JP3026305B2 - Heat treatment method - Google Patents
Heat treatment methodInfo
- Publication number
- JP3026305B2 JP3026305B2 JP24979590A JP24979590A JP3026305B2 JP 3026305 B2 JP3026305 B2 JP 3026305B2 JP 24979590 A JP24979590 A JP 24979590A JP 24979590 A JP24979590 A JP 24979590A JP 3026305 B2 JP3026305 B2 JP 3026305B2
- Authority
- JP
- Japan
- Prior art keywords
- heating plate
- processed
- heat treatment
- airflow
- semiconductor wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Description
【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION
本発明は、加熱処理方法に関するものである。 The present invention relates to a heat treatment method.
半導体ウエハの製造工程におけるレジスト塗布方法に
は、一般に、スピンコーテイング方式が多く採用されて
いる。この方式は、スピンカップ内の中央にスピンチャ
ックを回転可能に設け、このスピンチャック上に設けら
れたウエハ上にウエハと対向した位置に配置したノズル
よりレジストを滴下し、回転されるスピンチャックの遠
心力によりウエハ上に塗布膜を形成する方式である。 そして、このレジスト塗布工程の後に、ウオーキング
ビーム等の搬送装置によりウエハをベーキング工程に搬
入して、露光前に加熱処理を施してレジスト中の溶媒を
除去するようにしている。 また、露光及び現像工程の前後にも、ポストエクスポ
ロジャーベークやポストベーク工程を経る加熱処理を行
なっている。In general, a spin coating method is often used as a resist coating method in a semiconductor wafer manufacturing process. In this method, a spin chuck is rotatably provided in the center of a spin cup, a resist is dropped onto a wafer provided on the spin chuck from a nozzle arranged at a position facing the wafer, and the spin chuck is rotated. In this method, a coating film is formed on a wafer by centrifugal force. After the resist coating step, the wafer is carried into a baking step by a conveying device such as a walking beam, and a heating process is performed before exposure to remove the solvent in the resist. Further, before and after the exposure and development steps, a heat treatment through a post-exposure bake or post-bake step is performed.
しかしながら、上記の従来例によると、第２図に示す
ように、塗布或は現像工程の前後に実行されるベーキン
グ工程において、平坦な加熱板１上に載置ピン３を介し
て微小のギャップ５を持って載置させた半導体ウエハ２
を加熱処理する際に、加熱板１とカバー４との間隙より
ダウンフローや排気の影響で加熱板１の上面より矢印の
ように層流状態で空気が流れるとき、同図の矢印に示す
ように、半導体ウエハ２の下面を空気が流れ、そのた
め、ウエハ２の下面中の雰囲気空気が乱れて伝熱体であ
るこの雰囲気空気が揺らぎ、その結果、空気層の温度分
布がばらつき、例えば0.2℃の温度分布のばらつきがあ
ると、そのばらつきに基づき膜厚は、10Å程度不均一な
膜厚が形成されることが確認された。また、現像工程に
おいても、上記と同様に温度分布のばらつきがあり、そ
のため、現像工程が不均一になる等の課題を有してい
た。 本発明は、上記した従来の課題を解決するために開発
したもので、被処理体を加熱処理する際に、被処理体を
加熱する温度を均一にすることにより膜厚の均一性或は
現像など処理の均一性の向上を図ることを目的としたも
のである。However, according to the above conventional example, as shown in FIG. 2, in a baking process performed before or after the coating or developing process, the minute gap 5 is placed on the flat heating plate 1 via the mounting pin 3. Semiconductor wafer 2 placed with
When the air is heated in a laminar flow state as shown by an arrow from the upper surface of the heating plate 1 due to the downflow or the exhaust from the gap between the heating plate 1 and the cover 4 as shown by the arrow in FIG. In the meantime, air flows on the lower surface of the semiconductor wafer 2, so that the atmospheric air in the lower surface of the wafer 2 is disturbed, and this atmospheric air as a heat transfer body fluctuates. As a result, the temperature distribution of the air layer varies, for example, 0.2 ° C. It was confirmed that when there was a variation in the temperature distribution, the film thickness was formed to be non-uniform by about 10 ° based on the variation. Also, in the development process, there is a variation in the temperature distribution in the same manner as described above, and therefore, there is a problem that the development process becomes non-uniform. The present invention has been developed in order to solve the above-mentioned conventional problems. When the object to be processed is subjected to the heat treatment, the temperature for heating the object to be treated is made uniform so that the uniformity of the film thickness or the development is achieved. It is intended to improve the uniformity of the processing.
