JP2920605B2 - Surface treatment method - Google Patents
Surface treatment methodInfo
- Publication number
- JP2920605B2 JP2920605B2 JP7154741A JP15474195A JP2920605B2 JP 2920605 B2 JP2920605 B2 JP 2920605B2 JP 7154741 A JP7154741 A JP 7154741A JP 15474195 A JP15474195 A JP 15474195A JP 2920605 B2 JP2920605 B2 JP 2920605B2
- Authority
- JP
- Japan
- Prior art keywords
- treatment
- plasma
- mask
- workpiece
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
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- Plasma Technology (AREA)
- Physical Vapour Deposition (AREA)
Description
【0001】[0001]
【産業上の利用分野】本発明は、金属製の被処理物、特
に、真空チャンバ,真空チャンバと減圧ポンプとの連結
部品等の減圧系装置の構成部品,及び成膜工程で用いる
マスクといった減圧系装置内で使用する治具等の表面を
処理する方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an object to be processed made of metal, in particular, a vacuum chamber, a component of a vacuum system such as a connecting part of a vacuum chamber and a vacuum pump, and a vacuum such as a mask used in a film forming process. The present invention relates to a method for treating a surface of a jig or the like used in a system device.
【0002】[0002]
【従来の技術及び発明が解決しようとする課題】液晶パ
ネルの製造又はLSIの製造等における成膜工程にあっ
ては、オーステナイト系ステンレス鋼等のマスクを用い
て成膜対象外の領域のマスキングを行っている。このマ
スクは高価であるため、マスクに付着した膜を除去する
再生処理を定期的に実施してマスクを再利用している。2. Description of the Related Art In a film forming process in the manufacture of a liquid crystal panel or an LSI, masking of a region not to be formed using an austenitic stainless steel mask or the like is performed. Is going. Since this mask is expensive, the mask is reused by periodically performing a regeneration process for removing a film attached to the mask.
【0003】この再生処理の一方法にマスクを薬剤で洗
浄する化学的処理があるが、薬剤に対するマスクの耐食
性が低いという問題,使用済薬剤の処理の問題,及び化
学的処理の効率が低いという問題があった。これらの問
題のため、マスク表面を機械研磨又はブラスト処理する
物理的処理が実施されている。しかしながら、このよう
な物理的処理を施すと、オーステナイト系ステンレス鋼
ではその表面部分がマルテンサイト化した機械加工変質
層が形成され、加工硬化を生じ、また耐食性が低下する
という問題があった。[0003] One method of this regeneration treatment is a chemical treatment of cleaning the mask with a chemical. However, there is a problem that the corrosion resistance of the mask to the chemical is low, a problem with the treatment of the used chemical, and a low efficiency of the chemical treatment. There was a problem. Due to these problems, a physical treatment of mechanically polishing or blasting the mask surface has been performed. However, when such a physical treatment is performed, the austenitic stainless steel has a problem that a mechanically deteriorated layer in which the surface portion is martensitized is formed, work hardening occurs, and corrosion resistance is reduced.
【0004】一方、再生処理したマスクを成膜装置で再
使用する場合、該マスクは成膜装置に備えられた真空チ
ャンバ内に配置されるので、真空チャンバを減圧すると
きの立ち上がり速度を高くするために、マスク表面に付
着した水分を除去しておく必要がある。マスク表面に付
着した水分を除去するには、通常、マスクをベーキング
炉内に搬入し、数百℃でこれを加熱する加熱処理が行わ
れていた。しかし、ベーキング炉のサイズによって加熱
処理できるマスクのサイズが制限されるという問題があ
った。一方、サイズが大きいマスクの加熱処理にも対応
すべくベーキング炉のサイズを大きくすると炉に要する
コストが高いという問題があった。On the other hand, when a regenerated mask is reused in a film forming apparatus, the mask is placed in a vacuum chamber provided in the film forming apparatus, so that the rising speed when depressurizing the vacuum chamber is increased. Therefore, it is necessary to remove moisture adhering to the mask surface. In order to remove the moisture adhering to the mask surface, usually, a heat treatment of carrying the mask into a baking furnace and heating it at several hundred degrees Celsius has been performed. However, there is a problem that the size of the mask that can be subjected to the heat treatment is limited by the size of the baking furnace. On the other hand, if the size of the baking furnace is increased to cope with the heat treatment of a mask having a large size, there is a problem that the cost required for the furnace is high.
