JP2897486B2 - Positive thermistor element - Google Patents
Positive thermistor elementInfo
- Publication number
- JP2897486B2 JP2897486B2 JP26631391A JP26631391A JP2897486B2 JP 2897486 B2 JP2897486 B2 JP 2897486B2 JP 26631391 A JP26631391 A JP 26631391A JP 26631391 A JP26631391 A JP 26631391A JP 2897486 B2 JP2897486 B2 JP 2897486B2
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- electrodes
- ptc element
- ptc
- gap region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C1/00—Details
- H01C1/14—Terminals or tapping points or electrodes specially adapted for resistors; Arrangements of terminals or tapping points or electrodes on resistors
- H01C1/1406—Terminals or electrodes formed on resistive elements having positive temperature coefficient
Description
【０００１】[0001]
【産業上の利用分野】本発明は、正特性サーミスタ素子
に関し、特に、正特性サーミスタ素体の両主面に形成さ
れた電極が改良された正特性サーミスタ素子に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a positive temperature coefficient thermistor element, and more particularly to a positive temperature coefficient thermistor element having improved electrodes formed on both main surfaces of a positive temperature coefficient thermistor body.
【０００２】[0002]
【従来の技術】従来、チタン酸バリウム系半導体磁器の
両主面に電極を形成してなる正特性サーミスタ素子（以
下、ＰＴＣ素子）が公知である。ＰＴＣ素子では、ＰＴ
Ｃ素体が半導体磁器よりなるため、使用する電極材料と
しては、半導体磁器との間に障壁を形成しない導電性材
料を用いる必要がある。そこで、ＰＴＣ素体の両主面の
全面にＮｉを無電解めっきし、Ｎｉ電極を形成した後、
該Ｎｉ電極上にＡｇペーストを焼き付けることによりＡ
ｇ電極を形成した構造が提案されている。しかしなが
ら、高温で使用されるＰＴＣ素子では、両主面のＡｇ電
極がサーマルマイグレーションを起こし、両主面のＡｇ
電極間で短絡を引き起こすという問題があった。2. Description of the Related Art Conventionally, a positive temperature coefficient thermistor element (hereinafter, PTC element) in which electrodes are formed on both main surfaces of a barium titanate-based semiconductor ceramic has been known. For PTC elements, PT
Since the C element is made of semiconductor porcelain, it is necessary to use a conductive material that does not form a barrier between the C element and the semiconductor porcelain. Therefore, Ni is electrolessly plated on the entire surfaces of both main surfaces of the PTC body to form a Ni electrode.
By baking Ag paste on the Ni electrode, A
A structure in which a g electrode is formed has been proposed. However, in a PTC element used at a high temperature, the Ag electrodes on both main surfaces cause thermal migration, and the Ag electrodes on both main surfaces
There is a problem that a short circuit occurs between the electrodes.
【０００３】上記電極間マイグレーションを防止するも
のとして、図４に示すＰＴＣ素子が提案されている。図
４（ａ），（ｂ）に示すＰＴＣ素子１では、チタン酸バ
リウム系半導体磁器よりなるＰＴＣ素体２の両主面の全
面にＮｉを無電解めっきすることによりＮｉ電極３ａ，
３ｂが形成されている。このＮｉ電極３ａ，３ｂ上に、
周囲にギャップ領域ｇを残してＮｉ電極３ａ，３ｂより
も径の小さなＡｇ電極４ａ，４ｂが形成されている。す
なわち、ギャップ領域ｇを設けることにより、両主面の
Ａｇ電極４ａ，４ｂ間のＰＴＣ素体２の側面を経由した
マイグレーションが生じ難くされている。A PTC element shown in FIG. 4 has been proposed to prevent the above-mentioned migration between electrodes. In the PTC element 1 shown in FIGS. 4A and 4B, Ni is electrolessly plated on the entire surfaces of both main surfaces of the PTC body 2 made of barium titanate-based semiconductor porcelain, so that the Ni electrode 3a
3b is formed. On these Ni electrodes 3a and 3b,
Ag electrodes 4a and 4b smaller in diameter than the Ni electrodes 3a and 3b are formed around the gap region g. That is, by providing the gap region g, migration via the side surface of the PTC element body 2 between the Ag electrodes 4a and 4b on both main surfaces is less likely to occur.
