JP3060536B2 - Electric joining method of ceramics - Google Patents
Electric joining method of ceramicsInfo
- Publication number
- JP3060536B2 JP3060536B2 JP2340864A JP34086490A JP3060536B2 JP 3060536 B2 JP3060536 B2 JP 3060536B2 JP 2340864 A JP2340864 A JP 2340864A JP 34086490 A JP34086490 A JP 34086490A JP 3060536 B2 JP3060536 B2 JP 3060536B2
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- insert material
- conductive
- bonded
- ceramics
- joining
- Prior art date
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Description
【発明の詳細な説明】 ＜産業上の利用分野＞ 本発明は、導電性セラミックス同士または導線性セラ
ミックスと金属との接合に際して、被接合部材同士の突
合せ部を局部加熱する電気接合方法に関するものであ
る。Description: TECHNICAL FIELD The present invention relates to an electric joining method for locally heating an abutting portion between members to be joined at the time of joining conductive ceramics or conductive ceramics and metal. is there.
＜従来技術と発明が解決しようとする問題点＞ 例えば、導電性セラミックスと金属とを接合する場
合、従来は第３図に示すように、被接合導電性セラミッ
クス部材1aと被接合金属部材２とを、導電性接合剤４を
介在させて突合せ、これらを挟むように図示しない電源
装置に接続された２つの通電電極6a,6bが突合せ面に対
して対向配置される。接合時は突合せ面に垂直方向の電
流を流して、導電性セラミックス部材1aで発生するジュ
ール熱によって、接合剤４を溶融させてセラミックスと
金属とを接合している。<Problems to be Solved by the Prior Art and the Invention> For example, when a conductive ceramic and a metal are bonded, conventionally, as shown in FIG. The two conductive electrodes 6a and 6b connected to a power supply device (not shown) are disposed so as to face the abutting surface so as to sandwich the conductive bonding agent 4 therebetween. At the time of joining, a current in a vertical direction is applied to the butted surface, and the bonding agent 4 is melted by Joule heat generated in the conductive ceramic member 1a to join the ceramic and the metal.
しかし、この場合及び導電性セラミックス同士を上記
のように接合する場合においても、導電性セラミックス
部材1a（,1b）全体が一様なジュール熱を発生し加熱さ
れるために、特に電極6a,6bと突合せ部とが離れている
場合には、突合せ部のみを集中的に所望の接合温度に効
率よく加熱させることができないために、電力消費の点
で無駄が多い。However, even in this case and when the conductive ceramics are joined together as described above, since the entire conductive ceramics member 1a (, 1b) generates uniform Joule heat and is heated, the electrodes 6a, 6b If the butting portion is far from the joining portion, only the butting portion cannot be intensively heated to the desired joining temperature efficiently, so that there is much waste in terms of power consumption.
そこで、電極6a,6bを突合せ部の近傍に配設すること
によって、突合せ部を効率よく加熱させることができる
が、電極6a,6bへの熱伝導による熱放散のために、所望
の接合温度に加熱するのに多くの電力を必要とする。ま
た、接合温度が高い場合は、電極が溶損して、安定した
通電ができなくなる問題が生じる。Therefore, by arranging the electrodes 6a and 6b near the butting portion, the butting portion can be efficiently heated.However, in order to dissipate heat by heat conduction to the electrodes 6a and 6b, a desired joining temperature is obtained. Requires a lot of power to heat. In addition, when the bonding temperature is high, there is a problem in that the electrodes are melted and the current cannot be stably supplied.
