JP2933148B2 - Method for manufacturing diffusion furnace member for semiconductor - Google Patents
Method for manufacturing diffusion furnace member for semiconductorInfo
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- JP2933148B2 JP2933148B2 JP3253501A JP25350191A JP2933148B2 JP 2933148 B2 JP2933148 B2 JP 2933148B2 JP 3253501 A JP3253501 A JP 3253501A JP 25350191 A JP25350191 A JP 25350191A JP 2933148 B2 JP2933148 B2 JP 2933148B2
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Description
【０００１】[0001]
【産業上の利用分野】本発明は半導体用拡散炉部材の製
造方法に係り、特に、耐熱衝撃性、耐汚染性に優れ、軽
量で低熱容量の炭化珪素（ＳｉＣ）製半導体用拡散炉部
材の製造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a diffusion furnace member for a semiconductor .
More particularly, the present invention relates to a method of manufacturing a light-weight, low-heat-capacity diffusion furnace member made of silicon carbide (SiC) for semiconductors having excellent thermal shock resistance and contamination resistance.
【０００２】[0002]
【従来の技術】拡散炉は、Ｓｉ単結晶ウェハを高温に加
熱して不純物をドーピングしたり、酸化膜を形成する工
程で用いられるものであり、半導体デバイスの製造工程
のなかでも最も基本的な設備である。2. Description of the Related Art A diffusion furnace is used in a process of doping impurities or forming an oxide film by heating a Si single crystal wafer to a high temperature, and is the most basic in a semiconductor device manufacturing process. Equipment.
【０００３】近年、半導体についても高集積度化が進
み、拡散炉に用いられる部材、例えば、プロセスチュー
ブ、ライナーチューブ、ウェハボート、マザーボート、
パドル等の半導体用拡散炉部材についても高純度化が必
要とされると共に、Ｓｉウェハの大口径化に伴う拡散炉
部材の大型化、高強度化が必要とされるようになり、Ｓ
ｉＣ製高特性半導体用拡散炉部材の出現が望まれてい
る。[0003] In recent years, the degree of integration of semiconductors has also increased, and members used in diffusion furnaces, such as process tubes, liner tubes, wafer boats, mother boats,
The diffusion furnace members for semiconductors such as paddles are required to be highly purified, and the diffusion furnace members are required to be large-sized and high-strength due to the large diameter of the Si wafer.
The emergence of a high-performance semiconductor diffusion furnace member made of iC is desired.
【０００４】従来、ＳｉＣ系拡散炉部材としては、次の
ようなものが提案されている。Conventionally, the following materials have been proposed as SiC-based diffusion furnace members.
【０００５】 再結晶ＳｉＣからなる基材の内外面に
ＳｉＣ被膜を形成するもの（特開昭５９−１８９６２
２）。この構成により、再結晶ＳｉＣ単独のものに比べ
て、内部酸化を防止することができる。また、Ｓｉを含
有しないことから、Ｓｉ−ＳｉＣ質のものに比べて、Ｓ
ｉによる不純物の拡散を抑制することができる。A method in which a SiC coating is formed on the inner and outer surfaces of a substrate made of recrystallized SiC (Japanese Patent Laid-Open No. 59-18962)
2). With this configuration, internal oxidation can be prevented as compared with the case where recrystallized SiC is used alone. In addition, since it does not contain Si, it has a higher S content than Si-SiC materials.
i can suppress diffusion of impurities.
【０００６】 再結晶ＳｉＣにＳｉを含浸したＳｉ−
ＳｉＣ質基材に、１０〜５００μｍ厚さの緻密なＳｉＣ
被膜を形成したもの（特公昭６１−２０１２８）。この
構成により、ＳｉＣ被膜がないＳｉ−ＳｉＣ質のものと
比べてＨＣｌガスやＨＦ−ＨＮＯ3溶液による洗浄に対
して耐洗浄性が向上する。[0006] Si-impregnated with re-crystallized SiC impregnated with Si
Dense SiC with a thickness of 10-500 μm on SiC substrate
One with a coating (Japanese Patent Publication No. 61-20128). With this configuration, the cleaning resistance with respect to cleaning with HCl gas or HF-HNO 3 solution is improved as compared with a Si-SiC material having no SiC coating.