【０００４】[0004]
【発明が解決しようとする課題】しかしながら、図５に
部分拡大断面図で示すように、ギャップ領域ｇでは、Ｎ
ｉ電極３ａのみが存在するが、Ｎｉは比抵抗が比較的高
いため、該ギャップ領域ｇに存在するＮｉ電極部分が抵
抗膜として機能する。その結果、ＰＴＣ素子１に電圧を
印加した場合、ＰＴＣ素体２内に図６に示す電流分布
（なお、電流分布を示す図の縦軸Ｉは電流強度を示
す。）が生じていた。そのため、ＰＴＣ素体２内が不均
一に発熱し、図６に示すように、ＰＴＣ素体２内に温度
分布（温度分布を示す図の縦軸のＴは温度を示す。）が
生じていた。よって、上記のような温度分布が生じてい
る状態において、ＰＴＣ素子にパルス電圧が数回印加さ
れると、ギャップ領域ｇにストレスが溜まり、甚だしき
場合にはＰＴＣ素子が割れることがあった。However, as shown in a partially enlarged sectional view of FIG.
Although only the i-electrode 3a exists, Ni has a relatively high specific resistance, so the Ni electrode portion existing in the gap region g functions as a resistive film. As a result, when a voltage was applied to the PTC element 1, the current distribution shown in FIG. 6 (the vertical axis I in the figure showing the current distribution indicates the current intensity) occurred in the PTC element body 2. For this reason, the inside of the PTC body 2 generates heat non-uniformly, and as shown in FIG. 6, a temperature distribution occurs in the PTC body 2 (T on the vertical axis in the figure showing the temperature distribution indicates the temperature). . Therefore, when a pulse voltage is applied to the PTC element several times in a state where the temperature distribution as described above occurs, stress accumulates in the gap region g, and in some cases, the PTC element is broken.
【０００５】よって、本発明の目的は、マイグレーショ
ンによる両主面の電極間の短絡が生じ難く、かつパルス
電圧が印加された場合にもＰＴＣ素体の割れが生じ難い
ＰＴＣ素子を提供することにある。Accordingly, an object of the present invention is to provide a PTC element in which a short circuit between electrodes on both main surfaces due to migration hardly occurs and a PTC element hardly cracks even when a pulse voltage is applied. is there.
【０００６】[0006]
【課題を解決するための手段】本発明は、上記課題を達
成するためになされたものであり、正特性サーミスタ素
体の両主面の全面にニッケルよりなる第１の電極を形成
し、周囲に所定幅のギャップ領域を残して上記第１の電
極上に銀を主体とする第２の電極を形成してなるＰＴＣ
素子において、少なくとも上記ギャップ領域を覆うよう
に、アルミニウム４８〜９６重量％及びケイ素４〜５２
重量％を含有するＡｌ−Ｓｉ電極が第１の電極上に形成
されていることを特徴とするＰＴＣ素子である。上記Ａ
ｌ−Ｓｉ電極の組成において、アルミニウム及びケイ素
含有量を上記の割合に限定したのは、Ａｌが４８重量％
未満及びＳｉが５２重量％を超えると、耐湿特性が劣化
するからであり、Ａｌが９６重量％を超え、Ｓｉが４重
量％未満の場合にも、同じく耐湿特性が劣化するからで
ある。SUMMARY OF THE INVENTION The present invention has been made to achieve the above object, and comprises forming a first electrode made of nickel over the entire surface of both main surfaces of a positive temperature coefficient thermistor body, and forming a first electrode made of nickel. PTC formed by forming a second electrode mainly composed of silver on the first electrode while leaving a gap region of a predetermined width
In the device, 48 to 96% by weight of aluminum and 4 to 52% of silicon are formed so as to cover at least the gap region.
A PTC element characterized in that an Al-Si electrode containing 1% by weight is formed on a first electrode. A above
In the composition of the l-Si electrode, the aluminum and silicon contents were limited to the above proportions because the Al content was 48% by weight.
When the content is less than 52% and Si exceeds 52% by weight, the moisture resistance deteriorates. When the content of Al exceeds 96% by weight and the content of Si is less than 4% by weight, the moisture resistance also deteriorates.
