JP3011123B2 - Dielectric ceramic composition - Google Patents
Dielectric ceramic compositionInfo
- Publication number
- JP3011123B2 JP3011123B2 JP9052441A JP5244197A JP3011123B2 JP 3011123 B2 JP3011123 B2 JP 3011123B2 JP 9052441 A JP9052441 A JP 9052441A JP 5244197 A JP5244197 A JP 5244197A JP 3011123 B2 JP3011123 B2 JP 3011123B2
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- Prior art keywords
- dielectric ceramic
- ceramic composition
- dielectric
- sintering
- temperature
- Prior art date
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- Control Of Motors That Do Not Use Commutators (AREA)
- Compositions Of Oxide Ceramics (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Inorganic Insulating Materials (AREA)
Description
【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION
【０００１】[0001]
【発明の属する技術分野】本発明はマイクロ波用誘電体
セラミック組成物に関し、より詳しくは、例えば、マイ
クロ波帯域で作動する誘電体共振器のようなマイクロ波
デバイス用誘電体セラミック組成物に関する。The present invention relates to a dielectric ceramic composition for microwaves, and more particularly, to a dielectric ceramic composition for a microwave device such as a dielectric resonator operating in a microwave band.
【０００２】[0002]
【従来の技術】最近、移動通信や衛生放送などの情報通
信機器の利用拡大によってマイクロ波を用いる誘電体セ
ラミック素子に対する関心が高調している。特に、移動
通信媒体としては自動車電話、無線電話、フェーザ、Ｇ
ＰＳ(Global PositioningSystem)などを挙げることがで
きるが、マイクロ波用誘電体セラミックはこれらのシス
テムで誘電体共振器として用いられる。誘電体共振器を
マイクロ波領域で使用するためにはデバイスの小型化を
図る高誘電率、高Ｑ値、低共振周波数温度係数などと共
に焼結特性に優れていなければならない。2. Description of the Related Art In recent years, interest in dielectric ceramic elements using microwaves has increased due to the expansion of use of information communication equipment such as mobile communication and satellite broadcasting. In particular, mobile communication media include car phones, wireless phones, phasors, G
PS (Global Positioning System) and the like can be mentioned, and dielectric ceramics for microwaves are used as dielectric resonators in these systems. In order to use a dielectric resonator in the microwave region, it must be excellent in sintering characteristics as well as a high dielectric constant, a high Q value, a low resonance frequency temperature coefficient, etc. for miniaturizing the device.
【０００３】このような特性を満足させる誘電体セラミ
ック組成物に対する研究はＴｉＯ2に対して最初始まっ
て以来、多くのＴｉＯ2系に対して行われた。その結
果、現在用いられているマイクロ波誘電体組成はＢａ2
Ｔｉ9Ｏ20、（Ｚｒ、Ｓｎ）ＴｉＯ4、ＢａＯ-Ｒｅ2Ｏ3-
ＴｉＯ2（Ｒｅ：Rare earth)、ＢａＯ-Ｎｄ2Ｏ3-ＴｉＯ
2 System（ＢＮＴ系）などの多くのＴｉＯ2系であり、
一方、最近は Ｂａ（Ｍｇ1/3Ｔａ2/3）Ｏ3、Ｂａ（Ｚｎ1/3Ｔａ2/3）
Ｏ3、 Ｂａ（Ｍｇ1/3Ｎｂ2/3）Ｏ3、Ｓｒ（Ｍｇ1/3Ｔａ2/3）
Ｏ3、 Ｓｒ（Ｚｎ1/3Ｔａ2/3）Ｏ3などの複合ペロブスカイト
構造を有する誘電体がたくさん発見されており、且つ２
種類のペロブスカイトの固溶体を用いて新しい誘電体材
料を開発しようとする試みが行われている。[0003] Since the first began in research is TiO 2 with respect to the dielectric ceramic composition which satisfies such properties, was made to a number of TiO 2 system. As a result, the microwave dielectric composition currently used is Ba 2
Ti 9 O 20 , (Zr, Sn) TiO 4 , BaO—Re 2 O 3 −
TiO 2 (Re: Rare earth), BaO-Nd 2 O 3 -TiO
Many TiO 2 systems such as 2 System (BNT system)
On the other hand, recently, Ba (Mg 1/3 Ta 2/3 ) O 3 and Ba (Zn 1/3 Ta 2/3 )
O 3 , Ba (Mg 1/3 Nb 2/3 ) O 3 , Sr (Mg 1/3 Ta 2/3 )
Many dielectrics having a complex perovskite structure, such as O 3 and Sr (Zn 1/3 Ta 2/3 ) O 3 , have been discovered.
