JP2979832B2 - Manufacturing method of low stress metal film - Google Patents
Manufacturing method of low stress metal filmInfo
- Publication number
- JP2979832B2 JP2979832B2 JP4086829A JP8682992A JP2979832B2 JP 2979832 B2 JP2979832 B2 JP 2979832B2 JP 4086829 A JP4086829 A JP 4086829A JP 8682992 A JP8682992 A JP 8682992A JP 2979832 B2 JP2979832 B2 JP 2979832B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- metal film
- stress
- manufacturing
- internal stress
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Landscapes
- Physical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
Description
【０００１】[0001]
【産業上の利用分野】本発明は内部応力が小さく安定な
金属膜の作製方法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for producing a stable metal film having a small internal stress.
【０００２】[0002]
【従来の技術】従来、金属膜は化学気相成長法、スパッ
タリング法及び真空蒸着法によって成膜されており、特
に低応力の金属膜を形成する場合には、スパッタガス圧
を最適化したスパッタリング法が用いられている。2. Description of the Related Art Conventionally, a metal film has been formed by a chemical vapor deposition method, a sputtering method, and a vacuum evaporation method. Method is used.
【０００３】[0003]
【発明が解決しようとする課題】例えばＸ線リソグラフ
ィーに用いられるＸ線マスクの作製においては、内部応
力がおよそ１×１０7 Ｎ／ｍ2 以下の低応力のＸ線吸収
体が必要不可欠である。しかしＴａ膜及びＷ膜の内部応
力は成膜後、大気中で圧縮応力側へ変化し、安定化する
のに数ヵ月もの長い期間が必要になり、製造直後に所望
の寸法精度を確保することができなかった。For example, in the production of an X-ray mask used for X-ray lithography, a low-stress X-ray absorber having an internal stress of about 1 × 10 7 N / m 2 or less is indispensable. . However, the internal stress of the Ta film and the W film changes to the compressive stress side in the atmosphere after the film is formed, and it takes a long period of several months to be stabilized. Could not.
【０００４】[0004]
【課題を解決するための手段】本発明は、スパッタリン
グ法により所定の引張り応力を有する金属膜を成膜後直
ちに酸素中でアニールし、短時間で内部応力の安定化を
図るものである。SUMMARY OF THE INVENTION The present invention aims to stabilize internal stress in a short time by annealing a metal film having a predetermined tensile stress by sputtering in oxygen immediately after the formation.
【０００５】[0005]
【作用】Ｔａ及びＷ等の金属膜の内部応力の変化は膜中
に酸素が拡散することに依って起こる。酸素雰囲気中で
アニールすると酸素の拡散が加速され、短時間で安定な
吸収体を得ることができる。また内部応力の変化量は成
膜条件によって異なるが、内部応力が小さい領域ではほ
ぼ一定の値となる。そこで、アニール後の内部応力がゼ
ロあるいはゼロに近くなるように予め所定の引張り応力
を有する膜を形成しておくことにより、低応力で安定な
金属膜を製造することが可能となる。The change in the internal stress of a metal film such as Ta and W occurs due to the diffusion of oxygen into the film. When annealing is performed in an oxygen atmosphere, diffusion of oxygen is accelerated, and a stable absorber can be obtained in a short time. Further, the amount of change in the internal stress varies depending on the film forming conditions, but is substantially constant in a region where the internal stress is small. Therefore, by forming a film having a predetermined tensile stress in advance so that the internal stress after annealing becomes zero or close to zero, a low stress and stable metal film can be manufactured.
【０００６】[0006]
【実施例】以下に本発明の実施例としてスパッタリング
法による方法を説明する。スパッタリング法で例えばＴ
ａ膜を成膜すると、その内部応力はＡｒガス圧によって
図１の様に変化する。内部応力がゼロになるのは３Ｐａ
付近と６Ｐａ以上の２領域であるが、６Ｐａ以上では低
密度の膜になるためＸ線マスクの構成要素であるＸ線吸
収体パターン等の用途には適さない。高密度で低応力な
Ｔａ膜を得るためには３Ｐａ付近でスパッタガス圧及び
その他のパラメーターを最適化して成膜しなければなら
ない。図２はスパッタガス圧に対する内部応力の変化量
を示している。スパッタガスとしてはＡｒを用い、基板
温度は室温とし、ＲＦパワーは１ｋｗとした。３．５Ｐ
ａ以下ではほぼ一定の値（３×１０7 Ｎ／ｍ2 ）圧縮応
力側へ変化する。そこでスパッタガス圧を２．７Ｐａに
設定して３×１０7 Ｎ／ｍ2 の引張り応力を持つＴａ膜
を成膜し、１００℃の酸素雰囲気中で１時間アニールす
ると内部応力がゼロで安定なＴａが得られる。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A method by a sputtering method will be described below as an embodiment of the present invention. For example, T
When the a film is formed, the internal stress changes as shown in FIG. 1 depending on the Ar gas pressure. The internal stress becomes zero at 3 Pa
There are two regions, namely, the vicinity and 6 Pa or more. However, if the pressure is 6 Pa or more, the film becomes a low-density film. In order to obtain a high-density, low-stress Ta film, it is necessary to optimize the sputtering gas pressure and other parameters at around 3 Pa to form a film. FIG. 2 shows the variation of the internal stress with respect to the sputtering gas pressure. Ar was used as a sputtering gas, the substrate temperature was room temperature, and the RF power was 1 kW. 3.5P
Below a, it changes to a substantially constant value (3 × 10 7 N / m 2 ) to the compressive stress side. Therefore, a Ta film having a tensile stress of 3 × 10 7 N / m 2 is formed by setting the sputtering gas pressure to 2.7 Pa, and annealing is performed for 1 hour in an oxygen atmosphere at 100 ° C., whereby the internal stress is zero and stable. Ta is obtained.
【０００７】[0007]
【発明の効果】以上のように本方法を用いると、低応力
で安定な金属膜を短時間で作製することができる。As described above, by using this method, a stable metal film with low stress can be formed in a short time.
【図１】スパッタリング法によるスパッタガス（Ａｒ）
の圧力とＴａ膜の応力の関係を示す図である。FIG. 1 shows a sputtering gas (Ar) by a sputtering method.
FIG. 4 is a diagram showing a relationship between the pressure of the Ta film and the stress of the Ta film.
【図２】成膜時のスパッタガス（Ａｒ）の圧力とＴａ膜
の内部応力の変化量を示す図である。FIG. 2 is a diagram showing the pressure of a sputter gas (Ar) and the amount of change in the internal stress of a Ta film during film formation.
Claims (1)
力を有する金属膜を成膜し、酸素雰囲気中でアニールし
て低応力とすることを特徴とする低応力金属膜の作製方
法。1. A method for producing a low-stress metal film, comprising: forming a metal film having a predetermined tensile stress by a sputtering method; and annealing the film in an oxygen atmosphere to reduce the stress.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4086829A JP2979832B2 (en) | 1992-04-08 | 1992-04-08 | Manufacturing method of low stress metal film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4086829A JP2979832B2 (en) | 1992-04-08 | 1992-04-08 | Manufacturing method of low stress metal film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH05311414A JPH05311414A (en) | 1993-11-22 |
| JP2979832B2 true JP2979832B2 (en) | 1999-11-15 |
Family
ID=13897707
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4086829A Expired - Lifetime JP2979832B2 (en) | 1992-04-08 | 1992-04-08 | Manufacturing method of low stress metal film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2979832B2 (en) |
-
1992
- 1992-04-08 JP JP4086829A patent/JP2979832B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH05311414A (en) | 1993-11-22 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 19990817 |