JP2901259B2 - Evaporation jig and method for manufacturing semiconductor device - Google Patents
Evaporation jig and method for manufacturing semiconductor deviceInfo
- Publication number
- JP2901259B2 JP2901259B2 JP63327939A JP32793988A JP2901259B2 JP 2901259 B2 JP2901259 B2 JP 2901259B2 JP 63327939 A JP63327939 A JP 63327939A JP 32793988 A JP32793988 A JP 32793988A JP 2901259 B2 JP2901259 B2 JP 2901259B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor wafer
- permanent magnet
- metal mask
- semiconductor device
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Landscapes
- Physical Vapour Deposition (AREA)
Description
【発明の詳細な説明】 〔概要〕 半導体ウエハ上にはんだバンプを真空蒸着で形成する
際に用いるメタルマスクと半導体ウエハとを支持するた
めの蒸着治具に関し、 半導体ウエハ上のはんだが蒸着中に溶融することを防
止することを目的とし、 外周をホルダで支持された永久磁石により半導体ウエ
ハを挟んで軟質磁性体のメタルマスクを吸着し、該半導
体ウエハをメタルマスクと共に支持するように蒸着治具
において、上記ホルダ及び半導体ウエハと永久磁石との
間に銅板を挿入配置するように構成する。DETAILED DESCRIPTION OF THE INVENTION [Summary] The present invention relates to a metal mask used for forming solder bumps on a semiconductor wafer by vacuum evaporation and an evaporation jig for supporting the semiconductor wafer. A vapor deposition jig for preventing a melting, adsorbing a soft magnetic metal mask with a semiconductor wafer sandwiched between semiconductor wafers by a permanent magnet supported by a holder on the outer periphery, and supporting the semiconductor wafer together with the metal mask. , A copper plate is inserted and arranged between the permanent magnet and the semiconductor wafer.
本発明は半導体ウエハ上にはんだバンプを真空蒸着で
形成する際に用いるメタルマスクと半導体ウエハとを支
持するための蒸着治具及びそれを用いた半導体装置の製
造方法に関する。The present invention relates to an evaporation jig for supporting a semiconductor mask and a metal mask used for forming solder bumps on a semiconductor wafer by vacuum evaporation, and a method of manufacturing a semiconductor device using the same.
近年、半導体素子の配線基板上への実装方法は、より
高密度実装が可能な方向へと向かっている。その方法の
一つとして、フリップチップ実装法がある。この方法
は、半導体素子上の信号入出力部に直接はんだを盛り、
配線基板上の相対するパターンと突き合わせてはんだ付
けする。このため、半導体素子上には、予めはんだバン
プを形成しておく必要がある。はんだバンプの形成には
蒸着による方法があり、この場合メタルマスクを使用す
るが、真空蒸着チャンバー内に第３図に示すような複数
のチップ1aを形成した半導体ウエハ１をセットする際、
単にメタルマスクと半導体ウエハを重ね合わせただけで
は、第４図に示すように半導体ウエハ１とメタルマスク
２との間に隙間が生じ、はんだバンプ３以外の不必要な
部分にまでまわり込み、絶縁不良となることがある。In recent years, a method of mounting a semiconductor element on a wiring board has been moving toward a direction where higher density mounting is possible. One of the methods is a flip chip mounting method. In this method, solder is applied directly to the signal input / output part on the semiconductor element,
Solder it against the opposing pattern on the wiring board. Therefore, it is necessary to form solder bumps on the semiconductor element in advance. There is a method by vapor deposition for forming the solder bumps. In this case, a metal mask is used. When the semiconductor wafer 1 on which a plurality of chips 1a are formed as shown in FIG.
If the metal mask and the semiconductor wafer are simply overlapped, a gap is created between the semiconductor wafer 1 and the metal mask 2 as shown in FIG. It may be defective.