＜問題点を解決するための手段＞ 上記の問題点を解決するために、本発明においては、
被接合導電性セラミックス部材間または被接合導電性セ
ラミックス部材と被接合金属部材との間に、一部または
全部が被接合部材の抵抗率よりも大きい抵抗率を有し、
かつ開放気孔を有する導電性セラミックスからなるイン
サート材を介在させて突合せるか、またはインサート材
の少なくとも片方の突合せ面側に導電性接合剤を介在さ
せて突合せ、被接合部材の両端部に通電電極を設けて被
接合部材間に電流を通じることによって、インサート材
に集中的に生じるジュール熱により突合せ部を局部加熱
し、接合剤及び（または）被接合部材の突合せ部を溶融
させることによって、インサ−ト材の開放気孔の一部ま
たは全部を含浸して接合することを特徴としている。<Means for Solving the Problems> In order to solve the above problems, in the present invention,
Between the conductive ceramic members to be bonded or between the conductive ceramic member to be bonded and the metal member to be bonded, a part or the whole thereof has a resistivity higher than the resistivity of the member to be bonded,
And butting with an insert material made of conductive ceramics having open pores or butting with at least one butting surface side of the insert material with a conductive bonding agent interposed therebetween. Is provided to locally heat the butt portion by Joule heat generated intensively in the insert material, thereby melting the butt portion of the bonding agent and / or the member to be joined, thereby providing an insulator. -It is characterized by impregnating and joining some or all of the open pores of the material.
＜作用＞ 以上のような方法とすることにより、被接合部材間に
挿入したインサ−ト材の抵抗率が最も大きく選定されて
いるので、上記部材間に電流を通じることによるジュ−
ル熱をインサ−ト材により多く発生させることができ、
被接合部材の突合せ部がより高音に加熱される。その結
果、溶融した接合剤及び（または）被接合部材を開放気
孔に含浸させることができる。<Operation> By adopting the above method, the resistivity of the insert material inserted between the members to be joined is selected to be the largest, so that the current flowing between the above members can be used to reduce the joule.
Heat can be generated more by the insert material,
The butted portion of the members to be joined is heated to a higher sound. As a result, the molten bonding agent and / or the member to be bonded can be impregnated into the open pores.
＜実施例＞ 第１図は本発明の方法を適用した一実施例を示す概略
断面図であって、導電性セラミックス部材1a,1b間に、
導電性を有し、かつ開放気孔を有するインサート材３を
挿入して、このインサート材３の両側に適宜の導電性接
合剤4,5を介在させて突合せ、被接合部材を挟むように
２つの電極6a,6bが突合せ面に対して対向配置される。<Example> FIG. 1 is a schematic cross-sectional view showing an example to which the method of the present invention is applied, in which a conductive ceramic member 1a, 1b is provided.
An insert material 3 having conductivity and having open pores is inserted, and butted on both sides of the insert material 3 with appropriate conductive bonding agents 4 and 5 interposed therebetween so as to sandwich the member to be bonded. The electrodes 6a and 6b are arranged to face the butting surfaces.
第２図は本発明の方法を適用した他の実施例を示す概
略断面図であって、セラミックス部材1aと金属部材２と
の間に上記のインサ−ト材３を挿入して、このインサ−
ト材３のセラミックス部材1a側の面に導電性接合剤４を
介在させて突合せ、電極6a,6bを上記と同様に配置す
る。FIG. 2 is a schematic sectional view showing another embodiment to which the method of the present invention is applied, wherein the above-mentioned insert material 3 is inserted between a ceramic member 1a and a metal member 2 to insert the insert member.
The electrodes 6a and 6b are arranged in the same manner as described above with the conductive bonding agent 4 interposed therebetween on the surface of the metal member 3 on the ceramic member 1a side.
