JP2990670B2 - Gas inlet pipe for vertical semiconductor heat treatment furnace - Google Patents
Gas inlet pipe for vertical semiconductor heat treatment furnaceInfo
- Publication number
- JP2990670B2 JP2990670B2 JP2110182A JP11018290A JP2990670B2 JP 2990670 B2 JP2990670 B2 JP 2990670B2 JP 2110182 A JP2110182 A JP 2110182A JP 11018290 A JP11018290 A JP 11018290A JP 2990670 B2 JP2990670 B2 JP 2990670B2
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- JP
- Japan
- Prior art keywords
- furnace
- heat treatment
- gas
- tube
- pipe
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Description
【発明の詳細な説明】 産業上の利用分野 この発明は、半導体の熱処理工程に用いる縦型半導体
熱処理炉に処理ガスを導入するガス導入管に関するもの
である。Description: BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a gas introduction pipe for introducing a processing gas into a vertical semiconductor heat treatment furnace used in a semiconductor heat treatment step.
従来の技術 従来、半導体の熱処理工程、例えば酸化、拡散、アニ
ール等の熱処理工程用に縦型半導体熱処理炉が開発され
ていた。縦型半導体熱処理炉の特徴としては、温度分布
が横型炉に比べて均一なこと、ガスの流れが横型炉より
も良好でウエハ中の膜厚分布精度が向上すること、Siウ
エハが大口径化するに連れて横型炉での処理が困難であ
ること等を挙げることができる。2. Description of the Related Art Conventionally, vertical semiconductor heat treatment furnaces have been developed for heat treatment steps of semiconductors, for example, heat treatment steps such as oxidation, diffusion, and annealing. The characteristics of the vertical semiconductor heat treatment furnace are that the temperature distribution is more uniform than in the horizontal furnace, the gas flow is better than in the horizontal furnace, the accuracy of film thickness distribution in the wafer is improved, and the diameter of the Si wafer is larger. And the difficulty in processing in a horizontal furnace.
縦型半導体熱処理炉に使用されるライナーチューブと
しては、当初は石英ガラス製のものが主流であったが、
石英ガラスはヒータの輻射熱をそのまま通過させること
から、均熱管としてのSiCチューブの有効性が見直され
つつある。また、SiCチューブは高温状態のヒータから
排出される金属蒸気(Na,Fe,Cu,Al等)が炉芯管を通過
して処理空間を汚染することを防止する効果も持つ。The liner tubes used in vertical semiconductor heat treatment furnaces were initially made of quartz glass,
Since quartz glass allows the radiant heat of the heater to pass through, the effectiveness of the SiC tube as a soaking tube is being reviewed. The SiC tube also has an effect of preventing metal vapor (Na, Fe, Cu, Al, etc.) discharged from the heater in a high temperature state from passing through the furnace core tube and contaminating the processing space.
しかし、単に均熱管としてSiCチューブを用いただけ
では微量の金属蒸気の侵入は防ぎきれず改善が望まれて
いた。However, simply using a SiC tube as a soaking tube could not prevent the invasion of a small amount of metal vapor, and an improvement was desired.
そこで、本出願人は、従来技術の問題点に鑑みて、特
願平1−165259号明細書において、均熱管と炉芯管の間
に金属の侵入を防止するためのガスを導入でき、しかも
その導入空間内を気密に保つことができる縦型半導体熱
処理炉を提案した。In view of the problems of the prior art, the present applicant has been able to introduce a gas for preventing metal from entering between the soaking tube and the furnace core tube in Japanese Patent Application No. 1-165259, and We have proposed a vertical semiconductor heat treatment furnace that can keep the inside space airtight.
発明が解決しようとする課題 しかし、特願平1−165259号の半導体熱処理炉の炉内
に設ける処理ガス導入管は石英ガラスで作られていたた
め、微量の金属蒸気の侵入を防ぎきれないという欠点が
あった。Problems to be Solved by the Invention However, since the processing gas introduction pipe provided in the furnace of the semiconductor heat treatment furnace of Japanese Patent Application No. 1-165259 is made of quartz glass, it is impossible to prevent a small amount of metal vapor from entering. was there.
