over the ceramic substrate containing the above, and hermetically sealed by, for example, seam welding.
【0025】尚、本発明の第1の実施例では、素子露出
部形状として長円切り欠き形状としたが、円切り欠き形
状や楕円切り欠き形状などでもよく、三角切り欠き形状
や四角切り欠き形状等のような多角形状としても特に問
題はない。また、前記接合材パッド部についてのみAg
を蒸着したが励振電極、リード電極等全ての電極領域に
Agを蒸着してもよい。すなわち、少なくとも2層以上
の多層電極構造とした場合、最上層の電極をAgとすれ
ばよい。例えば、Alの上層にCr、そのさらに上層に
Agとすると好ましい。In the first embodiment of the present invention, the shape of the exposed portion of the element is an elliptical notch, but it may be a circular notch, an ellipse, or the like. There is no particular problem even if it is a polygonal shape such as a shape. Also, Ag is used only for the bonding material pad portion.
Although Ag was vapor-deposited, Ag may be vapor-deposited on all electrode regions such as the excitation electrode and the lead electrode. That is, in the case of a multilayer electrode structure having at least two layers, the uppermost electrode may be made of Ag. For example, it is preferable that the upper layer of Al be Cr and the upper layer be Ag.
【0026】次に、第2の実施例として、セラミックケ
ースを用いた表面実装型の圧電振動子を例にして説明す
る。また、水晶板としてモノリシック水晶フィルタと呼
ばれる多電極水晶板を用いた。図3は本発明の第2の実
施例を示す分解斜視図であり、図4は図3の組み立てた
状態の断面図である。尚、前記第1の実施例と同様の部
分については同番号を付した。Next, as a second embodiment, a surface mount type piezoelectric vibrator using a ceramic case will be described as an example. A multi-electrode crystal plate called a monolithic crystal filter was used as the crystal plate. FIG. 3 is an exploded perspective view showing a second embodiment of the present invention, and FIG. 4 is a sectional view of the assembled state of FIG. The same parts as those in the first embodiment are denoted by the same reference numerals.
【0027】セラミック基板1Aはアルミナからなり、
薄板状に加工され、かつその側面に外部端子を構成する
4つの切り欠き1a,1b,1c,1dが設けられてい
る。このセラミック基板1A上には、前記4つの切り欠
きから導電パッドを構成する素子搭載パッド部11C,
12C,13C,14Cにかけて、図示しない引出電極
(Ag等)がメタライズ処理されている。前記セラミッ
ク基板1Aの上部にさらに、切り抜き15Cが設けられ
たセラミック基板1Cが積層されている。The ceramic substrate 1A is made of alumina,
Four cutouts 1a, 1b, 1c, 1d which are processed into a thin plate and form external terminals are provided on the side surfaces thereof. On the ceramic substrate 1A, an element mounting pad portion 11C, which forms a conductive pad from the four cutouts,
The extraction electrodes (Ag and the like) (not shown) are subjected to the metallizing process in 12C, 13C, and 14C. A ceramic substrate 1C provided with a cutout 15C is further laminated on the ceramic substrate 1A.
【0028】そしてこれらのセラミック基板1A,1C
を焼結することにより、前記切り抜き15Cによる収容
スペースが形成される。そして、前記素子搭載パッド部
11C,12C,13C,14Cの基板露出部112
C、122C(一部のみ図示)上に、導電性接合材を塗
布して硬化させることにより前記導電性接合材の素子搭
載台51を構成する。The ceramic substrates 1A, 1C
By sintering, an accommodation space by the cutout 15C is formed. Then, the substrate exposed portions 112 of the element mounting pad portions 11C, 12C, 13C, and 14C are formed.
An element mounting base 51 of the conductive bonding material is formed by applying and curing a conductive bonding material on C and 122C (only a part is shown).
【0029】この素子搭載台51を構成する導電性接合
材は、シリコン樹脂の接着剤からなり、導体部として例
えば薄板状のAgや球状のAgを含み、かつ酸化還元剤
としてのPdを2〜8%含んだものである。The conductive bonding material forming the element mounting table 51 is made of a silicone resin adhesive, and includes, for example, a thin plate-like Ag or a spherical Ag as a conductor, and a Pd as an oxidation-reduction agent of 2 to 2. It contains 8%.