上記の目的を達成するため、本発明は、加熱板に被処
理体を浮かせた状態で配置し、かつ、被処理体を加熱板
の平面と側面とで加熱すると共に加熱板の側面方向の上
面と被処理体の上面とを同一面に設定した状態におい
て、前記加熱板の側面方向上面から被処理体の上面に沿
って一方向から他方向に気流を通過させながら被処理体
を加熱処理するようにした。 この場合、クリーンルーム内でのダウンフローの気流
やオーブン内の雰囲気ガスを排気するための気流が被処
理体と加熱板との間に与える影響を少なくし、加熱板の
側面方向上面から被処理体の上面に沿って一方向から他
方向へ気流を通過させるようにするのが好ましい。In order to achieve the above object, the present invention provides a method in which an object to be processed is placed in a state of being floated on a heating plate, and the object to be processed is heated by a flat surface and a side surface of the heating plate, and an upper surface in a side direction of the heating plate. And the upper surface of the object to be processed are set to be the same surface, and the object to be processed is heat-treated while passing an airflow from one direction to the other direction along the upper surface of the object from the side surface upper surface of the heating plate. I did it. In this case, the influence of the downflow airflow in the clean room or the airflow for exhausting the atmospheric gas in the oven between the object to be processed and the heating plate is reduced, and the object to be processed is It is preferable to allow the airflow to pass from one direction to the other along the upper surface of the airbag.
本発明は、上述のように、被加熱体周縁部に位置する
加熱板の上面位置より被処理体の下面を下方に位置させ
て熱処理するように構成したから、クリーンルーム内で
のダウンフローや装置内の雰囲気ガスを排気するための
排気機構により空気が加熱板の上面に沿って層流状態に
流れ、この時、空気の流れは、被処理体の下面を通過す
ることなく加熱板の上面に沿って流れるので、加熱板と
被処理体とのギャップ間の雰囲気にある空気が加熱温度
の伝熱体としての機能を有効に発揮して被処理体を有効
に加熱できる。そのため、塗布工程における膜厚は、高
精度に均一化されると共に、例えば現像工程においても
現像の均一化を図ることができる。As described above, the present invention is configured such that the lower surface of the object to be processed is positioned below the upper surface position of the heating plate located at the peripheral portion of the object to be heated, and the heat treatment is performed. Air flows in a laminar flow state along the upper surface of the heating plate by an exhaust mechanism for exhausting the atmosphere gas in the inside, and at this time, the air flows on the upper surface of the heating plate without passing through the lower surface of the object to be processed. Since the air flows along the gap, the air in the atmosphere between the gap between the heating plate and the object to be processed effectively exerts a function as a heat transfer body at a heating temperature, and the object to be processed can be effectively heated. Therefore, the film thickness in the coating step can be made uniform with high precision, and the development can be made uniform in the developing step, for example.