本発明は前述のような欠点を解消して、炉内をより高
純度のガス雰囲気に保持できるようにする、縦型半導体
熱処理炉用のガス導入管を提供することを目的としてい
る。SUMMARY OF THE INVENTION It is an object of the present invention to provide a gas inlet pipe for a vertical semiconductor heat treatment furnace, which can solve the above-mentioned drawbacks and can maintain the inside of the furnace at a higher purity gas atmosphere.
課題を解決するための手段 この発明は縦型半導体熱処理の処理空間に処理ガスを
導入するガス導入管であって、少なくとも一つの屈曲部
を有し、かつ内径が5〜20mm、外径が6〜22mmの円管状
である、CVDによるSiC膜のみで形成されたSiC管から成
ることを特徴とする縦型半導体熱処理炉用ガス導入管を
要旨としている。Means for Solving the Problems The present invention is a gas introduction pipe for introducing a processing gas into a processing space for vertical semiconductor heat treatment, which has at least one bent portion, an inner diameter of 5 to 20 mm, and an outer diameter of 6 The gist of the present invention is a gas introduction pipe for a vertical semiconductor heat treatment furnace, which is formed of a SiC pipe formed of only a SiC film formed by CVD and having a circular shape of about 22 mm.
発明の実施の形態 縦型半導体熱処理炉は、例えば、下方に開口した炉芯
管と、その外側に設けたヒータと、ヒータの外側に設け
た断熱体を有する。そして、半導体熱処理炉の処理空間
の底部から頂部まで処理ガス導入管を設ける。導入管の
途中には少なくとも1つの屈曲部(たとえば直角の屈曲
部)を設ける。CVDによるSiC管からなり、かつ、処理空
間に露出した処理ガス導入管部分の長さを800〜1500mm
にし、処理ガス導入管の内径を5〜20mmにし、外径を6
〜22mmにする。BEST MODE FOR CARRYING OUT THE INVENTION A vertical semiconductor heat treatment furnace has, for example, a furnace core tube opened downward, a heater provided outside the furnace core tube, and a heat insulator provided outside the heater. Then, a processing gas introduction pipe is provided from the bottom to the top of the processing space of the semiconductor heat treatment furnace. At least one bent portion (for example, a right-angled bent portion) is provided in the middle of the introduction pipe. The length of the processing gas introduction pipe part consisting of a CVD SiC pipe and exposed to the processing space is 800 to 1500 mm
And the inner diameter of the processing gas introduction pipe is 5 to 20 mm and the outer diameter is 6
To ~ 22mm.
SiCの炉芯管の場合は均熱管を必要としない。石英ガ
ラスの炉芯管の場合には均熱管を設けた方がよい。In the case of a core tube made of SiC, a soaking tube is not required. In the case of a quartz core tube, it is better to provide a soaking tube.
実 施 例 以下、図面を参照して本発明の実施例を説明する。Embodiments Hereinafter, embodiments of the present invention will be described with reference to the drawings.
第1図は縦型半導体熱処理炉10を示す概略図である。
縦型半導体熱処理炉10は全体的に円筒形状の炉芯管12
(反応管又はプロセスチューブとも呼ばれる)を備えて
いる。炉芯管12は下方に開口していて、その開口から半
導体ウエハ9を出し入れする構成になっている。炉芯管
12は石英ガラスで構成してあり、その内部が処理空間8
を形成している。処理空間8にはウエハ保持部材28によ
って多数の半導体ウエハ9が設置してある。FIG. 1 is a schematic view showing a vertical semiconductor heat treatment furnace 10.
