JP2924457B2 - Heat dissipation structural member made of tungsten-based sintered alloy for semiconductor device - Google Patents
Heat dissipation structural member made of tungsten-based sintered alloy for semiconductor deviceInfo
- Publication number
- JP2924457B2 JP2924457B2 JP15296892A JP15296892A JP2924457B2 JP 2924457 B2 JP2924457 B2 JP 2924457B2 JP 15296892 A JP15296892 A JP 15296892A JP 15296892 A JP15296892 A JP 15296892A JP 2924457 B2 JP2924457 B2 JP 2924457B2
- Authority
- JP
- Japan
- Prior art keywords
- particles
- alloy
- based sintered
- tungsten
- structural member
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
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- Powder Metallurgy (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Description
【０００１】[0001]
【産業上の利用分野】この発明は、高強度と低熱膨張係
数を有し、かつ熱伝導性も良好な半導体装置のタングス
テン（以下、Ｗで示す）基焼結合金製放熱構造部材に関
するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a heat-dissipating structural member made of a tungsten (hereinafter referred to as W) -based sintered alloy for a semiconductor device having high strength and a low coefficient of thermal expansion and good thermal conductivity. is there.
【０００２】[0002]
【従来の技術】従来、一般に半導体装置のヒートシンク
材や基板などの放熱構造部材には低熱膨張係数と良好な
熱伝導性が要求されることから、これら部材の製造に、
前記特性を具備した、例えば特開昭５９−１３６９３８
号公報に記載されるＷ基焼結合金が用いられている。上
記従来Ｗ基焼結合金製放熱構造部材は、原料粉末とし
て、Ｗ粉末、Ｍｏ粉末、Ｃｕ粉末、およびＮｉ粉末を用
い、これら原料粉末を、重量％で（以下、％は重量％を
示す）、 Ｃｕ：５〜２０％、 Ｎｉ：０．０２〜２％、 ＷまたはＭｏ：残り、 の配合組成に配合し、以下いずれも通常の条件で、混合
し、所定形状の圧粉体に成形し、この圧粉体を焼結する
ことにより製造されるものである。2. Description of the Related Art Conventionally, heat dissipation structural members such as heat sink materials and substrates of semiconductor devices are generally required to have a low coefficient of thermal expansion and good thermal conductivity.
For example, Japanese Patent Application Laid-Open No. 59-136938 has the above-mentioned characteristics.
No. 6,009,045, the W-based sintered alloy described in Japanese Patent Application Laid-Open Publication No. H10-209,873 is used. The conventional heat dissipation structural member made of a W-based sintered alloy uses W powder, Mo powder, Cu powder, and Ni powder as raw material powders, and these raw material powders are expressed in weight% (hereinafter,% indicates weight%). , Cu: 5 to 20%, Ni: 0.02 to 2%, W or Mo: remaining, and the following composition is mixed under normal conditions to form a green compact of a predetermined shape. This is manufactured by sintering this green compact.
【０００３】[0003]
【発明が解決しようとする課題】一方、近年の半導体装
置の高集積化はめざましく、これに伴ない、半導体装置
の放熱構造部材であるヒートシンク材や基板にも軽量化
および薄肉化が強く要求されているが、上記の従来Ｗ基
焼結合金製放熱構造部材は、強度が不十分であるため
に、これらの要求に満足に対応することができない。On the other hand, in recent years, high integration of semiconductor devices has been remarkable, and accordingly, heat sink materials and substrates, which are heat dissipation structural members of semiconductor devices, have been strongly required to be reduced in weight and thickness. However, the above-mentioned conventional heat-dissipating structural member made of a W-based sintered alloy cannot satisfy these requirements satisfactorily because of its insufficient strength.