以下に、本発明における加熱処理方法をレジスト塗布
或は現像工程後の溶剤を乾燥させるためのベーキング装
置に適用した一実施例を第１図を用いて説明する。 図面において、ホットプレートオーブン17には、予め
設定された温度制御される如く加熱手段、例えばヒータ
（図示せず）を内蔵した円板状加熱板11を配設し、この
加熱板11は上面（加熱面）11aに、例えば被処理体であ
る半導体ウエハの形状より多少大きい凹状溝部16（例え
ば2mmの深さ）を形成し、この溝部16内に設けた少なく
とも３個の載置ピン13により形成した平面に半導体ウエ
ハ12を載置して半導体ウエハ12の下面12aと溝部16平面
との間にギャップ15（プロキシミティギャップ）を、例
えば0.5mm有している。このギャップ15を形成する手段
は、ウエハ周縁部に設けてもよい。従って、本例による
と、半導体ウエハ12の下面12aは勿論のこと上面12bも加
熱板11の上面11aより下方に位置しているが、少なくと
も半導体ウエハ12の下面12aが加熱板11の側部上面11aよ
り下方に位置していることが必要である。 更に、加熱板11の上方にはカバー14を設け、このカバ
ー14には、ウエハ搬入口14aを設け、加熱板11の近傍位
置には、雰囲気ガスを排気する排気管18を設けている。 なお、上記の例は塗布、現像工程におけるベーキング
の場合について説明したが、これに限定されることな
く、CVD等のような加熱処理を行なう場合の工程におい
ても適用することが可能であり、これらの場合において
も温度分布のばらつきが生じることなく好適である。 次に、上記実施例の作用を説明する。 半導体ウエハ12を前工程より例えば、塗布、現像工程
に搬入し、加熱板11の凹状溝部16内の載置ピン13上に載
置されると、半導体ウエハ12の下面12aは、加熱板11の
上面11aより下方に位置しているので、クリーンルーム
内でのダウンフローやオーブン17内の雰囲気ガスを排気
管18を介して排気した場合に、第１図の矢印の状態に空
気が加熱板11の上面11aに沿って層流状態で流れ、この
時、空気の流れは、半導体ウエハ12の下面を通過するこ
となく加熱板11の上面11aに沿って流れるので、加熱板1
1と半導体ウエハ12とのギャップ15間の雰囲気にある空
気が影響を受けることなく加熱温度の伝熱体としての機
能を有効に発揮して半導体ウエハ12を加熱するため、塗
布工程におけるレジストの膜厚は高精度に均一化される
と共に、現像工程においても現像の均一化を図ることが
できる。 上記実施例において、雰囲気ガス流によりウエハ下面
より上位に位置する加熱板の周辺部表面が比較的定温に
なる場合には、この表面上に基板、例えば絶縁体、半導
体などを載置又は間隙を設けて配置してもよい。An embodiment in which the heat treatment method of the present invention is applied to a baking apparatus for drying a solvent after a resist coating or developing step will be described below with reference to FIG. In the drawing, a hot plate oven 17 is provided with a heating means such as a disk-shaped heating plate 11 having a built-in heater (not shown) so as to be controlled at a preset temperature, and the heating plate 11 has an upper surface ( For example, a recessed groove 16 (for example, a depth of 2 mm) slightly larger than the shape of the semiconductor wafer to be processed is formed on the heating surface 11a, and formed by at least three mounting pins 13 provided in the groove 16. The semiconductor wafer 12 is placed on the flat surface, and a gap 15 (proximity gap) between the lower surface 12a of the semiconductor wafer 12 and the flat surface of the groove 16 is, for example, 0.5 mm. The means for forming the gap 15 may be provided at the periphery of the wafer. Therefore, according to this example, not only the lower surface 12a but also the upper surface 12b of the semiconductor wafer 12 is located below the upper surface 11a of the heating plate 11, but at least the lower surface 12a of the semiconductor wafer 12 is located on the side upper surface of the heating plate 11. It must be located below 11a. Further, a cover 14 is provided above the heating plate 11. The cover 14 is provided with a wafer carrying-in port 14 a, and an exhaust pipe 18 for exhausting an atmospheric gas is provided near the heating plate 11. Although the above example describes the case of baking in the coating and developing steps, the present invention is not limited to this, and can be applied to a step of performing a heat treatment such as CVD. Also in the case of (1), it is preferable that the temperature distribution does not vary. Next, the operation of the above embodiment will be described. For example, when the semiconductor wafer 12 is loaded into the coating and developing process from the previous process and is placed on the mounting pins 13 in the concave grooves 16 of the heating plate 11, the lower surface 12a of the semiconductor wafer 12 Since it is located below the upper surface 11a, when the down flow in the clean room or the atmospheric gas in the oven 17 is exhausted through the exhaust pipe 18, the air is The air flows in a laminar state along the upper surface 11a, and at this time, the air flows along the upper surface 11a of the heating plate 11 without passing through the lower surface of the semiconductor wafer 12, so that the heating plate 1
The air in the atmosphere between the gap 15 between the semiconductor wafer 12 and the semiconductor wafer 12 effectively functions as a heat transfer body at a heating temperature without being affected, and heats the semiconductor wafer 12. The thickness can be made uniform with high precision, and the development can be made uniform in the developing step. In the above embodiment, when the peripheral surface of the heating plate positioned higher than the lower surface of the wafer becomes relatively constant temperature due to the flow of the atmosphere gas, the substrate, for example, an insulator, a semiconductor, or the like is placed on this surface or the gap is formed. It may be provided and arranged.
