JP2968062B2 - Semiconductor heat treatment equipment - Google Patents
Semiconductor heat treatment equipmentInfo
- Publication number
- JP2968062B2 JP2968062B2 JP2603891A JP2603891A JP2968062B2 JP 2968062 B2 JP2968062 B2 JP 2968062B2 JP 2603891 A JP2603891 A JP 2603891A JP 2603891 A JP2603891 A JP 2603891A JP 2968062 B2 JP2968062 B2 JP 2968062B2
- Authority
- JP
- Japan
- Prior art keywords
- furnace
- opening
- heat treatment
- quartz tube
- semiconductor heat
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- Electrodes Of Semiconductors (AREA)
Description
【０００１】[0001]
【産業上の利用分野】本発明は、ウェーハの熱処理等に
使用する炉と石英管からなる半導体加熱処理装置に適用
することができ、特にヒーターの降温時間を短縮して石
英管の付帯作業温度に達するまでの待機時間を短縮する
ことができる半導体加熱処理装置に関する。The present invention can be applied to a semiconductor heat treatment apparatus comprising a furnace and a quartz tube used for heat treatment of a wafer and the like, and in particular, shortens the temperature lowering time of the heater to reduce the incidental working temperature of the quartz tube. The present invention relates to a semiconductor heat treatment apparatus capable of shortening a waiting time until the temperature reaches a threshold value.
【０００２】近年、半導体加熱処理装置の安定稼働化、
ごみ対策の要求に伴い、石英管の交換頻度が多くなって
きている。これは、石英管内に堆積した多量の生成膜に
よる汚れを清浄するために行うものであり、プロセスが
不安定になるのを防止する手段として実施している。そ
のため、石英管交換時におけるヒーター降温時間を短縮
化することができる半導体加熱処理装置が要求されてい
る。よって、炉体開度によるヒーターの強制空冷が必要
である。[0002] In recent years, stable operation of semiconductor heat treatment equipment has been improved.
The frequency of replacement of quartz tubes has been increasing with the demand for measures against waste. This is performed in order to clean dirt due to a large amount of generated film deposited in the quartz tube, and is implemented as means for preventing the process from becoming unstable. Therefore, there is a demand for a semiconductor heat treatment apparatus capable of shortening the heater cooling time when replacing a quartz tube. Therefore, forced air cooling of the heater by the furnace opening is required.
【０００３】[0003]
【従来の技術】従来の半導体加熱処理装置には、例えば
特開昭５９−５５０１１号公報で報告されたものがあ
る。以下、具体的に図面を用いて説明する。その半導体
加熱処理装置においては、図２（ａ）の模式的横方向断
面図に示される如く、直径 200〜300 mmで長さ１〜２ｍ
程度の石英管31は円筒形のものを使用し、炉32をその長
手方向に炉半部分32ａと炉半部分32ｂとに２分割し、蝶
番部33によって例えば炉半部分32ｂが開閉可能な如くに
構成し、石英管31を炉32の長手方向ではなく図に矢印で
示す如く炉32の縦軸に垂直な方向に出入可能にする。な
お、炉半部分32ｂに代え炉半部分32ａを開閉可能な構成
としてもよい。2. Description of the Related Art A conventional semiconductor heat treatment apparatus is disclosed in, for example, JP-A-59-55011. Hereinafter, a specific description will be given with reference to the drawings. The semiconductor heat treatment apparatus has a diameter of 200 to 300 mm and a length of 1 to 2 m, as shown in a schematic transverse sectional view of FIG.
The quartz tube 31 is cylindrical in shape, and the furnace 32 is divided into a furnace half portion 32a and a furnace half portion 32b in the longitudinal direction, and the hinge portion 33 allows the furnace half portion 32b to be opened and closed, for example. And the quartz tube 31 can be moved in and out of the longitudinal direction of the furnace 32 in the direction perpendicular to the longitudinal axis of the furnace 32 as shown by the arrow in the figure. The furnace half 32a may be opened and closed instead of the furnace half 32b.
【０００４】蝶番部33は炉32の長手方向に複数個適宜間
隔をおいて設けても、または強固な材料で１個所に設け
てもよい。コイル34は適正な温度分布を得る目的で例え
ば３個用意し、３個のコイル34を図２（ｂ）に示す如く
に石英管31を取り囲むように簾状に配置し、図２（ｃ）
に示す如くコイル34のために炉32の碍子35を設け、更に
断熱材を設ける。A plurality of hinges 33 may be provided at appropriate intervals in the longitudinal direction of the furnace 32, or may be provided at a single location with a strong material. For example, three coils 34 are prepared in order to obtain an appropriate temperature distribution, and the three coils 34 are arranged in a blind shape so as to surround the quartz tube 31 as shown in FIG.
