JP2928330B2 - Melting material for sputtering target for optical media - Google Patents
Melting material for sputtering target for optical mediaInfo
- Publication number
- JP2928330B2 JP2928330B2 JP2121515A JP12151590A JP2928330B2 JP 2928330 B2 JP2928330 B2 JP 2928330B2 JP 2121515 A JP2121515 A JP 2121515A JP 12151590 A JP12151590 A JP 12151590A JP 2928330 B2 JP2928330 B2 JP 2928330B2
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- Prior art keywords
- sputtering target
- alloy
- optical media
- film
- composition
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Description
【発明の詳細な説明】 （産業上の利用分野） 本発明は、光メディア用スパッタリングターゲット材
に関し、詳細には、レーザー光を利用し、情報の読み出
し或いは書き込み読み出しを行う光ディスク、光磁気デ
ィスク等の光メディアに用いられる反射膜を形成するた
めのスパッタリングターゲット材に関する。Description: FIELD OF THE INVENTION The present invention relates to a sputtering target material for optical media, and more particularly, to an optical disk, a magneto-optical disk, etc., which reads or writes information using laser light. The present invention relates to a sputtering target material for forming a reflection film used for an optical medium.
（従来の技術） 光ディスク、光磁気ディスク等の光メディアは高信頼
性が要求され、特に記録されたデータの保存性の確保が
重要である。該データ保存性に対して、主に上記メディ
アの主要部を構成する基板上の反射膜の劣化、特に反射
膜の酸化による反射率の経年的低下が大きな影響を及ぼ
すので、該反射率低下の防止が重要課題である。(Prior Art) Optical media such as optical disks and magneto-optical disks are required to have high reliability, and it is particularly important to ensure the preservation of recorded data. Deterioration of the reflection film on the substrate constituting the main part of the medium, particularly deterioration over time of the reflectance due to oxidation of the reflection film, has a great effect on the data storability. Prevention is an important issue.
上記反射膜には従来より純Alが用いられ、これは基板
上に純Alの薄膜を形成したものである。該薄膜形成法と
してはスパッタリング法又は蒸着法があるが、基板との
密着性向上の点からスパッタリング法が採用される場合
が多い。上記純Alとしては初期には99.9％（3N）純度の
ものが用いられていたが、純度が高いほど耐食性に優
れ、前記反射率の経年的低下が生じ難くなるので、現在
では99.99％（4N）純度のものが使用されている。Conventionally, pure Al has been used for the reflective film, which is a thin film of pure Al formed on a substrate. As a method of forming the thin film, there is a sputtering method or a vapor deposition method, but a sputtering method is often adopted from the viewpoint of improving the adhesion to a substrate. Initially, pure Al having a purity of 99.9% (3N) was used. However, the higher the purity, the better the corrosion resistance and the lower the reflectance over time. ) Purity is used.
しかしながら上記純Alからなる反射膜は耐食性に限界
があり、最近の信頼性の高度化の要求を充たし得ず、抜
本的対応策が必要とされている。However, the reflection film made of pure Al has a limit in corrosion resistance, and cannot meet the recent demand for higher reliability, and a drastic countermeasure is required.
そこで、Alの合金化による耐食性向上が試みられ、そ
の結果元素周期表IVa族の金属を含有させたAl合金製の
反射膜が提案され、例えば、特開昭63−224050号公報に
はAl−Ti合金膜が記載されている。かかる合金膜は下記
の如きスパッタリング法により基板上に形成される。即
ち、（ａ）純Alのターゲット上にIVa族金属の小片を置
いたもの、（ｂ）純AlとIVa族金属のブロックをモザイ
ク状に配列したもの、又は、（ｃ）純AlとIVa族金属の
粉末を混合し、焼結したものをスパッタリングターゲッ
ト材に用い、基板上にスパッタする方法により行われ
る。Therefore, an attempt was made to improve corrosion resistance by alloying Al, and as a result, a reflection film made of an Al alloy containing a metal belonging to Group IVa of the periodic table was proposed.For example, JP-A-63-224050 discloses Al- A Ti alloy film is described. Such an alloy film is formed on a substrate by a sputtering method as described below. That is, (a) a small piece of IVa group metal placed on a pure Al target, (b) a block of pure Al and IVa group metal arranged in a mosaic form, or (c) a pure Al and IVa group metal A method in which a metal powder is mixed and sintered is used as a sputtering target material, and sputtering is performed on a substrate.
