JP2970344B2 - Plasma equipment - Google Patents
Plasma equipmentInfo
- Publication number
- JP2970344B2 JP2970344B2 JP26082493A JP26082493A JP2970344B2 JP 2970344 B2 JP2970344 B2 JP 2970344B2 JP 26082493 A JP26082493 A JP 26082493A JP 26082493 A JP26082493 A JP 26082493A JP 2970344 B2 JP2970344 B2 JP 2970344B2
- Authority
- JP
- Japan
- Prior art keywords
- discharge chamber
- plasma
- substrate
- thin film
- voltage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Description
【０００１】[0001]
【産業上の利用分野】本発明は、真空中において基体上
に薄膜を形成するプラズマ装置に関し、特に多層薄膜の
形成に優れたプラズマ装置に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a plasma apparatus for forming a thin film on a substrate in a vacuum, and more particularly to a plasma apparatus excellent in forming a multilayer thin film.
【０００２】[0002]
【従来の技術】近年、真空を利用したプラズマ装置は半
導体分野や記録メディアの分野でそれぞれ高集積化、高
密度化を目的として広く用いられている。これらの装置
では一般に、真空槽内に放電室と基体（基体ホルダに取
り付けられ固定されている場合や基体搬送系の働きで移
動する場合などがある）を有しており、これによりプラ
ズマ化した材料を基体表面に付着させ、薄膜形成や保護
膜形成に利用している。さらに薄膜を多層化しそれぞれ
の層に機能分担させ総合的な薄膜の高性能化を図る取り
組みがなされている。2. Description of the Related Art In recent years, plasma devices using vacuum have been widely used in the fields of semiconductors and recording media for the purpose of high integration and high density, respectively. In general, these devices have a discharge chamber and a substrate (in some cases, fixed to a substrate holder or moved by the function of a substrate transport system) in a vacuum chamber. Materials are attached to the substrate surface and used for forming thin films and protective films. Further, efforts have been made to increase the performance of the overall thin film by multiplying the thin film to share the functions of the respective layers.
【０００３】以下に従来のプラズマ装置について説明す
る。図１はプラズマ装置の概略を示す図である。図１に
おいて、１は基体、２は巻だし軸、３は巻き取り軸、４
は第一の放電室、８は第二の放電室、５、９は陽極、
６、１０は交流電源、７、１１はモノマーガス供給パイ
プ、１２は真空槽、である。[0003] A conventional plasma apparatus will be described below. FIG. 1 is a view schematically showing a plasma apparatus. In FIG. 1, 1 is a base, 2 is a winding shaft, 3 is a winding shaft, 4
Is a first discharge chamber, 8 is a second discharge chamber, 5, 9 are anodes,
Reference numerals 6 and 10 denote an AC power supply, 7 and 11 denote monomer gas supply pipes, and 12 denotes a vacuum tank.
【０００４】以上のように構成されたプラズマ装置につ
いて、以下その動作について説明する。まず、基体１を
巻だし軸２に取り付け巻き取り軸３に巻き回し、真空槽
１２を真空ポンプ（図示せず）で１０-5ｔｏｒｒ程度ま
で排気する。次にモノマーガスを供給パイプ７を通して
第一の放電室４に供給し、交流電源６により陽極５に電
圧を印加して基体１との間にグロー放電を生じさせ放電
室内をプラズマ状態にすることにより、モノマーガスは
基体上に第一の重合膜として堆積する。同様に第二の放
電室８にもモノマーガスを供給パイプ１１を通じ供給し
電圧を印加することにより基体上に第二の重合膜として
堆積する。基体１を巻きだし軸２から巻き取り軸３に順
次巻き取ることにより連続的にそれぞれ機能の異なる薄
膜を多層形成することができる。[0004] The operation of the plasma apparatus configured as described above will be described below. First, the base 1 is attached to the unwinding shaft 2 and wound around the winding shaft 3, and the vacuum chamber 12 is evacuated to about 10 -5 torr by a vacuum pump (not shown). Next, a monomer gas is supplied to the first discharge chamber 4 through the supply pipe 7, and a voltage is applied to the anode 5 by the AC power supply 6 to generate a glow discharge between the first discharge chamber 4 and the substrate 1 to bring the discharge chamber into a plasma state. Thereby, the monomer gas is deposited as a first polymer film on the substrate. Similarly, a monomer gas is supplied to the second discharge chamber 8 through the supply pipe 11 and a voltage is applied to deposit a second polymer film on the substrate. By sequentially winding the substrate 1 from the unwinding shaft 2 to the winding shaft 3, it is possible to continuously form multiple thin films having different functions.