The insulator 35 of the furnace 32 is provided for the coil 34 as shown in FIG.
【０００５】以上に説明した炉においては、石英管31が
炉32の縦軸の垂直方向に取り出し得るので、処理室の内
部のスペースを考慮し、図２（ａ）の矢印に示す如く水
平に対し斜め方向に例えば略45度の角度で出し入れでき
るようにしても、または、炉半部分32ａ，32ｂを同時に
開閉し得る構造としても、あるいは石英管31を垂直方向
に出し入れし得るようにしてもよい。いずれの方向に出
し入れするにせよ、この半導体加熱処理装置において
は、炉32の長手方向で石英管31を取り出す分割型ではな
く一体型の炉を有する半導体加熱処理装置の場合に比べ
極めて容易に、かつ、短時間内で石英管の出し入れを行
うことができるという利点がある。In the furnace described above, since the quartz tube 31 can be taken out in the vertical direction of the longitudinal axis of the furnace 32, taking the space inside the processing chamber into consideration, the quartz tube 31 is horizontally moved as shown by the arrow in FIG. On the other hand, it is possible to make it possible to take in and out the oblique direction at an angle of, for example, about 45 degrees, or to have a structure in which the furnace halves 32a and 32b can be simultaneously opened and closed, or to make the quartz tube 31 be able to be taken in and out in the vertical direction. Good. Regardless of which direction the semiconductor heat treatment apparatus is put into and taken out, in this semiconductor heat treatment apparatus, it is much easier than in the case of a semiconductor heat treatment apparatus having an integrated furnace instead of a split type in which the quartz tube 31 is taken out in the longitudinal direction of the furnace 32, In addition, there is an advantage that the quartz tube can be taken in and out in a short time.
【０００６】[0006]
【発明が解決しようとする課題】しかしながら、上記し
た従来の半導体加熱処理装置は、炉32の開閉を炉32から
石英管31を出し入れするためだけに行っており、 900℃
（成長温度）程度まで昇温した炉32の冷却を炉32近傍に
設けたラジエター、排気ダクト等による自然空冷によっ
て行っていたため、ヒーターをＯＦＦにしてもヒーター
の降温スピードが著しく遅く、石英管31の付帯作業温度
（100 ℃程度以下）に達するまでに６〜７時間以上と待
機時間に長時間を要し、装置全体の稼働率が低下してし
まうという問題があった。However, in the above-described conventional semiconductor heat treatment apparatus, the furnace 32 is opened and closed only to take the quartz tube 31 in and out of the furnace 32, and 900 ° C.
(Growth temperature) Since the cooling of the furnace 32 was performed by natural air cooling using a radiator, an exhaust duct, and the like provided in the vicinity of the furnace 32, even when the heater was turned off, the temperature decreasing speed of the heater was extremely slow, and the quartz tube 31 was cooled. It takes 6 to 7 hours or more to wait for the incidental working temperature (about 100 ° C. or less), and a long standby time is required, which lowers the operation rate of the entire apparatus.
【０００７】そこで本発明は、ヒーターの降温時間を短
縮して石英管の付帯作業温度に達するまでの待機時間を
短縮することができ、装置稼働率を向上させることがで
きる半導体加熱処理装置を提供することを目的としてい
る。Accordingly, the present invention provides a semiconductor heat treatment apparatus capable of shortening the heater cooling time and shortening the waiting time until the temperature reaches the auxiliary work temperature of the quartz tube and improving the operation rate of the apparatus. It is intended to be.
【０００８】[0008]
【課題を解決するための手段】本発明による半導体加熱
処理装置は上記目的達成のため、熱処理される縦長の石
英管が炉の内部に配置され、該炉がその長手方向に２分
割され、２分割された炉半部分の少なくともどちらか一
方が炉開閉ヒンジ部によって開閉可能な構成とした半導
体加熱処理装置において、該炉半部分の少なくともどち
らか一方を開けるのを間欠揺動的または自動揺動的に行
う手段を設けるものである。In order to achieve the above object, a semiconductor heat treatment apparatus according to the present invention has a vertically elongated quartz tube to be heat-treated disposed inside a furnace, and the furnace is divided into two parts in its longitudinal direction. In a semiconductor heating apparatus in which at least one of the divided furnace halves can be opened and closed by a furnace opening / closing hinge portion, opening at least one of the furnace halves is intermittent swinging or automatic swinging. This is to provide a means for performing the operation.