The vertical semiconductor heat treatment furnace 10 has an overall cylindrical core 12
(Also called a reaction tube or a process tube). The furnace core tube 12 is open downward, and has a configuration in which the semiconductor wafer 9 is put in and out through the opening. Furnace core tube
Reference numeral 12 is made of quartz glass, and the inside thereof is a processing space 8.
Is formed. A large number of semiconductor wafers 9 are set in the processing space 8 by a wafer holding member 28.
処理空間内にはガス導入管33が設けてあり、所定の処
理用ガスを導入できる構成になっている。第1〜2図の
例においては、ガス導入管33はほぼL字形になってい
て、水平部と垂直部との接合部が屈曲部33aになってい
る。A gas introduction pipe 33 is provided in the processing space, so that a predetermined processing gas can be introduced. In the example shown in FIGS. 1 and 2, the gas introduction pipe 33 is substantially L-shaped, and the joint between the horizontal part and the vertical part is a bent part 33a.
処理ガス排出管34が炉の底部に水平に設けてあり、処
理用のガスを排出する構成になっている。A processing gas discharge pipe 34 is provided horizontally at the bottom of the furnace, and is configured to discharge a processing gas.
処理ガス導入管33は処理空間に露出した部分の長さが
1000〜1300mmである。図示例では、この長さは1100mmに
なっている。The length of the exposed portion of the processing gas introduction pipe 33 in the processing space is
It is 1000-1300mm. In the illustrated example, this length is 1100 mm.
また、処理ガス導入管33の内径と外径は全長にわたっ
てほぼ均一になっており、それぞれ内径は5〜20mmであ
り、外径は6〜22mmである。図示例では、内径は12mmに
なっており、外径は16mmになっている。The inside diameter and the outside diameter of the processing gas introduction pipe 33 are substantially uniform over the entire length, and the inside diameter is 5 to 20 mm and the outside diameter is 6 to 22 mm. In the illustrated example, the inner diameter is 12 mm, and the outer diameter is 16 mm.
さらに、処理ガス導入管33は、CVD(化学蒸着)によ
りSiC膜で形成してある。CVD1回あたりのSiC膜の厚み
は、20〜500μmとし、最高の効果を得るには50〜100μ
mにするのが好ましい。Further, the processing gas introduction pipe 33 is formed of a SiC film by CVD (chemical vapor deposition). The thickness of the SiC film per CVD is 20-500 μm, and 50-100 μm for the best effect
m is preferable.
CVDによるSiC膜の形成法の最適例は焼抜き法である。
たとえば、炭素棒又は管の外面にSiC膜を形成した後に
炭素棒又は管を焼抜き、SiC管を得る。The best example of the method of forming a SiC film by CVD is a baking method.
For example, after forming an SiC film on the outer surface of a carbon rod or tube, the carbon rod or tube is burned out to obtain a SiC tube.
なお、処理ガス導入管33の基材はCVDによるSiC膜の成
形による高純度なSiC管にするのが好ましい。Preferably, the base material of the processing gas introduction pipe 33 is a high-purity SiC pipe formed by forming a SiC film by CVD.
ウエハ保持部材28は複数の遮熱板24を持つ。また、保
持したウエハを鉛直軸を中心に回転させる構成になって
いる。ウエハ保持部材28は炉蓋16に設置してあり、炉蓋
16はベース17に固定している。ベース17の一端にはナッ
ト(図示せず)が固定してある。ナットは送りねじ18と
かみ合っている。送りねじ18が回転するとベース17は鉛
直方向(矢印C)に送られる。このように送りねじ18を
回転することによりウエハの移動を行う。なお、送りね
じは1本、ガイドシャフトが1本設けてあり、第1図で
はガイドシャフト1本は前の送りねじの後ろに位置して
いる。The wafer holding member 28 has a plurality of heat shields 24. Further, the held wafer is rotated about a vertical axis. The wafer holding member 28 is set on the furnace lid 16, and the
16 is fixed to the base 17. A nut (not shown) is fixed to one end of the base 17. The nut engages with the lead screw 18. When the feed screw 18 rotates, the base 17 is fed in a vertical direction (arrow C). The wafer is moved by rotating the feed screw 18 in this manner. One feed screw and one guide shaft are provided, and in FIG. 1, one guide shaft is located behind the front feed screw.