【0005】また、マスク表面に残留する微量の有機物
を除去する方法として、減圧下,オゾンを所定流量で供
給し、これに紫外線(UV)を照射することによってオ
ゾンを分解し、この化学的に活性な分解物によって有機
物を分解するUV−オゾン処理が知られている。しか
し、この方法は減圧下で行うため、真空チャンバのサイ
ズによって処理可能なマスクのサイズが制限されるとい
う問題があった。Further, as a method of removing a trace amount of organic substances remaining on the mask surface, ozone is supplied at a predetermined flow rate under reduced pressure, and the ozone is decomposed by irradiating ultraviolet rays (UV) to chemically decompose the ozone. UV-ozone treatment for decomposing organic substances by active decomposition products is known. However, since this method is performed under reduced pressure, there is a problem that the size of a mask that can be processed is limited by the size of the vacuum chamber.
【0006】更に、マスク表面に形成された機械加工変
質層であるマルテンサイト層は、前述したベーキング炉
による水分除去のための加熱処理,及びUV−オゾン処
理によってもその状態を維持しており、これらの処理に
よってはマスクの品質の低下は避けられない。[0006] Further, the martensite layer, which is a mechanically deteriorated layer formed on the mask surface, maintains its state by the heat treatment for removing moisture by the above-described baking furnace and the UV-ozone treatment. These processes inevitably reduce the quality of the mask.
【0007】本発明はかかる事情に鑑みてなされたもの
であって、その目的とするところは被処理物を物理的に
処理した後、プラズマ処理を施すことによって、被処理
物表面の有機物及び水分を除去すると共に機械加工変質
層を元の組織に変態させて被処理物の品質を維持し得る
表面処理方法を提供することにある。The present invention has been made in view of the above circumstances, and an object of the present invention is to physically treat an object to be treated and then perform a plasma treatment so that organic matter and water on the surface of the object are treated. It is an object of the present invention to provide a surface treatment method capable of maintaining the quality of an object to be processed by removing the material and transforming the mechanically damaged layer into the original structure.
【0008】[0008]
【課題を解決するための手段】本発明に係る表面処理方
法は、金属製の被処理物の表面を処理する方法であっ
て、前記被処理物の表面を機械研磨及び/又はブラスト
処理する工程と、被処理物の表面に、その周囲にシール
ドガスによるガスカーテンを形成しつつ、温度を180
0℃〜2000℃に制御したプラズマジェットを放射す
る工程とを含むことを特徴とする。A surface treatment method according to the present invention is a method for treating a surface of a metal object to be processed, wherein the surface of the object is mechanically polished and / or blasted. > Processing process and sealing on the surface of the workpiece
While forming a gas curtain with degas,
Irradiating a plasma jet controlled at 0 ° C to 2000 ° C.
【0009】[0009]
【作用】本発明の表面処理方法にあっては、金属製の被
処理物の表面を、機械研磨及び/又はブラスト処理等の
物理的な処理によって、汚染物質,又は減圧系装置に用
いられる部品の製造工程で付着した汚れの殆どを除去す
る。そして、被処理物の表面に1800℃〜2000℃
のプラズマジェットを放射することによって、被処理物
の表面に残留する有機物を分解・ガス化して揮発除去
し、また水分を蒸発させると共に、物理的な処理によっ
て被処理物の表面に生じた機械加工変質層を、プラズマ
の加熱による軟化焼きなまし効果によって元の組織に変
態せしめ得る。In the surface treatment method of the present invention, the surface of the metallic article to be treated, depending on the physical treatment such as mechanical polishing and / or blasting, used in contaminant, or depressurization system device Most of the dirt attached in the part manufacturing process is removed. Then, 1800 ° C. to 2000 ° C.