以上のことから明らかなように、本発明によると、次
のような有用な効果がある。 被処理体を加熱処理する際に、被処理体を加熱する温
度分布を均一にすることができるので、膜厚の均一性或
は現像の均一性を著しく向上させることができる等の効
果がある。 また、空気の流れは、被処理体の下面を通過すること
なく、加熱板の上面に沿って流れるので、加熱板と被処
理体との間の雰囲気にある空気が影響を受けることな
く、高精度な加熱処理を行なうことができる。As is clear from the above, the present invention has the following useful effects. When the object to be processed is heat-treated, the temperature distribution for heating the object to be processed can be made uniform, so that the uniformity of the film thickness or the uniformity of the development can be remarkably improved. . In addition, since the flow of air flows along the upper surface of the heating plate without passing through the lower surface of the object, the air in the atmosphere between the heating plate and the object is not affected, Accurate heat treatment can be performed.
第１図は、本発明における加熱処理装置の一実施例を示
した説明図であり、第２図は、従来例を示した説明図で
ある。 11……加熱板、11a……加熱板上面 15……ギャップ、16……凹状溝部FIG. 1 is an explanatory view showing one embodiment of a heat treatment apparatus according to the present invention, and FIG. 2 is an explanatory view showing a conventional example. 11 ... heating plate, 11a ... top surface of heating plate 15 ... gap, 16 ... concave groove
Claims (2)
し、かつ、被処理体を加熱板の平面と側面とで加熱する
と共に加熱体の側面方向の上面と被処理体の上面とを同
一面に設定した状態において、前記加熱板の側面方向上
面から被処理体の上面に沿って一方向から他方向に気流
を通過させながら被処理体を加熱処理するようにしたこ
とを特徴とする加熱処理方法。An object to be processed is placed in a state of being floated on a heating plate, and the object to be processed is heated by a flat surface and a side surface of the heating plate. In the state that is set to the same surface, the object to be processed is subjected to heat treatment while passing airflow from one direction to the other direction along the upper surface of the object from the side surface upper surface of the heating plate from the upper side. Heat treatment method.
やオーブン内の雰囲気ガスを排気するための気流が被処
理体と加熱板との間に与える影響を少なくして、加熱板
の側面方向上面から被処理体の上面に沿って一方向から
他方向へ気流を通過させるようにした請求項１記載の加
熱処理方法。2. The method according to claim 1, wherein an influence of a downflow airflow in the clean room or an airflow for exhausting atmospheric gas in the oven between the object to be processed and the heating plate is reduced. The heat treatment method according to claim 1, wherein an airflow is passed from one direction to another direction along the upper surface of the object.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24979590A JP3026305B2 (en) | 1990-09-19 | 1990-09-19 | Heat treatment method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24979590A JP3026305B2 (en) | 1990-09-19 | 1990-09-19 | Heat treatment method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04127516A JPH04127516A (en) | 1992-04-28 |
| JP3026305B2 true JP3026305B2 (en) | 2000-03-27 |
Family
ID=17198334
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP24979590A Expired - Fee Related JP3026305B2 (en) | 1990-09-19 | 1990-09-19 | Heat treatment method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3026305B2 (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6087632A (en) * | 1999-01-11 | 2000-07-11 | Tokyo Electron Limited | Heat processing device with hot plate and associated reflector |
| JP3589929B2 (en) * | 2000-02-22 | 2004-11-17 | 東京エレクトロン株式会社 | Heat treatment equipment |
| JP2005123651A (en) * | 2000-12-26 | 2005-05-12 | Toshiba Corp | Resist film processing apparatus and method of forming resist pattern |
-
1990
- 1990-09-19 JP JP24979590A patent/JP3026305B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH04127516A (en) | 1992-04-28 |
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| Date | Code | Title | Description |
|---|---|---|---|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
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| LAPS | Cancellation because of no payment of annual fees |