炉芯管12の外側には均熱管11が設けてある。均熱管11
は全体的に円筒形状をしていて、下方に開口している。
均熱管11の上部には先細の湾曲部が設けてあり、いわゆ
るR形状を呈している。この湾曲部は均熱管本体と一体
的に構成してもよいし、蓋として別に製造して嵌合又は
接着してもよい。ガスシール性を考慮した場合には、嵌
合よりは接着型が望ましい。このように均熱管上部をR
形状にすることにより、フラット形状の場合より耐熱衝
撃性を向上できる。また、熱効率も向上できる。A heat equalizing tube 11 is provided outside the furnace core tube 12. Soak tube 11
Has an overall cylindrical shape and is open downward.
The upper part of the heat equalizing tube 11 is provided with a tapered curved portion, and has a so-called R shape. The curved portion may be formed integrally with the heat equalizing tube main body, or may be separately manufactured as a lid and fitted or bonded. In consideration of gas sealing properties, an adhesive type is preferable to a fitting type. Thus, the upper part of the soaking tube is
By making the shape, the thermal shock resistance can be improved more than in the case of the flat shape. Also, the thermal efficiency can be improved.
均熱管11はSiCまたはSi含浸のSiCで構成する。耐酸化
性、ガス透過性等を考慮するとSi含浸のSiCが望まし
い。The soaking tube 11 is made of SiC or SiC impregnated with Si. Considering oxidation resistance and gas permeability, SiC impregnated with Si is preferable.
均熱管11の上部には、排気管20が設けてある。排気管
20の端部にはフランジ21が設けてある。このフランジ21
にテフロン製のOリングを介してガス管(図示せず)を
接続できる。排気管20の外側には多数の冷却フィン22が
設置されている。An exhaust pipe 20 is provided above the heat equalizing pipe 11. Exhaust pipe
At the end of 20, a flange 21 is provided. This flange 21
Can be connected to a gas pipe (not shown) through a Teflon O-ring. A number of cooling fins 22 are provided outside the exhaust pipe 20.
均熱管11の下端部外周部にはステンレス製の架台15が
設けてある。A stainless steel base 15 is provided on the outer periphery of the lower end of the heat equalizing tube 11.
架台15の下にはステンレス製の部材29がネジ止めによ
り設置してある。部材29の上には均熱管11が設置され、
均熱管11と部材29の接触部分にはテフロン製のOリング
30が設けてあり、炉の気密性を高めている。部材29には
ガス導入手段としてガス導入管23が設置してあり、炉芯
管と均熱管の間の空間26にガスを導入する構成になって
いる(矢印A)。この実施例ではガス導入管23が対向す
る2ヶ所に設けてある。ガス導入管23によって導入され
たガス、例えば塩酸ガスを含んだ窒素ガスは均熱管11上
部に設けた排気管20からガス管(図示せず)を通して排
出される(矢印B)。A stainless steel member 29 is installed under the gantry 15 by screwing. A heat equalizing tube 11 is installed on the member 29,
O-ring made of Teflon is used for the contact part between the soaking tube 11 and the member 29
30 are provided to increase the airtightness of the furnace. The member 29 is provided with a gas introduction pipe 23 as a gas introduction means, and is configured to introduce gas into the space 26 between the furnace core tube and the soaking tube (arrow A). In this embodiment, gas introduction pipes 23 are provided at two opposing locations. The gas introduced by the gas introduction pipe 23, for example, a nitrogen gas containing hydrochloric acid gas, is discharged from an exhaust pipe 20 provided above the heat equalizing pipe 11 through a gas pipe (not shown) (arrow B).