By radiating the plasma jet, the organic matter remaining on the surface of the object to be treated is decomposed and gasified to volatilize and remove, and the water is evaporated, and the mechanical processing generated on the surface of the object by the physical treatment the affected layer can brought transformation to the original tissue by softening annealing effect of heating of the plasma.
【0010】[0010]
【実施例】以下本発明をその実施例を示す図面に基づい
て具体的に説明する。図1は本発明に係る表面処理方法
の実施態様を示す側断面図であり、図中Sは金属製の被
処理物である。被処理物Sの表面には、バフ研磨等の機
械研磨及び/又はガラスビーズブラスト(GBB)又は
アルミナブラスト等のブラスト処理が施してあり、これ
らの物理的処理によって被処理物はその表面の汚れの殆
どを除去してある。DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be specifically described below with reference to the drawings showing the embodiments. FIG. 1 is a side sectional view showing an embodiment of a surface treatment method according to the present invention, in which S is a metal workpiece. The surface of the workpiece S has been subjected to mechanical polishing such as buffing and / or blasting such as glass bead blasting (GBB) or alumina blasting. Most of them have been removed.
【0011】被処理物Sはステージ20上に載置してあ
り、該ステージ20によって被処理物Sは水平方向であり
直交するx軸及びy軸方向に移動される。被処理物Sの
上方には被処理物Sに対向してプラズマ照射用のヘッド
1が配置してあり、該ヘッド1は外ノズル2及び内ノズ
ル6を備える2重構造になっている。外ノズル2は略円
筒状をしており、その先端部分には開口部5に向かうに
つれて内径が徐々に小さくなった肉厚部3が形成してあ
る。この肉厚部3の内部には環状の通水路4が設けてあ
り、通水路4内には冷却水が通流されるようになってい
る。An object S is placed on a stage 20. The stage 20 moves the object S in the horizontal and orthogonal x-axis and y-axis directions. A plasma irradiation head 1 is disposed above the workpiece S so as to face the workpiece S, and the head 1 has a double structure including an outer nozzle 2 and an inner nozzle 6. The outer nozzle 2 has a substantially cylindrical shape, and a thick portion 3 whose inner diameter gradually decreases toward the opening 5 is formed at the tip portion. An annular water passage 4 is provided inside the thick portion 3, and cooling water flows through the water passage 4.
【0012】外ノズル2内には、該外ノズル2の内面形
状と同じ形状の筒状であり導電製の内ノズル6が、その
外周面と外ノズル2の内周面との間に所定の間隙を形成
するように装入してあり、内ノズル6の開口部7の先端
は外ノズル2の開口部5の先端と上下方向の位置を一致
させてある。外ノズル2と内ノズル6との間隙はN2,
Ar等のシールドガスを通流させるガス通流路8になっ
ており、内ノズル6内はN2 ,He−O2 等のプラズマ
生成用のガスを通流させる作動ガス通流路9になってい
る。Inside the outer nozzle 2, a cylindrical inner conductive nozzle 6 having the same shape as the inner surface of the outer nozzle 2 is provided with a predetermined distance between its outer peripheral surface and the inner peripheral surface of the outer nozzle 2. The tip of the opening 7 of the inner nozzle 6 is aligned with the tip of the opening 5 of the outer nozzle 2 in the vertical direction. The gap between the outer nozzle 2 and the inner nozzle 6 is N 2 ,
A gas passage 8 through which a shielding gas such as Ar flows is provided, and an inside of the inner nozzle 6 is a working gas passage 9 through which a gas for plasma generation such as N 2 or He—O 2 is passed. ing.