このため従来は第５図に示すように、ホルダ４に支持
された支持された永久磁石５に半導体ウエハ１を挟んで
軟質磁性体のメタルマスク２を吸着させ半導体ウエハ１
を支持するようにした蒸着治具を用いている。Conventionally, as shown in FIG. 5, a soft magnetic metal mask 2 is attracted to a permanent magnet 5 supported by a holder 4 with a semiconductor wafer 1 interposed therebetween.
Is used.
上記従来の蒸着治具では、半導体ウエハ１がシリコン
の場合は問題ないが、ガリウムヒ素の場合は熱伝導が悪
いため、蒸着による発熱のためウエハ上のはんだが溶融
してしまうという問題が生ずる。In the above-described conventional vapor deposition jig, there is no problem when the semiconductor wafer 1 is silicon, but in the case of gallium arsenide, there is a problem that the heat on the wafer is melted due to heat generated by vapor deposition due to poor heat conduction.
本発明は上記従来の問題点に鑑み、半導体ウエハ上の
はんだが蒸着中に溶融することがないようにした蒸着治
具及びそれを用いた半導体装置の製造方法を提供するこ
とを目的とする。The present invention has been made in view of the above-described conventional problems, and has as its object to provide a deposition jig that prevents solder on a semiconductor wafer from being melted during deposition and a method of manufacturing a semiconductor device using the same.
上記目的を達成するために、本発明の蒸着治具は、外
周をホルダ（４）と支持された永久磁石５により半導体
ウエハ１を挟んで軟質磁性体のメタルマスク２を吸着
し、該半導体ウエハ１をメタルマスク２と共に支持し
て、該半導体ウエハ１のメタルマスク２覆われない表面
にバンプを蒸着する蒸着治具において、上記半導体ウエ
ハ１と永久磁石５との間に銅板６を挿入配置したことを
特徴とする。In order to achieve the above object, a vapor deposition jig of the present invention adsorbs a soft magnetic metal mask 2 across a semiconductor wafer 1 by a permanent magnet 5 supported on the outer periphery by a holder (4). 1 is supported together with the metal mask 2, and a copper plate 6 is inserted between the semiconductor wafer 1 and the permanent magnet 5 in a vapor deposition jig for vapor-depositing bumps on the surface of the semiconductor wafer 1 that is not covered with the metal mask 2. It is characterized by the following.
また、本発明の半導体装置の製造方法は、半導体ウエ
ハ１の背面に永久磁石５を配置してかつ該半導体ウエハ
１の表面にメタルマスク２を密着させ、該メタルマスク
２表面の開口パターンを通して、該半導体ウエハ１の表
面に選択的にバンプを蒸着する半導体装置の製造方法で
あって、前記半導体ウエハ１と前記永久磁石５との間に
銅板６を挿入配置したことを特徴とする。In the method of manufacturing a semiconductor device according to the present invention, the permanent magnet 5 is arranged on the back surface of the semiconductor wafer 1 and the metal mask 2 is brought into close contact with the surface of the semiconductor wafer 1. A method of manufacturing a semiconductor device in which bumps are selectively deposited on a surface of the semiconductor wafer 1, wherein a copper plate 6 is inserted between the semiconductor wafer 1 and the permanent magnet 5.
ホルダ４及び半導体ウエハ１と永久磁石５との間に胴
体６を挿入配置したことにより、はんだ蒸着時に半導体
ウエハ１に発生する熱を銅板６を介してホルダ４に逃す
ことができ、はんだの溶融を防止することができる。Since the body 6 is inserted and arranged between the holder 4 and the semiconductor wafer 1 and the permanent magnet 5, heat generated in the semiconductor wafer 1 at the time of solder deposition can be released to the holder 4 via the copper plate 6, and the solder can be melted. Can be prevented.
第１図は本発明の蒸着治具の実施例を示す断面図であ
る。FIG. 1 is a sectional view showing an embodiment of the vapor deposition jig of the present invention.