【０００７】 チューブ、パドル等の拡散炉部材をＳ
ｉ−ＳｉＣ質で構成したもの（特公昭５４−１０８２
５）。A diffusion furnace member such as a tube and a paddle is made of S
Those made of i-SiC (Japanese Patent Publication No. 54-1082)
5).
【０００８】[0008]
【発明が解決しようとする課題】本発明者らは、チュー
ブ、ボート等の拡散炉部材として本質的に求められるべ
き特性について検討を重ねた結果、特に、高純度、高強
度、大型拡散炉部材として、次のような特性が必要とさ
れることを知見した。SUMMARY OF THE INVENTION The inventors of the present invention have studied the characteristics that are essentially required for diffusion furnace members such as tubes and boats, and as a result, have found that, in particular, high-purity, high-strength, large-size diffusion furnace members. It was found that the following characteristics were required.
【０００９】(1) 昇降温に耐え得る熱衝撃に対する耐久
性に優れること。 (2) 高温における使用に際して、不純物を外部に放出す
ることがなく（拡散障壁）、耐汚染性に優れること。 (3) 軽量でハンドリング性に優れること。 (4) 熱容量が小さく、加熱し易いこと。(1) It has excellent durability against thermal shock that can withstand temperature rise and fall. (2) When used at high temperatures, impurities should not be released to the outside (diffusion barrier) and have excellent contamination resistance. (3) Light weight and excellent handling. (4) Heat capacity is small and heating is easy.
【００１０】しかしながら、従来において、上記特性を
すべて満足する拡散炉部材は提供されていない。例え
ば、前記の拡散炉部材では、上記(1) 〜(4) の特性の
改善について全く触れられておらず、わずかに不純物の
拡散の面で、Ｓｉの悪作用を述べているが、他の特性を
満足し得ない。また、，の拡散炉部材でも上記特性
を満たすことはできない。However, a diffusion furnace member satisfying all the above characteristics has not been provided. For example, in the above-mentioned diffusion furnace member, the improvement of the characteristics of the above (1) to (4) is not mentioned at all, and the adverse effect of Si is described slightly in terms of diffusion of impurities. The characteristics cannot be satisfied. Further, the above characteristics cannot be satisfied even with the diffusion furnace members of (1) and (2).
【００１１】本発明は上記従来の問題点を解決し、耐熱
衝撃性、耐汚染性に優れ、軽量で熱容量の小さい高特性
半導体用拡散炉部材の製造方法を提供することを目的と
する。An object of the present invention is to solve the above-mentioned conventional problems and to provide a method of manufacturing a high-performance semiconductor diffusion furnace member which is excellent in thermal shock resistance and contamination resistance, lightweight and has a small heat capacity.
【００１２】[0012]
【課題を解決するための手段】本発明の半導体用拡散炉
部材の製造方法は、平均気孔径が２０〜２００μｍ、気
孔率１２〜７０％の多孔質ＳｉＣ基体の表面層に、該多
孔質炭化珪素基体の表面から深さ方向に化学蒸着法によ
り炭化珪素を浸透させることにより厚さ１０〜２００μ
ｍのＳｉＣ浸透層を形成し、更に引き続いて、化学蒸着
の条件を調節して、該浸透層上に厚さ１０μｍ以上の化
学蒸着法による緻密ＳｉＣ被覆層を形成することを特徴
とする。According to a method of manufacturing a diffusion furnace member for a semiconductor according to the present invention, a porous carbon substrate having a mean pore diameter of 20 to 200 μm and a porosity of 12 to 70% is formed on a surface layer of the porous SiC substrate. 10 to 200 μm in thickness by penetrating silicon carbide by chemical vapor deposition in the depth direction from the surface of the silicon substrate
forming a SiC permeation layer of m, further subsequently, chemical vapor deposition
Conditions by adjusting the characterized that you form a dense SiC coating layer of thickness of 10μm or more chemical vapor deposition on the infiltration layer.