【０００７】アルミニウム及びケイ素を上記特定の割合
で含有する電極材料は、本願出願人が先に提出した特願
平２−３４０８６０号に開示されており、アルミニウム
粉末及びケイ素粉末に低融点ガラスフリット及び有機ビ
ヒクルを加えてペーストとし、該ペーストを塗布し、焼
き付けることにより電極として完成される。アルミニウ
ム粉末として、例えば、粒径が５〜３０μｍ程度の粉末
が、また、ケイ素粉末として、例えば粒径が０．５〜１
０．０μｍ程度の粉末が用いられる。また、低融点ガラ
スフリット及び有機ビヒクルの混合割合は、特に限定は
されないが、一例を挙げると、上記アルミニウム粉末及
びケイ素粉末を合計で７０重量％に対し、低融点ガラス
フリット１０重量％及び有機ビヒクル２０重量％の割合
で調合することができる。[0007] An electrode material containing aluminum and silicon at the above-mentioned specific ratios is disclosed in Japanese Patent Application No. 2-340860 previously filed by the present applicant, and a low melting glass frit and aluminum frit are added to aluminum powder and silicon powder. An organic vehicle is added to form a paste, and the paste is applied and baked to complete the electrode. As aluminum powder, for example, a powder having a particle size of about 5 to 30 μm, and as silicon powder, for example, a particle having a particle size of 0.5 to 1 μm
A powder of about 0.0 μm is used. The mixing ratio of the low melting point glass frit and the organic vehicle is not particularly limited, but, for example, for example, 10% by weight of the low melting point glass frit and the organic vehicle with respect to 70% by weight of the aluminum powder and silicon powder in total. It can be prepared in a proportion of 20% by weight.
【０００８】[0008]
【作用】本発明では、ニッケルよりなる第１の電極上に
周囲にギャップ領域を残してＡｇを主体とする第２の電
極が形成されており、かつ該ギャップ領域を覆うように
上記特定の割合でアルミニウム及びケイ素を含有するＡ
ｌ−Ｓｉ電極が形成された構造を有するため、両主面の
電極間におけるマイグレーションが生じ難い。また、ギ
ャップ領域において、ニッケルよりなる第１の電極上に
上記Ａｌ−Ｓｉ電極が重ねられているため、ギャップ領
域に存在する電極膜の抵抗が低められており、従って使
用状態においてＰＴＣ素体内に温度分布が生じ難い。よ
って、高温で使用した場合であっても、ＰＴＣ素体の割
れが生じ難い。According to the present invention, the second electrode mainly composed of Ag is formed on the first electrode made of nickel while leaving a gap region around the first electrode, and the specific ratio is set so as to cover the gap region. A containing aluminum and silicon
Since it has a structure in which an l-Si electrode is formed, migration between the electrodes on both main surfaces hardly occurs. Further, in the gap region, since the Al-Si electrode is superimposed on the first electrode made of nickel, the resistance of the electrode film existing in the gap region is reduced. Temperature distribution is unlikely to occur. Therefore, even when used at a high temperature, cracking of the PTC body is unlikely to occur.
【０００９】[0009]
【実施例】以下、本発明の非限定的な実施例を説明する
ことにより、本発明を明らかにする。図１は、本発明の
一実施例にかかるＰＴＣ素子の断面図であり、図２は平
面図である。本実施例のＰＴＣ素子１１は、円板状のＰ
ＴＣ素体１２を用いて構成されている。ＰＴＣ素体１２
は、例えばチタン酸バリウム系材料のような半導体磁器
材料よりなる。ＰＴＣ素体１２の両主面の全面には、ニ
ッケルを無電解めっきすることにより、第１の電極１３
ａ，１３ｂが形成されている。そして、第１の電極１３
ａ，１３ｂ上には、周囲に所定幅のギャップ領域ｇを残
してＡｇペーストを塗布・焼き付けることによりＡｇを
主体とする第２の電極１４ａ，１４ｂが形成されてい
る。ここまでは、図４に示した従来のＰＴＣ素子１と同
様である。The present invention will be clarified below by describing non-limiting examples of the present invention. FIG. 1 is a sectional view of a PTC element according to one embodiment of the present invention, and FIG. 2 is a plan view. The PTC element 11 of the present embodiment has a disc-shaped PTC element.
It is configured using the TC element 12. PTC body 12
Is made of a semiconductor porcelain material such as a barium titanate-based material. The entire surface of both main surfaces of the PTC element body 12 is electrolessly plated with nickel to form the first electrode 13.
a, 13b are formed. Then, the first electrode 13
The second electrodes 14a, 14b mainly composed of Ag are formed on the a, 13b by applying and baking an Ag paste while leaving a gap region g of a predetermined width around the periphery. Up to this point, it is the same as the conventional PTC element 1 shown in FIG.