Attempts have been made to develop new dielectric materials using solid solutions of different types of perovskites.
【０００４】しかし、ＢＮＴ系は他のマイクロ波用誘電
体に比べてＱ値(Quality-factor、Ｑ×ｆ）が2000（１Ｇ
Ｈｚ）程度に小さいという短所があり、且つ共振周波数
が１ＧＨｚ以下に制限されるという問題点がある。そし
て、Ｎｄ2Ｏ3は希土類金属であって、他の元素に比べて
高価な元素である。However, the BNT type has a Q value (Quality-factor, Q × f) of 2000 (1 G) as compared with other microwave dielectrics.
Hz), and the resonance frequency is limited to 1 GHz or less. Nd 2 O 3 is a rare earth metal, and is an expensive element compared to other elements.
【０００５】一方、（Ｚｒ、Ｓｎ）ＴｉＯ4系は高いＱ
値と安定な温度特性によって一番広く常用化された材料
であって、誘電率の範囲は３０〜４０であり、Ｑ値は４
ＧＨｚで8000程度であり、共振周波数温度係数（τｆ）
の範囲は−３０〜＋３０ppm／℃である。しかし、この
系は一般的な固相反応を経て製造される場合、仮焼温度
が1100℃以上であり、焼結調剤の添加無しでは1600℃以
下で焼結し難い難焼結性物質として知られている。従っ
て、焼結温度を低くするためにＣｕＯ、Ｃｏ2Ｏ3、Ｚｎ
Ｏなどの焼結調剤を使用するが、焼結調剤の添加が組成
物自体の物性を低下させることが知られている。このた
め、一番経済的な固相法に代えて、Ｓｏｌ−Ｇｅｌまた
はアルコキシド法や共沈法などのような液相法を用いた
粉末合成が試みられている。しかし、このような方法は
工程が複雑であるばかりでなく、製造コストの上昇を招
くという問題点がある。On the other hand, the (Zr, Sn) TiO 4 system has a high Q
It is the most widely used material due to its value and stable temperature characteristics. The dielectric constant ranges from 30 to 40 and the Q value is 4
It is about 8000 at GHz and the resonance frequency temperature coefficient (τf)
Ranges from -30 to +30 ppm / ° C. However, when this system is manufactured through a general solid-state reaction, the calcination temperature is 1100 ° C or higher, and it is known as a hardly sinterable substance that is difficult to sinter at 1600 ° C or lower without the addition of a sintering preparation. Have been. Therefore, in order to lower the sintering temperature, CuO, Co 2 O 3 , Zn
Although a sintering preparation such as O is used, it is known that the addition of the sintering preparation lowers the physical properties of the composition itself. Therefore, instead of the most economical solid phase method, powder synthesis using a liquid phase method such as Sol-Gel or alkoxide method or coprecipitation method has been attempted. However, such a method has problems that not only the steps are complicated, but also the production cost is increased.
【０００６】[0006]
【発明が解決しようとする課題】Ｂａ（Ｚｎ1/3Ｔ
ａ2/3）Ｏ3で代表される複合ペロブスカイト系誘電体も
やはり焼結温度が1550℃を越える難焼結性物質であって
焼結が難しいという短所を有しており、よって、焼結温
度を低くするために添加される元素や化合物（ＢaＺｒ
Ｏ3、Ｍｎなど）まで勘案すると、６〜８種類以上の成
分が含まれるので、工程因子を制御し難いという問題点
を抱えている。SUMMARY OF THE INVENTION Ba (Zn 1/3 T
a 2/3 ) Composite perovskite-based dielectrics represented by O 3 are also difficult to sinter because they are difficult-to-sinter materials having a sintering temperature exceeding 1550 ° C. Elements or compounds added to lower the temperature (BaZr
Taking into account O 3 , Mn, etc., there is a problem that it is difficult to control the process factors because it contains 6 to 8 or more types of components.