本実施例の蒸着治具は、第１図に示すように円板状の
永久磁石５が円板状の銅板６と共にその外周をホルダ４
に支持されており、該ホルダ４と銅板６とは接触してい
る。In the vapor deposition jig of this embodiment, as shown in FIG. 1, a disk-shaped permanent magnet 5 and a disk-shaped copper plate 6
, And the holder 4 and the copper plate 6 are in contact with each other.
このように構成された本実施例の蒸着治具を用いた本
発明の半導体装置の製造方法は、第１図に示すように銅
板６の下面に円板状の半導体ウエハ１を挟んで円形薄板
状のメタルマスク２を永久磁石５により吸着しウエハ１
を支持し、該メタルマスク２の表面の開口パターン（図
示省略）を通して半導体ウエハ１の表面に選択的にバン
プを蒸着するものである。The method of manufacturing a semiconductor device according to the present invention using the vapor deposition jig of the present embodiment having the above-described configuration includes a circular thin plate having a disc-shaped semiconductor wafer 1 sandwiched on the lower surface of a copper plate 6 as shown in FIG. The metal mask 2 is attracted by the permanent magnet 5 and the wafer 1
And bumps are selectively deposited on the surface of the semiconductor wafer 1 through an opening pattern (not shown) on the surface of the metal mask 2.
このように構成された本実施例の半導体装置の製造方
法は、半導体ウエハ１にはんだバンプを蒸着するとき
に、半導体ウエハ１に発生した熱は、第２図に白ぬき矢
印で示すように半導体ウエハ１から銅板６内に伝わり、
その外周からホルダ４に放熱される。この放熱により半
導体ウエハ１の温度上昇を抑えることができ、さらには
んだバンプの溶融を防止することができる。In the method of manufacturing a semiconductor device according to the present embodiment having the above-described configuration, when the solder bumps are deposited on the semiconductor wafer 1, the heat generated in the semiconductor wafer 1 is reduced as shown by a white arrow in FIG. Transmitted from the wafer 1 into the copper plate 6,
Heat is radiated to the holder 4 from the outer periphery. Due to this heat radiation, the temperature rise of the semiconductor wafer 1 can be suppressed, and the melting of the solder bumps can be prevented.
以上説明した様に、本発明によれは、蒸着治具のメタ
ルマスクを吸着して半導体ウエハを支持する永久磁石
と、該永久磁石の外周を支持するホルダとの間に銅板を
挿入配置することにより、はんだバンプ蒸着時の半導体
ウエハの温度上昇を抑えることができ、蒸着されたはん
だバンプの溶融を防止することが可能となる。As described above, according to the present invention, a copper plate is inserted and arranged between a permanent magnet that supports a semiconductor wafer by adsorbing a metal mask of a vapor deposition jig and a holder that supports an outer periphery of the permanent magnet. Thereby, the temperature rise of the semiconductor wafer at the time of solder bump deposition can be suppressed, and the deposited solder bumps can be prevented from melting.