通電に際しては、突合せ部の接触抵抗を極力小さく
し、突合せ部全体を均一に加熱させるために、10kg/cm2
以上の圧力を加えて、電極6a,6bを通して被接合部材間
に電流を通じることによって、第１図に示す実施例にお
いては、導電性セラミックス部材1a,接合剤4,インサー
ト材3,接合剤5,導電性セラミックス部材1bに、また第２
図に示す実施例においては、セラミックス部材1a,接合
剤4,インサート材3,金属部材２に、それぞれの抵抗率に
応じたジュール熱が発生する。ところで、インサート材
３の抵抗率が最も大きく選定されているために、インサ
ート材３自体の温度上昇と導電性セラミックス部材1a,1
b自体の温度上昇とが相俟って、突合せ部が効果的に加
熱される。その結果、前者の実施例では、接合剤4,5が
溶融し、インサート材３の開放気孔内へ移動して、この
開放気孔を含浸すると共に、それぞれ導電性セラミック
ス部材1aとインサート材３及びセラミックス部材1bとイ
ンサート材３とに反応し、強固な接合が形成される。During energization, the contact resistance of the butt joint should be minimized and the entire butt joint should be heated evenly to 10 kg / cm 2
By applying the above pressure and passing a current between the members to be bonded through the electrodes 6a and 6b, in the embodiment shown in FIG. 1, the conductive ceramic member 1a, the bonding agent 4, the insert material 3, the bonding agent 5 The conductive ceramic member 1b and the second
In the embodiment shown in the figure, Joule heat is generated in the ceramic member 1a, the bonding agent 4, the insert material 3, and the metal member 2 according to the respective resistivity. By the way, since the resistivity of the insert material 3 is selected to be the largest, the temperature rise of the insert material 3 itself and the conductive ceramic members 1a, 1
The butting portion is effectively heated in combination with the temperature rise of b itself. As a result, in the former embodiment, the bonding agents 4 and 5 are melted, move into the open pores of the insert material 3 and impregnate the open pores, and at the same time, respectively, the conductive ceramic member 1a, the insert material 3 and the ceramic material. Reacting with the member 1b and the insert material 3, a strong bond is formed.
また、後者の実施例では、接合剤４及び（または）金
属部材２が溶融し、インサ−ト材３の開放気孔内へ移動
して、この開放気孔を含浸すると共に、それぞれ導電性
セラミックス部材1aとインサート材３及びインサート材
３とに反応し、強固な接合が形成される。In the latter embodiment, the bonding agent 4 and / or the metal member 2 is melted, moves into the open pores of the insert material 3, and impregnates the open pores. And the insert material 3 and the insert material 3 to form a strong bond.
本発明の導電性セラミックス部材1a,1bとしては、Si
C,TiCなどの炭化物、TiN,ZrNなどの窒化物、MoSi2など
のケイ化物、ZrB2のホウ化物、Si3N4,Al2O3などの絶縁
性セラミックスに上記SiC,TiNなどの導電性セラミック
スを含有させた複合導電性セラミックス、Si3N4,Al2O3
に金属を含有させたサーメットなどが例示できる。As the conductive ceramic members 1a and 1b of the present invention, Si
C, carbides such as TiC, TiN, nitrides such as ZrN, silicides such as MoSi 2, borides of ZrB 2, Si 3 N 4, an insulating ceramic in the SiC, such as Al 2 O 3, conductive, such as TiN Conductive ceramics containing conductive ceramics, Si 3 N 4 , Al 2 O 3
And a cermet containing a metal.