【００１３】以下に本発明を図面を参照して詳細に説明
する。第１図は本発明で製造される半導体用拡散炉部材
の一実施例を示す拡大断面図である。Hereinafter, the present invention will be described in detail with reference to the drawings. FIG. 1 is an enlarged sectional view showing one embodiment of a diffusion furnace member for a semiconductor manufactured by the present invention.
【００１４】図示の如く、本発明で製造される半導体用
拡散炉部材１は、多孔質ＳｉＣ基体２の表面層に、Ｓｉ
Ｃ浸透層３が形成され、更に、このＳｉＣ浸透層３の上
に緻密ＳｉＣ被覆層４が形成されているものである。As shown in the figure, a diffusion furnace member 1 for a semiconductor manufactured according to the present invention has a porous SiC substrate 2 having a surface layer of Si.
A C permeable layer 3 is formed, and a dense SiC coating layer 4 is formed on the SiC permeable layer 3.
【００１５】本発明において、多孔質ＳｉＣ基体は、平
均気孔径が２０〜２００μｍ、気孔率１２〜７０％のも
のである。平均気孔径が２００μｍを超えると静的強度
が低下する。得られる部材の強度、耐熱衝撃性等の面か
ら、平均気孔径は２０〜２００μｍとする。また、気孔
率が７０％を超えると静的強度が低下し、１２％未満で
あると耐熱衝撃性が不足する上に、軽量性が損なわれ、
また、熱容量が大きくなる。従って、気孔率は１２〜７
０％とする。In the present invention, the porous SiC substrate has an average pore diameter of 20 to 200 μm and a porosity of 12 to 70%. If the average pore diameter exceeds 200 μm, the static strength decreases. The average pore diameter is set to 20 to 200 μm from the viewpoint of the strength, thermal shock resistance, and the like of the obtained member. When the porosity exceeds 70%, the static strength decreases. When the porosity is less than 12%, the thermal shock resistance is insufficient, and the lightness is impaired.
Also, the heat capacity increases. Therefore, the porosity is 12-7.
0%.
【００１６】また、ＳｉＣ浸透層はその厚さが１０〜２
００μｍとなるように形成する。ＳｉＣ浸透層の厚さが
２００μｍを超えると、基体を多孔質とする効果が低下
し、１０μｍ未満であると基体とＳｉＣ浸透層の密着性
が低下する。従って、ＳｉＣ浸透層の厚さは１０〜２０
０μｍとする。The thickness of the SiC permeable layer is 10 to 2
It is formed to have a thickness of 00 μm. If the thickness of the SiC permeable layer exceeds 200 μm, the effect of making the substrate porous is reduced, and if it is less than 10 μm, the adhesion between the substrate and the SiC permeable layer is reduced. Therefore, the thickness of the SiC permeation layer is 10-20.
0 μm.
【００１７】更に、緻密ＳｉＣ被覆膜の厚さが１０μｍ
未満であると基体からの不純物の拡散防止効果が不足す
る。不純物拡散防止効果、コスト等の面から、この緻密
ＳｉＣ被覆膜の厚さは５０〜１００μｍとするのが好ま
しい。Further, the thickness of the dense SiC coating film is 10 μm.
If it is less than this, the effect of preventing diffusion of impurities from the base will be insufficient. It is preferable that the thickness of the dense SiC coating film is 50 to 100 μm from the viewpoint of the effect of preventing impurity diffusion and cost.