【0013】内ノズル6内部には尖鋭な棒状の電極10が
内ノズル6の中心軸上に配置してあり、該電極10の先端
は内ノズル6の開口部7から所定距離を隔てて配してあ
る。この電極10は直流電源15の陰極に接続してあり、直
流電源15の陽極は内ノズル6に接続してある。A sharp rod-shaped electrode 10 is arranged inside the inner nozzle 6 on the center axis of the inner nozzle 6, and the tip of the electrode 10 is arranged at a predetermined distance from the opening 7 of the inner nozzle 6. It is. The electrode 10 is connected to the cathode of a DC power supply 15, and the anode of the DC power supply 15 is connected to the inner nozzle 6.
【0014】このようなヘッド1にあっては、通水路4
内に冷却水を通流してヘッド1の先端部分を冷却し、ま
たガス通流路8にシールドガスを供給して外ノズル2の
開口部5から被処理物Sの表面に吹きつけてガスカーテ
ンを形成する。そして、直流電源15から所要の出力で電
極10及び内ノズル6に印加してアーク放電させ、作動ガ
ス通流路9に例えば窒素ガスを所要の流量で導入し、ア
ーク放電によってプラズマを生成し、内ノズル6の開口
部7からプラズマジェットとして被処理物Sの表面に放
射する。In such a head 1, the water passage 4
Cooling water flows through the inside to cool the tip of the head 1, and also supplies a shielding gas to the gas passage 8 and blows the gas from the opening 5 of the outer nozzle 2 to the surface of the workpiece S to blow the gas curtain. To form Then, a required output from the DC power supply 15 is applied to the electrode 10 and the inner nozzle 6 to cause arc discharge, for example, nitrogen gas is introduced into the working gas passage 9 at a required flow rate, and plasma is generated by the arc discharge. The plasma is emitted from the opening 7 of the inner nozzle 6 to the surface of the workpiece S as a plasma jet.
【0015】ヘッド1は上下方向に移動可能になってお
り、ヘッド1と被処理物Sとの間を予め試験によって定
めた距離になるようにヘッド1の高さを調整することに
よって、プラズマジェットの温度を略1800℃〜20
00℃の範囲に制御する。The head 1 is movable in the vertical direction. The height of the head 1 is adjusted so that the distance between the head 1 and the processing object S is determined in advance by a test, so that the plasma jet can be performed. Temperature of about 1800 ° C to 20
Control within the range of 00 ° C.
【0016】被処理物Sの表面はプラズマジェットによ
って、その表面に付着した水分が蒸発し、有機物が分解
されて除去される一方、プラズマジェットを覆うシール
ドガスによってプラズマジェットが放射された被処理物
Sの表面の酸化が防止される。また、前述したプラズマ
ジェットの温度範囲では被処理物Sの表面が軟化焼きな
まし効果によって結晶組織変化し、物理的処理によって
生じた機械加工変質層が元の組織に変態する。The surface of the object S is treated by the plasma jet to evaporate the moisture attached to the surface and decompose and remove the organic matter. On the other hand, the object to which the plasma jet is emitted by the shielding gas covering the plasma jet Oxidation of the surface of S is prevented. In the above-described temperature range of the plasma jet, the surface of the workpiece S undergoes a crystal structure change due to the softening annealing effect, and the mechanically damaged layer generated by the physical treatment is transformed into the original structure.
【0017】次に本発明に係る表面処理方法を実施した
結果について説明する。被処理物としてSUS304製
の成膜用マスキング治具を用い、その表面に付着した膜
をバフ研磨及びGBB処理により除去した。この被処理
物を図1に示した装置にセットし、作動ガスとして窒素
ガスを25L/minで供給し、出力20Aで生成した
プラズマジェットを、ヘッドと被処理物との距離が4〜
5cmとなるように調整してヘッドから被処理物の表面
に放射し、処理速度1〜2cm/secでプラズマ処理
を行った。そして、プラズマ処理の前後の被処理物の表
面について、金属結晶組織検査,ガス放出特性,及び接
触角測定によりそれぞれ評価した。Next, the results of implementing the surface treatment method according to the present invention will be described. Using a SUS304 film-forming masking jig as an object to be processed, the film adhered to the surface was removed by buff polishing and GBB processing. The workpiece is set in the apparatus shown in FIG. 1, nitrogen gas is supplied as a working gas at a rate of 25 L / min, and a plasma jet generated at an output of 20 A is applied at a distance between the head and the workpiece of 4 to 4.