【０００７】さらに、最近は電子機器の小型化に伴っ
て、例えば移動通信に用いられる誘電体フィルターなど
の誘電体デバイスを小型化するために素子の積層化が試
みられている。積層化のためには電極との同時焼成が必
要であり、この場合、廉価のＡｇやＣｕ電極を使用する
ためには焼結特性に優れた誘電体が要求される。従っ
て、現在まで開発されたマイクロ波用誘電特性を少なく
ともほとんどそのまま保持しながら焼結特性に優れてお
り且つ簡単な組成を有する、新しい誘電体セラミック組
成物の開発に対する必要性は依然として要求されてい
る。Further, recently, with the miniaturization of electronic equipment, an attempt has been made to stack elements in order to miniaturize a dielectric device such as a dielectric filter used for mobile communication. Simultaneous firing with electrodes is necessary for lamination, and in this case, a dielectric material having excellent sintering characteristics is required to use inexpensive Ag or Cu electrodes. Accordingly, there is still a need for the development of a new dielectric ceramic composition which has excellent sintering characteristics and has a simple composition while maintaining at least the dielectric characteristics for microwaves developed to date at least as it is. .
【０００８】本発明者はこのような点に着眼して、現在
広く常用されているＡＢＯ3形の立方(Cubic)の複合ペロ
ブスカイト構造を有する化合物のＢサイト(site)のイオ
ンからなる２元系材料に対して研究を重ねた結果、誘電
率やＱ値などの誘電特性は複合ペロブスカイト構造の化
合物とほぼ同一の水準を保持しながら、焼結はこれより
低い温度で可能であるという事実を発見して本発明を完
成した。In view of such a point, the present inventor has considered a binary system composed of B site ions of a compound having a complex perovskite structure of the cubic (Cubic) form of ABO 3 which is widely used at present. As a result of repeated research on materials, we found that sintering can be performed at lower temperatures while maintaining dielectric properties such as dielectric constant and Q value at almost the same level as compounds with complex perovskite structure Thus, the present invention has been completed.
【０００９】従って、本発明の目的は、今まで開発され
た誘電体の誘電特性を少なくともそのまま保持しなが
ら、優れた焼結特性と簡単な組成をもって製造工程上の
利点があるマイクロ波誘電体セラミック組成物を提供す
ることにある。Accordingly, an object of the present invention is to provide a microwave dielectric ceramic which has excellent sintering characteristics and a simple composition and has an advantage in a manufacturing process while maintaining at least the dielectric characteristics of a dielectric material developed so far. It is to provide a composition.
【００１０】[0010]
【課題を解決するための手段】上記目的を達成する本発
明のマイクロ波用誘電体セラミック組成物は、一般式
Ｂ′Ｂ″2Ｏ6（Ｂ′はＣｏ、Ｍｎ、Ｎｉの中から選ばれ
た少なくともいずれか一種の金属、Ｂ″はＮｂ、Ｔａの
中から選ばれたいずれか一種の金属）で表わされること
を特徴とする。Microwave dielectric ceramic composition of the present invention to achieve the above object, according to an aspect of the general formula B'B "2 O 6 (B 'is selected Co, Mn, from among Ni In addition, at least one kind of metal, and B ″ is any kind of metal selected from Nb and Ta).
【００１１】また、上記目的を達成する本発明のマイク
ロ波用誘電体セラミック組成物は、Ｂ′Ｎｂ2Ｏ6とＢ′
Ｔａ2Ｏ6（Ｂ′はＣｏ、Ｍｎ、Ｎｉの中から選ばれた少
なくともいずれか一種の金属）が所定のモル比で混合さ
れた固溶体からなることを特徴とする。Further, the dielectric ceramic composition for microwaves of the present invention, which achieves the above object, comprises B′Nb 2 O 6 and B ′
It is characterized by comprising a solid solution in which Ta 2 O 6 (B ′ is at least one metal selected from Co, Mn and Ni ) is mixed at a predetermined molar ratio.
【００１２】[0012]
【発明の実施の形態】以下、本発明の実施の形態につい
て説明するが、本発明はこれに限定されない。DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiments of the present invention will be described below, but the present invention is not limited thereto.