第１図は本発明の実施例の示す図、 第２図は本発明の実施例の作用を説明する図、 第３図は従来の半導体ウエハを示す図、 第４図は従来技術の問題点を説明するための図、 第５図は従来の蒸着治具を示す図である。 図において、 １は半導体ウエハ、２はメタルマスク、４はホルダ、５
は永久磁石、６は銅板 を示す。1 is a diagram showing an embodiment of the present invention, FIG. 2 is a diagram for explaining the operation of the embodiment of the present invention, FIG. 3 is a diagram showing a conventional semiconductor wafer, and FIG. FIG. 5 is a view showing a conventional vapor deposition jig. In the figure, 1 is a semiconductor wafer, 2 is a metal mask, 4 is a holder, 5
Denotes a permanent magnet, and 6 denotes a copper plate.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 柄澤 一明 神奈川県川崎市中原区上小田中1015番地 富士通株式会社内 (72)発明者 岡本 茂樹 神奈川県川崎市中原区上小田中1015番地 富士通株式会社内 (56)参考文献 特開 昭57−126967（ＪＰ，Ａ) 特開 昭58−126978（ＪＰ，Ａ) ──────────────────────────────────────────────────続 き Continuing from the front page (72) Inventor Kazuaki Karasawa 1015 Uedanaka, Nakahara-ku, Kawasaki-shi, Kanagawa Prefecture Inside Fujitsu Limited (72) Inventor Shigeki Okamoto 1015 Kamiodanaka, Nakahara-ku, Kawasaki-shi, Kanagawa Fujitsu Limited (56) References JP-A-57-126967 (JP, A) JP-A-58-126978 (JP, A)
Claims (2)
（５）により半導体ウエハ（１）を挟んで軟質磁性体の
メタルマスク（２）を吸着し、該半導体ウエハ（１）を
メタルマスク（２）と共に支持して、該半導体ウエハ
（１）のメタルマスク（２）で覆われない表面にバンプ
を蒸着する蒸着治具において、 上記半導体ウエハ（１）と永久磁石（５）との間に銅板
（６）を挿入配置したことを特徴とする蒸着治具。1. A soft magnetic metal mask (2) is attracted by a permanent magnet (5) whose outer periphery is supported by a holder (4) across a semiconductor wafer (1), and the semiconductor wafer (1) is metallized. A vapor deposition jig supporting the mask together with the mask and depositing bumps on a surface of the semiconductor wafer not covered with the metal mask, wherein the semiconductor wafer and the permanent magnet are separated. An evaporating jig characterized in that a copper plate (6) is inserted between the jigs.
（５）を配置してかつ該半導体ウエハ（１）の表面にメ
タルマスク（２）を密着させ、該メタルマスク（２）表
面の開口パターンを通して、該半導体ウエハ（１）の表
面に選択的にバンプを蒸着する半導体装置の製造方法で
あって、 前記半導体ウエハ（１）を前記永久磁石（５）との間に
銅板（６）を挿入配置したことを特徴とする半導体装置
の製造方法。2. A permanent magnet (5) is arranged on the back surface of the semiconductor wafer (1), and a metal mask (2) is brought into close contact with the surface of the semiconductor wafer (1), and an opening on the surface of the metal mask (2) is provided. A method for manufacturing a semiconductor device, wherein bumps are selectively deposited on a surface of a semiconductor wafer (1) through a pattern, wherein a copper plate (6) is placed between the semiconductor wafer (1) and the permanent magnet (5). A method for manufacturing a semiconductor device, wherein the semiconductor device is inserted and arranged.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63327939A JP2901259B2 (en) | 1988-12-27 | 1988-12-27 | Evaporation jig and method for manufacturing semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63327939A JP2901259B2 (en) | 1988-12-27 | 1988-12-27 | Evaporation jig and method for manufacturing semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02175856A JPH02175856A (en) | 1990-07-09 |
| JP2901259B2 true JP2901259B2 (en) | 1999-06-07 |
Family
ID=18204699
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63327939A Expired - Lifetime JP2901259B2 (en) | 1988-12-27 | 1988-12-27 | Evaporation jig and method for manufacturing semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2901259B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7729680B2 (en) | 2004-11-02 | 2010-06-01 | Panasonic Corporation | Noise suppresser |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007119895A (en) * | 2005-10-31 | 2007-05-17 | Toshiba Matsushita Display Technology Co Ltd | Vapor deposition device |
| KR100696554B1 (en) * | 2005-12-16 | 2007-03-19 | 삼성에스디아이 주식회사 | Deposition apparatus |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57126967A (en) * | 1981-01-29 | 1982-08-06 | Fujitsu Ltd | Method for holding mask for film formation |
| JPS58126978A (en) * | 1982-01-22 | 1983-07-28 | Hitachi Ltd | Base plate holding device |
-
1988
- 1988-12-27 JP JP63327939A patent/JP2901259B2/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7729680B2 (en) | 2004-11-02 | 2010-06-01 | Panasonic Corporation | Noise suppresser |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH02175856A (en) | 1990-07-09 |
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