【0030】また、矩形状の水晶板3は、表裏面にスパ
ッタリング蒸着法等により、Alの上層にCr、さらに
上層にAgを蒸着した励振電極33,34と共通電極3
5、並びにリード電極332,342(裏面については
図示せず)とが形成されており、さらにリード電極の端
部には円形状の素子露出部334,344,354が設
けられた接合材パッド部333,343,353が形成
されている。The rectangular quartz plate 3 has excitation electrodes 33 and 34 in which Cr is deposited on the upper layer of Al, and Ag is deposited on the upper layer, and the common electrode 3 is formed on the front and back surfaces by sputtering deposition or the like.
5 and lead electrodes 332, 342 (the back surface is not shown), and a bonding material pad portion provided with circular element exposure portions 334, 344, 354 at the ends of the lead electrodes. 333, 343, 353 are formed.
【0031】そして、矩形状の水晶板3を前記素子搭載
台51に搭載し、前記同様のシリコン樹脂系の導電性接
合材52を水晶板3の素子露出部334,344,35
4を含む接合材パッド部333,343,353に塗布
して硬化させることにより、前記水晶板3と前記導電性
接合材による素子搭載搭載台51との電気的機械的な接
合が施される。以上を収容されたセラミック基板に蓋4
をかぶせ、例えばシーム溶接等の手法により気密封止す
る。Then, the rectangular crystal plate 3 is mounted on the element mounting table 51, and the same silicon resin-based conductive bonding material 52 as described above is attached to the element exposed portions 334, 344, 35 of the crystal plate 3.
By applying and curing the bonding material pad portions 333, 343, and 353 including No. 4, the electromechanical bonding between the quartz plate 3 and the element mounting base 51 by the conductive bonding material is performed. A lid 4 is placed on the ceramic substrate
And hermetically sealed by a method such as seam welding.
【0032】尚、本発明の第2の実施例では、素子露出
部形状として円形状としたが、楕円形状や長円形状など
でもよく、三角形状や四角形状等のような多角形状とし
ても特に問題はない。In the second embodiment of the present invention, the shape of the element exposed portion is circular, but may be elliptical, elliptical, polygonal such as triangular or quadrangular. No problem.
【0033】尚、本発明の第1,第2の実施例では水晶
振動子や水晶フィルタをあげたが、水晶発振器等に応用
する事も可能であるし、弾性表面波素子、圧電セラミッ
ク振動子や圧電セラミックフィルタ、あるいはコンデン
サ素子、焦電素子等に転用できることはいうまでもな
い。また、矩形状の素子に限らず、円盤形状の素子でも
実施できることはいうまでもない。In the first and second embodiments of the present invention, a quartz oscillator or a quartz filter is used. However, the present invention can be applied to a quartz oscillator, a surface acoustic wave device, a piezoelectric ceramic oscillator, and the like. Needless to say, it can be diverted to a piezoelectric ceramic filter, a capacitor element, a pyroelectric element, or the like. Needless to say, the present invention can be implemented not only with a rectangular element but also with a disk-shaped element.
【0034】[0034]
【発明の効果】特許請求項1により、導電性接合材中の
O2を取り去るため導電性(金属片もしくは金属球)を
劣化(酸化による導電率の低下)させなく、耐衝撃性の
高い支持構造が得られる。そして、従来のサポートのス
ペースを考慮することなく電子部品としての軽量化・薄
型化・小型化がはかれる。また、従来のサポート形成工
程を考慮することなく製造上にも簡素化がはかれる。According to the first aspect of the present invention, since the O 2 in the conductive bonding material is removed, the support (metal piece or metal sphere) is not deteriorated (the conductivity is reduced by oxidation) and the impact resistance is high. The structure is obtained. The weight, thickness, and size of the electronic component can be reduced without considering the space for the conventional support. Further, the manufacturing can be simplified without considering the conventional support forming process.
【0035】特許請求項2により、上述した作用効果に
加えて、一度塗布した導電性接合材(第1の塗布部)の
上に素子を搭載し、その後もう一度導電性接合材(第2
の塗布部)を塗布して硬化接合することができるため、
搭載精度の向上と接合強度の向上がはかれる。According to the present invention, in addition to the above-described functions and effects, the element is mounted on the conductive bonding material (first coated portion) once applied, and then the conductive bonding material (second coating) is again applied.
Can be applied and cured and joined.
The mounting accuracy and the bonding strength are improved.
【0036】特許請求項3により、上述した作用効果に
加えて、AgはAl等に比べて比較的酸化が起こりにく
いため、同電極上に酸化膜ができにくく、導電性接合材
との導電性の低下をまねきにくい。そして、導電性接合
材とのなじみがよいため、基板と素子のより強固な電気
的機械的接合が可能となる。そのため、より耐衝撃性が
向上し、強度も向上するより信頼性の高い支持構造が得
られる。According to the third aspect, in addition to the above-mentioned effects, Ag is relatively less likely to be oxidized than Al or the like. It is hard to lead to a decrease in Further, since the substrate and the element are well compatible with each other, stronger electric and mechanical bonding between the substrate and the element can be achieved. Therefore, a more reliable support structure with improved impact resistance and improved strength can be obtained.