【０００４】そこで、本発明者等は、上述のような観点
から、軽量化および薄肉化が可能な高強度を有する半導
体装置の放熱構造部材を開発すべく、特に低熱膨張係数
と良好な熱伝導性の確保が可能なＷ基焼結合金に着目し
研究を行なった結果、半導体装置の放熱構造部材を、Ｗ
粒子と、このＷ粒子との合量に占める割合で０．５〜３
０％のＭｏ粒子との混合粒子（前記Ｗ粒子およびＭｏ粒
子に若干のＮｉが合金化した状態になっている）同志が
相互に隣接接合してなる骨格構造を有し、この骨格構造
部分の割合が全体に占める割合で８４〜８８％を占め、
残りが前記混合粒子間を埋めるＣｕ合金からなるととも
に、前記Ｃｕ合金が、実質的に、 Ｎｉ：２０〜３０％、 Ｃｕ：残り、 の組成を有してなるＷ基焼結合金で構成すると、この結
果のＷ基焼結合金製放熱構造部材は、上記骨格構造によ
って低熱膨張係数が確保され、かつこの骨格構造とこれ
を埋める上記Ｃｕ合金によって一般と高い強度をもつよ
うになるほか、前記Ｃｕ合金によって良好な熱伝導性も
具備するようになるという研究結果を得たのである。[0004] In view of the above, the present inventors have developed a heat radiation structural member for a semiconductor device having a high strength which can be reduced in weight and thickness. As a result of research focusing on a W-based sintered alloy capable of ensuring heat resistance, the heat dissipation structural member of a semiconductor device was replaced with a W-based sintered alloy.
0.5 to 3 as a percentage of the total amount of the particles and the W particles.
0% Mo particles and a mixed particle (the W particles and the Mo particles are in a state in which a small amount of Ni is alloyed) have a skeleton structure in which adjacent particles are joined to each other. The ratio accounts for 84-88% of the total,
The remainder is composed of a Cu alloy that fills the mixed particles, and the Cu alloy is substantially composed of a W-based sintered alloy having a composition of: Ni: 20 to 30%, Cu: residual, The resulting heat-dissipating structural member made of a W-based sintered alloy has a low coefficient of thermal expansion secured by the skeletal structure, and has a generally high strength by the skeletal structure and the Cu alloy filling the same. The research results show that the alloy also has good thermal conductivity.
【０００５】この発明は、上記の研究結果にもとづいて
なされたものであって、Ｗ粒子と、このＷ粒子との合量
に占める割合で０．５〜３０％のＭｏ粒子との混合粒子
同志が相互に隣接接合してなる骨格構造を有し、この骨
格構造部分の割合が全体に占める割合で８４〜８８％を
占め、残りが前記混合粒子間を埋めるＣｕ合金からなる
とともに、前記Ｃｕ合金が、実質的に、 Ｎｉ：２０〜３０％、 Ｃｕ：残り、 の組成を有してなるＷ基焼結合金で構成してなる半導体
装置のＷ基焼結合金製放熱構造部材に特徴を有するもの
である。The present invention has been made on the basis of the above research results, and is a mixture of W particles and 0.5 to 30% Mo particles in the total amount of the W particles. Has a skeletal structure formed by adjoining each other, and the proportion of the skeletal structure portion occupies 84 to 88% of the whole, and the rest is made of a Cu alloy filling the mixed particles and the Cu alloy Is characterized by a heat-dissipating structural member made of a W-based sintered alloy of a semiconductor device substantially composed of a W-based sintered alloy having a composition of Ni: 20 to 30% and Cu: remaining. Things.
【０００６】つぎに、この発明の放熱構造部材における
骨格構造部分およびＣｕ合金に関して、上記の通りに数
値限定した理由を説明する。 （ａ） 骨格構造部分の割合 その割合が８４％未満では、混合粒子間の相互接合が十
分に行われず、この結果強固な骨格構造の形成が困難と
なり、所望の高強度と低熱膨張係数を確保することがで
きなくなり、一方その割合が８８％を越えると、相対的
にＣｕ合金の割合が少なくなりすぎて、強度および熱伝
導性が低下するようになることから、その割合を８４〜
８８％と定めた。Next, the reason why the numerical values of the skeletal structure and the Cu alloy in the heat radiation structural member of the present invention are limited as described above will be described. (A) Ratio of skeleton structure portion If the ratio is less than 84%, mutual bonding between mixed particles is not sufficiently performed, and as a result, formation of a strong skeleton structure becomes difficult, and desired high strength and low thermal expansion coefficient are secured. On the other hand, if the ratio exceeds 88%, the ratio of the Cu alloy becomes relatively too small, and the strength and the thermal conductivity are reduced.
It was set at 88%.
【０００７】（ｂ） Ｗ粒子に対するＭｏ粒子の割合 Ｍｏ粒子には、Ｗ粒子との共存において強固な骨格構造
を形成し、もって強度を向上させる作用があるが、その
割合がＷ粒子との合量に占める割合で（以下同じ）０．
５％未満では前記作用に所望の効果が得られず、一方そ
の割合が３０％を越えても前記作用により一段の向上効
果が現われないことから、その割合を０．５〜３０％と
定めた。(B) Ratio of Mo particles to W particles Mo particles have a function of forming a strong skeleton structure in coexistence with W particles and thereby improving the strength. In terms of percentage of the amount (the same applies hereinafter)
If it is less than 5%, a desired effect cannot be obtained in the above-mentioned operation, and if the ratio exceeds 30%, no further improvement effect is exhibited by the above-mentioned operation. Therefore, the ratio is set to 0.5 to 30%. .