部材29と炉蓋16の間には、ステンレス製の部材25が配
置してあり、部材29にネジ止めされている。部材29と部
材25の間、部材25と炉蓋16の間にはテフロン製のOリン
グ31、19が設けてあり、炉の気密性を高めている。A member 25 made of stainless steel is arranged between the member 29 and the furnace lid 16, and is screwed to the member 29. O-rings 31 and 19 made of Teflon are provided between the member 29 and the member 25 and between the member 25 and the furnace lid 16 to improve the airtightness of the furnace.
部材25の上には、炉芯管12が設置され、炉芯管12と部
材25の接触部分にはテフロン製のOリング31が設けてあ
る。炉芯管のみ交換する場合には、部材25を部材29に止
めているネジをとり、炉蓋16とともに下方へ移動させる
ことにより交換できる。The furnace core tube 12 is installed on the member 25, and a Teflon O-ring 31 is provided at a contact portion between the furnace core tube 12 and the member 25. When only the furnace core tube is replaced, the screw can be replaced by removing the screw fixing the member 25 to the member 29 and moving the screw together with the furnace lid 16 downward.
架台15、部材29、部材25、及び炉蓋16は中空にして、
冷却する構造にしてもよい。The gantry 15, the member 29, the member 25, and the furnace lid 16 are hollow,
A cooling structure may be used.
均熱管11の外側にはヒータ13が配置されている。ヒー
タ13の外側には例えば断熱ファイバからなる断熱体14が
形成してある。A heater 13 is arranged outside the soaking tube 11. Outside the heater 13, a heat insulator 14 made of, for example, a heat insulating fiber is formed.
ガス流量は使用する条件によって調節できる。 The gas flow can be adjusted depending on the conditions used.
ガスを流す効果を明らかにするために、塩酸ガスを含
んだ窒素ガスを5/min流し、酸化処理を行った場合と
ガスを何も流さず酸化処理を行った場合のシリコンウエ
ハ酸化膜中のナトリウム、ニッケルの含有量を測定し
た。酸化膜は約1000Å(オングストローム)形成した。
その結果を第1表に示す。In order to clarify the effect of flowing the gas, the nitrogen gas containing hydrochloric acid gas was flowed at 5 / min and the oxidation process was performed, and the oxidation process was performed without flowing any gas. The contents of sodium and nickel were measured. The oxide film was formed at about 1000 Å (angstrom).
Table 1 shows the results.
第1表から、炉芯管と均熱管の間にガスを流すことに
より、金属蒸気の侵入を防ぐことができることが明らか
になった。From Table 1, it has been clarified that the inflow of metal vapor can be prevented by flowing gas between the furnace core tube and the soaking tube.
次に、放熱フィンの効果を明らかにするために、放熱
フィンを有するガス排気管とフィンを持たないガス管に
おけるフランジ端面における温度を測定した。その結果
を第2表に示す。Next, in order to clarify the effect of the radiation fins, the temperatures at the flange end surfaces of the gas exhaust pipe having the radiation fins and the gas pipe having no fins were measured. Table 2 shows the results.
第2表から、フィンを設けることによりガス排気管に
おけるフランジ部の温度を大幅に低下できることが明ら
かになった。Table 2 shows that the provision of the fins can significantly reduce the temperature of the flange portion of the gas exhaust pipe.
発明の効果 本発明によれば、ガス導入管がCVDによるSiC管で構成
されているため、高純度化が達成され、それに伴って、
炉内の処理空間も大幅に高純度化が図れる。Effect of the Invention According to the present invention, since the gas introduction pipe is composed of a SiC pipe formed by CVD, high purification is achieved, and accordingly,
The processing space in the furnace can be significantly purified.
なお、処理炉の処理空間たとえば炉芯管と均熱管の間
に処理ガスを流すと、金属蒸気の侵入を確実に防ぐこと
ができる。When a processing gas is flowed between the processing space of the processing furnace, for example, between the furnace core tube and the heat equalizing tube, intrusion of metal vapor can be surely prevented.