（発明が解決しようとする課題） ところが、上記（ａ）及び（ｂ）の方法は、AlとIVa
族金属とのスパッタ率及び出射角度が異なるため、得ら
れるAl基合金製の反射膜（以降、合金膜という）の組成
がターゲットの組成（AlとIVa族金属との面積比）より
も小さくなり、この差はスパッタ条件や装置により変化
するので、合金膜の組成を調整し難く、所定の合金膜を
常に安定して得るのが極めて困難である。加えて、ター
ゲット材の使用中に前記面積比が連続的に変化するの
で、所定の組成の合金膜が得られ難いという問題点があ
る。(Problems to be Solved by the Invention) However, the above methods (a) and (b) involve the use of Al and IVa
Since the sputtering rate and emission angle with the group metal are different, the composition of the resulting reflective film made of Al-based alloy (hereinafter referred to as alloy film) becomes smaller than the composition of the target (area ratio between Al and group IVa metal). Since this difference varies depending on sputtering conditions and equipment, it is difficult to adjust the composition of the alloy film, and it is extremely difficult to always obtain a predetermined alloy film stably. In addition, since the area ratio changes continuously during use of the target material, there is a problem that it is difficult to obtain an alloy film having a predetermined composition.
（ｃ）の方法は、Al粉末とIVa族金属粉末とは比重が
比較的異なるため均一に混合され難く、ターゲット材の
組成が不均一になるので、合金膜の組成が不均一になり
易いという問題点がある。又、上記両粉末とも活性であ
り、酸素を吸収し易いので、合金膜は多量の酸素を含有
し、そのため反射率が低くなるという問題点がある。In the method (c), since the Al powder and the IVa group metal powder have relatively different specific gravities, they are difficult to be uniformly mixed, and the composition of the target material becomes non-uniform, so that the composition of the alloy film tends to be non-uniform. There is a problem. Further, since both powders are active and easily absorb oxygen, there is a problem that the alloy film contains a large amount of oxygen and the reflectance is low.
本発明はこの様な事情に着目してなされたものであっ
て、その目的は従来のものがもつ以上のような問題点を
解消し、所定の組成の合金膜を安定して得ることができ
る光メディア用スパッタリングターゲット材を提供しよ
うとするものである。The present invention has been made in view of such circumstances, and the object of the present invention is to solve the above problems of the conventional one and to stably obtain an alloy film having a predetermined composition. An object of the present invention is to provide a sputtering target material for optical media.
（課題を解決するための手段） 上記の目的を達成するために、本発明に係る光メディ
ア用スパッタリングターゲット溶製材は次のような構成
としている。(Means for Solving the Problems) In order to achieve the above-mentioned object, a melted material for a sputtering target for optical media according to the present invention has the following configuration.
即ち、請求項１に記載のスパッタリングターゲット溶
製材は、元素周期表IVa族のTi,Zr,Hfの１種又は２種以
上を0.5〜10at％含有するAl基溶製合金より成るととも
に、該IVa族元素のAlとの金属間化合物がAlマトリック
ス中に均一に分散しており、更に前記Al基溶製合金の酸
素含有量が200ppm以下であることを特徴とする光メディ
ア用スパッタリングターゲット溶製材である。That is, the ingot of the sputtering target according to claim 1 comprises an Al-based ingot alloy containing 0.5 to 10 at% of one or more of Ti, Zr, and Hf of Group IVa of the periodic table. An intermetallic compound of group III element with Al is uniformly dispersed in an Al matrix, and further, the oxygen content of the Al-based ingot alloy is not more than 200 ppm. is there.