【００１０】本実施例のＰＴＣ素子１１の特徴は、上記
ギャップ領域ｇ上において、Ｎｉよりなる第１の電極１
３ａ，１３ｂを覆うように、Ａｌ−Ｓｉ電極１５ａ，１
５ｂが形成されていることにある。Ａｌ−Ｓｉ電極は、
アルミニウム４８〜９６重量％及びケイ素４〜５２重量
％をこの割合で含有するペーストを塗布し、焼き付ける
ことにより形成される。本実施例のＰＴＣ素子１１で
は、Ａｇよりなる第２の電極１４ａ，１４ｂの周囲にギ
ャップ領域ｇが形成されているため、並びにギャップ領
域ｇ上に上記Ａｌ−Ｓｉ電極が形成されているため、Ａ
ｇを主体とする第２の電極１４ａ，１４ｂ間のマイグレ
ーションが確実に防止される。A feature of the PTC element 11 of this embodiment is that the first electrode 1 made of Ni is formed on the gap region g.
Al-Si electrodes 15a, 1b are provided so as to cover 3a, 13b.
5b is formed. The Al-Si electrode is
The paste is formed by applying and baking a paste containing 48 to 96% by weight of aluminum and 4 to 52% by weight of silicon in this ratio. In the PTC element 11 of this embodiment, the gap region g is formed around the second electrodes 14a and 14b made of Ag, and the Al-Si electrode is formed on the gap region g. A
Migration between the second electrodes 14a and 14b mainly composed of g is reliably prevented.
【００１１】なお、図１及び図２から明らかなように、
本実施例では、Ａｌ−Ｓｉ電極１５ａ，１５ｂの内側端
縁が第２の電極１４ａ，１４ｂ上に至るように、Ａｌ−
Ｓｉ電極１５ａ，１５ｂが形成されており、Ａｇを主体
とする第２の電極１４ａ，１４ｂの外周縁が隠されてい
る。従って、第２の電極１４ａ，１４ｂ間のマイグレー
ションの発生がより確実に防止されるが、Ａｌ−Ｓｉ電
極１５ａ，１５ｂの内側端縁は、第２の電極１４ａ，１
４ｂの外周端縁に当接されていてもよい。のみならず、
ギャップ領域ｇにおいては、Ｎｉよりなる第１の電極１
３ａ，１３ｂ上に上記Ａｌ−Ｓｉ電極１５ａ，１５ｂが
存在するため、ギャップ領域ｇにおける電極抵抗が低め
られている。従って、使用状態では、図３に示すよう
に、電流分布がＰＴＣ素体１２の全領域に渡り均一とな
り、またＰＴＣ素体１２内における温度分布も図３に示
した従来例の場合に比べて偏っていないことがわかる。
よって、高温下で使用された場合にパルス電圧が印加さ
れたとしても、ＰＴＣ素体１２の割れが生じ難い。Incidentally, as is apparent from FIGS. 1 and 2,
In the present embodiment, the Al-Si electrodes 15a and 15b are formed such that the inner edges thereof reach the second electrodes 14a and 14b.
Si electrodes 15a and 15b are formed, and the outer edges of the second electrodes 14a and 14b mainly composed of Ag are hidden. Therefore, the occurrence of migration between the second electrodes 14a and 14b is more reliably prevented, but the inner edges of the Al-Si electrodes 15a and 15b are connected to the second electrodes 14a and 1b.
4b may be in contact with the outer peripheral edge. As well,
In the gap region g, the first electrode 1 made of Ni
Since the Al-Si electrodes 15a and 15b exist on 3a and 13b, the electrode resistance in the gap region g is reduced. Accordingly, in the use state, as shown in FIG. 3, the current distribution becomes uniform over the entire area of the PTC body 12, and the temperature distribution in the PTC body 12 is also different from that of the conventional example shown in FIG. It can be seen that there is no bias.
Therefore, even if a pulse voltage is applied when used at a high temperature, cracking of the PTC element body 12 hardly occurs.
