JP2893967B2 - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JP2893967B2 JP2893967B2 JP3003141A JP314191A JP2893967B2 JP 2893967 B2 JP2893967 B2 JP 2893967B2 JP 3003141 A JP3003141 A JP 3003141A JP 314191 A JP314191 A JP 314191A JP 2893967 B2 JP2893967 B2 JP 2893967B2
- Authority
- JP
- Japan
- Prior art keywords
- chip
- metal film
- semiconductor device
- bump
- infrared rays
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Landscapes
- Light Receiving Elements (AREA)
- Solid State Image Pick-Up Elements (AREA)
Description
【０００１】[0001]
【産業上の利用分野】本発明は半導体装置に係り、特に
光検知素子と該検知素子で得られた信号を処理する信号
処理素子とを組み合わせたハイブリッド型の半導体装置
に関する。赤外線を検知する半導体装置として、赤外線
の波長に高感度を有するエネルギーバンドギャップの狭
い水銀・カドミウム・テルル（Hg1-x Cdx Te）のような
化合物半導体基板に光検知素子を形成し、該光検知素子
で得られた信号を処理する電荷転送装置のような信号処
理素子を、シリコン（Si）基板に形成し、これらの素子
間をインジウム（In）の金属バンプを用いてバンプ接続
したハイブリッド型の半導体装置が知られている。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device, and more particularly to a hybrid type semiconductor device in which a light detecting element and a signal processing element for processing a signal obtained by the detecting element are combined. As a semiconductor device for detecting infrared radiation, the light sensing element formed on a compound semiconductor substrate such as a narrow mercury cadmium telluride energy band gap (Hg 1-x Cd x Te ) with high sensitivity to infrared wavelengths, the A hybrid in which a signal processing element such as a charge transfer device that processes a signal obtained by a light detection element is formed on a silicon (Si) substrate, and these elements are bump-connected using an indium (In) metal bump. Semiconductor devices of the type are known.
【０００２】[0002]
【従来の技術】従来の半導体装置に付いて述べると図４
に示すように、赤外ダイオードアレイのような光検知素
子を形成した化合物半導体チップ１と、該検知素子の信
号を処理する電荷転送素子を形成したSiチップ２とをIn
のバンプ３で接続して半導体装置４を形成する。そして
この半導体装置４を形成したSiチップ２をサファイア基
板よりなるマウント台５に接着剤６で貼着し、このSiチ
ップ２に形成した引き出し電極７と電極取り出し部８と
をワイヤボンディングして接続している。2. Description of the Related Art A conventional semiconductor device will be described with reference to FIG.
As shown in FIG. 1, a compound semiconductor chip 1 on which a light detecting element such as an infrared diode array is formed and a Si chip 2 on which a charge transfer element for processing signals of the detecting element are formed
To form a semiconductor device 4. Then, the Si chip 2 on which the semiconductor device 4 is formed is adhered to a mount base 5 made of a sapphire substrate with an adhesive 6, and the lead electrode 7 formed on the Si chip 2 and the electrode take-out portion 8 are connected by wire bonding. doing.
【０００３】[0003]
【発明が解決しようとする課題】ところで、このような
Siチップ２に設ける電荷転送素子は、接地電極を設ける
必要があり、該チップの表面に接地電極を形成していた
が、この表面より接地電極を採った場合、Siチップの比
抵抗が高いために確実に接地できず、該半導体装置で得
られた赤外画像にはノイズが発生して、高解像度の赤外
画像が得られない問題があった。By the way, such a problem is solved.
The charge transfer element provided on the Si chip 2 needs to be provided with a ground electrode, and the ground electrode is formed on the surface of the chip. However, when the ground electrode is taken from this surface, the specific resistance of the Si chip is high. In this case, noise cannot be obtained in the infrared image obtained by the semiconductor device, and a high-resolution infrared image cannot be obtained.
【０００４】そのため、Siチップ２を接地するために、
該チップのバンプの形成側に対して反対側の裏面側の全
面に、該Siチップと同一の伝導型の不純物原子を高濃度
に拡散して〜1020/cm3程度の濃度となるようにし、比抵
抗を低下させる方法を採っていた。しかし、この方法で
有ると、その不純物を高濃度に拡散したために、Siチッ
プと化合物半導体チップ間をバンプで接続する際の位置
合わせ用の赤外線が、該Siチップを透過しない問題を生
じる。Therefore, in order to ground the Si chip 2,
Impurity atoms of the same conductivity type as the Si chip are diffused in a high concentration over the entire back surface opposite to the bump formation side of the chip so as to have a concentration of about 10 20 / cm 3. And a method of lowering the specific resistance. However, according to this method, since the impurities are diffused at a high concentration, a problem arises in that infrared rays for positioning when connecting the Si chip and the compound semiconductor chip with bumps do not pass through the Si chip.