請求項２に記載のスパッタリングターゲット溶製材
は、前記金属間化合物が針状であると共に、その長手方
向の大きさが200μｍ以下である請求項１に記載の光メ
ディア用スパッタリングターゲット溶製材である。According to a second aspect of the present invention, there is provided a sputtering target ingot for optical media according to the first aspect, wherein the intermetallic compound is acicular and has a length in a longitudinal direction of 200 μm or less.
（作用） 本発明に係る光メディア用スパッタリングターゲット
溶製材は、前記の如く、元素周期表IVa族の中のTi,Zr,H
fの１種又は２種以上（以降、Ti等という）を0.5〜10at
％含有するAl基溶製合金、即ち溶製過程を経て製された
Al基合金より成るので、前記Ti等のごく一部はAlマトリ
ックス中に固溶して存在し、殆どはAlとの金属間化合物
となって存在する。前者の固溶したTi等の分布は均一で
あり、後者の金属間化合物も通常均一に分散して存在し
ており、かかる均一分散状態は容易に得られる。故に、
前記Ti等は前記Al基合金中に均一分散して存在し、マト
リックスのAlと一体となってターゲット材を形成してい
る。(Function) As described above, the ingot of the sputtering target for optical media according to the present invention includes Ti, Zr, H in the group IVa of the periodic table.
One or more kinds of f (hereinafter referred to as Ti, etc.) are 0.5 to 10 at
% Containing Al-based smelting alloy, that is, manufactured through the smelting process
Since it is made of an Al-based alloy, a very small part of the Ti or the like exists as a solid solution in the Al matrix, and most of the Ti or the like exists as an intermetallic compound with Al. The former, such as solid solution of Ti, has a uniform distribution, and the latter, an intermetallic compound, is usually present in a uniformly dispersed state, and such a uniformly dispersed state can be easily obtained. Therefore,
The Ti and the like are uniformly dispersed in the Al-based alloy and form a target material integrally with Al in the matrix.
かかるターゲット材は、組成的に均一であるため使用
中の組成の経時変化が生じず、又、スパッタ率及び出射
角度が均一であるので、ターゲットの組成と得られる合
金膜の組成とが略一致する。従って、合金膜の組成を調
整し易く、その結果所定の組成の合金膜を安定して得る
ことができる。又、上記ターゲット材は溶製過程を経て
製されるので酸素含有量を低水準にし得、そのため低酸
素量で、高反射率の合金膜が確実に得られる。Since such a target material is compositionally uniform, the composition during use does not change with time, and since the sputtering rate and the emission angle are uniform, the composition of the target and the composition of the obtained alloy film are substantially the same. I do. Therefore, the composition of the alloy film can be easily adjusted, and as a result, an alloy film having a predetermined composition can be stably obtained. In addition, since the target material is manufactured through a melting process, the oxygen content can be reduced to a low level, so that an alloy film having a low oxygen content and a high reflectance can be reliably obtained.
前記Ti等の含有量を0.5〜10at％としているのは、0.5
at％未満では耐食性向上効果が小さく、反射率の経年的
低下を充分に防止し得ず、10at％超では第１図に示す如
く必要な反射率:70％を確保し得なくなるからである。The reason why the content of Ti or the like is set to 0.5 to 10 at% is 0.5
If it is less than at%, the effect of improving corrosion resistance is small, and it is not possible to sufficiently prevent the aging of the reflectance, and if it exceeds 10 at%, it is not possible to secure the necessary reflectance: 70% as shown in FIG.
前記Al基溶製合金の酸素含有量を200ppm超にすると、
反射率が低下する傾向にあるので、前記Al基溶製合金の
酸素含有量を200ppm以下にするようにしている。When the oxygen content of the Al-based alloy is more than 200 ppm,
Since the reflectance tends to decrease, the oxygen content of the Al-based alloy is set to 200 ppm or less.