【0037】特許請求項4により、素子が露出した部分
と導電性接合材、あるいは基板が露出した部分と導電性
接合材とのぬれ性によるなじみがより強く、基板と素子
とのさらにより一層強固な機械的な接合が可能となる。
そのため、より一層耐衝撃性が向上し、強度も向上する
より一層信頼性の高い支持構造が得られる。According to the fourth aspect, the wettability between the exposed portion of the element and the conductive bonding material or the exposed portion of the substrate and the conductive bonding material is stronger, and the substrate and the element can be further strengthened. Mechanical joining becomes possible.
Therefore, a more reliable support structure with further improved impact resistance and improved strength can be obtained.
【0038】特許請求項5により、上述した作用効果に
加えて、素子が露出した部分と導電性接合材、あるいは
基板が露出した部分と導電性接合材とのぬれ性によるな
じみがより強く、基板と素子とのさらにより一層強固な
機械的な接合が可能となる。そのため、より一層耐衝撃
性が向上し、強度も向上するより一層信頼性の高い支持
構造が得られる。According to the fifth aspect, in addition to the above-described effects, the wettability between the exposed portion of the element and the conductive bonding material or the wettability between the exposed portion of the substrate and the conductive bonding material is stronger, and An even stronger mechanical connection between the element and the element can be achieved. Therefore, a more reliable support structure with further improved impact resistance and improved strength can be obtained.
【図1】本発明の第1の実施例を示す分解者斜視図であ
る。FIG. 1 is an exploded perspective view showing a first embodiment of the present invention.
【図2】図1の組み立てた状態の断面図である。FIG. 2 is a cross-sectional view of the assembled state of FIG.
【図3】本発明の第2の実施例を示す分解者斜視図であ
る。FIG. 3 is an exploded perspective view showing a second embodiment of the present invention.
【図4】図3の組み立てた状態の断面図である。FIG. 4 is a sectional view of the assembled state of FIG. 3;
【図5】従来の実施例を示す分解者斜視図である。FIG. 5 is an exploded perspective view showing a conventional example.
1A,1B,1C・・・セラミック基板 21,22,23,24・・・サポート 3・・・水晶板 4・・・蓋 51,52・・・シリコン樹脂系の導電性接合材 1A, 1B, 1C: Ceramic substrate 21, 22, 23, 24: Support 3: Crystal plate 4: Lid 51, 52: Silicone resin conductive bonding material
Claims (5)
た基板が有り、前記引出電極に素子搭載パッド部を設
け、また、主電極とリード電極が設けられた素子が有
り、前記素子のリード電極一端に接合材パッド部を設
け、前記素子搭載パッド部と前記接合材パッド部とが少
なくともシリコン系の導電性接合材を介して電気的機械
的に接合されて、前記基板上に前記素子が搭載されてお
り、前記素子を搭載した基板に蓋体を封止してなる表面
実装型電子部品において、 前記導電性接合材にPdを混入させ、かつ当該Pdの導
電性接合材に対する歩合として2〜8%混入させた事を
特徴とする表面実装型電子部品。1. A substrate on which an extraction electrode electrically connected to an external circuit is formed, an element mounting pad portion is provided on the extraction electrode, and an element on which a main electrode and a lead electrode are provided is provided. only set <br/> the bonding material pad portion to the electrode at one end, said element mounted via a conductive bonding material silicon even the pad portion and the bonding material pad portion small <br/> without electrical mechanical In a surface-mounted electronic component in which the element is mounted on the substrate by being joined and a lid is sealed to the substrate on which the element is mounted, Pd is mixed into the conductive bonding material , and Derivation of the Pd
A surface-mounted electronic component characterized in that 2 to 8% is mixed as a percentage of an electric bonding material .
2の塗布部を具備し、 前記第1の塗布部は、前記基板の素子搭載パッド部と素
子のリード電極の間に介在して形成され、 前記第2の塗布部は、前記第1の塗布部と当該第2の塗
布部の間に前記素子が介在するように、前記素子の上面
から当該素子の側端面を経由して前記第1の塗布部へと
形成されてなる 事を特徴とする特許請求項1記載の表面
実装型電子部品。2. The method according to claim 1, wherein the conductive bonding material includes a first coating portion and a second coating portion.