【００１８】このような半導体用拡散炉部材は、本発明
の方法に従って、例えば、次のようにして製造される。
即ち、まず、多孔質ＳｉＣ基体を製造する。この多孔質
ＳｉＣ基体の製造には、Ｓｉの無いＳｉＣ単相からなる
多孔質ＳｉＣを作製する技術であれば良く、再結晶法、
発泡剤を使用する方法等、いずれの方法を採用しても良
い。いずれの場合も、ＳｉＣ原料粉末の大きさ、発泡剤
の種類、量、その他各種条件を、前記平均気孔径及び気
孔率となるように適宜調整する。[0018] Such semi-conductor diffusion furnace member, the present invention
According to the above method, for example, it is manufactured as follows.
That is, first, a porous SiC substrate is manufactured. The production of the porous SiC substrate may be any technique for producing a porous SiC composed of a single phase of SiC without Si, such as a recrystallization method,
Any method such as a method using a foaming agent may be adopted. In any case, the size of the SiC raw material powder, the type and amount of the foaming agent, and other various conditions are appropriately adjusted so that the average pore diameter and the porosity are obtained.
【００１９】次いで、得られた多孔質ＳｉＣ基体の表層
部分の所定厚さ部分に、化学蒸着法によりＳｉＣを浸透
させてＳｉＣ浸透層を形成する。この場合、化学蒸着条
件を適宜調整することにより、所望の深さ方向にＳｉＣ
を浸透させることができる。Next, SiC is infiltrated into a predetermined thickness portion of the surface layer portion of the obtained porous SiC substrate by a chemical vapor deposition method to form a SiC permeable layer. In this case, by appropriately adjusting the chemical vapor deposition conditions, SiC can be formed in a desired depth direction.
Can be infiltrated.
【００２０】更に、上記ＳｉＣ浸透層の形成に引き続い
て、化学蒸着の条件を適宜調整することにより、表面に
所定厚さの緻密質ＳｉＣ被覆層を形成する。Further, following the formation of the SiC infiltration layer, a dense SiC coating layer having a predetermined thickness is formed on the surface by appropriately adjusting the conditions of chemical vapor deposition.
【００２１】[0021]
【作用】本発明に係る半導体用拡散炉部材の基体は、多
孔質ＳｉＣ基体であるため、熱歪に対する吸収効果が良
好で、耐熱衝撃性に優れる。しかも、軽量で熱容量も小
さい。Since the substrate of the diffusion furnace member for semiconductor according to the present invention is a porous SiC substrate, it has a good effect of absorbing thermal strain and has excellent thermal shock resistance. Moreover, it is lightweight and has a small heat capacity.
【００２２】また、その表層部には化学蒸着法によるＳ
ｉＣ浸透層が形成され、更に緻密ＳｉＣ被覆層が形成さ
れ、表面は緻密質とされているため、 静的強度が著
しく高い。 熱衝撃時における蒸着膜の耐剥離性に優
れる。 基体からの不純物の拡散が確実に防止され
る。といった効果が奏される。The surface layer is made of S by chemical vapor deposition.
Since the iC penetration layer is formed, the dense SiC coating layer is further formed, and the surface is made dense, the static strength is extremely high. Excellent exfoliation resistance of deposited film during thermal shock. Diffusion of impurities from the substrate is reliably prevented. Such an effect is produced.
【００２３】因みに、従来のＳｉ−ＳｉＣ質拡散炉部材
では、後掲の実施例１で測定した耐熱衝撃の限度がΔＴ
＝３５０℃であるのに対し、本発明で製造される拡散炉
部材はΔＴ＝８５０℃に向上する。また、嵩密度も従来
のＳｉ−ＳｉＣ質拡散炉部材はρ＝２．８程度であるの
に対し、本発明で製造される拡散炉部材はρ＝１．８程
度と、約３６％の重量減となる。Incidentally, in the conventional Si-SiC diffusion furnace member, the limit of the thermal shock measured in Example 1 described later is ΔT.