【０００５】[0005]
【発明が解決しようとする課題】しかしながら上記の従
来の構成では、対向電極として導電性の基体１を使用し
ているためにグロー放電電流は基体１を流れアースに落
ち、このときオームの法則により電圧効果が生じ基体１
の放電室に対向する位置の電位がアース電位より上昇す
る。すなわち基体１の電位はアース電位で一定ではなく
第一の放電電流と第二の放電電流によって生じる電圧降
下の合成された交流電位を持っていることになる。つま
り放電室内のプラズマに印加される電圧は陽極印加電圧
と基体の電位の差となり、第一の陽極印加波形と第二の
陽極印加波形の周波数と位相によってビートが生じ、実
際にプラズマに印加される電圧は印加電圧とは大きな違
いを生じる。特に第一と第二の電源の周波数が近い場合
はビートの周期が長くなり実効印加電圧が低くなると放
電が不安定になったり、放電が止まったりして、成膜さ
れた薄膜の特性が劣化したりばらつきを生じるという問
題点を有していた。However, in the above-mentioned conventional structure, since the conductive substrate 1 is used as the counter electrode, the glow discharge current flows through the substrate 1 and drops to the ground. At this time, according to Ohm's law, A voltage effect occurs and the substrate 1
The potential at the position facing the discharge chamber rises above the ground potential. That is, the potential of the base 1 is not constant at the ground potential, but has an AC potential obtained by combining voltage drops generated by the first discharge current and the second discharge current. In other words, the voltage applied to the plasma in the discharge chamber is the difference between the voltage applied to the anode and the potential of the substrate, and a beat is generated by the frequency and phase of the first applied waveform and the second applied waveform, and the beat is actually applied to the plasma. Voltage greatly differs from the applied voltage. In particular, when the frequencies of the first and second power supplies are close to each other, the beat cycle becomes longer, and when the effective applied voltage becomes lower, the discharge becomes unstable or stops, thereby deteriorating the characteristics of the formed thin film. This has the problem of causing dripping and variation.
【０００６】本発明は上記従来の問題点を解決するもの
で、安定で均一な膜を提供するとともに、効率的に多層
薄膜を成膜できるプラズマ装置を提供することを目的と
する。An object of the present invention is to solve the above-mentioned conventional problems and to provide a plasma apparatus capable of providing a stable and uniform film and efficiently forming a multilayer thin film.
【０００７】[0007]
【課題を解決するための手段】この目的を達成するため
に本発明のプラズマ装置は、第一の放電室の陽極に印加
する電源の周波数に対して、第二の放電室の陽極に印加
する電源の周波数は５０Ｈｚ以上異なっている構成を有
している。To achieve this object, a plasma apparatus according to the present invention applies a voltage to the anode of a second discharge chamber with respect to a frequency of a power supply applied to the anode of a first discharge chamber. The frequency of the power supply is different from that of the power supply by 50 Hz or more.
【０００８】[0008]
【作用】この構成によって、第一と第二の電源の周波数
のビート周波数は、５０Ｈｚ以上となり常に安定な放電
が得られる。With this configuration, the beat frequency of the first and second power supplies becomes 50 Hz or more, and a stable discharge is always obtained.
【０００９】[0009]
【実施例】以下本発明の一実施例について、金属磁性薄
膜を真空蒸着法によって形成した磁気テープの保護膜を
プラズマＣＶＤ法によって形成する場合を例にとって説
明する。DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below by taking as an example a case where a protective film of a magnetic tape in which a metal magnetic thin film is formed by a vacuum evaporation method is formed by a plasma CVD method.