And a first coating unit, the first coating unit being in contact with an element mounting pad unit of the substrate.
A second coating portion formed between the first coating portion and the second coating portion.
The upper surface of the element so that the element is interposed between the cloth portions
Through the side end surface of the element to the first coating section
A surface mount electronic device of claims 1, wherein a composed is formed.
と前記基板の素子搭載パッド部の表面がAgである事を
特徴とする特許請求項1、2記載の表面実装型電子部
品。3. A bonding material pad portion of a lead electrode of the device.
3. The surface-mounted electronic component according to claim 1 , wherein the surface of the element mounting pad portion of the substrate is made of Ag.
た基板が有り、前記引出電極に素子搭載パッド部を設
け、また、主電極とリード電極が設けられた素子が有
り、前記素子のリード電極一端に接合材パッド部を設
け、前記素子搭載パッド部と前記接合材パッド部とが少
なくともシリコン系の導電性接合材を介して電気的機械
的に接合されて、前記基板上に前記素子が搭載されてお
り、前記素子を搭載した基板に蓋体を封止してなる表面
実装型電子部品において、 素子のリード電極の接合材パッド部分、あるいは前記基
板の素子搭載パッド部の少なくとも一方には、素子、あ
るいは基板が露出する部分が形成されており、 前記素子
露出部を含む素子のリード電極の接合材パッド部分で、
あるいは前記基板露出部を含む素子搭載パッド部分で、
当該接合材パッド部分と素子搭載パッド部分とがお互い
に接合されてなる事を特徴とする表面実装型電子部品。4. A substrate on which an extraction electrode electrically connected to an external circuit is formed, an element mounting pad portion is provided on the extraction electrode, and an element on which a main electrode and a lead electrode are provided is provided. only set <br/> the bonding material pad portion to the electrode at one end, said element mounted via a conductive bonding material silicon even the pad portion and the bonding material pad portion small <br/> without electrical mechanical In a surface-mounted electronic component in which the element is mounted on the substrate by being bonded and a lid is sealed to the substrate on which the element is mounted, a bonding material pad portion of a lead electrode of the element, or the least one of the element mounting pad portion of the substrate is formed with a portion element or substrate, it is exposed, the device
In the bonding material pad part of the lead electrode of the element including the exposed part,
Alternatively, at the element mounting pad portion including the substrate exposed portion,
The bonding material pad part and the element mounting pad part
Surface-mounted electronic components characterized by being bonded to a surface.
あるいは前記基板の素子搭載パッド部の少なくとも一方
には、素子、あるいは基板が露出する部分が形成されて
おり、前記素子露出部を含む素子のリード電極の接合材
パッド部分の全体で、あるいは前記基板露出部を含む素
子搭載パッド部分の全体で、お互いに接合されてなる事
を特徴とする特許請求項1〜3いずれか1項に記載の表
面実装型電子部品。5. A bonding material pad portion of a lead electrode of an element,
Alternatively, at least one of the element mounting pad portions of the substrate has a portion where the element or the substrate is exposed.
And a bonding material for a lead electrode of an element including the element exposed portion.
The entire pad portion or the element including the substrate exposed portion
The surface-mounted electronic component according to any one of claims 1 to 3 , wherein the whole of the child mounting pad portions are joined to each other .
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6303113A JP3063066B2 (en) | 1994-11-11 | 1994-11-11 | Surface mount electronic components |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6303113A JP3063066B2 (en) | 1994-11-11 | 1994-11-11 | Surface mount electronic components |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH08139426A JPH08139426A (en) | 1996-05-31 |
JP3063066B2 true JP3063066B2 (en) | 2000-07-12 |
Family
ID=17917045
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6303113A Expired - Lifetime JP3063066B2 (en) | 1994-11-11 | 1994-11-11 | Surface mount electronic components |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP3063066B2 (en) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6445108B1 (en) * | 1999-02-19 | 2002-09-03 | Murata Manufacturing Co., Ltd. | Piezoelectric acoustic component |
SE0004547D0 (en) * | 2000-12-07 | 2000-12-07 | Amersham Pharmacia Biotech Kk | Chip quartz oscillator and sensor |
JP2006211089A (en) * | 2005-01-26 | 2006-08-10 | Daishinku Corp | Piezoelectric vibration device |
JP2007166435A (en) * | 2005-12-15 | 2007-06-28 | Daishinku Corp | Crystal oscillation device |
-
1994
- 1994-11-11 JP JP6303113A patent/JP3063066B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JPH08139426A (en) | 1996-05-31 |
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