ここで、本発明の特徴であるインサート材３として
は、被接合部材の抵抗率よりも大きい抵抗率を有し、か
つ開放気孔を有する材料を選定する必要があり、上記導
電性セラミックスの何れでも使用可能であるが、好まし
くは、導電性以外の物性値、性能面で等価な特性が得ら
れることから、被接合セラミックスと同種のセラミック
スを使用する方が望ましい。抵抗率の変化は、気孔率を
変化させることによっても得られるが、その他に単一セ
ラミックスにおいても、含まれる不純物の種類や量、焼
結条件などでも大きく変化し、複合導電性セラミックス
やサーメットにおいては、組成変化による、大きく変化
させることができる。これらの方法により、被接合部材
に応じて適当な抵抗率を有する材料を選定する必要があ
る。被接合部材との抵抗率差が大きいほど電力効率の点
では有効であるが、温度分布も大きくなり、残留応力な
どの点にも注意を払う必要がある。残留応力の点では、
インサ−ト材の熱膨張率が被接合部材の熱膨張率より少
し小さくなるように材料を選定するのが好ましい。ま
た、開放気孔の形成方法としては、成形圧力や焼結温度
など製造プロセス条件を制御したり、原料中に発砲材を
混入したり、焼成中または後にエッチング、その他の手
段で構成物の一部を選択的に除去する方法などがある
が、何れの方法であっても良い。開放気孔はインサ−ト
材全体にほぼ均一に存在していても良いし、少なくとも
片方の突合せ面側のある深さまでだけ存在していても良
い。また、気孔率は均一であっても、深さ方向に変化し
ても良い。Here, as the insert material 3 that is a feature of the present invention, it is necessary to select a material having a resistivity greater than the resistivity of the member to be joined and having open pores. Although it can be used, it is preferable to use ceramics of the same type as the ceramics to be joined, since it is possible to obtain properties equivalent to physical properties other than conductivity and performance. The change in resistivity can also be obtained by changing the porosity, but also in single ceramics, the type and amount of impurities contained, the sintering conditions, etc. vary greatly, and in composite conductive ceramics and cermets Can be largely changed by a change in composition. By these methods, it is necessary to select a material having an appropriate resistivity according to a member to be joined. The greater the difference in resistivity from the member to be joined, the more effective in terms of power efficiency, but the temperature distribution also increases and attention must be paid to residual stress and the like. In terms of residual stress,
It is preferable to select the material so that the thermal expansion coefficient of the insert material is slightly smaller than the thermal expansion coefficient of the member to be joined. In addition, as a method of forming open pores, controlling the manufacturing process conditions such as molding pressure and sintering temperature, mixing a foaming material into the raw material, etching during or after firing, a part of the components by other means, Is selectively removed, but any method may be used. The open pores may be present almost uniformly throughout the insert material, or may be present only at least to a certain depth on one of the abutting surfaces. Further, the porosity may be uniform or may vary in the depth direction.
本発明の方法を実施するときの接合雰囲気としては、
被接合部材，インサート材，接合剤の特性により、大
気，不活性ガス，真空などを適宜に選択する必要があ
る。As the bonding atmosphere when performing the method of the present invention,
Depending on the characteristics of the member to be joined, the insert material, and the joining agent, it is necessary to appropriately select an atmosphere, an inert gas, a vacuum, or the like.
実施例１ 導電性セラミックス部材1a,1bとして、それぞれ抵抗
率が約10-2Ω・cmの角柱状の緻密質SiCセラミックス（1
5mm×15mm×20mm）、インサート材３として、抵抗率が
約10-1Ω・cmで、平均的な気孔率が約15容積％の開放気
孔を全体に有する板状のSiCセラミックス（15mm×15mm
×4mm），接合剤4,5として、Ti系活性金属ろう材箔（厚
さ、約200μｍ）を用い、これらを第１図のように重ね
合せて、約50kg/cm2の圧力Ｐを加えて固定した。接合雰
囲気は真空（10-5Torr）とし、上記導線性セラミックス
1a,1bの上面、下面にそれぞれ設けたカ−ボン製の通電
電極6a,6b間に図示しない電源より電圧を印加し、通電
を開始した。通電電流を徐々に増加すると、インサ−ト
材の抵抗率が他の部材より大きいため、その発熱も最も
大きくなり、インサ−ト材を中心として突合せ部全体が