【００１３】誘電体材料を実際に応用するためには、誘
電率εが大きければ大きいほど、そして共振周波数温度
係数が０に近い値を持ちながら正、負（＋、−）で調節
できれば良いと知られている。しかし、大部分の場合、
単一の誘電体セラミック組成物のみでは共振周波数温度
係数が０に近い値を持たないために、これら相互間の固
溶体(Solid solution)を形成することにより、その値を
調節しようとするのが一般的である。In order to actually apply the dielectric material, the larger the permittivity ε is, the better it can be, if the resonance temperature coefficient has a value close to 0, and it can be adjusted in positive and negative (+, −). Are known. But in most cases,
Since the resonance frequency temperature coefficient does not have a value close to 0 with only a single dielectric ceramic composition, it is generally attempted to adjust the value by forming a solid solution between them (Solid solution). It is a target.
【００１４】本発明によるＢ′Ｂ″2Ｏ6誘電体セラミッ
ク組成物もやはり後述の表１及び２から分かるように、
Ｂ′Ｔａ2Ｏ6系の場合には共振周波数温度係数が（＋）
値を有するが、Ｂ′Ｎｂ2Ｏ6系の場合には（−）値を有
すると確認された。従って、Ｂ′Ｎｂ2Ｏ6系とＢ′Ｔａ
2Ｏ6系の誘電体セラミック組成物を適当なモル比で互い
に固溶させて固溶体を形成することにより、共振周波数
温度係数を０に近い値で（＋）（−）によって調節可能
であるという事実を発見した。The B'B " 2 O 6 dielectric ceramic composition according to the present invention also has the following characteristics, as can be seen from Tables 1 and 2 below.
In the case of B'Ta 2 O 6 system, the temperature coefficient of resonance frequency is (+)
It was confirmed that the B′Nb 2 O 6 system had a (−) value. Therefore, B'Nb 2 O 6 system and B'Ta
It is said that the resonance frequency temperature coefficient can be adjusted by (+) (-) at a value close to 0 by forming a solid solution by solid-solving the 2 O 6 -based dielectric ceramic compositions with each other at an appropriate molar ratio. Found the fact.
【００１５】一方、誘電体セラミック組成物の誘電特性
を向上させるか、或いは焼結温度を低くする目的でいろ
んな酸化物を燃焼調剤として添加するのが一般的であ
る。例えば、誘電体組成物の誘電特性を向上させるため
にはＭｎＣＯ3、ＭｇＯ、ＳｒＣＯ3、またはＺｎＯなど
の酸化物を添加し、焼結温度を低くするためにはガラス
やＰｂ、Ｂｉ又はＶ系酸化物のような低融点の物質を添
加して、液相で焼結がなされるようにしている。On the other hand, it is common to add various oxides as combustion modifiers for the purpose of improving the dielectric properties of the dielectric ceramic composition or lowering the sintering temperature. For example, an oxide such as MnCO 3 , MgO, SrCO 3 , or ZnO is added to improve the dielectric properties of the dielectric composition, and glass, Pb, Bi, or V-based is used to lower the sintering temperature. A low-melting substance such as an oxide is added so that sintering is performed in the liquid phase.
【００１６】本発明で添加される酸化物添加剤の適切な
含量は誘電体セラミック組成物の全体重量の0.05〜2.0
重量％であるが、添加剤の含量が0.05重量％未満の場合
には添加剤の添加効果を期待することができなく、2.0
重量％を超過する場合には第２相(Second Phase)の出現
で誘電特性が低下する虞がある。A suitable content of the oxide additive added in the present invention is 0.05 to 2.0% of the total weight of the dielectric ceramic composition.
However, if the content of the additive is less than 0.05% by weight, the effect of adding the additive cannot be expected, and 2.0% by weight.
If the content exceeds the weight percentage, the dielectric properties may be reduced due to the appearance of the second phase.
【００１７】本発明者は前記の様々な燃焼調剤を本発明
の誘電体セラミック組成物に添加して誘電特性の向上及
び焼結温度の低下を図ろうとするものである。The present inventor has attempted to improve the dielectric properties and lower the sintering temperature by adding the various combustion preparations to the dielectric ceramic composition of the present invention.