【００１０】図２は金属薄膜テープの断面図であり、１
３はポリエステルフィルムなどの高分子フィルムやアル
ミニューム薄膜などの非磁性金属薄膜からなる基板であ
る。１４は強磁性金属薄膜からなる磁気記録層でコバル
ト、ニッケル、鉄またはそれらを主成分とする合金を電
子ビーム蒸着法、スパッタリング法、イオンプレーティ
ング法などの真空蒸着法によって、基板１３の上に形成
されている。１５ａ、１５ｂはプラズマＣＶＤ法によっ
て形成された硬質炭素膜からなる保護膜層で、１６はカ
ルボン酸やフッ素系潤滑剤からなる潤滑剤層、１７はバ
ックコート層でポリウレタンなどの樹脂中にカーボンブ
ラックなどの充填剤を分散させた塗膜からなっている。
保護膜層１５ａ、１５ｂはそれぞれ金属薄膜、潤滑剤と
密着性のよい性質になるよう適宜原料ガスが選択され
る。FIG. 2 is a sectional view of the metal thin film tape.
Reference numeral 3 denotes a substrate made of a polymer film such as a polyester film or a non-magnetic metal thin film such as an aluminum thin film. Numeral 14 denotes a magnetic recording layer composed of a ferromagnetic metal thin film. Cobalt, nickel, iron or an alloy containing these as a main component is formed on the substrate 13 by vacuum evaporation such as electron beam evaporation, sputtering, or ion plating. Is formed. 15a and 15b are protective film layers made of a hard carbon film formed by a plasma CVD method, 16 is a lubricant layer made of a carboxylic acid or a fluorine-based lubricant, 17 is a back coat layer, and carbon black is contained in a resin such as polyurethane. It consists of a coating film in which fillers such as are dispersed.
For the protective film layers 15a and 15b, a raw material gas is appropriately selected so that the protective film layers 15a and 15b have good adhesion to the metal thin film and the lubricant.
【００１１】本実施例では第一の放電室では、メタンガ
スとアルゴンガスを等量放電室に供給し放電室内の真空
度を０．１Ｔｏｒｒに保ち、陽極には交流電圧を実効値
で６５０Ｖ印加して保護膜を約５ｎｍ形成し、さらに第
二の放電室では、メタンガスとアルゴンガスをそれぞれ
３：７の割合で放電室に供給し放電室内の真空度を０．
３Ｔｏｒｒに保ち、陽極には交流電圧を実効値で９００
Ｖ印加して保護膜を約１０ｎｍ形成した。それぞれの電
源の周波数を変えて保護膜を形成し磁気テープを作製し
た。保護膜の出来映えは磁気テープをＶＴＲで繰り返し
走行し、その出力変化を調べ評価した。In this embodiment, in the first discharge chamber, equal amounts of methane gas and argon gas are supplied to the discharge chamber, the degree of vacuum in the discharge chamber is maintained at 0.1 Torr, and an AC voltage of 650 V is applied to the anode as an effective value. In the second discharge chamber, methane gas and argon gas were supplied to the discharge chamber at a ratio of 3: 7, respectively, and the degree of vacuum in the discharge chamber was reduced to 0.
Maintain 3 Torr and apply an AC voltage of 900 to the anode as an effective value.
V was applied to form a protective film of about 10 nm. A protective film was formed by changing the frequency of each power supply to produce a magnetic tape. The quality of the protective film was evaluated by repeatedly running the magnetic tape with a VTR and examining the output change.
【００１２】その結果を（表１）に示す。The results are shown in (Table 1).
【００１３】[0013]
【表１】 [Table 1]
【００１４】繰り返し耐久性は、２３℃１５％の環境で
２００パス繰り返し走行を行い、初期出力と２００パス
後の出力を比較した。試料はそれぞれの実験水準でテー
プ原反の長手方向で５０巻について測定した。Regarding the repetition durability, an initial output and an output after 200 passes were compared by repeatedly running 200 passes in an environment of 23 ° C. and 15%. The samples were measured for 50 rolls in the longitudinal direction of the raw tape at each experimental level.