加熱される。突合せ部の温度を放射温度計により測定
し、その温度が約950℃になるように電流を制御し、接
合剤を溶融させる。10分保持した後、再び電流を徐々に
減少させて、室温まで冷却し、接合を完了した。接合後
の接合部を光学顕微鏡で観察した結果、上記インサ−ト
材の開放気孔全体に接合剤が含侵されており、接合層も
約10μｍの良好な状態で形成されていることがかった。
ここでは、開放気孔全体が接合剤によって含侵されてい
るが、突合せ面からある深さまでだけ含侵されていても
良い。なお、比較のためにインサ−ト材のない構成で同
じ導電性セラミックス同士を同条件で接合した。その比
較結果を第１表に示す。実施例の接合体の方が接合に必
要な電力量も少なくて済み、接合強度も大きいことがか
る。Example 1 As the conductive ceramic members 1a and 1b, prismatic dense SiC ceramics having a resistivity of about 10 -2 Ω · cm (1
5mm × 15mm × 20mm), as the insert material 3, a plate-shaped SiC ceramic (15mm × 15mm) having open pores with a resistivity of about 10 -1 Ω · cm and an average porosity of about 15% by volume
× 4mm), Ti-based active metal brazing foils (thickness: about 200 μm) were used as bonding agents 4 and 5, and these were superimposed as shown in FIG. 1 and a pressure P of about 50 kg / cm 2 was applied. Fixed. The bonding atmosphere is vacuum (10 -5 Torr), and the above conductive ceramics
A voltage was applied from a power supply (not shown) between the carbon energizing electrodes 6a and 6b provided on the upper and lower surfaces of 1a and 1b, respectively, to start energization. When the conduction current is gradually increased, the heat generated by the insert material becomes the largest since the resistivity of the insert material is larger than that of the other members, and the entire butted portion is heated around the insert material. The temperature of the butt portion is measured by a radiation thermometer, and the current is controlled so that the temperature becomes approximately 950 ° C., thereby melting the bonding agent. After holding for 10 minutes, the current was gradually reduced again and cooled to room temperature to complete the joining. As a result of observing the joined portion with an optical microscope after the joining, it was found that the joining material was impregnated into the entire open pores of the insert material, and that the joining layer was formed in a favorable state of about 10 μm.
Here, the entire open pores are impregnated with the bonding agent, but may be impregnated only to a certain depth from the abutting surface. For comparison, the same conductive ceramics were joined together under the same conditions in a configuration without an insert material. Table 1 shows the comparison results. It can be seen that the joined body of the embodiment requires less electric power for joining and has a larger joining strength.
実施例２ 導電性セラミックス部材1a,1bとして、それぞれ抵抗
率が約10-2Ω・cmのパイプ状のSi含浸反応焼結SiCセラ
ミックス（φ10mm×φ5mm×30mm）、インサート材３と
して、上記導電性セラミックス部材1a,1bと同質のSiC
で、その両突合せ面側の厚さ約1mmの部分の含浸Siをエ
ッチングにより取り除き、開放気孔を形成したもので、
その部分の抵抗率が約10-1Ω・cmと大きくしたもの（φ
10mm×φ5mm×3mm）、接合剤4,5として、SiC,C,Si,バイ
ンダ−からなる混合粉体ペ−ストを用い、上記導電性セ
ラミックス部材1a,1bの突合せ面に塗布し、これらを第
１図に示すように重ね合せて、約50kg/cm2の圧力Ｐを加
えて固定した。接合雰囲気はAr中とし、上記導電性セラ
ミックス1a,1bの上面、下面にそれぞれ設けたカ−ボン
製の通電電極6a,6b間に図示しない電源より電圧を印加
し、通電を開始した。通電電流を徐々に増加すると、イ
ンサ−ト材の開放気孔を有する部分の抵抗率が他の部材
より大きいため、その発熱も最も大きくなり、その部分
を中心として突合せ部全体が加熱される。突合せ部の温
度を放射温度計により測定し、その温度が約1500℃にな
るように電流を制御し、接合剤を溶融させる。10分保持
した後、再び電流を徐々に減少させて、室温まで冷却
し、接合を完了した。接合後の接合部を光学顕微鏡で観
察した結果、上記インサ−ト材の開放気孔の一部に接合
剤が含侵されており、接合層も約30μｍの良好な状態で
形成されていることがかった。 Example 2 As the conductive ceramic members 1a and 1b, pipe-shaped Si-impregnated reaction-sintered SiC ceramics (φ10 mm × φ5 mm × 30 mm) each having a resistivity of about 10 −2 Ω · cm, and as the insert material 3, SiC of the same quality as ceramic members 1a and 1b