It was adjusted to 5 cm and emitted from the head to the surface of the object to be processed, and plasma processing was performed at a processing speed of 1 to 2 cm / sec. The surface of the object before and after the plasma treatment was evaluated by metal crystal structure inspection, gas release characteristics, and contact angle measurement.
【0018】図2はプラズマ処理の前の被処理物の断面
図であり、図3はプラズマ処理の後の被処理物の断面図
である。図2から明らかな如く、物理的処理後プラズマ
処理前の被処理物の金属組織には、その表面近傍に針状
のマルテンサイト組織が認められるが、図3から明らか
な如く、プラズマ処理前後の被処理物の金属組織には、
マルテンサイト組織は認められず、オーステナイト組織
に変態していた。FIG. 2 is a cross-sectional view of the processing target before the plasma processing, and FIG. 3 is a cross-sectional view of the processing target after the plasma processing. As is clear from FIG. 2, the metal structure of the object to be treated after the physical treatment and before the plasma treatment has a needle-like martensite structure near the surface thereof, but as is clear from FIG. The metal structure of the workpiece
No martensite structure was observed, and the structure was transformed to austenite structure.
【0019】表1はガス放出特性の測定結果を示すもの
である。ガス放出特性は、加熱装置を備えるチャンバ内
でプラズマ処理前又は処理後の被処理物を加熱し、該チ
ャンバに露点が−120℃の窒素ガスを流入し、チャン
バから流出された窒素ガスの露点を測定し、水分量に換
算することによって評価した。Table 1 shows the measurement results of the gas release characteristics. The gas release characteristics are such that an object to be processed before or after plasma processing is heated in a chamber provided with a heating device, nitrogen gas having a dew point of -120 ° C flows into the chamber, and the dew point of the nitrogen gas discharged from the chamber. Was measured and evaluated by converting to water content.
【0020】[0020]
【表1】 [Table 1]
【0021】表1から明らかな如く、プラズマ処理後は
処理前に比べて水分が大幅に低減されている。As is evident from Table 1, the water content is significantly reduced after the plasma treatment as compared to before the treatment.
【0022】表2はプラズマ処理前後の被処理物に水滴
をそれぞれ滴下し、その水滴の接触角を測定した結果を
示すものである。表2から明らかな如く、プラズマ処理
後は処理前に比べて水滴の接触角が大幅に低減されてお
り、プラズマ処理によって被処理物表面の有機物は単分
子膜程度まで除去されているものと考えられる。Table 2 shows the results obtained by dropping water droplets on the object before and after the plasma treatment, and measuring the contact angle of the water droplets. As is evident from Table 2, the contact angle of the water droplet is significantly reduced after the plasma treatment compared to before the treatment, and it is considered that the organic matter on the surface of the object to be treated is removed to a monomolecular film level by the plasma treatment. Can be
【0023】[0023]
【表2】 [Table 2]
【0024】なお、本実施例にあっては被処理物として
半導体の成膜工程で使用するマスクについて説明してい
るが、本発明はこれに限らず、真空チャンバ又は排気系
部品等,減圧下で使用される金属製部品等の表面処理に
特に好適であり、また常圧下で使用される金属製部品等
の表面処理にも好適であることはいうまでもない。In this embodiment, the mask used in the process of forming a semiconductor as an object to be processed is described. However, the present invention is not limited to this. It is needless to say that it is particularly suitable for the surface treatment of metal parts and the like used in the above, and also suitable for the surface treatment of metal parts and the like used under normal pressure.