【００１５】（表１）から明らかなように、本発明によ
って形成された保護膜を有する磁気テープは、繰り返し
走行後の出力低下が少ない値を示している。しかしなが
ら、電源周波数が近い時は、出力低下の大きいものがあ
りばらつきが大きくなっている。As is clear from Table 1, the magnetic tape having the protective film formed according to the present invention shows a value in which the output decrease after repeated running is small. However, when the power supply frequency is near, there is a large output drop, and the variation is large.
【００１６】なお、本実施例ではプラズマに電圧を印加
する電源として交流電源を使用したが公知の直流バイア
スを付加した交流電源でもよい。In this embodiment, an AC power supply is used as a power supply for applying a voltage to the plasma, but an AC power supply to which a known DC bias is added may be used.
【００１７】また本実施例では、金属テープの保護膜用
のプラズマ装置について説明したが導電性の基体を対向
電極とするプラズマ装置においても同様の作用効果を有
するものである。In this embodiment, a plasma device for a protective film of a metal tape has been described. However, a plasma device having a conductive base as a counter electrode has the same effect.
【００１８】[0018]
【発明の効果】以上のように、本発明のプラズマ装置に
よれば、それぞれの放電電圧のビートによるプラズマの
不安定が解消され、安定で均一な膜を提供するととも
に、効率的に多層薄膜を成膜できるものである。As described above, according to the plasma apparatus of the present invention, instability of the plasma due to the beat of each discharge voltage is eliminated, and a stable and uniform film is provided, and a multilayer thin film is efficiently formed. It can form a film.
【図１】本発明のプラズマ装置の概略図FIG. 1 is a schematic diagram of a plasma apparatus of the present invention.
【図２】本発明の実施例で作製した磁気テープの断面図FIG. 2 is a cross-sectional view of a magnetic tape manufactured in an example of the present invention.
１ 基体 ２ 巻きだし軸 ３ 巻き取り軸 ４ 第一の放電室 ８ 第二の放電室 ５、９ 陽極 ６、１０ 交流電源 ７、１１ モノマーガス供給パイプ １２ 真空槽 １３ 基板 １４ 金属磁性薄膜層 １５ａ、１５ｂ 保護膜層 １６ 潤滑剤層 １７ バックコート層 Reference Signs List 1 base 2 unwinding shaft 3 winding shaft 4 first discharge chamber 8 second discharge chamber 5, 9 anode 6, 10 AC power supply 7, 11, monomer gas supply pipe 12 vacuum tank 13 substrate 14 metal magnetic thin film layer 15a, 15b Protective film layer 16 Lubricant layer 17 Back coat layer
Claims (1)
電極として、基本上に薄膜を形成する放電室を複数有す
るプラズマ装置において、各々の放電室に印加する交流
電圧の周波数の差が５０Ｈｚ以上あることを特徴とする
プラズマ装置。In a plasma apparatus having a plurality of discharge chambers on which a thin film is formed on the basis of a conductive substrate moving in a vacuum as a counter electrode, a frequency difference of an AC voltage applied to each discharge chamber is 50 Hz. A plasma device characterized by the above.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26082493A JP2970344B2 (en) | 1993-10-19 | 1993-10-19 | Plasma equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26082493A JP2970344B2 (en) | 1993-10-19 | 1993-10-19 | Plasma equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH07118856A JPH07118856A (en) | 1995-05-09 |
| JP2970344B2 true JP2970344B2 (en) | 1999-11-02 |
Family
ID=17353274
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP26082493A Expired - Lifetime JP2970344B2 (en) | 1993-10-19 | 1993-10-19 | Plasma equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2970344B2 (en) |
-
1993
- 1993-10-19 JP JP26082493A patent/JP2970344B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH07118856A (en) | 1995-05-09 |
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