【００１８】[0018]
【実施例】以下、本発明の実施例を詳細に説明する。Embodiments of the present invention will be described below in detail.
【００１９】（第１実施例） 高純度のＮｂ2Ｏ5またはＴａ2Ｏ5と、Ｂ′Ｏ（Ｂ′＝Ｃ
ｏ、Ｎｉの中のいずれか一種）Ｍｎ3Ｏ4またはＣａＣＯ
3粉末を定量に秤量(Weighing)し、これらを蒸留水でジ
ルコニアボール(ZrＯ2 Ball)を用いて２４時間混合し
た。その後、比重差による分級を抑制するためにスプレ
ーを用いてホットプレート(Hot Plate)上に噴射して急
速乾燥を行った。乾燥された粉末を900〜1050℃の温度
で２時間アルミナ炉で仮焼(Calcination)してＢ′Ｎｂ2
Ｏ6またはＢ′Ｔａ2Ｏ6粉末を合成した。仮焼粉末を粉
砕してジルコニアボール(ZrＯ2 Ball)及び蒸留水と一緒
に２４時間ボールミル(ball mill)した。粉砕粉末を100
℃のオーブンで適切な水分量に乾燥した後、1000Kg/cm2
の圧力で直径１０mm×厚さ約３〜４mmの円周形状に圧縮
加圧成形した。前記試片を1150〜1600℃の温度で２時間
焼結した。仮焼または焼結時の昇温速度は５℃／minで
あり、その後炉冷した。このようにして得た焼結試片の
Ｑ値、共振周波数温度係数（τｆ）、誘電率εを１０Ｇ
Ｈｚでネットワーク分析器（ＨＰ８５１０）を用いてハ
キー−コルマン（Hakki-Coleman)のポストレゾナイト法
(Post resonator method)で測定し、更にＱ値が高い試
片は空洞共振器法(Cavity法)で測定した。(First Embodiment) High purity Nb 2 O 5 or Ta 2 O 5 and B′O (B ′ = C
o, one of Ni ) Mn 3 O 4 or CaCO
The three powders were weighed and weighed (Weighing) and mixed with distilled water using zirconia balls (ZrO 2 Ball) for 24 hours. Thereafter, in order to suppress classification due to a difference in specific gravity, rapid drying was performed by spraying onto a hot plate using a spray. The dried powder is calcined in an alumina furnace at a temperature of 900 to 1050 ° C. for 2 hours to obtain B′Nb 2
O 6 or B′Ta 2 O 6 powder was synthesized. The calcined powder was pulverized and ball milled with zirconia balls (ZrO 2 Ball) and distilled water for 24 hours. 100 ground powder
After drying to an appropriate amount of water in an oven at ℃, 1000Kg / cm 2
Under pressure to form a circular shape having a diameter of 10 mm and a thickness of about 3 to 4 mm. The specimen was sintered at a temperature of 1150-1600 ° C. for 2 hours. The rate of temperature rise during calcination or sintering was 5 ° C./min, followed by furnace cooling. The Q value, the resonance frequency temperature coefficient (τf) and the dielectric constant ε of the sintered specimen thus obtained were 10 G
Hakki-Coleman post-resonite method using a network analyzer (HP8510) in Hz
(Post resonator method), and a sample having a higher Q value was measured by a cavity resonator method.
【００２０】一方、Ｑ値は焼結温度によって異なるの
で、相違した焼結温度でＱ値を繰り返し測定して一番優
秀な値を示す温度を焼結温度とし、誘電率εは焼結温度
による差があまり無いので、一つの焼結温度で測定し
た。On the other hand, since the Q value varies depending on the sintering temperature, the Q value is repeatedly measured at different sintering temperatures, and the temperature showing the best value is defined as the sintering temperature, and the dielectric constant ε depends on the sintering temperature. Since there is not much difference, the measurement was performed at one sintering temperature.
【００２１】以上の結果を表１及び表２に示した。The above results are shown in Tables 1 and 2.