第1図は本発明の実施例を示す概略図、第2図は第1図
に示した炉においてウエハの出入れのために炉蓋やベー
スを下方に移動したところを示す概略図である。 10……縦型半導体熱処理炉 12……炉芯管 11……均熱管 13……ヒータ 14……断熱体 23……ガス導入手段 20……ガス排気管 22……放熱フィンFIG. 1 is a schematic view showing an embodiment of the present invention, and FIG. 2 is a schematic view showing a state where a furnace lid and a base are moved downward for loading and unloading of wafers in the furnace shown in FIG. 10 Vertical furnace heat treatment furnace 12 Furnace core tube 11 Heat equalizing tube 13 Heater 14 Heat insulator 23 Gas introduction means 20 Gas exhaust tube 22 Radiation fin
───────────────────────────────────────────────────── フロントページの続き (72)発明者 関 晃 東京都新宿区西新宿1―26―2 東芝セ ラミックス株式会社内 (56)参考文献 特開 昭54−90966(JP,A) 特開 昭58−84427(JP,A) 実開 平2−35436(JP,U) ──────────────────────────────────────────────────続 き Continued on the front page (72) Inventor Akira Seki 1-26-2 Nishi-Shinjuku, Shinjuku-ku, Tokyo Toshiba Ceramics Co., Ltd. (56) References JP-A-54-90966 (JP, A) JP-A 58-84427 (JP, A) Japanese Utility Model Hei 2-35436 (JP, U)
Claims (1)
導入するガス導入管であって、少なくとも一つの屈曲部
を有し、かつ内径が5〜20mm、外径が6〜22mmの円管状
である、CVDによるSiC膜のみで形成されたSiC管から成
ることを特徴とする縦型半導体熱処理炉用ガス導入管。1. A gas introducing pipe for introducing a processing gas into a processing space of a vertical semiconductor heat treatment, said gas introducing pipe having at least one bent portion, an inner diameter of 5 to 20 mm, and an outer diameter of 6 to 22 mm. A gas introduction pipe for a vertical semiconductor heat treatment furnace, comprising a SiC pipe formed only of a SiC film by CVD.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2110182A JP2990670B2 (en) | 1990-04-27 | 1990-04-27 | Gas inlet pipe for vertical semiconductor heat treatment furnace |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2110182A JP2990670B2 (en) | 1990-04-27 | 1990-04-27 | Gas inlet pipe for vertical semiconductor heat treatment furnace |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH0410531A JPH0410531A (en) | 1992-01-14 |
JP2990670B2 true JP2990670B2 (en) | 1999-12-13 |
Family
ID=14529125
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2110182A Expired - Fee Related JP2990670B2 (en) | 1990-04-27 | 1990-04-27 | Gas inlet pipe for vertical semiconductor heat treatment furnace |
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JP (1) | JP2990670B2 (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2000182967A (en) * | 1998-12-15 | 2000-06-30 | Sony Corp | Method and device for vapor-phase growth |
JP2001274107A (en) | 2000-03-28 | 2001-10-05 | Nec Kyushu Ltd | Diffusion furnace |
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JPS5348130A (en) * | 1976-10-13 | 1978-05-01 | Toyota Motor Corp | Spark condition detecting method and device |
JPS5490966A (en) * | 1977-11-30 | 1979-07-19 | Toshiba Ceramics Co | Siliconncontained silicon carbide reactive tube |
JPS54130876A (en) * | 1978-04-03 | 1979-10-11 | Cho Lsi Gijutsu Kenkyu Kumiai | Method of heating semiconductor |
JPS62272525A (en) * | 1986-05-21 | 1987-11-26 | Hitachi Ltd | Heat treating apparatus |
JPH0235436U (en) * | 1988-08-29 | 1990-03-07 |
-
1990
- 1990-04-27 JP JP2110182A patent/JP2990670B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JPH0410531A (en) | 1992-01-14 |
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