【０００８】（ｃ） Ｃｕ合金のＮｉ含有量 Ｃｕ合金には、上記の通り骨格を形成する混合粒子間に
存在して熱伝導性を高める作用があるほか、Ｃｕ合金中
のＮｉには、Ｗ粒子およびＭｏ粒子との界面で、これと
合金化して粒子間の結合力を高めると共に、Ｃｕ合金自
体の強度を高め、もって前記骨格構造と相まって部材の
強度を向上させる作用があるが、その含有量が２０％以
下では所望の高強度を確保することができず、一方その
含有量が３０％を越えると熱伝導性に低下傾向が現われ
るようになることから、その含有量を２０〜３０％と定
めた。(C) Ni Content of Cu Alloy The Cu alloy has a function of increasing the thermal conductivity by being present between the mixed particles forming the skeleton as described above, and Ni in the Cu alloy has a W content. At the interface between the particles and the Mo particles, the alloying with the particles enhances the bonding force between the particles, increases the strength of the Cu alloy itself, and thus has the effect of improving the strength of the member in combination with the skeleton structure. If the amount is less than 20%, the desired high strength cannot be ensured. On the other hand, if the content exceeds 30%, the thermal conductivity tends to decrease. It was decided.
【０００９】[0009]
【実施例】つぎに、この発明の放熱構造部材を実施例に
より具体的に説明する。原料粉末として、それぞれ表１
に示される平均粒径を有するＷ粉末、Ｍｏ粉末、および
Ｃｕ合金粉末を用意し、これら原料粉末を同じく表１に
示される配合組成に配合し、ボールミルで７２時間湿式
混合した後、３ton ／cm2 の圧力で圧粉体にプレス成形
し、ついでこの圧粉体を１３５０〜１４００℃の範囲内
の所定温度に６０分間保持の条件で焼結することによ
り、実質的に配合組成と同じ成分組成、並びに平面：２
５mm×２５mm、厚さ：１mmの寸法をもった半導体装置の
基板として用いられる本発明Ｗ基焼結合金製放熱構造部
材（以下、本発明放熱構造部材という）１〜４、並びに
骨格構造部分の割合またはＣｕ合金中のＮｉ含有量がこ
の発明の範囲から外れたＷ基焼結合金で構成された比較
Ｗ基焼結合金製放熱構造部材（以下、比較放熱構造部材
という）１〜４をそれぞれ製造した。Next, the heat radiation structural member of the present invention will be specifically described with reference to examples. Table 1
A W powder, a Mo powder, and a Cu alloy powder having the average particle diameters shown in Table 1 were prepared, and these raw material powders were similarly blended into the blending composition shown in Table 1 and wet-mixed for 72 hours by a ball mill. By pressing into a green compact at a pressure of 2 and then sintering the green compact at a predetermined temperature in the range of 1350 to 1400 ° C. for 60 minutes, the component composition substantially the same as the compounding composition , And plane: 2
Heat-dissipating structural members made of W-based sintered alloy of the present invention (hereinafter referred to as heat-dissipating structural members of the present invention) 1 to 4 used as a substrate of a semiconductor device having dimensions of 5 mm × 25 mm and a thickness of 1 mm; Comparative W-based sintered alloy heat-dissipating structural members (hereinafter referred to as comparative heat-dissipating structural members) 1 to 4 each composed of a W-based sintered alloy whose ratio or Ni content in the Cu alloy is out of the range of the present invention, Manufactured.
【００１０】[0010]
【表１】 [Table 1]
【００１１】ついで、この結果得られた各種の放熱構造
部材について、強度を評価する目的で引張強さを測定
し、また熱膨張係数および熱伝導率も測定した。これら
の測定結果を表１に示した。また、図１には、本発明放
熱構造部材２の金属顕微鏡による組織写真（４００倍）
を示した。Next, the tensile strength of the various heat radiation structural members obtained as a result was measured for the purpose of evaluating the strength, and the coefficient of thermal expansion and the thermal conductivity were also measured. Table 1 shows the results of these measurements. FIG. 1 is a micrograph of a structure of the heat radiation structural member 2 of the present invention, taken with a metallographic microscope (at a magnification of 400).
showed that.