【００２２】[0022]
【表１】 [Table 1]
【００２３】[0023]
【表２】 [Table 2]
【００２４】以上の結果からＢ′Ｎｂ2Ｏ6系の誘電率は
２０〜２５程度と低い。また、複合ペロブスカイトの場
合、焼結温度が1400〜1500℃であるのに比べて、この場
合には1100〜1300℃と一層低い値を示している。From the above results, the dielectric constant of B'Nb 2 O 6 is as low as about 20 to 25 . Further, in the case of the composite perovskite, the sintering temperature is 1400 to 1500 ° C., but in this case, the value is 1100 to 1300 ° C., which is lower.
【００２５】また、Ｂ′Ｔａ2Ｏ6系はＢ′Ｎｂ2Ｏ6系に
比べて焼結温度が高く、Ｑ値がやや小さいが、誘電率が
少し高い。そして、（Ｚｒ、Ｓｎ）ＴｉＯ4の場合には
他の焼結調剤の添加やＳｏｌ-Ｇｅｌなどの複雑な工程
を経た場合の焼結温度なので、（Ｚｒ、Ｓｎ）ＴｉＯ4
を充分代替し得る組成を有する。The B'Ta 2 O 6 system has a higher sintering temperature and a slightly lower Q value than the B'Nb 2 O 6 system, but has a slightly higher dielectric constant . In the case of (Zr, Sn) TiO 4 , since it is the sintering temperature after the addition of other sintering preparations or through a complicated process such as Sol-Gel, (Zr, Sn) TiO 4
Has a composition that can sufficiently substitute for
【００２６】（第２実施例） 第１実施例と同様の方法でＢ′Ｎｂ2Ｏ6系とＢ′Ｔａ2
Ｏ6系の粉末を合成してから、それぞれの仮焼粉末を粉
砕した後、これらを適切なモル比で秤量してジルコニア
ボール（ZrO2 Ball)及び蒸留水と共に２４時間ボールミ
ルした。粉砕粉末を100℃のオーブンで適切な水分量に
乾燥した後、1000Kg/cm2の圧力で直径１０mm×厚さ約３
〜４mmの円周形状に圧縮加圧成形した。前記試片を1200
〜1400℃の温度で２時間焼結した。仮焼または焼結時の
昇温速度は５℃／minであり、その後炉冷した。(Second Embodiment) In the same manner as in the first embodiment, B'Nb 2 O 6 and B'Ta 2
After synthesizing the O 6 -based powder, each calcined powder was pulverized, weighed at an appropriate molar ratio, and ball-milled with zirconia balls (ZrO 2 Ball) and distilled water for 24 hours. After drying the pulverized powder to an appropriate amount of water in an oven at 100 ° C., at a pressure of 1000 kg / cm 2 , the diameter is 10 mm × the thickness is about 3 mm.
It was compression-molded into a circular shape of about 4 mm. 1200
Sintered at a temperature of 11400 ° C. for 2 hours. The rate of temperature rise during calcination or sintering was 5 ° C./min, followed by furnace cooling.
【００２７】このようにして得た焼結試片のＱ値、共振
周波数温度係数（τｆ）、誘電率εを１０ＧＨｚのネッ
トワーク分析器（ＨＰ８５１０）を用いてハキー−コル
マン（Hakki-Coleman)のポストレゾナイト法(Post reso
nator method)で測定し、更にＱ値の高い試片は空洞共
振器法(Cavity法)で測定した。The Q value, the resonance frequency temperature coefficient (τf) and the dielectric constant ε of the sintered sample thus obtained were measured using a network analyzer (HP8510) having a frequency of 10 GHz and a post of Hakki-Coleman was used. Resonite method (Post reso
The sample with a higher Q value was measured by the cavity resonator method (Cavity method).
【００２８】一方、Ｑ値は焼結温度によって異なるの
で、相異した焼結温度でＱ値を繰り返し測定して一番優
秀な値を示す温度を焼結温度として設定し、その範囲は
1250〜1350℃であり、Ｔａ量に応じて焼結温度が増加し
た。On the other hand, since the Q value varies depending on the sintering temperature, the Q value is repeatedly measured at different sintering temperatures, and the temperature showing the best value is set as the sintering temperature.
The temperature was 1250 to 1350 ° C, and the sintering temperature increased according to the amount of Ta.
【００２９】以上の結果を表３に示した。 Table 3 shows the above results .