= 350 ° C., whereas the diffusion furnace member manufactured according to the present invention improves to ΔT = 850 ° C. Also, the bulk density of the conventional Si-SiC diffusion furnace member is about ρ = 2.8, whereas the diffusion furnace member manufactured by the present invention has a bulk density of about ρ = 1.8, which is about 36% by weight. Will be reduced.
【００２４】[0024]
【実施例】以下に実施例を挙げて、本発明をより具体的
に説明する。The present invention will be described more specifically with reference to the following examples.
【００２５】実施例１ 嵩密度１．８、気孔率４５％、平均気孔径５０μｍの多
孔質ＳｉＣ基体に、ＳｉＣｌ4／Ｃ3Ｈ8／Ｈ2の混合ガス
を用い、ガス条件、温度を調整することにより、２０μ
ｍ厚さのＳｉＣ浸透層及び１０μｍ厚さの緻密ＳｉＣ被
覆層を形成してサンプルを作製した。Example 1 A gas mixture of SiCl 4 / C 3 H 8 / H 2 was used for a porous SiC substrate having a bulk density of 1.8, a porosity of 45%, and an average pore diameter of 50 μm, and gas conditions and temperature were adjusted. By doing, 20μ
A sample was prepared by forming a m-thick SiC permeation layer and a 10 μm-thick dense SiC coating layer.
【００２６】得られたサンプルを用い、常温において４
点曲げ試験を行なった。また、熱衝撃（各温度に保持し
た後に水中急冷した時の温度差ΔＴによる熱衝撃。従っ
て、常温における測定はΔＴ＝０である。）を与えた後
に４点曲げ試験を行ない、結果を第２図に示した（No.
１）。なお、４点曲げ試験は、ＪＩＳ Ｒ１６０１に基
き、３×４×４０ｍｍの曲げ試験片について行なった。The obtained sample was used at room temperature for 4 hours.
A point bending test was performed. Further, a 4-point bending test was performed after applying a thermal shock (a thermal shock due to a temperature difference ΔT when quenching in water after holding at each temperature. Therefore, the measurement at room temperature is ΔT = 0). As shown in Fig. 2 (No.
1). The four-point bending test was performed on a 3 × 4 × 40 mm bending test piece based on JIS R1601.
【００２７】同様に、ＳｉＣ浸透層及びＳｉＣ被覆層を
全く形成していない多孔質ＳｉＣ基体（No. ２）、Ｓｉ
Ｃ浸透層（厚さ２０μｍ）及びＳｉＣ被覆層（厚さ１０
０μｍ）を形成したもの（No. ３）及び従来のＳｉ−Ｓ
ｉＣ質基材（No. ４）について４点曲げ試験を行ない、
結果を第２図に示した。Similarly, a porous SiC substrate (No. 2) having no SiC permeable layer and no SiC coating layer formed thereon,
C permeation layer (thickness: 20 μm) and SiC coating layer (thickness: 10 μm)
0 μm) (No. 3) and conventional Si—S
A four-point bending test was performed on the iC substrate (No. 4).
The results are shown in FIG.
【００２８】第２図より、本発明の拡散炉部材の製造方
法により、静的強度が大幅に向上されると共に、耐熱衝
撃性も著しく改善されたことが明らかである。FIG. 2 shows that the method of manufacturing the diffusion furnace member according to the present invention.
It is clear that the method significantly improved the static strength and also significantly improved the thermal shock resistance.
【００２９】実施例２ 外径２８０ｍｍ、肉厚６ｍｍ、長さ１２００ｍｍの縦型
プロセスチューブを、従来のＳｉ−ＳｉＣ質基材、本発
明に係る部材（平均気孔径５０μｍ、気孔率４０％の多
孔質ＳｉＣ基体に、厚さ２０μｍのＳｉＣ浸透層及び厚
さ５０μｍのＳｉＣ被覆層を形成したもの）を用いてそ
れぞれ作製した。Example 2 A vertical process tube having an outer diameter of 280 mm, a wall thickness of 6 mm, and a length of 1200 mm was connected to a conventional Si-SiC substrate, a member according to the present invention (porous material having an average pore diameter of 50 μm and a porosity of 40%). Using a porous SiC substrate having a 20 μm thick SiC permeable layer and a 50 μm thick SiC coating layer formed thereon.