Then, the impregnated Si of about 1 mm thickness on both butted surfaces was removed by etching to form open pores,
The resistivity of that part was increased to about 10 -1 Ωcm (φ
(10mm × φ5mm × 3mm), using a mixed powder paste consisting of SiC, C, Si, and binder as the bonding agents 4 and 5 and applying them to the butted surfaces of the conductive ceramic members 1a and 1b. As shown in FIG. 1, they were overlaid and fixed by applying a pressure P of about 50 kg / cm 2 . The bonding atmosphere was Ar, and a voltage was applied from a power supply (not shown) between the carbon-made current-carrying electrodes 6a and 6b provided on the upper and lower surfaces of the conductive ceramics 1a and 1b, respectively, to start energization. When the current is gradually increased, since the resistivity of the portion of the insert material having the open pores is larger than that of the other members, the heat generation becomes maximum, and the entire butted portion is heated around the portion. The temperature of the butted portion is measured by a radiation thermometer, and the current is controlled so that the temperature becomes about 1500 ° C., thereby melting the bonding agent. After holding for 10 minutes, the current was gradually reduced again and cooled to room temperature to complete the joining. Observation of the joint after joining with an optical microscope revealed that a part of the open pores of the insert material was impregnated with a joining agent, and that the joining layer was formed in a favorable state of about 30 μm. Was.
実施例３ 導電性セラミックス部材1aとして、抵抗率が10-2Ω・
cmの円柱状のTiNを含む導電性Al2O3セラミックス（φ7m
m×20mm）、被接合金属部材２として、同寸法のアルミ
ニウムとし、インサート材３として、上記導電性セラミ
ックス部材1aに比べてTiN量を少なくした導電性Al2O3セ
ラミックスで、その平均的な抵抗率が約10-1Ω・cm、気
孔率が片方の突合せ面から深さ方向に向かって連続的に
減少するように形成されたもの（φ7mm×5mm）、接合剤
４として、Al箔（厚さ、約100μｍ）を用い、上記イン
サ−ト材の気孔率の大きい突合せ面側を金属部材側と
し、これらを第２図のように重ね合せて、約50kg/cm2の
圧力Ｐを加えて固定した。接合雰囲気は真空（10-5Tor
r）とし、上記導電性セラミックス1aと金属部材２の上
面、下面にそれぞれ設けたカ−ボン製の通電電極6a,6b
間に図示しない電源より電圧を印加し、通電を開始し
た。通電電流を徐々に増加すると、インサ−ト材の抵抗
率が他の部材より大きいため、その発熱も最も大きくな
り、インサ−ト材を中心として突合せ部全体が加熱され
る。突合せ部の温度を放射温度計により測定し、その温
度が約700℃になるように電流を制御し、接合剤４及び
金属部材２の突合せ部を溶融させる。２分保持した後、
図示しない加圧装置により、約500kg/cm2の荷重をかけ
ると共に、再び電流を徐々に減少させて、室温まで冷却
し、接合を完了した。接合後の接合部を光学顕微鏡で観
察した結果、上記インサ−ト材の開放気孔全体に接合剤
及び金属部材成分が含侵されており、良好な接合状態が
形成されていることがかった。ここで、気孔率を連続的
に変化させたのは、金属との接合における残留応力の影
響を緩和するためである。また、ここで用いた導電性Al
2O3セラミックスとアルミニウムは直接でも反応を起こ
すため、接合剤４としてAl箔を設けなくても、突合せ部
のアルミニウムが溶融し、インサ−ト材の開放気孔を通
じて、導電性Al2O3セラミックスとインサ−ト材の界面
にしみ出すことにより、両者を接合することも可能であ
る。さらに、本例では被接合セラミックス部材側にのみ
接合剤を設けているが、金属部材側のみ、または両側共
に接合剤を設けて、接合することも可能である。Example 3 As the conductive ceramic member 1a, the resistivity was 10 −2 Ω ·
cm2 conductive Al 2 O 3 ceramics containing TiN (φ7m
m × 20 mm), the metal member 2 to be joined is aluminum of the same dimensions, and the insert material 3 is a conductive Al 2 O 3 ceramic having a smaller amount of TiN than the conductive ceramic member 1a. It is formed so that the resistivity is about 10 -1 Ω · cm and the porosity decreases continuously from one butt surface in the depth direction (φ7 mm × 5 mm). The thickness of the insert material is about 100 μm), the butted surface side of the insert material having a high porosity is the metal member side, and these are overlapped as shown in FIG. 2 and a pressure P of about 50 kg / cm 2 is applied. Fixed. The bonding atmosphere is vacuum (10 -5 Tor