【０００９】[0009]
【作用】本発明では、図１に示すように、加熱された石
英管１及び炉２の冷却を炉開閉メカ機構部５によって炉
半部分２ｂを間欠揺動的に開けることにより行うように
したため、ヒートダウン時における炉２内の高温熱雰囲
気を炉２外に排気することができ、従来の自然空冷によ
る場合よりも急激なる強制空冷を行うことができる。In the present invention, as shown in FIG. 1, the heated quartz tube 1 and the furnace 2 are cooled by opening the furnace half 2b intermittently by the furnace opening / closing mechanism mechanism 5. In addition, the high-temperature atmosphere in the furnace 2 at the time of heat down can be exhausted to the outside of the furnace 2, and forced air cooling can be performed more rapidly than in the case of conventional natural air cooling.
【００１０】[0010]
【実施例】以下、本発明を図面に基づいて説明する。図
１は本発明に係る半導体加熱処理装置の一実施例の構成
を示す装置概略図（横方向断面図）である。図１におい
て、１は石英管であり、図２に示した従来と同様円筒形
のものを使用し、炉２をその長手方向に炉半部分２ａと
炉半部分２ｂとに２分割し、炉開閉ヒンジ部３によって
例えば炉半部分２ｂが開閉可能な如く構成し、石英管１
を炉２の長手方向ではなく炉２の縦軸に垂直な方向に出
入可能にする。なお、炉半部分２ｂに代え炉半部分２ａ
を開閉可能な構成としてもよい。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below with reference to the drawings. FIG. 1 is an apparatus schematic diagram (lateral cross section) showing the configuration of an embodiment of a semiconductor heat treatment apparatus according to the present invention. In FIG. 1, reference numeral 1 denotes a quartz tube which has a cylindrical shape similar to the conventional one shown in FIG. 2, and divides a furnace 2 into a furnace half 2a and a furnace half 2b in the longitudinal direction thereof. For example, the furnace half 2b is configured to be openable and closable by the opening / closing hinge 3, and the quartz tube 1
Can enter and exit not in the longitudinal direction of the furnace 2 but in the direction perpendicular to the longitudinal axis of the furnace 2. The furnace half 2a is replaced with the furnace half 2a.
May be opened and closed.
【００１１】炉開閉ヒンジ部３は炉２の長手方向に複数
個適宜間隔をおいて設けても、または、強固な材料で１
個所に設けてもよい。ここでは所定間隔を開けて 個所
設ける。A plurality of the furnace opening / closing hinges 3 may be provided at appropriate intervals in the longitudinal direction of the furnace 2 or may be made of a strong material.
It may be provided at a location. Here, they are provided at predetermined intervals.
【００１２】抵抗加熱ヒーターとなるコイルは従来と同
様、適正な温度分布を得る目的でこのコイルを簾状に石
英管１を取り囲むように配置し、コイルのために碍子を
設け、更に断熱材を設ける。そして、炉開閉ヒンジ部３
が２分割された炉２を有する分割炉４と炉開閉メカ機構
部５間を連結するようになっており、その炉半部分２
ａ，２ｂ間の開閉を間欠制御する間欠制御部６が炉開閉
メカ機構部５に取付けられており、処理室７に設けられ
た排気ダクト８で炉２の高温熱雰囲気を排気するように
なっている。ここでの５ａ及び５ｂは分割炉４を間欠開
閉する炉開閉メカ機構部５を構成しており、例えばワイ
ヤー支持及びＡＣモーター駆動による揺動機構で構成さ
れている。間欠揺動動作は間欠制御部６にて設定された
動作時間にて揺動動作する。また、揺動タイム・パラメ
ーターを伴うタイム監視制御により任意の揺動角度が自
動調整され、間欠なる分割炉の開閉度を一定にする。As in the prior art, the coil serving as the resistance heater is arranged so as to surround the quartz tube 1 in a cord-like manner in order to obtain an appropriate temperature distribution, an insulator is provided for the coil, and a heat insulating material is further provided. Provide. And the furnace opening / closing hinge 3
Is connected between a divided furnace 4 having a furnace 2 divided into two and a furnace opening / closing mechanism mechanism 5, and the furnace half 2
An intermittent control unit 6 for intermittently controlling the opening and closing between a and 2b is attached to the furnace opening / closing mechanism mechanism unit 5, and an exhaust duct 8 provided in the processing chamber 7 exhausts the high-temperature hot atmosphere of the furnace 2. ing. Here, 5a and 5b constitute a furnace opening / closing mechanism mechanism section 5 for intermittently opening and closing the divided furnace 4, and are constituted by, for example, a swinging mechanism driven by a wire and driven by an AC motor. In the intermittent swing operation, the swing operation is performed for the operation time set by the intermittent control unit 6. In addition, an arbitrary swing angle is automatically adjusted by time monitoring control with a swing time parameter, and the degree of opening and closing of the intermittent split furnace is kept constant.