【0025】[0025]
【発明の効果】以上詳述した如く、本発明に係る表面処
理方法にあっては、シールドガス雰囲気中で温度を18
00℃〜2000℃に制御されたプラズマジェットを放
射することによって、被処理物の表面に残留する有機物
及び水分を除去し、また軟化焼きなまし効果によって機
械的研磨及び/又はブラスト処理等の物理的な処理によ
って被処理物の表面に生じた機械加工変質層を元の組織
に変態させるため、被処理物の品質が低下することなく
被処理物の表面が洗浄・再生され、被処理物の減圧下で
の使用にあたって、減圧の立ち上がりが速い。また、シ
ールドガスのガスカーテンを利用することによって、プ
ラズマ処理は常圧で行うことが可能であり、これによっ
て被処理物のサイズに拘らず表面処理を行うことがで
き、サイズが大きい被処理物であっても低コストで表面
処理を行うことができる等、本発明は優れた効果を奏す
る。As described above in detail, in the surface treatment method according to the present invention , the temperature is set to 18 in a shielding gas atmosphere.
Release plasma jet controlled at 00 ° C to 2000 ° C
By morphism, to remove organic matter and moisture remaining on the surface of the object to be treated, also machine by softening annealing effect
Because the mechanically damaged layer generated on the surface of the workpiece by the mechanical processing such as mechanical polishing and / or blasting is transformed into the original structure, the quality of the workpiece can be reduced without deteriorating the quality of the workpiece. The surface is cleaned and regenerated, and when the object to be processed is used under reduced pressure, the rise of the reduced pressure is fast. In addition, by using the gas curtain of the shielding gas, the plasma processing can be performed at normal pressure, so that the surface processing can be performed regardless of the size of the processing object, and the processing object having a large size can be performed. Even in this case, the present invention has excellent effects such as surface treatment can be performed at low cost.
【図1】本発明に係る表面処理方法の実施態様を示す側
断面図である。FIG. 1 is a side sectional view showing an embodiment of a surface treatment method according to the present invention.
【図2】プラズマ処理の前の被処理物の断面図である。FIG. 2 is a cross-sectional view of an object to be processed before plasma processing.
【図3】プラズマ処理の後の被処理物の断面図である。FIG. 3 is a cross-sectional view of an object to be processed after plasma processing.
1 ヘッド 2 外ノズル 6 内ノズル 10 電極 15 直流電源 S 被処理物 DESCRIPTION OF SYMBOLS 1 Head 2 Outer nozzle 6 Inner nozzle 10 Electrode 15 DC power supply S Workpiece
Claims (1)
であって、 前記被処理物の表面を機械研磨及び/又はブラスト処理
する工程と、被処理物の表面に、その周囲にシールドガ
スによるガスカーテンを形成しつつ、温度を1800℃
〜2000℃に制御したプラズマジェットを放射する工
程とを含むことを特徴とする表面処理方法。1. A method for treating a surface of a metal object to be processed, comprising: mechanically polishing and / or blasting the surface of the object ;
Temperature of 1800 ° C while forming a gas curtain
Irradiating a plasma jet controlled to 20002000 ° C.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7154741A JP2920605B2 (en) | 1995-06-21 | 1995-06-21 | Surface treatment method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7154741A JP2920605B2 (en) | 1995-06-21 | 1995-06-21 | Surface treatment method |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH093625A JPH093625A (en) | 1997-01-07 |
JP2920605B2 true JP2920605B2 (en) | 1999-07-19 |
Family
ID=15590912
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP7154741A Expired - Fee Related JP2920605B2 (en) | 1995-06-21 | 1995-06-21 | Surface treatment method |
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JP (1) | JP2920605B2 (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4662453B2 (en) * | 2005-04-19 | 2011-03-30 | 株式会社イー・スクエア | Substrate drying method and apparatus |
KR102363344B1 (en) * | 2019-07-05 | 2022-02-14 | 세메스 주식회사 | Plasma torch and system for treating component of semiconductor manufacturing equipment with the plasma torch |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01294875A (en) * | 1988-05-20 | 1989-11-28 | Hitake Seiko Kk | Surface treatment for resin film and the like |
-
1995
- 1995-06-21 JP JP7154741A patent/JP2920605B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
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JPH093625A (en) | 1997-01-07 |
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