【０００５】つまり、信号処理素子を形成したSiチップ
２と光検知素子を形成した化合物半導体チップ１とをIn
のバンプ３でバンプ接続する際に、位置合わせが必要で
あるが、この位置合わせをする際に赤外線を照射してそ
の透過光を用いているため、Siチップ２に高濃度に不純
物原子を拡散すると、その高濃度拡散層に赤外線が透過
しない問題がある。That is, the Si chip 2 on which the signal processing element is formed and the compound semiconductor chip 1 on which the light detecting element is formed are
When bumps are connected with the bumps 3, alignment is required. However, since the alignment is performed by irradiating infrared rays and using the transmitted light, impurity atoms are diffused into the Si chip 2 at a high concentration. Then, there is a problem that infrared rays do not pass through the high concentration diffusion layer.
【０００６】本発明は上記した問題点を解決し、光検知
素子を形成した化合物半導体チップと電荷転送素子を形
成したSiチップとをバンプ接合する際の、位置合わせ用
の赤外線の透過を妨げないような半導体装置の提供を目
的とする。The present invention solves the above-mentioned problems, and does not hinder the transmission of infrared rays for positioning when a compound semiconductor chip on which a photodetecting element is formed and a Si chip on which a charge transfer element is formed are bump-bonded. It is intended to provide such a semiconductor device.
【０００７】[0007]
【課題を解決するための手段】本発明の半導体装置は光
検知素子を形成した化合物半導体チップと、該検知素子
の信号を処理する信号処理素子を形成した半導体チップ
とをバンプで接続して成る装置に於いて、前記信号処理
素子を形成する半導体チップの裏面に該チップの接地用
の金属膜を設け、該金属膜にバンプ接続する際の位置合
わせ用赤外線が透過する透過窓を設けたことを特徴とす
る。また前記透過窓が金属膜に開口された円形窓、或い
は格子状に形成した金属膜で囲まれた方形の窓で有るこ
とを特徴とするものである。A semiconductor device according to the present invention comprises a compound semiconductor chip on which a light detecting element is formed and a semiconductor chip on which a signal processing element for processing a signal of the detecting element is connected by bumps. In the device, a metal film for grounding the chip is provided on the back surface of the semiconductor chip on which the signal processing element is formed, and a transmission window through which infrared rays for positioning when the bump connection is made to the metal film is provided. It is characterized by. The transmission window may be a circular window opened in a metal film or a square window surrounded by a metal film formed in a lattice.
【０００８】[0008]
【作用】本発明の半導体装置は、電荷転送素子を形成し
たSiチップの裏面側に、前記バンプ接続するための位置
合わせ用の赤外線が透過するための透過窓を予め設けて
接地用の金属膜を形成する。このようにすると前記金属
膜よりSiチップの接地が確実に採れ、またバンプ接続の
ための位置合わせ用の赤外線の透過を妨げず、位置合わ
せが確実に行い得る。According to the semiconductor device of the present invention, a transmission window for transmitting infrared rays for positioning for bump connection is provided in advance on the back side of the Si chip on which the charge transfer element is formed, and a metal film for grounding is provided. To form In this way, the grounding of the Si chip is ensured from the metal film, and transmission of infrared rays for positioning for bump connection is not hindered, and positioning can be performed reliably.
【０００９】[0009]
【実施例】以下、図面を用いて本発明の実施例につき詳
細に説明する。図１は本発明の半導体装置の断面図、図
２(a) および図２(b) は本発明の装置に用いる金属膜の
パターンを示す平面図である。図１に示すように本発明
の装置は、該装置を構成する電荷転送素子を形成したSi
チップ２の裏面側には、円形、或いは方形の透過窓11を
有する金- 錫(Au-Sn) 合金、或いは金- アンチモン(Sb)
合金より成る接地用の金属膜12が形成されている。そし
てこの透過窓11を介してSiチップ２の裏面側より赤外線
を透過し、この透過光で赤外線カメラに赤外画像を形成
し、その画像で光検知素子を形成したHg 1-x Cdx Teの化
合物半導体チップ１とSiチップ２とをInのバンプ３で接
続している。BRIEF DESCRIPTION OF THE DRAWINGS FIG.
This will be described in detail. FIG. 1 is a sectional view and a view of a semiconductor device according to the present invention.
2 (a) and FIG. 2 (b) show the metal film used in the apparatus of the present invention.
It is a top view showing a pattern. The present invention as shown in FIG.