【００１３】一方、炉２の強制空冷が開始されると、ヒ
ーターはヒートダウンし、各種の監視インターロック及
び安全確認を経てから上記同様な分割炉の任意なる間欠
開閉が実行される。この間欠開閉は分割炉全開における
高温熱雰囲気の放出によって生じ、ヒーター素線の劣化
防止、炉体開閉メカ機構部の保護、熱雰囲気における排
気効率の改善等のために実施する。この間欠開閉動作は
全閉状態（炉２温度 900℃) →間欠開閉１（開閉度：約
10度）→冷却１（待機時間：約10分）→間欠開閉２（開
閉度：約30度）→冷却２（待機時間：約20分）→間欠開
閉３（開閉度：約45度）→冷却３（待機時間：約30分）
→全開状態（開閉度：約50度）→冷却４（待機時間：降
温設定温度 100℃）から成り立っている。これらの動作
シーケンスは炉開閉メカ機構部５と間欠制御部６との連
動動作によって、分割炉４の任意なる間欠開閉を実行す
ることができる。このような手段によって、ヒートダウ
ン時における炉２内の高温熱雰囲気を炉体開度と冷却時
間の任意パラメーター及び間欠動作シーケンスの組み合
わせにより、炉２の急激な強制空冷を実行することがで
きる。なお、ヒーターの熱容量及び排気ダクト容量によ
る降温スピードの変化は任意パラメーターの設定変更に
て対応すればよい。On the other hand, when the forced air cooling of the furnace 2 is started, the heater is heated down, and after various monitoring interlocks and safety confirmations, arbitrary intermittent opening and closing of the above-described split furnace is executed. This intermittent opening / closing is caused by the release of a high-temperature hot atmosphere when the split furnace is fully opened, and is performed to prevent deterioration of the heater wires, protect the furnace body opening / closing mechanism, improve the exhaust efficiency in the hot atmosphere, and the like. This intermittent opening / closing operation is fully closed (furnace 2 temperature 900 ° C) → intermittent opening / closing 1 (opening / closing degree: approx.
10 degrees) → Cooling 1 (standby time: about 10 minutes) → Intermittent open / close 2 (opening / closing degree: about 30 degrees) → Cooling 2 (standby time: about 20 minutes) → Intermittent open / close 3 (opening / closing degree: about 45 degrees) → Cooling 3 (standby time: about 30 minutes)
→ Fully open state (opening / closing degree: approx. 50 degrees) → Cooling 4 (standby time: temperature setting temperature 100 ° C). In these operation sequences, arbitrary intermittent opening and closing of the split furnace 4 can be executed by the interlocking operation of the furnace opening and closing mechanism 5 and the intermittent control unit 6. By such means, rapid forced air-cooling of the furnace 2 can be executed in the high-temperature thermal atmosphere in the furnace 2 at the time of heat-down, by combining arbitrary parameters of the furnace body opening degree and the cooling time and the intermittent operation sequence. The change in the temperature drop speed due to the heat capacity of the heater and the capacity of the exhaust duct may be handled by changing the setting of an arbitrary parameter.
【００１４】このように、本実施例では、加熱された石
英管１及び炉２の冷却を炉開閉メカ機構部５によって炉
半部分２ｂを間欠的に開けることにより行うようにした
ため、ヒートダウン時における炉２内の高温熱雰囲気を
炉２外に排気することができる。このため、従来の自然
空冷による場合よりも急激なる強制空冷を行うことがで
き、ヒーターの降温時間を短縮して石英管１の付帯作業
温度に達するまでの待機時間を短縮することができる。
従って、装置稼働率を向上させることができる。As described above, in this embodiment, the heated quartz tube 1 and the furnace 2 are cooled by opening the furnace half 2b intermittently by the furnace opening / closing mechanism mechanism 5, so that the heat , The high-temperature heat atmosphere in the furnace 2 can be exhausted to the outside of the furnace 2. For this reason, forced air cooling can be performed more rapidly than in the case of the conventional natural air cooling, and the temperature drop time of the heater can be reduced, and the waiting time until the temperature of the quartz tube 1 reaches the incidental operation temperature can be reduced.
Therefore, the operation rate of the device can be improved.
【００１５】なお、上記実施例では分割炉４を開けるの
を間欠揺動動作で行う場合について説明したが、本発明
はこれに限定されるものではなく、ゆっくりした自動揺
動動作で行う場合であってもよい。In the above embodiment, the case where the split furnace 4 is opened by the intermittent rocking operation has been described. However, the present invention is not limited to this case. There may be.