前記金属間化合物の大きさが200μｍ超の場合は、タ
ーゲット組成と合金膜組成とに差が生じるが、これを20
0μｍ以下にすると該差が殆ど無くなり、合金膜組成を
より調整し易くなる。When the size of the intermetallic compound is more than 200 μm, a difference occurs between the target composition and the alloy film composition.
When the thickness is 0 μm or less, the difference is almost eliminated, and the composition of the alloy film can be more easily adjusted.
尚、上記200μｍ以下にするには、溶解法により得ら
れるAlとTi等との均一混合状態の溶湯を、急冷すればよ
い。該急冷の方法としては、該溶湯を、水冷銅鋳型また
は大冷却能を有する鋳型内に鋳造、水冷銅鋳型内で連続
鋳造する、回転する２本のロールの間に注ぎ薄板を作
る、或いは、不活性ガスにより噴霧化する等の方法が挙
げられる。In order to reduce the thickness to 200 μm or less, the molten metal in a uniform mixed state of Al and Ti obtained by the melting method may be rapidly cooled. As the method of quenching, the molten metal is cast in a water-cooled copper mold or a mold having a large cooling capacity, continuously cast in a water-cooled copper mold, poured into two rotating rolls to make a thin plate, or Examples of the method include atomization with an inert gas.
（実施例） 実施例１ 合金4Kgを真空下で誘導溶解し、水冷銅鋳型内に鋳造
し、Ti等を含有するAl基合金鋳塊を得た。該鋳塊の酸素
量、及び、Ti等の含有量を第１表に示す。該鋳塊のミク
ロ組織を観察したところ、金属間化合物は、針状であ
り、その長手方向の大きさが200μｍ以下の微細なもの
であり、均一に分散していることが確認された。(Example) Example 1 4 kg of an alloy was induction-melted under vacuum and cast in a water-cooled copper mold to obtain an Al-based alloy ingot containing Ti and the like. Table 1 shows the oxygen content and the content of Ti and the like in the ingot. When the microstructure of the ingot was observed, it was confirmed that the intermetallic compound was acicular, and was fine, having a longitudinal size of 200 μm or less, and was uniformly dispersed.
上記鋳塊よりスパッタリングターゲットを採取し、こ
れを用いてスパッタリングし、光ディスクの基板上に厚
さ1000Åの反射膜を形成した。該反射膜のTi等の含有量
を第１表に示す。ターゲットの組成と合金膜の組成とか
略一致していることが判る。A sputtering target was collected from the ingot and sputtered using the sputtering target to form a reflective film having a thickness of 1000 mm on the substrate of the optical disk. Table 1 shows the content of Ti and the like in the reflection film. It can be seen that the composition of the target substantially matches the composition of the alloy film.
上記反射膜形成材の中の実験No.2,6及び８のものにつ
いて、光ディスクを製造し、環境加速試験（温度:105
℃，圧力:1.2atm,湿度:100％RH）を行った。又、純度4N
の純Al製ターゲットを用いて上記と同様の反射膜形成、
光ディスク製造、試験を行った。Optical disks were manufactured for the reflective film forming materials of Experiment Nos. 2, 6 and 8, and an environmental acceleration test (temperature: 105
C., pressure: 1.2 atm, humidity: 100% RH). Also, purity 4N
Reflection film formation similar to the above using pure Al target,
Optical disc production and testing were performed.
これらの試験結果を第２〜３図に示す。純Al製ターゲ
ットを用いた場合は、試験時間の経過に伴い反射率が急
激に低下し、エラレートが著しく増大している。これに
対し、実験No.2,6及び８のものは、反射率の低下が極め
て緩やかであり、エラレートの増大は殆ど認められず、
一定値を示している。The test results are shown in FIGS. When a target made of pure Al was used, the reflectance sharply decreased with the elapse of the test time, and the ellarate increased significantly. On the other hand, in Experiments Nos. 2, 6 and 8, the decrease in reflectance was extremely slow, and the increase in ellarate was hardly observed.