【００１２】次に、具体的な実験結果につき説明する。
実施例のＰＴＣ素子１１として、チタン酸バリウム系半
導体磁器よりなり、直径１４ｍｍ×厚み２．３ｍｍのＰ
ＴＣ素体１２を用意した。このＰＴＣ素体１２の両主面
間の抵抗は１５Ωであった。次に、上記ＰＴＣ素体１２
の両主面に、膜厚１．５μｍの第１の電極１３ａ，１３
ｂを、Ｎｉを無電解めっきすることにより形成した。さ
らに、第１の電極１３ａ，１３ｂ上に、Ａｇ粉末を含有
する導電ペーストをスクリーン印刷し、周囲に幅１．５
ｍｍのギャップ領域ｇを残して、膜厚４μｍの第２の電
極１４ａ，１４ｂを形成した。さらに、上記ギャップ領
域ｇ上のＮｉよりなる第１の電極１３ａ，１３ｂ上に、
Ａｌ７２重量％及びＳｉ２８重量％の割合でＡｌ及びＳ
ｉを含有する金属粉末含有導電ペーストを塗布し、焼き
付けることにより、膜厚１０μｍのＡｌ−Ｓｉ電極１５
ａ，１５ｂを形成し、ＰＴＣ素子１１を得た。Next, specific experimental results will be described.
The PTC element 11 of the embodiment is made of a barium titanate-based semiconductor porcelain having a diameter of 14 mm and a thickness of 2.3 mm.
A TC body 12 was prepared. The resistance between the two main surfaces of the PTC body 12 was 15Ω. Next, the PTC body 12
The first electrodes 13a and 13 having a thickness of 1.5 μm
b was formed by electroless plating Ni. Further, a conductive paste containing Ag powder is screen-printed on the first electrodes 13a and 13b, and the width of the conductive paste is 1.5
The second electrodes 14a and 14b having a film thickness of 4 μm were formed while leaving a gap region g of mm. Further, on the first electrodes 13a and 13b made of Ni on the gap region g,
Al and S at a ratio of 72% by weight of Al and 28% by weight of Si
A conductive paste containing metal powder containing i is applied and baked to form an Al-Si electrode 15 having a film thickness of 10 μm.
a, 15b were formed, and a PTC element 11 was obtained.
【００１３】比較のために、上記Ａｌ−Ｓｉ電極が形成
されていないＰＴＣ素子（図４に示した従来例）を用意
した。上記実施例及び従来例のＰＴＣ素子に、２００Ｖ
及び５秒のパルス電圧を１００回印加したところ、従来
例のＰＴＣ素子では２０個あたり１５個の素子でＰＴＣ
素体に割れが生じた。これに対して、本実施例のＰＴＣ
素子では、外観上の異常は全く認められなかった。ま
た、本実施例のＰＴＣ素子において、上記パルス電圧を
印加した際のマイグレーションの発生の有無を目視によ
り調べたところ、電極間マイグレーションの発生は全く
認められなかった。なお、図示の実施例では、ＰＴＣ素
子１１は、円板状のＰＴＣ素体１２を用いて構成されて
いたが、矩形板状等の他の形状のＰＴＣ素体を用いたＰ
ＴＣ素子にも本発明を適用することができる。For comparison, a PTC element without the Al-Si electrode was prepared (the conventional example shown in FIG. 4). 200V is applied to the PTC element of the above embodiment and the conventional example.
And when a pulse voltage of 5 seconds is applied 100 times, the PTC element of the conventional example has 15 PTC elements per 20 elements.
The element cracked. In contrast, the PTC of the present embodiment
No abnormalities in appearance were observed in the device. In addition, in the PTC element of this example, when the presence or absence of migration when applying the pulse voltage was visually examined, no occurrence of migration between electrodes was observed. In the illustrated embodiment, the PTC element 11 is configured using the disc-shaped PTC element body 12, but the PTC element 11 using the PTC element body having another shape such as a rectangular plate shape is used.
The present invention can be applied to a TC element.