【００１２】[0012]
【発明の効果】表１および図１に示される結果から、本
発明放熱構造部材１〜４は、いずれもＷおよびＭｏ粒子
同志が相互に隣接接合した骨格構造を有し、かつこの骨
格構造がＣｕ合金中のＮｉによって一層強化された組織
を有すると共に、Ｃｕ合金自体もＮｉの含有によって高
強度を有するので、部材強度はきわめて高いものとなる
ほか、熱膨張係数も小さいものとなっており、さらにＷ
およびＭｏ粒子間を埋めるＣｕ合金によって良好な熱伝
導性も具備するのに対して、比較放熱構造部材１〜４に
見られるように、これを構成する骨格構造部分の割合あ
るいはＣｕ合金のＮｉ含有量がこの発明の範囲から外れ
ると、上記の特性のうちの少なくともいずれかの特性が
相対的に劣ったものになることが明らかである。From the results shown in Table 1 and FIG. 1, all of the heat radiation structural members 1 to 4 of the present invention have a skeletal structure in which W and Mo particles are mutually adjacently joined, and this skeletal structure is In addition to having a structure further strengthened by Ni in the Cu alloy, the Cu alloy itself also has high strength due to the inclusion of Ni, so that the member strength becomes extremely high, and the thermal expansion coefficient is also small, Further W
And the Cu alloy that fills the space between the Mo particles also has good thermal conductivity. On the other hand, as can be seen from the comparative heat dissipation structural members 1 to 4, the proportion of the skeletal structure part constituting this or the Ni content of the Cu alloy Clearly, amounts outside the scope of the invention will result in relatively poor at least one of the above properties.
【００１３】上述のように、この発明のＷ基焼結合金製
放熱構造部材は、高強度と低熱膨張係数、さらに良好な
熱伝導性を有するので、これの軽量化および薄肉化に十
分対応することができ、半導体装置の高集積化に大いに
寄与するものである。As described above, the heat-dissipating structural member made of a W-based sintered alloy according to the present invention has a high strength, a low coefficient of thermal expansion, and a good thermal conductivity. This greatly contributes to high integration of the semiconductor device.
【図１】本発明放熱構造部材２の金属顕微鏡による組織
写真である。FIG. 1 is a structural photograph of a heat radiation structural member 2 of the present invention, taken with a metallographic microscope.
Claims (1)
粒子との合量に占める割合で０．５〜３０重量％のモリ
ブテン粒子との混合粒子同志が相互に隣接接合してなる
骨格構造を有し、この骨格構造部分の割合が全体に占め
る割合で８４〜８８重量％を占め、残りが前記混合粒子
間を埋めるＣｕ合金からなるとともに、前記Ｃｕ合金
が、実質的に、 Ｎｉ：２０〜３０重量％、 Ｃｕ：残り、 の組成を有してなるタングステン基焼結合金で構成した
ことを特徴とする半導体装置のタングステン基焼結合金
製放熱構造部材。1. A skeletal structure in which mixed particles of tungsten particles and molybdenum particles in a proportion of 0.5 to 30% by weight, based on the total amount of the tungsten particles, are bonded to each other adjacent to each other. The proportion of the skeleton structure portion accounts for 84 to 88% by weight of the whole, and the rest is made of a Cu alloy filling the mixed particles, and the Cu alloy is substantially composed of Ni: 20 to 30% by weight, Cu: a heat-dissipating structural member made of a tungsten-based sintered alloy for a semiconductor device, comprising a tungsten-based sintered alloy having the following composition:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15296892A JP2924457B2 (en) | 1992-05-20 | 1992-05-20 | Heat dissipation structural member made of tungsten-based sintered alloy for semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15296892A JP2924457B2 (en) | 1992-05-20 | 1992-05-20 | Heat dissipation structural member made of tungsten-based sintered alloy for semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH05326766A JPH05326766A (en) | 1993-12-10 |
| JP2924457B2 true JP2924457B2 (en) | 1999-07-26 |
Family
ID=15552093
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15296892A Expired - Lifetime JP2924457B2 (en) | 1992-05-20 | 1992-05-20 | Heat dissipation structural member made of tungsten-based sintered alloy for semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2924457B2 (en) |
-
1992
- 1992-05-20 JP JP15296892A patent/JP2924457B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH05326766A (en) | 1993-12-10 |
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