【００３０】次に、予め９００℃に設定された加熱炉の
中に、各チューブを入れ、３００ｍｍ／分の速度で加熱
した。Next, each tube was placed in a heating furnace set at 900 ° C. in advance, and heated at a speed of 300 mm / min.
【００３１】その結果、従来のものは天井エッジ部にク
ラックが発生したが、本発明によるものはクラックは全
く発生しなかった。As a result, cracks occurred at the edge of the ceiling in the conventional device, but no cracks occurred in the device according to the present invention.
【００３２】[0032]
【発明の効果】以上詳述した通り、本発明の方法により
製造される半導体用拡散炉部材は、内部多孔質、表面緻
密質のＳｉＣよりなり、しかも、表面の緻密ＳｉＣ被覆
層と内部の多孔質ＳｉＣ基体とは、ＳｉＣ含浸層を介し
て強固に一体化されるため、 (1) 昇降温に耐え得る熱衝撃に対する耐久性に著しく優
れる。 (2) 高温における使用に際して、不純物を外部に放出す
ることがなく（拡散障壁）、耐汚染性に優れる。 (3) 軽量でハンドリング性に優れる。 (4) 熱容量が小さく、加熱し易い。という要求特性をす
べて満足する高特性拡散炉部材である。As described in detail above, the method of the present invention
The manufactured diffusion furnace member for semiconductor is made of internal porous and dense surface SiC, and the surface dense SiC coating layer and the internal porous SiC substrate are firmly integrated via the SiC impregnated layer. Therefore, (1) it is extremely excellent in durability against thermal shock that can withstand temperature rise and fall. (2) When used at high temperatures, it does not release impurities to the outside (diffusion barrier) and has excellent contamination resistance. (3) Light weight and excellent handling. (4) Heat capacity is small and easy to heat. It is a high-performance diffusion furnace member that satisfies all the required characteristics.
【００３３】本発明で製造される半導体用拡散炉部材
は、耐熱衝撃性、耐汚染性に優れ、軽量で低熱容量であ
ることから、プロセスチューブ、ライナーチューブ、ウ
ェハボート、マザーボート、パドル、その他の各種半導
体用拡散炉部材として、特に、高純度、大型、高強度拡
散炉部材として工業的に極めて有用である。The diffusion furnace member for semiconductor manufactured by the present invention is excellent in thermal shock resistance and contamination resistance, light weight and low heat capacity, so that it can be used for process tubes, liner tubes, wafer boats, mother boats, paddles, etc. Is extremely industrially very useful as a diffusion furnace member for various semiconductors, particularly as a high-purity, large-size, high-strength diffusion furnace member.
【図１】第１図は本発明の方法で製造される半導体用拡
散炉部材の一実施例を示す拡大断面図である。FIG. 1 is an enlarged sectional view showing one embodiment of a diffusion furnace member for a semiconductor manufactured by a method of the present invention.
【図２】第２図は実施例１の結果を示すグラフである。FIG. 2 is a graph showing the results of Example 1.