It shows a constant value.
比較例１ 純Al粉末とTi粉末とをＶミキサーにて混合した後、HI
P法により450℃で焼結してスパッタリングターゲット材
を製造し、これを用いて前記実施例１と同様の反射膜形
成を行った。 Comparative Example 1 After mixing pure Al powder and Ti powder with a V mixer,
A sputtering target material was manufactured by sintering at 450 ° C. by the P method, and a reflection film was formed in the same manner as in Example 1 using the sputtering target material.
上記ターゲット材の酸素量及びTi量、及び、反射膜の
Ti量を第２表に示す。該表から判る如く、ターゲットの
Ti量に比し、合金膜のTi量が極めて少ない。The oxygen content and Ti content of the target material, and the reflection film
Table 2 shows the Ti content. As can be seen from the table, the target
The Ti content of the alloy film is extremely small as compared with the Ti content.
実験No.10の反射膜と実施例１の実験No.2の反射膜と
を比較すると、Ti量は同等であるが、前者の反射率は83
％、後者の反射率は60％であり、両者は大幅に異なる。
これは両者の酸素含有量の差に因るものである。Comparing the reflective film of Experiment No. 10 with the reflective film of Experiment No. 2 of Example 1, the amount of Ti is the same, but the reflectance of the former is 83.
% And the reflectance of the latter is 60%, which are significantly different.
This is due to the difference in oxygen content between the two.
実施例２ Al−2at％Hf合金10Kgを誘導溶解し、この溶湯をガス
アトマイズして得られた急冷粉末を堆積させることによ
り、Al3Hfの微細析出物が均一に分散した組織を有する
薄板が得られた。これをターゲット板に加工し、スパッ
タリングに用いると、Al−Hfが均一に分布した反射膜が
得られた。Induces dissolved Example 2 Al-2at% Hf alloy 10 Kg, by depositing a quenched powder obtained by the gas atomizing the melt, resulting thin plate having a tissue fine precipitates of Al 3 Hf are uniformly dispersed Was done. When this was processed into a target plate and used for sputtering, a reflective film in which Al-Hf was uniformly distributed was obtained.
（発明の効果） 本発明に係る光メディア用スパッタリングターゲット
材によれば、所定の組成の合金膜（Al基合金製の反射
膜）を安定して得ることができるようになる。しかも、
低酸素量で、高反射率の合金膜が確実に得られるように
なる。従って、低酸素量で反射率が高く、また、耐食性
に優れ、劣化し難く、反射率の経年的低下を生じ難い反
射膜が得られ、そのため光メディアのデータの保存性を
向上し、信頼性を高めることができるようになる。(Effect of the Invention) According to the sputtering target material for optical media according to the present invention, an alloy film (reflection film made of an Al-based alloy) having a predetermined composition can be stably obtained. Moreover,
An alloy film having a low oxygen content and a high reflectance can be reliably obtained. Therefore, a reflection film having a low oxygen content, a high reflectance, excellent corrosion resistance, hardly deteriorating, and hardly causing deterioration of the reflectance over time can be obtained, thereby improving the preservability of optical media data and improving reliability. Can be increased.
第１図は、Al基溶製合金からなるスパッタリングターゲ
ット材のTi,Zr,Hfの含有量と、該ターゲット材のスパッ
タリングにより得られる反射膜の反射率との関係を示す
図、第２図は，実施例１に係る光ディスクの環境加速試
験での試験時間と反射膜の反射率との関係を示す図、第
３図は，前記加速試験での試験時間とエラレートとの関
係を示す図である。FIG. 1 is a diagram showing the relationship between the content of Ti, Zr, and Hf in a sputtering target material made of an Al-based ingot alloy and the reflectance of a reflective film obtained by sputtering the target material. FIG. 3 is a diagram showing the relationship between the test time in the environmental acceleration test of the optical disc according to the first embodiment and the reflectance of the reflective film, and FIG. 3 is a diagram showing the relationship between the test time in the accelerated test and the error rate. .