r), conductive electrodes 6a and 6b made of carbon provided on the upper and lower surfaces of the conductive ceramic 1a and the metal member 2, respectively.
During this time, a voltage was applied from a power supply (not shown) to start energization. When the conduction current is gradually increased, the heat generated by the insert material becomes the largest since the resistivity of the insert material is larger than that of the other members, and the entire butted portion is heated around the insert material. The temperature of the butted portion is measured by a radiation thermometer, and the current is controlled so that the temperature becomes approximately 700 ° C., so that the butted portion of the bonding agent 4 and the metal member 2 is melted. After holding for 2 minutes,
With a pressing device (not shown), a load of about 500 kg / cm 2 was applied, the current was gradually reduced again, and the mixture was cooled to room temperature to complete the joining. As a result of observing the joined portion after the joining with an optical microscope, it was found that the joining material and the metal member component were impregnated into the entire open pores of the insert material, and that a good joined state was formed. Here, the reason why the porosity is continuously changed is to alleviate the influence of residual stress in joining with a metal. Also, the conductive Al used here
Since 2 O 3 ceramics and aluminum directly react with each other, even if Al foil is not provided as the bonding agent 4, the aluminum at the butt portion is melted and the conductive Al 2 O 3 ceramics is passed through the open pores of the insert material. It is also possible to join the two by extruding at the interface of the insert and the insert material. Further, in this example, the bonding agent is provided only on the ceramic member side to be bonded, but it is also possible to provide the bonding agent only on the metal member side or on both sides to perform bonding.
＜発明の効果＞ 以上のように、本発明によれば、インサート材の構成
を簡素化して突合せ部をジュール熱により効果的に加熱
させることができるので、電力消費に伴うランニングコ
ストの低減が図られ、また特殊な電極材料を考慮しなく
てもよく、通常使用される材料でよいので、コスト面で
有利である。<Effects of the Invention> As described above, according to the present invention, since the configuration of the insert material can be simplified and the butt portion can be effectively heated by Joule heat, the running cost associated with power consumption can be reduced. Also, it is not necessary to consider a special electrode material, and a commonly used material may be used, which is advantageous in terms of cost.
また、開放気孔に溶融した接合剤及び（または）被接
合金属部材が含浸されるので、その接触面積が大きくな
り、かつ、くさび効果も相俟って接合強度を高めること
ができる。In addition, since the open pores are impregnated with the molten bonding agent and / or the metal member to be bonded, the contact area becomes large, and the bonding strength can be increased in combination with the wedge effect.
さらに、金属など熱膨張率差のある材料同士を接合す
る際に問題となる残留応力を緩和させることができる。Further, it is possible to alleviate the residual stress which is a problem when joining materials having a difference in thermal expansion coefficient such as metals.