The device is a device in which a charge transfer element constituting the device is formed by Si.
On the back side of the chip 2, a circular or square transmission window 11 is provided.
Gold-tin (Au-Sn) alloy or gold-antimony (Sb)
A ground metal film 12 made of an alloy is formed. Soshi
Infrared rays from the back side of the Si chip 2 through the leverage transmission window 11
And transmit an infrared image to the infrared camera using this transmitted light.
Hg 1-xCdxTe conversion
Combined semiconductor chip 1 and Si chip 2 are connected by In bump 3
Has continued.
【００１０】この金属膜12は図２(a) に示すように赤外
線が透過する円形の透過窓11を形成しても良く、或いは
図２(b) に示すように方形の透過窓11を形成するために
金属膜12を格子状に形成しても良い。このような本発明
の半導体装置を製造する場合、図３(a) に示すように電
荷転送素子を形成するSiチップ２の所定位置にホトリソ
グラフィを用いて所定のパターンのレジスト膜13を形成
する。The metal film 12 may form a circular transmission window 11 through which infrared rays pass as shown in FIG. 2 (a), or may form a rectangular transmission window 11 as shown in FIG. 2 (b). For this purpose, the metal film 12 may be formed in a lattice shape. When manufacturing such a semiconductor device of the present invention, a resist film 13 having a predetermined pattern is formed by photolithography at a predetermined position of a Si chip 2 on which a charge transfer element is to be formed, as shown in FIG. .
【００１１】次いで図３(b) に示すように、該レジスト
膜をマスクとして該チップ上に金- 錫(Au-Sn) 合金、或
いは金- アンチモン(Au-Sb) 合金より成る金属膜12を蒸
着により形成する。次いで図３(c) に示すように、前記
レジスト膜をレジスト膜除去剤で除去するとともに、そ
の上の金属膜をもいわゆるリフトオフ法により除去して
前記赤外線の透過窓11を有する金属膜12を設けたSiチッ
プ２を形成する。Next, as shown in FIG. 3B, a metal film 12 made of a gold-tin (Au-Sn) alloy or a gold-antimony (Au-Sb) alloy is formed on the chip using the resist film as a mask. It is formed by vapor deposition. Next, as shown in FIG. 3 (c), the resist film is removed with a resist film remover, and the metal film thereon is also removed by a so-called lift-off method to remove the metal film 12 having the infrared ray transmission window 11. The provided Si chip 2 is formed.
【００１２】次いでこのSiチップ２の裏面側より赤外線
を照射して、その赤外画像を赤外カメラで映写しなが
ら、Siチップと化合物半導体チップを結合するバンプの
位置を位置合わせしてバンプ接続して半導体装置を形成
する。Next, infrared rays are irradiated from the back side of the Si chip 2 and the infrared image is projected by an infrared camera, and the bumps connecting the Si chip and the compound semiconductor chip are aligned and bump connection is performed. Thus, a semiconductor device is formed.
【００１３】[0013]
【発明の効果】以上述べたように、本発明によれば、電
荷転送素子を形成したSiチップの接地が確実に採れ、か
つバンプ接続する際の赤外線の透過を妨げない高品質の
半導体装置が得られる効果がある。As described above, according to the present invention, there is provided a high-quality semiconductor device in which the ground of the Si chip on which the charge transfer element is formed can be reliably taken and the transmission of infrared rays at the time of bump connection is not hindered. There is an effect that can be obtained.
【図１】 本発明の半導体装置の断面図である。FIG. 1 is a cross-sectional view of a semiconductor device of the present invention.
【図２】 本発明の装置に用いる金属膜のパターン図で
ある。図で(a) は第１実施例図で、(b) は第２実施例図
である。FIG. 2 is a pattern diagram of a metal film used in the apparatus of the present invention. (A) is a diagram of the first embodiment, and (b) is a diagram of the second embodiment.
【図３】 本発明の金属膜パターンの形成工程図であ
る。FIG. 3 is a process chart of forming a metal film pattern according to the present invention.
【図４】 従来の半導体装置を示す模式図である。FIG. 4 is a schematic diagram showing a conventional semiconductor device.