【００３０】[0030]
【表３】 [Table 3]
【００３１】[0031]
【００３２】[0032]
【００３３】以上の結果からＮｉＮｂＴａ系の固溶体の
場合、共振周波数温度係数が±１０の範囲内に収まるこ
とが分かる。From the above results , it can be seen that in the case of a NiNbTa-based solid solution, the temperature coefficient of resonance frequency falls within the range of ± 10.
【００３４】[0034]
【００３５】[0035]
【００３６】[0036]
【００３７】[0037]
【００３８】[0038]
【００３９】[0039]
【００４０】[0040]
【００４１】[0041]
【発明の効果】本発明による誘電体セラミック組成物
は、複合ペロブスカイト構造の誘電体を始めとした従来
のマイクロ波用誘電体セラミック組成物に比べて、品質
係数（Ｑ値）などの誘電特性はほぼ同一の水準を示しな
がら、比較的低温でも焼結が容易に行われ、そして組成
も簡単であって製造工程上の経済的利点がある。Industrial Applicability The dielectric ceramic composition according to the present invention has better dielectric characteristics such as a quality factor (Q value) than conventional dielectric ceramic compositions for microwaves including a composite perovskite structure dielectric. While exhibiting almost the same level, sintering is easily performed even at a relatively low temperature, and the composition is simple, which has economic advantages in the production process.
フロントページの続き (51)Int.Cl.7 識別記号 ＦＩ Ｈ０１Ｐ 7/10 Ｈ０１Ｐ 7/10 (56)参考文献 特開 平７−114822（ＪＰ，Ａ) 特開 平７−114823（ＪＰ，Ａ) 特開 平７−169330（ＪＰ，Ａ) 特開 昭58−135508（ＪＰ，Ａ) (58)調査した分野(Int.Cl.7，ＤＢ名) C04B 35/00 - 35/22 C04B 35/453 C04B 35/495 - 35/499 Continuation of the front page (51) Int.Cl. 7 identification code FI H01P 7/10 H01P 7/10 (56) References JP-A-7-114822 (JP, A) JP-A-7-114823 (JP, A) JP-A-7-169330 (JP, A) JP-A-58-135508 (JP, A) (58) Fields investigated (Int. Cl. 7 , DB name) C04B 35/00-35/22 C04B 35/453 C04B 35/495-35/499
Claims (6)
Ｎｉの中から選ばれた少なくともいずれか一種の金属、
Ｂ″はＮｂ、Ｔａの中から選ばれたいずれか一種の金
属）で表わされることを特徴とするマイクロ波用誘電体
セラミック組成物。A compound of the general formula B'B " 2 O 6 (B 'is Co, Mn,
At least one kind of metal selected from Ni ,
B "is represented by any one metal selected from Nb and Ta).
2Ｏ5、Ｌａ2Ｏ3、Ｓｂ2Ｏ5、ＷＯ3、ＭｎＣＯ3、Ｍｇ
Ｏ、ＳｒＣＯ3、ＺｎＯ、Ｂｉ2Ｏ3の中から選ばれる少
なくとも一種の添加剤を添加することを特徴とする請求
項１記載のマイクロ波用誘電体セラミック組成物。2. The method according to claim 2, wherein said dielectric ceramic composition comprises CuO, V
2 O 5 , La 2 O 3 , Sb 2 O 5 , WO 3 , MnCO 3 , Mg
O, SrCO 3, ZnO, Bi 2 O at least one is characterized by the addition of additives according to claim 1 microwave dielectric ceramic composition according selected from the three.
成物の全体重量の0.05〜2.0重量％であることを特徴と
する請求項２記載のマイクロ波用誘電体セラミック組成
物。3. The dielectric ceramic composition for microwave according to claim 2, wherein the amount of the additive is 0.05 to 2.0% by weight based on the total weight of the dielectric ceramic composition.
ｏ、Ｍｎ、Ｎｉの中から選ばれた少なくともいずれか一
種の金属）が所定のモル比で混合された固溶体からなる
ことを特徴とするマイクロ波用誘電体セラミック組成
物。4. B'Nb 2 O 6 and B'Ta 2 O 6 (B 'is C
a dielectric ceramic composition for microwaves, comprising a solid solution in which at least one metal selected from o, Mn, and Ni ) is mixed at a predetermined molar ratio.