１ 半導体用拡散炉部材 ２ 多孔質ＳｉＣ基体 ３ ＳｉＣ浸透層 ４ 緻密ＳｉＣ被覆層 DESCRIPTION OF SYMBOLS 1 Diffusion furnace member for semiconductors 2 Porous SiC base 3 SiC permeable layer 4 Dense SiC coating layer
フロントページの続き (72)発明者 宮崎 和明 岡山県玉野市玉３丁目１番１号 三井造 船株式会社玉野事業所内 (56)参考文献 特開 昭63−85076（ＪＰ，Ａ) 特開 昭58−84427（ＪＰ，Ａ) 特開 昭59−189622（ＪＰ，Ａ) 特開 昭61−274318（ＪＰ，Ａ) 特開 昭53−114678（ＪＰ，Ａ) 特開 平３−82117（ＪＰ，Ａ)Continuation of front page (72) Inventor Kazuaki Miyazaki 3-1-1, Tamano, Tamano-shi, Okayama Mitsui Engineering & Shipbuilding Co., Ltd. Tamano Works (56) References JP-A-63-85076 (JP, A) JP-A Sho 58-84427 (JP, A) JP-A-59-189622 (JP, A) JP-A-61-274318 (JP, A) JP-A-53-114678 (JP, A) JP-A-3-82117 (JP, A A)
Claims (1)
１２〜７０％の多孔質炭化珪素基体の表面層に、該多孔
質炭化珪素基体の表面から深さ方向に化学蒸着法により
炭化珪素を浸透させることにより厚さ１０〜２００μｍ
の炭化珪素浸透層を形成し、更に引き続いて、化学蒸着
の条件を調節して、該浸透層上に厚さ１０μｍ以上の化
学蒸着法による緻密炭化珪素被覆層を形成することを特
徴とする半導体用拡散炉部材の製造方法。1. A method in which silicon carbide is deposited on a surface layer of a porous silicon carbide substrate having an average pore diameter of 20 to 200 μm and a porosity of 12 to 70% by a chemical vapor deposition method in a depth direction from the surface of the porous silicon carbide substrate. 10-200μm thickness by infiltration
Of forming a silicon carbide permeation layer, further subsequently, chemical vapor deposition
Conditions by adjusting the method of manufacturing a semiconductor diffusion furnace member characterized that you form a dense silicon carbide coating layer by chemical vapor deposition or the thickness 10μm of the said penetration layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3253501A JP2933148B2 (en) | 1991-10-01 | 1991-10-01 | Method for manufacturing diffusion furnace member for semiconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3253501A JP2933148B2 (en) | 1991-10-01 | 1991-10-01 | Method for manufacturing diffusion furnace member for semiconductor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0594957A JPH0594957A (en) | 1993-04-16 |
| JP2933148B2 true JP2933148B2 (en) | 1999-08-09 |
Family
ID=17252262
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3253501A Expired - Fee Related JP2933148B2 (en) | 1991-10-01 | 1991-10-01 | Method for manufacturing diffusion furnace member for semiconductor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2933148B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101593922B1 (en) * | 2014-12-30 | 2016-02-15 | 하나머티리얼즈(주) | Polycrystal silicon carbide bulky part for a semiconductor process by chemical vapor deposition and preparation method thereof |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPWO2011043427A1 (en) * | 2009-10-09 | 2013-03-04 | 信越化学工業株式会社 | Method for densifying porous silicon carbide substrate |
| KR101138440B1 (en) * | 2010-06-17 | 2012-04-26 | 투비엠테크 주식회사 | Porous body with silicon carbide enhancement layer and fabrication method thereof |
| JP6506093B2 (en) * | 2015-04-28 | 2019-04-24 | イビデン株式会社 | Ceramic structure and method of manufacturing ceramic structure |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5884427A (en) * | 1981-11-13 | 1983-05-20 | Toshiba Corp | Furnace tube for forming semiconductor-diffused layer |
| JPS6385076A (en) * | 1986-09-26 | 1988-04-15 | 宇部興産株式会社 | Tool for heating silicon wafer |
-
1991
- 1991-10-01 JP JP3253501A patent/JP2933148B2/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101593922B1 (en) * | 2014-12-30 | 2016-02-15 | 하나머티리얼즈(주) | Polycrystal silicon carbide bulky part for a semiconductor process by chemical vapor deposition and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0594957A (en) | 1993-04-16 |
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