【００１４】[0014]
【発明の効果】以上のように、本発明では、Ｎｉよりな
る第１の電極上に、周囲にギャップ領域を残してＡｇを
主体とする第２の電極が形成されており、かつギャップ
領域において第１の電極を覆うようにＡｌ−Ｓｉ電極が
形成されているため、両主面のＡｇを主体とする第２の
電極間のマイグレーションが生じ難い。よって、Ａｇ電
極のマイグレーションに起因する短絡が生じ難い。のみ
ならず、ギャップ領域においては、Ｎｉよりなる第１の
電極を覆うようにＡｌ−Ｓｉ電極が形成されているた
め、ギャップ領域部分の電極抵抗が低められている。従
って、高温下で使用した場合であっても、ＰＴＣ素体の
ほぼ全体に渡り温度が均一化されるため、パルス電圧が
印加されたとしてもＰＴＣ素体の割れが生じ難い。よっ
て、本発明により、電極間マイグレーションによる短絡
事故が生じ難く、ＰＴＣ素体の割れの生じ難い、信頼性
に優れたＰＴＣ素子を提供することが可能となる。As described above, according to the present invention, the second electrode mainly composed of Ag is formed on the first electrode made of Ni while leaving the gap region around the first electrode. Since the Al-Si electrode is formed so as to cover the first electrode, migration between the second electrodes mainly composed of Ag on both main surfaces hardly occurs. Therefore, a short circuit due to the migration of the Ag electrode hardly occurs. In addition, in the gap region, the Al-Si electrode is formed so as to cover the first electrode made of Ni, so that the electrode resistance in the gap region is reduced. Therefore, even when used at a high temperature, the temperature is made uniform over substantially the entire PTC body, so that even if a pulse voltage is applied, the PTC body is unlikely to crack. Therefore, according to the present invention, it is possible to provide a highly reliable PTC element in which a short circuit accident due to migration between electrodes is less likely to occur, a PTC element is less likely to crack, and the reliability is excellent.
【図１】本発明の一実施例のＰＴＣ素子を示す断面図。FIG. 1 is a sectional view showing a PTC element according to one embodiment of the present invention.
【図２】実施例のＰＴＣ素子の平面図。FIG. 2 is a plan view of the PTC element of the embodiment.
【図３】実施例のＰＴＣ素子における電流分布及び温度
分布を説明するための図。FIG. 3 is a diagram for explaining current distribution and temperature distribution in the PTC element of the example.
【図４】（ａ）及び（ｂ）は、従来のＰＴＣ素子を説明
するための斜視図及び側面図。4A and 4B are a perspective view and a side view for explaining a conventional PTC element.
【図５】従来のＰＴＣ素子の問題点を説明するための部
分拡大断面図。FIG. 5 is a partially enlarged sectional view for explaining a problem of the conventional PTC element.
【図６】従来のＰＴＣ素子のＰＴＣ素体内の電流分布及
び温度分布を説明するための図。FIG. 6 is a diagram for explaining current distribution and temperature distribution in a PTC element body of a conventional PTC element.
１１…ＰＴＣ素子 １２…ＰＴＣ素体 １３ａ，１３ｂ…第１の電極 １４ａ，１４ｂ…第２の電極 １５ａ，１５ｂ…Ａｌ−Ｓｉ電極 11 PTC element 12 PTC body 13a, 13b First electrode 14a, 14b Second electrode 15a, 15b Al-Si electrode
Claims (1)
ニッケルよりなる第１の電極を形成し、周囲に所定幅の
ギャップ領域を残して前記第１の電極上に銀を主体とす
る第２の電極を形成してなる正特性サーミスタ素子にお
いて、 少なくとも前記ギャップ領域を覆うように、アルミニウ
ム４８〜９６重量％及びケイ素４〜５２重量％を含有す
るＡｌ−Ｓｉ電極が第１の電極上に形成されていること
を特徴とする、正特性サーミスタ素子。1. A first electrode made of nickel is formed on the entire surface of both main surfaces of a positive temperature coefficient thermistor body, and silver is mainly formed on the first electrode while leaving a gap region of a predetermined width around the first electrode. In a positive temperature coefficient thermistor element formed with a second electrode, an Al-Si electrode containing 48 to 96% by weight of aluminum and 4 to 52% by weight of silicon is formed on the first electrode so as to cover at least the gap region. A positive temperature coefficient thermistor element, characterized in that the element is formed as follows.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26631391A JP2897486B2 (en) | 1991-10-15 | 1991-10-15 | Positive thermistor element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26631391A JP2897486B2 (en) | 1991-10-15 | 1991-10-15 | Positive thermistor element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH05109503A JPH05109503A (en) | 1993-04-30 |
| JP2897486B2 true JP2897486B2 (en) | 1999-05-31 |
Family
ID=17429194
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP26631391A Expired - Fee Related JP2897486B2 (en) | 1991-10-15 | 1991-10-15 | Positive thermistor element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2897486B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0749132A4 (en) * | 1994-03-04 | 1997-05-14 | Komatsu Mfg Co Ltd | Positive temperature coefficient thermistor and thermistor device using it |
| JP3058097B2 (en) * | 1996-10-09 | 2000-07-04 | 株式会社村田製作所 | Thermistor chip and manufacturing method thereof |
-
1991
- 1991-10-15 JP JP26631391A patent/JP2897486B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH05109503A (en) | 1993-04-30 |
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