2Ｏ5、Ｌａ2Ｏ3、Ｓｂ2Ｏ5、ＷＯ3、ＭｎＣＯ3、Ｍｇ
Ｏ、ＳｒＣＯ3、ＺｎＯ、Ｂｉ2Ｏ3の中から選ばれる少
なくとも一種の添加剤を添加することを特徴とする請求
項４記載のマイクロ波用誘電体セラミック組成物。5. The method according to claim 1, wherein the dielectric ceramic composition comprises CuO, V
2 O 5 , La 2 O 3 , Sb 2 O 5 , WO 3 , MnCO 3 , Mg
O, SrCO 3, ZnO, Bi 2 O at least one is characterized by the addition of additives according to claim 4 microwave dielectric ceramic composition according selected from the three.
成物の全体重量の0.05〜2.0重量％であることを特徴と
する請求項５記載のマイクロ波用誘電体セラミック組成
物。6. The dielectric ceramic composition for microwave according to claim 5, wherein the amount of the additive is 0.05 to 2.0% by weight based on the total weight of the dielectric ceramic composition.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9052441A JP3011123B2 (en) | 1996-06-28 | 1997-02-20 | Dielectric ceramic composition |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8-169337 | 1996-06-28 | ||
| JP16933796 | 1996-06-28 | ||
| JP9052441A JP3011123B2 (en) | 1996-06-28 | 1997-02-20 | Dielectric ceramic composition |
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| Publication Number | Publication Date |
|---|---|
| JPH1072258A JPH1072258A (en) | 1998-03-17 |
| JP3011123B2 true JP3011123B2 (en) | 2000-02-21 |
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ID=26393052
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9052441A Expired - Fee Related JP3011123B2 (en) | 1996-06-28 | 1997-02-20 | Dielectric ceramic composition |
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Cited By (1)
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| CN102113141B (en) * | 2009-10-22 | 2013-02-13 | 松下电器产业株式会社 | Thermoelectric conversion material and thermoelectric conversion element |
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|---|---|---|---|---|
| KR100372689B1 (en) * | 2000-06-28 | 2003-02-17 | 삼성전기주식회사 | A method for manufacturing microwave dielectrics |
| US6680269B2 (en) * | 2000-06-29 | 2004-01-20 | The Penn State Research Foundation | Bismuth pyrochlore microwave dielectric materials |
| KR100488769B1 (en) * | 2002-06-26 | 2005-05-12 | 순천향대학교 산학협력단 | Microwave Dielectric Ceramic Compositions |
| CN107382313B (en) * | 2017-06-02 | 2020-06-12 | 中国科学院上海硅酸盐研究所 | Microwave dielectric ceramic with ultrahigh quality factor, medium-low dielectric constant and near-zero temperature coefficient and preparation method thereof |
| CN112851346B (en) * | 2021-02-25 | 2023-05-26 | 电子科技大学 | Ultralow-loss zirconium magnesium niobate system microwave dielectric ceramic material and preparation method thereof |
| CN113072373A (en) * | 2021-04-12 | 2021-07-06 | 合肥工业大学 | Temperature-stable low-dielectric ceramic material suitable for 5G millimeter wave communication application and preparation method thereof |
| CN116789448B (en) * | 2022-03-14 | 2024-05-10 | 中国科学院上海硅酸盐研究所 | Medium-temperature sintering high-Q-value microwave dielectric material and preparation method and application thereof |
| CN114751734B (en) * | 2022-04-29 | 2023-07-28 | 电子科技大学 | Dielectric material for low-temperature sintered Mg-Ti-Nb multilayer ceramic capacitor and preparation method thereof |
| CN116477947A (en) * | 2023-05-18 | 2023-07-25 | 韶关学院 | Method for improving dielectric property of copper tantalate ceramic material |
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1997
- 1997-02-20 JP JP9052441A patent/JP3011123B2/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102113141B (en) * | 2009-10-22 | 2013-02-13 | 松下电器产业株式会社 | Thermoelectric conversion material and thermoelectric conversion element |
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|---|---|
| JPH1072258A (en) | 1998-03-17 |
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