───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 昭63−145771（ＪＰ，Ａ) 特開 平３−1338（ＪＰ，Ａ) (58)調査した分野(Int.Cl.6，ＤＢ名) C23C 14/34 ──────────────────────────────────────────────────続 き Continuation of the front page (56) References JP-A-63-145771 (JP, A) JP-A-3-1338 (JP, A) (58) Fields investigated (Int. Cl. 6 , DB name) C23C 14/34
Claims (2)
種以上を0.5〜10at％含有するAl基溶製合金より成ると
ともに、該IVa族元素のAlとの金属間化合物がAlマトリ
ックス中に均一に分散しており、更に前記Al基溶製合金
の酸素含有量が200ppm以下であることを特徴とする光メ
ディア用スパッタリングターゲット溶製材。1. One or two of Ti, Zr, Hf of Group IVa of the Periodic Table of the Elements
And an intermetallic compound of the IVa group element with Al is uniformly dispersed in an Al matrix, and the oxygen of the Al-based alloy is further reduced. Melting material for sputtering target for optical media, wherein the content is 200 ppm or less.
の長手方向の大きさが200μｍ以下である請求項１に記
載の光メディア用スパッタリングターゲット溶製材。2. The ingot for a sputtering target for optical media according to claim 1, wherein the intermetallic compound is acicular and has a size in the longitudinal direction of 200 μm or less.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2121515A JP2928330B2 (en) | 1990-05-11 | 1990-05-11 | Melting material for sputtering target for optical media |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2121515A JP2928330B2 (en) | 1990-05-11 | 1990-05-11 | Melting material for sputtering target for optical media |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0417670A JPH0417670A (en) | 1992-01-22 |
| JP2928330B2 true JP2928330B2 (en) | 1999-08-03 |
Family
ID=14813121
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2121515A Expired - Lifetime JP2928330B2 (en) | 1990-05-11 | 1990-05-11 | Melting material for sputtering target for optical media |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2928330B2 (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5500301A (en) | 1991-03-07 | 1996-03-19 | Kabushiki Kaisha Kobe Seiko Sho | A1 alloy films and melting A1 alloy sputtering targets for depositing A1 alloy films |
| CA2659516A1 (en) * | 2006-08-01 | 2008-02-07 | Ricoh Company Ltd. | Recordable optical recording medium and recording method thereof |
| CN103849839A (en) * | 2012-12-04 | 2014-06-11 | 光洋应用材料科技股份有限公司 | Aluminum-titanium alloy sputtering target material and production method thereof |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0719396B2 (en) * | 1985-12-09 | 1995-03-06 | ソニー株式会社 | Information recording medium |
| JPS63145771A (en) * | 1986-12-10 | 1988-06-17 | Kasei Naoetsu:Kk | Sputtering target |
| JPS63224050A (en) * | 1987-03-13 | 1988-09-19 | Sanyo Electric Co Ltd | Optical disk |
| JPS63312975A (en) * | 1987-06-17 | 1988-12-21 | Kasei Naoetsu:Kk | Aluminum sputtering target |
| JPH087880B2 (en) * | 1987-12-23 | 1996-01-29 | 三菱化学株式会社 | Phase change recording medium |
| JPH0258742A (en) * | 1988-08-23 | 1990-02-27 | Tonen Corp | Optical disk |
| JPH031338A (en) * | 1989-05-30 | 1991-01-08 | Asahi Chem Ind Co Ltd | Optical recording medium |
-
1990
- 1990-05-11 JP JP2121515A patent/JP2928330B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0417670A (en) | 1992-01-22 |
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