1 化合物半導体チップ 2 Siチップ 3 バンプ 4 半導体装置 11 透過窓 12 金属膜 13 レジスト膜 1 Compound semiconductor chip 2 Si chip 3 Bump 4 Semiconductor device 11 Transmission window 12 Metal film 13 Resist film
───────────────────────────────────────────────────── フロントページの続き (72)発明者 伊藤 雄一郎 神奈川県川崎市中原区上小田中1015番地 富士通株式会社内 (56)参考文献 特開 昭58−128762（ＪＰ，Ａ) 特開 平１−287972（ＪＰ，Ａ) 特開 平１−216290（ＪＰ，Ａ) 特開 昭59−47774（ＪＰ，Ａ) 特開 平２−206179（ＪＰ，Ａ) (58)調査した分野(Int.Cl.6，ＤＢ名) H01L 31/02 ────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Yuichiro Ito 1015 Kamikodanaka, Nakahara-ku, Kawasaki-shi, Kanagawa Prefecture Inside Fujitsu Limited (56) References JP-A-58-128762 (JP, A) JP-A-1-287972 (JP, a) JP flat 1-216290 (JP, a) JP Akira 59-47774 (JP, a) JP flat 2-206179 (JP, a) (58 ) investigated the field (Int.Cl. 6 , DB name) H01L 31/02
Claims (2)
プ(1) と、該検知素子の信号を処理する信号処理素子を
形成した半導体チップ(2) とをバンプ(3) で接続して成
る装置に於いて、前記信号処理素子を形成する半導体チ
ップ(2) の裏面に該チップの接地用金属膜(12)を設け、
該金属膜にバンプ(3) 接続する際の位置合わせ用赤外線
が透過する透過窓(11)を設けたことを特徴とする半導体
装置。An apparatus comprising a compound semiconductor chip (1) on which a light detecting element is formed and a semiconductor chip (2) on which a signal processing element for processing a signal of the detecting element is connected by a bump (3). In the above, a ground metal film (12) of the semiconductor chip (2) for forming the signal processing element is provided on the back surface of the chip,
A semiconductor device comprising a transmission window (11) through which infrared rays for positioning when connecting a bump (3) are connected to the metal film.
た円形窓、或いは格子状に形成した金属膜(12)で囲まれ
た方形の窓で有ることを特徴とする請求項１記載の半導
体装置。2. The transmission window (11) is a circular window opened in a metal film (12) or a rectangular window surrounded by a metal film (12) formed in a lattice shape. Item 2. The semiconductor device according to item 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3003141A JP2893967B2 (en) | 1991-01-16 | 1991-01-16 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3003141A JP2893967B2 (en) | 1991-01-16 | 1991-01-16 | Semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04241470A JPH04241470A (en) | 1992-08-28 |
| JP2893967B2 true JP2893967B2 (en) | 1999-05-24 |
Family
ID=11549078
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3003141A Expired - Lifetime JP2893967B2 (en) | 1991-01-16 | 1991-01-16 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2893967B2 (en) |
-
1991
- 1991-01-16 JP JP3003141A patent/JP2893967B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH04241470A (en) | 1992-08-28 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP3540325B2 (en) | Contact formation on semiconductor substrate for radiation detectors and imaging devices | |
| US8338219B2 (en) | Multiplexed output two terminal photodiode array for imaging applications and related fabrication process | |
| US6429036B1 (en) | Backside illumination of CMOS image sensor | |
| JPH09152486A (en) | Image pick-up device | |
| JPH027417B2 (en) | ||
| JP2004273848A (en) | Photodiode array, its manufacturing method, and radiation detector | |
| US4197633A (en) | Hybrid mosaic IR/CCD focal plane | |
| US4286278A (en) | Hybrid mosaic IR/CCD focal plane | |
| TWI809124B (en) | Back-illuminated sensor and a method of manufacturing a sensor | |
| US4206470A (en) | Thin film interconnect for multicolor IR/CCD | |
| US4196508A (en) | Durable insulating protective layer for hybrid CCD/mosaic IR detector array | |
| WO2004082023A1 (en) | Photodiode array, method for manufacturing same, and radiation detector | |
| CN100438080C (en) | Formation of contacts on semiconductor substrates | |
| WO2004047178A1 (en) | Backside-illuminated photodiode array, method for manufacturing same, and semiconductor device | |
| WO1998057376A1 (en) | Interconnection technique for hybrid integrated devices | |
| JP2893967B2 (en) | Semiconductor device | |
| US4364973A (en) | Method for fabricating a solid-state imaging device using photoconductive film | |
| US5846850A (en) | Double sided interdiffusion process and structure for a double layer heterojunction focal plane array | |
| JP3114759B2 (en) | Semiconductor device | |
| JPH0637291A (en) | Infrared detector and manufacture thereof | |
| JPS59112652A (en) | Semiconductor image pickup device | |
| TWI258210B (en) | Method for wafer level package of sensor chip | |
| JPH05315582A (en) | Infrared detector | |
| JPH06177414A (en) | Semiconductor element | |
| JP3360928B2 (en) | Method for manufacturing solid-state imaging device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 19990202 |