【００１６】上記実施例は、分割炉を横型設置する場合
について説明したが、本発明はこれに限定されるもので
はなく、開閉可能に付随する設置様式、例えば縦型設置
する場合であってもよい。また、熱雰囲気の排気方法
を、排気ダクト８で行うのではなく、強制空冷に付随す
る排気源、例えば水封ポンプのエアー吸入口等で行う場
合であってもよい。In the above embodiment, the case where the split furnace is installed horizontally has been described. However, the present invention is not limited to this case. Good. Further, the method of exhausting the hot atmosphere may be performed not by the exhaust duct 8 but by an exhaust source associated with forced air cooling, for example, an air inlet of a water seal pump.
【００１７】[0017]
【発明の効果】本発明によれば、ヒーターの降温時間を
短縮して石英管の付帯作業温度に達するまでの待機時間
を短縮することができ、装置稼働率を向上させることが
できるという効果がある。According to the present invention, it is possible to shorten the time required for the heater to cool down, thereby reducing the waiting time until the temperature reaches the operation temperature of the quartz tube, thereby improving the operation rate of the apparatus. is there.
【図１】本発明の一実施例に則した半導体加熱処理装置
の構成を示す装置概略図である。FIG. 1 is an apparatus schematic diagram showing a configuration of a semiconductor heat treatment apparatus according to one embodiment of the present invention.
【図２】従来例の半導体加熱処理装置の構成を示す装置
概略図である。FIG. 2 is an apparatus schematic diagram showing a configuration of a conventional semiconductor heat treatment apparatus.
１ 石英管 ２ 炉 ２ａ，２ｂ 炉半部分 ３ 炉開閉ヒンジ部 DESCRIPTION OF SYMBOLS 1 Quartz tube 2 Furnace 2a, 2b Furnace half part 3 Furnace opening / closing hinge part
───────────────────────────────────────────────────── フロントページの続き (58)調査した分野(Int.Cl.6，ＤＢ名) H01L 21/22 501 H01L 21/205 H01L 21/285 H01L 21/31 ──────────────────────────────────────────────────続 き Continued on the front page (58) Field surveyed (Int.Cl. 6 , DB name) H01L 21/22 501 H01L 21/205 H01L 21/285 H01L 21/31
Claims (1)
（２）の内部に配置され、該炉（２）がその長手方向に
２分割され、２分割された炉半部分（２ａ，２ｂ）の少
なくともどちらか一方が炉開閉ヒンジ部（３）によって
開閉可能な構成とした半導体加熱処理装置において、該
炉半部分（２ａ，２ｂ）の少なくともどちらか一方を開
けるのを間欠揺動的または自動揺動的に行う手段を設け
ることを特徴とする半導体加熱処理装置。An elongated quartz tube (1) to be heat-treated is arranged inside a furnace (2), and the furnace (2) is divided into two parts in a longitudinal direction thereof, and the furnace half part (2a, 2a) is divided into two parts. In a semiconductor heat treatment apparatus in which at least one of 2b) can be opened and closed by a furnace opening / closing hinge (3), opening of at least one of the furnace halves (2a, 2b) is intermittently oscillating. Alternatively, there is provided a semiconductor heat treatment apparatus provided with a means for automatically oscillating.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2603891A JP2968062B2 (en) | 1991-02-20 | 1991-02-20 | Semiconductor heat treatment equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2603891A JP2968062B2 (en) | 1991-02-20 | 1991-02-20 | Semiconductor heat treatment equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04264717A JPH04264717A (en) | 1992-09-21 |
| JP2968062B2 true JP2968062B2 (en) | 1999-10-25 |
Family
ID=12182536
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2603891A Expired - Fee Related JP2968062B2 (en) | 1991-02-20 | 1991-02-20 | Semiconductor heat treatment equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2968062B2 (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL1027903C2 (en) * | 2004-12-28 | 2006-06-29 | Tempress Systems | Vertical oven for high temperature machining of semiconductor materials. |
| JP4753294B2 (en) * | 2005-11-04 | 2011-08-24 | 株式会社不二越 | Small vacuum carburizing furnace |
| CN107588664B (en) * | 2017-07-18 | 2023-06-02 | 广州迪塑智能装备有限公司 | Cable sintering furnace |
-
1991
- 1991-02-20 JP JP2603891A patent/JP2968062B2/en not_active Expired - Fee Related
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| Publication number | Publication date |
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| JPH04264717A (en) | 1992-09-21 |
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