また、通電電極を突合せ部から離して配設することに
よって、電極への熱伝導による熱放散が少なくなるの
で、所望の接合温度に加熱するのに多くの電力を必要と
しない。また、接合温度が高くても、電極を溶損させる
ことなく安定した通電ができる。Further, by disposing the current-carrying electrode away from the butting portion, heat dissipation due to heat conduction to the electrode is reduced, so that much electric power is not required to heat the electrode to a desired bonding temperature. In addition, even when the bonding temperature is high, it is possible to conduct electricity stably without melting the electrodes.
第１図は、本発明の方法を適用した一実施例を示す概略
断面図である。 第２図は、本発明の方法を適用した他の実施例を示す概
略断面図である。 第３図は、従来方法を示す概略断面図である。FIG. 1 is a schematic sectional view showing one embodiment to which the method of the present invention is applied. FIG. 2 is a schematic sectional view showing another embodiment to which the method of the present invention is applied. FIG. 3 is a schematic sectional view showing a conventional method.
───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 平１−320273（ＪＰ，Ａ) 特開 平２−320276（ＪＰ，Ａ) 特開 平２−88470（ＪＰ，Ａ) 特開 昭63−139071（ＪＰ，Ａ) (58)調査した分野(Int.Cl.7，ＤＢ名) C04B 37/00 B23K 11/16 ──────────────────────────────────────────────────続 き Continuation of the front page (56) References JP-A-1-320273 (JP, A) JP-A-2-320276 (JP, A) JP-A-2-88470 (JP, A) JP-A-63- 139071 (JP, A) (58) Fields investigated (Int. Cl. 7 , DB name) C04B 37/00 B23K 11/16
Claims (1)
接合導電性セラミックス部材と被接合金属部材との間
に、一部または全部が前記被接合部材の抵抗率よりも大
きい抵抗率を有し、かつ開放気孔を有する導電性セラミ
ックスからなるインサート材を介在させて突合せるか、
または前記インサート材の少なくとも片方の突合せ面側
に導電性接合剤を介在させて突合せ、前記被接合部材の
両端部に通電電極を設けて被接合部材間に電流を通じる
ことによって、前記インサート材に集中的に生じるジュ
ール熱により前記突合せ部を局部加熱し、前記接合剤及
び（または）被接合部材の突合せ部を溶融させることに
よって、前記インサート材の開放気孔の一部または全部
を含浸して接合するセラミックスの電気接合方法。1. A method according to claim 1, wherein a part or the whole of the conductive ceramic members to be bonded or between the conductive ceramic member to be bonded and the metal member to be bonded has a resistivity higher than the resistivity of the member to be bonded. Or butting with an insert material made of conductive ceramics having open pores
Alternatively, butting is performed by interposing a conductive bonding agent on at least one butting surface side of the insert material, and a current-carrying electrode is provided at both ends of the member to be bonded so that a current flows between the members to be bonded. The butt portion is locally heated by Joule heat generated intensively, and the butt portion of the joining agent and / or the member to be joined is melted to impregnate and join a part or all of the open pores of the insert material. Electrical joining method for ceramics.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2340864A JP3060536B2 (en) | 1990-11-30 | 1990-11-30 | Electric joining method of ceramics |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2340864A JP3060536B2 (en) | 1990-11-30 | 1990-11-30 | Electric joining method of ceramics |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04209765A JPH04209765A (en) | 1992-07-31 |
| JP3060536B2 true JP3060536B2 (en) | 2000-07-10 |
Family
ID=18341017
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2340864A Expired - Lifetime JP3060536B2 (en) | 1990-11-30 | 1990-11-30 | Electric joining method of ceramics |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3060536B2 (en) |
-
1990
- 1990-11-30 JP JP2340864A patent/JP3060536B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH04209765A (en) | 1992-07-31 |
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